CN109639990A - The signal acquisition method and signal acquisition circuit of imaging sensor - Google Patents
The signal acquisition method and signal acquisition circuit of imaging sensor Download PDFInfo
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- CN109639990A CN109639990A CN201811558374.XA CN201811558374A CN109639990A CN 109639990 A CN109639990 A CN 109639990A CN 201811558374 A CN201811558374 A CN 201811558374A CN 109639990 A CN109639990 A CN 109639990A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
Abstract
A kind of signal acquisition method and signal acquisition circuit of imaging sensor, described image sensor includes multiple pixels of array arrangement, each pixel includes a photodiode, the signal acquisition method includes: in each signal acquisition periods, signal acquisition is carried out line by line to the multiple pixel, the signal acquisition periods include at least one reset frame and at least one empties frame, wherein, in each reset frame, apply forward bias to the photodiode of collected each pixel；It is each it is described empty in frame, to the photodiode of collected each pixel apply reverse biased.The scheme provided through the invention can be while shortening signal acquisition periods, it is ensured that preferably emptying effect, and eliminate influence of the environment light to imaging.
Description
Technical field
The present invention relates to image sensor technologies field, a kind of signal acquisition method more particularly to imaging sensor and
Signal acquisition circuit.
Background technique
Imaging sensor (image sensor) is a kind of photoelectric converting function using photoelectric device, will be on photosurface
Light image is converted to the senser element with light image at the electric signal of corresponding proportion relationship.
By taking optical fingerprint sensor as an example, usually by pixel array, control line (alternatively referred to as driving line), scan line (
Can be described as signal sense line) etc. constitute.Wherein, each pixel in pixel array all has photoelectric device, to realize optical signal
To the conversion of electric signal.
The existing photoelectric device applied to imaging sensor is usually photodiode (Photo-Diode), still, due to
The influence that the multi-party factor such as environment light of environment is acquired locating for photodiode itself dark current, imaging sensor, is starting to make
Before carrying out signal acquisition with imaging sensor, can there be useless charge in each pixel.Thus, it is adopted actually carrying out signal
Before collection, need that each pixel of imaging sensor is carried out emptying processing.
Processing logic of the existing signal acquisition method when carrying out null clear operation to pixel has much room for improvement.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of more efficient signal acquisition methods, to shorten signal acquisition week
While phase, preferably emptying effect is obtained.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of signal acquisition method of imaging sensor, it is described
Imaging sensor includes multiple pixels of array arrangement, and each pixel includes a photodiode, the signal acquisition
Method includes: to carry out signal acquisition, the signal acquisition periods line by line to the multiple pixel in each signal acquisition periods
Including at least one reset frame and at least one empty frame, wherein in each reset frame, to collected each described
The photodiode of pixel applies forward bias；It is each it is described empty in frame, to the photoelectricity of collected each pixel
Diode applies reverse biased.
Optionally, in the same signal acquisition periods, different is emptied in frame, what Xiang Suoshu photodiode applied
The absolute value of reverse biased is identical or different.
Optionally, it is described at least one to empty frame include that at least one first empties frame and at least one second empties frame,
Wherein, the absolute value for emptying the reverse biased applied in frame to the photodiode each described first is greater than each
Described second empties the absolute value of the reverse biased applied in frame to the photodiode.
Optionally, in the same signal acquisition periods, it is described at least one first empty frame in timing be located at institute
State at least one second empty frame before.
Optionally, the absolute value for emptying the reverse biased applied in frame to the photodiode each described first,
To empty in frame each described second to 1 to 3 times of the absolute value of the reverse biased of photodiode application.
Optionally, the signal acquisition periods further include: signal reads frame, reads in frame in the signal, to collected
Each pixel photodiode apply reverse biased.
Optionally, it is read in frame in the signal, signal acquisition is carried out line by line to the multiple pixel, and store acquisition
The signal value of each photodiode arrived.
Optionally, the absolute value of the reverse biased applied in frame to the photodiode is read in the signal, less
In the absolute value in the reverse biased for emptying and applying in frame to the photodiode.
Optionally, described in each signal acquisition periods, the multiple pixel is carried out line by line signal acquisition include:
In each signal acquisition periods, be discarded at least one described reset frame and at least one empty it is collected each in frame
The signal value of the photodiode.
Optionally, one end of each photodiode is separately connected a switching device, each photodiode
The other end connect public electrode jointly, Xiang Suoshu photodiode applies forward bias and refers to the electricity for controlling the public electrode
Position is positive potential, and Xiang Suoshu photodiode applies reverse biased and refers to that the current potential for controlling the public electrode is negative potential.
The embodiment of the present invention also provides a kind of signal acquisition circuit of imaging sensor, and described image sensor includes: battle array
Arrange the multiple pixels arranged and multiple data lines and multi-strip scanning line, wherein in the pixel described in each column, each picture
Element connects data line described in same by a pixel switch, in the pixel described in every row, institute that each pixel is connected
State scan line described in pixel switch connection same；The signal acquisition circuit includes: scan line control unit, the scan line
Control unit is coupled with the multi-strip scanning line, in each signal acquisition periods, described in the scan line control unit control
Multiple pixels are opened line by line；Signal sensing element, the signal sensing element is coupled with the multiple data lines, in each signal
In collection period, the signal sensing element reads the electric signal for the pixel being turned on by the data line；The letter
Number Acquisition Circuit further include: bias control unit, the bias control unit are coupled with the public electrode, in each letter
In number collection period, the bias control unit is suitable for using above-mentioned signal acquisition method to collected each pixel
Photodiode applies forward bias or reverse biased.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
The embodiment of the present invention provides a kind of signal acquisition method of imaging sensor, and described image sensor includes array row
Multiple pixels of cloth, each pixel include a photodiode, and the signal acquisition method includes: to adopt in each signal
Collect in the period, signal acquisition carried out line by line to the multiple pixel, the signal acquisition periods include at least one reset frame and
At least one empties frame, wherein in each reset frame, applies to the photodiode of collected each pixel
Forward bias；It is each it is described empty in frame, to the photodiode of collected each pixel apply reverse biased.
Thereby, it is possible to while shortening signal acquisition periods, it is ensured that preferably emptying effect, and eliminate environment light at
The influence of picture.Specifically, it in the reset frame, can be equivalent to each photodiode of strong illumination, to pass through reset
Frame adjusts the original state of each photodiode unanimously, eliminates history illumination, environment light and each photodiode itself
Influence of the component variations to residual charge.Further, the electricity for ensuring that each photodiode generates in reset frame by emptying frame
Lotus can effectively be emptied.As a result, by reset frame and the cooperation for emptying frame, the image that can be improved described image sensor is adopted
Collect precision, it is ensured that the consistency of each acquired image.
Further, it is described at least one to empty frame include that at least one first empties frame and at least one second empties frame,
Wherein, the absolute value for emptying the reverse biased applied in frame to the photodiode each described first is greater than each
Described second empties the absolute value of the reverse biased applied in frame to the photodiode.Emptying frame based on first as a result, can
To accelerate to empty speed, shortens signal acquisition periods, improve the image taking speed of imaging sensor.Further, it is emptied based on second
Frame can better assure that the residual charge in photodiode is released completely.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of the signal acquisition circuit of imaging sensor of the prior art；
Fig. 2 is the schematic diagram of pixel array in Fig. 1；
Fig. 3 shows corresponding timing diagram when signal acquisition circuit is using existing signal acquisition method in Fig. 2；
Fig. 4 is a kind of timing diagram of the signal acquisition method of imaging sensor of the prior art；
Fig. 5 is a kind of flow chart of the signal acquisition method of imaging sensor of the embodiment of the present invention；
Fig. 6 corresponding timing diagram when being using signal acquisition method shown in Fig. 5；
Fig. 7 corresponding another timing diagram when being using signal acquisition method shown in Fig. 5；
Fig. 8 is a kind of schematic diagram of the signal acquisition circuit of imaging sensor of the embodiment of the present invention.
Specific embodiment
As described in the background art, processing logic of the existing signal acquisition method when carrying out null clear operation to pixel needs
It improves.
Specifically, the signal acquisition circuit 1 of imaging sensor may include pixel array 10, sweep with reference to Fig. 1 and Fig. 2
It retouches line control circuit 15 and signal reads chip 16 (Readout IC, abbreviation ROIC).Wherein, have in the pixel array 10
Multiple data lines 11 and multi-strip scanning line 12, data line 11 and scan line 12 limit the grid of array arrangement one by one, grid
Region is corresponding to have pixel 13.
Further, the pixel 13 includes at least one pixel switch 131 and at least one sensor devices 132.Its
In, the pixel switch 131 is usually thin film transistor (TFT) (Thin Film Transistor, abbreviation TFT) device, sensor devices
132, for collecting externally input optical signal and being converted into electric signal, are then store in corresponding pixel 13.With every in Fig. 2
One pixel 13 for a pixel switch 131 and a sensor devices 132 comprising being shown.
In Fig. 2, the sensor devices 132 are photodiode.The photodiode includes PIN junction amorphous silicon photoelectricity two
Pole pipe, PN junction amorphous silicon photodiodes, PIN junction low-temperature polysilicon silicon photoelectric diode, PN junction low-temperature polysilicon silicon photoelectric diode,
PIN junction organic matter photodiode or PN junction organic matter photodiode etc..
Specifically, the scan line 12 can control the opening and closing of the pixel switch 131 of every a line, the data line
The drain electrode (or source electrode) of the pixel switch 131 of the 11 each column of connection；One end of the sensor devices 132 connects the pixel switch
131 source electrode (or drain electrode), the other end of the sensor devices 132 is commonly connected to a public electrode 17.
When carrying out signal acquisition, reverse biased is applied to the sensor devices 132 by the public electrode 17.
It is described under reverse bias condition when being connected under control of the pixel switch 131 in the scan line 12 of coupling
Electric signal in sensor devices 132 can be transmitted on the data line 11 of coupling, and then be transmitted to signal reading by data line 11
Chip 16 realizes signal acquisition out.
Further, the scan line 12 is controlled by the driving circuit such as scanning line control circuit 15 of periphery, to realize picture
The unlatching line by line of plain switch 131 is read the signal that capable pixel 13 is turned in each column by signal reading chip 16.
Fig. 3 shows corresponding driver' s timing figure (driving when signal acquisition circuit is using existing signal acquisition method in Fig. 2
Timing includes the driver' s timing of scan line 12 and the driver' s timing of signal reading chip 16), (Fig. 3 is swept each scan line 12 in showing
It is not shown in FIG. 2 to retouch line 12c) timing control pixel array 10 as shown in Figure 3 is connected line by line.Wherein, the drive of scan line 12a
The dynamic time, the driving time of scan line 12b was before the driving time of scan line 12c before the driving time of scan line 12b.
And signal reads the correspondence of chip 16 and carries out signal acquisition line by line.Signal reads each channel of chip 16 and is connected on data line 11, institute
Chip 16 is read by signal with the potential value of each data line 11 to set.Public electrode potential value is public electrode in Fig. 2 in Fig. 3
The potential value applied on 17.When each pixel is opened, the difference of the potential value of the potential value of public electrode 17 and each data line 11 is just determined
The biased voltage value for being applied to each photodiode 132 is determined.
As shown in Fig. 2, the anode of photodiode 132 is all connected to public electrode 17, photodiode in being normally applied
132 cathode is connected respectively to each pixel switch 131.When each row pixel is opened, when the potential value of public electrode 17 is higher than
When the potential value of each data line 11, photodiode 132 is just applied positive voltage, that is, is in forward bias.When each row pixel quilt
When opening, when the potential value of public electrode 17 is lower than the potential value of each data line 11, photodiode 132 is just applied negative electricity
Pressure is in reverse biased.
In being typically designed, for facilitating chip design, circuit noise is reduced, signal reads the electricity of each input channel of chip 16
Position is in a fixed value, so that the current potential that data line 11 is arranged is in a fixed value.So just needing public by setting
The potential value of electrode 17 determines photodiode 132 is applied in each pixel bias value.That is the bias of photodiode 132
17 potential values of=public electrode-data line 11 potential value.
In practical applications, due to the electric leakage of photodiode (dark current) and the incidence of environment light, beginning to use
When imaging sensor carries out Image Acquisition, each pixel 13 can have useless charge (in such as sensor devices 132 and on electrode).
It is then desired to empty processing to each pixel 13 before acquisition signal every time.
Specifically, each signal acquisition periods of existing signal acquisition method all include: one and empty frame and a signal
Read frame.Wherein, the timing for emptying frame and signal reading frame is just the same, and the two difference is: emptying in frame, each pixel 13
Signal read after, data will not retain, directly discarding.As a result, by emptying the opening line by line of frame, the remaining of pixel 13
Signal is read, and realization empties.
Every one-row pixels 13 are exactly every one-row pixels 13 at the interval for emptying the time being opened in frame and signal reading frame
Time for exposure.As it can be seen that the beginning and end point of the time for exposure of every row pixel 13 is different, but time span is the same.
Present inventor the analysis found that, when using signal acquisition method shown in Fig. 1 to Fig. 3, if pixel 13
Interior remaining signal itself is more, and sensor devices 132 are in a saturated state, and Fig. 4 needs continuous multiple frames by taking scan line 12a as an example
It empties the charge in that a line sensor devices 132 that frame could couple scan line 12a to discharge completely, then be read again in signal
Start really to adopt graphic operation in frame.
Due to that in actual use, can not determine the power of the environment light of imaging sensor local environment.So can not be true
Surely the specific frame number of frame is emptied, the signal being also just unable to ensure in each pixel 13 can be emptied thoroughly.
If emptying the on the low side of the frame number setting of frame, it just will appear the uncertain phenomenon of residual signal in pixel 13.It is specific and
Speech, if environmental light intensity, the charge in sensor devices 132 is with regard to remaining more, if environment light is weak, in sensor devices 132
Charge with regard to remaining few.
More seriously, before starting acquisition, if some pixels 13 are by strong illumination, there are many signal residual, and
For some pixels 13 by low light irradiation, signal residual is fewer.In this case, if emptying the on the low side of frame number setting, it may appear that each
The non-uniform phenomenon of 13 residual signal of pixel, can seriously affect last image effect.
Thus, to ensure no matter the power of environment light can empty the signal in pixel 13 completely, existing one
Just need in signal acquisition periods to empty frame, such as 50 frames using more as far as possible, just can ensure that so whenever (no matter environment
Light intensity or environment light are weak) charge in sensor devices 132 can empty as far as possible, and remaining charge is all than seldom in other words.
Increase the frame number for emptying frame due to using and empty mode, causes the collection period of existing signal acquisition method whole
Body is partially long.
In order to shorten signal acquisition periods, while guaranteeing emptying effect, the embodiment of the present invention provides the letter of imaging sensor
Number acquisition method, described image sensor include multiple pixels of array arrangement, and each pixel includes two pole of photoelectricity
Pipe, the signal acquisition method includes: to carry out signal acquisition line by line to the multiple pixel in each signal acquisition periods,
The signal acquisition periods include at least one reset frame and at least one empties frame, wherein in each reset frame, to
The photodiode of collected each pixel applies forward bias；It is each it is described empty in frame, to collected every
The photodiode of one pixel applies reverse biased.
Thereby, it is possible to while shortening signal acquisition periods, it is ensured that preferably emptying effect, and eliminate environment light at
The influence of picture.Specifically, it in the reset frame, can be equivalent to each photodiode of strong illumination, to pass through reset
The original state of each photodiode is adjusted consistent (i.e. signal is than more consistent) by frame, eliminates history illumination, environment light and each
Influence of the component variations of photodiode itself to residual charge.Further, ensure that each photodiode exists by emptying frame
The charge generated in reset frame can effectively be emptied (at least a big chunk charge is emptied).As a result, by reset frame and
The cooperation for emptying frame can be improved the Image Acquisition precision of described image sensor, it is ensured that the one of each acquired image
Cause property.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 5 is a kind of flow chart of the signal acquisition method of imaging sensor of the embodiment of the present invention, and Fig. 6 is using Fig. 5
Corresponding timing diagram when shown signal acquisition method.
Specifically, described image sensor may include multiple pixels of array arrangement, and the specific structure of the pixel can
With reference to the specific descriptions in Fig. 2 about pixel 13.
In the present embodiment, the sensor devices of the pixel are photodiode.The photodiode includes PIN junction amorphous
Silicon photoelectric diode, PN junction amorphous silicon photodiodes, PIN junction low-temperature polysilicon silicon photoelectric diode, PN junction low temperature polycrystalline silicon light
Electric diode, PIN junction organic matter photodiode or PN junction organic matter photodiode etc..
Preferably, described image sensor can be optical fingerprint sensor.
More specifically, signal acquisition method described in the present embodiment may include steps of:
Step S101 carries out signal acquisition, the signal to the multiple pixel in each signal acquisition periods line by line
Collection period may include at least one reset frame and at least one empties frame, wherein the step S101 may include:
Step S1011 applies just in each reset frame to the photodiode of collected each pixel
To bias；
Step S1012, it is each it is described empty in frame, apply to the photodiode of collected each pixel anti-
To bias.
Further, the signal acquisition periods can also include: that signal reads frame.
The step S101 can also include:
Step S1013 is read in frame in the signal, is applied to the photodiode of collected each pixel anti-
To bias.
It further, may include at least one reset in each signal acquisition periods for each scan line
Frame, at least one empties frame and a signal reads frame.
In one embodiment, the absolute value of the reverse biased applied in the step S1012 can be equal to described
The absolute value of the reverse biased applied in step S1013.
As a change case, the absolute value of the reverse biased applied in the step S1012 and step S1013 can also
To be different.
In one embodiment, the step S101 can also include: and be retained in each signal acquisition periods
The signal reads the signal value of collected each photodiode in frame；Be discarded at least one described reset frame and
At least one empties the signal value of collected each photodiode in frame.That is, the step S1011 and step
Collected signal will be dropped in S1012, and collected signal will be stored in the step S1013.
In one embodiment, in conjunction with Fig. 6 and Fig. 2, by taking sensor devices 132 are photodiode as an example, each light
One end of electric diode is separately connected a switching device (i.e. Fig. 2 shows pixel switch 131), each photodiode
The other end connects public electrode 17 jointly.
Further, apply forward bias to the photodiode described in the present embodiment to refer to: controlling the common electrical
The current potential of pole 17 is positive potential, that is, being potential value V1 (V1 > 0, and V1 > data by the current potential that the public electrode 17 is arranged
The current potential of line), wherein data line can be data line 11 shown in Fig. 2, so that the current potential of the public electrode 17 is higher than data line
11 current potential, so that the bias of the photodiode is positive bias (positive voltage).
Further, apply reverse biased to the photodiode described in the present embodiment to refer to: controlling the common electrical
The current potential of pole 17 is negative position, that is, being potential value V0 (V0 < 0, and V0 < data line by the current potential that the public electrode 17 is arranged
11 current potential) so that the current potential of the public electrode 17 is lower than the current potential of data line 11, so that the photodiode
Bias is reverse bias (negative voltage).
Thereby, it is possible to while shortening signal acquisition periods, it is ensured that preferably emptying effect, and eliminate environment light at
The influence of picture.Specifically, it in the reset frame, can be equivalent to each photodiode of strong illumination, to pass through reset
Frame adjusts the original state of each photodiode unanimously, eliminates history illumination, environment light and each photodiode itself
Influence of the component variations to residual charge.Further, the electricity for ensuring that each photodiode generates in reset frame by emptying frame
Lotus can effectively be emptied (at least most of charge is emptied).As a result, by reset frame and the cooperation for emptying frame, can be improved
The Image Acquisition precision of described image sensor, it is ensured that the consistency of each acquired image.
In one embodiment, when the frame number for emptying frame is multiple, in the same signal acquisition periods, no
Same empties in frame, and the potential value V0 for the reverse biased that Xiang Suoshu photodiode applies can be identical.Preferably, each
The absolute value (| V0- data line current potential |) for emptying the reverse biased applied in frame to the photodiode, can be equal to
Signal reads the absolute value (| V0- data line current potential |) of the reverse biased applied in frame to the photodiode.
In a change case of the present embodiment, when the frame number for emptying frame is multiple, adopted in the same signal
Collect in the period, different empties in frame, and the absolute value for the reverse biased that Xiang Suoshu photodiode applies can not be identical.
Specifically, with reference to Fig. 7, it is described at least one to empty frame may include that at least one first empties frame and at least one
Second empties frame, wherein each described first empty be arranged in frame the public electrode 17 current potential be potential value V2 (V2 <
The current potential of data line 11), each described second empty be arranged in frame the public electrode 17 current potential be potential value V0 (V2 <
The current potential of V0 < data line 11).So emptying the reverse biased applied in frame to the photodiode each described first
Absolute value (| V2- data line current potential |), greater than each described second empty in frame apply to the photodiode it is anti-
To the absolute value (| V0- data line current potential |) of bias.
Pass through bigger reversed of the voltage value that applies when first empties and apply in frame than being normally carried out signal acquisition as a result,
Bias can quickly empty a large amount of charges that photodiode generates in reset frame, to further shorten signal acquisition
Period improves the image taking speed of imaging sensor.
Further, emptying frame based on second can better assure residual charge in photodiode by farthest
Release.
Further, the described first frame number for emptying frame can be to be multiple, preferably to be emptied effect in a short time
Fruit.
In one embodiment, in the same signal acquisition periods, it is described at least one first empty frame in timing
On can be located at it is described at least one second empty frame before.
In one embodiment, the reverse biased applied in frame to the photodiode is emptied each described first
Absolute value (| V2- data line current potential |), it can be to empty in frame each described second to the anti-of photodiode application
To 1 to 3 times of the absolute value (| V0- data line current potential |) of bias.Thus, described first empty frame can also become empty by force
Frame, described second, which empties frame, can empty frame similar in the prior art.
In one embodiment, the absolute of the reverse biased applied in frame to the photodiode is read in the signal
Value, no more than the absolute value in the reverse biased for emptying and applying in frame to the photodiode.
For example, the signal read frame in the photodiode apply reverse biased absolute value (| V0- number
According to line current potential |), can be equal to described second empty in frame to the photodiode apply reverse biased absolute value (|
V0- data line current potential |), less than the absolute value for emptying the reverse biased applied in frame to the photodiode described first
(| V2- data line current potential |).
Fig. 8 is a kind of schematic diagram of the signal acquisition circuit of imaging sensor of the embodiment of the present invention.
Specifically, in the signal acquisition circuit 2 of described image sensor, the specific structure of described image sensor can join
Examine the associated description in Fig. 2.
Specifically, described image sensor may include: 11 He of multiple pixels 13 and multiple data lines of array arrangement
Multi-strip scanning line 12, wherein in the pixel 13 described in each column, each pixel 13 is connected same by a pixel switch 131
Data line 11 described in item, in the pixel 13 described in every row, the pixel switch 131 that each pixel 13 is connected is connected together
One scan line 12.
Further, the signal acquisition circuit 2 may include: scan line control unit 25, the scanning line traffic control list
Member 25 is coupled with the multi-strip scanning line 12, and in each signal acquisition periods, the scan line control unit 25 controls described
Multiple pixels 13 are opened line by line.
Further, the signal acquisition circuit 2 can also include signal sensing element 26, the signal sensing element 26
It is coupled with the multiple data lines 11, in each signal acquisition periods, the signal sensing element 26 passes through the data line
11 read the signal for the pixel 13 being turned on.
Preferably, the signal sensing element 26 can read chip for signal.
Further, the signal acquisition circuit 2 can also include: bias control unit 27, the bias control unit
27 couple with the photodiode of each pixel in the multiple pixel 13 (i.e. Fig. 2 shows sensor devices 132), in each institute
It states in signal acquisition periods, the bias control unit 27 is suitable for using signal acquisition method shown in above-mentioned Fig. 5 to Fig. 7 to being adopted
The photodiode of each pixel 13 of collection applies forward bias or reverse biased.
For example, in the reset frame, the bias control unit 27 be suitable for controlling Fig. 2 shows public electrode 17 electricity
Position changes to potential value V1.
In another example emptying in frame described first, the bias control unit 27 is suitable for controlling the public electrode 17
Current potential changes to potential value V2.
For another example emptying in frame and signal reading frame described second, the bias control unit 27 is suitable for described in control
The current potential of public electrode 17 changes to potential value V0.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of signal acquisition method of imaging sensor, described image sensor includes multiple pixels of array arrangement, each
The pixel includes a photodiode, which is characterized in that the signal acquisition method includes:
In each signal acquisition periods, signal acquisition is carried out line by line to the multiple pixel, the signal acquisition periods include
At least one reset frame empties frame at least one, wherein
In each reset frame, apply forward bias to the photodiode of collected each pixel；
It is each it is described empty in frame, to the photodiode of collected each pixel apply reverse biased.
2. signal acquisition method according to claim 1, which is characterized in that in the same signal acquisition periods, no
Same empties in frame, and the absolute value for the reverse biased that Xiang Suoshu photodiode applies is identical or different.
3. signal acquisition method according to claim 2, which is characterized in that it is described at least one empty frame include at least one
A first empties frame and at least one second empties frame, wherein empties in frame each described first to the photodiode
The absolute value of the reverse biased of application empties in frame greater than each described second to the reversed inclined of photodiode application
The absolute value of pressure.
4. signal acquisition method according to claim 3, which is characterized in that in the same signal acquisition periods, institute
State at least one first empty frame be located in timing it is described at least one second empty frame before.
5. signal acquisition method according to claim 3, which is characterized in that empty in frame each described first to described
The absolute value for the reverse biased that photodiode applies applies to empty in frame each described second to the photodiode
1 to 3 times of absolute value of reverse biased.
6. signal acquisition method according to claim 1, which is characterized in that the signal acquisition periods further include:
Signal reads frame, reads in frame in the signal, applies to the photodiode of collected each pixel reversed
Bias.
7. signal acquisition method according to claim 6, which is characterized in that read in frame in the signal, to described more
A pixel carries out signal acquisition line by line, and stores the signal value of collected each photodiode.
8. signal acquisition method according to claim 6, which is characterized in that read in frame in the signal to the photoelectricity
The absolute value for the reverse biased that diode applies empties in frame no more than described to the reversed inclined of photodiode application
The absolute value of pressure.
9. signal acquisition method according to any one of claim 1 to 8, which is characterized in that described to be adopted in each signal
Collect in the period, carrying out signal acquisition line by line to the multiple pixel includes:
In each signal acquisition periods, it is discarded at least one described reset frame and at least one empties in frame and collects
Each photodiode signal value.
10. signal acquisition method according to any one of claim 1 to 8, which is characterized in that each two pole of photoelectricity
One end of pipe is separately connected a switching device, and the other end of each photodiode connects public electrode, Xiang Suoshu jointly
Photodiode applies forward bias and refers to that the current potential for controlling the public electrode is positive potential, and Xiang Suoshu photodiode applies
Reverse biased refers to that the current potential for controlling the public electrode is negative potential.
11. a kind of signal acquisition circuit of imaging sensor, described image sensor include:
The multiple pixels and multiple data lines and multi-strip scanning line of array arrangement, wherein each in the pixel described in each column
The pixel is by data line described in pixel switch connection same, in the pixel described in every row, company, each pixel institute
Scan line described in the pixel switch connection same connect；
The signal acquisition circuit includes:
Scan line control unit, the scan line control unit is coupled with the multi-strip scanning line, in each signal acquisition periods
Interior, the scan line control unit controls the multiple pixel and opens line by line；
Signal sensing element, the signal sensing element is coupled with the multiple data lines, in each signal acquisition periods, institute
State the electric signal that signal sensing element reads the pixel being turned on by the data line；
It is characterized in that, the signal acquisition circuit further include:
Bias control unit, the bias control unit are coupled with the public electrode, in each signal acquisition periods,
The bias control unit is suitable for using signal acquisition method described in any one of the claims 1 to 10 to collected every
The photodiode of one pixel applies forward bias or reverse biased.
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