CN109188811A - Array substrate and display panel - Google Patents
Array substrate and display panel Download PDFInfo
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- CN109188811A CN109188811A CN201811170291.3A CN201811170291A CN109188811A CN 109188811 A CN109188811 A CN 109188811A CN 201811170291 A CN201811170291 A CN 201811170291A CN 109188811 A CN109188811 A CN 109188811A
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- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000003491 array Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 131
- 239000000463 material Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Human Computer Interaction (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of array substrate and display panel, array substrate includes: substrate；Shading metal layer is set on the substrate；First insulating layer is set on the shading metal layer and the substrate；Semiconductor layer is set on first insulating layer；Touching signals line is set on first insulating layer；Second insulating layer is set on first insulating layer, the semiconductor layer and the touching signals line；Gate metal layer is set in the second insulating layer and is located at the shading metal layer；Third insulating layer is set in the second insulating layer and the gate metal layer；Source-drain electrode metal layer is set on the third insulating layer；4th insulating layer is set on the source-drain electrode metal layer and the third insulating layer, the touch-control common electrode layer be set on the 4th insulating layer.The present invention specifically reduces the thickness of array substrate, improves the beneficial effect of pixel aperture ratio.
Description
Technical field
The present invention relates to field of liquid crystal display, and in particular to a kind of array substrate and display panel.
Background technique
Existing embedded touch display screen is all to be internally embedded touch sensible electric furnace in display screen, so that display screen is more
It is thin.It, will be public especially for touch sensor function is embedded in the array substrate of fringe field switching mode liquid crystal display panel
Electrode patterning processing is spaced touch-control sensing electrode.Touching signals line usually formed by the one layer of metal newly increased,
Or there is electrode to be made with layer material with technique, however there is increase light shield quantity in both methods, and can reduce pixel unit
Aperture opening ratio.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The object of the present invention is to provide a kind of array substrate and display panels, have the thickness for reducing array substrate, improve
The beneficial effect of pixel aperture ratio.
The embodiment of the invention provides a kind of array substrates, comprising:
Substrate；
Shading metal layer is set on the substrate；
First insulating layer is set on the shading metal layer and the substrate；
Semiconductor layer is set on first insulating layer；
Touching signals line is set on first insulating layer；
Second insulating layer is set on first insulating layer, the semiconductor layer and the touching signals line；
Gate metal layer is set in the second insulating layer and is located at the shading metal layer；
Third insulating layer is set in the second insulating layer and the gate metal layer；
Source-drain electrode metal layer is set on the third insulating layer；
4th insulating layer is set on the source-drain electrode metal layer and the third insulating layer, the touch-control it is public
Electrode layer is set on the 4th insulating layer；
Touch-control common electrode layer, be set to above first insulating layer, the touch-control common electrode layer include more
The rectangular metal layer of a rectangular array arrangement, the multiple rectangular metal layer are electrically connected with corresponding touching signals line respectively,
The touching signals line is connect with gating switch respectively, the gating switch respectively with the signal input pin of touch chip and
Grounding pin connection, when the gating switch connects the touching signals line and grounding pin, the rectangular metal layer conduct
Public electrode；When the touching signals line is connect by the gating switch with signal input pin, the rectangular metal layer conduct
Touch-control sensing electrode；
5th insulating layer is set on the Chu Kong common electrode layer and first insulating layer；
Pixel electrode layer is set on the 5th insulating layer, which includes that multiple rectangular arrays are set
The pixel electrode set.
In array substrate described in the embodiment of the present invention, the second insulating layer, the third insulating layer and described
4th insulating layer is respectively arranged with the second metallic vias, third metallic vias and the 4th metal mistake that multiple groups are sequentially connected electrically
Hole, the touching signals line pass through the second metallic vias, third metallic vias and the 4th metallic vias and corresponding rectangle gold
Belong to layer electrical connection.
In array substrate described in the embodiment of the present invention, it is characterised in that the second metallic vias, third metallic vias with
And the 4th metallic vias coaxial arrangement.
In array substrate described in the embodiment of the present invention, connection metal layer is provided on the third insulating layer, it is described
The second metallic vias in second insulating layer passes through the connection metal layer and corresponding third metal in the third insulating layer
Via hole electrical connection.
In array substrate described in the embodiment of the present invention, the touching signals line is ITO metal wire.
In array substrate described in the embodiment of the present invention, data line and scan line are additionally provided on the substrate.
In array substrate described in the embodiment of the present invention, the touching signals line is that semiconductor mixes to be formed.
Array substrate provided by the invention and display panel by the way that touching signals line to be arranged in the same layer of semiconductor layer, and
Touch-control sensing electrode is multiplexed with using public electrode, reduces the thickness of array substrate, improves the beneficial effect of pixel aperture ratio；
And semiconductor layer and touching signals line layer are formed by using semiconductor, it is possible to reduce light shield number, it can
So that the raising electric conductivity of touching signals line.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the array substrate in the embodiment of the present invention.
Fig. 2 is another structural schematic diagram of the array substrate in the embodiment of the present invention.
Fig. 3 is a kind of circuit theory schematic diagram of the array substrate in the embodiment of the present invention.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.
" first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.?
In description of the invention, the meaning of " plurality " is two or more, unless otherwise specifically defined.
Following disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Fig. 1 is please referred to, Fig. 1 is the structural schematic diagram of the array substrate in one embodiment of the invention.The array substrate, packet
It includes: substrate 101, shading metal layer 102, touching signals line 103, the first insulating layer 104, semiconductor layer 105, second insulating layer
106, gate metal layer 107, third insulating layer 200, source-drain electrode metal layer 109, the 4th insulating layer 201, touch-control common electrode layer
203, the 5th insulating layer 202, pixel electrode layer 24.
Wherein, which is glass substrate.
Wherein, which is set on substrate 101；The opaque metal material of the shading metal layer 102 is heavy
Product is formed.The touching signals line 103 has more.
Wherein, which is set to the shading metal layer 102, more touching signals lines 103 and substrate
On 101.First insulating layer 104 is buffer layer, and the materials such as silica, silicon nitride is used to deposit to be formed.
Wherein, which is set on first insulating layer 104；The semiconductor layer 105 using deposition, from
The techniques such as son injection are formed, and are the prior art, without excessive description.
Wherein, which is set to first insulating layer 104 and is located on the same floor with the semiconductor layer 105, touching
Control signal wire 103 can use ITO metal deposit and carry out graphical treatment and obtain.Certainly, it is partly led it is possible to further use
Body injection high concentration conductive ion is formed.In specific manufacturing process layer of semiconductor can be deposited on first insulating layer 104
Then material layer is patterned processing and obtains the figure of semiconductor layer 105 and the figure of touching signals line 103, then divides
It is other the figure of semiconductor layer 105 and the figure of touching signals line 103 mix can be obtained by corresponding semiconductor layer
105 and touching signals line 103.
Wherein, which is set on the first insulating layer 104 and the semiconductor layer 105；Second insulation
Layer 106 is separation layer.It uses the materials such as silica, silicon nitride to deposit to be formed.
Wherein, which is set in the second insulating layer 106 and is located at the shading metal layer 102
Top.Gate metal layer 107 acquires metal material progress physical vapor depositing technology and light shield is made.
Wherein, which is set in the second insulating layer 106 and the gate metal layer 107；The
Three insulating layers 200 are interlayer dielectric layer.It uses the materials such as silica, silicon nitride to deposit to be formed.
Wherein, which is set on the third insulating layer 200；The source-drain electrode metal layer 109 includes
Source metal 109b and drain metal 109a, source metal are electrically connected with semiconductor layer 105.The drain metal and pixel electrode
Layer 24 is electrically connected.
Wherein, the 4th insulating layer 201 is set on the source-drain electrode metal layer 109 and the third insulating layer 200,
4th insulating layer 201 is flatness layer.The thickness of 4th insulating layer 201 is greater than the first insulating layer, second insulating layer 106, Yi Ji
The thickness of three insulating layers.4th insulating layer 201 deposits to be formed using the materials such as silica, silicon nitride.
Referring to Fig. 3, wherein the touch-control common electrode layer 203 be set on the 4th insulating layer 201.Touching
Control common electrode layer 203.Touch-control common electrode layer 203 include multiple rectangular metal layers 2031, the multiple rectangular metal layer
2031 rectangular arrays are intervally arranged, and multiple rectangular metal layers are electrically connected with corresponding touching signals line respectively, the touch-control letter
Number line 103 is connect with gating switch 60 respectively, the gating switch 60 respectively with the signal input pin of touch chip and connect
The connection of ground pin, when the gating switch connects the touching signals line and grounding pin, the rectangular metal layer is as public
Common electrode；When the touching signals line is connect by the gating switch with signal input pin, the rectangular metal layer is as touching
Control induction electrode.
Wherein, the 5th insulating layer 202 is set to the Chu Kong common electrode layer 203 and the 4th insulating layer 201
On；It uses the materials such as silica, silicon nitride to deposit to be formed.
Wherein, which is set on the 5th insulating layer 202.The pixel electrode layer 24 includes multiple pictures
Plain electrode.
Specifically, the second insulating layer 106, the third insulating layer 200 and the 4th insulating layer 201 difference
It is provided with the second metallic vias c, third metallic vias b and the 4th metallic vias a that multiple groups are sequentially connected electrically, the touch-control letter
Number line 103 passes through the second metallic vias c, third metallic vias b and the 4th metallic vias a and corresponding rectangular metal layer
Electrical connection.
In the embodiment shown in fig. 1, second metallic vias c, third metallic vias b and the 4th metallic vias a according to
Secondary face and coaxial arrangement, the second metallic vias c, third metallic vias b and the 4th metallic vias a are successively contacted and are electrically connected
It connects.
In some embodiments, referring to figure 2., connection metal layer 301 is provided on the third insulating layer 200, it is described
The second metallic vias c in second insulating layer 106 is corresponding with the third insulating layer 200 by the connection metal layer 301
Third metallic vias b electrical connection.Connection metal layer 301 is used to reduce the depth of via hole, connects touch-control for touch-control sensing electrode
Signal wire 103 provides convenience.
In some embodiments, shading metal layer 102 and more touching signals lines 103 are dielectrically separated from setting.It that is to say touching
Control signal wire 103 can get around the shading metal layer 102 in wiring.
In some embodiments, shading metal layer 102 is electrically connected with part touching signals line 103.When that is to say wiring, hide
Light metal layer 102 can be with a part of touching signals line 103.In this case, the metallic vias in first insulating layer 104
It is connected with the shading metal layer 102, the aperture opening ratio of pixel can be improved in this way.
The present invention also provides a kind of display panels, including above-mentioned array substrate.
Array substrate provided by the invention and display panel by the way that touching signals line to be arranged in the same layer of shading metal layer,
And touch-control sensing electrode is multiplexed with using public electrode, light shield quantity is reduced to have, improves the beneficial effect of pixel aperture ratio
Fruit.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the invention.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (8)
1. a kind of array substrate characterized by comprising
Substrate；
Shading metal layer is set on the substrate；
First insulating layer is set on the shading metal layer and the substrate；
Semiconductor layer is set on first insulating layer；
Touching signals line is set on first insulating layer；
Second insulating layer is set on first insulating layer, the semiconductor layer and the touching signals line；
Gate metal layer is set in the second insulating layer and is located at the shading metal layer；
Third insulating layer is set in the second insulating layer and the gate metal layer；
Source-drain electrode metal layer is set on the third insulating layer；
4th insulating layer is set on the source-drain electrode metal layer and the third insulating layer, the touch-control public electrode
Layer is set on the 4th insulating layer；
Touch-control common electrode layer, be set to above first insulating layer, the touch-control common electrode layer to include multiple be in
The rectangular metal layer of rectangular array arrangement, the multiple rectangular metal layer is electrically connected with corresponding touching signals line respectively, described
Touching signals line is connect with gating switch respectively, the gating switch respectively with the signal input pin of touch chip and ground connection
Pin connection, when the gating switch connects the touching signals line and grounding pin, the rectangular metal layer is as public
Electrode；When the touching signals line is connect by the gating switch with signal input pin, the rectangular metal layer is as touch-control
Induction electrode；
5th insulating layer is set on the Chu Kong common electrode layer and first insulating layer；
Pixel electrode layer is set on the 5th insulating layer, which includes what multiple rectangular arrays were arranged
Pixel electrode.
2. array substrate according to claim 1, which is characterized in that the second insulating layer, the third insulating layer with
And the 4th insulating layer is respectively arranged with the second metallic vias, third metallic vias and the 4th gold medal that multiple groups are sequentially connected electrically
Belong to via hole, the touching signals line passes through the second metallic vias, third metallic vias and the 4th metallic vias and corresponding square
The electrical connection of shape metal layer.
3. array substrate according to claim 2, it is characterised in that the second metallic vias, third metallic vias and the 4th
Metallic vias coaxial arrangement.
4. array substrate according to claim 3, which is characterized in that be provided with connection metal on the third insulating layer
Layer, the second metallic vias in the second insulating layer pass through the connection metal layer corresponding with the third insulating layer the
The electrical connection of three metallic vias.
5. array substrate according to claim 1, which is characterized in that the touching signals line is ITO metal wire.
6. array substrate according to claim 1, which is characterized in that be additionally provided with data line and scanning on the substrate
Line.
7. array substrate according to claim 1, which is characterized in that the touching signals line is that semiconductor mixes to be formed.
8. a kind of display panel, which is characterized in that including the described in any item array substrates of claim 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811170291.3A CN109188811A (en) | 2018-10-09 | 2018-10-09 | Array substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811170291.3A CN109188811A (en) | 2018-10-09 | 2018-10-09 | Array substrate and display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109188811A true CN109188811A (en) | 2019-01-11 |
Family
ID=64947011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811170291.3A Withdrawn CN109188811A (en) | 2018-10-09 | 2018-10-09 | Array substrate and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109188811A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112002709A (en) * | 2020-08-11 | 2020-11-27 | 武汉华星光电半导体显示技术有限公司 | Array substrate, array substrate manufacturing method and display panel |
| CN112198729A (en) * | 2020-10-28 | 2021-01-08 | 武汉华星光电技术有限公司 | Array substrate, display panel and electronic equipment |
| CN114188389A (en) * | 2021-12-09 | 2022-03-15 | 深圳市华星光电半导体显示技术有限公司 | TFT array substrate, manufacturing method thereof and OLED display panel |
-
2018
- 2018-10-09 CN CN201811170291.3A patent/CN109188811A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112002709A (en) * | 2020-08-11 | 2020-11-27 | 武汉华星光电半导体显示技术有限公司 | Array substrate, array substrate manufacturing method and display panel |
| CN112002709B (en) * | 2020-08-11 | 2022-09-27 | 武汉华星光电半导体显示技术有限公司 | Array substrate, array substrate manufacturing method and display panel |
| CN112198729A (en) * | 2020-10-28 | 2021-01-08 | 武汉华星光电技术有限公司 | Array substrate, display panel and electronic equipment |
| CN112198729B (en) * | 2020-10-28 | 2022-04-26 | 武汉华星光电技术有限公司 | Array substrate, display panel and electronic equipment |
| WO2022088326A1 (en) * | 2020-10-28 | 2022-05-05 | 武汉华星光电技术有限公司 | Array substrate, display panel and electronic device |
| CN114188389A (en) * | 2021-12-09 | 2022-03-15 | 深圳市华星光电半导体显示技术有限公司 | TFT array substrate, manufacturing method thereof and OLED display panel |
| CN114188389B (en) * | 2021-12-09 | 2024-02-23 | 深圳市华星光电半导体显示技术有限公司 | TFT array substrate, manufacturing method thereof and OLED display panel |
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Application publication date: 20190111 |