CN109245509A - The lossless asynchronous absorption circuit of peak voltage and NPC tri-level circuit - Google Patents
The lossless asynchronous absorption circuit of peak voltage and NPC tri-level circuit Download PDFInfo
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- CN109245509A CN109245509A CN201811309462.6A CN201811309462A CN109245509A CN 109245509 A CN109245509 A CN 109245509A CN 201811309462 A CN201811309462 A CN 201811309462A CN 109245509 A CN109245509 A CN 109245509A
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
- H02M1/342—Active non-dissipative snubbers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The present invention provides a kind of lossless asynchronous absorption circuit of peak voltage and NPC tri-level circuit, the lossless asynchronous absorption circuit of the peak voltage, including with concatenated second diode of switching device, bus capacitance, third diode and Absorption Capacitance, Opposite direction connection has first diode between the common intersection and Absorption Capacitance of the switching device and the second diode anode and the common intersection of third diode cathode, and connecting or disconnecting for the switching device is controlled by pulse drive signal；When switching device disconnects, charge circuit is constituted by first diode, Absorption Capacitance；When switching device is connected, unidirected discharge circuit is constituted by Absorption Capacitance, switching device, the second diode, bus capacitance and third diode.The present invention is able to suppress the peak voltage and Lossless Snubber peak voltage energy of switching device generation.
Description
Technical field
The present invention relates to switch power technology field, in particular to the lossless asynchronous absorption circuit of a kind of peak voltage and NPC
Tri-level circuit.
Background technique
In switch power technology field, the main components of Switching Power Supply are switching device, since switching device is in electricity
It needs to connect by conducting wire with other component circuits in resource loop, and there is parasitic electricity in the pin of conducting wire, even switching device
Sense, then the length and width of conducting wire influences the size of parasitic inductance in the link circuit of switching device, while conducting wire is printing
The size that cabling mode affects parasitic inductance is laid out in printed circuit board.Fig. 1 is the simplified basic diagram of switching device output loop.
Referring to FIG. 1, switching device Q1 constitutes current loop by conducting wire and capacitor C1, due to the pin of conducting wire and switching device Q1,
Even there are parasitic inductances for the pin of capacitor C1.Fig. 2 is the equivalent circuit schematic of switching device output loop parasitic inductance,
It include parasitic inductance Ls1 and Ls2 in the series loop of switching device Q1, being attempted by the both ends switching device Q1 is switching device Q1
Parasitic capacitance Coss, then switching device Q1 end when, cannot be mutated according to the electric current at the both ends parasitic inductance Ls1 and Ls2
Characteristic, then the electric current i of parasitic inductance charges to the parasitic capacitance Coss of switching device Q1, will be in switching device after charging
The output end of Q1 causes peak voltage, when higher peak voltage is more than the voltage rating of switching device Q1, will lead to switch
Device Q1 is breakdown and damages.Wherein, connecting or disconnecting for switching device Q1 is controlled by pulse drive signal.
For the peak voltage for inhibiting switching device to generate in cut-off, it is therefore desirable in switching device output end and connect one
A absorbing circuit.Fig. 3 is the schematic diagram of the output end parallel connection absorbing circuit of switching device, and Fig. 4 is that switching device output loop is posted
Current loop schematic diagram of the raw induction equivalent circuit when switching device is connected, Fig. 5 is switching device output loop parasitic inductance
Current loop schematic diagram of the equivalent circuit when switching device disconnects.Referring to FIG. 4, the working principle of switching device Q1 is worked as follows
When switching device Q1 is connected, electric current i constitutes conducting circuit by parasitic inductance Ls1, switching device Q1 and parasitic inductance Ls2.Please
With reference to Fig. 5, when switching device Q1 cut-off, switching device Q1 disconnects access, due to parasitic inductance Ls1 and parasitic inductance Ls2 two
The electric current at end cannot be mutated, then electric current constitutes through parasitic inductance Ls1 absorbing circuit and parasitic inductance Ls2 and circuit is connected, and without
Switching device Q1 is crossed, thus peak voltage caused by inhibiting by absorbing circuit due to parasitic inductance.
Absorbing circuit common in the art is RC absorbing circuit and RCD absorbing circuit.These absorbing circuits it is basic
Working principle is exactly to provide the bypass change of current when switching device disconnects for the switching device, is stored in parasitic inductance with absorbing
Energy, and it is clamped the voltage of switching device output end, to inhibit peak voltage.Although such scheme has certain effect
Fruit can reduce the amplitude of Switching Power Supply peak voltage, but the energy demand of reduced peak voltage is by the resistance in circuit
Fever is converted into a large amount of heat, reduces the transfer efficiency of Switching Power Supply, i.e., is constituted due to the presence of resistance and damaged suction
Circuit is received, while in order not to increase the loss of absorbing circuit, the type selecting of the capacitance size of Absorption Capacitance can be restricted, be caused
Inhibit the ability of peak voltage also restrained.
As a result, in some switch power supply topological structures, according to the advantage of size of devices and layout, it may be considered that go power down
Resistance, and use capacitor as Lossless Snubber circuit, such as boosting (Boost) switching power circuit.Fig. 6 is Boost Switching Power Supply
Circuit diagram.Referring to FIG. 6, Boost Switching Power Supply includes input terminal Vi and output end vo, it is attempted by the filter of input terminal Vi
Power inductance is connected between the anode of wave capacitor C1 and switching device Q1, input terminal Vi and the output head anode of switching device Q1
L1, forward direction is connected with sustained diode 1, switching device between the anode of output end vo and the output head anode of switching device Q1
Between the output end of Q1 and it is connected to Absorption Capacitance Cs, the anode of Absorption Capacitance is connect with the cathode of sustained diode 1, output end
Between Vo and it is connected to bus capacitance Cbus.In switching device Q1 cut-off, diode D1 and Absorption Capacitance Cs constitute absorbing circuit.
The working principle of Boost Switching Power Supply is as follows: Fig. 7 is electric current of the Boost Switching Power Supply when switching device is connected
Circuit diagram.Referring to FIG. 7, the electric current of power inductance L1 passes through the output of switching device Q1 when switching device Q1 conducting
Rectify pole and cathode returns to the negative terminal of filter capacitor C1, to store energy for power inductance L1.At this point, absorbing circuit is disconnected back
Road.
Fig. 8 is charge current loop schematic diagram of the Boost Switching Power Supply when switching device disconnects.Please refer to Fig. 8 and figure
9, when switching device Q1 cut-off, the disconnection access of switching device Q1, sustained diode 1 and Absorption Capacitance Cs composition charge back
Road, wherein solid arrow direction is the current direction of charge circuit, and the electric current i of power inductance L1 is through sustained diode 1, absorption
The negative terminal that capacitor Cs returns to input terminal Vi forms conducting circuit.When switching device Q1 ends at this time equivalent parasitic inductance and/or
The peak voltage energy that power inductance L1 is generated is absorbed capacitor Cs charging and absorbs, so that the both ends switching device Q1 be inhibited to generate
Peak voltage.Sustained diode 1 and bus capacitance Cbus constitute loop of power circuit simultaneously, referring to FIG. 8, power inductance L1 passes through
It charges after the diode D1 change of current to bus capacitance Cbus.It follows that sustained diode 1 is returned in absorption circuit and power
It is shared in road, it is therefore desirable to have the characteristics such as preferable reverse recovery characteristic and lower junction voltage, to guarantee circuit
Performance And Reliability, particularly, such circuitry usage need to guarantee that switching device Q1 and diode D1 need in topology layout
That leans on is closer, and device encapsulation bring parasitic inductance wants necessary small, otherwise can not realize Lossless Snubber with this circuit.
Fig. 9 is current loop schematic diagram of the Boost Switching Power Supply Absorption Capacitance in electric discharge.Referring to FIG. 9, because absorbing electricity
The connection type for holding Cs and bus capacitance Cbus constitutes charging and discharging circuit, when the peak voltage energy that Absorption Capacitance is obtained due to charging
When amount makes the voltage VCs at its both ends be greater than the voltage VCbus at the both ends bus capacitance Cbus, i.e. when VCs > VCbus, Absorption Capacitance Cs
Electric discharge charges to bus capacitance Cbus, arrow direction as dashed lines.
Above-mentioned lossless absorption circuit, what the charging and discharging of Absorption Capacitance were carried out when switching device disconnects simultaneously,
Because of referred to herein as lossless synchronous absorbing circuit.
But it should be noted that, and not all switching device can be absorbed using lossless synchronous absorbing circuit, as
It is defined by lossless synchronous absorbing circuit it is found that it has to apply the electricity Absorption Capacitance can discharge when switching device disconnects
Lu Zhong.So if appearing in when switching device disconnects, Absorption Capacitance can not discharge, and at this moment cannot use lossless synchronous suction
Circuit is received to inhibit the due to voltage spikes of switching device, it is necessary to consider to replace other circuits or measure solve just can be with
?.
Referring to FIG. 10, traditional NPC tri-level circuit includes first switch device Q1, second switch device Q2, third
Switching device Q3, the 4th switching device Q4, the first clamp diode D1, the second clamp diode D2, the first bus capacitance
CbusP, the second bus capacitance CbusN, main power inductance L1 and first capacitor C1.Switching device Q1 to Q4 is insulated gate bipolar
Transistor (IGBT), control terminal (i.e. grid) are controlled by external pulse driving signal, 1 table of on-state of switching device
Show, off-state is indicated with 0.The first switch device Q1, second switch device Q2, third switching device Q3, the 4th switch
It connects after the output end concatenation of device Q4 with the first bus capacitance CbusP and the second bus capacitance CbusN, first clamper two
Pole pipe D1 Opposite direction connection in the common intersection of first switch device Q1 and second switch device Q2 and the first bus capacitance CbusP and
The common intersection of second bus capacitance CbusN, the second clamp diode D2 forward direction are connected to third switching device Q3 and
The common intersection of the common intersection of four switching device Q4 and the first bus capacitance CbusP and the second bus capacitance CbusN；Second opens
The common intersection for closing device Q2 and third switching device Q3 is connected to the first bus by main power inductance L1 and first capacitor C1
The common intersection of capacitor CbusP and the second bus capacitance CbusN.The NPC tri-level circuit, it is equal at the both ends of each switching device
The technical issues of there are peak voltages, therefore the peak voltage how to inhibit is those skilled in the art's urgent need to resolve.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the above deficiency, provide a kind of lossless asynchronous suction of peak voltage
Circuit and NPC tri-level circuit are received, with the peak voltage and Lossless Snubber peak voltage energy for inhibiting switching device to generate.
In order to solve the above technical problem, the present invention provides a kind of lossless asynchronous absorption circuits of peak voltage, including with open
Close the second diode, bus capacitance, third diode and the Absorption Capacitance of devices in series, the switching device and the second diode
Anode common intersection and Absorption Capacitance and third diode cathode common intersection between Opposite direction connection have the one or two pole
Pipe, connecting or disconnecting for the switching device are controlled by pulse drive signal；
When switching device disconnects, the first diode, Absorption Capacitance constitute charge circuit, for keeping Absorption Capacitance logical
It crosses first diode and absorbs the peak voltage energy that switching device is generated when disconnecting；
When switching device is connected, the Absorption Capacitance, switching device, the second diode, bus capacitance and the three or two pole
Pipe constitutes unidirected discharge circuit, for making Absorption Capacitance pass through switching device, the second diode and third diode pair bus electricity
Hold and carries out unidirected discharge, so that in the voltage energy feedback to bus capacitance of Absorption Capacitance, to realize the lossless suction of voltage energy
It receives.
Further, the lossless asynchronous absorption circuit of peak voltage provided by the invention, the charge circuit and/or unidirectionally puts
Electrical circuit is in series with resistance, inductance and/or switching device.
Further, the lossless asynchronous absorption circuit of peak voltage provided by the invention, the switching device are junction type field effect
Answer transistor, bipolar junction transistor, insulated gate bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor, V-groove field
One or more of effect transistor, diode, transformer, thyristor and photoelectrical coupler.
Further, the lossless asynchronous absorption circuit of peak voltage provided by the invention, the charge circuit and described unidirectional
At least one diode in discharge loop uses junction field effect transistor, bipolar junction transistor, insulated gate bipolar crystal
Pipe, Metal Oxide Semiconductor Field Effect Transistor or V-groove field effect transistor substitution, when substitution charge circuit at least
When one diode, the junction field effect transistor, bipolar junction transistor, insulated gate bipolar transistor, metal oxide
The conducting direction of semiconductor field effect transistor or V-groove field effect transistor is identical as the current direction of charge circuit；When replacing
When at least one diode in unidirected discharge circuit, the junction field effect transistor, bipolar junction transistor, insulated gate are double
The conducting direction of bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor or V-groove field effect transistor with unidirectionally put
The current direction of electrical circuit is identical.
Further, the lossless asynchronous absorption circuit of peak voltage provided by the invention, the insulated gate bipolar transistor
Or Metal Oxide Semiconductor Field Effect Transistor is integrated with diode.
Further, the lossless asynchronous absorption circuit of peak voltage provided by the invention, the charge circuit and described unidirectional
At least one diode in discharge loop is using the insulated gate bipolar transistor or metal oxide half for being integrated with diode
When conductor field effect transistor substitutes, insulated gate bipolar transistor or Metal Oxide Semiconductor Field Effect Transistor are being used
On state characteristic when, the conducting direction and charging of insulated gate bipolar transistor or Metal Oxide Semiconductor Field Effect Transistor
The current direction in circuit or unidirected discharge circuit is identical；When using the one-way conduction characteristic of diode, insulated gate bipolar
The conducting direction and charge circuit or list of the diode integrated in transistor or Metal Oxide Semiconductor Field Effect Transistor
Current direction to discharge loop is identical.
Further, the lossless asynchronous absorption circuit of peak voltage provided by the invention, in the unidirected discharge circuit extremely
More diodes are substituted using resistance or inductance.
In order to solve the above-mentioned technical problem, the present invention also provides a kind of NPC tri-level circuit, including first switch device,
Second switch device, third switching device, the 4th switching device, the first clamp diode, the second clamp diode, the first bus
Capacitor, the second bus capacitance, main power inductance and first capacitor, the control terminal of each switching device are believed by pulsed drive
Number control, the first switch device, second switch device, third switching device, the 4th switching device output end concatenation after
It connects with the first bus capacitance and the second bus capacitance, the first clamp diode Opposite direction connection is in first switch device and
Between the common intersection of two switching devices and the first bus capacitance and the common intersection of the second bus capacitance, second clamper two
Pole pipe forward direction is connected to the common intersection and the first bus capacitance and the second bus electricity of third switching device and the 4th switching device
Between the common intersection of appearance, the common intersection of the second switch device and third switching device passes through main power inductance and first
Capacitor is connect with the common intersection of the first bus capacitance and the second bus capacitance, further includes being attempted by the 4th switching device and second
Between the common intersection and first switch device and the common intersection of second switch device of bus capacitance by the 6th diode and
The concatenation branch that second Absorption Capacitance is constituted, the anode of the 6th diode are connected to the 4th switching device and the second bus electricity
The common intersection and second switch device and third derailing switch of the common intersection of appearance, the 6th diode and the second bus capacitance
Forward direction is connected with the second diode between the common intersection of part；When second switch device disconnects, the second diode and second is inhaled
It receives capacitor and constitutes charge circuit, for making the second Absorption Capacitance pass through the production when disconnecting of the second diode absorption second switch device
Raw peak voltage energy；When second switch device is connected with third switching device, second Absorption Capacitance, second switch
Device, third switching device, the second clamp diode, the second bus capacitance and the 6th diode constitute unidirected discharge circuit, use
In making the second Absorption Capacitance pass through second switch device, third switching device, the second clamp diode and the 6th diode pair the
Two lines bus capacitor carries out unidirected discharge, so that in the voltage energy feedback to the second bus capacitance of the second Absorption Capacitance, to realize
The Lossless Snubber of voltage energy.
The lossless asynchronous absorption circuit of peak voltage provided by the invention and NPC tri-level circuit, when switching device disconnects,
The peak voltage energy of generation is Absorption Capacitance charging by charge circuit, and when switching device is connected, unidirected discharge circuit makes
In the peak voltage energy back to bus capacitance that Absorption Capacitance absorbs.That is the charging process of Absorption Capacitance is disconnected in switching device
It is carried out when opening, and the discharge process of Absorption Capacitance is carried out when switching device is connected, because referred to herein as peak voltage is lossless
Asynchronous absorption circuit.
When switching device disconnects, charge circuit is constituted by first diode and Absorption Capacitance, for inhaling Absorption Capacitance
Receive the peak voltage energy that switching device is generated when disconnecting.Compared with prior art, the current direction of charge circuit is single
To, when switching device disconnects, the parasitic inductance of switching device and main power inductance cannot be dashed forward due to inductance both ends electric current
The characteristic of change, electric current charge to Absorption Capacitance, to absorb the peak voltage energy that switching device is generated when disconnecting, thus
The voltage value for effectively inhibiting peak voltage energy prevents higher peak voltage damage switching device.
When switching device is connected, Absorption Capacitance, switching device, the second diode, bus capacitance, third diode and structure
At unidirected discharge circuit, for make Absorption Capacitance by switching device, the second diode and third diode pair bus capacitance into
Row unidirected discharge, bus capacitance charging, so as to realize voltage energy in the voltage energy feedback to bus capacitance of Absorption Capacitance
Lossless Snubber.Due to the one-way conduction characteristic of the diode in unidirected discharge circuit, then absorbed when the voltage of bus capacitance is greater than
When the voltage of capacitor, the second diode and third diode clamp are disconnected backward channel of the bus capacitance to Absorption Capacitance, because
This bus capacitance is unable to back discharge to Absorption Capacitance, reverse charging cannot be carried out to Absorption Capacitance, to guarantee Absorption Capacitance
Voltage it is not too high, will limit in bus capacitor voltage value attachment, so that Absorption Capacitance be made to have enough stored energy capacitances to go to inhale
Receive the peak voltage energy generated when switching device disconnects.
Since the present invention is Lossless Snubber, so there is no limit in selection of the charge circuit to Absorption Capacitance capacitance size,
Capacitance selection is bigger, stronger to the rejection ability of the peak voltage of switching device, to effectively solve the problems, such as peak voltage.Again
Secondary, absorbing circuit of the invention carries out independent design for single switch device, therefore can break through between each component
The limitation of required compact layout wiring makes each switching device layout more flexible, is more advantageous to the diversified design of product layout.
Detailed description of the invention
Fig. 1 is the simplified basic diagram of switching device output loop；
Fig. 2 is the schematic diagram of switching device output loop parasitic inductance equivalent circuit；
Fig. 3 is the schematic diagram of the output end parallel connection absorbing circuit of switching device；
Fig. 4 is current loop signal of the switching device output loop parasitic inductance equivalent circuit when switching device is connected
Figure；
Fig. 5 is current loop signal of the switching device output loop parasitic inductance equivalent circuit when switching device disconnects
Figure；
Fig. 6 is the schematic diagram of Boost switching power circuit；
Fig. 7 is current loop schematic diagram of the Boost Switching Power Supply when switching device is connected；
Fig. 8 is charge current loop schematic diagram of the Boost Switching Power Supply when switching device disconnects；
Fig. 9 is discharge current circuit diagram of the Boost Switching Power Supply when switching device disconnects；
Figure 10 is the schematic diagram of traditional NPC tri-level circuit；
Figure 11 is the schematic diagram of the lossless asynchronous absorption circuit of peak voltage of the embodiment of the present invention；
Figure 12 is the charge circuit schematic diagram of the absorbing circuit of the embodiment of the present invention；
Figure 13 is the discharge loop schematic diagram of the absorbing circuit of the embodiment of the present invention；
Figure 14 to Figure 19 is the flexible circuit schematic diagram of the lossless asynchronous absorption circuit of peak voltage of the embodiment of the present invention；
Figure 20 is the principle of the NPC tri-level circuit with the lossless asynchronous absorption circuit of peak voltage of the embodiment of the present invention
Figure；
Figure 21 is the discrete schematic diagram of the lossless asynchronous absorption circuit of peak voltage of second switch device in Figure 20；
Figure 22 is the charge circuit schematic diagram of the lossless asynchronous absorption circuit of peak voltage of Figure 21；
Figure 23 is the unidirected discharge circuit diagram of the lossless asynchronous absorption circuit of peak voltage of Figure 21.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing, to illustrate the point for how inhibiting switching device to generate when disconnecting
Peak voltage simultaneously realizes Lossless Snubber.
Embodiment one
Please refer to Figure 11, the embodiment of the present invention one provides a kind of lossless asynchronous absorption circuit of peak voltage, including with switch
The concatenated second diode Ds2 of device Q1, bus capacitance Cbus, third diode Ds3 and Absorption Capacitance Cs1, the derailing switch
The public friendship of the cathode of the common intersection and Absorption Capacitance Cs1 and third diode Ds3 of the anode of part Q1 and the second diode Ds2
Opposite direction connection has first diode Ds1 between point, and the connecting or disconnecting for switching device Q1 is controlled by pulse drive signal.
Figure 11 is please referred to, the switching device Q1 of the embodiment of the present invention one can be with field effect transistor.Its specific connection relationship
It is as follows: switching device Q1, the second diode Ds2, bus capacitance Cbus, third diode Ds3 and Absorption Capacitance Cs1 series connection.Its
In the anode of the second diode Ds2 connect with the source electrode of switching device Q1, the company of third diode Ds3 and the second diode Ds2
It is identical to connect direction.It further include the common intersection and third diode Ds3 for being reversely attempted by switching device Q1 and the second diode Ds2
First diode Ds1 between the common intersection of Absorption Capacitance Cs1.Figure 12 is please referred to, it is described when switching device Q1 is disconnected
First diode Ds1, Absorption Capacitance Cs1 constitute charge circuit, for absorbing Absorption Capacitance Cs1 by first diode Ds1
The peak voltage energy that switching device Q1 is generated when disconnecting.The current direction of charge circuit in the embodiment of the present invention one is single
To, when switching device Q1 is disconnected, the parasitic inductance of switching device Q1 and main power inductance due to inductance both ends electric current not
The characteristic that can be mutated, electric current charge to Absorption Capacitance Cs1, to absorb peak voltage energy of the switching device Q1 when disconnecting
Amount prevents higher peak voltage damage switching device Q1 to effectively inhibit the voltage value of peak voltage energy.
Figure 13 is please referred to, when switching device Q1 is connected, the Absorption Capacitance Cs1, switching device Q1, the second diode
Ds2, bus capacitance Cbus and third diode Ds3 constitute unidirected discharge circuit, for making Absorption Capacitance Cs1 pass through switching device
Q1, the second diode Ds2 and third diode Ds3 carry out unidirected discharge to bus capacitance Cbus, so that the electricity of Absorption Capacitance Cs1
It presses in energy back to bus capacitance Cbus, realizes the Lossless Snubber of voltage energy.When the voltage at the both ends Absorption Capacitance Cs1 is greater than
When the voltage at the both ends bus capacitance Cbus, i.e. when VCs1 > VCbus, the second diode Ds2, third diode Ds3 conducting absorb
Capacitor Cs1 by the second diode Ds2, third diode Ds3 and the switching device Q1 of forward conduction to bus capacitance Cbus into
Row unidirected discharge, bus capacitance Cbus charging, so that in the voltage energy feedback to bus capacitance Cbus of Absorption Capacitance Cs1, it is real
The Lossless Snubber of existing voltage energy, while reducing the voltage energy of Absorption Capacitance.Due to the diode in unidirected discharge circuit
One-way conduction characteristic, then when the voltage of Absorption Capacitance Cs1 is less than the voltage at the both ends bus capacitance Cbus, i.e. VCs1 < VCbus
When, the second diode Ds2 and third diode Ds3 end, and are disconnected the back discharge of bus capacitance Cbus to Absorption Capacitance Cs1
Access, therefore bus capacitance Cbus is unable to back discharge to Absorption Capacitance Cs1 to carry out reverse charging to it, to guarantee to absorb
Capacitor Cs1 has enough stored energy capacitances to go to absorb peak voltage energy when switching device Q1 is disconnected, and avoids conventional suction electricity
Absorption Capacitance in road is in the oscillatory regime phenomenon of Bidirectional charging-discharging.In the embodiment of the present invention one, in VCs ≠ VCbus, inhale
A possibility that receiving the Bidirectional charging-discharging oscillatory occurences that capacitor Cs1 and bus capacitance Cbus is not present overcomes since oscillation generates
Energy loss, improve the service life of capacitor element.
The upper end of switching device Q1 is anode in Figure 11, and lower end is cathode, and switching device Q1's connects or disconnects by arteries and veins
Rush driving signal control.
In the lossless asynchronous absorption circuit of peak voltage that the embodiment of the present invention one provides, when switching device Q1 is disconnected, fill
Electrical circuit is Absorption Capacitance Cs1 charging, and when switching device Q1 is connected, unidirected discharge circuit makes the point of Absorption Capacitance Cs1 absorption
Peak voltage energy feedback on bus capacitance Cbus, i.e. the charging process of Absorption Capacitance Cs1 be when switching device Q1 is disconnected into
Capable, and the discharge process of Absorption Capacitance Cs1 is carried out when switching device Q1 is connected, because referred to herein as peak voltage is lossless different
Walk absorbing circuit.
Switching device Q1 in the embodiment of the present invention one can be can be technotron (JFET), bipolar transistor
Manage (BJT), insulated gate bipolar transistor (IGBT), Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or V-type
Slot field-effect tube (Vertical Metal Oxide Semiconductor, VMOS), diode, transformer, thyristor and light
One or more of electric coupler.Can be one in above-mentioned switching device, be also possible to above-mentioned switching device two or more
Combination, such as two junction field effect transistors are combined through series connection.Switching device Q1 in the embodiment of the present invention one is junction type field effect
(JFET), bipolar junction transistor (BJT), insulated gate bipolar transistor (IGBT), metal oxide semiconductor field-effect should be managed
Transistor (MOSFET) or when V-groove field-effect tube (Vertical Metal Oxide Semiconductor, VMOS),
Substrate can be silicon, be also possible to germanium, the even similar substrates such as gallium nitride.It can also be in insulated gate bipolar transistor, gold
Belong between the hourglass source electrode of oxide semiconductor field effect transistor or is reversely integrated with diode between collector and emitter.
Insulated gate bipolar transistor, the base stage of Metal Oxide Semiconductor Field Effect Transistor or grid are believed by pulsed drive at this time
Number control so that insulated gate bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor connect or disconnect.Work as switch
Device is technotron (JFET), bipolar junction transistor (BJT), insulated gate bipolar transistor (IGBT), metal aoxidize
Object semiconductor field effect transistor (MOSFET) or V-groove field-effect tube (Vertical Metal Oxide
Semiconductor, VMOS) when, conducting is the on-state of switching device, and cut-off is the off-state of switching device.
It is illustrated by taking Metal Oxide Semiconductor Field Effect Transistor as an example.I.e. in metal oxide semiconductor field-effect
The cathode of the drain electrode connection integrated diode of transistor, the source electrode connection integrated two of Metal Oxide Semiconductor Field Effect Transistor
The anode of pole pipe.When select the Metal Oxide Semiconductor Field Effect Transistor of not integrated diode as switching device Q1
When, reversely and a diode can be connect between the output end of Metal Oxide Semiconductor Field Effect Transistor.That is, band
There is the Metal Oxide Semiconductor Field Effect Transistor of integrated diode to can be the semiconductor devices of integral structure, is also possible to
Two discrete semiconductor devices are formed by connecting by conducting wire.When switching device Q1 is aoxidized using the metal of reversed integrated diode
When object semiconductor field effect transistor, interlock circuit can not be separately provided reversed in printed circuit board (PCB) placement-and-routing
The position distribution and conducting wire of integrated diode connect, and therefore, have allocation wiring structure simple, reduce device number and reduce weldering
Connect the effect of technique.When switching device Q1 is Metal Oxide Semiconductor Field Effect Transistor, it is therefore an objective to realize and connect or break
The switching characteristic opened, therefore, as long as having the Metal Oxide Semiconductor Field Effect Transistor of switching characteristic, such as will be golden
The grid and source lead belonged in oxide semiconductor field effect transistor is shorted, and uses the switching characteristic of diode as switch
Device Q1.Diode for example is used using the Metal Oxide Semiconductor Field Effect Transistor of above-mentioned reversed integrated diode again
The characteristic of one-way conduction is used as switch.The Metal Oxide Semiconductor Field Effect Transistor of integrated diode be on the one hand for
The one-way conduction characteristic using diode may be needed, is on the other hand to cover more device moulding.Switching device
Q1 is when being reversely integrated with the Metal Oxide Semiconductor Field Effect Transistor of diode, can there are two conducting direction, according to
Which direction conducting current direction selects, referring to FIG. 10, partly being led when switching device Q1 is connected downwards using metal oxide
The on state characteristic of body field effect transistor.When switching device Q1 is connected upwards, unidirectionally leading for reversely integrated diode is used
Logical characteristic.
Resistance, inductance and/or such as two can be in series with as a kind of deformation, in the charge circuit of the embodiment of the present invention one
Pole pipe, junction field effect transistor, bipolar junction transistor, insulated gate bipolar transistor, metal oxide semiconductor field-effect
The switching devices such as transistor, V-groove field effect transistor.Each in charge circuit, the positional relationship distribution between each device is as far as possible
It is arranged close to, to reduce the generation of parasitic inductance.
It alternatively deforms, the unidirected discharge circuit in the embodiment of the present invention one can also be in series with resistance, inductance
And/or switching device.In unidirected discharge circuit, the positional relationship distribution between each device is unaffected, can not seek refuge with
Nearly setting.
Above-mentioned deformation can be carried out individually, can also mix progress, the purpose is to realize the spike to the embodiment of the present invention
The lossless asynchronous absorption circuit of voltage is expanded and supplement.
As preferable embodiment, the lossless asynchronous absorption circuit of peak voltage that the embodiment of the present invention one provides is described
Absorption Capacitance Cs1 is noninductive capacitor.The diode is noninductive diode.Wherein, noninductive capacitor refers to capacitor without pin or draws
Foot is shorter.Wherein noninductive diode refers to that diode is shorter without pin or pin.Noninductive capacitor or noninductive diode are set
It sets, is to reduce peak voltage energy to reduce the parasitic inductance in current loop.
Embodiment two
Figure 14 to Figure 17 is please referred to, second is that improving on the basis of example 1, region exists the embodiment of the present invention
In, at least one diode in the charge circuit and the unidirected discharge circuit using junction field effect transistor, bipolar
Transistor npn npn, insulated gate bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor or V-groove field effect transistor replace
Generation, when substituting at least one diode in charge circuit, the junction field effect transistor, bipolar junction transistor, insulation
The conducting direction of grid bipolar junction transistor, Metal Oxide Semiconductor Field Effect Transistor or V-groove field effect transistor with fill
The current direction of electrical circuit is identical；When substituting at least one diode in unidirected discharge circuit, the junction field is brilliant
Body pipe, bipolar junction transistor, insulated gate bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor or V-groove field effect
Answer the conducting direction of transistor identical as the current direction in unidirected discharge circuit.
Wherein the insulated gate bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor are integrated with diode.
At least one diode in the charge circuit and the unidirected discharge circuit is using the insulated gate bipolar for being integrated with diode
When transistor npn npn or Metal Oxide Semiconductor Field Effect Transistor substitute, insulated gate bipolar transistor or metal oxygen are being used
When the on state characteristic of compound semiconductor field effect transistor, insulated gate bipolar transistor or metal oxide semiconductor field-effect
The conducting direction of transistor is identical as the current direction of charge circuit or unidirected discharge circuit；In unidirectionally leading using diode
When logical characteristic, the conducting of the diode integrated in insulated gate bipolar transistor or Metal Oxide Semiconductor Field Effect Transistor
Direction is identical as the current direction of charge circuit or unidirected discharge circuit.
Figure 14 is that the first diode Ds1 in embodiment one is brilliant using the first insulated gate bipolar for being integrated with diode
Body pipe or Metal Oxide Semiconductor Field Effect Transistor Qs1 substitution.When the first insulated gate bipolar for being integrated with diode is brilliant
When body pipe, Metal Oxide Semiconductor Field Effect Transistor Qs1 use the one-way conduction characteristic of diode, the first insulated gate bipolar
The conducting direction of diode and the electric current side of charge circuit in transistor npn npn, Metal Oxide Semiconductor Field Effect Transistor Qs1
To identical.First insulated gate bipolar transistor, the base stage of Metal Oxide Semiconductor Field Effect Transistor Qs1 or grid at this time
Extremely can be hanging or connect low level.Figure 15 and Figure 16 is by the second diode Ds2 and third diode Ds3 in embodiment one
In a diode substitution.For example, by using be integrated with the insulated gate bipolar transistor of diode, metal oxide is partly led
Body field effect transistor Qs2 substitutes the second diode Ds2.Wherein the difference of Figure 15 and Figure 16 is the change in the connection direction of Qs2
Change, i.e. Qs2 in Figure 15 has used the switch of insulated gate bipolar transistor or Metal Oxide Semiconductor Field Effect Transistor
Principle is connected in characteristic.Qs2 in Figure 16 has used the on state characteristic of diode.
Figure 17 is by the diode replacing whole in unidirected discharge circuit.That is the second diode Ds2 is used and is integrated with diode
The second insulated gate bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor Qs2 substitution, third diode Ds3 adopts
With insulated gate bipolar transistor, the Metal Oxide Semiconductor Field Effect Transistor Qs3 substitution for being integrated with diode.At this time
Third insulated gate bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor Qs3 are special using diode unilateral conduction
Property or insulated gate bipolar transistor, Metal Oxide Semiconductor Field Effect Transistor on state characteristic when, with first insulation
Grid bipolar junction transistor, the principle of Metal Oxide Semiconductor Field Effect Transistor Qs1 are identical, i.e. unidirectionally leading using diode
When logical characteristic, the conducting direction of diode is identical as the current direction in unidirected discharge circuit, using insulated gate bipolar transistor,
When the conduction characteristic of Metal Oxide Semiconductor Field Effect Transistor, the current direction phase of conducting direction and unidirected discharge circuit
Together.
Embodiment three
Figure 18 and Figure 19 are please referred to, the lossless asynchronous absorption circuit of peak voltage that the embodiment of the present invention three provides is to implement
It is improved on the basis of example one, difference is, the second diode Ds2 or third diode in unidirected discharge circuit
Ds3 is substituted using resistance or inductance.Figure 18 is to substitute the second diode Ds2 in unidirected discharge circuit using inductance L1
Scheme.At this point, inductance L1 has the function of connection and energy storage, it is used to form discharge current circuit.Figure 19 is to return unidirected discharge
Third diode Ds3 in road uses the scheme of resistance R1 substitution.At this point, resistance R1 has the function of connection, it is used to form and puts
Electric current loop.
Example IV
Please refer to Figure 20, the embodiment of the present invention four provides NPC tri-level circuit, including first switch device Q1, second opens
Close device Q2, third switching device Q3, the 4th switching device Q4, the first clamp diode D1, the second clamp diode D2, first
Bus capacitance CbusP, the second bus capacitance CbusN, main power inductance L1 and first capacitor C1, described switching device Q1, Q2, Q3
Controlled with the control terminal of Q4 by pulse drive signal, first switch device Q1, second switch device Q2, third switching device Q3,
It connects after the output end concatenation of 4th switching device Q4 with the first bus capacitance CbusP and the second bus capacitance CbusN, described the
One clamp diode D1 Opposite direction connection is in the common intersection of first switch device Q1 and second switch device Q2 and the first bus electricity
Hold between CbusP and the common intersection of the second bus capacitance CbusN, the second clamp diode D2 forward direction is connected to third and opens
Close the common intersection of device Q3 and the 4th switching device Q4 and the public affairs of the first bus capacitance CbusP and the second bus capacitance CbusN
Altogether between intersection point, the common intersection of the second switch device Q2 and third switching device Q3 pass through main power inductance L1 and first
Capacitor C1 is connect with the common intersection of the first bus capacitance CbusP and the second bus capacitance CbusN；It further include being attempted by the 4th to open
Close the common intersection of device Q4 and the second bus capacitance CbusN and the public friendship of first switch device Q1 and second switch device Q2
The concatenation branch being made of the 6th diode Ds6 and the second Absorption Capacitance Cs2 between point, the sun of the 6th diode Ds6
Pole is connected to the common intersection of the 4th switching device Q4 and the second bus capacitance CbusN, and the 6th diode Ds6 and second is total
Forward direction is connected between the common intersection and second switch device Q2 of line capacitance CbusN and the common intersection of third switching device Q3
Second diode Ds2.
Figure 20 and Figure 21 are please referred to, for second switch device Q2, the lossless asynchronous absorption circuit packet of peak voltage
It includes and the concatenated third switching device Q3 of second switch device Q2, the second clamp diode D2, the second bus capacitance CbusN,
Six diode Ds6, the second Absorption Capacitance Cs2, and it is connected to the public friendship of second switch device Q2 and third switching device Q3
Second diode Ds2 of Opposite direction connection between point and the 6th diode Ds6 and the common intersection of the second Absorption Capacitance Cs2.
Basic model spike electricity in the lossless asynchronous absorption circuit of peak voltage and embodiment one in the embodiment of the present invention four
Press the equivalent relation of lossless asynchronous absorption circuit as follows:
Concatenated Q3 and D2 is equivalent to Ds2 in Figure 11 in Figure 21, and the Ds6 in Figure 21 is equivalent to the Ds3 in Figure 11, Figure 21's
Ds2 is equivalent to the Ds1 in Figure 11.That is, can be according to physical circuit knot for the series equivalent relationship of the Ds2 in Figure 11
The adjustment of structure progress adaptability.
Figure 22 is please referred to, when second switch device Q2 is disconnected, the second diode Ds2 and the second Absorption Capacitance Cs2 are constituted
Charge circuit, for making the second Absorption Capacitance Cs2 absorb second switch device Q2 generation when disconnecting by the second diode Ds2
Peak voltage energy.
Figure 23 is please referred to, when second switch device Q2 is connected with third switching device Q3, second Absorption Capacitance
Cs2, second switch device Q2, third switching device Q3, the second clamp diode D2, the second bus capacitance CbusN and the six or two
Pole pipe Ds6 constitutes unidirected discharge circuit, for making the second Absorption Capacitance Cs2 pass through second switch device Q2, third switching device
Q3, the second clamp diode D2 and the 6th diode Ds6 carry out unidirected discharge to the second bus capacitance CbusN, so that second inhales
It receives in the voltage energy feedback to the second bus capacitance CbusN of capacitor Cs2, to realize the Lossless Snubber of voltage energy；It is described to fill
Electrical circuit and unidirected discharge circuit constitute the lossless asynchronous absorption circuit of peak voltage.
The NPC tri-level circuit that the embodiment of the present invention four provides is suitable for the lossless of the peak voltage of second switch device Q2
It absorbs.
Bus capacitance Cbus in the embodiment of the present invention, also referred to as bus capacitor Cbus, including input terminal type and output end
Type.Input terminal type, which refers to, is attempted by input terminal, and output end type, which refers to, is attempted by output end.
The embodiment of the present invention is mainly for bridge-arm tube.Wherein bridge-arm tube refers to such a closed loop if it exists, it is only
Exist by only at least forming there are two switching device and at least one voltage source, then in this loop structure, wherein
Switching device be known as bridge-arm tube.Referring to FIG. 6, switching device Q1 passes through diode D1 and bus capacitance Cbus (bus electricity
Hold Cbus is in the nature voltage source) connection forms a closed loop, and this loop is only by two switching devices (Q1 and D1) and one
Voltage source (Cbus) composition meets the definition of bridge arm tubing loop and requires, so Q1 and D1 belong to bridge-arm tube；Similarly please refer to figure
11, it is also the absorbing circuit that is previously mentioned of the present invention, switching device Q1 passes through first diode Ds1, the second diode Ds2, the
Three diode Ds3 are connect with bus capacitance Cbus (bus capacitance Cbus's is in the nature voltage source) forms a loop, also meets
The definition of bridge arm tubing loop requires.So these pipes (Q1, Ds1, Ds2 and Ds3) also belong to bridge-arm tube.
The present invention is not limited to above-mentioned specific embodiment, all made various changes within protection scope of the present invention
And retouching, it is within the scope of the present invention.
Claims (8)
1. a kind of lossless asynchronous absorption circuit of peak voltage, which is characterized in that including with concatenated second diode of switching device,
The common intersection and absorption of the anode of bus capacitance, third diode and Absorption Capacitance, the switching device and the second diode
Opposite direction connection has a first diode between the common intersection of the cathode of capacitor and third diode, the connection of the switching device or
Person disconnects and being controlled by pulse drive signal；
When switching device disconnects, the first diode, Absorption Capacitance constitute charge circuit, for making Absorption Capacitance by the
The peak voltage energy that one diode absorption switching device is generated when disconnecting；
When switching device is connected, the Absorption Capacitance, switching device, the second diode, bus capacitance and third diode structure
At unidirected discharge circuit, for make Absorption Capacitance by switching device, the second diode and third diode pair bus capacitance into
Row unidirected discharge, so that in the voltage energy feedback to bus capacitance of Absorption Capacitance, to realize the Lossless Snubber of voltage energy.
2. the lossless asynchronous absorption circuit of peak voltage as described in claim 1, which is characterized in that the charge circuit and/or
Unidirected discharge circuit in series has resistance, inductance and/or switching device.
3. the lossless asynchronous absorption circuit of peak voltage as claimed in claim 1 or 2, which is characterized in that the switching device is
Junction field effect transistor, bipolar junction transistor, insulated gate bipolar transistor, metal oxide semiconductor field effect transistor
Pipe, V-groove field effect transistor, diode, transformer, thyristor or photoelectrical coupler.
4. the lossless asynchronous absorption circuit of peak voltage as described in claim 1, which is characterized in that the charge circuit and described
At least one diode in unidirected discharge circuit uses junction field effect transistor, bipolar junction transistor, insulated gate bipolar
Transistor, Metal Oxide Semiconductor Field Effect Transistor or V-groove field effect transistor substitution, when in substitution charge circuit
When at least one diode, the junction field effect transistor, bipolar junction transistor, insulated gate bipolar transistor, metal oxygen
The conducting direction of compound semiconductor field effect transistor or V-groove field effect transistor is identical as the current direction of charge circuit；
When substituting at least one diode in unidirected discharge circuit, the junction field effect transistor, bipolar junction transistor, insulation
The conducting direction and list of grid bipolar junction transistor, Metal Oxide Semiconductor Field Effect Transistor or V-groove field effect transistor
Current direction to discharge loop is identical.
5. the lossless asynchronous absorption circuit of peak voltage as claimed in claim 4, which is characterized in that the insulated gate bipolar is brilliant
Body pipe or Metal Oxide Semiconductor Field Effect Transistor are integrated with diode.
6. the lossless asynchronous absorption circuit of peak voltage as claimed in claim 5, which is characterized in that the charge circuit and described
At least one diode in unidirected discharge circuit is using insulated gate bipolar transistor or the metal oxidation for being integrated with diode
When object semiconductor field effect transistor substitutes, brilliant using insulated gate bipolar transistor or metal oxide semiconductor field-effect
When the on state characteristic of body pipe, the conducting direction of insulated gate bipolar transistor or Metal Oxide Semiconductor Field Effect Transistor with
Charge circuit or the current direction in unidirected discharge circuit are identical；When using the one-way conduction characteristic of diode, insulated gate is double
In bipolar transistor or Metal Oxide Semiconductor Field Effect Transistor integrate diode conducting direction and charge circuit or
The current direction in person's unidirected discharge circuit is identical.
7. the lossless asynchronous absorption circuit of peak voltage as described in claim 1, which is characterized in that in the unidirected discharge circuit
At most diode substituted using resistance or inductance.
8. a kind of NPC tri-level circuit, including first switch device, second switch device, third switching device, the 4th derailing switch
Part, the first clamp diode, the second clamp diode, the first bus capacitance, the second bus capacitance, main power inductance and the first electricity
Hold, the control terminal of each switching device is controlled by pulse drive signal, the first switch device, second switch device
Part, third switching device, the 4th switching device output end concatenation after connect with the first bus capacitance and the second bus capacitance, institute
The first clamp diode Opposite direction connection is stated in the common intersection of first switch device and second switch device and the first bus capacitance
And second bus capacitance common intersection between, the second clamp diode forward direction is connected to third switching device and the 4th and opens
Close device common intersection and the first bus capacitance and the common intersection of the second bus capacitance between, the second switch device and
The common intersection of third switching device passes through main power inductance and first capacitor and the first bus capacitance and the second bus capacitance
Common intersection connection, which is characterized in that further include being attempted by the common intersection of the 4th switching device and the second bus capacitance and the
The concatenation being made of the 6th diode and the second Absorption Capacitance between one switching device and the common intersection of second switch device
Branch, the anode of the 6th diode are connected to the common intersection of the 4th switching device and the second bus capacitance, and the described 6th
It is positive between diode and the common intersection and second switch device and the common intersection of third switching device of the second bus capacitance
It is connected with the second diode；
When second switch device disconnects, the second diode and the second Absorption Capacitance constitute charge circuit, for making the second absorption
The peak voltage energy that capacitor is generated by the second diode absorption second switch device when disconnecting；
When second switch device is connected with third switching device, second Absorption Capacitance, second switch device, third switch
Device, the second clamp diode, the second bus capacitance and the 6th diode constitute unidirected discharge circuit, for keeping the second absorption electric
Hold and is carried out by second switch device, third switching device, the second clamp diode and the 6th the second bus capacitance of diode pair
Unidirected discharge, so that in the voltage energy feedback to the second bus capacitance of the second Absorption Capacitance, to realize the lossless of voltage energy
It absorbs.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112187032A (en) * | 2019-07-04 | 2021-01-05 | 台达电子工业股份有限公司 | Power supply device and operation method thereof |
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