CN103435043A - Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology - Google Patents
Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology Download PDFInfo
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Abstract
The invention belongs to the field of polycrystalline silicon ingot, and particularly relates to a device and a process method for preparing polycrystalline silicon through the coupling of electronic beam smelting and the crystal growing technology. The device for preparing the polycrystalline silicon through the coupling of the electron beam smelting and the crystal growing technology is characterized in that a graphite crucible is arranged inside a furnace body, the outer wall of the graphite crucible is sequentially provided with a graphite heating body and a graphite insulating sleeve from inside to outside, an upper graphite cover plate of the graphite insulating sleeve can be horizontally moved, and the position on one side of the furnace body, parallel to the upper graphite cover plate, is externally connected with a hollow plate groove; a water-cooling ingot pulling mechanism is installed on the center position of the bottom of the graphite crucible; a cooling circulating water pipe is arranged inside the water-cooling ingot pulling mechanism; the top of the furnace body is provided with an electron gun, the upper end of the side part of the furnace body is provided with an inflating valve, and the lower end is provided with a deflation valve. The process method for preparing the polycrystalline silicon through the coupling of the electron beam smelting and the crystal growing technology comprises the steps of filling materials, vacuumizing, charging argon to increase the pressure, heating to smelt the silicon material, smelting through an electron beam, growing the crystal, annealing the ingot, cooling and opening the furnace to take the ingot.
Description
Technical field
The invention belongs to the polycrystalline silicon ingot casting field, particularly a kind of electron beam melting and crystal growing technology coupling prepare device and the processing method of polysilicon.
Background technology
Metallurgy method prepares solar-grade polysilicon technology the only way which must be passed as development low cost, eco-friendly solar-grade polysilicon technology of preparing, has obtained at present tremendous development, and has realized suitability for industrialized production.The metallurgy method purifying polycrystalline silicon refers to the physical metallurgy means that adopt, in the situation that silicon does not participate in occurring chemical reaction, remove successively the method for the various impurity elements (phosphorus, boron and metal) in silicon, it is not single preparation method, but a kind of Integration Method mainly utilizes saturated vapor pressure principle, segregation principle and oxidisability difference principle, adopts respectively different processing methodes, the impurity element of making a return journey in silica removal, thus be met the silicon material of solar energy polycrystalline silicon purity requirement.For example, utilize the medium smelting technique to remove the boron impurity in silicon, utilize directional freeze to remove the metallic impurity in silicon, utilize the electron beam melting technology to remove the phosphorus impurities in silicon, three kinds of melting technologies are integrated into to an operational path, through three kinds of technological processs, thereby obtain solar-grade polysilicon.
201110031566.7 1 kinds of electron beam dephosphorization of patent, except the method and apparatus of the coupling purifying polycrystalline silicon of metal be to utilize electron beam to form stabilised bath at the top of high-purity silicon ingot of low-phosphorous, low metal, after will need the silica flour of purifying to fall into bath smelting, realize that the rapid melting of powder removes the volatile impunty phosphorus in silica flour, carry out orientation simultaneously and draw ingot to make low-phosphorous polysilicon carry out directional solidification growth, by the effect of segregation, remove metallic impurity in polysilicon.This patent is that electron beam melting and directional solidification technique are combined and remove impurity element in polysilicon.
The electron beam melting technology, as the important component part in the metallurgy method technical process, can effectively remove the high saturated vapor pressure impurity in silicon, as phosphorus.Crystal growing technology, as the final link that meets the requirement of production silicon chip of preparation, is the final link of metallurgy method.But at present, in the metallurgy method technological process, electron beam melting technology and crystal growing technology are two independently links, generally by the silicon material after electron beam melting, after fragmentation, cleaning process, resulting silicon material is put into ingot furnace again and is carried out melting again, and long crystalline substance is met the ingot casting of producing the silicon chip requirement.But, in this flow process, electron beam melting technology and crystal growing technology all relate to fusing and the process of setting of silicon material, simultaneously, silicon material after electron beam melting, need to, after sandblast, fragmentation, cleaning, oven dry, just can enter long brilliant link, increased whole investment, and production efficiency is lower.
Summary of the invention
The present invention overcomes above-mentioned not enough problem, provides a kind of electron beam melting and crystal growing technology coupling to prepare device and the processing method of polysilicon, removes more efficiently the phosphorus impurities element in silicon, greatly reduces the total energy consumption in production process.
The technical scheme that the present invention adopted for achieving the above object is: a kind of electron beam melting and crystal growing technology coupling prepare the device of polysilicon, be placed with plumbago crucible in body of heater, the plumbago crucible outer wall is surrounded with graphite heating body and graphite muff from inside to outside successively, the upper graphite cover plate of graphite muff can move horizontally, and is circumscribed with hollow board slot in a side of body of heater with the parallel position place of upper graphite cover plate; The plumbago crucible bottom centre position is equipped with the water-cooled ingot pulling mechanism; It is built-in with the refrigeration cycle water pipe; The body of heater top is led to electron beam gun is installed, and the sidepiece upper end has inflation valve, and lower end has purging valve.
The preferred plus silicon carbide of plumbago crucible internal surface or silicon nitride coating.
A kind of processing method that adopts electron beam melting and crystal growing technology coupling to prepare the device of polysilicon, step is as follows:
(1) charging vacuumizes: will after silicon material cleaning, drying, put into plumbago crucible, and will vacuumize in body of heater;
(2) adding argon gas boosts: by inflation valve, to passing into argon gas in body of heater, boost;
(3) heat up and make the fusing of silicon material: mobile graphite cover plate covers to plumbago crucible top, graphite heating body is energized to the silicon material and is fused into silicon liquid fully;
(4) electron beam melting: body of heater and electron beam gun are vacuumized again, remove the graphite cover plate on plumbago crucible, unlocking electronic rifle after setting electron beam gun power, carry out electron beam melting to silicon liquid surface, and melting is closed electron beam gun after finishing;
(5) crystal is long brilliant: mobile graphite cover plate covers to plumbago crucible top, to being filled with argon gas in body of heater, boosts, and starts the water-cooled ingot pulling mechanism and draws ingot, and plumbago crucible is pulled out to the thermal field of graphite heating body until long brilliant end;
(6) ingot casting annealing: control graphite heating body temperature of thermal field is set in below the silicon fusing point, start the water-cooled ingot pulling mechanism, plumbago crucible is risen up into to thermal field again, carry out insulation annealing;
(7) cool, blow-on gets ingot: control the rate of temperature fall of graphite heating body, after the ingot casting temperature is reduced, open purging valve, equipment is exitted, then ingot casting is taken out in blow-on.
Preferred version is as follows:
This silicon material is that phosphorus content is 0.005～0.006%, metal content lower than 0.0001%, boron content is lower than 0.000015% polycrystalline silicon material.
In step (3), the temperature rise rate of graphite heating body is 200～250 ℃/h.
Unlocking electronic rifle in step (4), setting electron beam gun power is 90～120kw.
The water-cooled ingot pulling mechanism draws ingot speed 0.15～0.20mm/min in step (5).
In step (6), temperature of thermal field is 1200～1300 ℃.
In step (7), rate of temperature fall is 100～150 ℃/h.
In the present invention, plumbago crucible is put into to graphite heating body, the additional graphite heat insulation sheath of graphite heating body, play insulation effect, and plumbago crucible can be the splicing crucible simultaneously, is convenient to take the taking-up ingot casting apart after blow-on; Plumbago crucible internal surface plus silicon carbide coating, avoid silicon and graphite to react, and simultaneously, prevents sticky crucible phenomenon.Mechanical pump, lobe pump, diffusion pump and molecular pump are vacuum field common device, in apparatus of the present invention, are used in conjunction with, and body of heater and electron beam gun are vacuumized to processing; Silicon melt surface in the electron beam irradiation plumbago crucible, increase the bath surface temperature, increases the thermograde of the following near zone in surface and surface, and the disturbance of strengthening silicon melt, strengthen the surface effects that the phosphorus volatilization is removed, and removes the phosphorus impurities in silicon; Upper graphite cover plate, on plumbago crucible top, can move at horizontal plane, when heat fused, can cover on plumbago crucible, carries out the insulation of thermal field, when carrying out electron beam melting, upper graphite cover plate is removed, and high insulating effect, be skillfully constructed and easy to operate.
Advantage of the present invention: the method is coupled electron beam melting technology and long brilliant process effectively, thereby realized realizing the purpose of two kinds of production technique on same equipment, utilize graphite heating body to carry out the melted silicon material, utilize the electron irradiated silicon bath surface, strengthening surface volatilization effect, the efficient volatility phosphorus impurities of removing in silicon, then long crystalline substance, reduced fragmentation, clean and dry link, save input and the floor space of relevant device, energy expenditure while having greatly reduced independent production, total energy consumption reduces over 30%, production efficiency can improve 40% left and right.
The accompanying drawing explanation
Fig. 1 is the device schematic diagram that electron beam melting and crystal growing technology coupling prepare polysilicon.
In figure, 1, electron beam gun, 2, upper mechanical pump, 3, upper lobe pump, 4, upper molecular pump, 5, body of heater, 6, silicon melt, 7, upper graphite cover plate, 8, the graphite muff, 9, graphite heating body, 10, purging valve, 11, the water-cooled ingot pulling mechanism, 12, refrigeration cycle water pipe, 13, inflation valve, 14, the side mechanical pump, 15, side lobe pump, 16, the side diffusion pump, 17, plumbago crucible.
Embodiment
Describe the present invention in detail below in conjunction with specific embodiment and accompanying drawing, but the present invention is not limited to specific embodiment.
Embodiment 1:
Be placed with plumbago crucible 17 in body of heater 5, plumbago crucible 17 internal surface plus silicon carbide coatings.Plumbago crucible 17 outer walls are surrounded with graphite heating body 9 and graphite muff 8 from inside to outside successively, and the upper graphite cover plate 7 of graphite muff 8 can move horizontally, and are circumscribed with hollow board slot in a side of body of heater 5 with the parallel position place of upper graphite cover plate 7; Plumbago crucible 5 bottom centre positions are equipped with water-cooled ingot pulling mechanism 11; It is built-in with refrigeration cycle water pipe 12; Body of heater 5 tops are led to electron beam gun 1 are installed, and the sidepiece upper end has inflation valve 13, and lower end has purging valve 10.
Embodiment 2:
Device in employing embodiment 1 carries out electron beam melting and the crystal growing technology coupling prepares polysilicon:
(1) polycrystalline silicon material that by the 500kg phosphorus content be 0.005%, metal content 0.00009%, boron content is 0.000014%, utilize cleaning equipment to clean, and removes surperficial dust, oil stain, puts into drying baker, under 80 ℃, dries; Silicon material after drying is put into to plumbago crucible 17, will position in plumbago crucible 17 immigration equipment; Plumbago crucible 17 is put into to graphite heating body 9, and the additional graphite heat insulation sheath 8 of graphite heating body 9, play insulation effect.
(2) equipment is closed to stove, opening device cooling circulating water device, lead to cooling circulating water by refrigeration cycle water pipe 12 to equipment; Open the body of heater vacuum system, at first after utilizing body of heater 5 vacuum system side mechanical pumps 14 and side lobe pump 15 that the body of heater vacuum is evacuated to 1Pa, close side mechanical pump 14 and side lobe pump 15, by inflation valve 13, to body of heater 5 inside, pass into argon gas, to the body of heater internal pressure to 50KPa.
(3) in movement, graphite cover plate 7 covers to plumbago crucible 17 tops, starts water-cooled ingot pulling mechanism 11; Give graphite heating body 9 energisings, temperature rise rate is 200 ℃/h, and to 1550 ℃ of insulation 6h, the silicon material melts fully.
(4) close inflation valve 13, stop to the interior applying argon gas of body of heater 5; Remove the graphite cover plate 7 on plumbago crucible 17, start side mechanical pump 14 and side lobe pump 15 body of heater 5 vacuum tightnesss are evacuated to 8Pa, then start side diffusion pump 16, the vacuum tightness of body of heater 5 is evacuated to 0.004Pa, start upper mechanical pump 2, upper lobe pump 3 and upper molecular pump 4 simultaneously, electron beam gun 1 vacuum tightness is evacuated to 0.0004Pa.Pre-thermionic electron guns 1, heater current is set to 800mA, to electron beam gun 1 preheating 15min, closes the preheating button; Setting electron beam gun 1 power is 100kW, and unlocking electronic rifle 1, in increasing the power process, is controlled electron beam 19 energy distribution; Utilize 19 pairs of silicon melt 6 surfaces of electron beam to carry out electron beam melting, increase the thermograde of silicon melt 6 surfaces and the following near zone in surface, 6 disturbances of strengthening silicon melt, strengthen the surface effects that the phosphorus volatilization is removed, and removes the phosphorus impurities in silicon; After melting 3h, the phosphorus impurities in silicon is removed effectively, closes electron beam gun 1.
(5) in movement, graphite cover plate 7 covers to plumbago crucible 17 tops, be filled with argon gas by inflation valve 17 in body of heater 5, air pressure remains on 50KPa, starts water-cooled ingot pulling mechanism 11, drawing ingot speed is 0.15mm/min, and plumbago crucible 17 is pulled out to graphite heating body 9 thermal fields; After plumbago crucible 17 removes graphite heating body 9 fully, close water-cooled ingot pulling mechanism 11, long brilliant end of processing.
(6) control graphite heating body 9, temperature of thermal field is set in to 1300 ℃, start water-cooled ingot pulling mechanism 11, plumbago crucible 17 is risen up into to thermal field, and under 1300 ℃, after insulation 3h, controlling graphite heating body 9 rate of temperature fall is 100 ℃/h, make the ingot casting temperature be down to 1000 ℃, close graphite heating body 9 power supplys.
(7) after 10h cools, open purging valve 10, equipment is exitted, then ingot casting is taken out in blow-on.
Embodiment 3:
Device in employing embodiment 1 carries out electron beam melting and the crystal growing technology coupling prepares polysilicon:
(1) polycrystalline silicon material that by the 500kg phosphorus content be 0.005%, metal content is 0.00008%, boron content is 0.000013%, utilize cleaning equipment to clean, and removes surperficial dust, oil stain, puts into drying baker, under 80 ℃, dries; Silicon material after drying is put into to plumbago crucible 17, will position in plumbago crucible 17 immigration equipment; Plumbago crucible 17 is put into to graphite heating body 9, and the additional graphite heat insulation sheath 8 of graphite heating body 9, play insulation effect.
(2) equipment is closed to stove, opening device cooling circulating water device, lead to cooling circulating water by refrigeration cycle water pipe 12 to equipment; Open the body of heater vacuum system, at first after utilizing body of heater 5 vacuum system side mechanical pumps 14 and side lobe pump 15 that body of heater 5 vacuum are evacuated to 0.5Pa, close side mechanical pump 14 and side lobe pump 15, by inflation valve 13, to body of heater 5 inside, pass into argon gas, to body of heater 5 internal pressures to 48KPa.
(3) in movement, graphite cover plate 7 covers to plumbago crucible 17 tops, starts water-cooled ingot pulling mechanism 11; Give graphite heating body 9 energisings, 250 ℃/h of temperature rise rate, to 1550 ℃ of insulation 5h, the silicon material melts fully.
(4) close inflation valve 13, stop to the interior applying argon gas of body of heater 5; Remove the graphite cover plate 7 on plumbago crucible 17, start side mechanical pump 14 and side lobe pump 15 body of heater 5 vacuum tightnesss are evacuated to 9Pa, then start side diffusion pump 16, the vacuum tightness of body of heater 5 is evacuated to 0.003Pa, start upper mechanical pump 2, upper lobe pump 3 and upper molecular pump 4 simultaneously, electron beam gun 1 vacuum tightness is evacuated to 0.0003Pa.Pre-thermionic electron guns 1, heater current is set to 850mA, to electron beam gun 1 preheating 15min, closes the preheating button; Setting electron beam gun 1 power is 120kW, and unlocking electronic rifle 1, in increasing the power process, is controlled electron beam 19 energy distribution; Utilize 19 pairs of silicon melt 6 surfaces of electron beam to carry out electron beam melting, increase the thermograde of silicon melt 6 surfaces and the following near zone in surface, 6 disturbances of strengthening silicon melt, strengthen the surface effects that the phosphorus volatilization is removed, and removes the phosphorus impurities in silicon; After melting 3h, the phosphorus impurities in silicon is removed effectively, closes electron beam gun 1.
(5) in movement, graphite cover plate 7 covers to plumbago crucible 17 tops, be filled with argon gas by inflation valve 13 in body of heater 5, air pressure remains on 48KPa, starts water-cooled ingot pulling mechanism 11, drawing ingot speed is 0.13mm/min, and plumbago crucible 17 is pulled out to graphite heating body 9 thermal fields; After plumbago crucible 17 removes graphite heating body 9 fully, close water-cooled ingot pulling mechanism 11, long brilliant end of processing.
(6) control graphite heating body 9, temperature of thermal field is set in to 1250 ℃, start water-cooled ingot pulling mechanism 11, plumbago crucible 17 is risen up into to thermal field again, be incubated 3.5h under 1250 ℃, controlling graphite heating body 9 rate of temperature fall is 100 ℃/h, makes the ingot casting temperature slowly, evenly be down to 1000 ℃, closes graphite heating body 9 power supplys.
(7) after 11h cools, open purging valve 10, equipment is exitted, then ingot casting is taken out in blow-on.
Embodiment 4:
Device in employing embodiment 1 carries out electron beam melting and the crystal growing technology coupling prepares polysilicon:
(1) polycrystalline silicon material that by the 500kg phosphorus content be 0.005%, metal content is 0.00007%, boron content is 0.000013%, utilize cleaning equipment to clean, and removes surperficial dust, oil stain, puts into drying baker, under 80 ℃, dries; Silicon material after drying is put into to plumbago crucible 17, will position in plumbago crucible 17 immigration equipment; Plumbago crucible 17 is put into to graphite heating body 9, and the additional graphite heat insulation sheath 8 of graphite heating body 9, play insulation effect.
(2) equipment is closed to stove, opening device cooling circulating water device, lead to cooling circulating water by refrigeration cycle water pipe 12 to equipment; Open the body of heater vacuum system, at first after utilizing body of heater 5 vacuum system side mechanical pumps 14 and side lobe pump 15 that body of heater 5 vacuum are evacuated to 0.5Pa, close side mechanical pump 14 and side lobe pump 15, by inflation valve 13, to body of heater 5 inside, pass into argon gas, to body of heater 5 internal pressures to 48KPa.
(3) in movement, graphite cover plate 7 covers to plumbago crucible 17 tops, starts water-cooled ingot pulling mechanism 11; Give graphite heating body 9 energisings, 220 ℃/h of temperature rise rate, to 1550 ℃ of insulation 5.5h, the silicon material melts fully.
(4) close inflation valve 13, stop to the interior applying argon gas of body of heater 5; Remove the graphite cover plate 7 on plumbago crucible 17, start side mechanical pump 14 and side lobe pump 15 body of heater 5 vacuum tightnesss are evacuated to 8Pa, then start side diffusion pump 16, the vacuum tightness of body of heater 5 is evacuated to 0.003Pa, start upper mechanical pump 2, upper lobe pump 3 and upper molecular pump 4 simultaneously, electron beam gun 1 vacuum tightness is evacuated to 0.0003Pa.Pre-thermionic electron guns 1, heater current is set to 780mA, to electron beam gun 1 preheating 15min, closes the preheating button; Setting electron beam gun 1 power is 120kW, and unlocking electronic rifle 1, in increasing the power process, is controlled electron beam 19 energy distribution; Utilize 19 pairs of silicon melt 6 surfaces of electron beam to carry out electron beam melting, increase the thermograde of silicon melt 6 surfaces and the following near zone in surface, 6 disturbances of strengthening silicon melt, strengthen the surface effects that the phosphorus volatilization is removed, and removes the phosphorus impurities in silicon; After melting 3h, the phosphorus impurities in silicon is removed effectively, closes electron beam gun 1.
(5) in movement, graphite cover plate 7 covers to plumbago crucible 17 tops, be filled with argon gas by inflation valve 17 in body of heater 5, air pressure remains on 48KPa, starts water-cooled ingot pulling mechanism 11, drawing ingot speed is 0.14mm/min, and plumbago crucible 17 is pulled out to graphite heating body 9 thermal fields; After plumbago crucible 17 removes graphite heating body 9 fully, close water-cooled ingot pulling mechanism 11 and graphite heating body 9 power supplys, long brilliant end of processing.
(6) control graphite heating body 9, temperature of thermal field is set in 1200 ℃, starts water-cooled ingot pulling mechanism 11, plumbago crucible 17 is risen up into to thermal field again, under 1200 ℃, be incubated 4h, controlling graphite heating body 9 rate of temperature fall is 120 ℃/h, make the ingot casting temperature be down to 1000 ℃, close graphite heating body 9 power supplys.
(7) after 11.5h cools, open purging valve 10, equipment is exitted, then ingot casting is taken out in blow-on.
In sum, this device is coupled electron beam melting technology and long brilliant process effectively, thereby realized realizing the purpose of two kinds of production technique on same equipment, utilize graphite heating body to carry out the melted silicon material, utilize the electron irradiated silicon bath surface, strengthening surface volatilization effect, the efficient volatility phosphorus impurities of removing in silicon, then long crystalline substance, reduced fragmentation, cleaned and dried link, input and the floor space of saving relevant device, the energy expenditure while having greatly reduced independent production, total energy consumption reduces over 30%, and production efficiency can improve 40%.
Claims (9)
1. an electron beam melting and crystal growing technology coupling prepare the device of polysilicon, it is characterized in that in body of heater (5) being placed with plumbago crucible (17), plumbago crucible (17) outer wall is surrounded with graphite heating body (9) and graphite muff (8) from inside to outside successively, the upper graphite cover plate (7) of graphite muff (8) can move horizontally, and is circumscribed with hollow board slot in a side of body of heater (5) and the parallel position place of upper graphite cover plate (7); Plumbago crucible (5) bottom centre position is equipped with water-cooled ingot pulling mechanism (11); It is built-in with refrigeration cycle water pipe (12); Body of heater (5) top is led to electron beam gun (1) is installed, and the sidepiece upper end has inflation valve (13), and lower end has purging valve (10).
2. a kind of electron beam melting according to claim 1 and crystal growing technology coupling prepare the device of polysilicon, it is characterized in that described plumbago crucible (17) internal surface plus silicon carbide or silicon nitride coating.
3. the processing method of a device that adopts electron beam melting claimed in claim 1 and crystal growing technology to be coupled to prepare polysilicon is characterized in that step is as follows:
(1) charging vacuumizes: will put into plumbago crucible (17) after silicon material cleaning, drying, and will vacuumize in body of heater (5);
(2) adding argon gas boosts: by inflation valve (18), to passing into argon gas in body of heater (5), boost;
(3) heat up and make the fusing of silicon material: mobile graphite cover plate (7) covers to plumbago crucible (17) top, graphite heating body (9) is energized to the silicon material and is fused into silicon liquid fully;
(4) electron beam melting: body of heater (5) and electron beam gun (1) are vacuumized again, remove the graphite cover plate (7) on plumbago crucible (17), unlocking electronic rifle (1) after setting electron beam gun (1) power, electron beam melting is carried out in silicon liquid surface, and melting is closed electron beam gun (1) after finishing;
(5) crystal is long brilliant: mobile graphite cover plate (7) covers to plumbago crucible (17) top, to being filled with argon gas in body of heater (5), boost, start water-cooled ingot pulling mechanism (11) and draw ingot, plumbago crucible (17) is pulled out to the thermal field of graphite heating body (9) until long brilliant the end;
(6) ingot casting annealing: control graphite heating body (9), temperature of thermal field is set in below the silicon fusing point, start water-cooled ingot pulling mechanism (11), plumbago crucible (17) is risen up into to thermal field again, carry out insulation annealing;
(7) cool, blow-on gets ingot: control the rate of temperature fall of graphite heating body (9), after the ingot casting temperature is reduced, open purging valve (10), equipment is exitted, then ingot casting is taken out in blow-on.
4. a kind of processing method that adopts the coupling of electron beam melting and crystal growing technology to prepare the device of polysilicon according to claim 3, it is characterized in that this silicon material is that phosphorus content is 0.005～0.006%, metal content lower than 0.0001%, boron content is lower than 0.000015% polycrystalline silicon material.
5. a kind of processing method that adopts electron beam melting and crystal growing technology coupling to prepare the device of polysilicon according to claim 3, is characterized in that the temperature rise rate of graphite heating body (9) in step (3) is 200～250 ℃/h.
6. a kind of processing method that adopts electron beam melting and crystal growing technology coupling to prepare the device of polysilicon according to claim 3, is characterized in that unlocking electronic rifle (1) in step (4), and setting electron beam gun (1) power is 90～120kW.
7. a kind of processing method that adopts the coupling of electron beam melting and crystal growing technology to prepare the device of polysilicon according to claim 3, what it is characterized in that water-cooled ingot pulling mechanism (11) in step (5) draws ingot speed 0.15～0.20mm/min.
8. a kind of processing method that adopts electron beam melting and crystal growing technology coupling to prepare the device of polysilicon according to claim 3, is characterized in that in step (5), temperature of thermal field is 1200～1300 ℃.
9. a kind of processing method that adopts electron beam melting and crystal growing technology coupling to prepare the device of polysilicon according to claim 3, is characterized in that in step (5), rate of temperature fall is 100～150 ℃/h.
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| CN104528732A (en) * | 2014-12-25 | 2015-04-22 | 大连理工大学 | Novel device and method for reducing energy consumption of electron beam melting technology |
| CN104528732B (en) * | 2014-12-25 | 2017-04-12 | 大连理工大学 | Novel device and method for reducing energy consumption of electron beam melting technology |
| CN105950878A (en) * | 2016-04-26 | 2016-09-21 | 中国工程物理研究院材料研究所 | Device and method for removing impurity in uranium metal effectively |
| CN105950878B (en) * | 2016-04-26 | 2017-09-22 | 中国工程物理研究院材料研究所 | A kind of effective apparatus and method for removing impurity in uranium metal |
| CN110926212A (en) * | 2019-12-18 | 2020-03-27 | 西安聚能高温合金材料科技有限公司 | Device and method for adding heat insulation material to vacuum induction cast ingot in vacuum environment |
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