CN109216379B - Mother board and detection method thereof - Google Patents
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- CN109216379B CN109216379B CN201811105708.8A CN201811105708A CN109216379B CN 109216379 B CN109216379 B CN 109216379B CN 201811105708 A CN201811105708 A CN 201811105708A CN 109216379 B CN109216379 B CN 109216379B
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- 238000001514 detection method Methods 0.000 title claims abstract description 277
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
Abstract
The invention discloses a mother board and a detection method thereof, the mother board comprises a substrate, a plurality of display areas positioned on the substrate, and non-display areas positioned between the display areas, the display areas comprise thin film transistors used for controlling pixel display, and the detection method comprises the following steps: at least one detection element located in the non-display area; the quality of an interface between the source and drain electrodes and the active layer in the thin film transistor is reflected by arranging the detection elements which are equal to the active layer and the source and drain electrodes in the non-display area and detecting the contact resistance between the first electrode or the second electrode and the third electrode in the non-display area, so that the quality of the interface between the source and drain electrodes and the active layer is monitored, and the quality of the display panel is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a motherboard and a detection method thereof.
Background
With the development of display technology, people have higher and higher requirements on the display quality of the display panel, and the design of the array substrate is more and more refined, wherein the conductivity of the thin film transistor on the array substrate directly affects the accuracy of data transmission of the display panel.
The quality of the interface between the film and the film directly affects the conduction capability of electrons, thereby affecting the magnitude of transmission current, and particularly, the quality of the interface film between the active layer and the source/drain electrode in the thin film transistor directly affects the conduction capability of the thin film transistor, thereby affecting the magnitude of current when the thin film transistor is in an on state, and affecting the data transmission of the display panel. However, the difficulty of directly detecting the quality of the interface between the active layer and the source/drain electrode without damaging the film layer is high, and in the prior art, the quality of the interface between the active layer and the source/drain electrode is not effectively monitored.
Therefore, how to monitor the quality of the interface between the active layer and the source/drain electrode and improve the quality of the display panel is a technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
The invention provides a mother board and a detection method thereof, which are used for solving the problem that the interface quality between an active layer and a source/drain electrode is not effectively monitored in the prior art.
The embodiment of the invention provides a motherboard, which comprises a substrate, a plurality of display areas and a non-display area, wherein the display areas are positioned on the substrate, the non-display area is positioned between the display areas, and each display area comprises a thin film transistor for controlling pixel display and at least one detection element positioned in the non-display area;
the detection element includes: the thin film transistor comprises a first electrode and a second electrode which are arranged on the same layer as a source electrode and a drain electrode of the thin film transistor, and a third electrode which is arranged on the same layer as an active layer of the thin film transistor, wherein the first electrode and the third electrode have an overlapped area, the second electrode and the third electrode have an overlapped area, and the first electrode and the second electrode are not overlapped.
In a possible implementation manner, in the foregoing motherboard provided in an embodiment of the present invention, the detection element further includes: the detection device comprises a first detection electrode and a second detection electrode, wherein the first detection electrode and the second detection electrode are respectively connected with the first electrode and the second electrode through leads.
In a possible implementation manner, in the motherboard provided in an embodiment of the present invention, the non-display area includes at least three detection elements: the detection device comprises a first detection element, a second detection element and a third detection element, wherein the overlapping areas of the first electrode and the third electrode in all the detection elements are equal;
the sum of the areas of the first detection electrode and the second detection electrode in the first detection element and the second detection element and the area of the lead are equal, and the area of the non-overlapped part of the third electrode and the first electrode and the second electrode in the second detection element is not equal to the area of the non-overlapped part of the third electrode and the first electrode and the second electrode in the first detection element;
the area of the non-overlapped part of the third electrode, the first electrode and the second electrode in the third detection element is equal to the area of the non-overlapped part of the third electrode, the first electrode and the second electrode in the first detection element, the area of the lead in the third detection element is not equal to the area of the lead in the first detection element, and the sum of the areas of the first detection electrode and the second detection electrode in the third detection element is not equal to the sum of the areas of the first detection electrode and the second detection electrode in the first detection element.
In a possible implementation manner, in the motherboard provided in an embodiment of the present invention, in all the detection elements, the lead, the first detection electrode, the second detection electrode, the first electrode, and the second electrode are all disposed in the same layer.
In a possible implementation manner, in the motherboard provided in an embodiment of the present invention, widths of the leads in the detection elements are equal, and lengths of the leads in the third detection element are not equal to lengths of the leads in the first detection element.
In a possible implementation manner, in the motherboard provided in an embodiment of the present invention, a sum of areas of the first detection electrode and the second detection electrode in the third detection element is not equal to a sum of areas of the first detection electrode and the second detection electrode in the first detection element.
In a possible implementation manner, in the motherboard provided in an embodiment of the present invention, widths of the third electrodes in the detection elements are the same;
the length of the non-overlapping part of the third electrode and the first and second electrodes in the second detection element is not equal to the length of the non-overlapping part of the third electrode and the first and second electrodes in the first detection element.
Correspondingly, an embodiment of the present invention further provides a detection method for a motherboard, where when the detection element includes the first electrode, the second electrode, and the third electrode, the detection method includes: detecting a first resistance value between the first electrode and the second electrode within the non-display area;
and calculating the contact resistance between the first electrode and the third electrode and the contact resistance between the second electrode and the third electrode according to the resistance of the non-overlapped part of the third electrode and the first electrode and the second electrode.
In a possible implementation manner, in the above motherboard detecting method provided in an embodiment of the present invention, when the detecting element includes the first electrode, the second electrode, the third electrode, the first detecting electrode, the second detecting electrode, and the lead, the detecting method includes:
detecting a second resistance value between the first detection electrode and the second detection electrode;
calculating contact resistance between the first electrode and the second electrode and the third electrode according to the second resistance value, the resistance of the first detection electrode, the resistance of the second detection electrode, the resistance of the lead, and the resistance value of the non-overlapping portion of the third electrode with the first electrode and the second electrode.
In a possible implementation manner, in the above motherboard detection method provided in an embodiment of the present invention, the non-display area includes: the detection method includes, when the first detection element, the second detection element, and the third detection element are used, the steps of:
detecting a third resistance value between the first detection electrode and the second detection electrode in the first detection element, a fourth resistance value between the first detection electrode and the second detection electrode in the second detection element, and a fifth resistance value between the first detection electrode and the second detection electrode in the third detection element;
calculating a contact resistance between the first and second electrodes and the third electrode from the third, fourth, and fifth resistance values.
The invention has the following beneficial effects:
the embodiment of the invention provides a mother board and a detection method thereof, wherein the mother board comprises a substrate, a plurality of display areas positioned on the substrate and non-display areas positioned between the display areas, the display areas comprise thin film transistors used for controlling pixel display, and the detection method comprises the following steps: at least one detection element located in the non-display area; the detection element includes: the thin film transistor comprises a first electrode and a second electrode which are arranged on the same layer as a source electrode and a drain electrode of the thin film transistor, and a third electrode which is arranged on the same layer as an active layer of the thin film transistor, wherein the first electrode and the third electrode have an overlapped area, the second electrode and the third electrode have an overlapped area, and the first electrode and the second electrode are not overlapped. The quality of an interface between the source and drain electrodes and the active layer in the thin film transistor is reflected by arranging the detection elements which are equal to the active layer and the source and drain electrodes in the non-display area and detecting the contact resistance between the first electrode or the second electrode and the third electrode in the non-display area, so that the quality of the interface between the source and drain electrodes and the active layer is monitored, and the quality of the display panel is improved.
Drawings
Fig. 1 is a schematic structural diagram of a motherboard according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a detecting element according to an embodiment of the present invention;
FIG. 3 is a second schematic structural diagram of a detecting element according to an embodiment of the present invention;
fig. 4 is a third schematic structural diagram of a detecting element according to an embodiment of the present invention.
Detailed Description
The embodiment of the invention provides a motherboard and a detection method thereof, aiming at the problem that the quality of an interface between a source electrode and a drain electrode of a thin film transistor and an active layer cannot be effectively monitored in the prior art. In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The shapes and sizes of the various elements in the drawings are not to scale and are merely intended to illustrate the invention.
Specifically, the present invention provides a motherboard, as shown in fig. 1 and fig. 2, including a substrate 1, a plurality of display regions 2 located on the substrate 1, and a non-display region located between the display regions 2, the display regions 2 including thin film transistors 3 for controlling pixel display, and at least one detection element 4 located in the non-display region;
the detection element 4 includes: the first electrode 41 and the second electrode 42 are disposed on the same layer as the source/drain electrode of the thin film transistor 3, the third electrode 43 is disposed on the same layer as the active layer of the thin film transistor, the first electrode 41 overlaps with the third electrode 43, the second electrode 42 overlaps with the third electrode 43, and the first electrode 41 does not overlap with the second electrode 42.
It should be noted that, in the motherboard provided in the embodiment of the present invention, in fig. 1, each detection element is located at a non-display area between two different display areas, and of course, each detection element may be located in the non-display area in a regular manner or an irregular manner, where the non-display area refers to a frame area of a display panel, but the motherboard is cut in a structure in which the display panel is manufactured, and the detection element is located at the cut-off area.
Specifically, in the mother board provided in the embodiment of the present invention, the detection element is formed while the source-drain electrode and the active layer of the display panel are prepared, and before other film layers are not prepared after the source-drain electrode and the active layer are prepared, the contact resistance between the first electrode, the second electrode, and the third electrode in the detection element located in the display region is measured, and the contact resistance between the source-drain electrode and the active layer in the display region is represented by the contact resistance between the first electrode, the second electrode, and the third electrode in the non-display region, so that the interface quality between the source-drain electrode and the active layer is obtained, and the process can be adjusted in time by monitoring the interface quality, so as to improve the quality of the display panel.
Wherein the measuring of the contact resistance between the first electrode and the third electrode is performed by an electrical characteristic measuring machine, two probes of the electrical characteristic measuring machine are respectively pricked on the first electrode and the second electrode to measure the resistance value between the first electrode and the second electrode, and the resistance of the non-overlapped part of the third electrode and the first electrode and the second electrode can be obtained by parameters such as the occupied area, etc., the contact resistance between the first electrode and the third electrode and the contact resistance between the second electrode and the third electrode can be obtained by subtracting the resistance of the non-overlapped part of the third electrode and the first electrode from the resistance value measured between the first electrode and the second electrode, the contact resistance between the source and drain electrodes and the active layer of the thin film transistor in the display area is represented through the contact resistance, so that the film layer of the thin film transistor is prevented from being damaged.
An embodiment of the present invention provides a motherboard, including a substrate, a plurality of display regions located on the substrate, and a non-display region located between the display regions, where the display regions include thin film transistors for controlling pixel display, including: at least one sensing element located in the non-display area; the detection element includes: the thin film transistor comprises a first electrode and a second electrode which are arranged on the same layer as a source electrode and a drain electrode of the thin film transistor, and a third electrode which is arranged on the same layer as an active layer of the thin film transistor, wherein an overlapping area exists between the first electrode and the third electrode, an overlapping area exists between the second electrode and the third electrode, and the first electrode and the second electrode are not overlapped. The quality of an interface between the source and drain electrodes and the active layer in the thin film transistor is reflected by arranging the detection elements which are equal to the active layer and the source and drain electrodes in the non-display area and detecting the contact resistance between the first electrode or the second electrode and the third electrode in the non-display area, so that the quality of the interface between the source and drain electrodes and the active layer is monitored, and the quality of the display panel is improved.
Optionally, in the motherboard provided in the embodiment of the present invention, as shown in fig. 3, the detection element further includes: a first detection electrode 45 and a second detection electrode 46, the first detection electrode 45 and the second detection electrode 46 being connected to the first electrode 41 and the second electrode 42, respectively, through a lead 44.
When the detection element comprises a first electrode, a second electrode, a third electrode, a first detection electrode, a second detection electrode and a lead, two probes of an electrical characteristic measuring machine can be respectively inserted into the first detection electrode and the second detection electrode to detect the resistance value between the first detection electrode and the second detection electrode, and the known resistances of the first detection electrode, the second detection electrode, the lead and the non-overlapped part of the third electrode and the first electrode and the second electrode are subtracted by the resistance value to obtain the contact resistance between the first electrode, the second electrode and the third electrode.
Specifically, in the motherboard provided in the embodiment of the present invention, if the first detection electrode, the second detection electrode, and the lead wire are not provided, when the electrical characteristic measuring machine is used for detection, the probe of the electrical characteristic measuring machine needs to be inserted into the first electrode and the second electrode for measurement, so that the film layers of the first electrode and the second electrode are damaged, and the damage of the film layers affects the accuracy of the detection result.
Optionally, in the motherboard provided in the embodiment of the present invention, as shown in fig. 4, the motherboard includes at least three detection elements in the non-display area: a first detecting element a, a second detecting element b and a third detecting element c, wherein the overlapping area of the first electrode 41 and the third electrode 43 in all the detecting elements is equal to the overlapping area of the second electrode 42 and the third electrode 43;
the sum of the areas of the first detection electrodes 45 and the second detection electrodes 46 of the first detection element a and the second detection element b, and the area of the lead 44 are equal, and the area of the non-overlapped part of the third electrode 43 and the first electrode 41 and the second electrode 42 in the second detection element b is not equal to the area of the non-overlapped part of the third electrode 43 and the first electrode 41 and the second electrode 42 in the first detection element a;
the area of the non-overlapped part of the third electrode 43 and the first and second electrodes 41 and 42 in the third detection element c is equal to the area of the non-overlapped part of the third electrode 43 and the first and second electrodes 41 and 42 in the first detection element a, the area of the lead 44 in the third detection element c is not equal to the area of the lead 44 in the first detection element a, and the sum of the resistances of the first and second detection electrodes 45 and 46 in the third detection element c is not equal to the sum of the areas of the first and second detection electrodes 45 and 46 in the first detection element a.
Specifically, in the motherboard provided in the embodiment of the present invention, three detection elements shown in fig. 4 are used: the first detecting element a, the second detecting element b and the second detecting element c are taken as examples, wherein the first detecting element a comprises two leads 44 (taking the two leads have equal resistance as an example), and the resistance of each lead 44 is RL2The resistances of the first detection electrode 45 and the second detection electrode 46 are both RS(taking the example that the areas of the first detection electrode 45 and the second detection electrode 46 are equal), the contact resistances between the first electrode 41 and the third electrode 43 and between the second electrode 42 are all RCThe resistance of the portion of the third electrode 43 not overlapping the first electrode 41 and the second electrode 42 is RL1Two probes of the electrical characteristic measuring machine are respectively contacted with the first detection electrode 45 and the second detection electrode 46 to obtain the resistance value R1I.e. R1＝2RL2+2RS+2RC+RL1. Likewise, since the resistance of the portion of the second sensing element b where the third electrode 43 does not overlap with the first and second electrodes 41 and 42 is twice as high as the resistance of the portion of the first sensing element a where the third electrode 43 does not overlap with the first and second electrodes 41 and 42, the resistance of the portion of the second sensing element b where the third electrode 43 does not overlap with the first and second electrodes 41 and 42 is 2RL1The resistance value detected by the electrical characteristic measuring machine is R2I.e. R2＝2RL2+2RS+2RC+2RL1. Since the resistance of the lead wire 44 of the third sensing element c is 2 times that of the lead wire 44 of the first sensing element a, the sum of the resistances of the first sensing electrode 45 and the second sensing electrode 46 is 2 times that of the first sensing electrode 45 and the second sensing electrode 46 of the first sensing element a, and the resistance value detected by the electrical characteristic measuring machine is R3I.e. R3＝4RL2+4RS+2RC+RL1。
In summary, three equations can be derived:
R1＝2RL2+2RS+2RC+RL1；
R2＝2RL2+2RS+2RC+2RL1；
R3＝4RL2+4RS+2RC+RL1。
the contact resistance R of the first electrode or the second electrode and the third electrode can be calculated according to the three equationsC＝1/2(3R1-R2-R3) That is, by detecting the resistance between the first detection electrode and the second detection electrode in the three detection elements, the contact resistance generated by the direct contact between the probe and the third electrode can be prevented from affecting the detection result, so that the contact resistance between the first electrode or the second electrode and the third electrode is only equal to the resistance R detected by the electrical characteristic measuring machine1、R2And R3And correlation is carried out, so that the calculation and statistics of the contact resistance of the first electrode or the second electrode and the third electrode are facilitated.
Specifically, the area of the non-overlapping portion between the third electrode and the first and second electrodes in the second detection element in the above-described embodiment is 2 times the area of the non-overlapping portion between the third electrode and the first and second electrodes in the first detection element; the lead area of the third detection element is 2 times that of the first detection element; the sum of the areas of the first detection electrode and the second detection electrode of the third detection element is 2 times the sum of the areas of the first detection electrode and the second detection electrode in the first detection element; the relation of 2 times is used as an example for explanation, but it is needless to say that other relations of multiple, such as 3 times, 4 times, 5 times, etc., are also possible, and the relation is not limited specifically here.
It should be noted that, in the motherboard provided in the embodiment of the present invention, the non-display area may include a plurality of detection elements, and is not limited to 3 detection elements, the detection of the plurality of detection elements is performed in the above manner to increase the accuracy of the detection data, where the number of detection elements is selected according to the actual situation, and is not limited specifically herein.
Optionally, in the motherboard provided in the embodiment of the present invention, in all the detection elements, the lead, the first detection electrode, the second detection electrode, the first electrode, and the second electrode are all disposed in the same layer.
Specifically, in the mother board provided in the embodiment of the present invention, in the detection element, the lead, the first detection electrode, the second detection electrode, the first electrode, and the second electrode are all disposed in the same layer, and are prepared while preparing the source and drain electrodes in the display region, and the same mask may be used for preparation, thereby simplifying the preparation process.
Optionally, in the motherboard provided in the embodiment of the present invention, widths of the leads in the detection elements are equal, and a length of the lead in the third detection element is not equal to a length of the lead in the first detection element.
Specifically, in the motherboard provided in the embodiment of the present invention, for example, in order to ensure that the resistance of the lead in the third detection element is 2 times that of the lead in the first detection element, the line widths of the leads in the first detection element and the third detection element may be set to be the same, and the purpose of adjusting the resistance of the lead is achieved by adjusting the length of the lead, that is, the length of the lead in the third detection element is set to be 2 times that of the lead in the first detection element.
It should be noted that the length of the lead wire refers to the total length of the lead wire in each detection element, wherein each detection element includes two lead wires, and the lengths of the two lead wires may be equal or unequal as long as the requirement of the total length (total resistance value) is met, and whether the lengths are equal is not specifically limited herein.
Optionally, in the motherboard provided in the embodiment of the present invention, a sum of areas of the first detection electrode and the second detection electrode in the third detection element is not equal to a sum of areas of the first detection electrode and the second detection electrode in the first detection element.
Specifically, in the motherboard provided in the embodiment of the present invention, for example, in order to ensure that the sum of the resistances of the first detection electrode and the second detection electrode of the third detection element is 2 times the sum of the resistances of the first detection electrode and the second detection electrode of the first detection element, since the detection electrodes of the detection elements are made of the same material and are preferably prepared by one process, and the thicknesses thereof are also equal, the resistance value of the resistor needs to be adjusted to meet the requirement by adjusting the sum of the areas of the first detection electrode and the second detection electrode in the second detection element.
Optionally, in the motherboard provided in the embodiment of the present invention, the widths of the third electrodes in the detection elements are the same;
the length of the non-overlapped part of the third electrode in the second detection element and the first electrode and the second electrode is not equal to the length of the non-overlapped part of the third electrode in the first detection element and the first electrode and the second electrode.
Specifically, in the mother substrate provided in the embodiment of the present invention, for example, in order to eliminate an influence of the resistance values of the third electrode and the non-overlapping portions of the first electrode and the second electrode, when the widths of the third electrode in the respective detection elements are the same, it is necessary to set the length of the non-overlapping portions of the third electrode and the first electrode and the second electrode in the second detection element to 2 times the length of the non-overlapping portions of the third electrode and the first electrode and the second electrode in the first detection element.
As can be seen from the above, the parameter settings of the first detection element and the second detection element can exclude the influence of the resistance values of the third electrode and the non-overlapping portions of the first electrode and the second electrode, the combination of the first detection element and the third detection element can exclude the influence of the resistance values of the first detection electrode and the second detection electrode, and the combination of the three detection elements can exclude the influence of the resistance values of the third electrode and the non-overlapping portions of the first electrode and the second electrode, the influence of the resistance values of the first detection electrode and the second detection electrode, and the influence of the resistance value of the lead wire, so that the contact resistance of the first electrode or the second electrode and the third electrode is only related to the resistance value detected by the electrical characteristic measuring machine.
Based on the same inventive concept, an embodiment of the present invention further provides a method for detecting a motherboard, where when a detection element includes a first electrode, a second electrode, and a third electrode, the method includes: detecting a first resistance value between the first electrode and the second electrode in the non-display area;
and calculating the contact resistance between the first electrode and the third electrode and the contact resistance between the second electrode and the third electrode according to the resistance of the third electrode and the non-overlapped part of the first electrode and the second electrode.
Optionally, in the motherboard detecting method provided in the embodiment of the present invention, when the detecting element includes a first electrode, a second electrode, a third electrode, a first detecting electrode, a second detecting electrode, and a lead, the detecting method includes:
detecting a second resistance value between the first detection electrode and the second detection electrode;
and calculating the contact resistance between the first electrode and the third electrode and the contact resistance between the second electrode and the third electrode according to the second resistance value, the resistance of the first detection electrode, the resistance of the second detection electrode, the resistance of the lead wire and the resistance value of the non-overlapped part of the third electrode and the first electrode and the second electrode.
Optionally, in the motherboard detection method provided in the embodiment of the present invention, the non-display area includes: when the first detection element, the second detection element and the third detection element are used, the detection method comprises the following steps:
detecting a third resistance value between the first detection electrode and the second detection electrode in the first detection element, a fourth resistance value between the first detection electrode and the second detection electrode in the second detection element, and a fifth resistance value between the first detection electrode and the second detection electrode in the third detection element;
and calculating the contact resistance between the first electrode and the third electrode according to the third resistance value, the fourth resistance value and the fifth resistance value.
Specifically, the detection process and the parameter setting of the motherboard detection method provided in the embodiment of the present invention have been described in detail in the embodiment of the motherboard provided in the present invention, and the implementation of the motherboard detection method in the embodiment of the present invention may be implemented by referring to the embodiment of the motherboard provided in the embodiment of the present invention, and are not described herein again.
The embodiment of the invention provides a mother board and a detection method thereof, wherein the mother board comprises a substrate, a plurality of display areas positioned on the substrate and non-display areas positioned between the display areas, the display areas comprise thin film transistors used for controlling pixel display, and the detection method comprises the following steps: at least one detection element located in the non-display area; the detection element includes: the thin film transistor comprises a first electrode and a second electrode which are arranged on the same layer as a source electrode and a drain electrode of the thin film transistor, and a third electrode which is arranged on the same layer as an active layer of the thin film transistor, wherein the first electrode and the third electrode have an overlapped area, the second electrode and the third electrode have an overlapped area, and the first electrode and the second electrode are not overlapped. The quality of an interface between the source and drain electrodes and the active layer in the thin film transistor is reflected by arranging the detection elements which are equal to the active layer and the source and drain electrodes in the non-display area and detecting the contact resistance between the first electrode or the second electrode and the third electrode in the non-display area, so that the quality of the interface between the source and drain electrodes and the active layer is monitored, and the quality of the display panel is improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (6)
1. A mother substrate including a substrate, a plurality of display regions on the substrate, and a non-display region between the display regions, the display regions including thin film transistors for controlling display of pixels, comprising: at least one detection element located in the non-display area;
the detection element includes: the first electrode and the second electrode are arranged on the same layer as the source and drain electrodes of the thin film transistor, the third electrode is arranged on the same layer as the active layer of the thin film transistor, the first electrode and the third electrode are overlapped, the second electrode and the third electrode are overlapped, and the first electrode and the second electrode are not overlapped;
the detection element further includes: the first detection electrode and the second detection electrode are respectively connected with the first electrode and the second electrode through leads;
the non-display area includes at least three of the detection elements: the detection device comprises a first detection element, a second detection element and a third detection element, wherein the overlapping areas of the first electrode and the third electrode in all the detection elements are equal;
the sum of the areas of the first detection electrode and the second detection electrode in the first detection element and the second detection element and the area of the lead are equal, and the area of the non-overlapped part of the third electrode and the first electrode and the second electrode in the second detection element is not equal to the area of the non-overlapped part of the third electrode and the first electrode and the second electrode in the first detection element;
the area of the non-overlapped part of the third electrode, the first electrode and the second electrode in the third detection element is equal to the area of the non-overlapped part of the third electrode, the first electrode and the second electrode in the first detection element, the area of the lead in the third detection element is not equal to the area of the lead in the first detection element, and the sum of the areas of the first detection electrode and the second detection electrode in the third detection element is not equal to the sum of the areas of the first detection electrode and the second detection electrode in the first detection element.
2. The motherboard of claim 1, wherein the leads, the first sensing electrodes, the second sensing electrodes, the first electrodes, and the second electrodes are all disposed in a same layer in all of the sensing elements.
3. The motherboard of claim 2, wherein the leads in each of the sensing elements have equal widths, and wherein the leads in the third sensing element have a length that is not equal to the length of the leads in the first sensing element.
4. The motherboard of claim 2, wherein a sum of areas of the first detection electrode and the second detection electrode in the third detection element is not equal to a sum of areas of the first detection electrode and the second detection electrode in the first detection element.
5. The motherboard of claim 2, wherein the widths of said third electrodes in each of said sensing elements are the same;
the length of the non-overlapping part of the third electrode and the first and second electrodes in the second detection element is not equal to the length of the non-overlapping part of the third electrode and the first and second electrodes in the first detection element.
6. A motherboard testing method as claimed in any of claims 1-5, characterized in that, when said test elements comprise said first electrode, said second electrode, said third electrode, said first test electrode, said second test electrode and said leads, said testing method comprises:
detecting a resistance value between the first detection electrode and the second detection electrode;
calculating contact resistance between the first electrode and the second electrode and the third electrode according to the resistance value, the resistance of the first detection electrode, the resistance of the second detection electrode, the resistance of the lead wire, and the resistance value of the non-overlapping portion of the third electrode and the first electrode and the second electrode;
the non-display area comprises: the detection method includes, when the first detection element, the second detection element, and the third detection element are used, the steps of:
detecting a first resistance value between the first detection electrode and the second detection electrode in the first detection element, a second resistance value between the first detection electrode and the second detection electrode in the second detection element, and a third resistance value between the first detection electrode and the second detection electrode in the third detection element;
calculating a contact resistance between the first electrode and the second electrode and the third electrode from the first resistance value, the second resistance value and the third resistance value.
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| CN112721416B (en) * | 2019-10-28 | 2022-12-16 | 苏州阿特斯阳光电力科技有限公司 | Electrode chromatography screen plate and electrode contact resistivity testing method |
| CN110930909B (en) * | 2019-11-27 | 2023-10-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel mother board, manufacturing method thereof and display panel |
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| CN104407224A (en) * | 2014-11-27 | 2015-03-11 | 合肥京东方光电科技有限公司 | Semiconductor-metal contact resistivity detection method and array substrate |
| CN106886112A (en) * | 2017-04-27 | 2017-06-23 | 京东方科技集团股份有限公司 | Array base palte, display panel and display device |
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| CN104090389A (en) * | 2014-06-25 | 2014-10-08 | 合肥鑫晟光电科技有限公司 | Test element group, array substrate, display device and testing method |
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