CN109194890A - Image sensor pixel circuit and its working method - Google Patents
Image sensor pixel circuit and its working method Download PDFInfo
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- CN109194890A CN109194890A CN201811286238.XA CN201811286238A CN109194890A CN 109194890 A CN109194890 A CN 109194890A CN 201811286238 A CN201811286238 A CN 201811286238A CN 109194890 A CN109194890 A CN 109194890A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
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- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of image sensor pixel circuit and its working method, circuit include: photodiode；The source level of transmission transistor is connected respectively photodiode and connects with drain electrode spreads point with the first floating；First extra transistor, the source electrode and drain electrode of the first extra transistor is connected respectively the first floating diffusion point and the second floating spreads point；Reset transistor, the drain electrode of reset transistor is connected respectively power supply line and connects with source level spreads point with the second floating；The capacitor of point connection is spread with the second floating；Second extra transistor, the drain electrode of second extra transistor and source level are connected respectively power supply line and the first floating diffusion point, second extra transistor and the first extra transistor are suitable for executing release steps alternate several times in extended exposure sequential step, and the charge of the first floating diffusion point storage is made to be transmitted to power supply line；It is adapted to read out the column sense line of the electrical potential information of the first floating diffusion point.The performance of described image sensor pixel circuit improves.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of image sensor pixel circuit and its working methods.
Background technique
Imaging sensor is a kind of semiconductor devices for converting optical signal into electric signal.
Imaging sensor is divided into complementary metal oxide (CMOS) imaging sensor and charge-coupled device (CCD) image passes
Sensor.Wherein cmos image sensor have simple process, be easy to integrated other devices, small in size, light-weight, small power consumption and at
This low advantage.Therefore, with the development of image sensing technology, cmos image sensor replaces ccd image to pass more and more
Sensor is applied in each electronic product.Currently, cmos image sensor has been widely used for static digital camera, number is taken the photograph
Camera, medical photographic device and automobile-used photographic device etc..
However, the performance of existing imaging sensor is to be improved.
Summary of the invention
Problems solved by the invention is to provide a kind of image sensor pixel circuit and its working method, to improve image biography
The performance of sensor pixel circuit.
To solve the above problems, the present invention provides a kind of image sensor pixel circuit, comprising: described image sensor picture
Plain circuit is for carrying out main exposure sequential step and extended exposure sequential step, comprising: photodiode；Transmission transistor, institute
The source level for stating transmission transistor is connect with photodiode, and the drain electrode of the transmission transistor connects the first floating and spreads point；The
One extra transistor, the source electrode of first extra transistor connect the first floating and spread point, first extra transistor
Drain electrode the second floating of connection spreads point；The drain electrode of reset transistor, the reset transistor is connect with power supply line, and the reset is brilliant
The source level of body pipe connects the second floating and spreads point；Capacitor, the capacitor and the diffusion point connection of the second floating；Second additional transistor
Pipe, the drain electrode of the second extra transistor are connect with power supply line, the source level of the second extra transistor and the diffusion point connection of the first floating,
Second extra transistor and the first extra transistor are suitable for executing alternate several times release in extended exposure sequential step
It strides rapid, the charge of the first floating diffusion point storage is made to be transmitted to power supply line；Column sense line, the column sense line are adapted to read out
The electrical potential information of one floating diffusion point.
Optionally, second extra transistor is suitable in the conductive state in release steps, the described first additional crystalline substance
Body pipe is suitable for being in an off state in release steps.
Optionally, further includes: follow transistor, the grid of the follow transistor and the first floating diffusion point company
It connects, the drain electrode of the follow transistor is connect with power supply line；Selection transistor, the drain electrode of the selection transistor and the source
The source electrode of transistor is followed to connect, the source electrode of the selection transistor is connect with the column sense line.
Optionally, the capacitor has opposite first end and second end, first end and the diffusion point connection of the second floating, the
Two ends ground connection.
Optionally, the photodiode has positive connecting pin and an Opposite direction connection end, the forward direction connecting pin with it is described
The source level of transmission transistor connects, the Opposite direction connection end ground connection.
The present invention also provides a kind of working methods of image sensor pixel circuit, comprising: provides above-mentioned image sensing
Device pixel circuit；Carry out main exposure sequential step, in main exposure sequential step, the reset transistor, transmission transistor and
Second extra transistor is in off-state, and first extra transistor is in the conductive state；Carry out main exposure timing step
After rapid, carry out with the continuous main readout sequence step of main exposure sequential step, in main readout sequence step, described second is additional
Transistor is in an off state, and main readout sequence step includes: in the case where the first extra transistor is in an off state, described in conducting
Transmission transistor makes the charge in photodiode spread point to the first floating and carries out the first charging；After carrying out the first charging,
First extra transistor is in an off state down, and the column sense line carries out the first letter to the electrical potential information of the first floating diffusion point
Number acquisition；After carrying out the first signal data acquisition, in the case where the first extra transistor is in the conductive state, conducting transmission crystal
Pipe makes the charge in photodiode carry out second and charge the first floating diffusion point and the second floating diffusion point；Carry out second
After charging, in the case where the first extra transistor is in the conductive state, electrical potential information of the column sense line to the first floating diffusion point
Carry out the acquisition of second signal data；It is extended exposure time series step, in extended exposure sequential step, reset transistor and biography
Defeated transistor is in off-state, and extended exposure sequential step includes: that the second extra transistor and the first extra transistor are held
Row release steps alternate several times are so that the charge of the first floating diffusion point storage is transmitted to power supply line；When being extended exposure
After sequence step, carry out continuously extending readout sequence step with extended exposure sequential step, in extension readout sequence step, the
One extra transistor is in the conductive state, and transmission transistor and the second extra transistor are in an off state, and the extension is read
Sequential step includes: that the column sense line carries out third signal data acquisition to the electrical potential information of the first floating diffusion point.
Optionally, in each release steps, second extra transistor is in the conductive state, first additional transistor
Pipe is in an off state.
Optionally, in extended exposure sequential step, when the first extra transistor is in the conductive state, the second additional crystalline substance
Body pipe is in an off state.
Optionally, the termination moment acquired in initial time to the second signal data of main readout sequence step, described multiple
Bit transistor is in an off state.
Optionally, the main readout sequence step further include: before the charging of carry out first, in first additional transistor
Pipe, reset transistor and transmission transistor are in an off state down, and the column sense line believes the current potential of the first floating diffusion point
Breath carries out the first reference data acquisition；What the data and the first signal data acquisition collected according to the first reference data obtained
The difference of data obtains the first useful signal data.
Optionally, the main readout sequence step further include: after carrying out the acquisition of second signal data, carry out master reset behaviour
Make, in master reset operation, reset transistor and the first extra transistor are in the conductive state, and transmission transistor, which is in, disconnects shape
State；After carrying out master reset operation, it is in an off state in reset transistor and transmission transistor and the first extra transistor is in
Under on state, the column sense line carries out the second reference data acquisition to the electrical potential information of the first floating diffusion point；According to
The difference for the data that the data and second signal data that two reference datas collect collect obtains the second useful signal number
According to.
Optionally, the extension readout sequence step further include: after carrying out third signal data acquisition, be extended reset
Operation resets in operation in extension, and reset transistor is in the conductive state；After being extended reset operation, in reset transistor
It is in an off state down, the column sense line carries out the acquisition of third reference data to the electrical potential information of the first floating diffusion point；Root
The difference for the data that the data and third signal data acquisition collected according to third reference data obtain obtains third useful signal
Data.
Optionally, after carrying out main exposure sequential step and main readout sequence step, exposure time series step and expansion are extended
Read out sequential step.
Optionally, further includes: after carrying out main readout sequence step, and before being extended exposure time series step,
It is extended emptying step；In extension emptying step, reset transistor, the first extra transistor and transmission transistor are in and lead
Logical state, the second extra transistor are in an off state, and selection transistor is in an off state.
Optionally, further includes: before carrying out main exposure sequential step, carry out main emptying step；In main emptying step,
Reset transistor, the first extra transistor and transmission transistor are in the conductive state, and the second extra transistor is in an off state,
Selection transistor is in an off state.
Optionally, it is extended after exposure time series step and extension readout sequence step, carries out main exposure sequential step
With main readout sequence step；The main exposure sequential step and the extension readout sequence step are continuous.
Optionally, further includes: before being extended exposure time series step, be extended emptying step；It is emptied in extension
In step, reset transistor, the first extra transistor and transmission transistor are in the conductive state, and the second extra transistor is in disconnected
Open state, selection transistor are in an off state.
Compared with prior art, technical solution of the present invention has the advantage that
In the working method for the image sensor pixel circuit that technical solution of the present invention provides, main exposure timing step is being carried out
In rapid, first extra transistor is in the conductive state, therefore works as photodiode in the case where overexposure, photodiode
In light induced electron can be spilled over to by transmission transistor the first floating diffusion point and the second floating spread point.Due to being led
In exposure time series step and main readout sequence step, the second extra transistor is in an off state, therefore carries out main exposure timing
In step and main readout sequence step, the charge of the first floating diffusion point not will receive the influence of the second extra transistor, and first
The charge of floating diffusion point will not be removed.It is in an off state lower the first charging of progress in the first extra transistor, makes photoelectricity
Light induced electron in diode is transferred to the first floating diffusion point, since the full trap capacitor of the first floating diffusion point is smaller,
The data that first signal data acquisition obtains are for characterizing the information of image in the dark.Shape is in the first extra transistor
State carries out the second charging, and the second charging makes the light induced electron in photodiode be transferred to the first floating diffusion point and the second floating
Point is spread, the light induced electron from photodiode is mainly stored by the parasitic capacitance and the capacitor of the first floating diffusion point.
Since the full trap capacitor of the first floating diffusion point and the capacitor jointly is greater than the full trap capacitor of the first floating diffusion point,
In the case that photodiode exposes, the parasitic capacitance of the first floating diffusion point and the capacitor have enough capacitor spaces to store
The light induced electron generated from photodiode, therefore the brightness of image that the data that collect of second signal data can characterize is big
The brightness of image that data can characterize is obtained in the first signal data acquisition.
In extended exposure sequential step, the second extra transistor and the first extra transistor execute alternate several times release
Stride rapid so that the charge of the first floating diffusion point storage is transmitted to power supply line.It is described in the case where photodiode overexposure
Release steps make the light induced electron for being spilled over to the first floating diffusion point from photodiode be transferred to power supply line, in release steps
In time, the light induced electron overflowed from photodiode point will not be spread by the first floating and the capacitor stores.And adjacent
Release steps between, in the case where photodiode overexposure, the light induced electron in photodiode is spilled over to described first
Floating diffusion point and the second floating spread point, mainly come from light by the parasitic capacitance and capacitor storage of the first floating diffusion point
The light induced electron of electric diode.Make in extended exposure sequential step in this way, the light induced electron overflowed from photodiode
Negligible amounts, therefore, the parasitic capacitance of the first floating diffusion point and the capacitor have enough capacitor space storages from photoelectricity
The light induced electron that diode generates.The brightness of image that the data that so third signal data acquisition obtains can characterize is greater than the second letter
Number collects the brightness of image that data can characterize, and improves dynamic range in this way.To sum up, imaging sensor picture is improved
The performance of plain circuit.
Further, after due to being extended exposure time series step and extension readout sequence step, main exposure timing is carried out
Step and main readout sequence step, and the main exposure sequential step and the extension readout sequence step are continuous, therefore in phase
Under same frame per second, real exposure time corresponding to the data that the first signal data acquisition obtains is improved, so that dark in image
The loss of detail at place reduces.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of image sensor pixel circuit；
Fig. 2 is the schematic diagram of image sensor pixel circuit in one embodiment of the invention；
Fig. 3 is the flow chart of image sensor pixel circuit working method in one embodiment of the invention；
Fig. 4 is a kind of timing diagram that image sensor pixel circuit works in one embodiment of the invention；
Fig. 5 is another timing diagram that image sensor pixel circuit works in one embodiment of the invention.
Specific embodiment
As described in background, the performance for the image sensor pixel circuit that the prior art is formed is poor.
A kind of image sensor pixel circuit, referring to FIG. 1, including: photodiode；Transmission transistor, the transmission
Transistor PtxSource level connect with the positive connecting pin of the photodiode；First floating spreads point sfd, the diffusion of the first floating
Point sfd and transmission transistor PtxDrain electrode connection；Extra transistor Pss, extra transistor PssSource electrode and the first floating spread point
Sfd connection；Second floating spreads point lfd, and the second floating spreads point lfd and extra transistor PssDrain electrode connection；Reset crystal
Pipe Prst, reset transistor PrstDrain electrode connect with power supply line vdd, reset transistor PrstSource electrode and the second floating spread point
Lfd connection；Capacitor C, one end of capacitor C are connect with the second floating diffusion point lfd, and the other end of capacitor C is connect with ground wire；Source with
With transistor Psf, follow transistor PsfGrid and the first floating diffusion point sfd connect, the follow transistor Psf's
Drain electrode is connect with power supply line vdd；Row selecting transistor Psel, the row selecting transistor PselDrain electrode and the source follow crystal
Pipe PsfSource electrode connection, the row selecting transistor PselSource electrode connect with the column sense line bL.
For the image sensor pixel circuit in Fig. 1, the time of each exposed frame is identical, and when exposure use length exposure
Between, stroboscopic phenomenon is overcome in this way.
The information of dark place is first read out according to timing for the image sensor pixel circuit in Fig. 1, which is the
One data, specifically, spreading point in the first floating after the photoelectron of photodiode is transferred on the first floating diffusion point sfd
Sfd generates voltage change, and the current potential that the first floating spreads point sfd passes through row selecting transistor PselWith follow transistor PsfQuilt
It reads, obtains the first data；According to timing, the information at bright place is read, which is the second data, specifically, photodiode
Photoelectron pass through transmission transistor PtxWith extra transistor PssIt is transferred to the second floating diffusion point lfd and the diffusion of the first floating
It is corresponding from two pole of photoelectricity mainly to store the second data by the parasitic capacitance of capacitor C and the first floating diffusion point sfd by point sfd
The photoelectron of pipe generates voltage change in the first floating diffusion point sfd, and the current potential that the first floating spreads point sfd passes through row selection
Transistor PselWith follow transistor PsfIt is read, obtains the second data.By melting to the first data and the second data
It closes, obtains a picture image, the dynamic range of the picture image is higher.
Image sensor pixel circuit in Fig. 1, when the parasitism electricity of the capacitance of capacitor C and the first floating diffusion point sfd
When the ratio of appearance is 16~32, the dynamic range of described image sensor pixel circuit can reach 90dB to 100dB.
However, in practice, the size ratio of the capacitor of capacitor C and the first floating diffusion point can not get very high number
Value, reason includes: the limited area that capacitor C is occupied since capacitor C makes in one pixel, therefore capacitor C can not accomplish very
Greatly；If capacitor C and the size ratio of the capacitor of the first floating diffusion point are very big, such as reach 100, then the first data and the second number
According to transitional region signal-to-noise ratio it is too small, image quality decrease after leading to the second data and the first data fusion.
To sum up, since capacitor C and the raising of the size ratio of the capacitor of the first floating diffusion point are restricted, image
The raising of the dynamic range of sensor pixel circuits is restricted.It needs to obtain in practical application more than 120dB dynamic range
Image sensor pixel circuit, such as: when in tunnel environment, round-the-clock monitoring environment or automotive field, need superelevation dynamic
The image sensor pixel circuit of range.
On this basis, the present invention provides a kind of image sensor pixel circuit, comprising: photodiode；Transmit crystal
Pipe, the source level of the transmission transistor are connect with photodiode, and the drain electrode of the transmission transistor connects the diffusion of the first floating
Point；First extra transistor, the source electrode of the first extra transistor connect the first floating and spread point, the drain electrode of the first extra transistor
Connect the second floating diffusion point；The drain electrode of reset transistor, the reset transistor is connect with power supply line, the reset transistor
Source level connect the second floating spread point；Capacitor, the capacitor and the diffusion point connection of the second floating；Second extra transistor, the
The drain electrode of two extra transistors is connect with power supply line, the source level of the second extra transistor and the diffusion point connection of the first floating, and second
Extra transistor and the first extra transistor are suitable for executing release steps alternate several times in extended exposure sequential step, make
The charge of first floating diffusion point storage is transmitted to power supply line；Column sense line, the column sense line are adapted to read out the expansion of the first floating
The electrical potential information of scatterplot.The performance of described image sensor pixel circuit improves.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
The embodiment of the present invention provides a kind of image sensor pixel circuit, referring to FIG. 2, described image sensor pixel electricity
Road is for carrying out main exposure sequential step and extended exposure sequential step, comprising:
Photodiode 200；
The source level of transmission transistor 210, the transmission transistor 210 is connect with photodiode 200, the transmission crystal
The drain electrode of pipe 210 connects the first floating and spreads point FD1；
First extra transistor 220, the source electrode of the first extra transistor 220 connect the first floating and spread point FD1, and first is attached
The drain electrode of transistor 220 is added to connect the second floating diffusion point FD2；
The drain electrode of reset transistor 230, the reset transistor 230 is connect with power supply line L_VDD, the reset transistor
230 source level connects the second floating and spreads point FD2；
Capacitor 240, the capacitor 240 are connect with the second floating diffusion point FD2；
The drain electrode of second extra transistor 250, the second extra transistor 250 is connect with power supply line L_VDD, the second additional crystalline substance
The source level of body pipe 250 is connect with the first floating diffusion point FD1, and the second extra transistor 250 and the first extra transistor 220 are suitable for
Release steps alternate several times are executed in extended exposure sequential step, pass the charge of the first floating diffusion point FD1 storage
Transport to power supply line L_VDD；
Column sense line BL, the column sense line BL are adapted to read out the electrical potential information of the first floating diffusion point FD1.
Second extra transistor 250 is suitable in the conductive state in release steps, first extra transistor
220 are suitable for being in an off state in release steps.
The capacitor 240 has opposite first end and second end, and first end is connect with the second floating diffusion point FD2, the
Two ends ground connection.
The photodiode 200 has positive connecting pin and Opposite direction connection end, the forward direction connecting pin and the transmission
The source level of transistor 210 connects, the Opposite direction connection end ground connection.
Described image sensor pixel circuit further include: follow transistor 260, the grid of the follow transistor 260
Pole is connect with the first floating diffusion point FD1, and the drain electrode of the follow transistor 260 is connect with power supply line L_VDD；Select crystal
The drain electrode of pipe 270, the selection transistor 270 is connect with the source electrode of the follow transistor 260, the selection transistor
270 source electrode is connect with the column sense line BL.
In the present embodiment, the capacitance of capacitor 240 and the requirement of the ratio of the capacitor of the first floating diffusion point FD1 are lower,
The area that capacitor 240 occupies is smaller, and capacitor 240 is easy to production in one pixel, secondly, being conducive to effectively believe subsequent second
Image after the fusion of number and the first useful signal data, the second useful signal data and the first useful signal data fusion
Quality is preferable.
In the present embodiment, the ratio of the capacitor of the capacitance of capacitor 240 and the first floating diffusion point FD1 is 16~40, such as
16~32.
The present embodiment also provides a kind of working method of image sensor pixel circuit, referring to FIG. 3, including following step
It is rapid:
S01: provide above-mentioned image sensor pixel circuit (with reference to Fig. 2)；
S02: carrying out main exposure sequential step, in main exposure sequential step, the reset transistor 230, transmission crystal
Pipe 210 and the second extra transistor 250 are in off-state, and first extra transistor 220 is in the conductive state；
S03: after carrying out main exposure sequential step, carry out with the continuous main readout sequence step of main exposure sequential step,
In main readout sequence step, second extra transistor 250 is in an off state, and main readout sequence step includes: first
Extra transistor 220 is in an off state down, and the transmission transistor 210 is connected, and makes the charge in photodiode 200 to
One floating spreads point FD1 and carries out the first charging；After carrying out the first charging, in the case where the first extra transistor 220 is in an off state,
The column sense line BL carries out the first signal data acquisition to the electrical potential information of the first floating diffusion point FD1；Carry out the first signal
After data acquisition, in the case where the first extra transistor 220 is in the conductive state, transmission transistor 210 is connected, makes photodiode
Charge in 200 spreads point FD1 to the first floating and the second floating diffusion point FD2 carries out the second charging；After carrying out the second charging,
In the case where the first extra transistor 220 is in the conductive state, electrical potential information of the column sense line BL to the first floating diffusion point FD1
Carry out the acquisition of second signal data；
S04: being extended exposure time series step, in extended exposure sequential step, reset transistor 230 and transmission crystal
Pipe 210 is in off-state, and extended exposure sequential step includes: the second extra transistor 250 and the first extra transistor 220
Release steps alternate several times are executed so that the charge of the first floating diffusion point FD1 storage is transmitted to power supply line L_VDD；
S05: it after being extended exposure time series step, carries out continuously extending readout sequence step with extended exposure sequential step
Suddenly, in extension readout sequence step, the first extra transistor 220 is in the conductive state, and transmission transistor 210 and second adds
Transistor 250 is in an off state, and the extension readout sequence step includes: that the column sense line BL spreads point to the first floating
The electrical potential information of FD1 carries out third signal data acquisition.
A kind of timing diagram when Fig. 4 is image sensor pixel circuit work in Fig. 2.
With reference to Fig. 4, V (RSEL) is the clock signal of the grid of selection transistor 270, when V (RSEL) is high level, choosing
It is in the conductive state to select transistor 270, when V (RSEL) is low level, selection transistor 270 is in an off state.
With reference to Fig. 4, V (RST) is the clock signal of the grid of reset transistor 230, when V (RST) is high level, is resetted
Transistor 230 is in the conductive state, and when V (RST) is low level, reset transistor 230 is in an off state.
With reference to Fig. 4, V (TG) is the clock signal of the grid of transmission transistor 210, and when V (TG) is high level, transmission is brilliant
Body pipe 210 is in the conductive state, and when V (TG) is low level, transmission transistor 210 is in an off state.
With reference to Fig. 4, V (SS1) is the clock signal of the grid of the first extra transistor 220, when V (SS1) is high level,
First extra transistor 220 is in the conductive state, and when V (SS1) is low level, the first extra transistor 220, which is in, disconnects shape
State.
With reference to Fig. 4, V (SS2) is the clock signal of the grid of the second extra transistor 250, when V (SS2) is high level,
Second extra transistor 250 is in the conductive state, and when V (SS2) is low level, the second extra transistor 250, which is in, disconnects shape
State.
In the present embodiment, after carrying out main exposure sequential step and main readout sequence step, it is extended exposure time series step
With extension readout sequence step.
In the present embodiment, further includes: before carrying out main exposure sequential step, carry out main emptying step.The master empties
Step empties the charge in photodiode 200.
In main emptying step, reset transistor 230, the first extra transistor 220 and transmission transistor 210 are on
State, the second extra transistor 250 are in an off state, and selection transistor 270 is in an off state.
In main exposure sequential step, the reset transistor 230, transmission transistor 210 and the second extra transistor 250
It is in off-state, first extra transistor 220 is in the conductive state, and selection transistor 270 is in an off state.
After carrying out main exposure sequential step, main readout sequence step is carried out.In main readout sequence step, described second is attached
Transistor 250 is added to be in an off state, selection transistor 270 is in the conductive state.
The main readout sequence step includes: brilliant in first extra transistor 220, reset transistor 230 and transmission
Body pipe 210 is in an off state down, and the column sense line BL carries out the first benchmark to the electrical potential information of the first floating diffusion point FD1
Data acquisition.
At the termination moment that initial time to the first reference data of main readout sequence step acquires, the transmission transistor
210 and reset transistor 230 be constantly in off-state.
The main readout sequence step further include: after carrying out the first reference data acquisition, in the first extra transistor 220
It is in an off state down, the transmission transistor 210 is connected, the charge in photodiode 200 is made to spread point to the first floating
FD1 carries out the first charging；After carrying out the first charging, in the case where the first extra transistor 220 is in an off state, the column sense line
BL carries out the first signal data acquisition to the electrical potential information of the first floating diffusion point FD1.
In the first charging, the transmission transistor 210 is in the conductive state, and the reset transistor 230, which is in, to be disconnected
State, first extra transistor 220 are in an off state.
In the first signal data acquisition, at the first extra transistor 220, transmission transistor 210 and reset transistor 230
In off-state.
The difference for the data that the data and the first signal data acquisition collected according to the first reference data obtain obtains the
One useful signal data.
The main readout sequence step further include: after carrying out the first signal data acquisition, at the first extra transistor 220
Under on state, transmission transistor 210 is connected, charge in photodiode 200 is made to spread point FD1 and the to the first floating
Two floatings spread point FD2 and carry out the second charging；After carrying out the second charging, in the case where the first extra transistor 220 is in the conductive state,
The column sense line BL carries out the acquisition of second signal data to the electrical potential information of the first floating diffusion point FD1.
At the termination moment that initial time to the second signal data of main readout sequence step acquire, the reset transistor
230 are in an off state.
In the second charging, reset transistor 230 is in an off state, and transmission transistor 210 is in the conductive state, described
First extra transistor 220 is in the conductive state.
In the acquisition of second signal data, transmission transistor 210 is in an off state, and the first extra transistor 220 is in
On state, reset transistor 230 are in an off state.
The main readout sequence step further include: after carrying out the acquisition of second signal data, master reset operation is carried out, in master
It resets in operation, reset transistor 230 and the first extra transistor 220 are in the conductive state, and transmission transistor 210, which is in, to be disconnected
State；After carrying out master reset operation, it is in an off state in reset transistor 230 and transmission transistor 210 and first is additional brilliant
Under body pipe 220 is in the conductive state, the column sense line BL carries out the second benchmark to the electrical potential information of the first floating diffusion point FD1
Data acquisition.
The difference for the data that the data and second signal data collected according to the second reference data collect obtains the
Two useful signal data.
In the present embodiment, further includes: after carrying out main readout sequence step, and be extended exposure time series step it
Before, it is extended emptying step；In extension emptying step, reset transistor 230, the first extra transistor 220 and transmission are brilliant
Body pipe 210 is in the conductive state, and the second extra transistor 250 is in an off state, and selection transistor 270 is in an off state.
The extension emptying step empties the charge in photodiode 200.
In extended exposure sequential step, reset transistor 230, transmission transistor 210 and selection transistor 270 are in
Off-state.
The extended exposure sequential step includes: the second extra transistor 250 and the first extra transistor 220 execute it is several
Secondary alternate release steps are so that the charge of the first floating diffusion point FD1 storage is transmitted to power supply line L_VDD.Specifically, working as light
When 200 overexposure of electric diode, release steps make the electric charge transfer that the first floating diffusion point FD1 is spilled over to from photodiode 200
To power supply line L_VDD.
In each release steps, second extra transistor 250 is in the conductive state, first extra transistor
220 are in an off state.
In extended exposure sequential step, when the first extra transistor 220 is in the conductive state, the second extra transistor
250 are in an off state, at this point, flowing to the first floating diffusion point FD1 and the second floating diffusion point FD2 from photodiode 200
Electronics effectively collected.
The turn-on instant of corresponding second extra transistor 250 of the initial time of each release steps, the termination of each release steps
The disconnection moment of moment corresponding second extra transistor 250.
It should be noted that needing to turn off the first extra transistor 220 before executing release steps, avoiding remaining in
Charge in capacitor 240 is emptied；After executing release steps, the first extra transistor 220 could be opened, avoids remaining in
Charge in capacitor 240 is emptied.
After being extended exposure time series step, carry out continuously extending readout sequence step with extended exposure sequential step,
In extension readout sequence step, the first extra transistor 220 is in the conductive state, transmission transistor 210 and the second additional crystalline substance
Body pipe 250 is in an off state, and selection transistor 270 is in the conductive state.
The extension readout sequence step includes: electrical potential information of the column sense line BL to the first floating diffusion point FD1
Carry out third signal data acquisition.
In third signal data acquisition, reset transistor 230 is in an off state.
The extension readout sequence step further include: after carrying out third signal data acquisition, it is extended reset operation,
Extension resets in operation, and reset transistor 230 is in the conductive state；After being extended reset operation, at reset transistor 230
In when it is disconnected, the column sense line BL carries out the acquisition of third reference data to the electrical potential information of the first floating diffusion point FD1.
Extending termination moment of the initial time of readout sequence step to third signal data acquisition, the reset crystal
Pipe 230 is in an off state.
The difference for the data that the data and third signal data acquisition collected according to third reference data obtain obtains the
Three useful signal data.
In the present embodiment, total time T1 of main exposure sequential step and the total time T2 of extended exposure sequential step are equal.
In other embodiments, the total time of extended exposure sequential step is less than the total time of main exposure sequential step.
Time between adjacent release steps is a sub- effective exposure time.Each sub- effective exposure time it is total
With for extremely efficient time for exposure Te.
In the present embodiment, since in being extended exposure time series step, the second extra transistor 250 and first is additional brilliant
Body pipe 220 executes release steps alternate several times so that the charge of the first floating diffusion point FD1 storage is transmitted to power supply line L_
VDD, in the case where 200 overexposure of photodiode, release steps make to be spilled over to the first floating diffusion point from photodiode 200
The electric charge transfer of FD1 is to power supply line L_VDD, so that extremely efficient time for exposure Te be less than main exposure sequential step it is total when
Between T1, the brightness of image that the data that third signal data acquisition obtains can characterize be greater than second signal data collect data can
The brightness of image of characterization, improves dynamic range in this way.
In the present embodiment, the brightness of image that the data that second signal data collect can characterize is greater than the first signal data
The brightness of image that the data collected can characterize.
Third useful signal data, the second useful signal data and the first useful signal data are merged, obtain one
The complete image of frame.
In the present embodiment, the multiplying power of the first valid data and the second valid data is equal to (C1+CFD1)/CFD1.By first
When valid data and the second valid data merge, need the second valid data multiplied by (C1+CFD1)/CFD1The data that obtain afterwards with
The fusion of first valid data.Wherein, C1 is the capacitance of capacitor 240, CFD1The parasitic capacitance value of point FD1 is spread for the first floating.
In the present embodiment, the multiplying power of the second valid data and third valid data is equal to T1/Te.By the second valid data
When merging with third valid data, need to melt third valid data multiplied by the data obtained after T1/Te and the second valid data
It closes.
In the present embodiment, extended exposure sequential step includes the repeatedly effective exposure process of son, and each son effectively exposure process separates
Section is exposed sampling in different times, avoids stroboscopic phenomenon.
The embodiment of the present invention also provides another timing diagram when image sensor pixel circuit work, please refers to Fig. 5.
With reference to Fig. 5, V (RSEL1) is the clock signal of the grid of selection transistor 270, when V (RSEL1) is high level,
Selection transistor 270 is in the conductive state, and when V (RSEL1) is low level, selection transistor 270 is in an off state.
With reference to Fig. 5, V (RST1) is the clock signal of the grid of reset transistor 230, multiple when V (RST1) is high level
Bit transistor 230 is in the conductive state, and when V (RST1) is low level, reset transistor 230 is in an off state.
With reference to Fig. 5, V (TG1) is the clock signal of the grid of transmission transistor 210, when V (TG1) is high level, transmission
Transistor 210 is in the conductive state, and when V (TG1) is low level, transmission transistor 210 is in an off state.
With reference to Fig. 5, V (SS11) is the clock signal of the grid of the first extra transistor 220, when V (SS11) is high level
When, the first extra transistor 220 is in the conductive state, and when V (SS11) is low level, the first extra transistor 220 is in disconnected
Open state.
With reference to Fig. 5, V (SS22) is the clock signal of the grid of the second extra transistor 250, when V (SS22) is high level
When, the second extra transistor 250 is in the conductive state, and when V (SS22) is low level, the second extra transistor 250 is in disconnected
Open state.
The difference of the timing diagram in timing diagram and Fig. 4 in Fig. 5 is: being extended exposure time series step and extension is read
After sequential step, main exposure sequential step and main readout sequence step are carried out；The main exposure sequential step and the extension
Readout sequence step is continuous.
The timing of main exposure sequential step is consistent with the timing of main exposure sequential step in Fig. 4 in Fig. 5, main reading in Fig. 5
The timing of sequential step is consistent with the timing of readout sequence step main in Fig. 4, the timing and figure of extended exposure sequential step in Fig. 5
The timing of extended exposure sequential step is consistent in 4, is extended in the timing and Fig. 4 of readout sequence step in Fig. 5 and extends readout sequence
The timing of step is consistent, is no longer described in detail.
In the present embodiment, with reference to Fig. 5, further includes: before being extended exposure time series step, be extended and empty step
Suddenly；In extension emptying step, reset transistor 230, the first extra transistor 220 and transmission transistor 210 are on shape
State, the second extra transistor 250 are in an off state, and selection transistor 270 is in an off state.
In timing diagram in Fig. 5, after being extended exposure time series step and extension readout sequence step, led
Exposure time series step and main readout sequence step, and the main exposure sequential step and the extension readout sequence step are continuous,
Therefore under identical frame per second, real exposure time corresponding to the data that the first signal data acquisition obtains is improved, so that
The loss of detail of dark place reduces in image.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (17)
1. a kind of image sensor pixel circuit, described image sensor pixel circuit is for carrying out main exposure sequential step and expansion
Open up exposure time series step characterized by comprising
Photodiode；
The source level of transmission transistor, the transmission transistor is connect with photodiode, the drain electrode connection of the transmission transistor
First floating spreads point；
First extra transistor, first floating that the source electrode of first extra transistor connects spread point, the described first additional crystalline substance
The drain electrode of body pipe connects the second floating and spreads point；
The drain electrode of reset transistor, the reset transistor is connect with power supply line, the source level connection second of the reset transistor
Floating spreads point；
Capacitor, the capacitor and the diffusion point connection of the second floating；
The drain electrode of second extra transistor, the second extra transistor is connect with power supply line, the source level of the second extra transistor and
The diffusion point connection of one floating, second extra transistor and the first extra transistor are suitable for holding in extended exposure sequential step
Row release steps alternate several times make the charge of the first floating diffusion point storage be transmitted to power supply line；
Column sense line, the column sense line are adapted to read out the electrical potential information of the first floating diffusion point.
2. image sensor pixel circuit according to claim 1, which is characterized in that second extra transistor is suitable for
In the conductive state in release steps, first extra transistor is suitable for being in an off state in release steps.
3. image sensor pixel circuit according to claim 1, which is characterized in that further include: follow transistor, institute
The grid and the diffusion point connection of the first floating, the drain electrode of the follow transistor for stating follow transistor are connect with power supply line；
The drain electrode of selection transistor, the selection transistor is connect with the source electrode of the follow transistor, the selection transistor
Source electrode is connect with the column sense line.
4. image sensor pixel circuit according to claim 1, which is characterized in that the capacitor has opposite first
End and second end, first end and the diffusion point connection of the second floating, second end ground connection.
5. image sensor pixel circuit according to claim 1, which is characterized in that the photodiode has forward direction
Connecting pin and Opposite direction connection end, the forward direction connecting pin are connect with the source level of the transmission transistor, the Opposite direction connection termination
Ground.
6. a kind of working method of image sensor pixel circuit characterized by comprising
Image sensor pixel circuit as described in claim 1 to 5 any one is provided；
Main exposure sequential step is carried out, in main exposure sequential step, the reset transistor, transmission transistor and second are additional
Transistor is in off-state, and first extra transistor is in the conductive state；
After carrying out main exposure sequential step, carry out with the continuous main readout sequence step of main exposure sequential step, in main reading
In sequence step, second extra transistor is in an off state, and main readout sequence step includes: at the first extra transistor
In the transmission transistor when it is disconnected, is connected, so that the charge in photodiode is spread point to the first floating and carry out first
Charging；After carrying out the first charging, in the case where the first extra transistor is in an off state, the column sense line spreads the first floating
The electrical potential information of point carries out the first signal data acquisition；After carrying out the first signal data acquisition, it is in the first extra transistor
Under on state, transmission transistor is connected, the charge in photodiode is made to spread point and the diffusion of the second floating to the first floating
Point carries out the second charging；After carrying out the second charging, in the case where the first extra transistor is in the conductive state, the column sense line is to the
The electrical potential information of one floating diffusion point carries out the acquisition of second signal data；
It is extended exposure time series step, in extended exposure sequential step, reset transistor and transmission transistor are in disconnected
Open state, extended exposure sequential step include: that the second extra transistor and the first extra transistor execute alternate several times release
Stride rapid so that the charge of the first floating diffusion point storage is transmitted to power supply line；
After being extended exposure time series step, carries out continuously extending readout sequence step with extended exposure sequential step, expand
It reads out in sequential step, the first extra transistor is in the conductive state, and transmission transistor and the second extra transistor are in disconnected
Open state, the extension readout sequence step, which includes: the column sense line, carries out the to the electrical potential information of the first floating diffusion point
Three signal data acquisitions.
7. image sensor pixel circuit according to claim 6, which is characterized in that in each release steps, described
Two extra transistors are in the conductive state, and first extra transistor is in an off state.
8. image sensor pixel circuit according to claim 6, which is characterized in that in extended exposure sequential step,
When the first extra transistor is in the conductive state, the second extra transistor is in an off state.
9. image sensor pixel circuit according to claim 6, which is characterized in that in the starting of main readout sequence step
The termination moment that moment to second signal data acquire, the reset transistor are in an off state.
10. image sensor pixel circuit according to claim 6, which is characterized in that the main readout sequence step is also
It include: to be in first extra transistor, reset transistor and transmission transistor before the charging of carry out first and disconnect shape
Under state, the column sense line carries out the first reference data acquisition to the electrical potential information of the first floating diffusion point；According to the first benchmark
The difference for the data that the data and the first signal data acquisition that data collect obtain obtains the first useful signal data.
11. image sensor pixel circuit according to claim 6, which is characterized in that the main readout sequence step is also
It include: to carry out master reset operation after carrying out the acquisition of second signal data, in master reset operation, reset transistor and first
Extra transistor is in the conductive state, and transmission transistor is in an off state；After carrying out master reset operation, in reset transistor and
Transmission transistor be in an off state and the first extra transistor it is in the conductive state under, the column sense line is to the first floating
The electrical potential information of diffusion point carries out the second reference data acquisition；The data and second signal collected according to the second reference data
The difference for the data that data collect obtains the second useful signal data.
12. image sensor pixel circuit according to claim 6, which is characterized in that the extension readout sequence step
Further include: after carrying out third signal data acquisition, it is extended reset operation, is resetted in operation in extension, at reset transistor
In on state；After being extended reset operation, in the case where reset transistor is in an off state, the column sense line is floating to first
The electrical potential information of sky diffusion point carries out the acquisition of third reference data；The data and third collected according to third reference data are believed
The difference for the data that number collects obtains third useful signal data.
13. image sensor pixel circuit according to claim 6, which is characterized in that carry out main exposure sequential step and
After main readout sequence step, it is extended exposure time series step and extension readout sequence step.
14. image sensor pixel circuit according to claim 13, which is characterized in that further include: carrying out main reading
After sequential step, and before being extended exposure time series step, it is extended emptying step；In extension emptying step,
Reset transistor, the first extra transistor and transmission transistor are in the conductive state, and the second extra transistor is in an off state,
Selection transistor is in an off state.
15. image sensor pixel circuit according to claim 13, which is characterized in that further include: carrying out main exposure
Before sequential step, main emptying step is carried out；In main emptying step, reset transistor, the first extra transistor and transmission are brilliant
Body pipe is in the conductive state, and the second extra transistor is in an off state, and selection transistor is in an off state.
16. image sensor pixel circuit according to claim 6, which is characterized in that be extended exposure time series step
After extension readout sequence step, main exposure sequential step and main readout sequence step are carried out；The main exposure sequential step
It is continuous with the extension readout sequence step.
17. image sensor pixel circuit according to claim 16, which is characterized in that further include: it is exposed being extended
Before light sequential step, it is extended emptying step；Extension emptying step in, reset transistor, the first extra transistor and
Transmission transistor is in the conductive state, and the second extra transistor is in an off state, and selection transistor is in an off state.
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