CN109216579A - Luminous display unit - Google Patents

Luminous display unit Download PDF

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Publication number
CN109216579A
CN109216579A CN201810696558.6A CN201810696558A CN109216579A CN 109216579 A CN109216579 A CN 109216579A CN 201810696558 A CN201810696558 A CN 201810696558A CN 109216579 A CN109216579 A CN 109216579A
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CN
China
Prior art keywords
bending pattern
pixel
display unit
layer
luminous display
Prior art date
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Granted
Application number
CN201810696558.6A
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Chinese (zh)
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CN109216579B (en
Inventor
金秀刚
具沅会
张志向
赵昭英
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LG Display Co Ltd
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LG Display Co Ltd
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Publication date
Application filed by LG Display Co Ltd filed Critical LG Display Co Ltd
Priority to CN202010566724.8A priority Critical patent/CN111640778A/en
Priority to CN202010565691.5A priority patent/CN111640777A/en
Publication of CN109216579A publication Critical patent/CN109216579A/en
Application granted granted Critical
Publication of CN109216579B publication Critical patent/CN109216579B/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2003—Display of colours
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs

Abstract

Disclose a kind of luminous display unit, its light extraction efficiency for helping to improve pixel simultaneously maximizes the light extraction efficiency of each pixel, wherein, the luminous display unit includes: the substrate with first area and second area, coating is planarized, be arranged on substrate and is configured to the second bending pattern of the first bending pattern and arrangement on the second region with arrangement on the first region；And it is arranged in the emitter on the first bending pattern and the second bending pattern, wherein, from the first bending pattern overlap planarization coating thickness and with the second bending pattern overlap the planarization thickness of coating it is different, and each of the first bending pattern and the second bending pattern include have 0.4 to 0.6 aspect ratio multiple protrusion parts.

Description

Luminous display unit
Cross-reference to related applications
This application claims in the South Korea patent application submitted the 10-2017-0083811st equity on June 30th, 2017, It is fully incorporated herein as fully expounded herein by reference.
Technical field
This disclosure relates to luminous display unit.
Background technique
Luminous display unit is self-emission display apparatus, and because different from liquid crystal display device, it is not needed individually Light source, therefore can be manufactured with lightweight and slim size.In addition, luminous display unit is advantageous from the point of view of power consumption And be also for response speed it is excellent, thus luminous display unit is studied as next generation display.
Luminous display unit is shown according to the luminous of the emitter that includes insertion emission layer between two electrodes Image.In this case, outside is emitted to by electrode and substrate by the light of the luminous generation of emitter.
However, due to being all-trans on the interface between emission layer and electrode or the interface between substrate and air layer It penetrates, some light generated from the emission layer of luminous display unit are not emitted to outside, and thus reducing light extraction efficiency.Cause This, low light extraction efficiency causes the increase of the reduction of brightness and power consumption in luminous display unit.
Summary of the invention
Therefore, various aspects of the disclosure is related to a kind of substantially eliminating limitation and disadvantage due to the relevant technologies and leading The luminous display unit of one or more problems caused and a kind of display equipment including the luminous display unit.
An aspect of this disclosure is intended to provide a kind of light extraction efficiency for helping to improve pixel and makes every in pixel The maximized luminous display unit of a light extraction efficiency.
The other advantage and feature of various aspects of the disclosure, and these will be set forth in part in the description which follows Advantages and features will be in part apparent for those of ordinary skills when for following investigate, or It can know from the practice of various aspects of the disclosure.By in written description and its claim and attached drawing institute it is specific The structure pointed out may be implemented and obtain the purpose and other advantages of various aspects of the disclosure.
In order to achieve these and other advantages and according to the purpose of various aspects of the disclosure, such as embody herein With it is broadly described, provide a kind of luminous display unit, may include: the substrate with first area and second area； Coating is planarized, be arranged on substrate and is configured to the first bending pattern and arrangement arranged on the first region The second bending pattern on the second region；And it is arranged in the emitter on the first bending pattern and the second bending pattern, Wherein, the thickness of the thickness of the planarization coating overlapped with the first bending pattern and the planarization coating overlapped with the second bending pattern Degree is different, and each of the first bending pattern and the second bending pattern include the multiple convex of the aspect ratio with 0.4 to 0.6 Part out.
It should be appreciated that the aforementioned general description and following detailed description of various aspects of the disclosure are exemplary and say Bright property, and it is intended to provide the further explanation to the disclosure claimed.
Detailed description of the invention
Various aspects of the disclosure is further understood with providing including attached drawing, and attached drawing is incorporated into the application and structure At a part of the application, attached drawing shows various aspects of the disclosure, and is used to illustrate the disclosure together with specification The principle of various aspects.
In the accompanying drawings:
Fig. 1 shows the luminous display unit according to various aspects of the disclosure；
Fig. 2 is the equivalent circuit diagram of the first pixel shown in Fig. 1；
Fig. 3 is the sectional view for showing structure in each of the first pixel to third pixel shown in Fig. 1；
Fig. 4 is the sectional view for showing the structure of the 4th pixel shown in Fig. 1；
Fig. 5 is the enlarged drawing for showing part " A " shown in Fig. 3；
Fig. 6 is the plan view for showing the planar structure of the first bending pattern shown in Fig. 3；
Fig. 7 is the enlarged drawing for showing part " B " shown in Fig. 4；
Fig. 8 A to Fig. 8 C show the first bending pattern for being used to form in the luminous display unit according to the disclosure and The mask arrangement of second bending pattern；
Fig. 9 be show the first pixel shown in Fig. 1 to third pixel structure sectional view；And
Figure 10 is the sectional view for showing the structure of the 4th pixel shown in Fig. 1.
Specific embodiment
Referring to the exemplary various aspects of the disclosure, these exemplary embodiment party will be shown in the attached drawings in detail now The example of formula.In the conceived case, the same or similar part will be referred to using identical appended drawing reference through attached drawing.It will The following aspect described by referring to accompanying drawing is come the advantages of illustrating the disclosure and feature and its implementation.However, it is possible to Different forms implements the disclosure and the disclosure should not be construed as limited to various aspects set forth herein.Instead, this A little aspects are provided so that the disclosure will be full and complete, and will be to those skilled in the art's totally tansitive disclosure Interior range.In addition, the disclosure is only limited by the range of claims.
It is only for describing shape, size, ratio, angle, number disclosed in the attached drawing of various aspects of the disclosure Example, and therefore the present disclosure is not limited to shown details.Through the disclosure, similar appended drawing reference refers to similar member Part.In the following description, when related known function or the detailed description of configuration are confirmed as unnecessarily having obscured the disclosure When emphasis, it is described in detail omitting.
Using " comprising " described in the disclosure, " having " and "comprising", unless using " only ", otherwise may be used To add another part.Unless the contrary indication, otherwise the term of singular may include plural form.
When explaining element, although element is interpreted as including error band without explicitly describing.
When describing positional relationship, for example, when location order is described as " ... on ", " in ... top ", " ... lower section " and " ... side " when, it may include non-contacting situation, unless using " immediately " or " direct ".
When describing time relationship, for example, when time sequencing is described as " ... after ", " subsequent ", " then " with And " ... before " when, it may include discontinuous situation, unless having used " just " or " direct ".
It will be appreciated that though term " first ", " second " etc. can be used for describing various elements, but these yuan herein Part should not be limited by these terms.These terms are only used to distinguish an element and another element.For example, not taking off In the case where the scope of the present disclosure, first element can be referred to as second element, and similarly, and second element can be claimed For first element.
In addition, it is to be appreciated that term "at least one" includes all combinations relevant to any one project.For example, " the At least one of one element, second element and third element " may include selected from first element, second element and third element Two or more elements all combinations and each element in first element, second element and third element.In addition, If referring to that first element is located at second element "upper" or " top ", it should be appreciated that first element and second element can be with those This contact or third element are inserted between first element and second element.
As those skilled in the art can fully understand, the feature of various aspects of the disclosure can be partially or completely Ground is coupled to each other or combination, and coordination with one another and can technically be driven in various ways.Various aspects of the disclosure It can implement independently of one another or can be implemented together with complementary relationship.
Hereinafter, it will be described in detail with reference to the accompanying drawings the luminous display unit according to various aspects of the disclosure.
Fig. 1 shows luminous display unit according to one aspect of the disclosure.
Referring to Fig.1, luminous display unit according to one aspect of the disclosure may include pixel array unit 10, control electricity Road 30, data drive circuit 50 and gate driving circuit 70.
Pixel array unit 10 may include a plurality of grid line (GL) being arranged on substrate and multiple data lines (DL), and The multiple pixels being formed in each pixel region limited by the intersection of a plurality of grid line (GL) and multiple data lines (DL) 12a, 12b, 12c and 12d.
Grid signal that each basis in multiple pixel 12a, 12b, 12c and 12d is provided from adjacent gate polar curve (GL) and The data-signal provided from adjacent data line (DL) shows image.Each of multiple pixel 12a, 12b, 12c and 12d include cloth The hair setting the pixel circuit in the pixel region limited by grid line (GL) and data line (DL) and being connect with pixel circuit Injection device.Each of pixel 12a, 12b, 12c and 12d may include at least two thin film transistor (TFT)s and at least one capacitor Device.Each of pixel 12a, 12b, 12c and 12d may include that itself luminous selfluminous device is mentioned with basis from pixel circuit The data-signal of confession shows image.Herein, selfluminous device can be organic light emitting apparatus, quantum dot light emitting device or nothing Machine light emitting device.
Each of multiple pixel 12a, 12b, 12c and 12d can be defined as the minimum unit for issuing virtual optical Region can be represented as sub-pixel.At least four adjacent pixel 12a, 12b, 12c and 12d may be constructed for showing coloured silk One unit pixel 12 of chromatic graph picture.According on one side, a unit pixel 12 may include the length along grid line (GL) Direction the first pixel disposed adjacent one another is to the 4th pixel 12a, 12b, 12c and 12d.According to other side, a unit Pixel 12 may include along the length direction of data line (DL) the first pixel disposed adjacent one another to the 4th pixel 12a, 12b, 12c and 12d.In the case where unit pixel 12, it is connect with the gate driving circuit 70 of the circuit structure with relative simplicity Grid line (GL) number increase, however, the number being connect with the data drive circuit 50 with relative complex circuit structure It is reduced according to the number of line (DL).According on the other hand, a unit pixel 12 may include along grid line (GL) and data line (DL) the first pixel disposed adjacent one another is to the 4th pixel 12a, 12b, 12c and 12d.Here, the first pixel 12a can be it is red Color pixel, the second pixel 12b can be green pixel, and third pixel 12c can be blue pixel, and the 4th pixel 12d can To be white pixel.
Control circuit 30 is based on data-signal in the generation of each pixel and multiple pixel 12a, 12b, 12c and 12d Each corresponding pixel data.For example, control circuit 30 is based on picture signal (that is, the red input of each unit pixel 12 Data, green input data and blue input data) white pixel data are extracted, by being inputted from red input data, green Each of data and blue input data subtract white pixel data to calculate red pixel data, green pixel data and indigo plant Color pixel data make the red pixel data calculated, green pixel data, blue pixel data and white according to pixel arragement construction Color pixel data alignment, and the data of alignment are provided to data drive circuit 50.
Control circuit 30 is based on time synchronization signals and generates data controlling signal, and data controlling signal is provided to data Driving circuit 50.Control circuit 30 generates the grid including initial signal and multiple gate clock signals based on time synchronization signals Signal is controlled, and grid control signal is provided to gate driving circuit 70.
Data drive circuit 50 is connect with the multiple data lines (DL) being arranged in pixel array unit 10.Data drive circuit 50 receive the data controlling signal and pixel data of each pixel provided from control circuit 30, and receive and provide from power circuit Multiple reference gamma voltages.Data drive circuit 50 will be each by using data controlling signal and multiple reference gamma voltages The pixel data of pixel is converted to the simulation pixel data-signal of analog type, and simulation pixel data-signal is provided to pair The data line (DL) answered.
Gate driving circuit 70 is connect with a plurality of grid line (GL) being arranged in pixel array unit 10.Gate driving circuit 70 generate grid signal according to preset order based on the grid control signal provided from control circuit 30, and grid signal is provided To corresponding grid line (GL).
Gate driving circuit 70 according to one aspect of the disclosure can be according to the manufacturing process and base of thin film transistor (TFT) One edge of plate or two edges are integrated, and can be connect by one-to-one relationship with a plurality of grid line (GL).According to The gate driving circuit 70 of an aspect of this disclosure can be formed in integrated circuits, can be set in substrate or flexible circuit On film, and it can be connect by one-to-one relationship with a plurality of grid line (GL).
Fig. 2 is the equivalent circuit diagram of the first pixel shown in Fig. 1.
Referring to Fig. 2, the first pixel 12a of luminous display unit according to one aspect of the disclosure includes pixel circuit (PC) and emitter (ED).
Pixel circuit (PC) is disposed in the circuit region of the pixel region limited by grid line (GL) and data line (DL) In, and connect with adjacent grid line (GL) and data line (DL) and the first driving power (VDD).In response to from grid line (GL) gate-on signal (GS) provided, pixel circuit (PC) is according to the data voltage (Vdata) provided from data line (DL) To control shining for emitter (ED).Pixel circuit (PC) according to one aspect of the disclosure may include switch film crystalline substance Body pipe (ST), driving thin film transistor (TFT) (DT) and capacitor (Cst).
Switching thin-film transistor (ST) may include the gate electrode connecting with grid line (GL), connect with data line (DL) First source/drain electrode and the second source/drain electrode being connect with the gate electrode of driving thin film transistor (TFT) (DT).Switching thin-film transistor (ST) it is connected by being provided to the gate-on signal (GS) of grid line (GL), thus will be provided to the data electricity of data line (DL) Pressure (Vdata) is provided to the gate electrode of driving thin film transistor (TFT) (DT).
Driving thin film transistor (TFT) (DT) may include the grid connecting with the second source/drain electrode of switching thin-film transistor (ST) It electrode, the first source/drain electrode (or drain electrode) being connect with the first driving power (VDD) and connect with emitter (ED) Second source/drain electrode (or source electrode).Based on the data voltage (Vdata) provided from switching thin-film transistor (ST), drive thin Film transistor (DT) is connected by grid-source voltage, thus drives thin film transistor (TFT) (DT) control from the first driving power (VDD) It is provided to the data-signal of emitter (ED).
Capacitor (Cst) is connected between the gate electrode and source electrode of driving thin film transistor (TFT) (DT).Capacitor (Cst) is deposited Voltage corresponding with driving data voltage (Vdata) of gate electrode of thin film transistor (TFT) (DT) is provided to is stored up, and by being deposited The voltage turn-on of storage drives thin film transistor (TFT) (DT).In this case, capacitor (Cst) keeps driving thin film transistor (TFT) (DT) On state, until by switching thin-film transistor (ST) data voltage (Vdata) is provided to next frame until.
Emitter (ED) is disposed in the emitting area of pixel region, and wherein emitter (ED) is according to electric from pixel The data-signal that road (PC) provides shines.According to one aspect of the disclosure, emitter (ED) may include and driving film The first electrode of the source electrode connection of transistor (DT), the second electrode that is connect with the second driving power (VSS) and first The emission layer arranged between electrode and second electrode.Herein, emission layer may include organic luminous layer, inorganic light emitting layers and Any one in quantum dot light emitting layer, or may include organic luminous layer (or inorganic light emitting layers) and quantum dot light emitting layer Deposit structure or composite structure.
First pixel 12a of luminous display unit according to one aspect of the disclosure is according to driving thin film transistor (TFT) (DT) Grid-source voltage control the data-signal for being provided to emitter (ED), and emitter (ED) is shone, from And show predetermined image.In an identical manner, the structure in each of second pixel to the 4th pixel 12b, 12c and 12d with The structure of first pixel 12a is identical.
Fig. 3 is the sectional view for showing structure in each of the first pixel to third pixel shown in Fig. 1.Fig. 4 is to show The sectional view of the structure of 4th pixel shown in Fig. 1 out.
In conjunction with Fig. 1 referring to Fig. 3 and Fig. 4, the luminous display unit according to the disclosure may include substrate 100, transistor layer, Color-filter layer 150, planarization coating 170 and emitter (ED).
In general, substrate 100 can be formed by glass material.Substrate 100 can be by the transparent plastic that can be bent or bend Material such as polyimide material is formed.If using plastic material, due to executing high-temperature deposition process on the substrate 100, institute It can be by having the polyimides of high-fire resistance that at high temperature can be durable to be formed with substrate 100.The entire front surface of substrate 100 It can be covered by least one buffer layer 110.
Buffer layer 110 prevents from including height that material in substrate 100 is diffused into the manufacturing process for thin film transistor (TFT) The transistor layer of warm technique.In addition, buffer layer 110 prevents water or moisture penetration in emitter (ED).Buffer layer 110 can be with It is formed by Si oxide or silicon nitride.Selectively, it is convenient to omit buffer layer 110.
Substrate 100 may include display area and the non-display area around display area.
Display area may include having first area (A1) and the second area (A2) adjacent with first area (A1) Multiple unit pixel regions.
First area (A1) include be respectively arranged the first pixel to third pixel 12a, 12b and 12c the first subregion extremely Third subregion (SA1, SA2, SA3).The first pixel 12a is arranged on the first subregion (SA1), at the second subregion (SA2) The second pixel 12b of upper arrangement, and third pixel 12c is arranged on third subregion (SA3).First subregion is to third sub-district Each of domain (SA1, SA2 and SA3) includes circuit region (CA) and emitting area (EA or open area).
Second area (A2) includes the 4th subregion (SA4) for being provided with the 4th pixel 12d.
Each of first subregion to the 4th subregion (SA1, SA2, SA3 and SA4) includes circuit region (CA) and sends out Penetrate region (EA).
Transistor layer may include be arranged in it is every in the first subregion to the 4th subregion (SA1, SA2, SA3 and SA4) Driving thin film transistor (TFT) (DT) in the circuit region (CA) of a middle restriction.
Driving thin film transistor (TFT) (DT) according to one aspect of the disclosure include active layer 111, gate insulating film 113, Gate electrode 115, passivation layer 117, drain electrode 119d and source electrode 119s.
Active layer 111 includes the driving film crystalline substance for being formed in the circuit region (CA) limited on substrate 100 or buffer layer 110 Drain region 111d and source area 111s and channel region 111c in the domain of body area under control.Active layer 111 may include by etching work The etching gas of skill becomes the drain region 111d and source area 111s of conductor and does not become the channel region 111c of conductor.This In the case of, drain region 111d and source area 111s are parallel to each other, and channel region 111c is inserted in drain region 111d and source area Between 111s.
Active layer 111 according to one aspect of the disclosure can by with amorphous silicon, polysilicon, oxide and organic material In any one corresponding semiconductor material formed, but be not limited to these materials.For example, according to the active layer of the disclosure 111 can be by the oxidation of such as zinc oxide, tin-oxide, Ga-In-Zn oxide, In-Zn oxide or In-Sn oxide Object material is formed, or can be by the oxide material shape doped with ion of such as Al, Ni, Cu, Ta, Mo, Zr, V, Hf and Ti At.
Gate insulating film 113 is formed on the channel region 111c of active layer 111.Gate insulating film 113 is not formed in slow It rushes in the entire front surface including active layer 111 of layer 110 or substrate 100, but only on the channel region 111c of active layer 111 Be formed as island.
Gate electrode 115 is formed in overlapping with the channel region 111c of active layer 111 simultaneously on gate insulating film 113.Gate electrode 115 are used as mask, to prevent the channel region of active layer 111 due to carrying out by using etch process to gate insulating film 113 Etching gas used in patterned technique becomes conductor.Gate electrode 15 can be formed as molybdenum (Mo), aluminium (Al), chromium (Cr), The single layer structure of one of gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and its alloy, or molybdenum can be formed as (Mo), the multilayer knot of one of aluminium (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and its alloy Structure.
Passivation layer 117 is formed on the drain region 111d and source area 111s of gate electrode 115 and active layer 111.Namely It says, passivation layer 117 is formed in the entire front surface of buffer layer 110 or substrate 100, thus covering grid electrode 115 and active The drain region 111d and source area 111s of layer 111.Passivation layer 117 can be by such as Si oxide (SiOx) or silicon nitride (SiNx) inorganic material is formed, or can be formed by the organic material of such as benzocyclobutene or light acrylic. Selectively, passivation layer 117 can be indicated by the term of such as insulating interlayer.
Drain electrode 119d connects via first overlapping with the drain region 111d of active layer 111 being arranged in passivation layer 117 Contact hole is electrically connected with the drain region 111d of active layer 111.
Source electrode 119s connects via second overlapping with the source area 111s of active layer 111 being arranged in passivation layer 117 Contact hole is electrically connected with the source area 111s of active layer 111.
Drain electrode 119d and source electrode 119s can be formed by identical metal material.For example, drain electrode 119d and source electricity Each of pole 119s can be formed as selected from molybdenum (Mo), aluminium (Al), chromium (Cr), golden (Au), titanium (Ti), nickel (Ni), neodymium (Nd), The single layer structure of any one in copper (Cu) and its alloy, or can be formed as molybdenum (Mo), aluminium (Al), chromium (Cr), golden (Au), The multilayered structure of one of titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and its alloy.
In addition, circuit region can also include switching thin-film transistor and capacitor.
Switching thin-film transistor is identical as driving thin film transistor (TFT) in structure, and switching thin-film transistor is arranged in electricity On road region (CA), therefore by omission to the detailed description of switching thin-film transistor.
In the case where being inserted into passivation layer 117 therebetween, in the source electrode 119s and gate electrode of driving thin film transistor (TFT) (DT) Capacitor is disposed in the overlapping region to overlap each other between 115.
In addition, threshold voltage may be deviated because of light in circuit region (CA) in the case where arrangement transistor.In order to This phenomenon is prevented, can also include the light shield layer for being arranged in 111 lower section of active layer according to the luminous display unit of the disclosure 101。
Light shield layer 101 is disposed between substrate 100 and active layer 111, allows to stop to be incident on by substrate 100 Light on active layer 111, to prevent the variation of threshold voltage in the transistor as caused by environment light or make to be drawn by environment light The variation of threshold voltage minimizes in the transistor risen.Light shield layer 101 is covered by buffer layer 110.Selectively, light shield layer 101 It is electrically connected with the source electrode of transistor, thus light shield layer 101 may be used as the lower gate electrode of respective transistor.In such case Under, the variation of the threshold voltage of transistor can be prevented according to bias and the characteristic variations as caused by light or makes transistor Threshold voltage variation and the characteristic variations as caused by light minimize.
Insulating layer 130 is disposed in the whole region of substrate 100 with covering transistor layer.That is, insulating layer 130 It covers passivation layer 170 and drives the drain electrode 119d and source electrode 119s of thin film transistor (TFT) (DT).According to the one of the disclosure The insulating layer 130 of aspect can be formed by the inorganic material of such as Si oxide (SiOx) and silicon nitride (SiNx).Selectivity Ground, insulating layer 130 can be indicated by the term of such as passivation layer.
Color-filter layer 150 is disposed on the insulating layer 130 overlapping with the emitting area (EA) of first area (A1).Also To say, color-filter layer 150 with island be arranged in in each of the first subregion to third subregion (SA1, SA2 and SA3) The overlapping insulating layer 130 of emitting area (EA) on.Color-filter layer 150 will be emitted to the white of substrate 100 from emitter (ED) Light becomes the colored light with the color being preset in respective pixel.
Color-filter layer 150 according to one aspect of the disclosure includes colour filter, which only transmits from emitter (ED) it is emitted to the wavelength for the light being preset in respective pixel in the white light of substrate 100.For example, color-filter layer 150 may include The red color filter that is arranged on the emitting area (EA) of the first subregion (SA1 or the first pixel) is arranged in the second subregion Green color filter on the emitting area (EA) of (SA2 or the second pixel) and it is arranged in third subregion (SA3 or third picture Element) emitting area (EA) on blue color filter.
Color-filter layer 150 according to another aspect of the present disclosure includes quantum dot layer, which has being capable of basis The white light for being emitted to substrate 100 from emitter (ED) emits the ruler for the light being preset in respective pixel by using emitting again It is very little.In this case, quantum dot layer may include CdS, CdSe, CdTe, ZnS, ZnSe, GaAs, GaP, GaAs-P, Ga-Sb, The quantum dot of a formation in InAs, InP, InSb, AlAs, AlP or AlSb.For example, being arranged in the first subregion (SA1 or One pixel) emitting area (EA) on quantum dot layer may include CdSe or InP quantum dot, be arranged in the second subregion Quantum dot layer on the emitting area (EA) of (SA2 or the second pixel) may include the quantum dot of CdZnSeS, and be arranged in Quantum dot layer on the emitting area (EA) of three subregions (SA3 or third pixel) may include the quantum dot of ZnSe.If filter Color device layer 150 is formed by quantum dot layer, then the luminous display unit that there is fine color to realize may be implemented.
Color-filter layer 150 according to another aspect of the present disclosure may include the colour filter containing quantum dot.
Meanwhile color-filter layer 150 is not formed in second area (A2), i.e. the 4th subregion (SA4).That is, the 4th picture Plain 12d corresponds to the white sub-pixels in addition provided, to improve the white brightness of unit pixel 12.With the first pixel to third picture Plain 12a, 12b do not need color-filter layer 150 with 12c difference, the 4th pixel 12d.Therefore, it is not provided in the 4th pixel 12d Color-filter layer 150.
Planarization coating 170 is disposed in the whole region of substrate 100 to cover insulating layer 130 and color-filter layer 150. Planarizing coating 170 has relatively large thickness, allows to provide planarization surface on the substrate 100.According to the disclosure The planarization coating 170 of one aspect can be by such as light acrylic, benzocyclobutene, polyimides and fluororesin Organic material formed.
Planarization coating 170 according to the disclosure may include flat surfaces, the bending of the first bending pattern 180-1 and second Pattern 180-2.
Flat surfaces are disposed on front surface (or upper surface) 170a of planarization coating 170, for covering the firstth area Residual circuit region (CA) in domain (A1) and second area (A2) other than emitting area (EA).
First area (A1) i.e. planarize coating 170 be arranged in the first subregion to third subregion (SA1, SA2 and SA3 the first bending pattern 180-1 is disposed in the front surface in emitting area in each of) (EA).
First bending pattern 180-1 has in the planarization coating 170 overlapping with the emitting area of respective pixel (EA) Bending (or uneven) pattern, allows to change the travel path from emitter (ED) light emitted, to improve pixel Light extraction efficiency.In this case, the first bending pattern 180-1 is arranged to covering color-filter layer 150, so that with first The thickness of the overlapping planarization coating 170 of the thickness ratio and circuit region (CA) of bending pattern 180-1 overlapping planarization coating 170 It spends relatively small.
The first bending pattern 180-1 according to one aspect of the disclosure includes being arranged in emitter (ED) and colour filter Multiple first protrusion parts 181 and multiple first concave portions 183 between layer 150.
Multiple first protrusions parts 181 is each arranged in overlapping with color-filter layer 150 in planarization coating 170 On emitting area (EA).Multiple first protrusions part 181 changes the traveling of the light emitted from emitter (ED) towards substrate 100 Path allows to improve the light extraction efficiency of the light emitted from the emitter (ED) being arranged in corresponding pixel.For this purpose, Multiple first protrusions part 181 can have 0.4 to 0.6 aspect ratio.Herein, in multiple protrusion parts 181 in length and breadth Than indicating the ratio between half width (or radius) and height (H1) in multiple protrusion parts 181.It will be described in multiple first later Protrude part 181.
Each of multiple first concave portions 183 are arranged in the front surface 170a of planarization coating 170.Namely It says, each of multiple first concave portions 183 can be set between multiple first protrusions part 181, or can be more A first protrusion part 181 surrounds.Relative to the front surface 170a of planarization coating 170, multiple first concave portions 183 can be with Depth having the same.However, due to the foozle for carrying out patterned technique to the first bending pattern 180-1, Duo Ge Some in one concave portion 183 may have different depth.
Bottom surface (or lowest surface) in each of multiple first concave portions 183 with color-filter layer 150 to separate The mode of predetermined space is arranged.The front surface of color-filter layer 150 is directly exposed to the first concave portion 183 up to first in order to prevent Minimum range between the bottom surface and color-filter layer 150 of first concave portion 183 is set in by the depth of concave portion 183 In the range of 0.1 micron to 3 microns (μm).In this case, color-filter layer 150 and the first concave portion 183 are arranged in Planarization coating 170 between bottom surface has 0.1 micron to 3 microns (μm) of thickness.
Being arranged in the emitting area (EA) of the 4th subregion (SA4) of coating 170 is planarized in second area (A2) Front surface in be disposed with the second bending pattern 180-2.
Second bending pattern 180-2 is in the region overlapping with the emitting area (EA) of the 4th pixel of planarization coating 170 In there is bending (or uneven) pattern, allow to change the travel path from emitter (ED) light emitted, to mention The light extraction efficiency of high pixel.In this case, the second bending pattern 180-2 is arranged to covering and the 4th subregion (SA4) the overlapping insulating layer 130 of emitting area (EA), so that the planarization coating 170 overlapped with the second bending pattern 180-2 Thickness ratio and first area (A1) the overlapping planarization coating 170 of the first bending pattern 180-1 thickness it is relatively large.Cause This, the thickness for being arranged in the planarization coating 170 between color-filter layer 150 and the bottom surface of the first bending pattern 180-1 can be with Less than the thickness for the planarization coating 170 being arranged between substrate 100 and the bottom surface of the second bending pattern 180-2.
The second bending pattern 180-2 according to one aspect of the disclosure includes multiple second protrusions parts 185 and multiple Second concave portion 187.
Each of multiple second protrusions part 185 is arranged in handing in planarization coating 170 with the 4th subregion (SA4) On folded emitting area (EA).Multiple second protrusions part 185 changes the light emitted from emitter (ED) towards substrate 100 Travel path allows to improve the light extraction efficiency of the light emitted from the emitter (ED) being arranged in the 4th pixel.It is more Each of a second protrusion part 185 may protrude part with multiple first be arranged in first area (A1) in shape Each of 181 is identical.In the foozle for Patternized technique, multiple second protrusions each of part 185 can be with In shape be arranged in first area (A1) it is multiple first protrusion part 181 in each difference.In detail, Duo Ge Two protrusion parts 185 can have 0.4 to 0.6 aspect ratio.It will be described in multiple second protrusions part 185 later.
Each of multiple second concave portions 187 are formed as the concave shape of the front surface 170a from planarization coating 170 Shape.That is, each of multiple second concave portions 187 can be set between multiple second protrusions part 185, or It can be surrounded by multiple second protrusions part 185.Relative to the front surface 170a of planarization coating 170, multiple second concave portions 187 are divided to can have identical depth.However, since the manufacture for carrying out patterned technique to the second bending pattern 180-2 misses Difference, some in multiple second concave portions 187 may have different depth.
Emitter (ED) emits light towards substrate 100 according to bottom-emission type.According to one aspect of the disclosure Emitter (ED) includes first electrode (E1), emission layer (EL) and second electrode (E2).
First electrode (E1) in the emitting area (EA) for being arranged in all subregion (SA1, SA2, SA3 and SA4) first Be formed as island on bending pattern 180-1, and be electrically connected with the source electrode 119s of driving thin film transistor (TFT) (DT).In this feelings Under condition, one end adjacent with circuit region (CA) of first electrode (E1) extends to the source electrode of driving thin film transistor (TFT) (DT) 119s, then via the contact hole (CH) and driving thin film transistor (TFT) (DT) being arranged in planarization coating 170 and insulating layer 130 Source electrode 119s electrical connection.When first electrode (E1) and the first bending pattern 180-1 are directly contacted, first electrode (E1) packet Include the bending pattern with shape corresponding with the shape of the first bending pattern 180-1.
First electrode (E1) can be the anode electrode of emitter (ED).The first electricity according to one aspect of the disclosure Pole (E1) can be by being transmissive to be emitted to transparent conductive oxide (TCO) such as indium of the light of substrate 100 from emission layer (EL) Tin-oxide (ITO) or indium-zinc oxide (IZO) formation.
Emission layer (EL) is formed in the whole region of first area (A1) and second area (A2), and and first electrode (E1) it is electrically connected.In this case, when overlapping with the emitting area (EA) of each subregion (SA1, SA2, SA3 and SA4) When the front surface of emission layer (EL) and first electrode (E1) directly contact, emission layer (EL) include have in first electrode (E1) Front surface the corresponding shape of shape bending pattern.Therefore, with the emitter region of each subregion (SA1, SA2, SA3, SA4) The overlapping emission layer (EL) in domain (EA) includes the bending pattern with shape corresponding with the shape of the first bending pattern 180-1.
Emission layer (EL) according to one aspect of the disclosure includes two or more emission parts for emitting white light Point.For example, emission layer (EL) may include for by the way that the first light and the second light are mixed together to the first of transmitting white light Emitting portion and the second emitting portion.Herein, the first emitting portion is provided to emit the first light, wherein the first emitting portion It can be in blue emission part, green emitted part, red emission part, yellow emission part and yellow green emitting portion Any one.Second emitting portion may include for emitting in its color and blue, green, red, yellow and yellow green The emitting portion of the light of the complementary colors of first light.
Second electrode (E2) is formed on emission layer (EL), and is electrically connected with emission layer (EL).In this case, when Overlapping second electrode (E2) and emission layer (EL) with the emitting area (EA) of each subregion (SA1, SA2, SA3 and SA4) When front surface directly contacts, second electrode (E2) includes having shape corresponding with the shape of front surface in emission layer (EL) Bending pattern.Therefore, the second electrode (E2) overlapping with the emitting area (EA) of each subregion (SA1, SA2, SA3 and SA4) Including the bending pattern with shape corresponding with the shape of the first bending pattern 180-1.
Second electrode (E2) according to one aspect of the disclosure can be the cathode electrode of emitter (ED).According to this The second electrode (E2) of disclosed one aspect may include metal material with high reflectivity, to reflect from emission layer (EL) It is emitted to the light of substrate 100.For example, second electrode (E2) can be formed as multilayered structure, such as the deposition structure of aluminium and titanium (Ti/Al/Ti), the deposition structure (ITO/Al/ITO) of aluminium and ITO, APC alloy (Ag/Pd/Cu) or APC alloy and ITO's is heavy Product structure (ITO/APC/ITO), or can be formed as silver-colored (Ag), aluminium (A1), molybdenum (Mo), golden (Au), magnesium (Mg), calcium (Ca) or The single layer structure of the alloy of any one material or two or more materials in barium (Ba).
Emitter (ED) is sent out by the luminous of emission layer (EL) according to being provided to the data-signal of first electrode (E1) Penetrate white light.In this case, be arranged emitter (ED) on emitting area (EA) have with bending pattern 180-1 and The corresponding shape of the shape of 180-2.Therefore, on the boundary being incident between first electrode (E1) and bending pattern 180-1 and 180-2 In the case where the light to be less than cirtical angle of total reflection incidence in white light on face, completely extracted towards substrate 100.Together When, in the case where incident light is greater than the cirtical angle of total reflection, travel path passes through the protrusion of bending pattern 180-1 and 180-2 Part 181 and 185 and concave portion 183 and 187 change, and thus extract light towards substrate 100.It is thus possible to improve each picture Light extraction efficiency in element.
It can also include dike layer 190 and encapsulated layer 200 according to the luminous display unit of the disclosure.
Dike layer 190 is configured to limit each subregion being arranged in first area (A1) and second area (A2) The emitting area (EA) of (SA1, SA2, SA3 and SA4).The covering of dike layer 190 planarizes coating 170 and is arranged in each subregion The edge of the first electrode (E1) on circuit region (CA) in (SA1, SA2, SA3 and SA4) other than emitting area (EA). Dike layer 190 can be formed by organic material such as benzocyclobutane vinyl resin, acrylic resin or polyimide based resin.Dike Layer 190 can be by including that the light-sensitive material of black pigment is formed.In this case, dike layer 190 is used as light obstructing member.
Each of the second electrode (E2) of emitter (ED) and emission layer (EL) are formed on dike layer 190.That is, transmitting Layer (EL) is formed in being provided in the whole region of first electrode (E1) and dike layer 190 of substrate 100, and second electrode (E2) It is configured to covering emission layer (EL).
Encapsulated layer 200 is formed on the substrate 100 to cover second electrode (E2), i.e., entire pixel.Encapsulated layer 200 is protected thin Film transistor and emitter (ED) prevent moisture penetration into luminous display unit from external impact, and also.
Selectively, encapsulated layer 200 can be formed by packing material for around entire pixel.In this case, root Luminous display unit according to the disclosure can also include the package substrate 300 that substrate 100 is attached to by using packing material.Envelope Dress substrate 300 can be formed by metal material.
In addition, can also include rear surface (or the light extraction for being attached to substrate 100 according to the luminous display unit of the disclosure Surface) polarizing coating.Polarizing coating changes into the exterior light reflected by arrangement thin film transistor (TFT) within the pixel and/or line Circular polarization state, to improve the visuality and contrast of luminous display unit.
Luminous display unit according to the disclosure includes the emitter region being arranged in each pixel 12a, 12b, 12c and 12d Bending pattern 180-1 and 180-2 in the overlapping planarization coating 170 in domain (EA), so that the light emitted by emitter (ED) Travel path by bending pattern 180-1 and 180-2 change, to improve the light extraction of each pixel 12a, 12b, 12c and 12d Efficiency, and furthermore realize improved brightness and reduce power consumption.In addition, including being arranged according to the luminous display unit of the disclosure Bending pattern 180-1 in the planarization coating 170 overlapping with the emitting area (EA) of each pixel 12a, 12b, 12c and 12d And 180-2, wherein bending pattern 180-1 and 180-2 include have same shape or with 0.4 to 0.6 aspect ratio it is multiple Part 181 and 185 is protruded, so that the light extraction efficiency of each pixel 12a, 12b, 12c and 12d be made to maximize.
Fig. 5 is the enlarged drawing for showing part " A " shown in Fig. 3, and it illustrates hairs according to one aspect of the disclosure The cross section structure of injection device and the first bending pattern.Fig. 6 is to show putting down for the planar structure of the first bending pattern shown in Fig. 3 Face figure.
Referring to figure 5 and figure 6 in conjunction with Fig. 3, the first bending pattern 180-1 according to one aspect of the disclosure includes multiple One protrusion part 181 and multiple first concave portions 183.
Each of multiple first protrusions part 181 can be formed as convex shape on color-filter layer 150.Therefore, more A first protrusion part 181 can have the cross section structure of convex lens or microlens shape.Multiple first protrusions part 181 changes The travel path of the incident light of substrate 100 is emitted to from emitter (ED), to improve the light extraction efficiency of pixel.
Multiple first protrusions part 181 can be arranged to hexagon belt type in the plane.In the disclosure, multiple first Protrusion part 181 can be arranged to various shape in the plane, for example, annulus shape, oval belt shape or polygonal band shape.
Each of multiple first protrusions part 181 has the cross-sectional area for being parallel to color-filter layer 150.Pass through change The travel path of incident light, cross-sectional area in multiple first protrusions each of part 181 is with close to color-filter layer 150 And gradually increase, to improve the light extraction efficiency of pixel.
Each of multiple first protrusions part 181 according to one aspect of the disclosure may include bottom 181a, top Portion 181b and laterally (lateral) portion 181c.
Bottom 181a can be defined as the bottom surface adjacent with color-filter layer 150 of the first protrusion part 181.That is, bottom Portion 181a can be arranged with 0.1 micron to 0.3 micron of front surface of the interval away from color-filter layer 150.That is, bottom 181a It can be the front surface of planarization coating 170 being arranged between the first bending pattern 180-1 and color-filter layer 150.
The diameter (D1 or width) of bottom 181a can be according to the first protrusion part 181 based on the first protrusion part 181 Base diameter and height (H1) aspect ratio be set in the size range bigger than top 181b.
The bottom 181a of the first adjacent protrusion part 181 is connected to each other, and allows to be formed the first concave portion 183, That is, the bottom surface 183a of the first concave portion 183.In this case, the spacing between the first adjacent protrusion part 181 (P1) it can be set as identical as the diameter of bottom 181a (D1 or width).
Top 181b is arranged away from bottom 181a predetermined height.Top 181b can be defined as the first protrusion part 181 vertex with convex shape.In this case, the front surface in planarization coating 170 can be set in top 181b In 170a or below the front surface 170a of planarization coating 170.
Transverse part 181c is disposed between bottom 181a and top 181b.
Transverse part 181c according to one aspect of the disclosure can be arranged with curve shape at bottom 181a and top Between 181b, the light extraction efficiency of pixel is improved will pass through the travel path of change incident light.In this case, laterally Portion 181c can have the curve shape including inflection point (IP), so that the light extraction efficiency of pixel maximizes.In this case, Transverse part 181c according to the disclosure may include the inflection portions (IPP) with inflection point (IP), be arranged in inflection portions (IPP) The first curved portion (CP1) between the 181a of bottom and be arranged between inflection portions (IPP) and top 181b second Curved portion (CP2).
Inflection portions (IPP) include be arranged in sunk surface between inflection point (IP) and the first curved portion (CP1) and The protrusion surface being arranged between inflection point (IP) and the second curved portion (CP2).Therefore, it is incident on the light of inflection portions (IPP) Travel path can be changed by using sunk surface and protrusion surface to various angles, to improve the light extraction of pixel Efficiency.
Concave shape can be set into first curved portion (CP1), is simutaneously arranged in inflection portions (IPP) and bottom 181a Between.Convex shape can be set into second curved portion (CP2), be simutaneously arranged inflection portions (IPP) and top 181b it Between.
Relative to the height (H1) of the first protrusion part 181, the height (h1) of the first curved portion (CP1), inflection portions (IPP) ratio of the height (h3) of height (h2) and the second curved portion (CP2) can be set as 1: 3: 1, but not limited to this. Each of height (h1) and the height (h3) of the second curved portion (CP2) of first curved portion (CP1) can be turned being less than It is same or different to each other in the range of the height (h2) of point part (IPP).In addition, the length relative to transverse part 181c, inflection point Partially the length of curve of (IPP) can be greater than long in each of the first curved portion (CP1) and the second curved portion (CP2) Degree, and each length of the first curved portion (CP1) and the second curved portion (CP2) can be the same or different from each other.At this In the case of kind, the length of the second curved portion (CP2) can be greater than the length of the first curved portion (CP1).First curved portion (CP1), the height in each of inflection portions (IPP) and the second curved portion (CP2) or length of curve can be according to first The aspect ratio setting for protruding part 181, is set to improve light extraction efficiency according to the change of light travel path.
Inflection portions (IPP), the first curved portion (CP1) in transverse part 181c according to one aspect of the disclosure and Second curved portion (CP2) can have symmetrical structure relative to top 181b, so that according to one aspect of the disclosure convex Part 181 can have bell-shaped or Gaussian curve cross-sectional structure out.
Multiple first concave portions 183 arrange the front surface being simutaneously arranged into from planarization coating 170 at regular intervals The concave shape of 170a.That is, can each arrange in the first concave portion 183 in the plane has hexagon band-like In first protrusion part 181.Therefore, the first protrusion part 181 and the first concave portion 183 being arranged on emitting area (EA) It can be in the plane with the honeycomb of hexagonal shape.
Multiple first concave portions 183 are arranged in parallel in a first direction simultaneously at regular intervals, and in second party It sets up as zigzag.That is, multiple first concave portions 183 can be arranged with fixed intervals, while being arranged to lattice Son construction, however, the first adjacent concave portion 183 can be arranged alternately in a second direction in a first direction.Therefore, phase The respective center of three adjacent concave portions 183 can form triangle (TS).
Relative to the front surface 170a of planarization coating 170, multiple first concave portions 183 can have identical depth Degree.However, due to the foozle of Patternized technique, some in multiple first concave portions 183 may have different depths Degree.
Bottom surface (or lowest surface) in each of multiple first concave portions 183 with 150 interval of color-filter layer The mode for opening predetermined space is arranged.That is, being arranged in planarization coating 170 in the first concave portion 183 and color-filter layer In the case where between 150, the bottom surface 183a of the first concave portion 183 faces the front surface 150a of color-filter layer 150.This In the case of, it is arranged in planarization coating 170 between the bottom surface and color-filter layer 150 of the first concave portion 183 and has and be greater than 0.1 micron (μm) of thickness, to prevent some front surfaces of color-filter layer 150 for the technique for forming the first concave portion 183 It is directly exposed to the first concave portion 183.Herein, due to being filtered for the technology arrangement for forming the first concave portion 183 Planarization coating 170 between color device layer 150 and the first concave portion 183 increases on thickness, it is possible to which high efficiency prevents Some front surface 150a of color-filter layer 150 are directly exposed to the first concave portion 183.However, in terms of manufacturing process, it is flat The material cost for changing coating 170 increases, and manufacturing time increases, and the thickness of luminous display unit also increases.Therefore, in order to anti- Only the front surface of color-filter layer 150 be directly exposed to the first concave portion 183 up to the first concave portion 183 depth, and also So that planarizing the increase of thickness in the increase of material cost, the increase of manufacturing time and luminous display unit in coating 170 It minimizes, by the maximum for the planarization coating 170 being arranged between color-filter layer 150 and the bottom surface of the first concave portion 183 Thickness is set as less than 3 microns (μm).Therefore, between the front surface 150a of color-filter layer 150 and multiple first concave portions 183 Minimum range can be 0.1 micron (μm), and the front surface 150a of color-filter layer 150 and multiple first concave portions 183 Between maximum distance can be 3 microns (μm).
If the minimum range between color-filter layer 150 and the first concave portion 183 is less than 0.1 micron (μm), colour filter The some of the front surface of device layer 150 may be removed and be recessed with the Patternized technique for planarizing coating 170 to form The some of the front surface of one bending pattern 180-1 or color-filter layer 150 may be directly exposed to the first concave portion 183.Such as Fruit color-filter layer 150 is exposed to the first concave portion 183 and the coating 170 that is not flattened covers, then may be in color-filter layer Dim spot is generated in 150 sunk area.Therefore, moisture may expand due to the moisture that is generated by the degasification of colour filter 150 It is scattered to emitter (ED), to deteriorate the characteristic of emitter (ED) and reliability and the service life of emitter (ED).Separately Outside, the first electrode (E1) of emitter (ED) is directly contacted with color-filter layer 150, and thus first electrode (E1) deteriorates, and Color-filter layer 150 due to first electrode (E1) deterioration and damage.If color-filter layer 150 is exposed to the first concave portion 183 And the covering of coating 170 that is not flattened, then the reliability and service life of the characteristic of emitter (ED) and emitter (ED) can It can deterioration.In order to overcome these problems, color-filter layer 150 front surface 150a with it is every in multiple first concave portions 183 The thickness (T1) for the planarization coating 170 arranged between a bottom surface 183a is set at 0.1 micron to 3 microns (μm) of model In enclosing.
Emitter (ED) according to one aspect of the disclosure includes being sequentially deposited on the first bending pattern 180-1 First electrode (E1), emission layer (EL) and second electrode (E2).Emitter (ED) can have and be arranged in the first bending The corresponding shape of shape of the first protrusion part 181 and the first concave portion 183 in pattern 180-1.Therefore, from emitter (ED) travel path of the light emitted is changed by using the first bending pattern 180-1 to substrate 100, thus improves light extraction effect Rate.
It can be according to it in the first protrusion part 181 and the first concave portion according to the thickness of the emitter (ED) of the disclosure Position in points 183 and change.Specifically, for the technique by deposition method formation emitter (ED), there will be straight line The deposition materials for emitter (ED) of property are deposited on the first bending pattern 180-1 rather than flat surfaces.Therefore, Emitter (ED) can be in the top 181b, inflection portions (IPP) and the first concave portion 183 of the first protrusion part 181 With different thickness (t1, t2, t3).That is, the top 181b and the first concave portion 183 of the first protrusion part 181 Each of bottom surface 183a can have big curvature relative to the inflection portions (IPP) of the first protrusion part 181, or There can be small gradient relative to the bottom surface 181a of the first protrusion part 181.Therefore, emitter (ED) can be There is first thickness (t1) on the bottom surface 183a of one concave portion 183, it can be on the top 181b of the first protrusion part 181 For second thickness (t2), wherein second thickness (t2) can be identical or different with first thickness (t1), and can be convex first There is third thickness (t3) on the inflection portions (IPP) of part 181 out, wherein third thickness (t3) can be less than first thickness (t1) and each of second thickness (t2).
If the emission layer (EL) of emitter (ED) is formed by organic luminous layer, luminous usually the existing of emission layer (EL) It is generated in region with high current density.According to emitter (ED) of the disclosure, with relatively small Third thickness (t3) the first protrusion part 181 inflection portions (IPP) on emission layer (EL) in generate relatively strong master Transmitting, on the bottom surface 183a of the first concave portion 183 with the first thickness (t1) more relatively large than third thickness (t3) Emission layer (EL) in generate the first son transmitting weaker than main transmitting, and have more relatively large than third thickness (t3) second The second son hair weaker than main transmitting is generated in emission layer (EL) on the top 181b of first protrusion part 181 of thickness (t2) It penetrates.According to the shape of the first bending pattern 180-1, main emitting area can be defined as main light extraction area, and son hair Penetrating region can be defined as sub- light extraction area.Therefore, in the case where the brightness on the first bending pattern 180-1, with Brightness is relatively high in the overlapping region of inflection portions (IPP) of first protrusion part 181, and with the first concave portion 183 Brightness is relatively low in bottom surface 183a overlapping region.
In view of the thickness of the emitter (ED) formed according to the shape of the first bending pattern 180-1, the first protrusion 181 top 181b is divided to correspond to the sub- emitting area with high extracting efficiency and low current density.First concave portion 183 Bottom surface 183a corresponds to the sub- emitting area with minimum light extraction efficiency and minimum current density.Meanwhile first protrusion 181 inflection portions (IPP) are divided to correspond to the main emitting area with highlight extract efficiency and high current density.Therefore, relatively In the emission measure of the emitter (ED) of each unit area, the inflection portions (IPP) of the first protrusion part 181 have maximum Emission measure, the bottom surface 183a of the first concave portion 183 have the smallest emission measure, and the top of the first protrusion part 181 Emission measure on 181b can be identical as the emission measure on the bottom surface 183a of the first concave portion 183 or bigger.Therefore, exist First protrusion part 181 transverse part 181c in the case where, can according to the increase for occupying percentage of inflection portions (IPP) come Increase light extraction efficiency, and power consumption can be reduced according to the reduction for occupying percentage of the first curved portion (CP1).Relative to The height (H1) of first protrusion part 181, height (h1), the height (h2) of inflection portions (IPP) of the first curved portion (CP1) It can be set as 1: 3: 1 with the ratio of the height (h3) of the second curved portion (CP2), thus improve light extraction efficiency.
The first bending pattern 180-1 according to one aspect of the disclosure can be manufactured by photoetching process.For example, being formed The technique of first bending pattern 180-1 may comprise steps of: photoresist is coated to planarization with constant thickness On coating 170；The curve shape in planarization coating 170 is patterned by photoetching；And form the first bending pattern 180-1, with multiple first protrusion parts 181 and multiple first concave portions 183.According to the first bending pattern 180-1, use In the exposed mask of photoetching process include multiple light transmissive portions and multiple photoresist parts.In this case, it is based on colour filter Thickness, light exposure, the diameter of the first protrusion part 181 and the first protrusion part of planarization coating 170 on device layer 150 Spacing between 181 sets the shape in each of multiple light transmissive portions in the model that can prevent the exposure of color-filter layer 150 In enclosing.
The first bending pattern 180-1 according to another aspect of the present disclosure can by photoetching process and heat treatment process come Manufacture.For example, forming the technique of the first bending pattern 180-1 may comprise steps of: by photoresist with constant thickness Degree is coated on planarization coating 170；The curve shape in planarization coating 170 is patterned by photoetching；Form the One bending pattern 180-1, with multiple first protrusion parts 181 and multiple first concave portions 183；And pass through heat treatment Technique realizes the optimum shape of the first protrusion part 181.In this case, heat treatment process by least two steps without It is a step to carry out.For example, heat treatment process may include using the first heat treatment temperature the first heat treatment process and Use the second heat treatment process of second heat treatment temperature more relatively higher than the first heat treatment temperature.Herein, first is convex The shape of part 181 can be determined by controlling process time and the first heat treatment temperature of the first heat treatment process out.
It may be by based on the straight of the first protrusion part 181 according to the light extraction efficiency of the shape of the first bending pattern 180-1 The aspect ratio of first protrusion part 181 of diameter (D1) and height (H1) influences.Herein, first protrudes part 181 in length and breadth It can be defined as than (H/ (D/2)) through the radius (D1/ by the height (H1) of the first protrusion part 181 divided by bottom 181a 2) value obtained.It can have 0.4 to 0.6 according to the first of the first bending pattern 180-1 of the disclosure the protrusion part 181 Aspect ratio.
If the aspect ratio of the first protrusion part 181 is in the range of 0.4 to 0.6, in length and breadth with the first protrusion part 181 The case where than less than 0.4 or greater than 0.6, is compared, and light extraction efficiency can be improved.That is, if the first protrusion part 181 aspect ratio is less than 0.4, then the height (H1) of the first protrusion part 181 becomes too low, so that emitting from emitter (ED) Light advance not towards substrate 100, that is, it is internal that light is trapped in emitter (ED), to reduce light extraction efficiency.Together When, if the aspect ratio of the first protrusion part 181 is greater than 0.6, the height (H1) of the first protrusion part 181 becomes too high, makes It obtains light reflectivity to increase, thus reduces light extraction efficiency.Particularly, if the aspect ratio of the first protrusion part 181 is greater than 0.6, then it shows to reduce the trend that current efficiency rises.However, if the aspect ratio of the first protrusion part 181 is 0.4 to 0.6 In the range of, then it has maximum value in the rising of the current efficiency of emitter (ED).First protrusion part 181 is in length and breadth Than may be in the range of 0.4 to 0.6, so that the light extraction efficiency of pixel maximizes.
If the aspect ratio of the first protrusion part 181 is in the range of 0.4 to 0.6, based on curved for patterning first The resolution ratio of the mask of diagram case 180-1, the diameter (D1) of bottom 181a can be set as 4 microns to 12 microns (μm), and The height (H1) of bottom 181a can be set as 0.8 micron to 3.6 microns (μm).In this case, straight as bottom 181a Diameter (D1) can be set to 4 microns (μm), and the height (H1) of the first protrusion part 181 can be set to 0.8 micron When (μm), the aspect ratio of the first protrusion part 181 can be 0.4.In addition, the diameter (D1) as bottom 181a can be set as 12 μm, and the height (H1) of the first protrusion part 181, when can be set as 3.6 microns (μm), the first protrusion part 181 is in length and breadth Than can be 0.6.
If the height (H1) of the first protrusion part 181 is less than 0.8 micron (μm), the height of the first protrusion part 181 Become too low, so that aspect ratio reduces.Therefore, the first bending pattern 180-1 is flattened, so that emitting from emitter (ED) Light be trapped in emitter (ED), thus reduce the light quantity extracted towards substrate 100.If the first protrusion part 181 Height (H1) be greater than 3.6 microns (μm), then first protrusion part 181 height become too high so that aspect ratio increase, thus The raising of current efficiency is reduced, and increases reflectivity.
If the diameter (D1) of the bottom 181a of the first protrusion part 181 is difficult to control patterning less than 4 microns (μm) Technique.If the diameter (D1) of the bottom 181a of the first protrusion part 181 is greater than 12 microns (μm), lead to the first protrusion part Optimum height (H1) in 181 is more than 3.6 microns (μm), to reduce productivity.
In addition, the emitter (ED) being deposited in the first protrusion part 181 can have most at its maximum inclination Big emission measure.Therefore, if emitter (ED) in transverse part 181c or is turned relative to the bottom 181a of the first protrusion part 181 There is maximum inclination, then the light emitted from emitter (ED) can be to be less than the cirtical angle of total reflection at point part (IPP) Angle is advanced, and improves external emission efficiency from there through multipath reflection, to realize maximum external light extraction efficiency.
The transverse part 181c of first protrusion part 181 or gradient at inflection portions (IPP) can by with the first protrusion Half high aspect ratio (H1/F) of part 181 is determined with aspect ratio.Herein, half high aspect ratio (H1/F) indicates the first protrusion The ratio between the height (H1) of part 181 and halfwidth degree (F), wherein halfwidth degree (F) indicates width in the half of height (H1) (H1/2) width at.
If the aspect ratio of the first protrusion part 181, in the range of 0.4 to 0.6, the half of the first protrusion part 181 is high Aspect ratio (H1/F) can be in the range of 0.45 to 0.7.Herein, if half high aspect ratio of the first protrusion part 181 (H1/F) less than 0.45, then the height (H1) of the first protrusion part becomes too low, so that the light emitted from emitter (ED) is not It advances towards substrate 100, that is, light is trapped in emitter (ED) inside, to reduce light extraction efficiency.Meanwhile if Half high aspect ratio (H1/F) of first protrusion part 181 is greater than 0.7, then the height (H1) of the first protrusion part 181 becomes too high, So that light reflectivity increases, light extraction efficiency is thus reduced.
In the first bending pattern 180-1 according to the disclosure, the first protrusion part 181 has 0.4 to 0.6 in length and breadth Than, allow to improve light extraction efficiency into third pixel in the first pixel, and the first protrusion part 181 have 0.45 to 0.7 half high aspect ratio (H1/F), so as to so that the light extraction efficiency of the first pixel to third pixel maximizes.
Fig. 7 is the enlarged drawing for showing part " B " shown in Fig. 4, and it illustrates according to one aspect of the disclosure The cross section structure of two bending patterns and emitter.
In conjunction with Fig. 4 referring to Fig. 7, the second bending pattern 180-2 according to one aspect of the disclosure is flat including being arranged in Change multiple second protrusion parts 185 and multiple second concave portions 187 on the front surface 170a of coating 170, planarizes coating 170 are arranged on insulating layer 130.
Each of multiple second protrusions part 185 can be formed as convex shape on insulating layer 130.Therefore, multiple Second protrusion part 185 can have the cross section structure of convex lens or microlens shape.
Each of multiple second protrusions part 185 has 0.4 to 0.6 aspect ratio (H2/ (D2/2)), so that the 4th picture The light extraction efficiency of element is identical as light extraction efficiency in each of the first pixel to third pixel.To protrude part with first 181 identical modes, each of multiple second protrusions part 185 include bottom 181a, top 181b and transverse part 181c, by This is by omission to the detailed description of same parts.Multiple second protrusions part 185, which changes from emitter (ED), is emitted to substrate The travel path of 100 incident light, to improve the light extraction efficiency of the 4th pixel.
Multiple second concave portions 187 arrange the front surface being simutaneously arranged into from planarization coating 170 at regular intervals The concave shape of 170a.In addition to bottom surface 187a in each of multiple second concave portions 187 is arranged to and insulating layer 130 It is spaced apart except predetermined space, multiple second concave portions 187 are identical as multiple first concave portions 183 in shape, will save Slightly to the detailed description of multiple second concave portions 187.
In the second bending pattern 180-2 according to the disclosure, the second protrusion part 185 has 0.4 to 0.6 in length and breadth Than, allow to improve light extraction efficiency in the 4th pixel, and the second protrusion part 185 with 0.45 to 0.7 it is half high Aspect ratio (H2/F), the light extraction efficiency for allowing to the 4th pixel maximize.
Finally, being arranged in the first pixel into third pixel according to the luminous display unit of the disclosure The first bending pattern in each emitting area and the second bending pattern packet being arranged in the emitting area of the 4th pixel The protrusion part for including the aspect ratio with 0.4 to 0.6, allows to improve the light extraction in each pixel of component unit pixel Efficiency, and furthermore, it is possible to maximize the light extraction efficiency in each pixel of component unit pixel.
Fig. 8 A to Fig. 8 C is shown for forming the first bending pattern and in the luminous display unit according to the disclosure The mask arrangement of two bending patterns.
Firstly, being used to form the first exposure of the first bending pattern 180-1 and the second bending pattern 180-2 referring to Fig. 8 A Mask 500 includes: multiple first transmittance sections 510, for transmit incident light by planarization coating 170 first area 170b with It is provided with the first bending pattern 180-1；Multiple first light shielding parts being arranged between each of multiple first transmittance sections 510 512；Multiple second transmittance sections 530, for transmiting incident light by the second area 170c of planarization coating 170 to be provided with the Two bending pattern 180-2；And multiple second light shielding parts 532 between each of being arranged in multiple second transmittance sections 530.
In the first exposed mask 500, the distance between adjacent central point of the first transmittance section 510 corresponding first The spacing (P1) of transmittance section 510 and with corresponding second transmittance section of the distance between the adjacent central point of the second transmittance section 530 530 spacing (P1) is identical, and the width (W1 or diameter) and multiple second in each of multiple first transmittance sections 510 Each width (W1 or diameter) is identical in transmittance section 530.In addition, width each in multiple first light shielding parts 512 (G1, or Gap) it is identical as width (G1 or gap) each in multiple second light shielding parts 532.First transmittance section 510 and the second transmittance section The width (G1) of 530 spacing (P1) and width (W1) and the first light shielding part 512 and the second light shielding part 532 may be set in energy It is enough that the bottom surface of the concave portion 183 of first bending pattern is spaced apart in 1500.1 microns away from color-filter layer to 3 microns (μ M) it is provided at distance in the range of planarization coating 170.
According to the photoetching process for using the first exposed mask 500 is executed, there are multiple protrusion parts and multiple concave portions The first bending pattern 180-1 and the second bending pattern 180-2 be respectively formed at planarization coating 170 first area 170b and In second area 170c.
However, for the exposure technology of photoetching process, the second protrusion 185 shape of part of the second bending pattern 180-2 At in the second area 170c of the planarization coating 170 relatively thick since there is no color-filter layer 150, thus second is curved Height (H0) in the second protrusion part 185 of diagram case 180-2 is relatively lower than the first protrusion of the first bending pattern 180-1 Divide the height (H1) in 181.That is, second area 170c, which is formed in, to be not provided in the case where planarizing coating 170 On the insulating layer 130 of color-filter layer 150, thus the thickness (T4) of second area 170c is relatively larger than being formed in color-filter layer 150 On first area 170b thickness (T3).Therefore, dispersed for the light for being irradiated to second area 170c of exposure technology, made Height of the height (H0) lower than the first protrusion part 181 of the second protrusion part 185 in second area 170c must be formed in (H1).Therefore, because height (H0) is low, the second protrusion part 185 can have the aspect ratio less than 0.4.If by using First exposed mask 500 planarization coating 170 on form the first bending pattern 180-1 and the second bending pattern 180-2, then by Difference in height between the protrusion part 181 of the first bending pattern 180-1 and the protrusion part 185 of the second bending pattern 180-2 (H1, H0) and cause the light extraction efficiency in the 4th pixel to be relatively lower than light extraction efficiency of first pixel into third pixel.
Next, in a manner of identical with the first exposed mask 500, being used to form the first bending pattern referring to Fig. 8 B The second exposed mask 600 of 180-1 and the second bending pattern 180-2 may include the first transmittance section 610, the first light shielding part 612, Second transmittance section 630 and the second light shielding part 632.However, the first transmittance section 610 and the second transmittance section 630 are with different from each other Spacing (P1, P2).
The second spacing in the second exposed mask 600 according to one aspect of the disclosure, in the second transmittance section 630 (P2) the first spacing (P1) being greater than in the first transmittance section 610.For this purpose, the second width (W2, or straight in the second transmittance section 630 Diameter) be greater than the first transmittance section 610 in the first width (W1 or diameter), and the second light shielding part 632 the second width (G2, or Gap) it is identical as the first width (G1 or gap) in the first light shielding part 612.That is, with the first exposed mask 500 It compares, the second width (W2 or diameter) of the second transmittance section 630 in the second exposed mask 600 increases, so that the second exposure is covered The second spacing (P2) of the second transmittance section 630 in mould 600 can increase.The second width (W2, or straight of second transmittance section 630 Diameter) it is set at can obtain in the first protrusion part 181 and the second area 170c for being formed in planarization coating 170 the In two protrusion 185 the two of part in the range of identical aspect ratio and identical half high aspect ratio.That is, the second transmittance section 630 the second width (W2 or diameter), which is set at, can make aspect ratio 0.4 to 0.6 in the second protrusion part 185 and make Second protrusion part 185 in half high aspect ratio be 0.45 to 0.7 in the range of.
In the case where the second exposed mask 600 according to another aspect of the present disclosure, as shown in Figure 8 C, by increasing by the The second width (G2 or gap) of two light shielding parts 632 rather than the second width (W2 or diameter) of the second transmittance section 630 make The second spacing (P2) of second transmittance section 630 can be greater than the first spacing (P1) of the first transmittance section 610.That is, second The second width (G2 or gap) of light shielding part 632 is greater than the first width (G1 or gap) of the first light shielding part 612, the second light transmission Second width (W1 or diameter) in portion 630 and the first width (W1 or diameter) of the first transmittance section 610 are identical.That is, Compared with the first exposed mask 500, the second width (G2 or diameter) of the second light shielding part 632 in the second exposed mask 600 increases Add, so that the second spacing (P2) of the second transmittance section 630 in the second exposed mask 600 can increase.Second light shielding part 632 Second width (G2 or diameter), which is set at, can obtain in the first protrusion part 181 and be formed in the of planarization coating 170 In the second protrusion part 185 in two region 170c in the range of identical aspect ratio and identical half high aspect ratio.Namely It says, the second width (G2 or diameter) of the second light shielding part 632, which is set at, can make aspect ratio in the second protrusion part 185 0.4 to 0.6 and in the range of making in the second protrusion part 185 half high aspect ratio be 0.45 to 0.7.
In the second exposed mask 600, the second spacing (P2) of the second transmittance section 630 is greater than the of the first transmittance section 610 One spacing (P1) allows the aspect ratio of the second protrusion part 185 identical as the first protrusion aspect ratio of part 181, and In addition, half high aspect ratio of the second protrusion part 185 can be identical as the first protrusion half high aspect ratio of part 181.
If forming the first bending pattern 180-1 and the on planarization coating 170 by using the second exposed mask 600 Two bending pattern 180-2, then the first bending pattern 180-1 protrusion part 181 and the second bending pattern 180-2 protrusion part 185 can have 0.4 to 0.6 aspect ratio, and can have 0.45 to 0.7 half high aspect ratio, allow to make first Pixel is consistent with the light extraction efficiency in the 4th pixel to third pixel.
Fig. 9 be show the first pixel shown in Fig. 1 to third pixel structure sectional view.Figure 10 is shown in Fig. 1 Shown in the 4th pixel structure cross-sectional view, by additionally providing Fig. 1 to luminous display unit shown in fig. 7 Barrier layer and obtain.Hereinafter, the detailed description of the same parts by omission in addition to barrier layer and dependency structure.
Referring to Fig. 9 and Figure 10, the arrangement of barrier layer 160 according to one aspect of the disclosure is on the substrate 100 to cover filter Color device layer 150 and insulating layer 130.That is, barrier layer 160 is disposed between planarization coating 170 and color-filter layer 150 And between planarization coating 170 and insulating layer 130.For forming the emitter region with each pixel in planarization coating 170 The technique of domain (EA) the first overlapping bending pattern 180-1 and the second bending pattern 180-2, barrier layer 160 are used as etch stop Layer, allows to prevent that color-filter layer 150 is directly exposed to the first concave portion 183, thus fundamentally prevents due to colour filter Problem caused by the exposure of device layer 150.
Barrier layer 160 according to one aspect of the disclosure can have 0.1 micron to 3 microns (μm) of thickness.At this Wen Zhong, if the particle that the thickness on barrier layer 160 less than 0.1 micron (μm), includes in color-filter layer 150 passes through barrier layer 160, thus emitter (ED) may be colored the particle damage of device layer 150.In addition, increased according to the thickness on barrier layer 160, It is beneficial to prevent the exposure of color-filter layer 150.However, the material cost on barrier layer 160 increases, manufacture in terms of manufacturing process Time increases, and the thickness of luminous display unit also increases.For this reason, the thickness on barrier layer 160 can be micro- less than 3 Rice (μm).For example, barrier layer 160 can be with shape if the particle of color-filter layer 150 has the size less than 0.1 micron (μm) As at least 0.1 micron (μm) of thickness.
Barrier layer 160 according to one aspect of the disclosure can be by that will not be used to pattern planarization coating 170 The material of developing material (or etching material) removal of technique is formed.
It barrier layer 160 according to another aspect of the disclosure can be by such as Si oxide (SiOx) or silicon nitride (SiNx) inorganic material formed.That is, barrier layer 160 can be formed by material identical with the material of insulating layer 130. For example, barrier layer 160 and insulating layer 130 can be by SiO2It is formed.
After forming the first bending pattern 180-1 and the second bending pattern 180-2, it can execute and be used to form contact hole (CH) with the technique of some source electrode 119s of exposure driving thin film transistor (TFT) (DT).If barrier layer 160 and insulating layer 130 by Identical material is formed, it is contemplated that is used to form the technique of contact hole (CH), contact hole (CH) can pass through a pattern chemical industry Skill is formed simultaneously in barrier layer 160 and insulating layer 130.In order to simplify the manufacturing process of luminous display unit, 160 He of barrier layer Insulating layer 130 may be formed from the same material.
Luminous display unit according to one aspect of the disclosure facilitates the light for each pixel for making component unit pixel Extraction efficiency maximizes, to pass through the blocking for the etching stopping layer being used as between the first bending pattern 180-1 and color-filter layer 150 Layer 160 prevents color-filter layer 150 to be directly exposed to the first concave portion 183, and prevents the exposure due to color-filter layer 150 Caused by emitter (ED) characteristic deterioration.
According to the disclosure, the light extraction efficiency for the pixel being arranged in luminous display unit can be improved, so as to so that Light extraction efficiency in each pixel maximizes.
It will be apparent to those skilled in the art that without departing from the spirit or the scope of the present disclosure, Ke Yi It carry out various modifications and changes in the disclosure.Therefore, the appended right that falls into that the disclosure is intended to cover the provided disclosure is wanted Seek the modifications and variations in the range of book and its equivalent program.

Claims (17)

1. a kind of luminous display unit, comprising:
Substrate with first area and second area；
Coating is planarized, arrangement is on the substrate and in the first bending pattern of the first area and described Second bending pattern of second area；And
The emitter being arranged on first bending pattern and second bending pattern,
Wherein, the thickness of the overlapping planarization coating vertical with first bending pattern and with second bending pattern Vertically the thickness of the overlapping planarization coating is different, and
Each of first bending pattern and second bending pattern include with vertical in the range of 0.4 to 0.6 Multiple protrusion parts of horizontal ratio.
2. luminous display unit according to claim 1, further includes:
Red pixel, green pixel and blue pixel in the first area；And
In the white pixel of the second area.
3. luminous display unit according to claim 2, wherein the multiple protrusion part has 0.45 to 0.7 Half high aspect ratio in range.
4. luminous display unit according to claim 2, wherein the multiple protrusion part has micro- at 4 microns to 12 Spacing in the range of rice (μm) and height in the range of 0.8 micron to 3.6 microns (μm).
5. luminous display unit according to claim 2, wherein the multiple protrusion, which divides, includes:
The bottom adjacent with the substrate；
Top from the bottom predetermined height is set；And
Transverse part between the bottom and the top is set.
6. luminous display unit according to claim 5, wherein the transverse part has the curve shape including inflection point.
7. luminous display unit according to claim 5, wherein first bending pattern and second bending pattern It further include multiple concave portions,
Wherein, the bottom of the multiple protrusion part is connected to each other, and each of the multiple concave portion is by described more A protrusion part surrounds.
8. luminous display unit according to claim 6, wherein the emitter includes being sequentially deposited described the First electrode, emission layer and second electrode on one bending pattern and second bending pattern, and
Each of the first electrode, the emission layer and described second electrode have and first bending pattern and described The shape that profile in each of second bending pattern matches.
9. luminous display unit according to claim 8, wherein the transverse part includes:
Inflection portions including the inflection point；
The first curved portion between the inflection portions and the bottom；And
The second curved portion between the inflection portions and the top,
Wherein, it is less than for covering the thickness of the emitter of the inflection portions for covering first curved portion With the thickness of the emitter in each of second curved portion.
10. luminous display unit according to claim 9, wherein relative to it is described protrusion part height, described first The ratio of the height of the height of curved portion, the height of the inflection portions and second curved portion is 1:3:1.
It further include being arranged in the substrate and described 11. the luminous display unit according to any one of claim 2 to 10 Color-filter layer between first bending pattern,
Wherein, the first area includes the red sub-area with the red pixel, the green with the green pixel Subregion and blue subregion with the blue pixel, and
The color-filter layer includes the red color filter for being arranged in the red sub-area, is arranged in the green of the green sub-area Color colour filter and the blue color filter for being arranged in the blue subregion.
12. luminous display unit according to claim 11, wherein be arranged in first bending pattern bottom surface and The thickness of the planarization coating between the color-filter layer is less than the bottom surface for being arranged in second bending pattern The thickness of the planarization coating between the substrate.
13. luminous display unit according to claim 11, wherein first bending pattern and the color-filter layer it Between minimum range in the range of 0.1 micron to 3 microns (μm).
14. luminous display unit according to claim 11 further includes barrier layer on the substrate,
Wherein, the barrier layer be disposed between the first bending pattern and the color-filter layer described in the first area with And between the second bending pattern and the substrate described in the second area.
15. luminous display unit according to claim 14, wherein the barrier layer has in 0.1 micron to 3 microns (μ M) thickness in the range of.
16. luminous display unit according to claim 14, further includes:
It is arranged in the tft layer of the first area and the second area；With
Insulating layer, arrangement on the substrate and cover the tft layer and support the color-filter layer,
Wherein, the barrier layer covers the color-filter layer and the insulating layer.
17. luminous display unit according to claim 16, wherein the barrier layer is by the material phase with the insulating layer Same material is formed.
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