CN109244110A - Display panel and its manufacturing method - Google Patents
Display panel and its manufacturing method Download PDFInfo
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- CN109244110A CN109244110A CN201811007253.6A CN201811007253A CN109244110A CN 109244110 A CN109244110 A CN 109244110A CN 201811007253 A CN201811007253 A CN 201811007253A CN 109244110 A CN109244110 A CN 109244110A
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- layer
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- display panel
- resin material
- pixel confining
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
A kind of display panel and its manufacturing method, the display panel includes: first substrate, multiple device layers, first electrode layer, light emitting organic layers, pixel confining layer and the second electrode lay.The multiple device layer is set on the first substrate, wherein the multiple device layer includes active layers, the material of the active layers includes metal oxide.The first electrode layer is located on the multiple device layer.The pixel confining layer is located in a part of the first electrode layer.The light emitting organic layers are located on another part of the first electrode layer.The second electrode lay is located in the light emitting organic layers and the pixel confining layer, wherein the pixel confining layer along the first electrode layer towards the index distribution on the direction of the second electrode lay be from small to large.
Description
Technical field
The invention relates to a kind of panel and its manufacturing methods, in particular to a kind of display panel and its manufacturer
Method.
Background technique
Organic electroluminescence device (Organic electroluminescent Device) is relative to LCD (Liquid
Crystal Display；Liquid crystal display) have many advantages, such as that self-luminous, reaction is fast, visual angle is wide, brightness is high, color is gorgeous, frivolous
It is considered as next-generation display technology.With amorphous oxide semiconductor (Amorphous Oxide Semiconductor, AOS)
Film has excellent characteristic, such as field-effect as the amorphous oxide thin film transistor of active layers (or active layer) material
Mobility is big, subthreshold swing is small, large-area uniformity is good, can low temperature preparation, simple etc. to visible transparent and process flow
Plurality of advantages.
However, the metal oxide as active layer material is steady for light in bottom emitting type organic electroluminescence device
Qualitative bad (such as short-wavelength light of visible light etc.), therefore the light of generation is direct when organic luminous layer carries out electroluminescent
When irradiating or reflex in the active layers of thin film transistor (TFT), thin film transistor (TFT) can generate for example significant threshold voltage drift,
The adverse effect that on-off ratio becomes smaller and leakage current increases.
Therefore, it is necessary to a kind of display panel and its manufacturing method are provided, to solve the problems of prior art.
Summary of the invention
In view of this, the present invention provides a kind of display panel and its manufacturing method, it is thin present in the prior art to solve
The active layers of film transistor are irradiated by light and then thin film transistor (TFT) are caused to generate the drift of significant threshold voltage, on-off ratio change
The problem of adverse effect that small and leakage current increases.
A purpose of the present invention is that providing a kind of display panel and its manufacturing method, wherein pixel confining layer is along described
First electrode layer towards the index distribution on a direction of the second electrode lay be from small to large, therefore can be inclined by light
Roll over the active layers far from thin film transistor (TFT), to avoid or reduce the thin film transistor (TFT) and generated above-mentioned by the irradiation of light
Adverse effect.
To reach foregoing purpose of the invention, one embodiment of the invention provides a kind of display panel, wherein the display surface
Plate includes: a first substrate, multiple device layers, a first electrode layer, a light emitting organic layers, a pixel confining layer and one second electricity
Pole layer.The multiple device layer is set on the first substrate, wherein the multiple device layer includes an active layers, the active
The material of layer includes a metal oxide.The first electrode layer is located on the multiple device layer.The pixel confining layer is set
In a part of the first electrode layer.The light emitting organic layers are located on another part of the first electrode layer.It is described
The second electrode lay is located in the light emitting organic layers and the pixel confining layer, wherein the pixel confining layer is along described first
Electrode layer towards the index distribution on a direction of the second electrode lay be from small to large.
In one embodiment of this invention, the pixel confining layer includes: one first resin material and one second resinous wood
Material.First resin material includes multiple photosensitive single groups, wherein first resin material is adjacent to the first electrode layer.
Second resin material includes multiple photosensitive more groups, wherein second resin material is adjacent to the second electrode lay.
In one embodiment of this invention, the pixel confining layer includes a light absorbent, and the light absorbent uniformly divides
It is dispersed in the pixel confining layer.
In one embodiment of this invention, the multiple device layer further includes: a buffer layer, a grid, a gate insulator
Layer, a source electrode and a drain electrode, a passivation layer, a colored filter and a flatness layer.The buffer layer is located at the first substrate
On.The grid is located on the buffer layer.The gate insulating layer is located on the grid and the buffer layer.The source electrode
It is set on the gate insulating layer with the drain electrode and the active layers is located between the source electrode and the drain electrode.It is described blunt
Change layer to be located in the gate insulating layer, the source electrode and the drain electrode.The colored filter is located on the passivation layer.Institute
It states flatness layer and is located at the passivation layer and the colorized optical filtering on piece, wherein the first electrode layer is set on the flat laye,
And a part of the first electrode layer is through the flatness layer and the passivation layer, to be electrically connected the drain electrode.
In one embodiment of this invention, the display panel further includes a second substrate, is located at the second electrode lay
On.
Another embodiment of the present invention provides a kind of manufacturing methods for showing panel, wherein the manufacturing method packet of the display panel
Containing step: providing a first substrate；Multiple device layers are formed on the first substrate, wherein the multiple device layer includes one
Active layers, the material of the active layers include a metal oxide；A first electrode layer is formed on the multiple device layer；Shape
At a pixel confining layer in a part of the first electrode layer；A light emitting organic layers are formed in the another of the first electrode layer
In a part；And a second electrode lay is formed on the light emitting organic layers and the pixel confining layer, wherein the pixel limits
Given layer along the first electrode layer towards the index distribution on a direction of the second electrode lay be from small to large.
In one embodiment of this invention, the step of forming the pixel confining layer includes: providing a resin material pattern
Layer is in a part of the first electrode layer, wherein the resin material pattern layer includes multiple photosensitive single groups and multiple senses
The more groups of light；One step of exposure is carried out to the resin material pattern layer, so that the resin material pattern layer forms the picture
Plain confining layers, wherein the multiple photosensitive single group is migrated to the lower part of the pixel confining layer, to be formed comprising described more
One first resin material of a photosensitive single group, wherein first resin material is adjacent to the first electrode layer；And wherein institute
It states multiple photosensitive more groups to migrate to the upper part of the pixel confining layer, to form include the multiple photosensitive more groups one
Second resin material, wherein second resin material is adjacent to the second electrode lay.
In one embodiment of this invention, in the step of resin material pattern layer is provided, the resin material figure
Pattern layer also includes a light absorbent, wherein the light absorbent is dispersed in the resin material pattern layer.
In one embodiment of this invention, the step of forming the multiple device layer further includes step: forming a buffer layer
On the first substrate；A grid is formed on the buffer layer；A gate insulating layer is formed in the grid and described slow
It rushes on layer；Formed a source electrode and one drain electrode on the gate insulating layer, wherein the active layers be formed in the source electrode with
Between the drain electrode；A passivation layer is formed in the gate insulating layer, the source electrode and the drain electrode；Form a colorized optical filtering
Piece is on the passivation layer；And a flatness layer is formed in the passivation layer and the colorized optical filtering on piece, wherein first electricity
Pole layer is formed on the flatness layer, and a part of the first electrode layer is through the flatness layer and the passivation
Layer, to be electrically connected the drain electrode.
In one embodiment of this invention, the manufacturing method of the display panel includes step: forming a second substrate and sets
On the second electrode lay.
Compared with prior art, display panel of the invention and its manufacturing method are mainly limited by the pixel
Layer along the first electrode layer towards the index distribution on a direction of the second electrode lay be from small to large, therefore
Can active layers by deflection of light far from thin film transistor (TFT), to avoid or reduce the thin film transistor (TFT) by the irradiation of light and
Generate the drift of significant threshold voltage, the adverse effect that on-off ratio becomes smaller and leakage current increases.
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate institute's accompanying drawings, makees
Detailed description are as follows:
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of the display panel of the embodiment of the present invention.
Fig. 2 is the flow diagram of the manufacturing method of the display panel of the embodiment of the present invention.
Fig. 3 A to 3K is the diagrammatic cross-section of each manufacturing step of the manufacturing method of the display panel of the embodiment of the present invention.
Fig. 4 is the partial cutaway schematic view of the pixel confining layer of the display panel of the embodiment of the present invention.
Specific embodiment
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.Furthermore the direction term that the present invention is previously mentioned, for example, above and below, top, bottom, front, rear, left and right, inside and outside, side, surrounding, in
Centre, it is horizontal, laterally, vertically, longitudinally, axial direction, radial direction, top layer or lowest level etc., be only the direction with reference to annexed drawings.Cause
This, the direction term used is to illustrate and understand the present invention, rather than to limit the present invention.
Fig. 1 is please referred to, Fig. 1 is the diagrammatic cross-section of the display panel 10 of the embodiment of the present invention.One embodiment of the invention
A kind of display panel 10 includes: a first substrate 11, multiple device layers 12, a first electrode layer 13, a light emitting organic layers 15, one
Pixel confining layer 14 and a second electrode lay 16.The first substrate 11 is, for example, a underlay substrate, can be used for carrying described more
A device layer 12, the first electrode layer 13, the light emitting organic layers 15, the pixel confining layer 14 and the second electrode lay
16.In one embodiment, the first substrate 11 is, for example, a flexible base board, a transparent substrates or a soft light substrate.
The multiple device layer 12 is located on the first substrate 11, wherein the multiple device layer 12 includes an active layers
121, the material of the active layers 121 includes a metal oxide.In one embodiment, the active layers 121 are, for example, film
An active layers (or active layer) for transistor.The material of the active layers 121 for example can be indium gallium zinc oxide (IGZO), hafnium
Indium-zinc oxide (HIZO), indium-zinc oxide IZO, zinc nitrogen oxides (ZNO), titanium zinc oxide (TZO) or zinc oxide
(ZnO)。
The first electrode layer 13 is located on the multiple device layer 12.The first electrode layer 13 can be with aftermentioned second
The collocation of electrode layer 16 forms an electrode group, gives the light emitting organic layers 15 for providing voltage to generate light 90.Implement one
In example, the first electrode layer 13 is an anode layer and the second electrode lay 16 is a cathode layer.In another embodiment,
The first electrode layer 13 is a cathode layer and the second electrode lay 16 is an anode layer.
The pixel confining layer 14 is located in a part of the first electrode layer 13.In one embodiment, the pixel
Confining layers (pixel definition layer) 14 are also referred to as stack layer (bank layer).The pixel confining layer 14
Such as can be used for that luminous organic material is made to flow into specified pixel region (such as R/G/B subpixel area).In addition, the pixel confining layer
14 along the first electrode layer 13 towards the index distribution on a direction of the second electrode lay 16 be from small to large.
Such index distribution can make the light 90 of the light emitting organic layers 15 by deviation and far from the active layers 121.According to this
Nie Er law (Snell'sLaw) is it is found that when light 90 is mobile from the small first medium of refractive index towards the big second medium of refractive index
When, light 90 can generate deviation, and be mobile towards the normal far from the interface between first medium and second medium.Change speech
It, when light 90 is issued from the light emitting organic layers 15 and when by the pixel confining layer 14, light 90 will by deviation, and
And far from active layers 121 of the position below the light emitting organic layers 15.Accordingly, it is possible to avoid or reduce the active layers 121
It is irradiated by light 90 and generates the drift of for example significant threshold voltage, the bad shadow that on-off ratio becomes smaller and leakage current increases
It rings.In one embodiment, the index distribution can have various patterns, such as the index distribution is incremental or ladder
Formula is from small to large.
The light emitting organic layers 15 are located on another part of the first electrode layer 13.The light emitting organic layers for example may be used
To be and then to generate light 90 by a manner of electroluminescent.In one embodiment, the pixel confining layer 14 is adjacent to the hair
Light organic layer 15.In one embodiment, the direction that the light emitting organic layers 15 are generally directed towards the first substrate 11 issues
Light 90.
The second electrode lay 16 is located in the light emitting organic layers 15 and the pixel confining layer 14.In an embodiment
In, the light emitting organic layers 15 pass through with the pixel confining layer 14 to be planarized, and the second electrode lay 16 is flat
It is set in the light emitting organic layers 15 and the pixel confining layer 14.
It is that the part of the pixel confining layer 14 of the display panel 10 of the embodiment of the present invention is cutd open please with reference to Fig. 1 and 4, Fig. 4
Face schematic diagram.In one embodiment, the pixel confining layer 14 may include one first resin material 141 and one second resin material
142.First resin material 141 includes multiple photosensitive single groups, wherein first resin material 141 is adjacent to described first
Electrode layer 13.Second resin material 142 includes multiple photosensitive more groups, wherein second resin material 141 is adjacent to institute
State the second electrode lay 16.It is noted that the refractive index of photosensitive single group is lower than the refractive index of photosensitive more groups,
Therefore the pixel confining layer 14, which can pass through, is arranged first resin material 141 and second resin material 142 to be formed
Above-mentioned index distribution.In another embodiment, the pixel confining layer 14 may include a light absorbent 143, the extinction
Material 143 is dispersed in the pixel confining layer 14.The light absorbent 143 can be used for absorbing from the light emitting organic layers
15 light 90 issued.In an example, the light absorbent 143 can be an extinction dyestuff or a light absorbing pigment.Another
In example, the light absorbent 143 is primarily useful for absorbing ultraviolet light, or visible light (such as purple light, indigo plant with short wavelength
Light and green light).Because relative to the light of long wavelength, the light of short wavelength has the active layers of the thin film transistor (TFT)
The adverse effect that the drift of more significant threshold voltage, on-off ratio become smaller and leakage current increases, therefore the extinction material can be passed through
The light of 143 absorption short wavelength of material avoids or reduces above-mentioned adverse effect in turn.
In one embodiment, the multiple device layer 12 may include device common in various display panels.In an example
In, the multiple device layer 12 may include a buffer layer 122, a grid 123, a gate insulating layer 124, a source electrode 125 and one
Drain 126, one passivation layer 127, a colored filter 128 and a flatness layer 129.The buffer layer 122 is located at first base
On plate 11.The grid 123 is located on the buffer layer 122.The gate insulating layer 124 is located at the grid 123 and described
On buffer layer 122.The source electrode 125 is located on the gate insulating layer 124 with the drain electrode 126 and the active layers 121
It is located between the source electrode 125 and the drain electrode 126.The passivation layer 127 is located at the gate insulating layer 124, the source electrode
125 with it is described drain electrode 126 on.The colored filter 128 is located on the passivation layer 127.The flatness layer 129 is located at described
On passivation layer 127 and the colored filter 128, wherein the first electrode layer 13 is located on the flatness layer 129, and institute
A part of first electrode layer 13 is stated through the flatness layer 129 and the passivation layer 127, to be electrically connected the drain electrode 126.
It is to be noted that the material of above-mentioned each device layer and production method can refer to common materials or production in general semiconductor technology
Method.
In one embodiment, the display panel further includes a second substrate 17, is located on the second electrode lay 16.?
In another embodiment, the second substrate 17 is, for example, a flexible base board, a transparent substrates or a soft light substrate.
It is the process of the manufacturing method 20 of the display panel of the embodiment of the present invention please with reference to Fig. 2 and Fig. 3 A to 3K, Fig. 2
Schematic diagram and Fig. 3 A to 3K are the section signals of each manufacturing step of the manufacturing method 20 of the display panel of the embodiment of the present invention
Figure.The manufacturing method 20 of the display panel of the embodiment of the present invention includes step 21 to 26: providing a first substrate (step 21)；Shape
On the first substrate at multiple device layers, wherein the multiple device layer includes an active layers, the material of the active layers
Include a metal oxide (step 22)；Form a first electrode layer (step 23) on the multiple device layer；Form a picture
Plain confining layers (step 24) in a part of the first electrode layer；A light emitting organic layers are formed in the first electrode layer
(step 25) on another part；And a second electrode lay is formed on the light emitting organic layers and the pixel confining layer, wherein
The pixel confining layer is towards the index distribution on a direction of the second electrode lay along the first electrode layer
(step 26) from small to large.
Please with reference to Fig. 2 and 3A, the step 21 of the manufacturing method 20 of the display panel of the embodiment of the present invention is: providing one
First substrate 11.In one embodiment, the first substrate 11 is, for example, that a flexible base board, a transparent substrates or one are flexible saturating
Photopolymer substrate.
Please with reference to Fig. 2 and Fig. 3 B to 3I, the step 22 of the manufacturing method 20 of the display panel of the embodiment of the present invention is:
Multiple device layers 12 are formed on the first substrate 11, wherein the multiple device layer 12 includes an active layers 121, the master
The material of dynamic layer 121 includes a metal oxide.In one embodiment, the active layers 121 are, for example, the one of thin film transistor (TFT)
Active layers (or active layer).The material of the active layers 121 for example can be indium gallium zinc oxide (IGZO), hafnium indium-zinc oxide
(HIZO), indium-zinc oxide IZO, zinc nitrogen oxides (ZNO), titanium zinc oxide (TZO) or zinc oxide (ZnO).
In one embodiment, the step 22 for forming the multiple device layer further includes step: forming a buffer layer 122 in institute
(as shown in Figure 3B) is stated on first substrate 11；A grid 123 is formed on the buffer layer 122 (as shown in Figure 3 C)；Form one
Gate insulating layer 124 is on the grid 123 and the buffer layer 122 (as shown in Fig. 3 D and 3E)；Form a source electrode 125 and one
Drain electrode 126 is on the gate insulating layer 124, wherein the active layers 121 are formed in the source electrode 125 and the drain electrode
Between 126 (as illustrated in Figure 3 F)；A passivation layer 127 is formed in the gate insulating layer 124, the source electrode 125 and the drain electrode
On 126 (as shown in Figure 3 G)；A colored filter 128 is formed on the passivation layer 127 (as shown in figure 3h)；And formation one is flat
Smooth layer 129 the passivation layer 127 on the colored filter 128 (as shown in figure 3h).It is to be noted that above-mentioned each device
The material and production method of part layer can refer to common materials or production method in general semiconductor technology.In one embodiment, one
Etch stop layer 1211 can be set in the active layers 121 (as shown in Fig. 3 D and 3E).
Please with reference to Fig. 2 and Fig. 3 I, the step 23 of the manufacturing method 20 of the display panel of the embodiment of the present invention is: being formed
One first electrode layer 13 is on the multiple device layer 12.In one embodiment, the first electrode layer 13 is formed in described
On flatness layer 129, and a part of the first electrode layer 13 runs through the flatness layer 129 and the passivation layer 127, with electricity
Property connection it is described drain electrode 126.In an example, for example, can be located at it is described drain electrode 126 top the flatness layer 129 with it is described
The part of passivation layer 127 carries out selective etch, the first electrode layer 13 is formed by way of deposition later, so that described
First electrode layer 13 is electrically connected to the drain electrode 126.
Please with reference to Fig. 2 and Fig. 3 J, the step 24 of the manufacturing method 20 of the display panel of the embodiment of the present invention is: being formed
One pixel confining layer 14 is in a part of the first electrode layer 13.In one embodiment, the pixel confining layer (pixel
Definition layer) 14 also referred to as stack layer (bank layer).The pixel confining layer 14 for example can be used for making to have
Machine luminescent material flows into specified pixel region (such as R/G/B subpixel area).In addition, the pixel confining layer 14 is along described
One electrode layer 13 towards the index distribution on a direction of the second electrode lay 16 be from small to large.Such refractive index
Distribution can make the light 90 of the light emitting organic layers 15 by deviation and far from the active layers 121.According to Snell's law
(Snell's Law) it is found that when light is mobile towards the big second medium of refractive index from the small first medium of refractive index, light meeting
Deviation is generated, and is mobile towards the normal far from the interface between first medium and second medium.In other words, when light 90 from
The light emitting organic layers 15 issue and when by the pixel confining layers 14, and light 90 will be by deviation, and separate position is in institute
State the active layers 121 of 15 lower section of light emitting organic layers.It is shone accordingly, it is possible to avoid or reduce the active layers 121 by light 90
It penetrates and generates the drift of for example significant threshold voltage, the adverse effect that on-off ratio becomes smaller and leakage current increases.
Please with reference to Fig. 2 and Fig. 3 K, the step 25 of the manufacturing method 20 of the display panel of the embodiment of the present invention is: being formed
One light emitting organic layers 15 are on another part of the first electrode layer 13.The light emitting organic layers 15, which for example can be, passes through electricity
The mode of photoluminescence, and then generate light 90.In one embodiment, the pixel confining layer 14 is adjacent to the light emitting organic layers
15.In one embodiment, the direction that the light emitting organic layers 15 are generally directed towards the first substrate 11 emits beam 90.
Please with reference to Fig. 2 and Fig. 3 K, the step 26 of the manufacturing method 20 of the display panel of the embodiment of the present invention is: being formed
One the second electrode lay 16 is on the light emitting organic layers 15 and the pixel confining layer 14.In one embodiment, described shine has
Machine layer 15 and the pixel confining layer 14 are by planarizing, and the second electrode lay 16 is flat and is set to described shine
On organic layer 15 and the pixel confining layer 14.
Please with reference to Fig. 2,3K and 4, in one embodiment, the step 24 for forming the pixel confining layer 14 can for example be wrapped
Contain: a resin material pattern layer is provided in a part of the first electrode layer 13, wherein the resin material pattern layer packet
Containing multiple photosensitive single groups and multiple photosensitive more groups；One step of exposure is carried out to the resin material pattern layer, so that described
Resin material pattern layer forms the pixel confining layer 14, wherein the multiple photosensitive single group is migrated to the pixel confining layer
14 lower part, to form one first resin material 141 comprising the multiple photosensitive single group, wherein first resinous wood
Material 141 is adjacent to the first electrode layer 13；Multiple photosensitive more groups described in and its migrate upper to the pixel confining layer 14
Part, to form one second resin material 142 for including the multiple photosensitive more groups, wherein second resin material 142
The neighbouring the second electrode lay 16.Specifically, by exposure process light be to be shone from the top of resin material pattern layer
It penetrates, and reaction speed of the second resin material with photosensitive more groups in exposure process is than first with photosensitive single group
Resin material is big, therefore the second resin material 142 with photosensitive more groups is migrated to the pixel because of density unevenness and limited
The upper part of given layer 14, and the first resin material 141 with photosensitive single group are migrated to the lower part of the pixel confining layer 14
Point.By the above-mentioned means, the second resin material 142 with photosensitive more groups can be solid in the upper part of the pixel confining layer 14
Change, and the first resin material 141 with photosensitive single group can be partially cured under the pixel confining layer 14.Another party
Face causes since 142 refractive index of the second resin material with photosensitive more groups is higher than the first resin material of photosensitive single group
The pixel confining layer is along the first electrode layer towards an index distribution on a direction of the second electrode lay
It is from small to large.
It is noted that the resin material pattern layer also wraps in the step of providing the resin material pattern layer
Containing a light absorbent 143, wherein the light absorbent is dispersed in the resin material pattern layer.The light absorbent
143 can be used for absorbing the light 90 issued from the light emitting organic layers 15.In an example, the light absorbent 143 be can be
One extinction dyestuff or a light absorbing pigment.In another example, the light absorbent 143 is primarily useful for absorbing ultraviolet light, or
Visible light (such as purple light, blue light and green light) with short wavelength.Because relative to the light of long wavelength, the light of short wavelength
There is the drift of more significant threshold voltage, on-off ratio to become smaller the active layers of the thin film transistor (TFT) and leakage current increases
Adverse effect.
In conclusion display panel and its manufacturing method of the invention, mainly by the pixel confining layer along institute
State first electrode layer towards the index distribution on a direction of the second electrode lay be from small to large, therefore can be by light
Active layers of the deviation far from thin film transistor (TFT), to avoid or reduce the thin film transistor (TFT) generated by the irradiation of light it is significant
The drift of threshold voltage, the adverse effect that on-off ratio becomes smaller and leakage current increases.
The present invention is described by above-mentioned related embodiment, however above-described embodiment is only to implement example of the invention.
It must be noted that, it has been disclosed that embodiment be not limiting as the scope of the present invention.On the contrary, being contained in the spirit of claims
And range modification and impartial setting be included in the scope of the present invention.
Claims (10)
1. a kind of display panel, it is characterised in that: the display panel includes:
One first substrate；
Multiple device layers, if on the first substrate, wherein the multiple device layer includes an active layers, the active layers
Material includes a metal oxide；
One first electrode layer is located on the multiple device layer；
One pixel confining layer is located in a part of the first electrode layer；
One light emitting organic layers are located on another part of the first electrode layer；And
One the second electrode lay is located in the light emitting organic layers and the pixel confining layer,
Wherein the pixel confining layer is along the first electrode layer towards the refraction on a direction of the second electrode lay
Rate distribution is from small to large.
2. display panel as described in claim 1, it is characterised in that: the pixel confining layer includes:
One first resin material, comprising multiple photosensitive single groups, wherein first resin material is adjacent to the first electrode layer；
And
One second resin material includes multiple photosensitive more groups, wherein second resin material is adjacent to the second electrode lay.
3. display panel as claimed in claim 2, it is characterised in that: the pixel confining layer includes a light absorbent, described
Light absorbent is dispersed in the pixel confining layer.
4. display panel as described in claim 1, it is characterised in that: the multiple device layer further includes:
One buffer layer, if on the first substrate；
One grid is located on the buffer layer；
One gate insulating layer is located on the grid and the buffer layer；
One source electrode and a drain electrode, if on the gate insulating layer and the active layers are located at the source electrode and the drain electrode
Between；
One passivation layer is located in the gate insulating layer, the source electrode and the drain electrode；
One colored filter is located on the passivation layer；And
One flatness layer is located at the passivation layer and the colorized optical filtering on piece, wherein the first electrode layer be located at it is described flat
On layer, and a part of the first electrode layer runs through the flatness layer and the passivation layer, to be electrically connected the drain electrode.
5. display panel as described in claim 1, it is characterised in that: the display panel further includes a second substrate, is located at
On the second electrode lay.
6. a kind of manufacturing method of display panel, it is characterised in that: the manufacturing method of the display panel includes step:
One first substrate is provided；
Multiple device layers are formed on the first substrate, wherein the multiple device layer includes an active layers, the active layers
Material include a metal oxide；
A first electrode layer is formed on the multiple device layer；
A pixel confining layer is formed in a part of the first electrode layer；
A light emitting organic layers are formed on another part of the first electrode layer；And
A second electrode lay is formed on the light emitting organic layers and the pixel confining layer,
Wherein the pixel confining layer is along the first electrode layer towards the refraction on a direction of the second electrode lay
Rate distribution is from small to large.
7. the manufacturing method of display panel as claimed in claim 6, it is characterised in that: the step of forming the pixel confining layer
Include:
A resin material pattern layer is provided in a part of the first electrode layer, wherein the resin material pattern layer includes
Multiple photosensitive single groups and multiple photosensitive more groups；
One step of exposure is carried out to the resin material pattern layer, so that the resin material pattern layer forms the pixel and limits
Layer,
Wherein the multiple photosensitive single group is migrated to the lower part of the pixel confining layer, to be formed comprising the multiple photosensitive
One first resin material of single group, wherein first resin material is adjacent to the first electrode layer；And
Wherein the multiple photosensitive more groups are migrated to the upper part of the pixel confining layer, to be formed comprising the multiple photosensitive
One second resin material of more groups, wherein second resin material is adjacent to the second electrode lay.
8. the manufacturing method of display panel as claimed in claim 7, it is characterised in that: providing the resin material pattern layer
The step of in, the resin material pattern layer also includes a light absorbent, wherein the light absorbent is dispersed in the tree
In rouge patterns of material layer.
9. the manufacturing method of display panel as claimed in claim 6, it is characterised in that: the step of forming the multiple device layer
Further include step:
Form a buffer layer on the first substrate；
A grid is formed on the buffer layer；
A gate insulating layer is formed on the grid and the buffer layer；
Formed a source electrode and one drain electrode on the gate insulating layer, wherein the active layers be formed in the source electrode with it is described
Between drain electrode；
A passivation layer is formed in the gate insulating layer, the source electrode and the drain electrode；
A colored filter is formed on the passivation layer；And
A flatness layer is formed in the passivation layer and the colorized optical filtering on piece, wherein the first electrode layer is formed in described put down
On smooth layer, and a part of the first electrode layer runs through the flatness layer and the passivation layer, to be electrically connected the leakage
Pole.
10. the manufacturing method of display panel as claimed in claim 6, it is characterised in that: the manufacturing method of the display panel
Include step: forming a second substrate and be located on the second electrode lay.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811007253.6A CN109244110A (en) | 2018-08-31 | 2018-08-31 | Display panel and its manufacturing method |
| PCT/CN2018/109435 WO2020042282A1 (en) | 2018-08-31 | 2018-10-09 | Display panel and manufacturing method therefor |
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| CN201811007253.6A CN109244110A (en) | 2018-08-31 | 2018-08-31 | Display panel and its manufacturing method |
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| WO (1) | WO2020042282A1 (en) |
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| CN103500754A (en) * | 2013-09-29 | 2014-01-08 | 京东方科技集团股份有限公司 | OLED (Organic Light Emitting Diode) display panel and production method thereof as well as display device |
| CN103915482A (en) * | 2014-03-27 | 2014-07-09 | 京东方科技集团股份有限公司 | Organic electroluminescent display panel, manufacturing method thereof and display device |
| US20160087245A1 (en) * | 2014-09-19 | 2016-03-24 | Samsung Display Co., Ltd. | Organic light emitting diode device |
| CN105575997A (en) * | 2014-10-30 | 2016-05-11 | 三星显示有限公司 | Transparent display substrate and transparent display device |
| CN107037638A (en) * | 2015-07-31 | 2017-08-11 | 群创光电股份有限公司 | Display panel and display device |
| CN107968106A (en) * | 2017-05-11 | 2018-04-27 | 广东聚华印刷显示技术有限公司 | OLED display panel and preparation method thereof and application |
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2018
- 2018-08-31 CN CN201811007253.6A patent/CN109244110A/en active Pending
- 2018-10-09 WO PCT/CN2018/109435 patent/WO2020042282A1/en active Application Filing
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|---|---|---|---|---|
| CN103500754A (en) * | 2013-09-29 | 2014-01-08 | 京东方科技集团股份有限公司 | OLED (Organic Light Emitting Diode) display panel and production method thereof as well as display device |
| CN103915482A (en) * | 2014-03-27 | 2014-07-09 | 京东方科技集团股份有限公司 | Organic electroluminescent display panel, manufacturing method thereof and display device |
| US20160087245A1 (en) * | 2014-09-19 | 2016-03-24 | Samsung Display Co., Ltd. | Organic light emitting diode device |
| CN105575997A (en) * | 2014-10-30 | 2016-05-11 | 三星显示有限公司 | Transparent display substrate and transparent display device |
| CN107037638A (en) * | 2015-07-31 | 2017-08-11 | 群创光电股份有限公司 | Display panel and display device |
| CN107968106A (en) * | 2017-05-11 | 2018-04-27 | 广东聚华印刷显示技术有限公司 | OLED display panel and preparation method thereof and application |
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| WO2020042282A1 (en) | 2020-03-05 |
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