CN109187674B - Nondestructive testing method for quality of inner wall of through hole with micron hole - Google Patents
Nondestructive testing method for quality of inner wall of through hole with micron hole Download PDFInfo
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- CN109187674B CN109187674B CN201810784210.2A CN201810784210A CN109187674B CN 109187674 B CN109187674 B CN 109187674B CN 201810784210 A CN201810784210 A CN 201810784210A CN 109187674 B CN109187674 B CN 109187674B
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Abstract
The invention relates to a nondestructive testing method for the quality of the inner wall of a micron hole through hole, in particular to a nondestructive testing method for the quality of the inner wall of a micron hole through hole. Fixing the micropore sample piece to be detected in the middle of an electrolytic cell filled with electrolyte solution, dividing the electrolyte solution in the electrolytic cell into two parts by the micropore sample piece, and only realizing the intercommunication of the electrolyte solution from the through hole of the micropore sample piece. And then inserting positive and negative electrodes of a direct current power supply into the solutions on the two sides of the micropore sample piece respectively, and forming an ion current path between the two electrodes through the micropore after applying voltage. The probe in the electrolytic cell is clamped on the propelling device through the clamping device, the probe is propelled to enter the micron hole through the propelling device, and the condition that the current changes when the probe enters the micron hole is detected, so that the quality of the inner wall of the micron hole is detected. According to the invention, the current signal is analyzed to realize rapid and effective nondestructive detection on the quality of the inner wall of the micron-hole through hole according to the detected change of the blocking current signal, thereby ensuring the quality control in the production process of products.
Description
Technical Field
The invention relates to a method for detecting the wall of a micropore hole, in particular to a method for nondestructively detecting the quality of the inner wall of a micropore through hole.
Background
With the rapid development of the electronic industry, the electronic technology is developed to large scale, high integration and refinement, the electronic equipment is more and more complex, the holes in the electronic products and equipment are also continuously developed to the micro-size range or even the nano-size range, and the quality of the refined processing of the micro-holes directly affects the quality and the cost of the electronic products.
At present, no quick and effective detection means aiming at the pore quality (including the aspects of pore wall roughness, pore wall pore integrity, pore thickness and the like) of the inner wall of the micron through hole exists. The existing detection method for the micron hole is based on an optical principle, and the methods can only detect the place where direct light can reach, so that the properties such as the shape, the diameter, the position and the like of the hole can only be detected, but effective detection can not be carried out on defects of the inner wall of the hole (such as the problems that the inner wall of the hole has fine burrs, the inner wall of the hole has threads, depressions and the like), and the defects directly influence the subsequent processing quality and the finished product quality of a product. For example, in the quality detection of the inner wall of the through hole of the PCB micron hole, the PCB section analysis technology can directly observe the appearance of the hole and the material structure in the board under a microscope, but the production board needs to be damaged when the section is manufactured, the manufacturing procedures are multiple, the time is long, the production efficiency is influenced, and the production input cost is increased.
Disclosure of Invention
The invention provides a nondestructive testing method for the quality of the inner wall of the through hole with the micron holes, aiming at overcoming at least one defect in the prior art, and effectively realizing the nondestructive testing of the quality of the inner wall of the through hole.
In order to solve the technical problems, the invention adopts the technical scheme that: a nondestructive testing method for the quality of the inner wall of a through hole of a micron hole comprises the following steps:
s1, obtaining a micropore sample piece to be detected;
s2, preparing a detection device:
s21, fixing the micron-pore sample piece to be detected in the middle of an electrolytic cell, and injecting an electrolyte solution into the electrolytic cell; the micron-hole sample piece divides the electrolyte solution in the electrolytic cell into two parts, and the electrolyte solutions of the two parts can only realize intercommunication through the through hole of the micron-hole sample piece;
s22, inserting positive and negative electrodes of a direct-current power supply into electrolyte solutions on two sides of the micropore sample piece respectively; the electrode is connected with a direct current power supply and a current detector outside the electrolytic cell in series; when a direct current power supply applies voltage, an ion current path is formed between the positive electrode and the negative electrode through the micron hole;
s23, arranging a propelling device in the electrolytic cell, clamping a probe on the propelling device, and propelling the probe along the central axis direction of the micron hole to be detected and penetrating through the micron hole to be detected when the propelling device is pushed;
s3, pushing the pushing device to push the probe to be pushed along the central axis direction of the micron hole to be tested, and recording the change of the blocking current when the probe enters the micron hole to be tested; the magnitude of the blocking current and the length position of the probe in the hole form a current-position curve, when the micron hole through hole is an ideal cylindrical hole, the magnitude of the blocking current and the length position of the probe in the hole form a linear relation, and the slope of the current-position curve is a constant C; when the through hole of the micron hole is sunken, the descending speed of the blocking current of the corresponding probe at the length position in the hole is slowed down, then the linear relation is recovered, and the slope of the current-position curve is increased firstly and then reduced to the constant C; when the through hole of the micron hole is provided with the bulge, the descending speed of the blocking current of the corresponding probe at the length position in the hole is accelerated, then the linear relation is recovered, and the slope of the current-position curve is firstly reduced and then ascends to increase to the constant C;
and S4, converting the change of the blocking current signal into the morphology of the wall of the to-be-detected micro-hole, and performing quality analysis and detection.
Further, the micron holes are through holes.
Furthermore, the probe is made of an insulating material. The insulating material prevents the probe and the solution from electrochemically reacting to become a conductor in the ion current path, such as a metal conductor, which affects the accuracy of current detection.
Preferably, the diameter value of the probe is 10 to 70% of the diameter value of the micropore. Setting the diameter of the micro-hole to 10% -70% can prevent the probe from contacting with the hole, damaging the hole and influencing current detection
Preferably, the length value of the probe is 110% to 300% of the length value of the nanopore. The probe length is longer than the micron pore length for complete detection of the micron pores.
Further, the electrode is a graphene electrode, Cu and alloy with low resistivity thereof, and Ag and alloy with low resistivity thereof.
Compared with the prior art, the beneficial effects are: according to the nondestructive testing method for the quality of the inner wall of the micron hole through hole, the change of the detected blocking current signal when the probe passes through the hole is caused by the change of the shape of the inner wall of the micron hole through hole, the quality of the inner wall of the micron hole through hole is simply, quickly, effectively and nondestructively tested by analyzing the current signal, and the quality control in the production process of a product is guaranteed.
Drawings
FIG. 1 is a schematic view of the structure of the detecting device of the present invention.
Fig. 2 is a partial enlarged view of a through hole of a sample to be tested and a diagram of a blocking current signal according to the present invention, wherein the probe is located at an inlet at the left end of the through hole of the sample.
FIG. 3 is a partial enlarged view of a through hole of a sample to be tested and a diagram of a blocking current signal according to the present invention, wherein the probe is located at a recess on an inner wall of the through hole of the sample.
FIG. 4 is a partial enlarged view of a through hole of a sample to be tested and a diagram of a blocking current signal, wherein the probe is located at a bulge on the inner wall of the through hole of the sample.
FIG. 5 is a partial enlarged view of a through hole of a sample to be tested and a diagram of a blocking current signal according to the present invention, wherein the probe is located at an outlet at the right end of the through hole of the sample.
Detailed Description
The drawings are for illustration purposes only and are not to be construed as limiting the invention; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the invention.
Example 1:
as shown in FIG. 1, a nondestructive testing method for the quality of the inner wall of a through hole of a micron hole comprises the following steps:
s1, obtaining a micron-hole sample to be tested, wherein the micron hole is a through hole, and the micron-hole sample to be tested is a product with requirements on hole quality, and can be a PCB (printed Circuit Board) and the like; in this embodiment, the micropore sample to be measured is a PCB, the diameter of the PCB micropore is 100 μm, and the length of the PCB micropore is 1600 μm.
S2, preparing a detection device:
s21, fixing the micron-pore sample piece to be detected in the middle of an electrolytic cell, and injecting an electrolyte solution into the electrolytic cell; the micron-hole sample piece divides the electrolyte solution in the electrolytic cell into two parts, and the electrolyte solutions of the two parts can only realize intercommunication through the through hole of the micron-hole sample piece; in the present embodiment, the electrolyte solution is a NaCl solution;
s22, inserting positive and negative electrodes of a direct-current power supply into electrolyte solutions on two sides of the micropore sample piece respectively; the electrode is connected with a direct current power supply and a current detector outside the electrolytic cell in series; when a direct current power supply applies voltage, an ion current path is formed between the positive electrode and the negative electrode through the micron hole; the electrode is a graphene electrode, Cu and alloy with low resistivity thereof, Ag and alloy with low resistivity thereof; in the present embodiment, both the positive electrode and the negative electrode are Ag; the current detector is a patch clamp amplifier, and the voltage of the direct current power supply is 5V;
s23, arranging a propelling device in the electrolytic cell, clamping a probe on the propelling device through a clamping device, and propelling the probe along the central axis direction of the micron hole to be detected and penetrating through the micron hole to be detected when the propelling device is pushed; wherein, the probe is made of insulating materials, such as Teflon, organic glass and the like; the diameter value of the probe is 10-70% of the diameter value of the micropore; the probe length value is 110-200% of the micron pore length value; in this example, the probe is Teflon, the diameter of the probe has a value of 50 μm and the length has a value of 1800 μm.
S3, pushing the pushing device to push the probe to be pushed along the central axis direction of the micron hole to be tested, and recording the change of the blocking current when the probe enters the micron hole to be tested, as shown in the figures 2 to 5; the magnitude of the blocking current and the length position of the probe in the hole form a current-position curve, when the micron hole through hole is an ideal cylindrical hole, the magnitude of the blocking current and the length position of the probe in the hole form a linear relation, and the slope of the current-position curve is a constant C; when the through hole of the micron hole is sunken, the descending speed of the blocking current of the corresponding probe at the length position in the hole is slowed down, then the linear relation is recovered, and the slope of the current-position curve is increased firstly and then reduced to the constant C; when the through hole of the micron hole is provided with the bulge, the descending speed of the blocking current of the corresponding probe at the length position in the hole is accelerated, then the linear relation is recovered, and the slope of the current-position curve is firstly reduced and then ascends to increase to the constant C.
And S4, converting the change of the blocking current signal into the morphology of the wall of the to-be-detected micro-hole, and performing quality analysis and detection. The specific calculation method comprises the following steps:
1. according to conductance formula of micron hole through holeWherein the conductance isI is the detected current, U is the DC power supply voltage, and σ is the electrolyte solutionD is the diameter of the pore and l is the length of the pore.
2. Conductance when probe does not enter micro-hole viad0Theoretical diameter of the micro-hole through-hole, /)0Is the length of the through hole of the micron hole;
3. after the probe enters the through-hole of the micro-hole, as shown in FIG. 3, the through-hole of the micro-hole is divided into 3 parts with respective lengths of l1、l2、l3The corresponding resistance is R1、R2、R3And alsoThenHas a probe portion conductance ofdtzIs the probe diameter; when the probe enters the through hole of the micron hole, a blocking current is generated, which corresponds to the starting point a (x) of the current-position diagram0,I0);
4. Simultaneous:
the available function f (x, I, d) is 0, Δ l approaches infinity, and the diameter d at each position x of the micro-hole through hole is obtained by solving.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (6)
1. A nondestructive testing method for the quality of the inner wall of a through hole of a micron hole is characterized by comprising the following steps:
s1, obtaining a micropore sample piece to be measured;
s2, preparing a detection device:
s21, fixing the micron-pore sample piece to be detected in the middle of an electrolytic cell, and injecting an electrolyte solution into the electrolytic cell; the micron-hole sample piece divides the electrolyte solution in the electrolytic cell into two parts, and the electrolyte solutions of the two parts can only realize intercommunication through the through hole of the micron-hole sample piece;
s22, inserting positive and negative electrodes of a direct current power supply into the electrolyte solution on two sides of the micropore sample piece respectively; the electrode is connected with a direct current power supply and a current detector outside the electrolytic cell in series; when a direct current power supply applies voltage, an ion current path is formed between the positive electrode and the negative electrode through the micron hole;
s23, arranging a propelling device in the electrolytic cell, clamping a probe on the propelling device through a clamping device, and when the propelling device is pushed, pushing the probe to penetrate through the micron hole to be detected along the central axis direction of the micron hole to be detected;
s3, pushing the pushing device to push the probe along the central axis direction of the micron hole to be tested, and recording the change of the blocking current when the probe enters the micron hole to be tested;
and S4, converting the change of the blocking current signal into the morphology of the wall of the micropore to be detected, and performing quality analysis and detection.
2. The method of claim 1, wherein the micropores are through holes.
3. The method of claim 1, wherein the probe is made of an insulating material.
4. The method of claim 3, wherein the diameter of the probe is 10% to 70% of the diameter of the micropore.
5. The method of claim 4, wherein the length of the probe is 110% to 300% of the length of the micropore.
6. The method as claimed in any one of claims 1 to 5, wherein the electrodes are graphene electrodes, Cu and its low resistivity alloy, Ag and its low resistivity alloy.
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Citations (5)
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CN101082602A (en) * | 2007-07-16 | 2007-12-05 | 北京交通大学 | Method for measuring material acoustics non-linear coefficient using rayleigh surface wave |
CN102899243A (en) * | 2012-09-21 | 2013-01-30 | 清华大学 | Graphene nanopore-microcavity-solid-state nanopore structure based DNA sequencing device and method |
CN103575748A (en) * | 2013-11-15 | 2014-02-12 | 上海交通大学 | System for optical detection on micro-aperture workpiece inner wall |
CN103673880A (en) * | 2013-12-06 | 2014-03-26 | 上海新跃仪表厂 | Micro-hole inner wall vision inspection system based on composite reflector and inspection method of system |
CN105548261A (en) * | 2015-12-04 | 2016-05-04 | 华东理工大学 | Telomere length detecting method based on biological nano channel of aerolysin |
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JP5768055B2 (en) * | 2010-09-30 | 2015-08-26 | 株式会社フジクラ | Substrate |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101082602A (en) * | 2007-07-16 | 2007-12-05 | 北京交通大学 | Method for measuring material acoustics non-linear coefficient using rayleigh surface wave |
CN102899243A (en) * | 2012-09-21 | 2013-01-30 | 清华大学 | Graphene nanopore-microcavity-solid-state nanopore structure based DNA sequencing device and method |
CN103575748A (en) * | 2013-11-15 | 2014-02-12 | 上海交通大学 | System for optical detection on micro-aperture workpiece inner wall |
CN103673880A (en) * | 2013-12-06 | 2014-03-26 | 上海新跃仪表厂 | Micro-hole inner wall vision inspection system based on composite reflector and inspection method of system |
CN105548261A (en) * | 2015-12-04 | 2016-05-04 | 华东理工大学 | Telomere length detecting method based on biological nano channel of aerolysin |
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