CN109216518B - 抗静电led芯片制备方法及其应用 - Google Patents

抗静电led芯片制备方法及其应用 Download PDF

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CN109216518B
CN109216518B CN201710521464.0A CN201710521464A CN109216518B CN 109216518 B CN109216518 B CN 109216518B CN 201710521464 A CN201710521464 A CN 201710521464A CN 109216518 B CN109216518 B CN 109216518B
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led chip
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quantum well
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CN109216518A (zh
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杨晓隆
王怀兵
王辉
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Suzhou Nanojoin Photonics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

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Abstract

本发明提供了一种抗静电LED芯片，所述芯片包括一衬底，所述衬底上由下至上依次设置有第一P型层、量子阱层、N型层、量子阱层、第二P型层，所述第一P型层及第二P型层上外延生长有电容区。本发明通过增加电容区，当电压超过器件最大范围时，电容区将自动收集静电电荷，避免LED芯片或外延片受到冲击，损坏LED器件。

Description

抗静电LED芯片制备方法及其应用
技术领域
本发明属于半导体技术领域，具体涉及一种抗静电LED芯片及其制备方法。
背景技术
随着 LED 技术的快速发展以及 LED 光效的逐步提高，LED 的应用将越来越广泛。随着全球性能源短缺问题的日益严重，人们越来越关注 LED 在照明市场的发展前景，LED 将是取代白炽灯、钨丝灯和荧光灯的潜力光源。LED 照明市场发展空间广阔。LED 照明灯具应用已经从过去室外景观照明 LED 发展向室内照明应用。行业内，静电是造成LED器件失效的主要原因之一，其主要原因是由于静电释放会导致LED器件的漏电死灯现象，因此，为提高LED的可靠性能和寿命，使LED芯片具有抗静电将发挥异常重要的作用。
发明内容
本发明的目的在于解决上述的技术问题，提供了一种抗静电LED芯片制备及其应用。
本发明的目的通过以下技术方案来实现：
抗静电LED芯片制备方法，包括如下步骤：
S1、在氢气气氛下，高温处理衬底，并在衬底上生长非掺杂GaN层；
S2，在非掺杂GaN 层表面依次生长第一P型层、量子阱层、N型层及量子阱层、第二P型层；
所述第一P型层和所述第二P 型层上均设置有一用于收集电荷的电容区。
有选地，所述电容区为电极。
有选地，所述电极包括设置于第二P型层上的第二电极，及设置于所述第一P型层上的第一电极。
有选地，所述第一电极制备时，先通过在第二P型层上进行蚀刻露出第一P型层，在所述第一P型成上制备电极形成第一电极。
一种如权利要求1所述的抗静电LED芯片制备方法制得的抗静电LED芯片。
有选地，所述芯片包括一衬底，所述衬底上由下至上依次设置有第一P型层、量子阱层、N型层、量子阱层、第二P型层，所述第一P型层及第二P型层上外延生长有电容区。
本发明的原理为当通入正向电流时，N型层和第二P型层及中间的量子阱开始工作，电能转换为光能；当反向静电通入时，第一P型层，量子阱和N型层，开始吸收电荷，避免LED损伤。电极通过P和N的三层叠加，实现静电电荷的吸收，缓解静电冲击；
本发明的有益效果体现在：本发明通过增加电容区，当电压超过器件最大范围时，电容区将自动收集静电电荷，避免LED芯片或外延片受到冲击，损坏LED器件。
附图说明
图1：本发明的结构示意图。
具体实施方式
以下结合实施例具体阐述本发明的技术方案，本发明揭示了一种抗静电LED芯片及其制备方法。如图1所示，所述芯片包括一衬底，所述衬底上生长有非掺杂GaN层，所述非掺杂GaN层由下至上依次设置有第一P型层、量子阱层、N型层、量子阱层、第二P型层，所述第一P型层及第二P型层上外延生长有电容区。
本发明所述电容区实际为电极，所述电极包括设置于第二P型层上的第二电极，及设置于所述第一P型层上的第一电极。
所述第一电极制备时，先通过在第二P型层上进行蚀刻露出第一P型层，在所述第一P型成上制备电极形成第一电极。
所述芯片的结构也可以为其他形式，例如在P型层和量子阱层中生长有有源层等，芯片结构可采用现有技术中的任意结构，在此不再赘述。但采用本发明中通过电极将静电引出，为本发明之根本。
本发明尚有多种具体的实施方式。凡采用等同替换或者等效变换而形成的所有技术方案，均落在本发明要求保护的范围之内。

Claims (4)

1.抗静电LED芯片制备方法，包括如下步骤：
S1、在氢气气氛下，高温处理衬底，并在衬底上生长非掺杂GaN 层；
S2，在非掺杂GaN 层表面依次生长第一P型层、量子阱层、N型层及量子阱层、第二P型层；
其特征在于：所述第一P型层和所述第二P型层上均设置有一用于收集电荷的电容区；
所述电容区为电极；
所述电极包括设置于第二P型层上的第二电极，及设置于所述第一P型层上的第一电极。
2.如权利要求1所述的抗静电LED芯片制备方法，其特征在于：所述第一电极制备时，先通过在第二P型层上进行蚀刻露出第一P型层，在所述第一P型成上制备电极形成第一电极。
3.一种如权利要求1所述的抗静电LED芯片制备方法制得的抗静电LED芯片。
4.如权利要求3所述的抗静电LED芯片，其特征在于：所述芯片包括一衬底，所述衬底上由下至上依次设置有第一P型层、量子阱层、N型层、量子阱层、第二P型层，所述第一P型层及第二P型层上外延生长有电容区。
CN201710521464.0A 2017-06-30 2017-06-30 抗静电led芯片制备方法及其应用 Expired - Fee Related CN109216518B (zh)

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