CN109216886A - Radiation appliance - Google Patents
Radiation appliance Download PDFInfo
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- CN109216886A CN109216886A CN201810019555.9A CN201810019555A CN109216886A CN 109216886 A CN109216886 A CN 109216886A CN 201810019555 A CN201810019555 A CN 201810019555A CN 109216886 A CN109216886 A CN 109216886A
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- Prior art keywords
- conducting wire
- transistor
- electrode pad
- radiation appliance
- electrode
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The disclosure proposes a kind of radiation appliance, comprising: a transistor base, a first transistor and a second transistor are set on transistor base；One first electrode pad and a second electrode pad are set on transistor base；And one first conducting wire and one second conducting wire be set on transistor base.First electrode pad is arranged adjacent to the first transistor, and second electrode pad is arranged adjacent to second transistor.The first transistor is electrically connected through the first conducting wire and first electrode pad, and second transistor is electrically connected through the second conducting wire and second electrode pad.Wherein the distance between the first transistor and first electrode pad are less than the distance between second transistor and second electrode pad, and the ratio of the gross area of the gross area of the first conducting wire and the second conducting wire is between 0.8 to 1.2.
Description
Technical field
The disclosure relates to a kind of electronic device, and particularly with regard to a kind of radiation appliance comprising liquid crystal.
Background technique
The distributing position of modulated unit in radiation appliance is simultaneously inhomogenous, and to control the thin of each modulated unit
Film transistor (Thin Film Transistor, TFT) is regularly matrix arrangement, therefore each thin film transistor (TFT) connection
Distance to modulated unit is different from.The conducting wire of different length, which is formed by coupled capacitor and will affect, is output to modulated list
The operation voltage of member, and cause the problem of can not ideally operating modulated unit.
Therefore, need to solve the problems, such as that coupled capacitor caused by each cabling is inconsistent in radiation appliance at present.
Summary of the invention
In view of above-mentioned problem, the disclosure proposes a kind of radiation appliance, comprising: a transistor base, one first is brilliant
Body pipe and a second transistor are set on the transistor base, and a first electrode pad and a second electrode pad are set to the crystal
On pipe substrate and one first conducting wire and one second conducting wire are set on the transistor base.The first electrode pad is adjacent to this
The first transistor setting, the second electrode pad are arranged adjacent to the second transistor.The first transistor penetrates first conducting wire
It is electrically connected with the first electrode pad, which is electrically connected through second conducting wire and the second electrode pad.Wherein
The distance between the first transistor and the first electrode pad are less than the distance between the second transistor and the second electrode pad,
And the ratio of the gross area of the gross area of first conducting wire and second conducting wire is between 0.8 to 1.2.
In conclusion the radiation appliance of the disclosure does various designs to conducting wire, the coupled capacitor for whereby generating conducting wire is connect
Closely, enable the operation of radiation appliance more evenly stable.
Detailed description of the invention
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates, in which:
Fig. 1 is the upper schematic diagram for showing the control panel of the radiation appliance about the disclosure.
Fig. 2 is the A-A ' line profile for showing the control panel of Fig. 1.
Fig. 3 A and Fig. 3 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 1.
Fig. 4 A and Fig. 4 B are the equivalent circuits for showing the part of two group transistors and electronic pads in embodiment of the disclosure 1
Figure.
Fig. 5 A and Fig. 5 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 2.
Fig. 6 A and Fig. 6 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 3.
Fig. 7 A and Fig. 7 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 4.
Fig. 8 A and Fig. 8 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 5.
[symbol description]
1 control panel
11 transistor bases
12 opposite side substrates
13 dielectric layers
110 transistors
110A the first transistor
110B second transistor
111 electronic pads
111A first electrode pad
111B second electrode pad
112 openings
113 conducting wires
The first conducting wire of 113A, 113A_1,113A_2,113A_3,113A_4
The second conducting wire of 113B, 113B_4
113A1,113A_11,113A_21,113A_31,113A_41,113B1 first part
113A2,113A_12,113A_22,113A_32,113A_42 second part
113A_13 Part III
113A_14 Part IV
113A_35 Part V
114A, 114B source electrode
115A, 115B drain electrode
116A, 116B grid
118A, 118B semiconductor layer
121 pairs of lateral electrodes
140 first insulating layers
142 second insulating layers
Cst, CstA1, CstA2, CstB capacitor
D1 first direction
D2 second direction
D3 third direction
The modulated unit of P
Specific embodiment
The following description provides many different embodiments or example, for implementing the different characteristic of the disclosure.With
Component and arrangement mode described in lower specific examples are only used to express the disclosure with simplifying, and only as an example, and not use
To limit the disclosure.For example, the description of structure of the fisrt feature above a second feature includes the first and second spies
It directly contacts between sign, or is set between the first and second features with another feature, so that the first and second features are simultaneously
It is not directly to contact.
The first of this specification and second equal vocabulary, only as the purpose of clear interpretation, not corresponding to and
Limit the scope of the patents.In addition, the vocabulary such as fisrt feature and second feature, and non-limiting it be identical or be different feature.
In the spatially relevant vocabulary that this is used, such as above or below etc., only to one in simple description schema
Component or a feature are relative to another component or the relationship of feature.It further include different sides other than the orientation described in schema
Position uses or the device of operation.
Shape, size and thickness in schema may be drawn for clearly explained purpose and not according to ratio or
It is simplified, purposes of discussion is only provided.
Fig. 1 is the upper schematic diagram for showing the control panel of the radiation appliance about the disclosure.Fig. 2 shows Fig. 1
A-A ' the line profile of control panel.As shown in Figure 1, the control panel 1 in the radiation appliance of the disclosure includes multiple transistors
110 and multiple modulated unit P, multiple transistors 110 are that (schematic diagram only shows the transistor of a part with rectangular arrangement
110).The radiation appliance of the disclosure can be antenna assembly, be operable in high-frequency range, such as can be liquid crystal antenna, but not
It is defined in this.In one embodiment, high-frequency range is greater than or is equal to 1 gigahertz (GHZ) (GHz) and is less than or equal to 80 gigahertz (GHZ)s
(GHz), in another embodiment, high-frequency range is greater than or is equal to 1 gigahertz (GHZ) (GHz) and is less than or equal to 50 gigahertz (GHZ)s (GHz).
Transistor in the disclosure may be, for example, thin film transistor (TFT), and but not limited to this, other suitable transistors are equally applicable for this
In open.Multiple modulated unit P (the modulated unit P that schematic diagram only shows a part) can be set to control plane inhomogenously
Plate 1.Modulated unit P includes electronic pads 111 and to lateral electrode 121.The electronic pads 111 of modulated unit P can pass through one
Conducting wire 113 and neighbouring transistor 110 are electrically connected.Whereby, it can be independently controlled each adjustable by control transistor 110
Unit P processed, and can emit or receive wireless signal.
As shown in Fig. 2, the control panel 1 in the radiation appliance of the disclosure be by transistor base 11, opposite side substrate 12 with
And dielectric layer 13 is formed, opposite side substrate 12 is correspondingly arranged with transistor base 11, and dielectric layer 13 is set to transistor base 11
Between opposite side substrate 12.In the present embodiment, dielectric layer 13 may include the material with high birefringence characteristic, such as liquid crystal,
But not limited to this.Modulated unit P in control panel 1 can control the transmitting of dielectric layer 13 or receive high frequency radiation signal.?
11 side of transistor base can form transistor 110, conducting wire 113 and electronic pads 111.In the present embodiment, conducting wire 113 can be formed
In on the first insulating layer 140.Conducting wire 113 can be formed by conductive material, can be for example comprising metal or transparent conductive material, but not
As limit.One end of conducting wire 113 can be electrically connected transistor 110, and the other end of conducting wire 113 can be electrically connected electronic pads 111.
Specifically, on conducting wire 113, electronic pads 111 may be disposed in second insulating layer 142 settable second insulating layer 142.Second
Insulating layer 142 can have through-hole, and electronic pads 111 can pass through through-hole and conducting wire 113 is electrically connected.12 side of substrate, opposite side in opposite side
Electrode 121 may be disposed on the surface towards dielectric layer 13 of opposite side substrate 12.There can be opening 112 to lateral electrode 121, be open
The setting of 112 counter electrode pads 111.In embodiment, opening 112 in the normal direction of transistor base 11 with electronic pads 111
It partly overlaps, and electronic pads 111 partly overlap in the normal direction of transistor base 11 with to lateral electrode 121.To lateral electrode
121 a part and electronic pads 111 forms modulated unit P.
In said structure, electronic pads 111 can be the high metal (such as including gold, silver, copper etc.) of electric conductivity or its conjunction
Gold, but not limited to this.Electronic pads 111 are also possible to the structure of different metal stacks, such as the structure of copper and molybdenum storehouse, but
It is not limited.
The basic structure of the control panel 1 of the radiation appliance of the disclosure is explained above.However, as shown in Figure 1, due to crystalline substance
Distance of the body pipe 110 apart from electronic pads 111 is different, so that being electrically connected transistor 110 and the conducting wire 113 of electronic pads 111 has
Different length.The different conducting wire 113 of length forms different coupled capacitors, and transistor 110 can be allowed to be transported to electronic pads 111
Voltage is different, and makes the operation of radiation appliance can not be uniform and stable.
Fig. 3 A and Fig. 3 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 1.Fig. 4 A
And Fig. 4 B is the equivalent circuit diagram for showing the part of two group transistors and electronic pads in embodiment of the disclosure 1.In Fig. 3 A and figure
In 3B, the first transistor 110A and second transistor 110B are the two of them in multiple transistors 110, and first electrode pads 111A
And second electrode pad 111B is the two of them in multiple electrode pads 111.Specifically, radiation appliance includes transistor base
11, the first transistor 110A and second transistor 110B are set on transistor base 11, and first electrode pads the electricity of 111A and second
Polar cushion 111B is set on transistor base 11, and the first conducting wire 113A and the second conducting wire 113B are set on transistor base 11.
First electrode pads 111A and is arranged adjacent to the first transistor 110A, and second electrode pad 111B is set adjacent to second transistor 110B
It sets.The first transistor 110A is electrically connected through the first conducting wire 113A and first electrode pad 111A, and second transistor 110B is penetrated
Second conducting wire 113B and second electrode pad 111B are electrically connected.The first transistor 110A includes source electrode 114A, drain electrode 115A, partly leads
Body layer 118A with gate pole 116A, second transistor 110B include source electrode 114B, drain electrode 115B, semiconductor layer 118B with gate pole
116B.First electrode pad 111A is electrically connected to the drain electrode 115A of the first transistor 110A, the second electricity through the first conducting wire 113A
Polar cushion 111B is electrically connected to the drain electrode 115B of second transistor 110B through the second conducting wire 113B.Specifically, drain 115A
With the first conducting wire 113A substantially can by with along with processing procedure formed and be connected with each other, in 11 normal direction of transistor base with
The partial visual of grid 116A overlapping is drain electrode 115A, and rest part can be considered the first conducting wire 113A.In other words, it drains
115A, which extends, is connected to first electrode pad 111A with the kenel of the first conducting wire 113A after the first transistor 110A.It is similar, leakage
Pole 115B and the second conducting wire 113B substantially can by with along with processing procedure formed and be connected with each other, in 11 normal side of transistor base
The partial visual Chong Die with grid 116B is drain electrode 115B upwards, and rest part can be considered the second conducting wire 113B.In other words,
Drain electrode 115B, which extends, is connected to second electrode pad 111B with the kenel of the second conducting wire 113B after second transistor 110B.It should be noted
, source electrode defined above in other embodiments or drains, and drain electrode defined above, in other embodiments
In or source electrode.That is, source electrode can be component symbol 115A and 115B in the other embodiments of the disclosure,
Drain electrode can be component symbol 114A and 114B, and the disclosure is not particularly limited.It is noted that embodiment of the disclosure
In only draw members, and omit other assemblies.For example, grid 116A is actually connect with scan line, but the disclosure
In show grid 116A only with sharp explanation.
As shown in Fig. 3 A and Fig. 3 B, the distance between the first transistor 110A and first electrode pad 111A are less than the second crystal
The distance between pipe 110B and second electrode pad 111B.In the disclosure, so-called " distance " can refer to semiconductor layer 118A projection
The most short distance between the profile on transistor base 11 is projected in the profile on transistor base 11 and first electrode pad 111A
From, or can refer to profile that semiconductor layer 118B is projected on transistor base 11 and second electrode pad 111B is projected in transistor
The shortest distance between profile on substrate 11.In embodiment 1, the wheel of the profile of the first conducting wire 113A and the second conducting wire 113B
It is wide different.In the disclosure, so-called " profile different " can refer to the shape or size and the second conducting wire 113B of the first conducting wire 113A
Shape or of different sizes, the first conducting wire 113A on transistor base projection and throwing of second conducting wire on transistor base
Shadow can not be completely coincident.In one embodiment, the first conducting wire 113A meeting and a part formation the first coupling electricity to lateral electrode 121
Hold, the second conducting wire 113B meeting and a part the second coupled capacitor of formation to lateral electrode 121.In one embodiment, the first conducting wire
Length of the length of 113A less than the second conducting wire 113B, in order to keep the first coupled capacitor and the second coupled capacitor close, first is led
The width of line 113A can be greater than the width of the second conducting wire 113B, whereby compensate the gross area of the first conducting wire 113A and lead at second
The gross area of line 113B is close.For example, can compensate for the first conducting wire 113A makes the first coupled capacitor and the second coupled capacitor
Ratio between 0.8 to 1.2 or the ratio of the gross area of the gross area of the first conducting wire 113A and the second conducting wire 113B between
Between 0.8 to 1.2.In the present embodiment, the first conducting wire 113A can have first part 113A1 to extend along first direction D1, the
Two conducting wire 113B can have first part 113B1, and D2 extends in a second direction, and the first part 113A1 of the first conducting wire 113A
The width of first part 113B1 of the width greater than the second conducting wire 113B.First direction D1 and second direction D2 may be the same or different,
The disclosure is not limited.In the disclosure, so-called " width " can guide line perpendicular to the maximum line width on extending direction.
In the present embodiment, the first conducting wire 113A can have more second part 113A2, and the first part 113A1 of the first conducting wire 113A connects
Meet second part 113A2, the second part 113A2 of the first conducting wire 113A extends along third direction D3, and first direction D1 and the
Three direction D3 are different.Since the size of coupled capacitor can be directly proportional to area, the gross area is close can obtain it is similar
Coupled capacitor compensates the difference of RC (resistor-capacitor) load whereby.
In the disclosure, so-called " gross area is close " and " coupled capacitor is close " refer to total face of the conducting wire through overcompensation
The ratio of the gross area (and capacitor) of product (and capacitor) and the conducting wire without overcompensation is between 0.8 to 1.2.Below by way of figure
4A and Fig. 4 B is further illustrated.
As shown in fig. 4 a and fig. 4b, the second conducting wire 113B that the drain electrode end of second transistor 110B is connected is not pass through
The width of compensation, therefore in the equivalent circuit diagram of part, second transistor 110B can parallel connection two capacitors Cst, CstB.Capacitor
Cst is the equivalent capacity of second electrode pad 111B, and capacitor CstB is the equivalent capacity of the second conducting wire 113B.Relative to this.First
The first conducting wire 113A that the drain electrode end of transistor 110A is connected is broadening after overcompensation.The first transistor 110A is connected
First electrode pads 111A and second electrode pad 111B material and equal in magnitude, and therefore, the equivalent capacity of first electrode pad 111A is same
Sample is Cst.Also, the capacitor in the case where assuming the first conducting wire 113A maintenance with the width the second conducting wire 113B is CstA1,
The extra capacitor of institute is CstA2 after first conducting wire 113A increases width, then the first conducting wire 113A's through overcompensation is total equivalent
Capacitor is CstA1+CstA2.In the disclosure, the range for meeting condition similar in coupled capacitor refers to the coupling of conducting wire after compensation
Capacitor and before compensating the coupled capacitor of conducting wire ratio between 0.8 to 1.2, that is, 0.8CstB≤CstA1+CstA2≤
1.2CstB.Meet the effect of coupled capacitor of this range may achieve the disclosure after overcompensation.
Though above-described embodiment 1 is with the first transistor 110A and second transistor 110B and the first electrode electricity of pad 111A and second
For two groups of structures of polar cushion 111B, but the combination of the transistor 110 and electronic pads 111 actually on control panel 1 all can compensate for
It is worth at similar in the coupled capacitor of conducting wire 113, so that the coupled capacitor of the conducting wire 113 on control panel 1 is consistent, and makes to radiate
The operation of device can be more evenly stable.
Fig. 5 A and Fig. 5 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 2.In reality
It applies in example 2, the first transistor 110A, second transistor 110B, first electrode pad 111A, second electrode pad 111B, the second conducting wire
The size of 113B is identical as shown in Fig. 3 A and Fig. 3 B as positional relationship, and the point different from embodiment 1 of embodiment 2 is
One conducting wire 113A_1 uses the design different from the first conducting wire 113A.
As shown in Fig. 5 A and Fig. 5 B, distance of the first transistor 110A apart from first electrode pad 111A is shorter, the second crystal
Distance of the pipe 110B apart from second electrode pad 111B is longer.In example 2, the width of the first conducting wire 113A_1 maintains and second
Conducting wire 113B is identical, in order to make the first conducting wire 113A_1 and the second conducting wire 113B have similar coupled capacitor, can lead first
The length compensation of line 113A_1 makes the gross area and the of the first conducting wire 113A_1 at close with the length of the second conducting wire 113B whereby
The gross area of two conducting wire 113B is close.For example, the ratio of the length of the first conducting wire 113A_1 and the length of the second conducting wire 113B
Value can be between 0.8 to 1.2, and the ratio of the gross area of the gross area of the first conducting wire 113A_1 and the second conducting wire 113B can be between
Between 0.8 to 1.2.As shown in Fig. 5 A and Fig. 5 B, the first conducting wire 113A_1 compensates the first conducting wire by a U-shaped is increased
The length of 113A_1.Specifically, the first conducting wire 113A_1 can have first part 113A_11, second part 113A_12,
Three parts 113A_13 and Part IV 113A_14.The first part 113A_11 connection second part of first conducting wire 113A_1
The of second part 113A_12 connection the Part III 113A_13, the first conducting wire 113A_1 of 113A_12, the first conducting wire 113A_1
Three parts 113A_13 connection Part IV 113A_14.The first part 113A_11 of first conducting wire 113A_1 can be along first direction
D1 extends, and the second part 113A_12 of the first conducting wire 113A_1 can extend along third direction D3, first direction D1 and third direction
D3 is different.In one embodiment, the Part III 113A_13 of the first conducting wire 113A_1 can extend along first direction D1, and first leads
The Part IV 113A_14 of line 113A_1 can extend along third direction D3, but in other embodiments, Part III 113A_13
Extending direction can be different with first part 113A_11, the extending direction of Part IV 113A_14 can be with second part 113A_
12 is different, and the disclosure does not limit.Since the size of coupled capacitor can be directly proportional to area, the gross area is close to be obtained
Similar coupled capacitor is obtained, compensates the inconsistent of RC load whereby.
In example 2, similarly, so-called " similar length " is leading through overcompensation under the width of guide line is similar
The ratio of the length of line and the length of the conducting wire without overcompensation is between 0.8 to 1.2.
Fig. 6 A and Fig. 6 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 3.In reality
It applies in example 2, the first transistor 110A, second transistor 110B, first electrode pad 111A, second electrode pad 111B, the second conducting wire
The size of 113B is identical as shown in Fig. 3, Fig. 5 as positional relationship, and the point different from embodiment 1,2 of embodiment 3 is
One conducting wire 113A_2 uses the design different from first conducting wire 113A, 113A_1.
As shown in Fig. 6 A and Fig. 6 B, distance of the first transistor 110A apart from first electrode pad 111A is shorter, the second crystal
Distance of the pipe 110B apart from second electrode pad 111B is longer.In embodiment 3, the width of the first conducting wire 113A_2 can maintain and the
Two conducting wire 113B are similar, can be by first in order to make the first conducting wire 113A_2 and the second conducting wire 113B have similar coupled capacitor
The length compensation of conducting wire 113A_2 at close with the length of the second conducting wire 113B, make whereby the gross area of the first conducting wire 113A_2 with
The gross area of second conducting wire 113B is close.As shown in Fig. 6 A and Fig. 6 B, the first conducting wire 113A_2 by be designed to one it is T-shaped come
Compensate the length of the first conducting wire 113A_2.Specifically, the first conducting wire 113A_2 can have first part 113A_21 and second
Divide 113A_22, the first part 113A_21 connection second part 113A_22 of the first conducting wire 113A_2, the first conducting wire 113A_2's
First part 113A_21 extends along first direction D1, and the second part 113A_22 of the first conducting wire 113A_2 prolongs along third direction D3
It stretches, first direction D1 is different with third direction D3.The first part 113A_21 of first conducting wire 113A_2 is compared with adjacent to first crystal
The second part 113A_22 of pipe 110A, the first conducting wire 113A_2 pad 111A compared with adjacent to first electrode.Specifically, it first leads
The first part 113A_21 and second part 113A_22 of line 113A_2 can by with along with processing procedure formed and be connected with each other, but not
As limit.In fig. 6, the mode that the first part 113A_21 of the first conducting wire 113A_2 is connected with second part 113A_22
It is only for example, in other embodiments, the first part 113A_21 and second part 113A_22 of the first conducting wire 113A_2 can be with
Different modes connect, but the disclosure is not limited.Since the size of coupled capacitor can be directly proportional to area, the gross area
It is close to obtain similar coupled capacitor, the inconsistent of RC load is compensated whereby.
Fig. 7 A and Fig. 7 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 4.In reality
It applies in example 4, the first transistor 110A, second transistor 110B, first electrode pad 111A, second electrode pad 111B, the second conducting wire
The size of 113B is identical as shown in Fig. 3, Fig. 5, Fig. 6 as positional relationship, the point different from embodiment 1,2,3 of embodiment 4
It is the first conducting wire 113A_3 using the design different from first conducting wire 113A, 113A_1,113A_2.
As shown in figs. 7 a and 7b, distance of the first transistor 110A apart from first electrode pad 111A is shorter, the second crystal
Distance of the pipe 110B apart from second electrode pad 111B is longer.In example 4, the width of the first conducting wire 113A_3 can maintain and the
Two conducting wire 113B are similar, can be by first in order to make the first conducting wire 113A_3 and the second conducting wire 113B have similar coupled capacitor
Conducting wire 113A_3 length compensation is approached at the second conducting wire 113B, makes the gross area and the second conducting wire of the first conducting wire 113A_3 whereby
The gross area of 113B is close.As shown in figs. 7 a and 7b, the first conducting wire 113A_3 is by the other side of first electrode pad 111A
It is a section lead is designed to compensate the length of the first conducting wire 113A_3 more.Specifically, the first conducting wire 113A_3 can have first
The first part 113A_31 of 113A_31, second part 113A_32 and Part V 113A_35, the first conducting wire 113A_3 is divided to connect
Meet second part 113A_32, the second part 113A_32 connection Part V 113A_35 of the first conducting wire 113A_3.First part
113A_31 extends along first direction D1, and second part 113A_32 extends along third direction D3, first direction D1 and third direction
D3 is different, and first part 113A_31 is compared with adjacent to the first transistor 110A, and second part 113A_32 is compared with adjacent to first electrode
Pad 111A.First electrode pad 111A is set to first part 113A_31 and the in the normal direction of vertical transistor substrate 11
Between five part 113A_35.Specifically, first part 113A_31, second part 113A_32 and Part V 113A_35 can
By with along with processing procedure formed and be connected with each other, but not limited to this.Part V 113A_35 can be considered the first conducting wire 113A_3
After below first electrode pad 111A, further from the part that first electrode pad 111A is extended outward.Due to coupling electricity
The size of appearance can be directly proportional to area, therefore the gross area is close can obtain similar coupled capacitor, compensates RC load whereby
It is inconsistent.
Fig. 8 A and Fig. 8 B are to show the upper schematic diagram of two group transistors and electronic pads in embodiment of the disclosure 5.In reality
It applies in example 5, the first transistor 110A, second transistor 110B, first electrode pad 111A, the size of second electrode pad 111B and position
Relationship is set with Fig. 3, Fig. 5, Fig. 6, shown in fig. 7 identical, and the point different from Examples 1 to 4 of embodiment 5 is the first conducting wire
113A_4 use the design different from first conducting wire 113A, 113A_1,113A_2,113A_3, the second conducting wire 113B_4 use with
Second conducting wire 113B different designs.
Embodiment 5 is similar with the design concept in embodiment 1, is all to make the total of each conducting wire by the width of adjustment conducting wire
Area is close.The difference is that the change width of first conducting wire 113A is small in embodiment 1, and the first conducting wire in embodiment 5
113A_4 can have different width.The change width of second conducting wire 113B is small in embodiment 1, and second in embodiment 5 is led
Line 113B_4 can have different width, and but not limited to this.For example, the first conducting wire 113A_4 can have first part
The first part 113A_41 connection second part 113A_42 of 113A_41 and second part 113A_42, the first conducting wire 113A_4,
The first part 113A_41 of first conducting wire 113A_4 extends along first direction D1, the second part 113A_ of the first conducting wire 113A_4
42 extend along third direction D3, and first direction D1 is different with third direction D3.The first part 113A_41 of first conducting wire 113A_4
111A is padded compared with adjacent to first electrode compared with the second part 113A_42 adjacent to the first transistor 110A, the first conducting wire 113A_4.
In the present embodiment, the width of the width of the first part 113A_41 of the first conducting wire 113A_4 and second part 113A_42 is not
Together.In the disclosure, so-called " width " can refer to the first part 113A_41 or second part 113A_ of the first conducting wire 113A_4
42 maximum width.Whereby, the gross area of the first conducting wire 113A_4 can be made close to the gross area of the second conducting wire 113B_4, such as made
The ratio of the gross area of the gross area of first conducting wire 113A_4 and the second conducting wire 113B_4 is between 0.8 to 1.2.Therefore,
One conducting wire 113A_4 and the second conducting wire 113B_4 can generate similar coupled capacitor, compensate the inconsistent of RC load whereby.It needs
Illustrate, the conducting wire profile in this embodiment by way of example only, can design other profiles, this public affairs in other embodiments
It opens and is not limited.
According to the above embodiments, present disclose provides a kind of radiation appliances, and it is traditional thread binding which can be a kind of day
It sets, can receive or emit the radiation of high frequency band (high frequency band can be for example between 1 gigahertz (GHZ) between 80 gigahertz (GHZ)s).By to radiation
Conducting wire in device does various designs, and the coupled capacitor that conducting wire can be made to generate is close, can enable the operation of radiation appliance more evenly
Stablize.
Above-mentioned published feature can be combined with each other in any appropriate manner with one or more published embodiments, repair
Decorations, displacement or conversion, are not limited to specific embodiment.
Although the disclosure is disclosed as above with preferred embodiment, so it is only that exemplary reference is not limited to the disclosure,
Anyone skilled in the art are not departing from spirit and scope of the present disclosure, when can make a little modification and it is perfect, therefore on
It states embodiment and is not limited to the scope of the present disclosure, the protection scope of the disclosure, which is worked as, to be subjected to the definition of the claims.
Claims (10)
1. a kind of radiation appliance, characterized by comprising:
One transistor base；
One the first transistor and a second transistor, are set on the transistor base；
One first electrode pad and a second electrode pad, are set on the transistor base, the first electrode pad adjacent to this first
Transistor setting, the second electrode pad are arranged adjacent to the second transistor；And
One first conducting wire and one second conducting wire, are set on the transistor base, the first transistor through first conducting wire with
The first electrode pad is electrically connected, which is electrically connected through second conducting wire and the second electrode pad,
Wherein, the distance between the first transistor and the first electrode pad be less than the second transistor and the second electrode pad it
Between distance, and the ratio of the gross area of the gross area of first conducting wire and second conducting wire is between 0.8 to 1.2.
2. radiation appliance as described in claim 1, it is characterised in that: the length of the length of first conducting wire and second conducting wire
Ratio between 0.8 to 1.2.
3. radiation appliance as described in claim 1, it is characterised in that: first conducting wire has a first part along a first party
To extension, which there is a first part to extend along a second direction, and the width of the first part of first conducting wire
Degree is greater than the width of the first part of second conducting wire.
4. radiation appliance as described in claim 1, it is characterised in that: first conducting wire has a first part and one second
Point, the first part of first conducting wire connects the second part, and the first part of first conducting wire prolongs along a first direction
It stretches, the second part of first conducting wire extends along a third direction, and the first direction is different with the third direction.
5. radiation appliance as claimed in claim 4, it is characterised in that: first conducting wire has more a Part III and one the 4th
The second part of part, first conducting wire connects the Part III, and the Part III of first conducting wire connects the 4th
Point, the Part III of first conducting wire extends along the first direction, and the Part IV of first conducting wire is along the third party
To extension.
6. radiation appliance as claimed in claim 4, it is characterised in that: first conducting wire has more a Part V, this first
The second part of conducting wire connects the Part V, which is set between the first part and the Part V.
7. radiation appliance as claimed in claim 4, it is characterised in that: the width of the first part of first conducting wire and this
Two parts it is of different size.
8. radiation appliance as described in claim 1, it is characterised in that: further include:
A pair of of side group plate, is correspondingly arranged with the transistor base；
One dielectric layer is set between the opposite side substrate and the transistor base；And
A pair of of lateral electrode is set on a surface of the opposite side substrate, the surface of the opposite side substrate adjacent to the dielectric layer,
Wherein, this forms a modulated unit to a part of lateral electrode and the first electrode pad.
9. radiation appliance as claimed in claim 8, it is characterised in that: first conducting wire is formed a part of of lateral electrode with this
One first coupled capacitor, second conducting wire form one second coupled capacitor, and first coupling to a part of of lateral electrode with this
Capacitor and the ratio of second coupled capacitor are between 0.8 to 1.2.
10. radiation appliance as claimed in claim 8, it is characterised in that: the radiation appliance is an antenna assembly,
The transistor base, the dielectric layer and the opposite side substrate form a control panel,
The modulated unit in the control panel controls dielectric layer transmitting or receives a high frequency radiation signal.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/000,312 US20190013277A1 (en) | 2017-07-06 | 2018-06-05 | Radiation device |
| EP18177984.4A EP3425726A1 (en) | 2017-07-06 | 2018-06-15 | Control panel and radiation device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762528999P | 2017-07-06 | 2017-07-06 | |
| US62/528,999 | 2017-07-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109216886A true CN109216886A (en) | 2019-01-15 |
Family
ID=64990647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810019555.9A Pending CN109216886A (en) | 2017-07-06 | 2018-01-09 | Radiation appliance |
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| Country | Link |
|---|---|
| CN (1) | CN109216886A (en) |
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| WO2023115475A1 (en) * | 2021-12-23 | 2023-06-29 | 京东方科技集团股份有限公司 | Liquid crystal antenna |
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Application publication date: 20190115 |