CN109244176B - Micro-ellipsoidal zero-crosstalk tellurium-cadmium-mercury infrared focal plane detector - Google Patents
Micro-ellipsoidal zero-crosstalk tellurium-cadmium-mercury infrared focal plane detector Download PDFInfo
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- CN109244176B CN109244176B CN201811176475.0A CN201811176475A CN109244176B CN 109244176 B CN109244176 B CN 109244176B CN 201811176475 A CN201811176475 A CN 201811176475A CN 109244176 B CN109244176 B CN 109244176B
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- 238000001514 detection method Methods 0.000 claims abstract description 26
- 238000010521 absorption reaction Methods 0.000 claims abstract description 6
- 230000005855 radiation Effects 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000001534 heteroepitaxy Methods 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 238000001451 molecular beam epitaxy Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a micro-ellipsoidal zero-crosstalk tellurium-cadmium-mercury infrared focal plane detector. The photosensitive element of the infrared focal plane detector with the new configuration adopts a micro-ellipsoidal structure containing a P-n junction and is connected with a common electrode through a base region common P-type layer. The active area of the micro-ellipsoidal array base light sensitive element infrared detector is completely isolated, so that ultra-low crosstalk detection can be realized, and the internal stress of a detection chip can be partially released. Meanwhile, the light sensitive element adopts a micro-ellipsoidal structure with total internal reflection, so that the photoelectric p-n junction area is far smaller than the infrared radiation absorption area, and the signal-to-noise ratio and the detection rate of the infrared focal plane detector can be effectively improved; solves the difficult problem of miniaturization of the device.
Description
Technical Field
The invention relates to a chip design and manufacturing technology of a tellurium-cadmium-mercury infrared detector, in particular to a micro-ellipsoidal zero-crosstalk tellurium-cadmium-mercury infrared focal plane detector. The detector can realize ultra-low crosstalk detection and can also improve the signal-to-noise ratio and detection efficiency of the infrared focal plane detector.
Background
Infrared focal plane array technology is a key basis for modern weapon systems. The tellurium-cadmium-mercury material can cover the whole infrared band by adjusting components, and photon wavelength corresponding to the forbidden band width of the tellurium-cadmium-mercury material is the most commonly used detection material of an infrared detector and has wide application in various fields such as aviation, aerospace, agriculture, ocean and the like. The competitive core of mercury cadmium telluride materials, compared to indium antimonide, indium gallium arsenide, and superlattice materials, is the continuous controllability of the composition. With the continuous improvement of the detection resolution requirements of the tellurium-cadmium-mercury infrared focal plane detector, the new generation of tellurium-cadmium-mercury infrared focal plane detector is developed in the direction of large scale and miniaturization.
However, as the pixel size is further reduced, the mercury cadmium telluride infrared focal plane detector of conventional construction suffers from a critical scientific problem in that the resolution of the detector is difficult to further increase. This is limited or affected mainly by the following two factors. This is due to the fact that as the pixel size becomes smaller, the photo-generated carrier collection region spacing between small-sized pixels of an infrared focal plane detector of conventional construction is very small, which can lead to large spatial electrical and optical crosstalk problems. On the other hand, the signal to noise ratio and detection rate of the infrared detector are relatively small due to the fact that the small-size pixel photocurrent signal of the limited area of the infrared focal plane detector is relatively small. Therefore, when the pixel size is further reduced, the detection resolution of the infrared detector with the traditional configuration is limited by not only space electrical and optical crosstalk, but also the signal-to-noise ratio and the detection rate of the infrared detector.
Therefore, the patent provides a novel structure of a novel tellurium-cadmium-mercury infrared focal plane detector based on a micro-ellipsoidal array, so as to solve the scientific and technical problems that the detection resolution can not be further improved when the pixel size of the infrared detector with the traditional configuration is further reduced, and lay a foundation theory and a key technical foundation for the development of the infrared focal plane detector with the larger specification and smaller pixel size.
Disclosure of Invention
The invention aims to provide a novel tellurium-cadmium-mercury infrared focal plane detector based on a micro-ellipsoidal array, which solves the problems of serious electrical crosstalk, poor signal-to-noise ratio, low detection efficiency and difficult stress release caused by lateral diffusion of unbalanced carriers in the large-scale and miniaturized processes of the existing tellurium-cadmium-mercury infrared focal plane detector.
In order to solve the technical problems, the invention provides the following technical scheme:
new-configuration tellurium-cadmium-mercury infrared focal plane detection based on micro-ellipsoidal arrayThe device is characterized in that: the film material selected by the detector is P 1 -p 2 -n+ type multilayer heterojunction tellurium-cadmium-mercury thin film material.
Further, the P is 1 -p 2 The thin film growth mode of the n+ type multi-layer heterojunction tellurium-cadmium-mercury thin film material is molecular beam epitaxial growth.
As shown in FIG. 1, the photosensitive element of the infrared focal plane detector adopts a micro-ellipsoidal structure containing a P-n junction and passes through the base region P 1 A pattern in which the layers are connected to a common electrode.
Furthermore, the active area of the micro-ellipsoidal array base light sensitive element infrared detector is completely physically isolated, so that ultra-low crosstalk detection can be realized, and the stress of a detector chip can be relieved;
furthermore, the micro-ellipsoidal array base light sensitive element infrared detector adopts a micro-ellipsoidal structure with total internal reflection, and reduces the photoelectric p-n junction area on the premise of not sacrificing the infrared radiation absorption area;
forming a preset chip structure by adopting a micro-ellipsoid array mask technology, and transferring a micro-ellipsoid mask pattern to an infrared focal plane with high precision by adopting an induced coupling plasma enhanced reactive ion etching technology;
the atomic layer deposition technology is adopted to realize the electrical and chemical protection of the surface, the components of the passivation film are double-layer passivation of cadmium telluride and zinc sulfide, and the thickness is 200 nanometers.
The two sides of the photosensitive unit are respectively provided with a metal electrode, and the metal electrodes are made of tin and gold double-layer metals, and are arranged on the photosensitive unit through a plating process evaporation or sputtering process.
The invention provides a micro-ellipsoid zero-crosstalk tellurium-cadmium-mercury infrared focal plane detector, wherein a light sensitive element of the novel configuration infrared focal plane detector adopts a micro-ellipsoid structure comprising a P-n junction and is connected with a public electrode through a base region P1 layer. The active area of the micro-ellipsoidal array base photosensitive element infrared detector is completely isolated, so that ultra-low crosstalk detection can be realized, and the internal stress of a detection chip can be partially released. Meanwhile, the photo-sensitive element adopts a micro-ellipsoidal structure with total internal reflection (see figure 1), so that the photoelectric p-n junction area can be far smaller than the infrared radiation absorption area, and the signal-to-noise ratio and the detection rate of the infrared focal plane detector can be effectively improved.
Drawings
Fig. 1 is a schematic diagram of the structure of an infrared focal plane detector of conventional configuration and micro-ellipsoids.
Fig. 2 is a working principle of a micro-ellipsoidal tellurium-cadmium-mercury infrared focal plane detector.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention may be embodied in many other forms than described herein and similarly practiced by those skilled in the art without departing from the spirit or scope of the invention, which is therefore not to be limited to the specific embodiments disclosed below.
The novel micro-ellipsoidal tellurium-cadmium-mercury infrared focal plane detector combines the micro-ellipsoidal structure with the photosensitive element structure of the traditional detector, and adopts a mode of connecting the micro-ellipsoidal structure with a P-n junction and a common electrode through a base region P1 layer. The active area of the micro-ellipsoidal array base photosensitive element infrared detector is completely isolated, so that ultra-low crosstalk detection can be realized, and the internal stress of a detection chip can be partially released. Meanwhile, the light sensitive element adopts a micro-ellipsoidal structure with total internal reflection, so that the photoelectric p-n junction area is far smaller than the infrared radiation absorption area, and the signal-to-noise ratio and the detection rate of the infrared focal plane detector can be effectively improved.
Fig. 1 shows the structure of an infrared focal plane detector of conventional configuration and micro-ellipsoids.
As shown in FIG. 1, the micro-ellipsoidal infrared focal plane detector structure provided by the embodiment of the invention comprises a tellurium-zinc-cadmium substrate 6, a base region P-type tellurium-cadmium-mercury layer 5, a P-type response layer 4, an N-type tellurium-cadmium-mercury layer 3, an indium column 2 and a readout circuit 1. The P-type tellurium-cadmium-mercury material 5 grows on a substrate material 6 with good lattice matching, the tellurium-cadmium-mercury material on the base region P-type layer is a P-type response layer 4 with a micro-ellipsoidal structure, the P-type response layer and the N-type tellurium-cadmium-mercury layer 3 form a PN junction, and photocurrent generated by the detector is transmitted to the reading circuit 1 through the indium column 2. The active area of the photosensitive element is a micro-ellipsoidal structure with complete physical isolation and total internal reflection, and the area of a photoelectric p-n junction is reduced on the premise of not sacrificing the absorption area of infrared radiation; the atomic layer deposition technology is adopted to realize the electrical and chemical protection of the surface, the components of the passivation film are double-layer passivation of cadmium telluride and zinc sulfide, and the thickness is 200 nanometers. The chip is evaporated by a coating process or sputtered to form a metal-semiconductor contact with tin and gold, and an indium column is used for guiding out photocurrent. The key presses the pins and is in inverse welding and mixing with the circuit to form interconnection, so that the infrared focal plane detector with low crosstalk and high detection efficiency is formed.
Fig. 2 shows the working principle of the novel micro-ellipsoidal infrared focal plane detector. The illustrated structure includes a GaAs (211) substrate 1, P 1 Base layer 2, P 2 Responsive to layer 3, n layer 4 is heavily doped. According to the photoelectric conversion principle of the infrared detector, the detection efficiency of the micro-ellipsoidal tellurium-cadmium-mercury infrared focal plane detector is improved by a multiple of:considering the processing technology base of the micro-ellipsoidal array chip, the pixel size is comprehensively estimated to be 20 multiplied by 20 mu m 2 The detection efficiency of the infrared detector can be improved by 2 times. Considering that the current technology for processing the micro-ellipsoidal detection chip is not mature, it is reasonable to increase the detection efficiency of the infrared detector by 1.5 times. Meanwhile, the electrical crosstalk between pixels of the micro-ellipsoidal tellurium-cadmium-mercury infrared focal plane detector can be reduced to zero theoretically.
The above description is only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions can be easily conceived by those skilled in the art, and should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (1)
1. A micro-ellipsoidal zero-crosstalk tellurium-cadmium-mercury infrared focal plane detector comprises a p-n junction micro-ellipsoidal structure, and is characterized in that:
1) By molecular beam epitaxy technology, tellurium-cadmium-mercury heterojunction material is grownBy adopting a component heteroepitaxy technology, the components of Te, cd and Hg are controlled by changing the beam intensity of Te, so that P is realized 1 -p 2 -n + Growing a multi-layer heterojunction tellurium-cadmium-mercury film material;
2) The photosensitive element of the infrared focal plane detector adopts a micro-ellipsoidal structure comprising a P-n junction and passes through a base region P 1 A pattern in which the layers are connected to the common electrode;
3) The micro-ellipsoid structure is formed by a chip micro-ellipsoid array processing technology, a preset chip structure is formed by adopting a micro-ellipsoid array mask technology, and an induced coupling plasma enhanced reactive ion etching technology is adopted to transfer a micro-ellipsoid mask pattern to an infrared focal plane with high precision;
4) The active areas of the micro-ellipsoidal array base light sensitive element infrared detectors are completely physically isolated, so that ultra-low crosstalk detection can be realized, and the stress of the detector chip can be partially released;
5) The micro-ellipsoidal array base light sensitive element infrared detector adopts a micro-ellipsoidal structure with total internal reflection, and reduces the photoelectric p-n junction area on the premise of not sacrificing the infrared radiation absorption area;
6) Depositing a passivation film by adopting an atomic layer deposition technology to realize the electrical and chemical protection of the surface; the passivation film comprises double layers of cadmium telluride and zinc sulfide, and the thickness of the passivation film is 200 nanometers.
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| CN111554761B (en) * | 2020-04-02 | 2022-07-22 | 武汉高芯科技有限公司 | Detector chip and preparation method thereof |
| CN113130676A (en) * | 2021-04-16 | 2021-07-16 | 中国科学院半导体研究所 | Focal plane infrared detector chip, detector and preparation method |
| CN115241304A (en) * | 2022-07-27 | 2022-10-25 | 武汉高芯科技有限公司 | Infrared focal plane pixel reflecting curtain, infrared focal plane array and chip |
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