CN109244234B - GaAs-based three-dimensional Hall sensor based on planar process and production process thereof - Google Patents

GaAs-based three-dimensional Hall sensor based on planar process and production process thereof Download PDF

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CN109244234B
CN109244234B CN201810996579.XA CN201810996579A CN109244234B CN 109244234 B CN109244234 B CN 109244234B CN 201810996579 A CN201810996579 A CN 201810996579A CN 109244234 B CN109244234 B CN 109244234B
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董健方
钟智勇
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University of Electronic Science and Technology of China
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Abstract

The GaAs-based three-dimensional Hall sensor based on the planar process comprises a substrate, a buffer transition layer and a first active layer which are sequentially arranged from bottom to top, wherein the first active layer is used for sensing a magnetic field in a direction parallel to the substrate, the substrate is made of semi-insulating GaAs, the buffer transition layer is made of P-type heavily doped GaAs, the first active layer is made of N-type doped GaAs, and the first active layer is provided with a bias input electrode, a grounding electrode and a voltage output electrode. The active region and the substrate are made of GaAs, the size is small, the accuracy of magnetic field sensing can be guaranteed in a wider temperature range (0-200 ℃), and the sensitivity of the magnetic field sensing is higher than that of most existing Si-based or GaAs-based three-dimensional Hall sensors.

Description

GaAs-based three-dimensional Hall sensor based on planar process and production process thereof
Technical Field
The invention relates to the technical field of Hall sensors, in particular to a GaAs-based three-dimensional Hall sensor based on a planar process and a production process thereof.
Background
The magnetic sensor is an indispensable part in many application fields, plays an important role in the fields of consumer electronics, industrial automation, automotive electronics, medical and health systems and the like, is an important branch of the modern sensor industry, and plays an important role in national economic construction and national defense construction. With the continuous development of the technology, the magnetic field sensing technology has been developed from one-dimensional sensing in a single direction to spatial three-dimensional sensing, that is, magnetic fields in three mutually orthogonal directions in a space can be detected simultaneously, so that the size and the direction of the magnetic field in the three-dimensional space can be determined. Three-dimensional magnetic field sensors have a wide range of applications, such as geomagnetic measurement, environmental interference measurement, etc., and are widely used as important sensing elements of electronic compasses in navigation systems, which are important components of some communication systems, such as GPS, mobile phones, etc.
The Hall sensor is an important member of the magnetic sensor, and the three-dimensional magnetic field sensing based on the Hall sensor has many advantages, which are mainly reflected in low cost, high accuracy, large detectable magnetic field range and the like. Most three-dimensional hall sensors are based on silicon, and have the main advantages of low cost and good compatibility with modern semiconductor processes, but the sensitivity of magnetic field sensing is relatively low, and the three-dimensional hall sensors on the silicon substrate generally cannot work normally at some extreme temperatures. With the development of compound semiconductors, the three-dimensional hall sensor with the GaAs as the substrate has higher sensitivity and better temperature characteristics, and the overall performance of the three-dimensional hall sensor is superior to that of the three-dimensional hall sensor with the silicon substrate, but the three-dimensional hall sensor with the GaAs as the substrate mostly adopts the orthogonal assembly of a plurality of hall units, the structure of the three-dimensional hall sensor is respectively shown in fig. 1 and fig. 2, and the assembly structure is large in size, is not a planar process, and is not beneficial to the integration of a system. For example, a pyramid-shaped three-dimensional hall sensor proposed in the patent application with publication number US2017/345997a1, and a three-dimensional hall sensor requiring a double-sided processing process proposed in the patent with publication number CN104181475B are not beneficial to system integration, are relatively complex in process implementation, and are limited by semiconductor process accuracy, so that the spatial resolution and magnetic field measurement accuracy of the magnetic field sensing of the prepared three-dimensional hall sensor are limited to a certain extent.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide the GaAs-based three-dimensional Hall sensor based on the planar process, which has the advantages of small volume, wide working temperature range and high magnetic field sensing accuracy.
In a first aspect, the GaAs-based three-dimensional hall sensor based on a planar process provided in the embodiments of the present invention includes a substrate, a buffer transition layer, and a first active layer, which are sequentially disposed from bottom to top, where the first active layer is used for sensing a magnetic field in a direction parallel to the substrate, the substrate is made of semi-insulating GaAs, the buffer transition layer is made of P-type heavily doped GaAs, the first active layer is made of N-type doped GaAs, and the first active layer is provided with a contact electrode.
Optionally, the contact electrode is comprised of a bias input electrode, a ground electrode, and a voltage output electrode.
Optionally, the magnetic sensor further comprises an isolation buffer layer and a second active layer which are sequentially arranged from bottom to top, wherein the isolation buffer layer is arranged above the first active layer, undoped GaAs is adopted as a material of the isolation buffer layer, the second active layer is used for sensing a magnetic field in a direction perpendicular to the substrate, N-type doped GaAs is adopted as a material of the second active layer, and a bias input electrode, a grounding electrode and a voltage output electrode are arranged at positions corresponding to the second active layer and the first active layer and are correspondingly connected through a contact hole.
Optionally, the bias input electrode is disposed at the midpoint of the first active layer, the isolation buffer layer and the second active layer, and the bias input electrode is square.
Optionally, the second active layer is entirely in a cross-shaped structure, the cross-shaped structure is provided with an offset input electrode at the crossing part, and the horizontal parts of the cross-shaped structure are respectivelyThe vertical part of the cross-shaped structure is of a structure shaped like a Chinese character 'wang', and the width of the bias input electrode is the same as the length of the transverse part of the structure shaped like a Chinese character 'wang'.
Optionally, the ground electrode is disposed at an outer edge of a lateral portion of the "king" shaped structure away from the offset input electrode, and the voltage output electrodes are disposed at both ends of the lateral portion in the middle of the "king" shaped structure.
Optionally, Si is provided on the upper surface of the second active layer3N4Of (3) a passivation layer.
In a second aspect, the production process of the GaAs-based three-dimensional hall sensor based on the planar process provided by the embodiment of the present invention includes:
1) growing a layer of P-type heavily doped GaAs with the thickness of 0.5-1.5 mu m as a buffer transition layer on a semi-insulating GaAs substrate with the crystal orientation of <111> by an epitaxial process;
2) and growing a layer of N-type doped GaAs with the thickness of 5-10 mu m on the surface of the buffer transition layer through an epitaxial process to be used as a first active layer.
Optionally, the production process further comprises:
the production process further comprises:
3) performing square mask processing on the center of the upper surface of the first active layer, and performing boron ion implantation on the upper surface of the first active layer, wherein the boron ion implantation direction is vertical to the substrate and is used for forming a high-resistance isolation region with other devices;
4) growing a layer of undoped GaAs with the thickness of 0.5-1.5 mu m as an isolation buffer layer on the surface of the first active layer subjected to the isolation treatment by an epitaxial process;
5) growing a layer of N-type doped GaAs with the thickness less than or equal to 0.5 mu m on the surface of the isolation buffer layer through an epitaxial process to be used as a second active layer, and then carrying out rapid thermal annealing treatment;
6) on the upper surface of the second active layer for preparing a cross-shaped structure and
Figure BDA0001781984280000031
mask treatment of the cross-shaped structure, wherein an etching process is adopted to etch the GaAs material downwards to a thickness of 0.5 mu m, a cross-shaped structure is prepared, and horizontal parts of the cross-shaped structure are horizontal parts respectively
Figure BDA0001781984280000032
The vertical parts of the cross-shaped structures are of a structure shaped like a Chinese character 'wang';
7) growing a layer of Si with the thickness of 3.5-4.0 mu m on the upper surface of the second active layer prepared in the step 6) through an epitaxial process3N4As a passivation layer;
8) polishing the surface of the passivation layer by adopting a chemical mechanical polishing process to flatten the surface of the passivation layer to obtain the passivation layer with the thickness of 2.0-2.5 mu m;
9) removing the position masks of the bias input electrode, the grounding electrode and the voltage output electrode on the surface of the passivation layer obtained in the step 8) to obtain a mask layer, etching the passivation layer subjected to mask processing by adopting an etching process, wherein the downward etching thickness is 2.0-2.5 mu m, etching GaAs, and etching the electrode contact hole, wherein the downward etching thickness is 0.6-1.6 mu m;
10) on the basis of the mask layer in the step 9), filling a metal material into the electrode contact hole by adopting electron beam evaporation, wherein the filling depth is 2.6-4.1 microns, and forming a contact electrode of a bias input electrode, a grounding electrode and a voltage output electrode;
11) and performing mask treatment on the upper layer of the device obtained in the step 10), evaporating a layer of metal with the thickness of 0.1-0.2 mu m on the surface by adopting electron beam evaporation, taking the metal as an electrode with the top led out outwards, and forming a bias input electrode, a grounding electrode and a voltage output electrode on the top.
The invention has the beneficial effects that:
the active area and the substrate of the three-dimensional Hall sensor provided by the embodiment of the invention are made of GaAs, the transverse area of the three-dimensional Hall sensor is about 30 micrometers multiplied by 30 micrometers, the three-dimensional Hall sensor has smaller volume compared with the existing silicon-based three-dimensional Hall sensor, the accuracy of magnetic field sensing can be ensured in a wider temperature range (0-200 ℃), the voltage-related sensitivity of the magnetic field sensing is more than 0.13V/VT, the current-related sensitivity is more than 1000V/AT, and the sensitivity of the magnetic field sensing is higher than that of the existing most Si-based or GaAs-based three-dimensional Hall sensors.
The production process of the GaAs-based three-dimensional Hall sensor based on the planar process provided by the embodiment of the invention is simple to realize, is compatible with the existing GaAs planar process, does not need complex geometric assembly, can be highly integrated with other peripheral devices or signal processing systems, and greatly improves the safety and reliability of the device operation.
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In order to more clearly illustrate the detailed description of the invention or the technical solutions in the prior art, the drawings that are needed in the detailed description of the invention or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
FIG. 1 is a schematic structural diagram of a three-dimensional Hall sensor which is prepared by mutually orthogonal assembling of 6 Hall units in the prior art;
FIG. 2 is a schematic structural diagram of a three-dimensional Hall sensor fabricated by mutually orthogonal assembly by using 3 Hall units in the prior art;
FIG. 3 is a perspective view of a GaAs-based three-dimensional Hall sensor based on planar technology provided by a first embodiment of the invention;
FIG. 4 shows a top view of FIG. 3;
FIG. 5 shows a cross-sectional view taken along the midpoint of FIG. 3;
FIG. 6 shows a cross-sectional view of FIG. 3 taken along the midpoint of electrodes 306 and 307;
FIG. 7 shows a schematic diagram of a vertical Hall sensor;
FIG. 8 shows a schematic diagram numbering all of the electrodes in FIG. 3;
fig. 9 shows a schematic view of a device structure in which a passivation layer 500 is disposed on a second active layer;
FIG. 10 shows a schematic view of a device structure with contact electrodes;
FIG. 11 is a schematic diagram of a device structure obtained by masking the surface of the first active layer;
FIG. 12 is a schematic diagram of a device structure resulting from growing an isolation buffer layer on the device shown in FIG. 11;
fig. 13 is a schematic diagram showing a structure of a device obtained by growing a second active layer on the device shown in fig. 12 and then performing an etching process;
FIG. 14 shows growing Si on the device shown in FIG. 133N4Schematic of post Chemical Mechanical Polishing (CMP);
FIG. 15 is a schematic diagram of a device structure masked from the surface of the passivation layer shown in FIG. 14 except for the locations of the bias input electrode, ground electrode and voltage output electrode;
FIG. 16 is a schematic diagram of a device structure obtained by filling a metal material into an electrode contact hole in the device shown in FIG. 15;
FIG. 17 is a schematic view of a device structure obtained by masking the device shown in FIG. 16 and depositing metal on the surface by evaporation;
fig. 18 shows a schematic structural diagram of a three-dimensional hall sensor finally obtained by the embodiment of the invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and therefore are only examples, and the protection scope of the present invention is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains.
As shown in fig. 3 and 4, a schematic structural diagram of a GaAs-based three-dimensional hall sensor based on planar technology according to a first embodiment of the present invention is shown, which includes a substrate 100, a buffer transition layer 101, and a first active layer 102, which are sequentially disposed from bottom to top, where the first active layer 102 is used for sensing a magnetic field parallel to the substrate direction, the substrate 100 is made of semi-insulating GaAs, the buffer transition layer 101 is made of P-type heavily doped GaAs, the first active layer 102 is made of N-type doped GaAs, the first active layer 102 is provided with a bias input electrode, a ground electrode, and a voltage output electrode, and further includes an isolation buffer layer 103 and a second active layer 104, which are sequentially disposed from bottom to top, the isolation buffer layer 103 is disposed above the first active layer, the isolation buffer layer 103 is made of undoped GaAs, and the second active layer 104 is used for sensing a magnetic field perpendicular to the substrate direction, the material of the second active layer 104 is N-type doped GaAs, the second active layer 104 is provided with a ground electrode 200, 201, 202, 203, a voltage output electrode 300, 301, 302, 303, 304, 305, 306, 307 and a bias input electrode 400 at a position corresponding to the first active layer 102, the ground electrode of the first active layer 102 is connected to the ground electrode of the second active layer 104 through a contact hole, the voltage output electrode of the first active layer 102 is connected to the voltage output electrode of the second active layer 104 through a contact hole, and the voltage output electrode of the first active layer 102 is connected to the bias electrode of the second active layer 104 through a contact hole. The substrate 100 plays a role of mechanical support, the buffer transition layer 101 serves as a buffer transition layer between the substrate 100 and the first active layer 102, the isolation buffer layer 103 is used for isolating the first active layer 102 from the second active layer 104 and weakening mutual coupling of hall voltages of the first active layer and the second active layer, the first active layer 102 is mainly used for sensing a magnetic field in a direction parallel to the substrate, and the second active layer 104 is mainly used for sensing a magnetic field in a direction perpendicular to the substrate. The bias input electrode 400 is disposed at the midpoint of the second active layer 104, and the bias input electrode 400 has a square shape. As shown in fig. 5, a cross-sectional view taken along the midpoint of the entire three-dimensional hall sensor is shown, and as shown in fig. 6, cross-sectional views taken along the centers of the voltage output electrodes 306 and 307 are shown. The active area and the substrate of the three-dimensional Hall sensor in the embodiment of the invention are made of GaAs, the transverse area of the three-dimensional Hall sensor is about 30 micrometers multiplied by 30 micrometers, the three-dimensional Hall sensor has smaller volume compared with the existing silicon-based three-dimensional Hall sensor, the accuracy of magnetic field sensing can be ensured in a wider temperature range (0-200 ℃), and the sensitivity of the magnetic field sensing is higher than that of the existing most Si-based or GaAs-based three-dimensional Hall sensors (the voltage-related sensitivity of the magnetic field sensing is more than 0.13V/VT, and the current-related sensitivity is more than 1000V/AT).
The second active layer 104 has a cross-shaped structure, an offset input electrode is disposed at the cross portion of the cross-shaped structure, and the horizontal portions of the cross-shaped structure are
Figure BDA0001781984280000074
The vertical part of the cross-shaped structure is respectively of a structure shaped like a Chinese character 'wang', and the width of the offset input electrode is the same as the length of the transverse part of the structure shaped like the Chinese character 'wang'. The grounding electrode is arranged at the outer edge of the transverse part of the 'king' shape structure far away from the bias input electrode, and the voltage output electrodes are arranged at two ends of the transverse part in the middle of the 'king' shape structure. The first active layer 102 employs the principle of a vertical hall sensor, and applies a bias current I in the center of the hall sensor as shown in fig. 7BiasOr voltage, under the action of external magnetic field B, the carrier will deflect in different directions due to Hall effect, so as to output voltage V at one end of voltage output electrodeH +And the other end outputs a voltage VHI.e. the hall voltage is generated at the voltage output. The second active layer 104 employs a horizontal hall effectAccording to the sensor principle, the second active layer adopts the cross-shaped structure, so that the sensitivity of magnetic field sensing in the direction vertical to the substrate is greatly improved.
The ground electrodes 200, 201, 202, 203, the voltage output electrodes 300, 301, 302, 303, 304, 305, 306, 307, and the bias input electrode 400 are numbered in this order
Figure BDA0001781984280000075
As shown in FIG. 8, the electrodes and under the influence of the applied magnetic field will generate different voltages V on the electrodes ① - ⑧ due to the Hall effect1～VgFor a magnetic field parallel to the substrate, a Hall voltage is generated of
Figure BDA0001781984280000071
Figure BDA0001781984280000072
For a magnetic field perpendicular to the substrate, a Hall voltage is generated of
Figure BDA0001781984280000073
And is also provided with
Figure BDA0001781984280000081
Figure BDA0001781984280000082
Figure BDA0001781984280000083
Where I is the bias current applied to bias input electrode 400, and t1Is the thickness of the first active layer 102, t2Is the thickness of the second active layer 104,is the hall coefficient of the first active layer 102,
Figure BDA0001781984280000085
is the Hall coefficient, G, of the second active layer 104x，yIs the geometric correction factor, G, of the first active layer 102zIs the geometric correction factor of the second active layer 104.
Through the calculation, the magnetic field components in different directions can be obtained according to the voltage output on each electrode, and then the magnetic field size and direction in the space at the moment can be obtained through the vector synthesis of the magnetic fields in the three directions.
In order to protect the three-dimensional Hall sensor and weaken the surface state of the device, as shown in FIG. 9, a layer of Si is added on the surface of the whole device3N4As a passivation layer, i.e., Si is provided on the upper surface of the second active layer 1043N4The passivation layer 500. As shown in FIG. 10, a schematic diagram of a device structure with contact electrodes is shown, in Si3N4Forming contact holes on the passivation layer 500 and the isolation buffer layer 103, and forming contact holes and Si3N4The surface of the passivation layer is plated with metal and used as contact electrodes, namely, the voltage output electrode, the grounding electrode and the bias input electrode are all contact electrodes.
The active area and the substrate of the three-dimensional Hall sensor in the embodiment of the invention are made of GaAs, the transverse area of the three-dimensional Hall sensor is about 30 micrometers multiplied by 30 micrometers, the three-dimensional Hall sensor has smaller volume compared with the existing silicon-based three-dimensional Hall sensor, the accuracy of magnetic field sensing can be ensured in a wider temperature range (0-200 ℃), the voltage-related sensitivity of the magnetic field sensing is more than 0.13V/VT, the current-related sensitivity is more than 1000V/AT, and the sensitivity of the magnetic field sensing is higher than that of the existing most Si-based or GaAs-based three-dimensional Hall sensors. The three-dimensional Hall sensor for realizing the embodiment of the invention has simple process, does not need complex geometric assembly, can be highly integrated with other peripheral devices or signal processing systems, and greatly improves the safety and reliability of the device work.
The invention also provides a production process of the GaAs-based three-dimensional Hall sensor based on the planar process, which comprises the following steps:
the method comprises the following steps:
1) growing a layer of P-type heavily doped GaAs with the thickness of 0.5-1.5 mu m as a buffer transition layer 101 on a semi-insulating GaAs substrate 100 with the crystal orientation of <111> by an epitaxial process;
2) growing a layer of N-type doped GaAs with the thickness of 5-10 mu m on the surface of the buffer transition layer 101 through an epitaxial process to serve as a first active layer 102;
3) performing square mask processing on the center of the upper surface of the first active layer 102 to obtain a device structure schematic diagram as shown in fig. 11, wherein the side length of the square mask layer is slightly larger than the maximum side length of the second active layer, boron ion implantation is performed on the upper surface of the first active layer 102, the boron ion implantation direction is perpendicular to the substrate and is used for forming a high-resistance isolation region with other devices, so that the three-dimensional hall sensor is prevented from interfering with other devices on the same substrate, and then high-temperature annealing processing is performed;
4) growing a layer of undoped GaAs with the thickness of 0.5-1.5 μm as an isolation buffer layer 103 on the surface of the first active layer 102 after the isolation treatment by an epitaxial process, wherein the structural schematic diagram of the obtained device is shown in FIG. 12;
5) growing a layer of N-type doped GaAs with the thickness less than or equal to 0.5 μm on the surface of the isolation buffer layer 103 through an epitaxial process to serve as a second active layer 104, and performing rapid thermal annealing treatment on the obtained device structure schematic diagram as shown in FIG. 13;
6) on the upper surface of the second active layer for preparing a cross-shaped structure andthe structural schematic diagram of the device with the mask pattern obtained by the mask processing of the structure is shown in FIG. 14, the GaAs material is etched downwards by the etching process to the thickness of 0.5 μm, a cross-shaped structure is prepared, and the horizontal parts of the cross-shaped structure are respectively the horizontal parts
Figure BDA0001781984280000092
A cross-shaped structure, a vertical part of the cross-shaped structureAre respectively of a structure shaped like a Chinese character 'wang';
7) growing a layer of Si with the thickness of 3.5-4.0 mu m on the upper surface of the second active layer 104 prepared in the step 6) through an epitaxial process3N4As a passivation layer;
8) polishing the surface of the passivation layer by adopting a chemical mechanical polishing process to flatten the surface of the passivation layer, wherein the thickness of the obtained passivation layer is 2.0-2.5 microns, and the structural schematic diagram of the obtained device is shown in FIG. 15;
9) removing the position masks of the bias input electrode, the grounding electrode and the voltage output electrode on the surface of the passivation layer obtained in the step 8) to obtain a mask layer, and obtaining a device structure schematic diagram as shown in fig. 16, wherein an etching process is adopted to etch the passivation layer subjected to mask processing, the downward etching thickness is 2.0-2.5 mu m, then GaAs is etched, the downward etching thickness is 0.6-1.6 mu m, and an electrode contact hole is etched;
10) on the basis of the mask layer in the step 9), filling a metal material into the electrode contact hole by adopting electron beam evaporation, wherein the filling depth is 2.6-4.1 microns, and forming contact electrodes of a bias input electrode, a grounding electrode and a voltage output electrode to obtain a device structure schematic diagram as shown in fig. 17;
11) and performing mask processing on the upper layer of the device obtained in the step 10), evaporating a layer of metal with the thickness of 0.1-0.2 μm on the surface by adopting electron beam evaporation, taking the metal as an electrode led out from the top, and forming a bias input electrode, a grounding electrode and a voltage output electrode on the top to obtain a final structural schematic diagram of the three-dimensional Hall sensor, wherein the structural schematic diagram is shown in FIG. 18.
The production process of the GaAs-based three-dimensional Hall sensor based on the planar process is simple to realize, is compatible with the existing GaAs planar process, can be realized by using common epitaxy, ion implantation and etching processes, does not need complex geometric assembly, can be highly integrated with other peripheral devices or signal processing systems, and greatly improves the safety and reliability of the device operation.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.

Claims (7)

1. The GaAs-based three-dimensional Hall sensor based on a planar process is characterized by comprising a substrate, a buffer transition layer and a first active layer which are sequentially arranged from bottom to top, wherein the first active layer is used for sensing a magnetic field in a direction parallel to the substrate, the substrate is made of semi-insulating GaAs, the buffer transition layer is made of P-type heavily doped GaAs, the first active layer is made of N-type doped GaAs, and the first active layer is provided with a contact electrode; the contact electrode consists of a bias input electrode, a grounding electrode and a voltage output electrode; still include from supreme isolation buffer layer and the second active layer that sets gradually down, keep apart the buffer layer setting in the top of first active layer, the material that keeps apart the buffer layer adopts undoped GaAs, the second active layer is used for the sensing of perpendicular to substrate direction magnetic field, the material of second active layer adopts N type doped GaAs, the second active layer is equipped with bias input electrode, telluric electricity field and voltage output electrode and corresponds the connection through the contact hole with the corresponding position of first active layer.
2. The GaAs-based three-dimensional hall sensor based on a planar process of claim 1, wherein the bias input electrode is disposed at the midpoint of the first active layer, the isolation buffer layer, and the second active layer, and the bias input electrode is square.
3. The planar process based GaAs based three-dimensional hall sensor according to claim 2, wherein the second active layer has a cross-shaped structure as a wholeThe cross part of the cross-shaped structure is provided with an offset input electrode, and the horizontal parts of the cross-shaped structure are respectively
Figure FDA0002249671710000011
The vertical part of the cross-shaped structure is of a structure shaped like a Chinese character 'wang', and the width of the bias input electrode is the same as the length of the transverse part of the structure shaped like a Chinese character 'wang'.
4. The planar process-based GaAs-based three-dimensional hall sensor according to claim 3, wherein the ground electrode is disposed at an outer edge of a lateral portion of the "king" shaped structure away from the bias input electrode, and the voltage output electrodes are disposed at both ends of the lateral portion in the middle of the "king" shaped structure.
5. The GaAs-based three-dimensional hall sensor based on planar process of claim 1, wherein Si is provided on an upper surface of the second active layer3N4Of (3) a passivation layer.
6. A production process of a GaAs-based three-dimensional Hall sensor based on a planar process is characterized by comprising the following steps:
1) growing a layer of P-type heavily doped GaAs with the thickness of 0.5-1.5 mu m as a buffer transition layer on a semi-insulating GaAs substrate with the crystal orientation of <111> by an epitaxial process;
2) growing a layer of N-type doped GaAs with the thickness of 5-10 mu m on the surface of the buffer transition layer through an epitaxial process to be used as a first active layer;
3) performing square mask processing on the center of the upper surface of the first active layer, and performing boron ion implantation on the upper surface of the first active layer, wherein the boron ion implantation direction is vertical to the substrate and is used for forming a high-resistance isolation region with other devices;
4) growing a layer of undoped GaAs with the thickness of 0.5-1.5 mu m as an isolation buffer layer on the surface of the first active layer subjected to the isolation treatment by an epitaxial process;
5) and growing a layer of N-type doped GaAs with the thickness less than or equal to 0.5 mu m on the surface of the isolation buffer layer through an epitaxial process to be used as a second active layer, and then carrying out rapid thermal annealing treatment.
7. The process for producing a GaAs-based three-dimensional hall sensor based on a planar process as claimed in claim 6, wherein the process further comprises:
6) on the upper surface of the second active layer for preparing a cross-shaped structure and
Figure FDA0002249671710000021
mask treatment of the cross-shaped structure, wherein an etching process is adopted to etch the GaAs material downwards to a thickness of 0.5 mu m, a cross-shaped structure is prepared, and horizontal parts of the cross-shaped structure are horizontal parts respectively
Figure FDA0002249671710000022
The vertical parts of the cross-shaped structures are of a structure shaped like a Chinese character 'wang';
7) growing a layer of Si with the thickness of 3.5-4.0 mu m on the upper surface of the second active layer prepared in the step 6) through an epitaxial process3N4As a passivation layer;
8) polishing the surface of the passivation layer by adopting a chemical mechanical polishing process to flatten the surface of the passivation layer to obtain the passivation layer with the thickness of 2.0-2.5 mu m;
9) removing the position masks of the bias input electrode, the grounding electrode and the voltage output electrode on the surface of the passivation layer obtained in the step 8) to obtain a mask layer, etching the passivation layer subjected to mask processing by adopting an etching process, wherein the downward etching thickness is 2.0-2.5 mu m, etching GaAs, and etching the electrode contact hole, wherein the downward etching thickness is 0.6-1.6 mu m;
10) on the basis of the mask layer in the step 9), filling a metal material into the electrode contact hole by adopting electron beam evaporation, wherein the filling depth is 2.6-4.1 microns, and forming a contact electrode of a bias input electrode, a grounding electrode and a voltage output electrode;
11) and performing mask treatment on the upper layer of the device obtained in the step 10), evaporating a layer of metal with the thickness of 0.1-0.2 mu m on the surface by adopting electron beam evaporation, taking the metal as an electrode with the top led out outwards, and forming a bias input electrode, a grounding electrode and a voltage output electrode on the top.
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