CN109243968A - The monitoring system and monitoring method of Laser crystallization equipment - Google Patents
The monitoring system and monitoring method of Laser crystallization equipment Download PDFInfo
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- CN109243968A CN109243968A CN201810734689.9A CN201810734689A CN109243968A CN 109243968 A CN109243968 A CN 109243968A CN 201810734689 A CN201810734689 A CN 201810734689A CN 109243968 A CN109243968 A CN 109243968A
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- laser beam
- workbench
- laser
- auxiliary layer
- crystallization equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2375—Hybrid lasers
Abstract
The present invention relates to a kind of monitoring system of Laser crystallization equipment and monitoring methods, the monitoring system includes reflecting mirror, the monitoring system of Laser crystallization equipment according to the present invention includes: Laser crystallization equipment, including light source and reflecting mirror, the light source emits first laser beam, and the reflecting mirror receives at least part of incident of the first laser beam and emits second laser beam；Workbench, have the first face and the second face toward each other, the illuminated first laser beam in the first face and second laser beam to；Auxiliary layer, any one side being arranged in the first face and the second face of workbench receive the incidence of first laser beam, and at least part of first laser beam is reflected to reflecting mirror；Camera, it is Chong Die with auxiliary layer and be disposed adjacently with the second face, measure the luminous intensity of first laser beam and second laser beam.
Description
Technical field
The present invention relates to the monitoring system of Laser crystallization equipment and monitoring methods.
Background technique
In general, organic light-emitting display device or liquid crystal display device etc. control shining for each pixel using thin film transistor (TFT)
Whether or luminous degree.This thin film transistor (TFT) includes semiconductor layer, gate electrode and source/drain electrode etc., as semiconductor layer, master
It uses the polysilicon of amorphous crystallization of silicon.
Have the thin film transistor base plate of thin film transistor (TFT) as described above or utilizes the aobvious of the thin film transistor base plate
Showing device is by forming amorphous silicon (a-Si) film in substrate and being polysilicon (P-Si) film by the amorphous silicon membrane crystallization
Process and manufacture.As the method for by amorphous silicon membrane crystallization being polysilicon membrane, it can be used and swash to amorphous silicon membrane irradiation
The method of light beam.
At this point, a part of laser beam will be in the surface reflection of amorphous silicon membrane, so that energy loss occur.In order to subtract
The laser beam of reflection, can be irradiated to the surface of amorphous silicon membrane by few this energy loss again by reflecting mirror.According to including
Luminous intensity, irradiating angle of whole laser beam of the laser beam irradiated again etc., crystallinity and the crystallization activation of amorphous silicon membrane
The efficiency of energy (crystallization activation energy) can become different, and therefore, it is necessary to the compositions such as reflecting mirror to want
Accurate alignment (align) between element.
Summary of the invention
The purpose of the present invention is to provide the monitoring systems and monitoring method of a kind of Laser crystallization equipment including reflecting mirror.
Monitoring system for realizing the Laser crystallization equipment according to the present invention of purpose as described above includes: laser crystalline substance
Makeup is set, including light source and reflecting mirror, and the light source emits first laser beam, and the reflecting mirror receives first laser beam at least
A part incidence and emit second laser beam；Workbench, has the first face and the second face toward each other, and the first face is illuminated
First laser beam and second laser beam；Auxiliary layer, any one side being arranged in the first face and the second face of workbench receive
The incidence of first laser beam, and to reflecting mirror reflection first laser beam at least part；Camera, it is Chong Die with auxiliary layer and with
Second face is disposed adjacently, and measures the luminous intensity of first laser beam and second laser beam.
Auxiliary layer has about 3% to 60% reflectivity.
Auxiliary layer is arranged between workbench and camera.
Workbench is clipped in the middle and arranges with being separated by by auxiliary layer and camera.
Auxiliary layer is arranged in the whole surface of workbench.
Auxiliary layer is made of multiple layers.
Auxiliary layer has the multiple slits for transmiting first laser beam.
It is big that the first laser beam and the normal vertical with the first face of workbench for being irradiated to workbench, which are formed by angle,
About 5 degree to about 60 degree.
Also, the monitoring method of Laser crystallization equipment according to the present invention includes the following steps: the phase each other in workbench
To the first face and the second face in it is any one side arrangement auxiliary layer；It is Chong Die with auxiliary layer and be disposed adjacently camera shooting with the second face
Head；To the first surface launching first laser beam of workbench；At least part of first laser beam reflexes to reflecting mirror by auxiliary layer；
Second laser beam is launched into the first face of workbench by reflecting mirror；And first laser beam and the are measured by camera
The luminous intensity of dual-laser beam.
Auxiliary layer has about 3% to 60% reflectivity.
Auxiliary layer is arranged between workbench and camera.
Workbench is clipped in the middle and arranges with being separated by by auxiliary layer and camera.
It is 5 degree to 60 degree that first laser beam and the normal vertical with the first face of workbench, which are formed by angle,.
The monitoring system and monitoring method of Laser crystallization equipment according to the present invention include the auxiliary being arranged on workbench
Layer, so as to critically measure the luminous intensity of the laser beam emitted from the Laser crystallization equipment for including reflecting mirror.
Detailed description of the invention
Fig. 1 is the schematic diagram of the Laser crystallization equipment of an embodiment according to the present invention.
Fig. 2 is the ideograph for showing the laser crystallization of amorphous silicon membrane.
Fig. 3 is the sectional view for showing the monitoring system of Laser crystallization equipment of an embodiment according to the present invention.
Fig. 4 is the sectional view for indicating the monitoring system of existing Laser crystallization equipment.
Fig. 5 is the sectional view for showing the monitoring system of Laser crystallization equipment according to another embodiment of the present invention.
Fig. 6 is the sectional view for showing the monitoring system of Laser crystallization equipment according to still another embodiment of the invention.
Fig. 7 is the sectional view for showing the monitoring system of Laser crystallization equipment according to still another embodiment of the invention.
Fig. 8 is the plan view for showing the auxiliary layer of Fig. 7.
Symbol description
L1: first laser beam L2: second laser beam
10: Laser crystallization equipment 110: light source
120: optical system 130: mirror
140: reflecting mirror 150: chamber
210: substrate stage 220: substrate
221: amorphous silicon membrane 222: polycrystal silicon film
310: workbench 320: camera
330,331,332,333: auxiliary layer
Specific embodiment
If referring to attached drawing and the embodiment described in detail, advantages of the present invention, feature and the method for realizing this
It will become clear.However the invention is not limited to embodiments disclosed below, can be presented as multiplicity different from each other
Form, only the present embodiment is in order to become disclosure of the invention completely, and to the technical field belonging to this field
In with the personnel of basic knowledge level completely inform the scope of the present invention and provide that the present invention is only by claims
Range defined.Therefore, in some embodiments, well known processing step, well known component structure and well known
Technology will not be specifically described, to prevent the present invention from explaining with being blurred.Through the whole instruction, the same attached drawing mark
Number refer to same constituent element.
In the accompanying drawings, thickness amplification is shown in order to conclusively show multiple layers and region.Through the whole instruction,
Identical drawing reference numeral is imparted to similar part.When mentioning the part such as layer, film, region, plate positioned at another part "upper",
It not only includes the situation of " above adjacent " positioned at another part, further includes the intermediate situation for being folded with other parts.Phase
Instead, in the case where mentioning certain a part and being located at " above adjacent " of another part, indicating intermediate does not have other parts.This
Outside, when mention the part such as layer, film, region, plate be located at another part " under " when, not only include positioned at the " tight of another part
Below neighbour " situation, further include the intermediate situation for being folded with other parts.On the contrary, being located at another portion when mentioning certain a part
In the case where " below adjacent " divided, indicating intermediate does not have other parts.
Relative terms " following (below) " spatially, " ... under (beneath) ", " lower part (lower) ",
" ... on (above) ", " top (upper) " etc. as shown in figure can be in order to easily describe an element or composition
Correlativity between element and another element or constituent element and use.Relative terms spatially are being added to as shown in the figure
Direction and use or operation when be understood to include element different directions from each other term.For example, that will illustrate
When element overturning in attached drawing, the element for being described as " following (below) " or " under (beneath) " of another element can
To be located at another element " on (above) ".Therefore, illustrative term " below (under) " can will above and below to complete
Portion includes.Element can be arranged that accordingly, relative terms spatially can be solved according to arranged direction by different directions
It releases.
In the present specification, the first, second, third, etc. term can be used for illustrating multiplicity constituent element, but these
Constituent element is not limited to above-mentioned term.Above-mentioned term is mainly to be different from another constituent element for a constituent element
Purpose and use.For example, first constituent element can be named as second in the case where not departing from interest field of the invention
Constituent element or third constituent element etc., similarly, the second constituent element or third constituent element can also be named alternately.
If all terms (including technical and scientific term) used in the present specification can be by without other definition
Use the meaning that can be commonly understood by for the people in the technical field belonging to the present invention with basic knowledge.Also, usually make
The term defined on dictionary is particularly defined as long as no clear, then will not be explained extremely or exceedingly.
Hereinafter, being illustrated referring to figs. 1 to Fig. 4 to one embodiment of the invention.
Fig. 1 is the schematic diagram of Laser crystallization equipment, and Fig. 2 is the ideograph for showing the laser crystallization of amorphous silicon membrane.
Referring to Figures 1 and 2, Laser crystallization equipment 10 includes: light source 110, for generating laser beam L；Optical system 120,
For making laser beam L obtain light transformation, to export first laser beam L1；And chamber 150, illuminated transformed first swashs
Light beam L1.The substrate stage 210 of substrate 220 and mounted board 220, the formation of substrate 220 are disposed in chamber 150
Have by transformed first laser beam L1 irradiation and the amorphous silicon membrane 221 of laser crystallization.
The laser beam L generated from light source 110 may include P polarisation and S polarisation, and can be induction amorphous silicon membrane
Excimer laser (excimer laser) beam of 221 phase transformations.That is, the light source 110 of an embodiment according to the present invention can be standard
Molecular laser.However, the present invention is not limited thereto, light source 110 can also be yttrium-aluminium-garnet (YAG:Yttrium
Aluminum Garnet) laser, glass laser, Yttrium Orthovanadate (YVO4: Yttrium Orthovanadate), argon (Ar) laser.
Laser beam L obtains light transformation in optical system 120, and the first laser beam L1 for obtaining light transformation makes to be formed in substrate 220
221 crystallization of amorphous silicon membrane of upper formation.Laser beam L and first laser beam L1 can be and advanced side by side in the form of arranged in parallel
Multiple beam patterns.
Amorphous silicon membrane 221 can be heavy by low-pressure chemical deposition, normal pressure chemical sedimentation, plasma enhanced chemical
Area method (PECVD:Plasma Enhanced Chemical Vapor Deposition), sputtering (sputtering) method, vacuum
The methods of sedimentation (vacuum evaporation) and the thickness for being formed as 25nm to 80nm.Also, amorphous silicon membrane 221 can
To use silicon or silicon base substance (for example, SixGe1-x) and formed.
Optical system 120 includes the multiple lens (not shown) and mirror 130 for changing the path of laser beam L, and makes to swash
Light beam L light converts and emits first laser beam L1.In addition, although it is not shown, optical system 120 may include for changing
At least one half-wave plate (HWP:Half Wave Plate) of the polarisation axis direction of the laser beam L incident from light source 110, and
Can also include reflect a part of laser beam L and transmit a part at least one polarizing beam splitter (PBS:
Polarization Beam Splitter)。
The optical system 120 of an embodiment according to the present invention further includes reflecting mirror 140, which receives first
At least part of laser beam L1 and emit second laser beam L2.That is, a part of first laser beam L1 is non-on substrate 220
The surface of polycrystal silicon film 221 is reflected and is incident on reflecting mirror 140, which is reflected again and to substrate by reflecting mirror 140
Amorphous silicon membrane 221 on 220 emits second laser beam L2.
Accordingly, the Laser crystallization equipment 10 including reflecting mirror 140 of an embodiment according to the present invention is not different from including
The situation of 221 color development first laser beam L1 of amorphous silicon membrane of the Laser crystallization equipment of reflecting mirror 140 on substrate 220, with
First laser beam L1 emits second laser beam L2 together.That is, the laser beam in the surface reflection of amorphous silicon membrane 221 is again incident
To amorphous silicon membrane 221, so as to improve the crystallinity of amorphous silicon membrane 221 and the efficiency of crystalline active energy.
Chamber 150 can be according to characteristic, purposes of user of process etc. and including nitrogen N2, air (air) or mixing
Gas etc., and can be depressurized or be pressurizeed, or can be vacuum state.Chamber 150 can be style of opening (open
Type), or it can be the enclosed type (closed type) being isolated with outside air.
The substrate stage 210 of substrate 220 and mounted board 220,220 shape of substrate are disposed in chamber 150
It is irradiated and the amorphous silicon membrane 221 of crystallization at having by first laser beam L1 and second laser beam L2.Substrate stage 210 is along level
Direction is mobile and first laser beam L1 and second laser beam L2 is made to be irradiated to the whole region of substrate 220.
Specifically, as shown in Fig. 2, substrate works in a period of irradiating first laser beam L1 and second laser beam L2
Platform 210 moves substrate 220 consistently in the direction of the arrow, so that first laser beam L1 and second laser beam L2 be made equably to irradiate
Amorphous silicon membrane 221 on to substrate 220.221 quilt of amorphous silicon membrane of illuminated first laser beam L1 and second laser beam L2
Crystallization is polycrystal silicon film 222.The principle of the crystallization of amorphous silicon membrane 221 is, by being swashed by first laser beam L1 and second
Light beam L2 irradiates several nanoseconds of (nano second) clocks and is allowed to cool the temperature of amorphous silicon after steeply rising, to make non-
Crystal silicon melting and again crystallization.
Polycrystal silicon is also known as polysilicon (Po-Si), and field-effect mobility (Field-effect mobility)
It is higher by hundreds times compared to silicon, and signal handling capacity is also excellent under high frequency condition, so as to aobvious for organic light emission
The display devices such as showing device.
Fig. 3 is the sectional view for showing the monitoring system of Laser crystallization equipment of an embodiment according to the present invention,
Fig. 4 is the sectional view for indicating the monitoring system of existing Laser crystallization equipment.
Referring to Fig. 3, the monitoring system of the Laser crystallization equipment 10 of an embodiment according to the present invention includes: laser crystallization dress
Set 10；Workbench 310, the illuminated first laser beam L1 and second laser beam L2 emitted from Laser crystallization equipment 10；Auxiliary layer
330, it is arranged in the lower part of workbench 310；And camera 320 is arranged in the lower part of auxiliary layer 330.At this point, by workbench 310
Upper face be defined as the first face S1, and the lower surface of workbench 310 is defined as the second face S2.
Laser crystallization equipment 10 includes reflecting mirror 140, and emits first to the first face S1 of workbench 310 as described above
Laser beam L1 and second laser beam L2.
Workbench 310 and 10 predetermined distance of Laser crystallization equipment and arrange, and received from Laser crystallization equipment 10
First laser beam L1 and second laser beam L2.Workbench 310 is the composition for monitoring Laser crystallization equipment 10, and is illustrated in figure
Differently, arrangement is not formed with the substrate of amorphous silicon membrane 221 to the substrate stage 210 of 1 and Fig. 2 on workbench 310
220。
Auxiliary layer 330 is disposed in the second face S2 of workbench 310.At this point, auxiliary layer 330 has and amorphous silicon membrane
221 similar reflectivity.For example, auxiliary layer 330 can have the reflectivity substantially the same with amorphous silicon membrane 221.For example,
Auxiliary layer 330 can have about 3% to 60% reflectivity.For example, when amorphous silicon membrane 221 has 60% reflectivity
In the case of, auxiliary layer 330 also can have 60% reflectivity.
Camera 320 and the second face S2 of workbench 310 be disposed adjacently, and measures and emit from Laser crystallization equipment 10
The luminous intensity of first laser beam L1 and second laser beam L2.At this point, camera 320 is in order to adjust between Laser crystallization equipment 10
Spacing and can move up and down.That is, in order to be carried out pair when measuring the luminous intensity of first laser beam L1 and second laser beam L2
Coke, the available adjusting of spacing between camera 320 and Laser crystallization equipment 10.
By the luminous intensity measured by camera 320, user can be by the constituent element of Laser crystallization equipment 10 critically
It is aligned (align) and improves the crystallinity of the amorphous silicon membrane 221 based on Laser crystallization equipment 10 and the effect of crystalline active energy
Rate.
As shown in figure 4, if not forming auxiliary layer 330 on the workbench 310 for monitoring, it is incident to workbench 310
First laser beam L1 largely will not by reflection and pass through workbench 310.That is, being used on the workbench 310 of monitoring not cloth
The substrate 220 for being formed with amorphous silicon membrane 221 is set, therefore the reflection of first laser beam L1 hardly occurs.Therefore, Bu Huiru
Process with actual crystallizing amorphous silicon thin film 221 is such, and a part of first laser beam L1 is incident to reflecting mirror 140, also not
Second laser beam L2 can be emitted.
In other words, with the first laser beam L1 and second in the process of crystallizing amorphous silicon thin film 221 as depicted in figs. 1 and 2
The situation that laser beam L2 is emitted to substrate stage 210 is different, during the monitoring of Laser crystallization equipment 10, only first
Laser beam L1 is emitted to workbench 310.Therefore, it is impossible to measure in the crystallization process of actual amorphous silicon membrane 221 from laser
The luminous intensity for the second laser beam L2 that crystallization system 10 emits, accordingly, it is difficult to realize the Laser crystallization equipment including reflecting mirror 140
10 accurate monitoring.
The monitoring system of the Laser crystallization equipment 10 of an embodiment according to the present invention passes through in the second face of workbench 310
S2 arrangement has the auxiliary layer 330 of reflectivity similar with amorphous silicon membrane 221, can not only measure the light of first laser beam L1
Intensity, additionally it is possible to measure the luminous intensity of second laser beam L2.Therefore, the monitoring of the Laser crystallization equipment 10 including reflecting mirror 140
It becomes easy, accordingly, user can make the constituent element of Laser crystallization equipment 10 critically be aligned (align), so as to mention
The crystallinity of amorphous silicon membrane 221 of the height based on Laser crystallization equipment 10 and the efficiency of crystalline active energy.
It is as follows if illustrating in order to the monitoring method of the Laser crystallization equipment 10 of an embodiment according to the present invention.
Firstly, the second face S2 in workbench 310 arranges auxiliary layer 330.Although being illustrated as according to the present invention one to implement
The auxiliary layer 330 of example is only overlapped in a part of workbench 310 and arranges, but be not limited to that this, auxiliary layer 330 can be with
It is arranged in the whole surface of the second face S2 of workbench 310.
Then, camera 320 is overlappingly arranged with auxiliary layer 330.At this point, workbench 310 is clipped in the middle by camera 320
And it is arranged with being separated by with Laser crystallization equipment 10.
Then, the Laser crystallization equipment 10 being disposed adjacently with the first face S1 of workbench 310 is to the first of workbench 310
Face S1 emits first laser beam L1.A part of the first laser beam L1 of the first face S1 of workbench 310 is incident on by auxiliary layer
After 330 reflections, the reflecting mirror 140 to Laser crystallization equipment 10 is incident.At this point, the first laser beam reflected by auxiliary layer 330
For a part of L1 in order to be incident on reflecting mirror 140, first laser beam L1 is incident on workbench in a manner of with predetermined angular
310.For example, first laser beam L1 with perpendicular to workbench 310 the first face S1 normal VL be formed by angle [alpha] can be about
It is 5 degree to 60 degree.Therefore, a part of of the first laser beam L1 reflected can be incident on reflecting mirror 140.
Then, reflecting mirror 140 receives the incidence of a part of first laser beam L1, and to the first face S1 of workbench 310
Emit second laser beam L2.That is, the Laser crystallization equipment 10 including reflecting mirror 140 not only emits first laser beam L1, also emit
Second laser beam L2 is to workbench 310.
Then, the light for being incident on the first laser beam L1 and second laser beam L2 of workbench 310 is measured by camera 320
Intensity.By the luminous intensity measured by camera 320, the constituent element of Laser crystallization equipment 10 can be critically aligned by user
(align) crystallinity of the amorphous silicon membrane 221 based on Laser crystallization equipment 10 and the efficiency of crystalline active energy are improved.
Hereinafter, referring to Fig. 5 to being illustrated according to another embodiment of the present invention.For ease of description, omit for
The explanation of the identical constituent element of one embodiment of the invention.
Fig. 5 is the sectional view for showing the monitoring system of Laser crystallization equipment according to another embodiment of the present invention.
Referring to Fig. 5, the monitoring system of Laser crystallization equipment 10 according to another embodiment of the present invention includes being arranged in work
Make the upper side of platform 310, the i.e. auxiliary layer 331 of the first face S1.
Auxiliary layer 331 has reflectivity similar with amorphous silicon membrane 221.For example, auxiliary layer 331 can have and amorphous
Substantially the same reflectivity of silicon thin film 221.Auxiliary layer 331 can have about 3% to 60% reflectivity.For example, non-
In the case that polycrystal silicon film 221 has 60% reflectivity, auxiliary layer 331 also can have 60% reflectivity.
In addition, auxiliary layer 331 according to another embodiment of the present invention can be arranged in the whole surface of workbench 310.
However, the invention is not limited thereto, auxiliary layer 331 can also only be arranged in a part of the first face S1 of workbench 310.
The monitoring system of Laser crystallization equipment 10 according to another embodiment of the present invention passes through the first of workbench 310
S1 arrangement in face has the auxiliary layer 331 of reflectivity similar with amorphous silicon membrane 221, so that first laser beam can not only be measured
The luminous intensity of L1, additionally it is possible to measure the luminous intensity of second laser beam L2.Therefore, including the Laser crystallization equipment 10 of reflecting mirror 140
Monitoring become easy, accordingly, the constituent element of Laser crystallization equipment 10 can be critically aligned (align) by user, thus
It can be improved the crystallinity of the amorphous silicon membrane 221 based on Laser crystallization equipment 10 and the efficiency of crystalline active energy.
Hereinafter, being illustrated referring to Fig. 6 to another embodiment of the present invention.For ease of description, it omits and is directed to and this hair
The explanation of the bright identical composition of an embodiment.
Fig. 6 is the sectional view for showing the monitoring system of Laser crystallization equipment according to still another embodiment of the invention.
Referring to Fig. 6, the monitoring system of Laser crystallization equipment 10 according to still another embodiment of the invention includes auxiliary layer
332, the auxiliary layer 332 is made of multiple layers of 332a, 332b, 332c.
The auxiliary layer 332 being made of multiple layers of 332a, 332b, 332c has reflectivity similar with amorphous silicon membrane 221.
At this point, by the way that auxiliary layer 332 is formed as multilayered structure, so as to easily adjust reflectivity and the transmission of auxiliary layer 332
Rate.Auxiliary layer 332 can have about 3% 60% reflectivity.For example, there is 60% reflection in amorphous silicon membrane 221
In the case where rate, the auxiliary layer 332 being made of multiple layers of 332a, 332b, 332c also can have 60% reflectivity.That is, energy
Layer 332a, 332b, 332c different from each other is enough laminated and make auxiliary layer 332 have 60% reflectivity.
Hereinafter, referring to Fig. 7 and Fig. 8 to being illustrated according to still another embodiment of the invention.For ease of description, needle is omitted
To the explanation of composition identical with an embodiment according to the present invention.
Fig. 7 is the sectional view for showing the monitoring system of Laser crystallization equipment according to still another embodiment of the invention, and Fig. 8 is
The plan view of the auxiliary layer of Fig. 7 is shown.
Referring to Fig. 7 and Fig. 8, the monitoring system of Laser crystallization equipment 10 according to still another embodiment of the invention includes having
The auxiliary layer 333 of multiple slit 333a.That is, auxiliary layer 333 can use multiple slit 333a and limit multiple slit 333a
Drafting department 333b constitute.
Multiple slit 333a transmit first laser beam L1.That is, being irradiated in multiple slit 333a in first laser beam L1
Some in the case where, first laser beam L1 can be not reflected and through slit 333a.On the contrary, being shone in first laser beam L1
In the case where being mapped to drafting department 333b, for a part of first laser beam L1 in the surface reflection of drafting department 333b, another part can
Drafting department 333b to be transmitted.Equally, multiple slit 333a are being irradiated to by the incident second laser beam L2 of reflecting mirror 140
In some in the case where, second laser beam L2 can be not reflected and through slit 333a.
The monitoring system of Laser crystallization equipment 10 according to still another embodiment of the invention includes having multiple slit 333a
Auxiliary layer 333, so as to measure the first laser beam L1 through slit 333a, second laser beam L2 respectively and through pattern
First laser beam L1, the second laser beam L2 of portion 333b.That is, can critically measure based on corresponding to slit 333a or drafting department
The luminous intensity of the first laser beam L1 and second laser beam L2 of the position of the workbench 310 of 333b.
More than, one embodiment of the invention is illustrated referring to attached drawing, but is had in art of the present invention
The personnel of general knowledge level will be understood that, can be real in the case where not changing technical idea or essential features of the invention
It applies as other specific forms.Therefore, an embodiment described above should be understood as, and be exemplary reality in all respects
Example is applied, without being restrictive embodiment.
Claims (13)
1. a kind of monitoring system of Laser crystallization equipment, wherein include:
Laser crystallization equipment, including light source and reflecting mirror, the light source emit first laser beam, and the reflecting mirror receives described the
One laser beam at least part of incident and emit second laser beam；
Workbench, has the first face and the second face toward each other, the illuminated first laser beam in first face and described
Second laser beam；
Auxiliary layer, any one side being arranged in first face and second face of the workbench receive described first
The incidence of laser beam, and reflect to the reflecting mirror at least part of the first laser beam；
Camera, it is Chong Die with the auxiliary layer and be disposed adjacently with second face, measure the first laser beam and described
The luminous intensity of second laser beam.
2. the monitoring system of Laser crystallization equipment as described in claim 1, wherein
The auxiliary layer has 3% to 60% reflectivity.
3. the monitoring system of Laser crystallization equipment as described in claim 1, wherein
The auxiliary layer is arranged between the workbench and the camera.
4. the monitoring system of Laser crystallization equipment as described in claim 1, wherein
The workbench is clipped in the middle with the camera and arranges with being separated by by the auxiliary layer.
5. the monitoring system of Laser crystallization equipment as described in claim 1, wherein
The auxiliary layer is arranged in the whole surface of the workbench.
6. the monitoring system of Laser crystallization equipment as described in claim 1, wherein
The auxiliary layer is made of multiple layers.
7. the monitoring system of Laser crystallization equipment as described in claim 1, wherein
The auxiliary layer has the multiple slits for making the first laser beam transmission.
8. the monitoring system of Laser crystallization equipment as described in claim 1, wherein
It is irradiated to the first laser beam and the normal institute shape vertical with first face of the workbench of the workbench
At angle be 5 degree to 60 degree.
9. a kind of monitoring method of Laser crystallization equipment, wherein include the following steps:
Any one side arrangement auxiliary layer in the first face and the second face toward each other of workbench；
It is Chong Die with the auxiliary layer and be disposed adjacently camera with second face；
To the first surface launching first laser beam of the workbench；
At least part of the first laser beam reflexes to reflecting mirror by the auxiliary layer；
Second laser beam is launched into first face of the workbench by the reflecting mirror；And
The luminous intensity of the first laser beam and the second laser beam is measured by camera.
10. the monitoring method of Laser crystallization equipment as claimed in claim 9, wherein
The auxiliary layer has 3% to 60% reflectivity.
11. the monitoring method of Laser crystallization equipment as claimed in claim 9, wherein
The auxiliary layer is arranged between the workbench and the camera.
12. the monitoring method of Laser crystallization equipment as claimed in claim 9, wherein
The workbench is clipped in the middle with the camera and arranges with being separated by by the auxiliary layer.
13. the monitoring method of Laser crystallization equipment as claimed in claim 9, wherein
It is 5 degree to 60 that the first laser beam and the normal vertical with first face of the workbench, which are formed by angle,
Degree.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170087018A KR102327231B1 (en) | 2017-07-10 | 2017-07-10 | Monitoring system and monitoring method of laser polycrystallization apparatus |
| KR10-2017-0087018 | 2017-07-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109243968A true CN109243968A (en) | 2019-01-18 |
| CN109243968B CN109243968B (en) | 2023-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810734689.9A Active CN109243968B (en) | 2017-07-10 | 2018-07-06 | Monitoring system and monitoring method of laser crystallization device |
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| Country | Link |
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| KR (1) | KR102327231B1 (en) |
| CN (1) | CN109243968B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20190006622A (en) | 2019-01-21 |
| CN109243968B (en) | 2023-09-19 |
| KR102327231B1 (en) | 2021-11-17 |
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