CN104131338A - Electron beam top local heating solidification polysilicon impurity-removing device and polysilicon heating solidification impurity-removing method - Google Patents
Electron beam top local heating solidification polysilicon impurity-removing device and polysilicon heating solidification impurity-removing method Download PDFInfo
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- CN104131338A CN104131338A CN201410339745.0A CN201410339745A CN104131338A CN 104131338 A CN104131338 A CN 104131338A CN 201410339745 A CN201410339745 A CN 201410339745A CN 104131338 A CN104131338 A CN 104131338A
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Abstract
The invention relates to an electron beam top local heating solidification polysilicon impurity-removing device and an electron beam top local heating solidification polysilicon impurity-removing method. According to the invention, a graphite pedestal is arranged on a lower part in a furnace body. A crucible accommodating a polysilicon material is arranged on the graphite pedestal. A heating body connected with a system control device is arranged on the periphery of the crucible in the furnace body. An electron gun is arranged on the upper part of the furnace body. When the electron gun is working, a generated electron beam points just at the inner side of the crucible. The method comprises the following steps: the polysilicon material is added into the crucible; the crucible is placed on the graphite pedestal, and a furnace door is closed; high vacuum is pumped, wherein a vacuum degree is lower than 0.1 Pa; parameters are checked, and a program is run for heating; crystal growth is allowed; a solid-liquid interface height is measured; the surface of the liquid is subjected to local heating by using the electron gun, and a protrusion part is formed on the interface; the material is cooled and fetched from the furnace; and the protruding high-density impurity zone is removed. The device and the method provided by the invention have the advantages of high yield and low cost.
Description
Technical field
The present invention relates to that a kind of purification and ingot casting device and method of polysilicon, particularly a kind of electron beam top local heating solidify polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method.
Background technology
In the purification or ingot casting link of polysilicon, top silicon material is impurity compact district, and silicon ingot can spread from top area with high mercury to bottom concentration range at coagulation forming rear impurity, thereby affects utilization rate of silicon ingot.After silicon ingot coagulation forming due to diffusion of contaminants effect, increase in time of impurity range and expanding, the height of excision also increases thereupon, yield decreases; Usual method is after silicon ingot moulding, and with professional cutting equipment, by the high impurity range excision in top, the high impurity range cost in post-processed top is high.
Summary of the invention
The object of this invention is to provide a kind of polysilicon purify and ingot casting process in temperature of solidification occur that difference, solid-liquid interface can form projection, boss and can assemble that the electron beam top local heating of impurity is solidified polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method, to facilitate, remove the bossing with highly dense impurity, improve yield, reduce costs.
Electron beam of the present invention top local heating is solidified polysilicon knot screen, comprise body of heater, in body of heater, bottom is provided with graphite base, on graphite base, is furnished with the crucible that packs polycrystalline silicon material into, in body of heater, be positioned at crucible periphery and be provided with the heating member joining with system control device, in upper of furnace body, electron beam gun is installed, the electron beam producing during electron beam gun work just points to the inner side of crucible.
Of the present inventionly utilize electron beam top local heating to solidify polysilicon knot screen polysilicon is added to thermocoagulation impurity-removing method, step is as follows:
(1), in crucible, pack polycrystalline silicon material into, and crucible is placed on graphite base, closes fire door, pumping high vacuum, and vacuum tightness is less than 0.1Pa;
, monitoring device parameters, the program of confirming to bring into operation after errorless;
, temperature reaches after 1420-1480 ℃, enters keeping warm mode, soaking time is 1-2 hour, until occur after the complete melting phenomenon of silicon material, and sees that by viewing window silicon material is completely in liquid state, enters the long brilliant stage;
, the long brilliant stage, measure a solid-liquid interface height by quartz pushrod each hour, and control the speed of growth of solid-liquid interface;
(5), when the position of solid-liquid interface arrives apart from the position of silicon liquid top 3-8 centimetre, setting program temperature control reduces the speed of growth of solid-liquid interface, the Electron Beam spot diameter of adjusting electron beam gun makes to restraint spot and is radiated on silicon liquid liquid level and irradiated area accounts for 1/3 of silicon liquid liquid level, by adjustment, restraint spot and line size, make solid-liquid interface form convex, enter to restraint the centripetal process of growth centered by spot, line size is controlled between 300-500mA;
, cooling stages, silicon ingot is cooled to design temperature to come out of the stove;
(7), cut off the highly dense impurity range part of convex part.
Utilize knot screen of the present invention to purify and ingot casting to polysilicon, silicon liquid is in long brilliant process under the effect at electron beam, produce inhomogeneous thermal field, the delayed setting of bundle spot irradiation area, makes the direction that molten silicon solidifies that change occur, and causes molten silicon centered by bundle spot, form centripetal solidifying, due to the pyrocondensation cold expanding of silicon materials, the high impurity range final set in silicon ingot top forms projection, and the high impurity of purification moulding rearward projection goes to be easy to dispose.Electron beam, for regional area provides thermal source, is efficiently easy to control, and has improved yield, has reduced cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the specific embodiment of the invention.
Embodiment
As shown in Figure 1: electron beam of the present invention top local heating is solidified polysilicon knot screen, comprise body of heater 3, in the interior bottom of body of heater 3, be provided with graphite base 4, on graphite base 4, is furnished with the crucible 2 that packs polycrystalline silicon material into, in body of heater 3, be positioned at crucible 2 peripheries and be provided with the heating member 1 joining with system control device, on body of heater 3 tops, electron beam gun 7 is installed, the electron beam producing during electron beam gun 7 work just points to the inner side of crucible 2.
Of the present inventionly utilize above-mentioned knot screen to add thermocoagulation impurity-removing method to polysilicon, step is as follows:
(1), in crucible 2, pack polycrystalline silicon material into, and crucible 2 is placed on graphite base 4, closes the fire door of body of heater 3, pumping high vacuum, and vacuum tightness is less than 0.1Pa;
, monitoring device parameters, the program of confirming to bring into operation after errorless;
, temperature reaches after 1420-1480 ℃, enters keeping warm mode, soaking time is 1-2 hour, until occur after the complete melting phenomenon of silicon material, and sees that by viewing window silicon material is completely in liquid state, enters the long brilliant stage;
, the long brilliant stage, measure solid-liquid interface 6 height one time by quartz pushrod each hour, and control the speed of growth of solid-liquid interface;
(5), when solid-liquid interface 6 positions arrive apart from the position of silicon liquid top 3-8 centimetre, setting program temperature control reduces the speed of growth of solid-liquid interface, the beam spot diameter, of adjusting the electron beam 8 that electron beam gun 7 produces makes to restraint spot and is radiated on silicon liquid liquid level and irradiated area accounts for 1/3 of silicon liquid liquid level, by adjustment, restraint spot and line size, make solid-liquid interface form convex 5, enter to restraint the centripetal process of growth centered by spot, line size is controlled at 300mA or 350mA or 400mA or 450mA or 500mA, between 300-500mA, all can;
, cooling stages, silicon ingot is cooled to design temperature to come out of the stove;
(7), cut off the highly dense impurity range part of convex part.
Claims (2)
1. an electron beam top local heating is solidified polysilicon knot screen, comprise body of heater (3), in body of heater (3), bottom is provided with graphite base (4), on graphite base (4), is furnished with the crucible (2) that packs polycrystalline silicon material into, in body of heater (3), be positioned at crucible (2) periphery and be provided with the heating member (1) joining with system control device, it is characterized in that: on body of heater (3) top, electron beam gun (7) is installed, the electron beam producing during electron beam gun (7) work just points to the inner side of crucible (2).
2. utilize the knot screen described in claim 1 to add a thermocoagulation impurity-removing method to polysilicon, it is characterized in that: step is as follows:
(1), in crucible (2), pack polycrystalline silicon material into, and crucible (2) to be placed in graphite base (4) upper, close fire door, pumping high vacuum, vacuum tightness is less than 0.1Pa;
, monitoring device parameters, the program of confirming to bring into operation after errorless;
, temperature reaches after 1420-1480 ℃, enters keeping warm mode, soaking time is 1-2 hour, until occur after the complete melting phenomenon of silicon material, and sees that by viewing window silicon material is completely in liquid state, enters the long brilliant stage;
, the long brilliant stage, measure a solid-liquid interface height by quartz pushrod each hour, and control the speed of growth of solid-liquid interface;
(5), when the position of solid-liquid interface arrives apart from the position of silicon liquid top 3-8 centimetre, setting program temperature control reduces the speed of growth of solid-liquid interface, the Electron Beam spot diameter of adjusting electron beam gun (7) makes to restraint spot and is radiated on silicon liquid liquid level and irradiated area accounts for 1/3 of silicon liquid liquid level, by adjustment, restraint spot and line size, make solid-liquid interface form convex, enter to restraint the centripetal process of growth centered by spot, line size is controlled between 300-500mA;
, cooling stages, silicon ingot is cooled to design temperature to come out of the stove;
(7), cut off the highly dense impurity range part of convex part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410339745.0A CN104131338B (en) | 2014-07-17 | 2014-07-17 | Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410339745.0A CN104131338B (en) | 2014-07-17 | 2014-07-17 | Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method |
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| CN104131338A true CN104131338A (en) | 2014-11-05 |
| CN104131338B CN104131338B (en) | 2016-08-24 |
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| CN201410339745.0A Expired - Fee Related CN104131338B (en) | 2014-07-17 | 2014-07-17 | Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023521A (en) * | 2018-08-29 | 2018-12-18 | 孟静 | The preparation method of solar cell module polysilicon chip |
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| CN1099434A (en) * | 1993-07-15 | 1995-03-01 | 瓦克化学电子工业原料有限公司 | Process for producing rods or blocks of semiconductor material which expands on solidification by crystallization of a melt produced from granular material, and also an apparatus for carrying out..... |
| CN1167728A (en) * | 1996-03-19 | 1997-12-17 | 川崎制铁株式会社 | Process and apparatus for refining silicon |
| CN101318655A (en) * | 2008-06-19 | 2008-12-10 | 大连理工大学 | Method and device for removing foreign matter of phosphor in polysilicon |
| KR20130119398A (en) * | 2013-09-26 | 2013-10-31 | 한국에너지기술연구원 | Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar |
| CN103435043A (en) * | 2013-08-28 | 2013-12-11 | 青岛隆盛晶硅科技有限公司 | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology |
| CN203440096U (en) * | 2013-08-28 | 2014-02-19 | 青岛隆盛晶硅科技有限公司 | Device for preparing polycrystalline silicon through coupling of electron-beam smelting technology and crystal growing technology |
| CN203559160U (en) * | 2013-11-22 | 2014-04-23 | 青岛隆盛晶硅科技有限公司 | Device for preparing polycrystalline silicon through coupling of electron beam deoxygenation and initial ingot casting |
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2014
- 2014-07-17 CN CN201410339745.0A patent/CN104131338B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1099434A (en) * | 1993-07-15 | 1995-03-01 | 瓦克化学电子工业原料有限公司 | Process for producing rods or blocks of semiconductor material which expands on solidification by crystallization of a melt produced from granular material, and also an apparatus for carrying out..... |
| CN1167728A (en) * | 1996-03-19 | 1997-12-17 | 川崎制铁株式会社 | Process and apparatus for refining silicon |
| CN101318655A (en) * | 2008-06-19 | 2008-12-10 | 大连理工大学 | Method and device for removing foreign matter of phosphor in polysilicon |
| CN103435043A (en) * | 2013-08-28 | 2013-12-11 | 青岛隆盛晶硅科技有限公司 | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology |
| CN203440096U (en) * | 2013-08-28 | 2014-02-19 | 青岛隆盛晶硅科技有限公司 | Device for preparing polycrystalline silicon through coupling of electron-beam smelting technology and crystal growing technology |
| KR20130119398A (en) * | 2013-09-26 | 2013-10-31 | 한국에너지기술연구원 | Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar |
| CN203559160U (en) * | 2013-11-22 | 2014-04-23 | 青岛隆盛晶硅科技有限公司 | Device for preparing polycrystalline silicon through coupling of electron beam deoxygenation and initial ingot casting |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109023521A (en) * | 2018-08-29 | 2018-12-18 | 孟静 | The preparation method of solar cell module polysilicon chip |
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