CN109243968B - Monitoring system and monitoring method of laser crystallization device - Google Patents
Monitoring system and monitoring method of laser crystallization device Download PDFInfo
- Publication number
- CN109243968B CN109243968B CN201810734689.9A CN201810734689A CN109243968B CN 109243968 B CN109243968 B CN 109243968B CN 201810734689 A CN201810734689 A CN 201810734689A CN 109243968 B CN109243968 B CN 109243968B
- Authority
- CN
- China
- Prior art keywords
- laser beam
- laser
- auxiliary layer
- crystallization apparatus
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2375—Hybrid lasers
Abstract
The invention relates to a monitoring system and a monitoring method of a laser crystallization device, wherein the monitoring system comprises a reflecting mirror, and the monitoring system of the laser crystallization device comprises the following components: a laser crystallization device including a light source that emits a first laser beam and a mirror that receives incidence of at least a portion of the first laser beam and emits a second laser beam; a stage having a first surface and a second surface facing each other, the first surface being irradiated with a first laser beam and a second laser beam; an auxiliary layer disposed on any one of the first and second surfaces of the stage, receiving an incidence of the first laser beam, and reflecting at least a portion of the first laser beam toward the mirror; and a camera overlapping the auxiliary layer and disposed adjacent to the second face, measuring light intensities of the first and second laser beams.
Description
Technical Field
The invention relates to a monitoring system and a monitoring method of a laser crystallization device.
Background
In general, an organic light emitting display device, a liquid crystal display device, or the like controls whether or not each pixel emits light or the degree of light emission using a thin film transistor. Such a thin film transistor includes a semiconductor layer, a gate electrode, a source/drain electrode, and the like, and as the semiconductor layer, mainly polysilicon in which amorphous silicon is crystallized is used.
A thin film transistor substrate including the thin film transistor described above or a display device using the thin film transistor substrate is manufactured by a process of forming an amorphous silicon (a-Si) thin film on a substrate and crystallizing the amorphous silicon thin film into a polycrystalline silicon (P-Si) thin film. As a method for crystallizing an amorphous silicon film into a polycrystalline silicon film, a method of irradiating a laser beam to the amorphous silicon film can be used.
At this time, a part of the laser beam is reflected at the surface of the amorphous silicon thin film, so that energy loss occurs. To reduce such energy loss, the reflected laser beam may be re-irradiated to the surface of the amorphous silicon thin film through a mirror. Depending on the light intensity, irradiation angle, and the like of the entire laser beam including the re-irradiated laser beam, the crystallinity of the amorphous silicon thin film and the efficiency of crystallization activation energy (crystallization activation energy) become different, and therefore precise alignment (alignment) between the constituent elements such as the mirror is required.
Disclosure of Invention
The invention aims to provide a monitoring system and a monitoring method of a laser crystallization device comprising a reflecting mirror.
The monitoring system of the laser crystallization apparatus according to the present invention for achieving the object as described above includes: a laser crystallization device including a light source that emits a first laser beam and a mirror that receives incidence of at least a portion of the first laser beam and emits a second laser beam; a stage having a first face and a second face facing each other, the first face being irradiated with a first laser beam and a second laser beam; an auxiliary layer disposed on any one of the first and second surfaces of the stage, receiving an incidence of the first laser beam, and reflecting at least a portion of the first laser beam toward the mirror; and a camera overlapping the auxiliary layer and disposed adjacent to the second face, measuring light intensities of the first and second laser beams.
The auxiliary layer has a reflectivity of about 3% to 60%.
The auxiliary layer is arranged between the workbench and the camera.
The auxiliary layer and the camera are arranged at intervals with the workbench sandwiched therebetween.
The auxiliary layer is disposed on the entire surface of the table.
The auxiliary layer is composed of a plurality of layers.
The auxiliary layer has a plurality of slits transmitting the first laser beam.
The angle formed by the first laser beam irradiated to the stage and the normal line perpendicular to the first face of the stage is about 5 degrees to about 60 degrees.
The monitoring method of the laser crystallization device according to the invention comprises the following steps: arranging an auxiliary layer on any one of a first surface and a second surface of the workbench, which are opposite to each other; a camera is arranged overlapping the auxiliary layer and adjacent to the second face; emitting a first laser beam to a first face of the table; at least a portion of the first laser beam is reflected by the auxiliary layer to the mirror; the second laser beam is emitted to the first face of the stage by means of a mirror; and measuring the light intensities of the first laser beam and the second laser beam by the camera.
The auxiliary layer has a reflectivity of about 3% to 60%.
The auxiliary layer is arranged between the workbench and the camera.
The auxiliary layer and the camera are arranged at intervals with the workbench sandwiched therebetween.
The angle formed by the first laser beam and the normal line perpendicular to the first face of the table is 5 degrees to 60 degrees.
The monitoring system and the monitoring method of the laser crystallization apparatus according to the present invention include an auxiliary layer disposed on a table, so that the light intensity of a laser beam emitted from the laser crystallization apparatus including a mirror can be precisely measured.
Drawings
Fig. 1 is a schematic view of a laser crystallization apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic diagram showing laser crystallization of an amorphous silicon thin film.
Fig. 3 is a cross-sectional view showing a monitoring system of a laser crystallization apparatus according to an embodiment of the present invention.
Fig. 4 is a cross-sectional view showing a monitoring system of a conventional laser crystallization apparatus.
Fig. 5 is a cross-sectional view showing a monitoring system of a laser crystallization apparatus according to another embodiment of the present invention.
Fig. 6 is a cross-sectional view showing a monitoring system of a laser crystallization apparatus according to still another embodiment of the present invention.
Fig. 7 is a cross-sectional view showing a monitoring system of a laser crystallization apparatus according to still another embodiment of the present invention.
Fig. 8 is a plan view illustrating the auxiliary layer of fig. 7.
Symbol description
L1: first laser beam L2: second laser beam
10: laser crystallization device 110: light source
120: optical system 130: mirror
140: mirror 150: chamber chamber
210: substrate table 220: substrate board
221: amorphous silicon thin film 222: polycrystalline silicon thin film
310: stage 320: camera head
330. 331, 332, 333: auxiliary layer
Detailed Description
Advantages, features and methods of accomplishing the same may become apparent by reference to the accompanying drawings and the embodiments described in detail. However, the present invention is not limited to the embodiments disclosed below, which may be embodied in various forms different from each other, but the present embodiments are provided for complete disclosure of the present invention and for complete notification of the scope of the present invention to those having a basic knowledge level in the art to which the present invention pertains, and the present invention is defined only by the scope of the claims. Accordingly, in some embodiments, well known process steps, well known device structures, and well known techniques have not been described in detail in order to not obscure the invention. Throughout the specification, the same reference numerals refer to the same constituent elements.
In the drawings, thicknesses are enlarged to clearly represent a plurality of layers and regions. Like parts are given the same reference numerals throughout the specification. When a layer, film, region, sheet, or the like is referred to as being "on" another portion, it includes not only the case of being "immediately above" another portion, but also the case of sandwiching another portion. Conversely, where a portion is referred to as being "immediately above" another portion, that portion is not the other portion in the middle. Further, when a portion of a layer, a film, a region, a plate, or the like is referred to as being "under" another portion, it includes not only the case of being "immediately under" another portion but also the case of sandwiching another portion. Conversely, where a portion is referred to as being "immediately below" another portion, that portion is not the other portion in the middle.
Spatially relative terms "lower", "below", "lower", "above" and "upper" and the like may be used as illustrated to conveniently describe the relationship between one element or component and another element or component. Spatially relative terms, when used or operated upon in addition to the orientation shown in the figures, should be understood to encompass different orientations of the elements relative to each other. For example, when an element illustrated in the drawings is turned over, elements described as "below" or "beneath" another element would then be located "above" the other element. Thus, the exemplary term "below" may include both upward and downward directions. The elements may be arranged in different directions, whereby spatially relative terms may be construed in accordance with the arrangement direction.
In the present specification, the terms first, second, third, etc. may be used to describe various constituent elements, but these constituent elements are not limited to the above-described terms. The above terms are mainly used for the purpose of distinguishing one component from another. For example, a first component may be named a second component or a third component, etc., and similarly, a second component or a third component may be named alternately without departing from the scope of the claims of the present invention.
Unless otherwise defined, all terms (including technical and scientific terms) used in this specification can be used in the meaning commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used terms defined on a dictionary are not interpreted abnormally or excessively unless specifically defined.
An embodiment of the present invention will be described below with reference to fig. 1 to 4.
Fig. 1 is a schematic view of a laser crystallization apparatus, and fig. 2 is a schematic view showing laser crystallization of an amorphous silicon thin film.
Referring to fig. 1 and 2, the laser crystallization apparatus 10 includes: a light source 110 for generating a laser beam L; an optical system 120 for optically transforming the laser beam L to output a first laser beam L1; and a chamber 150 to which the transformed first laser beam L1 is irradiated. A substrate 220 and a substrate stage 210 on which the substrate 220 is mounted are disposed in the chamber 150, and the substrate 220 is formed with an amorphous silicon thin film 221 laser crystallized by being irradiated with the converted first laser beam L1.
The laser beam L generated from the light source 110 may include P polarized light and S polarized light, and may be an excimer laser (excimer laser) beam that induces a phase change of the amorphous silicon thin film 221. That is, the light source 110 according to an embodiment of the present invention may be an excimer laser. However, the present invention is not limited thereto, and the light source 110 may be a yttrium aluminum garnet (YAG: yttrium Aluminum Garnet) laser, a glass laser, or Yttrium Vanadate (YVO) 4 : yttrium Orthovanadate), argon (Ar) laser. The laser beam L is optically converted in the optical system 120, and the optically converted first laser beam L1 crystallizes the amorphous silicon thin film 221 formed on the substrate 220. The laser beam L and the first laser beam L1 may be in a plurality of beam patterns traveling side by side in a side-by-side arrangement.
The amorphous silicon thin film 221 may be formed to a thickness of 25nm to 80nm by a low pressure chemical deposition method, an atmospheric pressure chemical deposition method, a plasma enhanced chemical deposition method (PECVD: plasma Enhanced Chemical Vapor Deposition), a sputtering (sputtering) method, a vacuum deposition method (vacuum evaporation), or the like. Also, the amorphous silicon thin film 221 may use silicon or a silicon-based substance (e.g., si x Ge 1-x ) And is formed.
The optical system 120 includes a plurality of lenses (not shown) and a mirror 130 that change the path of the laser beam L, and optically converts the laser beam L to emit a first laser beam L1. Further, although not shown, the optical system 120 may include at least one Half Wave Plate (HWP: halowave Plate) for changing a polarization axis direction of the laser beam L incident from the light source 110, and may further include at least one polarizing beam splitter (PBS: polarization Beam Splitter) for reflecting and transmitting a portion of the laser beam L.
The optical system 120 according to an embodiment of the present invention further includes a mirror 140, and the mirror 140 receives at least a portion of the first laser beam L1 and emits the second laser beam L2. That is, a part of the first laser beam L1 is reflected on the surface of the amorphous silicon thin film 221 on the substrate 220 and is incident on the mirror 140, and the mirror 140 reflects the beam again to emit the second laser beam L2 toward the amorphous silicon thin film 221 on the substrate 220.
Accordingly, the laser crystallization apparatus 10 including the mirror 140 according to an embodiment of the present invention emits the second laser beam L2 together with the first laser beam L1, unlike the case where the laser crystallization apparatus not including the mirror 140 emits only the first laser beam L1 toward the amorphous silicon thin film 221 on the substrate 220. That is, the laser beam reflected on the surface of the amorphous silicon thin film 221 is re-incident on the amorphous silicon thin film 221, so that the crystallinity and the efficiency of crystallization activation energy of the amorphous silicon thin film 221 can be improved.
The chamber 150 may include nitrogen N according to the nature of the process, the use of the user, etc 2 Air (air), a mixed gas, or the like, and may be depressurized or pressurized, or may be in a vacuum state. The chamber 150 may be an open type or a closed type isolated from the outside air.
A substrate 220 and a substrate stage 210 on which the substrate 220 is mounted are disposed in the chamber 150, and the substrate 220 is formed with an amorphous silicon thin film 221 crystallized by irradiation of a first laser beam L1 and a second laser beam L2. The substrate stage 210 moves in the horizontal direction so that the first laser beam L1 and the second laser beam L2 are irradiated to the entire area of the substrate 220.
Specifically, as shown in fig. 2, during the irradiation of the first laser beam L1 and the second laser beam L2, the substrate stage 210 constantly moves the substrate 220 in the arrow direction, so that the first laser beam L1 and the second laser beam L2 are uniformly irradiated to the amorphous silicon thin film 221 on the substrate 220. The amorphous silicon thin film 221 irradiated with the first laser beam L1 and the second laser beam L2 is crystallized into a polycrystalline silicon thin film 222. The crystallization principle of the amorphous silicon thin film 221 is to melt and recrystallize amorphous silicon by rapidly increasing the temperature of amorphous silicon by irradiating a first laser beam L1 and a second laser beam L2 for several nanoseconds (nano second) and then cooling the amorphous silicon.
Polycrystalline silicon is also called polycrystalline silicon (Po-Si), and Field effect mobility (Field-effect mobility) is hundreds of times higher than silicon, and signal processing capability is also excellent under high frequency conditions, so that it can be used for display devices such as organic light emitting display devices.
Fig. 3 is a cross-sectional view showing a monitoring system of a laser crystallization apparatus according to an embodiment of the present invention, and fig. 4 is a cross-sectional view showing a monitoring system of a conventional laser crystallization apparatus.
Referring to fig. 3, a monitoring system of a laser crystallization apparatus 10 according to an embodiment of the present invention includes: a laser crystallization device 10; a stage 310 to which a first laser beam L1 and a second laser beam L2 emitted from the laser crystallization apparatus 10 are irradiated; an auxiliary layer 330 disposed at a lower portion of the stage 310; and the camera 320 is disposed at a lower portion of the auxiliary layer 330. At this time, the upper surface of the stage 310 is defined as a first surface S1, and the lower surface of the stage 310 is defined as a second surface S2.
The laser crystallization apparatus 10 includes the reflecting mirror 140 as described above, and emits the first laser beam L1 and the second laser beam L2 toward the first surface S1 of the stage 310.
The stage 310 is disposed at a predetermined distance from the laser crystallization device 10, and receives the first laser beam L1 and the second laser beam L2 from the laser crystallization device 10. Unlike the substrate stage 210 shown in fig. 1 and 2, the stage 310 is configured to monitor the laser crystallization apparatus 10, and the substrate 220 on which the amorphous silicon thin film 221 is formed is not disposed on the stage 310.
An auxiliary layer 330 is disposed on the second surface S2 of the stage 310. At this time, the auxiliary layer 330 has a similar reflectivity to the amorphous silicon thin film 221. For example, the auxiliary layer 330 may have substantially the same reflectivity as the amorphous silicon thin film 221. For example, the auxiliary layer 330 may have a reflectivity of about 3% to 60%. For example, in the case where the amorphous silicon thin film 221 has a reflectivity of 60%, the auxiliary layer 330 may also have a reflectivity of 60%.
The camera 320 is disposed adjacent to the second surface S2 of the stage 310, and measures light intensities of the first laser beam L1 and the second laser beam L2 emitted from the laser crystallization device 10. At this time, the camera 320 can be moved up and down to adjust the distance from the laser crystallization apparatus 10. That is, in order to perform focusing when measuring the light intensities of the first laser beam L1 and the second laser beam L2, the interval between the camera 320 and the laser crystallization device 10 may be adjusted.
By the light intensity measured by the camera 320, the user can precisely align (align) the components of the laser crystallization apparatus 10 to improve the crystallinity and the efficiency of crystallization activation energy of the amorphous silicon thin film 221 by the laser crystallization apparatus 10.
As shown in fig. 4, if the auxiliary layer 330 is not formed on the stage 310 for monitoring, most of the first laser beam L1 incident on the stage 310 is not reflected but passes through the stage 310. That is, the substrate 220 on which the amorphous silicon thin film 221 is formed is not disposed on the stage 310 for monitoring, and thus reflection of the first laser beam L1 hardly occurs. Therefore, as in the actual step of crystallizing the amorphous silicon thin film 221, a part of the first laser beam L1 is not incident on the mirror 140, and the second laser beam L2 is not emitted.
In other words, unlike the case where both the first laser beam L1 and the second laser beam L2 are emitted to the substrate stage 210 in the process of crystallizing the amorphous silicon thin film 221 as shown in fig. 1 and 2, only the first laser beam L1 is emitted to the stage 310 during the monitoring of the laser crystallization apparatus 10. Therefore, the light intensity of the second laser beam L2 emitted from the laser crystallization apparatus 10 in the actual crystallization process of the amorphous silicon thin film 221 cannot be measured, and thus it is difficult to realize precise monitoring of the laser crystallization apparatus 10 including the reflecting mirror 140.
The monitoring system of the laser crystallization apparatus 10 according to an embodiment of the present invention can measure not only the light intensity of the first laser beam L1 but also the light intensity of the second laser beam L2 by disposing the auxiliary layer 330 having a similar reflectivity to the amorphous silicon thin film 221 on the second surface S2 of the stage 310. Therefore, the laser crystallization apparatus 10 including the reflecting mirror 140 can be easily monitored, and accordingly, the user can precisely align (align) the components of the laser crystallization apparatus 10, and the crystallinity and the efficiency of crystallization activation energy of the amorphous silicon thin film 221 by the laser crystallization apparatus 10 can be improved.
The monitoring method of the laser crystallization apparatus 10 according to an embodiment of the present invention is described in order as follows.
First, the auxiliary layer 330 is disposed on the second surface S2 of the stage 310. Although the auxiliary layer 330 is illustrated as being disposed to overlap only a portion of the stage 310 according to an embodiment of the present invention, it is not limited thereto and the auxiliary layer 330 may be disposed on the entire surface of the second surface S2 of the stage 310.
Next, the camera 320 is disposed to overlap with the auxiliary layer 330. At this time, the camera 320 is arranged apart from the laser crystallization apparatus 10 with the stage 310 sandwiched therebetween.
Next, the laser crystallization device 10 disposed adjacent to the first surface S1 of the stage 310 emits the first laser beam L1 toward the first surface S1 of the stage 310. A part of the first laser beam L1 incident on the first surface S1 of the stage 310 is reflected by the auxiliary layer 330 and then enters the mirror 140 of the laser crystallization apparatus 10. At this time, a part of the first laser beam L1 reflected by the auxiliary layer 330 is incident on the stage 310 in such a manner that the first laser beam L1 has a predetermined angle in order to be incident on the mirror 140. For example, the angle α formed by the first laser beam L1 and the normal VL perpendicular to the first surface S1 of the stage 310 may be about 5 degrees to 60 degrees. Accordingly, a portion of the reflected first laser beam L1 may be incident on the mirror 140.
Next, the mirror 140 receives the incidence of a part of the first laser beam L1 and emits the second laser beam L2 toward the first surface S1 of the stage 310. That is, the laser crystallization apparatus 10 including the mirror 140 emits not only the first laser beam L1 but also the second laser beam L2 to the stage 310.
Next, the light intensities of the first laser beam L1 and the second laser beam L2 incident on the stage 310 are measured by the camera 320. By the light intensity measured by the camera 320, the user can precisely align (align) the components of the laser crystallization apparatus 10 to improve the crystallinity and the efficiency of crystallization activation energy of the amorphous silicon thin film 221 by the laser crystallization apparatus 10.
Hereinafter, another embodiment according to the present invention will be described with reference to fig. 5. For convenience of explanation, the explanation of the same constituent elements as those of the embodiment of the present invention is omitted.
Fig. 5 is a cross-sectional view showing a monitoring system of a laser crystallization apparatus according to another embodiment of the present invention.
Referring to fig. 5, the monitoring system of the laser crystallization apparatus 10 according to another embodiment of the present invention includes an auxiliary layer 331 disposed on an upper surface, i.e., a first surface S1, of the stage 310.
The auxiliary layer 331 has a similar reflectivity to the amorphous silicon thin film 221. For example, the auxiliary layer 331 may have substantially the same reflectivity as the amorphous silicon thin film 221. The auxiliary layer 331 may have a reflectivity of about 3% to 60%. For example, in the case where the amorphous silicon thin film 221 has a reflectivity of 60%, the auxiliary layer 331 may also have a reflectivity of 60%.
Further, the auxiliary layer 331 according to another embodiment of the present invention may be disposed on the entire surface of the stage 310. However, the present invention is not limited thereto, and the auxiliary layer 331 may be disposed only on a portion of the first surface S1 of the stage 310.
The monitoring system of the laser crystallization apparatus 10 according to another embodiment of the present invention can measure not only the light intensity of the first laser beam L1 but also the light intensity of the second laser beam L2 by disposing the auxiliary layer 331 having a similar reflectivity to the amorphous silicon thin film 221 on the first surface S1 of the stage 310. Therefore, the laser crystallization apparatus 10 including the reflecting mirror 140 can be easily monitored, and accordingly, the user can precisely align (align) the components of the laser crystallization apparatus 10, and the crystallinity and the efficiency of crystallization activation energy of the amorphous silicon thin film 221 by the laser crystallization apparatus 10 can be improved.
A further embodiment of the present invention will be described below with reference to fig. 6. For convenience of explanation, the explanation of the same configuration as that of an embodiment of the present invention is omitted.
Fig. 6 is a cross-sectional view showing a monitoring system of a laser crystallization apparatus according to still another embodiment of the present invention.
Referring to fig. 6, the monitoring system of the laser crystallization apparatus 10 according to still another embodiment of the present invention includes an auxiliary layer 332, the auxiliary layer 332 being composed of a plurality of layers 332a, 332b, 332 c.
The auxiliary layer 332 composed of the plurality of layers 332a, 332b, 332c has a reflectivity similar to that of the amorphous silicon film 221. At this time, by forming the auxiliary layer 332 in a multilayer structure, the reflectance and transmittance of the auxiliary layer 332 can be easily adjusted. The auxiliary layer 332 may have a reflectivity of 60% of about 3%. For example, in the case where the amorphous silicon thin film 221 has a reflectance of 60%, the auxiliary layer 332 composed of the plurality of layers 332a, 332b, 332c may have a reflectance of 60%. That is, the auxiliary layer 332 can have a reflectance of 60% by stacking the layers 332a, 332b, 332c different from each other.
Hereinafter, a further embodiment according to the present invention will be described with reference to fig. 7 and 8. For convenience of explanation, the explanation of the same constitution as that according to an embodiment of the present invention is omitted.
Fig. 7 is a cross-sectional view showing a monitoring system of a laser crystallization apparatus according to still another embodiment of the present invention, and fig. 8 is a plan view showing an auxiliary layer of fig. 7.
Referring to fig. 7 and 8, a monitoring system of a laser crystallization apparatus 10 according to still another embodiment of the present invention includes an auxiliary layer 333 having a plurality of slits 333a. That is, the auxiliary layer 333 may be configured by a plurality of slits 333a and a pattern portion 333b defining the plurality of slits 333a.
The plurality of slits 333a transmit the first laser beam L1. That is, when the first laser beam L1 is irradiated to any one of the plurality of slits 333a, the first laser beam L1 may not be reflected but may pass through the slits 333a. In contrast, in the case where the first laser beam L1 is irradiated to the pattern portion 333b, a part of the first laser beam L1 is reflected at the surface of the pattern portion 333b, and another part may transmit the pattern portion 333 b. Similarly, in the case where the second laser beam L2 incident through the reflecting mirror 140 is irradiated to any one of the plurality of slits 333a, the second laser beam L2 may be transmitted through the slits 333a without being reflected.
The monitoring system of the laser crystallization apparatus 10 according to still another embodiment of the present invention includes the auxiliary layer 333 having the plurality of slits 333a, so that the first and second laser beams L1 and L2 transmitted through the slits 333a and the first and second laser beams L1 and L2 transmitted through the pattern part 333b can be measured, respectively. That is, the light intensities of the first and second laser beams L1 and L2 based on the position of the stage 310 corresponding to the slit 333a or the pattern 333b can be precisely measured.
While the embodiment of the present invention has been described above with reference to the drawings, those having ordinary skill in the art to which the present invention pertains will appreciate that it can be embodied in other specific forms without changing the technical spirit or essential technical features of the present invention. Thus, the above-described embodiment should be understood to be an exemplary embodiment in all respects, rather than a limiting embodiment.
Claims (13)
1. A monitoring system for a laser crystallization apparatus, comprising:
a laser crystallization device including a light source emitting a first laser beam and a mirror receiving an incidence of at least a portion of the first laser beam incident on an auxiliary layer and reflected to emit a second laser beam;
a stage having a first face and a second face facing each other, the first face being irradiated with the first laser beam and the second laser beam;
the auxiliary layer is arranged on any one of the first surface and the second surface of the workbench, receives incidence of the first laser beam, and reflects at least part of the first laser beam to the reflecting mirror;
and a camera overlapping the auxiliary layer and disposed adjacent to the second face, measuring light intensities of the first and second laser beams.
2. A monitoring system for a laser crystallization apparatus according to claim 1, wherein,
the auxiliary layer has a reflectivity of 3% to 60%.
3. A monitoring system for a laser crystallization apparatus according to claim 1, wherein,
the auxiliary layer is arranged between the workbench and the camera.
4. A monitoring system for a laser crystallization apparatus according to claim 1, wherein,
the auxiliary layer and the camera are arranged at intervals with the workbench sandwiched therebetween.
5. A monitoring system for a laser crystallization apparatus according to claim 1, wherein,
the auxiliary layer is disposed on the entire surface of the table.
6. A monitoring system for a laser crystallization apparatus according to claim 1, wherein,
the auxiliary layer is composed of a plurality of layers.
7. A monitoring system for a laser crystallization apparatus according to claim 1, wherein,
the auxiliary layer has a plurality of slits transmitting the first laser beam.
8. A monitoring system for a laser crystallization apparatus according to claim 1, wherein,
an angle formed by the first laser beam irradiated to the stage and a normal line perpendicular to the first surface of the stage is 5 degrees to 60 degrees.
9. A monitoring method of a laser crystallization device comprises the following steps:
arranging an auxiliary layer on any one of a first surface and a second surface of the workbench, which are opposite to each other;
a camera is arranged overlapping the auxiliary layer and adjacent to the second face;
emitting a first laser beam toward the first face of the stage;
at least a portion of the first laser beam is reflected by the auxiliary layer to a mirror;
a second laser beam is emitted to the first face of the stage by means of the mirror; and
the light intensities of the first and second laser beams are measured by a camera.
10. The method for monitoring a laser crystallization apparatus according to claim 9, wherein,
the auxiliary layer has a reflectivity of 3% to 60%.
11. The method for monitoring a laser crystallization apparatus according to claim 9, wherein,
the auxiliary layer is arranged between the workbench and the camera.
12. The method for monitoring a laser crystallization apparatus according to claim 9, wherein,
the auxiliary layer and the camera are arranged at intervals with the workbench sandwiched therebetween.
13. The method for monitoring a laser crystallization apparatus according to claim 9, wherein,
an angle formed by the first laser beam and a normal line perpendicular to the first face of the stage is 5 degrees to 60 degrees.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170087018A KR102327231B1 (en) | 2017-07-10 | 2017-07-10 | Monitoring system and monitoring method of laser polycrystallization apparatus |
| KR10-2017-0087018 | 2017-07-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109243968A CN109243968A (en) | 2019-01-18 |
| CN109243968B true CN109243968B (en) | 2023-09-19 |
Family
ID=65071884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810734689.9A Active CN109243968B (en) | 2017-07-10 | 2018-07-06 | Monitoring system and monitoring method of laser crystallization device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102327231B1 (en) |
| CN (1) | CN109243968B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1649082A (en) * | 2004-01-30 | 2005-08-03 | 株式会社日立显示器 | Apparatus for manufacturing flat panel display devices |
| CN1758417A (en) * | 2004-03-25 | 2006-04-12 | 株式会社半导体能源研究所 | Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus |
| CN1909196A (en) * | 1999-08-18 | 2007-02-07 | 株式会社半导体能源研究所 | Laser apparatus and laser annealing method |
| CN1983513A (en) * | 2005-12-16 | 2007-06-20 | 株式会社液晶先端技术开发中心 | Laser crystallization apparatus and crystallization method |
| KR20150015254A (en) * | 2013-07-31 | 2015-02-10 | 삼성디스플레이 주식회사 | Method of monitoring a laser beam and laser irradiation apparatus using the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009010196A (en) * | 2007-06-28 | 2009-01-15 | Advanced Lcd Technologies Development Center Co Ltd | Laser crystallization method and its crystallizer |
| KR102427155B1 (en) * | 2015-08-25 | 2022-07-29 | 삼성디스플레이 주식회사 | Laser crystalling apparatus |
| KR102459817B1 (en) * | 2015-10-01 | 2022-10-27 | 삼성디스플레이 주식회사 | Laser crystalling apparatus |
-
2017
- 2017-07-10 KR KR1020170087018A patent/KR102327231B1/en active IP Right Grant
-
2018
- 2018-07-06 CN CN201810734689.9A patent/CN109243968B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909196A (en) * | 1999-08-18 | 2007-02-07 | 株式会社半导体能源研究所 | Laser apparatus and laser annealing method |
| CN1649082A (en) * | 2004-01-30 | 2005-08-03 | 株式会社日立显示器 | Apparatus for manufacturing flat panel display devices |
| CN1758417A (en) * | 2004-03-25 | 2006-04-12 | 株式会社半导体能源研究所 | Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus |
| CN1983513A (en) * | 2005-12-16 | 2007-06-20 | 株式会社液晶先端技术开发中心 | Laser crystallization apparatus and crystallization method |
| KR20150015254A (en) * | 2013-07-31 | 2015-02-10 | 삼성디스플레이 주식회사 | Method of monitoring a laser beam and laser irradiation apparatus using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190006622A (en) | 2019-01-21 |
| KR102327231B1 (en) | 2021-11-17 |
| CN109243968A (en) | 2019-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11007607B2 (en) | Laser processing device and laser processing method | |
| US10328521B2 (en) | Laser machining device and laser machining method | |
| TWI248593B (en) | Display device, process and apparatus for its production | |
| US6341042B1 (en) | Laser radiating apparatus and methods for manufacturing a polycrystalline semiconductor film and a liquid crystal display device | |
| US10322526B2 (en) | Laser processing method | |
| US7619251B2 (en) | Laser crystallization method suppressing propagation of cracks forming a display device | |
| US7474679B2 (en) | Laser apparatus and manufacturing method of thin film transistor using the same | |
| US8507156B2 (en) | Laser mask and sequential lateral solidification crystallization method using the same | |
| JP2009010196A (en) | Laser crystallization method and its crystallizer | |
| US11532476B2 (en) | Laser crystallizing apparatus | |
| KR20140008127A (en) | Laser crystalling appatus and metnod | |
| KR102589766B1 (en) | Laser Apparatus | |
| CN109243968B (en) | Monitoring system and monitoring method of laser crystallization device | |
| US9508932B2 (en) | Laser crystallization system, laser crystallization method, and method of fabricating display device | |
| US10347484B2 (en) | Laser crystallizing apparatus | |
| CN114374138A (en) | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device | |
| JP2012015463A (en) | Yag laser annealing device and annealing method by yag laser light | |
| KR20120111759A (en) | Selective crystallization method and laser crystallization apparatus for thereof | |
| KR102490081B1 (en) | Laser crystallization device and method | |
| KR102467462B1 (en) | Laser crystallization apparatus | |
| KR101698511B1 (en) | Method for manufacturing display device | |
| KR102460551B1 (en) | Laser crystalling apparatus | |
| US20140320848A1 (en) | Apparatus for detecting crystallizing stain | |
| US20210310862A1 (en) | Laser energy measuring device, and laser energy measuring method | |
| KR20130057759A (en) | Crystallization apparatus, crystallization method, organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |