CN109250749A - The production method of zinc sulphide - Google Patents
The production method of zinc sulphide Download PDFInfo
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- CN109250749A CN109250749A CN201710572957.7A CN201710572957A CN109250749A CN 109250749 A CN109250749 A CN 109250749A CN 201710572957 A CN201710572957 A CN 201710572957A CN 109250749 A CN109250749 A CN 109250749A
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- zinc
- zinc sulphide
- production method
- cvd furnace
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/08—Sulfides
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of production method of zinc sulphide, which includes placing zinc raw material in the crucible built in cvd furnace, vacuumizing, heat up, depositing, cooling down, coming out of the stove.The production method of zinc sulphide of the present invention, because gathering dust in time, the defects of obtained zinc sulphide does not generate mist spot, mist layer, decorative pattern, and the integral thickness deviation for vulcanizing zinc product is small, conversion rate of products is high.
Description
Technical field
The present invention relates to the preparation field of zinc sulphide more particularly to a kind of production methods of zinc sulphide.
Background technique
The prior art relevant to this case can refer to CN100387525C, which uses the spray different from prior art
Mouth, settling chamber and discharging box structure efficiently solve current chemical vapor deposition system in conjunction with the process route for being applicable in the equipment
The thickness uniformity and optical quality homogeneity question in standby vulcanization zinc technology；High-efficiency filtration systems effectively can prevent zinc powder from entering
Mechanical pump ensure that the progress of deposition for a long time.In the equipment of the invention, it can be prepared in the settling chamber of 400mm wide at present
The zinc sulphide window of 350 × 15mm of Φ, device structure, technological parameter and the technical process of the invention can be completely applied to advise greatly
In the production of mould CVD ZnS material.However, since depositing system is bigger in above-mentioned zinc sulphide production process, sulphur produced
Changing zinc will appear in uneven thickness, influence the utilization rate of product, gather dust in process of production can generate not in time mist spot, mist layer,
Decorative pattern etc. influences the optical property of product.On the basis of the technique, it can make further to adjust to obtain better vulcanization
The production method of zinc.
Summary of the invention
The purpose of the present invention is to provide a kind of production methods of highly efficient zinc sulphide.
To realize foregoing purpose, the present invention adopts the following technical scheme: a kind of production method of zinc sulphide, the production method
Including placing zinc raw material in the crucible built in cvd furnace, vacuumizing, heat up, deposit, cool down, come out of the stove；
The process of the heating are as follows: be warming up to 700-800 DEG C；Protective gas is passed through in temperature-rise period, the flow of protective gas is
2-60L/min；
The detailed process of the deposition are as follows: 700-800 DEG C of heat preservation deposition, sedimentation time are set according to the weight of filled zinc raw material
It is fixed；It is passed through protective gas in deposition process and hydrogen sulfide enters in cvd furnace, the volume ratio of protective gas and hydrogen sulfide is 15:
1-40:1, the protective gas being passed through take zinc fume out of, and zinc fume enters mutually reciprocal with hydrogen sulfide behind the settling chamber of cvd furnace
Zinc sulphide should be generated；Carry the protective gas of zinc fume and the molar ratio of zinc fume are as follows: 50:1-18:1 is controlled in reaction process
The molar ratio of zinc fume and hydrogen sulfide processed is 0.85:1-1:1.5；
The process of the cooling are as follows: room temperature is down to by depositing temperature.
As a further improvement of the present invention, in heating and deposition process, pressure control is in 5000- in cvd furnace
In 12000Pa.
As a further improvement of the present invention, it is warming up to 700-800 DEG C of detailed process are as follows: risen in 4-8h by room temperature
300-500℃；Then 4-8h is kept the temperature；Continue 8-20h later and is warming up to 700-800 DEG C.
As a further improvement of the present invention, the detailed process of room temperature is down to by depositing temperature are as follows: 8-10h is by depositing temperature
It is down to 600-500 DEG C；20-40h is down to 300-200 DEG C by 600-500 DEG C later；Last 30-50h is down to room by 300-200 DEG C
Temperature.
As a further improvement of the present invention, the detailed process come out of the stove are as follows: be filled with cvd furnace using protective gas and carry out gas
Body displacement, comes out of the stove after being replaced, obtains zinc sulphide.
As a further improvement of the present invention, described vacuumize needs that absolute vacuum degree < 10Pa will be evacuated in cvd furnace,
Until Pressure Rise Rate < 5Pa/h.
As a further improvement of the present invention, the protective gas is nitrogen or inert gas.
As a further improvement of the present invention, the deposition rate of zinc sulphide is controlled in 12 μm/min of 0.2-.
As a further improvement of the present invention, the production method is gone back before placing zinc raw material in the crucible built in cvd furnace
Including a vacuum leak hunting step.
As a further improvement of the present invention, the vacuum leak hunting step needs that absolute vacuum degree < will be evacuated in cvd furnace
Until 5Pa, Pressure Rise Rate < 3Pa/h.
The production method of zinc sulphide of the present invention, because gathering dust in time, obtained zinc sulphide does not generate mist spot, mist layer, decorative pattern
The defects of, and the integral thickness deviation for vulcanizing zinc product is small, conversion rate of products is high.
Detailed description of the invention
Fig. 1 is the overall structure diagram of depositing system used by the embodiment of the production method of zinc sulphide of the present invention.
Specific embodiment
Technical solution is clearly and completely described below in conjunction with the embodiment of the present invention, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
Referring to Fig. 1, the present invention is produced using depositing system 100, which includes sequentially connected heavy
Product furnace 110, dust arrester installation 120, vacuum evacuation device 130 and exhaust gas processing device 140, cvd furnace 110 also with an electrical control
Device 150 is electrically connected, and a feeder 160 is supplied to cvd furnace 110, a crucible 111 built in cvd furnace 110.
The production method of zinc sulphide of the present invention is produced using above-mentioned depositing system 100, and it is heavy which is included in
Zinc raw material is placed in crucible built in product furnace 110, cvd furnace 110 vacuumizes, the heating of cvd furnace 110, deposit, cvd furnace 110 drops
Temperature is come out of the stove.
110 temperature-rise period of cvd furnace are as follows: cvd furnace 110 is warming up to 700-800 under the control of electrical control gear 150
℃；Protective gas is passed through in temperature-rise period into cvd furnace 110, guarantees that 150 inert environments of cvd furnace, the flow of protective gas are
2-60L/min。
The detailed process of deposition are as follows: 700-800 DEG C of heat preservation deposition, sedimentation time are set according to the weight of filled zinc raw material
It is fixed；It is passed through protective gas in deposition process and hydrogen sulfide enters in cvd furnace, the volume ratio of protective gas and hydrogen sulfide is 15:
1-40:1, the protective gas being passed through take zinc fume out of, and zinc fume enters mutually reciprocal with hydrogen sulfide behind the settling chamber of cvd furnace
Zinc sulphide should be generated, zinc sulphide is deposited with certain rate；Carry the protective gas of zinc fume and the molar ratio of zinc fume are as follows:
50:1-18:1, the molar ratio that zinc fume and hydrogen sulfide are controlled in reaction process is 0.85:1-1:1.5.
The temperature-fall period of cvd furnace 110 are as follows: cvd furnace 110 is dropped under the control of electrical control gear 150 by depositing temperature
To room temperature.
In certain embodiments of the present invention, in heating and deposition process, pressure control is in 5000- in cvd furnace 110
In 12000Pa.
In certain embodiments of the present invention, it is warming up to 700-800 DEG C of detailed process are as follows: risen in 4-8h by room temperature
300-500℃；Then 4-8h is kept the temperature；Continue 8-20h later and is warming up to 700-800 DEG C.
In certain embodiments of the present invention, the detailed process of room temperature is down to by depositing temperature are as follows: 8-10h is by depositing temperature
It is down to 600-500 DEG C；20-40h is down to 300-200 DEG C by 600-500 DEG C later；Last 30-50h is down to room by 300-200 DEG C
Temperature.
In certain embodiments of the present invention, the detailed process come out of the stove are as follows: be filled with cvd furnace 110 using protective gas and carry out
Gas displacement comes out of the stove after being replaced, obtains zinc sulphide.
In certain embodiments of the present invention, the protective gas is nitrogen or inert gas.
In certain embodiments of the present invention, the deposition rate of zinc sulphide is controlled in 12 μm/min of 0.2-.
In certain embodiments of the present invention, it vacuumizes and needs to be evacuated to absolute vacuum degree < 10Pa in cvd furnace 110, press
Until rising rate < 5Pa/h.
In certain embodiments of the present invention, vacuum leak hunting step needs that absolute vacuum degree < 5Pa will be evacuated in cvd furnace,
Until Pressure Rise Rate < 3Pa/h.
In certain embodiments of the present invention, further include before production method places zinc raw material in the crucible built in cvd furnace
One vacuum leak hunting step.
In certain embodiments of the present invention, vacuum leak hunting step needs that absolute vacuum degree < 5Pa will be evacuated in cvd furnace,
Until Pressure Rise Rate < 3Pa/h.
Embodiment 1.
By cvd furnace sky furnace and ultimate vacuum is taken out to 4Pa/h, carries out empty furnace leak detection, Pressure Rise Rate 2.3Pa/h, leak detection is closed
Lattice are packed into 200Kg zinc raw material, while installing graphite deposits system, are taken out again using vacuum evacuation device to entire depositing system true
Sky leak detection takes out ultimate vacuum to 8Pa, Pressure Rise Rate 3.7Pa/h, and after the assay was approved, setting temperature program heats up, and heats up: benefit
Temperature program is set with electrical control gear, temperature program is to rise to 300 DEG C from room temperature first, heating-up time 4h, then 300
DEG C heat preservation 8h, be warming up to 700 DEG C later, heating-up time 16h；It is passed through argon gas in temperature-rise period, guarantees inert environments in cvd furnace,
The flow of argon gas is 2L/min, is 5000Pa using the pressure in vacuum evacuation device control cvd furnace；When reaching depositing temperature 700
DEG C when, be passed through argon gas+hydrogen sulfide and enter inside cvd furnace, the volume ratio of argon gas and hydrogen sulfide is 15:1, is passed through argon gas entrance
Inside to crucible, argon gas carries zinc fume to the settling chamber of cvd furnace, carries the argon gas of zinc fume and the molar ratio of zinc fume
The molar ratio that zinc fume and hydrogen sulfide are controlled for 18:1, in reaction process is 0.85:1, chemical vapor deposition in deposition process
The pressure control of furnace is cooled down after depositing 80h using program in 5000Pa, the deposition rate control of zinc sulphide in 0.2 μm/min,
600 DEG C are down to by 700 DEG C first, temperature fall time 8h；Then 300 DEG C are down to by 600 DEG C, temperature fall time 20h；Later by 300 DEG C
It is down to room temperature, temperature fall time 30h；Cvd furnace is cooled to room temperature, and is filled with cvd furnace using argon gas and is carried out gas displacement, is replaced
After come out of the stove, obtain vulcanization zinc product；It is detected, the integral thickness deviation for vulcanizing zinc product is less than 1.5mm, and rate of product transformation reaches
75.8%。
Embodiment 2.
By cvd furnace sky furnace and ultimate vacuum is taken out to 4.8Pa/h, carries out empty furnace leak detection, Pressure Rise Rate 2.9Pa/h, leak detection is closed
Lattice are packed into 300Kg zinc raw material, while installing graphite deposits system, are taken out again using vacuum evacuation device to entire depositing system true
Sky leak detection takes out ultimate vacuum to 9Pa, Pressure Rise Rate 4.2Pa/h, and qualified, setting temperature program heats up, and is filled using electrical control
Install temperature program, temperature program are as follows: 350 DEG C, heating-up time 5h are risen to by room temperature, in 350 DEG C of heat preservation 6h, then by 350
DEG C 760 DEG C are risen to, heating-up time 14h；Argon gas is passed through in temperature-rise period, the flow of argon gas is 18L/min, utilizes vacuum evacuation device
Controlling the pressure in cvd furnace is 7000Pa；When reaching 760 DEG C of depositing temperature, it is passed through argon gas+hydrogen sulfide and enters cvd furnace
The volume ratio of the inside, argon gas and hydrogen sulfide is 25:1, is passed through argon gas and enters inside crucible, and argon gas carries zinc fume to cvd furnace
Settling chamber；The molar ratio of the argon gas and zinc fume that carry zinc fume is 30:1, control zinc fume and vulcanization in reaction process
The molar ratio of hydrogen is 0.9:1, and the pressure control of cvd furnace exists in 7000Pa, the deposition rate control of zinc sulphide in deposition process
5 μm/min, after depositing 120h, cooled down using program, by 700 DEG C near 550 DEG C, temperature fall time 10h；Then it is down to by 550 DEG C
250 DEG C, temperature fall time 30h；Room temperature, temperature fall time 35h are down to by 250 DEG C later；Cvd furnace is cooled to room temperature, and is filled using argon gas
Enter cvd furnace and carry out gas displacement, come out of the stove after being replaced, obtains vulcanization zinc product；It is detected, obtained vulcanization zinc product is whole
Body thickness deviation is less than 1.5mm, and conversion rate of products reaches 77.3%.
Embodiment 3.
By cvd furnace sky furnace and ultimate vacuum is taken out to 5Pa/h, carries out empty furnace leak detection, Pressure Rise Rate 3.0Pa/h, leak detection is closed
Lattice are packed into 350Kg zinc raw material, while installing graphite deposits system, are taken out again using vacuum evacuation device to entire depositing system true
Sky leak detection takes out ultimate vacuum to 10Pa, Pressure Rise Rate 5Pa/h, and qualified, setting temperature program heats up, and is filled using electrical control
Install temperature program, temperature program are as follows: temperature rise of having family is to 500 DEG C, heating-up time 8h, in 500 DEG C of heat preservation 8h, later by 500
DEG C 800 DEG C are risen to, heating-up time 20h；It is passed through argon gas in temperature-rise period, guarantees that cvd furnace inert environments, the flow of argon gas are
60L/min, using the pressure in vacuum evacuation device control cvd furnace in 12000Pa；When reaching 800 DEG C of depositing temperature, it is passed through
Argon gas+hydrogen sulfide enters inside cvd furnace, and the volume ratio of argon gas and hydrogen sulfide is 40:1, is passed through argon gas and enters in crucible
Face, protective gas carry zinc fume to the settling chamber of cvd furnace, and the molar ratio of the argon gas and zinc fume that carry zinc fume is 50:
1, the molar ratio that zinc fume and hydrogen sulfide are controlled in reaction process is 1:1.5, and the pressure control of cvd furnace exists in deposition process
12000Pa, the deposition rate control of zinc sulphide are that 12 μm/min is cooled down after depositing 160h using program, are dropped first by 800 DEG C
To 500 DEG C, temperature fall time 10h；Then 300 DEG C are down to by 500 DEG C, temperature fall time 40h；It is down to room temperature by 300 DEG C later, is cooled down
Time 50h；Cvd furnace is cooled to room temperature, and is filled with cvd furnace using argon gas and is carried out gas displacement, comes out of the stove after being replaced, obtain sulphur
Change zinc product；It is detected, the integral thickness deviation for vulcanizing zinc product is less than 1.5mm, and conversion rate of products reaches 78.5%.
In certain embodiments of the present invention, the vacuum leak hunting step needs that absolute vacuum degree < will be evacuated in cvd furnace
Until 5Pa, Pressure Rise Rate < 3Pa/h.
The production method of zinc sulphide of the present invention, because gathering dust in time, obtained zinc sulphide does not generate mist spot, mist layer, decorative pattern
The defects of, and the integral thickness deviation for vulcanizing zinc product is small, conversion rate of products is high.
Although for illustrative purposes, the preferred embodiment of the present invention is had been disclosed, but the ordinary skill people of this field
Member will realize without departing from the scope and spirit of the invention as disclosed by the appended claims, various to change
Into, increase and replace be possible.
Claims (10)
1. a kind of production method of zinc sulphide, which includes placing zinc raw material in the crucible built in cvd furnace, taking out very
Sky heats up, deposits, cooling down, coming out of the stove；It is characterized by:
The process of the heating are as follows: be warming up to 700-800 DEG C；Protective gas is passed through in temperature-rise period, the flow of protective gas is
2-60L/min；
The detailed process of the deposition are as follows: 700-800 DEG C of heat preservation deposition, sedimentation time are set according to the weight of filled zinc raw material
It is fixed；It is passed through protective gas in deposition process and hydrogen sulfide enters in cvd furnace, the volume ratio of protective gas and hydrogen sulfide is 15:
1-40:1, the protective gas being passed through take zinc fume out of, and zinc fume enters mutually reciprocal with hydrogen sulfide behind the settling chamber of cvd furnace
Zinc sulphide should be generated, zinc sulphide is deposited with certain rate；Carry the protective gas of zinc fume and the molar ratio of zinc fume are as follows:
50:1-18:1, the molar ratio that zinc fume and hydrogen sulfide are controlled in reaction process is 0.85:1-1:1.5；
The process of the cooling are as follows: room temperature is down to by depositing temperature.
2. the production method of zinc sulphide according to claim 1, it is characterised in that: in heating and deposition process, deposition
Pressure control is in 5000-12000Pa in furnace.
3. the production method of zinc sulphide according to claim 1, it is characterised in that: be warming up to 700-800 DEG C of specific mistake
Journey are as follows: rise to 300-500 DEG C in 4-8h by room temperature；Then 4-8h is kept the temperature；Continue 8-20h later and is warming up to 700-800 DEG C.
4. the production method of zinc sulphide according to claim 1, it is characterised in that: be down to the specific of room temperature by depositing temperature
Process are as follows: 8-10h is down to 600-500 DEG C by depositing temperature；20-40h is down to 300-200 DEG C by 600-500 DEG C later；Finally
30-50h is down to room temperature by 300-200 DEG C.
5. the production method of the zinc sulphide according to claim 1, it is characterised in that: the detailed process come out of the stove are as follows: utilize guarantor
Shield gas is filled with cvd furnace and carries out gas displacement, comes out of the stove after being replaced, obtains zinc sulphide.
6. the production method of the zinc sulphide according to claim 1, it is characterised in that: described vacuumize needs cvd furnace
Absolute vacuum degree < 10Pa is inside evacuated to, until Pressure Rise Rate < 5Pa/h.
7. the production method of the zinc sulphide according to claim 1, it is characterised in that: the protective gas be nitrogen or
Inert gas.
8. the production method of the zinc sulphide according to claim 1, it is characterised in that: the deposition rate control of zinc sulphide exists
0.2- 12μm/min。
9. the production method of the zinc sulphide according to claim 1, it is characterised in that: the production method is in cvd furnace
It further include a vacuum leak hunting step before the interior placement zinc raw material of the crucible set.
10. the production method of the zinc sulphide according to claim 9, it is characterised in that: the vacuum leak hunting step need by
Absolute vacuum degree < 5Pa is evacuated in cvd furnace, until Pressure Rise Rate < 3Pa/h.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710572957.7A CN109250749A (en) | 2017-07-14 | 2017-07-14 | The production method of zinc sulphide |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710572957.7A CN109250749A (en) | 2017-07-14 | 2017-07-14 | The production method of zinc sulphide |
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ID=65050681
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113321236A (en) * | 2020-07-31 | 2021-08-31 | 上海交通大学 | Method for preparing zinc sulfide ultrafine powder by using zinc skins of waste zinc-manganese battery |
| CN115961349A (en) * | 2022-12-29 | 2023-04-14 | 安徽光智科技有限公司 | Growth method of high-uniformity zinc sulfide polycrystalline infrared material |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1796286A (en) * | 2004-12-24 | 2006-07-05 | 北京有色金属研究总院 | Equipment and technique for fabricating large size CVD ZnS material in high evenness |
| CN200988773Y (en) * | 2006-12-20 | 2007-12-12 | 北京有色金属研究总院 | Device for preparing high optic uniformity CVDZnS ball cover |
| CN101254940A (en) * | 2008-04-07 | 2008-09-03 | 北京科技大学 | Method for preparing Mn-doped ZnS nanostructure |
| CN101759161A (en) * | 2008-12-25 | 2010-06-30 | 北京有色金属研究总院 | Preparation method of zinc selenide with high optical quality |
| CN101759225A (en) * | 2008-12-25 | 2010-06-30 | 北京有色金属研究总院 | Device for growing ZnS at low temperature by chemical vapor deposition and technique thereof |
| CN103910378A (en) * | 2012-12-31 | 2014-07-09 | 国家纳米科学中心 | Zinc sulfide nano-wire and preparation method thereof |
-
2017
- 2017-07-14 CN CN201710572957.7A patent/CN109250749A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1796286A (en) * | 2004-12-24 | 2006-07-05 | 北京有色金属研究总院 | Equipment and technique for fabricating large size CVD ZnS material in high evenness |
| CN200988773Y (en) * | 2006-12-20 | 2007-12-12 | 北京有色金属研究总院 | Device for preparing high optic uniformity CVDZnS ball cover |
| CN101254940A (en) * | 2008-04-07 | 2008-09-03 | 北京科技大学 | Method for preparing Mn-doped ZnS nanostructure |
| CN101759161A (en) * | 2008-12-25 | 2010-06-30 | 北京有色金属研究总院 | Preparation method of zinc selenide with high optical quality |
| CN101759225A (en) * | 2008-12-25 | 2010-06-30 | 北京有色金属研究总院 | Device for growing ZnS at low temperature by chemical vapor deposition and technique thereof |
| CN103910378A (en) * | 2012-12-31 | 2014-07-09 | 国家纳米科学中心 | Zinc sulfide nano-wire and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113321236A (en) * | 2020-07-31 | 2021-08-31 | 上海交通大学 | Method for preparing zinc sulfide ultrafine powder by using zinc skins of waste zinc-manganese battery |
| CN115961349A (en) * | 2022-12-29 | 2023-04-14 | 安徽光智科技有限公司 | Growth method of high-uniformity zinc sulfide polycrystalline infrared material |
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