CN109216538A - The production method of MRAM and its - Google Patents
The production method of MRAM and its Download PDFInfo
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- CN109216538A CN109216538A CN201710526108.8A CN201710526108A CN109216538A CN 109216538 A CN109216538 A CN 109216538A CN 201710526108 A CN201710526108 A CN 201710526108A CN 109216538 A CN109216538 A CN 109216538A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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Abstract
This application provides the production methods of a kind of MRAM and its.The production method includes: step S1, and metal carbonyl conducting layer is arranged on a surface of the substrate；Dielectric layer is arranged on the surface of the separate substrate of metal carbonyl conducting layer in step S3；Step S4 forms the through-hole at multiple intervals using dual damascene process, and through-hole includes first part and second part, and the depth of second part is less than the depth of first part, and the width of second part is greater than the width of first part；Step S5 fills hearth electrode material in each through-hole, forms hearth electrode, in the same plane, hearth electrode material is the conductive material of non-copper on the surface of the separate substrate on the surface and dielectric layer of the separate substrate of hearth electrode.This method avoid first copper is filled in through-holes, then the two-step process of hearth electrode is set on copper again, and due to being not provided with Cu, avoiding leads to the problem of cannot forming smoother surface since the hardness of Cu is lower.
Description
Technical field
This application involves semiconductor memory fields, in particular to the production method of a kind of MRAM and its.
Background technique
Magnetic RAM (Magnetic Random Access Memory, MRAM) is a kind of novel non-volatile
Property memory, compared to current other kinds of memory, have read or write speed is fast, can be achieved infinitely it is erasable, be easy to and mesh
The advantages that preceding semiconductor technology is mutually compatible with, the spin transport torque (Spin of Magnetic moment reversal is realized also with spin current
Transfer torque, STT) MRAM can realize the miniature of memory cell size.These advantages make MRAM become following new
The main direction of development of type memory.
Main functional units in a mram are MTJ cell, and structure mainly includes free magnetic layer/non magnetic oxide layer
(MgO)/pinned magnetic layer.Under the driving such as externally-applied magnetic field or electric current, the magnetic moment direction of free magnetic layer is flipped, with magnetism
Parallel state or anti-parallel state is presented in the magnetic moment direction of pinning layer, so that high low resistance state occurs in MRAM, can be respectively defined as storing
State " 0 " and " 1 ", to realize the storage of information.
In the preparation process of MRAM, Main functional units MTJ cell shares more than ten to twenties layers of different magnetism
Or nonmagnetic film composition, wherein the thickness requirement of plural layers is less than even several angstroms of 1nm.It is ultra-thin in MTJ in order to guarantee
The continuity of film growth, the planarization process of hearth electrode just become particularly important.In current semiconductor technology processing procedure,
Since copper is difficult to etch and be easy to aoxidize in oxidation processes, Damascus technics is often used to form copper product
Interconnection interconnected grooves and through-hole are formed according to Damascus technics in a insulating layer, copper is filled up into the groove of interconnection and logical
Hole, so that groove forms interconnection and through-hole is connected to lower interconnection or substrate, using the technique of chemically mechanical polishing to above-mentioned
Structure is planarized.As shown in Figure 1, generally by being filled with the through-hole of Ni metal between hearth electrode 6' and metal carbonyl conducting layer 2'
5' is electrically connected.Cu is spread in order to prevent, and barrier layer 3', the rough surface of Cu are also provided on bottom metal conductor layer 2'
It is extremely important that degree obtains good electric conductivity for MRAM.It generally selects and utilizes chemically mechanical polishing (Chemical
Mechanical Polishing, CMP) method reduces the surface roughness of Cu, but since the hardness of Ni metal is lower, utilizes
CMP technique can not obtain the surface Cu smooth enough, this will directly affect the surface of the hearth electrode grown on Cu
Flatness influences the setting of the other structures layer in subsequent MTJ device, or even influences the performance of entire MRAM device.
In addition, needing to remove dielectric using CMP process to obtain the hearth electrode 6' of surface MTJ device smooth enough
Layer 4', so that polishing end point is parked on hearth electrode (such as TaN).The selection of existing lapping liquid than is generally all compared currently on the market
It is low, during the polishing process, great challenge is brought will to be accurately parked on hearth electrode TaN.
Summary of the invention
The main purpose of the application is to provide the production method of a kind of MRAM and its, to solve to obtain in the prior art
The problem of enough to flat hearth electrode.
To achieve the goals above, according to the one aspect of the application, the production method of MRAM a kind of is provided, the production
Method includes: step S1, and metal carbonyl conducting layer is arranged on a surface of the substrate, and above-mentioned metal carbonyl conducting layer includes the metal at multiple intervals
Wire portion；Dielectric layer is arranged on the surface far from above-mentioned substrate of above-mentioned metal carbonyl conducting layer in step S3；Step S4, using double
Damascus technics forms the through-hole at multiple intervals, and above-mentioned through-hole is provided in above-mentioned dielectric layer, above-mentioned through-hole and above-mentioned metal
Wire portion connects correspondingly, and above-mentioned through-hole includes first part and second part, above-mentioned first part close to above-mentioned substrate,
Above-mentioned second part is connected to above-mentioned first part, and the depth of above-mentioned second part is less than the depth of above-mentioned first part, and
The width of above-mentioned second part is greater than the width of above-mentioned first part；Step S5 fills hearth electrode material in each above-mentioned through-hole,
Hearth electrode is formed, the surface of the separate above-mentioned substrate of above-mentioned hearth electrode and the surface far from above-mentioned substrate of above-mentioned dielectric layer are same
In one plane, above-mentioned hearth electrode material is the conductive material of non-copper.
Further, the depth of above-mentioned first part is H, and the width of above-mentioned first part is W, H:W < 1.
Further, between above-mentioned steps S1 and above-mentioned steps S3, above-mentioned production method further include: step S2, upper
It states and barrier layer is set on the surface far from above-mentioned substrate of metal carbonyl conducting layer, above-mentioned through-hole is provided with above-mentioned dielectric layer and above-mentioned resistance
In barrier.
Further, above-mentioned steps S5 includes: step S51, and above-mentioned hearth electrode material is arranged in each above-mentioned through-hole；Step
S52 removes the above-mentioned hearth electrode material outside above-mentioned through-hole using chemical mechanical polishing method, the above-mentioned hearth electrode material in above-mentioned through-hole
Material forms above-mentioned hearth electrode.
Further, above-mentioned steps S52, grinding speed of the above-mentioned lapping liquid to above-mentioned hearth electrode material are implemented using lapping liquid
Degree is V1, and above-mentioned lapping liquid is V2, V1:V2 > 50 to the grinding rate of above-mentioned dielectric layer.
Further, above-mentioned hearth electrode material is TaN.
Further, the material of above-mentioned dielectric layer is selected from low-K material and/or ultra low-K material.
Further, the material of above-mentioned metal carbonyl conducting layer is Cu.
According to the another aspect of the application, a kind of MRAM is provided, which includes: substrate；Metal carbonyl conducting layer, setting exist
On the surface of above-mentioned substrate, above-mentioned metal carbonyl conducting layer includes the plain conductor portion at multiple intervals；Dielectric layer is arranged in above-mentioned metal
On the surface far from above-mentioned substrate of conductor layer, offer the through-hole at multiple intervals in above-mentioned dielectric layer, above-mentioned through-hole with it is above-mentioned
Plain conductor portion connects correspondingly, and above-mentioned through-hole includes first part and second part, and above-mentioned first part is close to above-mentioned
Substrate, above-mentioned second part are connected to above-mentioned first part, and the depth of above-mentioned second part is less than the depth of above-mentioned first part
Degree, and the width of above-mentioned second part is greater than the width of above-mentioned first part；Hearth electrode, including hearth electrode material are arranged each
In above-mentioned through-hole, the surface of the separate above-mentioned substrate of above-mentioned hearth electrode and the surface far from above-mentioned substrate of above-mentioned dielectric layer are same
In one plane, above-mentioned hearth electrode material is the conductive material of non-copper.
Further, the depth of above-mentioned first part is H, and the width of above-mentioned first part is W, H:W < 1.
Further, above-mentioned MRAM further include: barrier layer is arranged between above-mentioned metal carbonyl conducting layer and above-mentioned dielectric layer,
Above-mentioned through-hole is provided in above-mentioned barrier layer and above-mentioned dielectric layer.
Further, above-mentioned hearth electrode material is TaN.
Using the technical solution of the application, the logical of multiple intervals is directly formed in the dielectric layer using dual damascene process
Then hole fills hearth electrode material in each through-hole, and then forms the hearth electrode at multiple intervals, this avoid in the prior art
Elder generation fill copper in through-holes, then the two-step process of hearth electrode is set on copper again, and due to being not provided with Cu, avoid due to
The hardness of Cu is lower and leads to the problem of cannot forming smoother surface.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows the structural schematic diagram in a kind of MRAM manufacturing process in the prior art；
Fig. 2 shows metal carbonyl conducting layer, barrier layer and dielectric layer are arranged on substrate in one of the application embodiment
Structural schematic diagram afterwards；
Fig. 3 shows the structural schematic diagram being arranged after through-hole in dielectric layer and barrier layer；
Fig. 4 shows the partial structural diagram of Fig. 3；
Fig. 5 shows the structural schematic diagram filled after hearth electrode material in through-holes；And
Fig. 6 shows the structural schematic diagram formed after hearth electrode material besides vias.
Wherein, the above drawings include the following reference numerals:
2', metal carbonyl conducting layer；3', barrier layer；4', dielectric layer；5', through-hole；6', hearth electrode；
1, substrate；2, metal carbonyl conducting layer；3, barrier layer；4, dielectric layer；5, through-hole；6, hearth electrode；51, first part；52,
Second part；06, hearth electrode material.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
As background technique is introduced, in the prior art, due to the presence of the filling metal such as copper in through-hole, so that
MRAM can not obtain sufficiently flat surface, and then influence its performance, in order to solve technical problem as above, present applicant proposes
A kind of production method of MRAM and its.
In a kind of typical embodiment of the application, the production method of MRAM a kind of is provided, which includes:
Step S1, as shown in Fig. 2, metal carbonyl conducting layer 2 is arranged on the surface of substrate 1, above-mentioned metal carbonyl conducting layer 2 includes multiple intervals
Plain conductor portion；Dielectric layer 4 is arranged on the surface far from above-mentioned substrate 1 of above-mentioned metal carbonyl conducting layer 2, such as Fig. 2 institute in step S3
Show；Step S4, as shown in figure 3, forming the through-hole 5 at multiple intervals using dual damascene process, above-mentioned through-hole 5 is provided with above-mentioned
In dielectric layer 4, above-mentioned through-hole 5 is connect correspondingly with above-mentioned plain conductor portion, as shown in figure 4, above-mentioned through-hole 5 includes first
Part 51 and second part 52, above-mentioned first part 51 is close to above-mentioned substrate 1, above-mentioned second part 52 and above-mentioned first part 51
Connection, and the depth of above-mentioned second part 52 is less than the depth of above-mentioned first part 51, and the width of above-mentioned second part 52 is big
In the width of above-mentioned first part 51；Step S5 fills hearth electrode material 06 in each above-mentioned through-hole 5, forms bottom shown in fig. 6
Electrode 6, the surface of the separate above-mentioned substrate 1 of above-mentioned hearth electrode 6 and the surface far from above-mentioned substrate 1 of above-mentioned dielectric layer 4 are same
In one plane, above-mentioned hearth electrode material 06 is the conductive material of non-copper.
Above-mentioned dual damascene process is the dual damascene process in usual semiconductor technology, also referred to as dual damascene work
Skill, the technique do not include the process of depositions of bottom electrode material, which refers to forms a packet in one or more material layers
Include the through-hole 5 of two parts of different pore size, the depth of the two parts and dual damascene process of different size, i.e., above-mentioned
Refer to and forms the through-hole including different depth and two parts of the connection of different in width in one or more material layers
5。
In the above-mentioned production method of the application, multiple intervals are directly formed in dielectric layer 4 using dual damascene process
Through-hole 5, hearth electrode material 06 is then filled in each through-hole 5, and then form the hearth electrode 6 at multiple intervals, this avoid
Copper is filled in through-hole 5 by elder generation in the prior art, the two-step process of hearth electrode 6 is then arranged on copper again, and due to being not provided with
Cu, avoiding leads to the problem of cannot forming smoother surface since the hardness of Cu is lower.
In order to further such that hearth electrode material 06 can be more efficiently and rapidly filled in above-mentioned first part 51, into
And guarantee in first part 51 full of hearth electrode material 06, and then ensure that the good electric conductivity of the MRAM, the one of the application
In kind embodiment, as shown in figure 4, the depth of above-mentioned first part 51 is H, the width of above-mentioned first part 51 is W, H:W < 1.
In another embodiment of the application, between above-mentioned steps S1 and above-mentioned steps S3, above-mentioned production method is also wrapped
Include: barrier layer 3 is arranged on the surface far from above-mentioned substrate 1 of above-mentioned metal carbonyl conducting layer 2 in step S2, and above-mentioned through-hole 5 is provided with
In above-mentioned dielectric layer 4 and above-mentioned barrier layer 3.The setting on the barrier layer 3 can prevent the conductive material in through-hole 5 to be diffused into dielectric
In layer 4, it is with good performance to further ensure MRAM.
Metal carbonyl conducting layer 2 in the application is formed using Damascus technics, metal carbonyl conducting layer 2, blocking in the application
Layer 3, dielectric layer 4 and hearth electrode material 06 can be formed using any suitable method in the prior art, such as dielectric layer 4
It can be formed using chemical vapour deposition technique etc..
Above-mentioned barrier layer 3 can be what 3 material of any barrier layer in the prior art was formed, such as N-BLOK/NDC
(SiNC) etc. materials, those skilled in the art can select suitable material to form barrier layer 3 according to the actual situation.The layer is specific
It can be deposited by the methods of CVD.
In order to form more flat hearth electrode 6, in a kind of embodiment of the application, above-mentioned steps S5 includes: step
S51, as shown in figure 5, above-mentioned hearth electrode material 06 is arranged in each above-mentioned through-hole 5；Step S52, using chemical mechanical polishing method
The above-mentioned hearth electrode material 06 outside above-mentioned through-hole 5 is removed, the above-mentioned hearth electrode material 06 in above-mentioned through-hole 5 is formed as shown in Figure 6
Above-mentioned hearth electrode 6.
In the another embodiment of the application, above-mentioned steps S52 is implemented using lapping liquid, above-mentioned lapping liquid is to above-mentioned bottom electricity
The grinding rate of pole material 06 is V1, and above-mentioned lapping liquid is V2, V1:V2 > 50 to the grinding rate of above-mentioned dielectric layer 4.Such energy
It is enough preferably to control process of lapping, so that process of lapping accurately stops on dielectric layer 4, and then obtain more flat table
Face.
In order to select the lapping liquid of more high selectivity ratio, the process of lapping of hearth electrode material 06 is preferably controlled, will be ground
Mill terminal is accurately parked on dielectric layer 4, and then guarantees the uniformity of MRAM, and guarantee the electric conductivity of hearth electrode 6 simultaneously, this
In a kind of embodiment of application, above-mentioned hearth electrode material 06 is TaN, in the prior art, lapping liquid to the grinding rate of TaN with it is right
The ratio of the grinding rate of dielectric layer 4 can achieve 100 or more.
The material of dielectric layer 4 in the application, which can be, in the prior art any has good insulation performance and not shadow
The material of MRAM work is rung, those skilled in the art can select suitable material to form dielectric layer 4 according to the actual situation.
In order into the resistance for reducing MRAM, and then reduce the energy consumption of MRAM, in a kind of embodiment of the application, above-mentioned dielectric
The material of layer 4 is selected from low-K material and/or ultra low-K material.Such as nitrogen silicon compound or nitrogen-oxygen-silicon compound.
In another embodiment of the application, the material of above-mentioned metal carbonyl conducting layer 2 is Cu.The resistance of Cu is lower, can be obvious
Reduce RC delays (RC delay) effect.
Certainly, the material of the metal carbonyl conducting layer 2 of the application is not limited to above-mentioned Cu, and those skilled in the art can basis
The other suitable conductive materials of actual conditions selection form summary conductor layer.
In another embodiment of the application, above-mentioned production method further include: be arranged on the surface of above-mentioned hearth electrode 6
The step of other structure sheafs in MTJ device in addition to above-mentioned hearth electrode 6.Specifically, other structure sheafs include free layer,
Reference layer, insulative barriers layer and top electrode etc..
Substrate 1 in the application is comprising substrate and in all necessary structures of the road substrate Shang Qian technique and device
Part, for example including CMOS etc..
In the typical embodiment of the another kind of the application, a kind of MRAM is provided, as shown in fig. 6, above-mentioned MRAM includes
Substrate 1, metal carbonyl conducting layer 2, dielectric layer 4 and hearth electrode 6, metal carbonyl conducting layer 2 are arranged on the surface of above-mentioned substrate 1, above-mentioned gold
Belong to the plain conductor portion that conductor layer 2 includes multiple intervals；The separate above-mentioned substrate 1 of above-mentioned metal carbonyl conducting layer 2 is arranged in dielectric layer 4
Surface on, offer the through-hole 5 at multiple intervals in above-mentioned dielectric layer 4, above-mentioned through-hole 5 is corresponded with above-mentioned plain conductor portion
Ground connection, above-mentioned through-hole 5 include first part 51 and second part 52, and above-mentioned first part 51 is close to above-mentioned substrate 1, and above-mentioned the
Two parts 52 are connected to above-mentioned first part 51, and the depth of above-mentioned second part 52 is less than the depth of above-mentioned first part 51,
And the width of above-mentioned second part 52 is greater than the width of above-mentioned first part 51；Hearth electrode 6 is arranged in each above-mentioned through-hole 5, bottom
Electrode is formed by hearth electrode material 06, and the surface far from above-mentioned substrate 1 of above-mentioned hearth electrode 6 is with above-mentioned dielectric layer 4 far from upper
State the surface of substrate 1 in the same plane, above-mentioned hearth electrode material 06 is the conductive material of non-copper.
In above-mentioned MRAM, the conductive material of non-Cu is filled in through-hole 5, forms hearth electrode 6, and hearth electrode 6 here is real
Border is equivalent to the part Cu and the hearth electrode 6 of connection metal carbonyl conducting layer 2 and hearth electrode 6 in the prior art, the production of the MRAM
Simple process, avoid it is in the prior art be initially formed the part Cu, then re-form the complicated technology of hearth electrode 6, and due to logical
It is not filled with Cu in hole 5, avoiding leads to the problem of cannot forming smoother surface since the hardness of Cu is lower, so that
The MRAM is more smooth, and uniformity is preferable, and better performances.
In order to further such that hearth electrode material 06 can be more efficiently and rapidly filled in above-mentioned first part 51, into
And guarantee in first part 51 full of hearth electrode material 06, and then ensure that the good electric conductivity of the MRAM, the one of the application
In kind embodiment, as shown in figure 4, the depth of above-mentioned first part 51 is H, the width of above-mentioned first part 51 is W, H:W < 1.
In another embodiment of the application, as shown in Fig. 2 and Fig. 6, above-mentioned MRAM further includes barrier layer 3, and barrier layer 3 is set
It sets between above-mentioned metal carbonyl conducting layer 2 and above-mentioned dielectric layer 4, above-mentioned through-hole 5 is provided with above-mentioned barrier layer 3 and above-mentioned dielectric layer 4
In.The setting on the barrier layer 3 can prevent the conductive material in through-hole 5 to be diffused into dielectric layer 4, further ensure MRAM tool
There is good performance.
In order to select the lapping liquid of more high selectivity ratio, the process of lapping of hearth electrode material is preferably controlled, will be ground
Terminal accurately stops on the dielectric layer, and then guarantees the uniformity of MRAM, and guarantee the electric conductivity of hearth electrode, the application simultaneously
A kind of embodiment in, above-mentioned hearth electrode material is TaN, in the prior art, lapping liquid to the grinding rate of TaN with to dielectric layer
The ratio of grinding rate can achieve 100 or more.
The material of hearth electrode in the application is not limited to above-mentioned TaN, can be that in the prior art other are any non-
The conductive material of copper, for example, it may be TiN, Ta, Ti or their combination.Those skilled in the art can be according to the actual situation
Suitable material is selected to form hearth electrode.
The material of dielectric layer in the application, which can be, in the prior art any has good insulation performance and not shadow
The material of MRAM work is rung, those skilled in the art can select suitable material to form dielectric layer 4 according to the actual situation.
In order into the resistance for reducing MRAM, and then reduce the energy consumption of MRAM, in a kind of embodiment of the application, above-mentioned dielectric
The material of layer is selected from low-K material and/or ultra low-K material.Such as fluorine doped oxide (SiOF), carbon dope (hydrogen) oxide (SiOC/
) and the dielectric organic polymer of low K etc. SiOCH.
In another embodiment of the application, the material of above-mentioned metal carbonyl conducting layer is Cu.The resistance of Cu is lower, can obviously drop
Low resistance capacitance delays (RC delay) effect.
Certainly, the material of the metal carbonyl conducting layer of the application is not limited to above-mentioned Cu, and those skilled in the art can basis
The other suitable conductive materials of actual conditions selection form summary conductor layer.
In order to enable those skilled in the art can clearly understand the technical solution of the application, below with reference to tool
The embodiment of body illustrates the technical solution of the application.
Embodiment
The production method of MRAM includes:
Prepare the substrate 1 including the structure prepared by preceding road technique in substrate and substrate；
Metal carbonyl conducting layer 2 is formed using Damascus technics on the surface of substrate 1, as shown in Fig. 2, above-mentioned plain conductor
Layer 2 includes the plain conductor portion at multiple intervals；
NDC is deposited on the surface of the separate substrate 1 in each plain conductor portion, forms barrier layer 3；
SiO is formed using PECVD using TEOS on barrier layer 32Layer, that is, form dielectric layer 4 shown in Fig. 3；
Through-hole 5 including first part 51 and second part 52 is formed using dual damascene process, as shown in figure 4, on
First part 51 is stated close to above-mentioned substrate 1, above-mentioned second part 52 is connected to above-mentioned first part 51, and the depth of first part 51
Degree isThe depth of above-mentioned second part 52 isAnd the width of above-mentioned first part 51 isAbove-mentioned second
The width of part 52 is
As shown in figure 5, filling metal TaN in through-hole 5, body structure surface is planarized using chemical mechanical polishing method, shape
At hearth electrode 6 shown in fig. 6, and the surface far from above-mentioned substrate 1 of above-mentioned hearth electrode 6 and above-mentioned dielectric layer 4 is separate above-mentioned
The surface of substrate 1 is in the same plane.Grinding of the lapping liquid used in chemical mechanical polishing method to above-mentioned hearth electrode material 06
Speed is V1, and above-mentioned lapping liquid is V2, V1:V2=100 to the grinding rate of above-mentioned dielectric layer 4.
The production method not only can to avoid filling copper after caused by surface irregularity the problem of, pass through hearth electrode material
Selection and the selection of lapping liquid stop the grinding of last hearth electrode material accurately on the dielectric layer, so that being formed
MRAM not only there is flat surface also there is preferable uniformity, guarantee that the MRAM has preferable performance.
It can be seen from the above description that the application the above embodiments realize following technical effect:
1), in the above-mentioned production method of the application, multiple are directly formed in the dielectric layer using dual damascene process
Every through-hole, hearth electrode material is then filled in each through-hole, and then form the hearth electrode at multiple intervals, this avoid existing
Copper is filled in through-holes by elder generation in technology, and the two-step process of hearth electrode is then arranged on copper again, and due to being not provided with Cu, avoids
Since the hardness of Cu is lower lead to the problem of cannot forming smoother surface.Dexterously by the chemistry of existing hearth electrode
" grinding off dielectric layer to control polishing end point on hearth electrode material such as TaN " in mechanical polishing manufacture procedure, which is changed into, " grinds off bottom electricity
Pole material controls polishing end point on the dielectric layer ", with grinding using the existing selection ratio big with TaN:TEOS in the market
Grinding fluid is realized.
2), in the MRAM of the application, the conductive material of non-Cu is filled in through-holes, forms hearth electrode, hearth electrode here
Actually it is equivalent to the part Cu and the hearth electrode of connection metal carbonyl conducting layer 2 and hearth electrode in the prior art, the production of the MRAM
Simple process, avoid it is in the prior art be initially formed the part Cu, then re-form the complicated technology of hearth electrode, and due to through-hole
In be not filled with Cu, avoiding leads to the problem of cannot forming smoother surface since the hardness of Cu is lower so that should
MRAM is more smooth, and uniformity is preferable, and better performances.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (12)
1. a kind of production method of MRAM, which is characterized in that the production method includes:
Step S1, is arranged metal carbonyl conducting layer on a surface of the substrate, and the metal carbonyl conducting layer includes the plain conductor at multiple intervals
Portion；
Dielectric layer is arranged on the surface far from the substrate of the metal carbonyl conducting layer in step S3；
Step S4 forms the through-hole at multiple intervals using dual damascene process, and the through-hole is provided in the dielectric layer, institute
Through-hole to be stated to connect correspondingly with the plain conductor portion, the through-hole includes first part and second part, and described first
Part is connected to close to the substrate, the second part with the first part, and the depth of the second part is less than described
The depth of first part, and the width of the second part is greater than the width of the first part；And
Step S5 fills hearth electrode material in each through-hole, forms hearth electrode, the separate substrate of the hearth electrode
In the same plane, the hearth electrode material is the conduction of non-copper for surface and the surface far from the substrate of the dielectric layer
Material.
2. manufacturing method according to claim 1, which is characterized in that the depth of the first part be H, described first
The width divided is W, H:W < 1.
3. manufacturing method according to claim 1, which is characterized in that between the step S1 and the step S3, institute
State production method further include:
Barrier layer is arranged on the surface far from the substrate of the metal carbonyl conducting layer in step S2, and the through-hole is provided with institute
It gives an account of in electric layer and the barrier layer.
4. manufacturing method according to claim 1, which is characterized in that the step S5 includes:
The hearth electrode material is arranged in step S51 in each through-hole；And
Step S52 removes the hearth electrode material outside the through-hole using chemical mechanical polishing method, described in the through-hole
Hearth electrode material forms the hearth electrode.
5. production method according to claim 4, which is characterized in that the step S52 is implemented using lapping liquid, it is described to grind
Grinding fluid is V1 to the grinding rate of the hearth electrode material, and the lapping liquid is V2, V1:V2 to the grinding rate of the dielectric layer
>50。
6. manufacturing method according to claim 1, which is characterized in that the hearth electrode material is TaN.
7. manufacturing method according to claim 1, which is characterized in that the material of the dielectric layer be selected from low-K material and/or
Ultra low-K material.
8. manufacturing method according to claim 1, which is characterized in that the material of the metal carbonyl conducting layer is Cu.
9. a kind of MRAM, which is characterized in that the MRAM includes:
Substrate (1)；
Metal carbonyl conducting layer (2) is arranged on the surface of the substrate (1), and the metal carbonyl conducting layer (2) includes the gold at multiple intervals
Belong to wire portion；
Dielectric layer (4) is arranged on the surface far from the substrate (1) of the metal carbonyl conducting layer (2), the dielectric layer (4)
In offer the through-hole (5) at multiple intervals, the through-hole (5) connect correspondingly with the plain conductor portion, the through-hole
It (5) include first part (51) and second part (52), the first part (51) is close the substrate (1), and described second
(52) are divided to be connected to the first part (51), and the depth of the second part (52) is less than the depth of the first part (51)
Degree, and the width of the second part (52) is greater than the width of the first part (51)；And
Hearth electrode (6), including hearth electrode material (06) are arranged in each through-hole (5), the separate institute of the hearth electrode (6)
In the same plane, the bottom is electric on the surface far from the substrate (1) on the surface and the dielectric layer (4) of stating substrate (1)
Pole material (06) is the conductive material of non-copper.
10. MRAM according to claim 9, which is characterized in that the depth of the first part (51) be H, described first
Partially the width of (51) is W, H:W < 1.
11. MRAM according to claim 9, which is characterized in that the MRAM further include:
Barrier layer (3) is arranged between the metal carbonyl conducting layer (2) and the dielectric layer (4), and the through-hole (5) is provided with institute
It states in barrier layer (3) and the dielectric layer (4).
12. MRAM according to claim 9, which is characterized in that the hearth electrode material (06) is TaN.
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