CN109215687A - 用于光信息存储的柔性透明存储器及制备方法 - Google Patents
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Abstract
本发明提供了一种用于光信息存储的柔性透明存储器及制备方法，其中，存储器包括：透明上电极层、透明下电极层以及位于二者之间的透明存储层；所述的透明存储层为量子点掺杂TiO2复合薄膜；所述的透明上电极层和透明下电极层为柔性PI基底上喷墨打印纳米金属导电墨水而成。所述的量子点掺杂TiO2复合薄膜丝网印刷于透明下电极层表面，然后与透明上电极层采用PDMS封装。本发明提供了一种可用于智能包装、柔性可穿戴设备和柔性生物芯片领域的柔性透明存储器，在光作用下，其电阻发生改变，可用作光信息存储器。在柔性基底上采用喷墨打印和丝网印刷技术等方法制作器件，能大幅度降低成本，具有大规模量产的前景。
Description
技术领域
本发明涉及光信息存储技术领域，尤其涉及一种用于光信息存储的柔性透明存储器及制备方法。
背景技术
本发明对于背景技术的描述属于与本发明相关的相关技术，仅仅是用于说明和便于理解本发明的内容，不应理解为申请人明确认为或推定申请人认为是本发明在首次提出申请的申请日的现有技术。
目前，在智能包装、柔性可穿戴设备、柔性生物芯片领域对光信息存储需求日益增大，迫切需要一款柔性、透明且对光有记忆功能的存储器来满足要求。阻变存储器是最具应用前景的下一代非易失性存储器，采用透明TiO2纳米薄膜作为存储介质的存储器具有结构简单、低功耗、与CMOS工艺兼容性好等优点，但TiO2纳米薄膜是一种禁带宽度较宽的半导体材料，在可见光波段吸收小，是透明的，对可见光的利用率低，只有短波长的紫外光照射TiO2纳米薄膜时形成空穴-电子分离，体现为电阻变小。当空穴-电子复合后电阻再次增大。采用量子点掺杂TiO2薄膜作为存储层时，当量子点跟TiO2能带匹配，就会降低电子和空穴的复合率，使存储层薄膜禁带宽度变窄，电子跃迁需要的光子能量小，激发光红移，在可见光作用下也能够发生空穴-电子分离，可见光波长和光强不同，空穴-电子分离和复合程度不同，可以通过控制可见光照射波长和光强来改变器件的阻值，把低阻值定义为“0”，高阻值定义为“1”，阻值在不同的光信号下进行切换，实现存储器“0”或者“1”的存储。此外，在柔性基底上采用喷墨打印和丝网印刷技术等方法制作器件，可以大大降低成本，从而有望实现低成本大规模生产，预测潜在应用将超越智能包装、柔性可穿戴设备和柔性生物芯片的范畴。
发明内容
本发明实施例的目的是提供一种用于光信息存储的柔性透明存储器及制备方法，本发明实施例提供的存储器具有柔性、透明、存储能力强和成本低廉的优点。
本发明的目的是通过如下技术方案实现的：
一方面，本发明实施例提供了一种用于光信息存储的柔性透明存储器，包括透明上电极层、透明下电极层以及位于二者之间的透明存储层；所述的透明存储层为量子点掺杂TiO2复合薄膜；所述的透明下电极层和透明上电极层为柔性PI基底上喷墨打印纳米金属导电墨水而成。
进一步地，所述的柔性基底为5-250μm厚的柔性PI薄膜。
进一步地，所述的透明上电极层和透明下电极层为在柔性PI基底上喷墨打印纳米金属导电墨水形成的一系列直径为50-200μm、宽度为5-15μm的互相重叠的环状结构透明电极层。
进一步地，所述的量子点掺杂TiO2复合薄膜的厚度为100nm-400nm；所述的量子点掺杂TiO2复合薄膜中量子点质量百分数为0.2％-3％。
进一步地，所述的量子点为硅量子点、锗量子点、硫化镉量子点、硒化镉量子点、碲化镉量子点、硒化锌量子点和氧化锆量子点中的至少一种。
进一步地，所述的量子点掺杂TiO2复合薄膜为光生电子-空穴对分离型半导体薄膜，量子点掺杂TiO2复合薄膜形成时，量子点跟TiO2的能带匹配，产生的光生电子进入TiO2的导带，同时也使得电子和空穴分离。
进一步的，所述的量子点掺杂TiO2复合薄膜丝网印刷于透明下电极层表面。
进一步的，所述的表面丝网印刷量子点掺杂TiO2复合薄膜的透明下电极层与透明上电极层采用PDMS封装。
第二方面，本发明实施例提供了一种用于光信息存储的柔性透明存储器的制备方法，包括如下步骤：
(1)在柔性PI薄膜基底上喷墨打印纳米银导电墨水或纳米铜导电墨水形成墨滴，在室温干燥过程中墨滴边缘溶剂挥发比墨滴内部快，使得银纳米颗粒或铜纳米颗粒不断向墨滴边缘积累形成环状结构；对所述的柔性PI薄膜基底上喷墨打印制备的环状结构进行烧结后得到透明上电极层和透明下电极层；
(2)将透明下电极层置于丝网印刷机上，当尼龙网版目数为200-250目，尼龙网版与透明下电极层的距离为2-3mm，刮刀角度为45-60°时进行印刷，在透明下电极层表面获得量子点掺杂TiO2复合薄膜，将丝网印刷量子点掺杂TiO2复合薄膜的透明下电极层室温干燥并烧结。
所述步骤(1)烧结后的透明上电极层和透明下电极层表面的一系列互相重叠的环状结构直径为50-200μm、宽度为5-15μm；所述步骤(2)烧结温度为200-250℃，烧结时间为60-200min。
进一步地，所述的步骤(1)的柔性PI薄膜基底上喷墨打印纳米金属导电墨水形成的一系列互相重叠的环状结构进行烧结，烧结温度为100-200℃，烧结时间为5-50min。
借由上述方案，本发明一种用于光信息存储的柔性透明存储器及制备方法至少具有如下有益效果：
本申请的存储器具有质量轻、柔性、透明、低成本和耗材少等优点，使用量子点掺杂TiO2复合薄膜作为存储层，使得器件测量范围向可见光红移，提升器件的光信息存储能力，通过低阻值和高阻值的切换来实现存储器“0”或者“1”的存储。此外，在柔性基底上采用喷墨打印和丝网印刷技术等方法制作器件，可以大大降低成本，具有大规模量产的产业化前景。
附图说明
为了更清楚地说明本发明的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍：
图1为实施例1所得用于光信息存储的柔性透明存储器的结构示意图；
其中，1为柔性PI薄膜；2为透明下电极层；3为透明下电极表面丝网印刷量子点掺杂TiO2复合薄膜；
图2是柔性PI薄膜基底上喷墨打印形成的一系列互相重叠的环状结构。
具体实施方式
为了更好地说明本发明，下面结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完善地描述。
实施例1
该实施例所得柔性透明存储器的结构如图1所示，柔性PI薄膜1，透明下电极层2和量子点掺杂TiO2复合薄膜3组成；
其中，量子点掺杂TiO2复合薄膜3丝网印刷于透明下电极层表面，透明下电极层2和透明上电极层分别喷墨印刷于两片柔性PI薄膜1表面。
构成透明电极材料为柔性PI薄膜上喷墨印刷纳米银导电墨水形成一系列直径为50-200μm、宽度为5-15μm的互相重叠的环状结构，室温干燥后，在150℃烧结100min后，冷却至室温，切成所需电极形状。
在透明下电极表面丝网印刷量子点掺杂的TiO2复合薄膜，量子点掺杂的TiO2复合薄膜为空穴-电子分离型半导体薄膜是器件实现阻变存储特性的关键。首先制备量子点掺杂的TiO2丝印胶体：配置三种溶液⑴取16.0克锐钛矿型二氧化钛粉末、0.5克水溶性CdS量子点和2.5克水溶性ZrO2量子点，加入二次蒸馏水定容至100ml。⑵取16.0克锐钛矿型二氧化钛粉末加入正丁醇溶液定容至100ml。⑶含纤维素乙醚20％的正丁醇溶液50ml。将上述三种溶液充分混合后，添加0.15％聚醚改性聚硅氧烷聚合物(HR-6105流平剂)调节其印刷适性制备出TiO2丝印胶体。
将透明下电极置于丝网印刷机上，当网版目数为250目，网版与透明下电极层的距离为2.5mm，刮刀角度为60°时进行印刷，在透明下电极表面获得量子点掺杂TiO2复合薄膜，将丝网印刷量子点掺杂TiO2复合薄膜的透明下电极层室温干燥并在240℃时烧结180min，形成透明储存层。将透明上电极层与表面喷墨印刷量子点掺杂TiO2复合薄膜3的透明下电极层2采用PDMS进行封装，制备出用于光信息存储的柔性透明存储器。
所述的量子点掺杂TiO2复合薄膜是一种空穴-电子分离型半导体薄膜，电子跃迁需要的光子能量小，量子点掺杂TiO2复合薄膜作为透明存储层使得激发发生红移，可见光作用下也能够发生空穴-电子分离。在可见光作用下，量子点掺杂TiO2复合薄膜发生高阻态到低阻态的转变，把高阻值定义为“1”、低阻值定义为“0”，可以如同计算机二进制的方式来进行存储。阻值在不同波长和光强的光信号下进行切换，实现光信号存储。
以上介绍仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (10)
1.一种用于光信息存储的柔性透明存储器，其特征在于，包括透明上电极层、透明下电极层以及位于二者之间的透明存储层；所述的透明存储层为量子点掺杂TiO2复合薄膜；所述的透明上电极层和透明下电极层为柔性PI基底上喷墨打印纳米金属导电墨水而成。
2.根据权利要求1所述的用于光信息存储的柔性透明存储器，其特征在于，所述的柔性基底为5-250μm厚的柔性PI薄膜。
3.根据权利要求1所述的用于光信息存储的柔性透明存储器，其特征在于，所述的透明上电极层和透明下电极层为在柔性PI基底上喷墨打印纳米金属导电墨水形成的一系列直径为50-200μm、宽度为5-15μm的互相重叠的环状结构透明电极层。
4.根据权利要求1所述的用于光信息存储的柔性透明存储器，其特征在于，所述的量子点掺杂TiO2复合薄膜的厚度为100nm-400nm；所述的量子点掺杂TiO2复合薄膜中量子点质量百分数为0.2％-3％。
5.根据权利要求4所述的量子点为硅量子点、锗量子点、硫化镉量子点、硒化镉量子点、碲化镉量子点、硒化锌量子点和氧化锆量子点中的至少一种。
6.根据权利要求1所述的用于光信息存储的柔性透明存储器，其特征在于，所述的量子点掺杂TiO2复合薄膜为光生电子-空穴对分离型半导体光电薄膜，量子点掺杂TiO2复合薄膜形成时，量子点跟TiO2的能带匹配，产生的光生电子进入TiO2的导带，同时也使得电子和空穴分离。
7.根据权利要求1所述的用于光信息存储的柔性透明存储器，其特征在于，所述的量子点掺杂TiO2复合薄膜丝网印刷于透明下电极层表面。
8.根据权利要求7所述的用于光信息存储的柔性透明存储器，其特征在于，所述的表面丝网印刷量子点掺杂TiO2复合薄膜的透明下电极层与透明上电极层采用PDMS封装。
9.一种用于光信息存储的柔性透明存储器的制备方法，其特征在于，包括如下步骤：
(1)在柔性PI薄膜基底上喷墨打印纳米银导电墨水或纳米铜导电墨水形成墨滴，在室温干燥过程中墨滴边缘溶剂挥发比墨滴内部快，使得银纳米颗粒或铜纳米颗粒不断向墨滴边缘积累形成环状结构；对所述的柔性PI薄膜基底上喷墨打印制备的环状结构进行烧结后得到透明上电极层和透明下电极层；
(2)将透明下电极层置于丝网印刷机上，当尼龙网版目数为200-250目，尼龙网版与透明下电极层距离为2-3mm，刮刀角度为45-60°时进行印刷，在透明下电极表面获得量子点掺杂TiO2复合薄膜，将丝网印刷后的透明下电极层室温干燥并烧结。
所述步骤(1)烧结后的透明上电极层和透明下电极层的一系列互相重叠的环状结构直径为50-200μm、宽度为5-15μm；所述步骤(2)烧结温度为200-250℃，烧结时间为60-200min。
10.根据权利要求9所述的用于光信息存储的柔性透明存储器的制备方法，其特征在于，所述的步骤(1)的柔性PI薄膜基底上喷墨打印制备的一系列互相重叠的环状结构进行烧结，烧结温度为100-200℃，烧结时间为5-50min。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802035A (zh) * | 2019-01-24 | 2019-05-24 | 北京印刷学院 | 一种基于忆阻器的神经突触仿生器件及制备方法 |
| CN110165056A (zh) * | 2019-04-12 | 2019-08-23 | 西交利物浦大学 | 一种ctm存储器及其制备方法 |
| CN111839532A (zh) * | 2020-07-14 | 2020-10-30 | 天津大学 | 一种基于导电水凝胶的柔性表皮电化学生物传感器 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102071396A (zh) * | 2011-01-19 | 2011-05-25 | 天津大学 | 锗量子点掺杂纳米二氧化钛复合薄膜的制备方法 |
| US20140264271A1 (en) * | 2013-03-18 | 2014-09-18 | National Applied Research Laboratories | Ferroelectric memory device |
| CN104701454A (zh) * | 2015-02-06 | 2015-06-10 | 北京大学 | 一种三维交叉阵列透明阻变存储器及其制备方法 |
| CN105957963A (zh) * | 2016-06-29 | 2016-09-21 | 北京印刷学院 | 一种基于pet薄膜的模拟型纳米线阵列忆阻器及制备方法 |
| CN107256925A (zh) * | 2017-06-13 | 2017-10-17 | 东北师范大学 | 一种基于氧化石墨烯的高稳定性阻变存储器 |
-
2018
- 2018-08-21 CN CN201810954380.0A patent/CN109215687B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102071396A (zh) * | 2011-01-19 | 2011-05-25 | 天津大学 | 锗量子点掺杂纳米二氧化钛复合薄膜的制备方法 |
| US20140264271A1 (en) * | 2013-03-18 | 2014-09-18 | National Applied Research Laboratories | Ferroelectric memory device |
| CN104701454A (zh) * | 2015-02-06 | 2015-06-10 | 北京大学 | 一种三维交叉阵列透明阻变存储器及其制备方法 |
| CN105957963A (zh) * | 2016-06-29 | 2016-09-21 | 北京印刷学院 | 一种基于pet薄膜的模拟型纳米线阵列忆阻器及制备方法 |
| CN107256925A (zh) * | 2017-06-13 | 2017-10-17 | 东北师范大学 | 一种基于氧化石墨烯的高稳定性阻变存储器 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802035A (zh) * | 2019-01-24 | 2019-05-24 | 北京印刷学院 | 一种基于忆阻器的神经突触仿生器件及制备方法 |
| CN110165056A (zh) * | 2019-04-12 | 2019-08-23 | 西交利物浦大学 | 一种ctm存储器及其制备方法 |
| CN111839532A (zh) * | 2020-07-14 | 2020-10-30 | 天津大学 | 一种基于导电水凝胶的柔性表皮电化学生物传感器 |
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