CN104037256A - Silicon-based tellurium cadmium mercury long-wave photodiode chip - Google Patents
Silicon-based tellurium cadmium mercury long-wave photodiode chip Download PDFInfo
- Publication number
- CN104037256A CN104037256A CN201410258854.XA CN201410258854A CN104037256A CN 104037256 A CN104037256 A CN 104037256A CN 201410258854 A CN201410258854 A CN 201410258854A CN 104037256 A CN104037256 A CN 104037256A
- Authority
- CN
- China
- Prior art keywords
- silicon
- photodiode chip
- long
- cadmium mercury
- hgcdte layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 title abstract description 6
- 229910052714 tellurium Inorganic materials 0.000 title abstract description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 11
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000009194 climbing Effects 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000008188 pellet Substances 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 5
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a silicon-based tellurium cadmium mercury long-wave photodiode chip which structurally comprises a Si substrate, a CdTe buffer layer firmly bonded to the Si substrate and a micro table face heterojunction photodiode arranged on the CdTe buffer layer sequentially arranged from bottom to top. The photodiode chip has the advantage that the photodiode chip adopts an n-on-P+ or p-on-N+ structure compared with the silicon-based tellurium cadmium mercury long-wave photodiode chip of a traditional structure, and can restrain interface recombination and improve device performance. Narrow band response spectrum is acquired under the condition that an optical filter is not used, the detection rate of long-wave bands is increased, and the large-area array infrared detector pixel series connection resistor consistency is ensured.
Description
Technical field
The present invention relates to infrared photoelectric detector, specifically refer to a kind of employing n-on-P
+or p-on-N
+the silicon-based tellurium-cadmium mercury long wave photodiode chip of structure.
Background technology
Advanced mercury-cadmium-tellurium focal plane photodetector technology is extended to three-dimensional imaging by the two dimension target imaging of single wave band or obtains the spectral characteristic of target simultaneously, and the continuous future development towards ultrahigh resolution and high recognition capability.On the material of detector, require the size of material, performance is higher, structure is more complicated, thereby realize the function that multiple target information is produced to multiple response.For tellurium cadmium mercury epitaxial technology, the size of material is mainly limited by backing material.In traditional technology, tellurium zinc cadmium and GaAs are the backing materials of two kinds of comparative maturities, the advantage of these substrates is that its lattice can match or comparison match with mercury cadmium telluride, it is also comparatively easy that extension goes out high-quality tellurium cadmium mercury epitaxial material, but the hot matching properties of they and silicon reading circuit is difficult to meet the requirement of extensive infrared focal plane device.Theoretically, only have silicon substrate material could finally overcome this technical restriction, meanwhile, the increase of scantling, the reduction of cost also be unable to do without uses silicon-based substrate.Yet lattice mismatch between silicon and mercury cadmium telluride (19% left and right) is but the biggest obstacle of development silicon-based tellurium-cadmium mercury epitaxy technology.Early stage exploration work is what under the drive of silica-based GaAs epitaxy technology, to carry out, further development is to utilize the atom modified technology of silicon substrate surface As to realize the direct extension of silica-based ZnTe, is nowadays the tellurium cadmium mercury epitaxial technology using silica-based CdTe Mbe Grown as substrate.Although obtained significant progress, but before solving the problem that lattice mismatch is large completely, be present in the compound preparation that is still restricting high performance silicon-based tellurium-cadmium mercury LONG WAVE INFRARED focus planardetector in interface that the various defects between mercury cadmium telluride active region and CdTe resilient coating cause.That silicon-based tellurium-cadmium mercury LONG WAVE INFRARED focus planardetector mainly adopts is the n of Implantation
+the p that-on-p structure or nonionic inject
+-on-n structure.The photonic absorption district of the device of these two kinds of structures is epitaxial growth on silica-based CdTe Mbe Grown all, thereby the overall performance of detector has been subject to being present in the compound restriction in interface between mercury cadmium telluride active region and CdTe resilient coating.In addition, in the application of LONG WAVE INFRARED focus planardetector, be also by increasing the mode of filter, to obtain narrowband response spectrum on the device of these two kinds of structures, improve the detectivity of long-wave band.
Summary of the invention
The object of this invention is to provide silicon-based tellurium-cadmium mercury longwave optical electric diode novel chip, it adopts n-on-P
+or p-on-N
+structure, can suppress interface compound, improve device performance and by device acquisition narrowband response itself.
The structure of silicon-based tellurium-cadmium mercury long wave photodiode chip of the present invention is followed successively by: Si substrate 1, CdTe resilient coating 2 with Si substrate strong bonded, micro-table top heterojunction photodiode 3 on CdTe resilient coating and climbing public electrode 4, on micro-table top heterojunction photodiode 3, there is the first indium pellet 5, on climbing public electrode, there is the second indium pellet 6, it is characterized in that: described micro-table top heterojunction photodiode 3 is n-on-P
+or p-on-N
+structure, wherein:
At n-on-P
+in structure, N-shaped HgCdTe layer is In doping HgCdTe layer, and doping content is 1.0-15.0 * 10
15cm
-3, thickness is 8.0-10.0 μ m; P
+type HgCdTe layer is Hg room doping HgCdTe layer, and doping content is 1.0-8.0 * 10
17cm
-3, thickness is 4.0-5.0 μ m;
At p-on-N
+in structure, p-type HgCdTe layer is Hg room doping HgCdTe layer, and doping content is 1.0-15.0 * 10
15cm
-3, thickness is 8.0-10.0 μ m; N
+type HgCdTe layer is In doping HgCdTe layer, and doping content is 1.0-8.0 * 10
17cm
-3, thickness is 4.0-5.0 μ m.
The device course of work of the present invention is: when infrared radiation is when substrate back incides detector chip, through after silica-based CdTe substrate, the infrared radiation of short-and-medium wave band is at P
+or N
+type HgCdTe layer is absorbed, and the photo-generated carrier of generation is not substantially by n-P
+or p-N
+knot absorbs; The infrared radiation of long-wave band moves on, and arrives n or p-type HgCdTe layer and is absorbed, and the photo-generated carrier of generation is by n-P
+or p-N
+separately, the long-wave band photosignal of generation is by reading interconnection In ball 5 and 6 outputs for the internal electric field of knot, thus the focus plane device chip that can survey long wave of formation.
Advantage of the present invention:
1. than traditional n
+-on-p or p
+the silicon-based tellurium-cadmium mercury long wave photodiode chip of-on-n structure, n-on-P of the present invention
+or p-on-N
+it is compound that the silicon-based tellurium-cadmium mercury long wave photodiode chip of structure can suppress interface, improves device performance.
2.n-on-P
+or p-on-N
+the silicon-based tellurium-cadmium mercury LONG WAVE INFRARED focus planardetector of structure can obtain narrowband response spectrum in the situation that not using filter, improves the detectivity of long-wave band.
3. the P of detection chip of the present invention
+or N
+type HgCdTe layer has less body impedance, can guarantee the consistency of large area array infrared detector picture dot series resistance.
Accompanying drawing explanation
Fig. 1 is n-on-P of the present invention
+or p-on-N
+the generalized section of the silicon-based tellurium-cadmium mercury long wave photodiode chip of structure.
Fig. 2 is traditional n-on-p
+quantum efficiency curve when the long wave photodiode chip of structure does not add anti-reflection film.
Fig. 3 is n-on-P of the present invention
+quantum efficiency curve when the long wave photodiode chip of structure does not add anti-reflection film.
Fig. 4 is n-on-P of the present invention
+the response spectrum curve of the long wave photodiode chip of structure.
Embodiment
Below in conjunction with accompanying drawing, take the n-on-P of picture dot centre-to-centre spacing as 15 μ m
+the heterogeneous example of becoming of type HgCdTe, elaborates to the specific embodiment of the present invention:
As shown in Figure 1, first on Si substrate 1, increase successively CdTe resilient coating 2; Hg room doping content is 1.0 * 10
17, thickness is the P that 5 μ m, component are 0.245
+type HgCdTe layer; And In doping content is 1.0 * 10
15, thickness is the N-shaped HgCdTe layer that 10 μ m, component are 0.21; Then the In post that increases passivation layer, metal ohmic contact electrode, metal climbing electrode and interconnect with reading circuit on the exposed surface of micro-table top.
Finally the photoelectric characteristic of above-described embodiment is carried out to numerical simulation.Fig. 2 is traditional n-on-p
+quantum efficiency curve when the long wave photodiode chip of structure does not add anti-reflection film.Fig. 3 is n-on-P of the present invention
+quantum efficiency curve when the long wave photodiode chip of structure does not add anti-reflection film.As shown in Figure 2,3, in the situation that not increasing anti-reflection film, the quantum efficiency of LONG WAVE INFRARED device of the present invention is apparently higher than the LONG WAVE INFRARED device of traditional structure.And calculated by Fig. 2,3, at long-wave band scope (8-12 μ m), the quantum efficiency of LONG WAVE INFRARED device of the present invention exceeds 45.3% than traditional structure.Fig. 4 is n-on-P of the present invention
+the response spectrum curve of the Long Wave Infrared Probe of structure.As shown in Figure 4, LONG WAVE INFRARED device of the present invention can obtain narrowband response spectrum in the situation that not using filter, improves the detectivity of long-wave band.
As can be seen here, employing n-on-P of the present invention
+or p-on-N
+the organization plan of the infrared long wave photodiode chip of silicon-based tellurium-cadmium mercury of structure is feasible, rational.
Claims (1)
1. silicon-based tellurium-cadmium mercury long wave photodiode chip, its structure is followed successively by from bottom to top: Si substrate (1), CdTe resilient coating (2) with Si substrate strong bonded, micro-table top heterojunction photodiode (3) and climbing public electrode (4), the first indium pellet (5) is positioned on micro-table top heterojunction photodiode (3), the second indium pellet (6) is positioned on climbing public electrode, it is characterized in that: described micro-table top heterojunction photodiode (3) is n-on-P
+or p-on-N
+structure, wherein:
At n-on-P
+in structure, N-shaped HgCdTe layer is In doping HgCdTe layer, and doping content is 1.0-15.0 * 10
15cm
-3, thickness is 8.0-10.0 μ m; P
+type HgCdTe layer is Hg room doping HgCdTe layer, and doping content is 1.0-8.0 * 10
17cm
-3, thickness is 4.0-5.0 μ m;
At p-on-N
+in structure, p-type HgCdTe layer is Hg room doping HgCdTe layer, and doping content is 1.0-15.0 * 10
15cm
-3, thickness is 8.0-10.0 μ m; N
+type HgCdTe layer is In doping HgCdTe layer, and doping content is 1.0-8.0 * 10
17cm
-3, thickness is 4.0-5.0 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410258854.XA CN104037256A (en) | 2014-06-12 | 2014-06-12 | Silicon-based tellurium cadmium mercury long-wave photodiode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410258854.XA CN104037256A (en) | 2014-06-12 | 2014-06-12 | Silicon-based tellurium cadmium mercury long-wave photodiode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104037256A true CN104037256A (en) | 2014-09-10 |
Family
ID=51467956
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|---|---|---|---|
| CN201410258854.XA Pending CN104037256A (en) | 2014-06-12 | 2014-06-12 | Silicon-based tellurium cadmium mercury long-wave photodiode chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244176A (en) * | 2018-10-10 | 2019-01-18 | 中国科学院上海技术物理研究所 | A kind of zero cross-talk HgCdTe infrared focal plane detector of micro- ellipsoid formula |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1617357A (en) * | 2004-10-26 | 2005-05-18 | 中国科学院上海技术物理研究所 | Tellurium-cadmium-mercury infrared double color focus plane detector array chip |
| CN101030591A (en) * | 2007-03-29 | 2007-09-05 | 中国科学院上海技术物理研究所 | Telescopic-lattice chip for silicon-based tellurium-cadmium mercury device |
| CN101958332A (en) * | 2010-07-23 | 2011-01-26 | 中国科学院上海技术物理研究所 | Photodiode n region structure optimized mercury-cadmium-tellurium (HgCdTe) long-wavelength detection chip |
-
2014
- 2014-06-12 CN CN201410258854.XA patent/CN104037256A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1617357A (en) * | 2004-10-26 | 2005-05-18 | 中国科学院上海技术物理研究所 | Tellurium-cadmium-mercury infrared double color focus plane detector array chip |
| CN101030591A (en) * | 2007-03-29 | 2007-09-05 | 中国科学院上海技术物理研究所 | Telescopic-lattice chip for silicon-based tellurium-cadmium mercury device |
| CN101958332A (en) * | 2010-07-23 | 2011-01-26 | 中国科学院上海技术物理研究所 | Photodiode n region structure optimized mercury-cadmium-tellurium (HgCdTe) long-wavelength detection chip |
Non-Patent Citations (3)
| Title |
|---|
| 叶振华 等: "同时模式的中波/长波碲镉汞双色红外探测器", 《红外与毫米波学报》, vol. 31, no. 6, 31 December 2012 (2012-12-31) * |
| 叶振华 等: "碲镉汞红外双色探测器响应光谱研究", 《红外与毫米波学报》, vol. 28, no. 1, 28 February 2009 (2009-02-28) * |
| 解晓辉 等: "HgCdTe甚长波红外光伏器件的光电性能", 《红外与激光工程》, vol. 42, no. 5, 31 May 2013 (2013-05-31) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244176A (en) * | 2018-10-10 | 2019-01-18 | 中国科学院上海技术物理研究所 | A kind of zero cross-talk HgCdTe infrared focal plane detector of micro- ellipsoid formula |
| CN109244176B (en) * | 2018-10-10 | 2023-09-12 | 中国科学院上海技术物理研究所 | Micro-ellipsoidal zero-crosstalk tellurium-cadmium-mercury infrared focal plane detector |
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