CN109186434A - Non-contact sub-nanometer method for sensing and device based on three-dimensional quantum tunnelling - Google Patents
Non-contact sub-nanometer method for sensing and device based on three-dimensional quantum tunnelling Download PDFInfo
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- CN109186434A CN109186434A CN201810889933.9A CN201810889933A CN109186434A CN 109186434 A CN109186434 A CN 109186434A CN 201810889933 A CN201810889933 A CN 201810889933A CN 109186434 A CN109186434 A CN 109186434A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/004—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring coordinates of points
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/26—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring depth
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/28—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring contours or curvatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/54—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using means specified in two or more of groups G01D5/02, G01D5/12, G01D5/26, G01D5/42, and G01D5/48
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/54—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using means specified in two or more of groups G01D5/02, G01D5/12, G01D5/26, G01D5/42, and G01D5/48
- G01D5/62—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using means specified in two or more of groups G01D5/02, G01D5/12, G01D5/26, G01D5/42, and G01D5/48 using wave or particle radiation means not covered by group G01D5/58
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- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Non-contact sub-nanometer method for sensing and device based on three-dimensional quantum tunnelling belong to accurate sensing and measuring technique；The present invention is sensed for conductor measured object using three-dimensional quantum tunnelling principle, the aiming gap of measured object and micrometering ball is adjusted to tunnelling operation interval first, bias voltage load is generated using bias field generating system again and forms bias field between micrometering ball and measured piece, then transducing signal is converted into for gap is aimed at by the generation of quantum tunneling effect, is extracted by tunnelling signal detection system with sub-nanometer resolving power aim at gap information thereafter；The present invention also provides a kind of sensing devices；The present invention has effectively taken into account sub-nanometer resolving power, Three-Dimensional Isotropic and non-contact sensor characteristic, it can be achieved that depth-to-width ratio micro-nano/micro-structure high-resolution survey greatly.
Description
Technical field
The invention belongs to precision sensing and field of measuring technique, relate generally to a kind of based on the non-contact of three-dimensional quantum tunnelling
Sub-nanometer method for sensing and device.
Background technique
With the increasingly raising of current Precision Machining manufacture level, micro-nano/micro-structure with big aspect ratio features exists
Sophisticated technology field is applied, and the method for sensing and sensing probe for the measurement of such precise structure become current research therewith
Hot spot.High resolution and pointing accuracy, Three-Dimensional Isotropic and not damaged rapid survey ability are to realize that big aspect ratio structures are high
The key element of precision measure.However, being applied to existing precision feeler and sensing technology scheme with big aspect ratio features
Structure measurement when, be difficult to realize Subnano-class high resolution, Three-Dimensional Isotropic, big depth-to-width ratio measurement capability and not damaged survey
Flow characteristic is effectively taken into account and high-acruracy survey.
Currently, existing precision feeler and sensing technology scheme can be divided into three types according to basic principle: i.e. micro- power connects
Touch measurement scheme, scanning probe designs and focusing light probe scheme.Micro- power contact type measurement scheme is difficult to be matched simultaneously
The two-dimensional surface perpendicular to measuring staff in and axial sensitivity characteristic, the problems such as gauge head attitude error it is more prominent, be difficult to realize true
Positive three-dimensional measurement, and due to dynamometry deform with damage there are its poor dynamics, cannot achieve not damaged rapid survey；Scanning
Probe and focusing light probe generally only have one-dimensional sensitivity characteristic, do not have and realize that laterally high-resolution potentiality, cooperative movement are swept
Retouching can only at most realize that two dimension half measures, and not have true three-dimensional measurement capability.Therefore, for the measurement of big aspect ratio structures,
Need to propose a kind of Subnano-class high resolution, true three-dimensional, big depth-to-width ratio measurement capability and non-cpntact measurement feature of having both
Sensing technology scheme.
For this problem, Harbin Institute of Technology proposes a kind of sensing measuring method based on spherical surface scattering electric field principle
(1.Ultraprecision 3D probing system based on spherical capacitive
plate.Sensors and Actuators A:Physical,2010；2. the ultraprecise based on spherical capacitance pole plate is non-contact
Formula three-dimensional aiming and measurement sensor, China Patent No.: ZL200910072143.2).The technical characterstic of the sensing technology scheme
Are as follows: (1) for the first time using spherical surface scattering electric field principle be applied to metal survey ball make it as spherical capacitance pole plate and realize it is contactless
Measurement, makes the gauge head be provided with the ability of not damaged rapid survey；(2) sensing characteristics with metal of the technical solution survey the straight of ball
Diameter is in close relations, is deteriorated therewith as metal survey bulb diameter reduces its sensing resolving power；The minimum of Project Realization surveys ball at present
Diameter is 500 μm, is not possible to the big aspect ratio structures of measurement micro/nano-scale at present.
Chongqing University of Technology proposes that a kind of nanometer displacement sensor scheme based on tunnel-effect is (a kind of based on tunnel-effect
Contact type nanometer displacement sensor, China Patent No.: ZL201010101154.1).The technical characterstic of the program are as follows: (1) should
Scheme is a kind of micro- power contact type measurement scheme, and gauge head contacts testee in measurement process, by guide rod by tested surface surface
Vertical height change be transferred in the spacing of probe and graphite block, and using one-dimensional tunnel effect principle by probe and graphite block
Spacing sensed as sensing unit, vertical nanoscale high resolution may be implemented；(2) due to the sensing technology scheme
Using probe, only have vertical high-resolution survey ability, do not have horizontal direction measurement capability substantially, i.e., only has vertical
One-dimensional measurement ability is unable to measure big depth-to-width ratio micro-structure dimensional parameters and horizontal direction is several without three-dimensional measurement ability
What parameter；(3) since gauge head and measured piece needs contacts can just make that tunnel-effect occurs between probe and graphite block, exist scratch to
The risk in survey face and gauge head, then the contact-sensing technical solution dynamic characteristic is poor, is difficult to realize quick nondestructive measurement；
(4) as all contact measuring heads, measuring staff length, which increases the deformation of its measuring force, inevitably introducing error to lead to precision
Decline.
German angstrom erlang root-Nuremburge university scholar proposes a kind of sensing measurement scheme based on Schottky radiation effect
(1.Schottky emission effect in surface topography:Method and
application.International Journal of Nanomanufacturing,2011；2.Electrical
probing for dimensional micro metrology.CIRP Journal of Manufacturing Science
and Technology,2008).The technical characterstic of the sensing technology scheme are as follows: (1) program is made using Schottky radiation effect
For sensing principle, it is non-contact sensor principle, not damaged rapid survey theoretically may be implemented；(2) Research Literature is one
The desk study of a principle, gauge head are directly to be formed by welding using solid metal stick with metal ball, are not directed to big depth-to-width ratio knot
The measurement of structure provides complete, specific technical solution, does not provide gauge head mechanical structure, signal transmission and shielding interference etc.
Technical solution cannot achieve the Practical Project measurement of big aspect ratio structures.
To sum up, by the innovation of sensing measuring method and device, provide a kind of sub-nanometer resolving power for effectively taking into account sensing,
The sensing technology scheme of Three-Dimensional Isotropic, big depth-to-width ratio measurement capability and not damaged rapid survey ability, it is micro- to big depth-to-width ratio
Receive/accurate measurement of micro-structure is of great significance.
Summary of the invention
Existing for big depth-to-width ratio micro-nano/micro-structure accurate measurement the purpose of the present invention is to the above-mentioned prior art
Problem provides a kind of non-contact sub-nanometer method for sensing and device based on three-dimensional quantum tunnelling, to realize the Ya Na of sensing
Rice resolving power, Three-Dimensional Isotropic characteristic, big depth-to-width ratio and the effective of not damaged rapid survey ability take into account.
The technical solution of the invention is as follows:
A kind of non-contact sub-nanometer method for sensing based on three-dimensional quantum tunnelling, the method for sensing the following steps are included:
1. tunnelling gauge head is adjusted with respect to the posture of measured piece using gauge head attitude-adjusting system, make tunnelling gauge head into
Enter to aim at posture；Enter tunnelling with measurement driving mechanism driving tunnelling gauge head or measured piece, relative distance therebetween again
After operation interval, measurement driving mechanism stops driving；
2. generating bias voltage load using bias field generating system forms biased electrical between micrometering ball and measured piece
, thereafter by the adjustment and control to bias field, make that three-dimensional quantum tunneling effect occurs between micrometering ball and measured piece, it will
Aiming gap between micrometering ball and measured piece is converted into transducing signal；
3. using tunnelling signal detection system to it is above-mentioned 2. in transducing signal detected and handled, according to aim at gap and
The model of corresponding relationship between transducing signal extracts the aiming gap letter between micrometering ball and measured piece with sub-nanometer resolving power
Breath realizes three-dimensional, sub-nanometer resolving power sensing and measurement.
A kind of non-contact sub-nanometer sensing device based on three-dimensional quantum tunnelling, including tunnelling gauge head, tunnelling signal processing
System, gauge head attitude-adjusting system, Collsion proof safety protection mechanism, measurement driving mechanism, the tunnelling gauge head is by micrometering ball, signal
Transmission mechanism, shielding body, chucking mechanism, signal connector, insulating element and signal wire are constituted, and the micrometering ball and signal pass
The lower end of transfer mechanism is connected, and the upper end of signal transmission mechanism is connected by signal wire with signal connector, signal transmission mechanism
Main body be located in shielding body, shielding body is assemblied in chucking mechanism, in shielding body be equipped with insulating element, signal connect
Connect device connection signal transmission cable, the shielding of shielding body, the shell of chucking mechanism and signal connector and signal-transmitting cable
Layer seamless connection；The tunnelling signal processing system by bias field generating system, tunnelling signal detection system, current limiting unit,
Communication cable and instrument main control computer are constituted, and the bias field generating system and tunnelling signal detection system pass through communication electricity
Cable is connect with instrument main control computer respectively；The signal connector of tunnelling gauge head, current limiting unit, tunnelling signal detection system, partially
Set electric field generation system, measured piece is sequentially connected in series by signal-transmitting cable, composition transducing signal measure loop；Tunnelling gauge head dress
It fits on the gauge head attitude-adjusting system, the gauge head attitude-adjusting system and the fixed dress of the Collsion proof safety protection mechanism
Match, measurement driving mechanism is mounted on Collsion proof safety protection mechanism or measured piece.
The good technique effect of technological innovation and generation of the invention is:
(1) accurate sensing is realized using three-dimensional quantum tunnelling principle, while realizes sub-nanometer resolving power and non-contact survey
It is constant to significantly reduce most to still ensure that sub-nanometer differentiates stress sense property at as low as 1 μm of micrometering bulb diameter for amount ability
Small measurable size；Not damaged rapid survey can be realized using non-contact measurement, and avoid friction, abrasion and damage
Part to be measured avoids the problem that measuring force deformation restricts measurement accuracy and can survey depth-to-width ratio, ensure that the dynamic characteristic of gauge head；
(2) the sensing technology scheme can realize Three-Dimensional Isotropic characteristic sensing to have three-dimensional measurement ability, no
Micro-nano/small big aspect ratio structures shape/shape characteristic can be only measured, vertical depth, lateral dimension, sky can be more measured
Between coordinate geometric parameter measurement, have the characteristic of isotropism, three-dimensional sub-nanometer resolving power and precision；
(3) the technical program is due to using three-dimensional quantum tunnelling principle and micrometering spherical structure, it can be achieved that Three-Dimensional Isotropic
With non-contacting sensing characteristics, thus can solve existing sensing technology scheme measurement conductor material big depth-to-width ratio micro-nano/it is micro-
The problem of precision increases with depth-to-width ratio and reduced when small structure, can be improved maximum detection depth-to-width ratio.
The present invention can effectively take into account sub-nanometer resolving power, Three-Dimensional Isotropic, big depth-to-width ratio measurement capability, be big depth-to-width ratio
Micro-nano/micro-structure accurate measurement provides a kind of effective sensing measuring method and device.
Detailed description of the invention
Fig. 1 is the non-contact Asia based on three-dimensional quantum tunnelling for measuring driving mechanism and being mounted on Collsion proof safety protection mechanism
Nanosensor apparatus structure schematic diagram；
Fig. 2 is the non-contact sub-nanometer sensing dress based on three-dimensional quantum tunnelling for measuring driving mechanism and being mounted on measured piece
Set structural schematic diagram；
Fig. 3 is a measured result of tested spacing and tunnel current relationship.
Piece number illustrates in figure: 1 tunnelling gauge head, 2 tunnelling signal processing systems, 3 gauge head attitude-adjusting systems, 4 Collsion proof safeties
Protection mechanism, 5 measurement driving mechanisms, 6 micrometering balls, 7 signal transmission mechanisms, 8 shielding bodies, 9 chucking mechanisms, the connection of 10 signals
Device, 11 signal-transmitting cables, 12 bias field generating systems, 13 tunnelling signal detection systems, 14 current limiting units, 15 measured pieces,
16 communication cables, 17 instrument main control computers, 18 insulating elements, 19 signal wires.
Specific embodiment
Detailed description of the preferred embodiments with reference to the accompanying drawing.
A kind of non-contact sub-nanometer method for sensing based on three-dimensional quantum tunnelling, the method for sensing the following steps are included:
1. tunnelling gauge head is adjusted with respect to the posture of measured piece using gauge head attitude-adjusting system, make tunnelling gauge head into
Enter to aim at posture；Enter tunnelling with measurement driving mechanism driving tunnelling gauge head or measured piece, relative distance therebetween again
After operation interval, measurement driving mechanism stops driving；
2. generating bias voltage load using bias field generating system forms biased electrical between micrometering ball and measured piece
, thereafter by the adjustment and control to bias field, make that three-dimensional quantum tunneling effect occurs between micrometering ball and measured piece, it will
Aiming gap between micrometering ball and measured piece is converted into transducing signal；
3. using tunnelling signal detection system to it is above-mentioned 2. in transducing signal detected and handled, according to aim at gap and
The model of corresponding relationship between transducing signal extracts the aiming gap letter between micrometering ball and measured piece with sub-nanometer resolving power
Breath realizes three-dimensional, sub-nanometer resolving power sensing and measurement.
A kind of non-contact sub-nanometer sensing device based on three-dimensional quantum tunnelling, including tunnelling gauge head 1, tunnelling signal processing
System 2, gauge head attitude-adjusting system 3, Collsion proof safety protection mechanism 4, measurement driving mechanism 5, the tunnelling gauge head 1 is by micrometering ball
6, signal transmission mechanism 7, shielding body 8, chucking mechanism 9, signal connector 10, insulating element 18 and signal wire 19 are constituted, institute
It states micrometering ball 6 to be connected with the lower end of signal transmission mechanism 7, the upper end of signal transmission mechanism 7 is connected by signal wire 19 and signal
It connects device 10 to be connected, the main body of signal transmission mechanism 7 is located in shielding body 8, and shielding body 8 is assemblied in chucking mechanism 9, is being shielded
It covers and is equipped with insulating element 18,10 connection signal transmission cable 11 of signal connector, shielding body 8,9 and of chucking mechanism in mechanism 8
The shell of signal connector 10 and the shielded layer of signal-transmitting cable 11 are seamlessly connected；The tunnelling signal processing system 2 is by inclined
Set electric field generation system 12, tunnelling signal detection system 13,17 structure of current limiting unit 14, communication cable 16 and instrument main control computer
At the bias field generating system 12 and tunnelling signal detection system 13 are calculated with instrument master control respectively by communication cable 16
Machine 17 connects；The signal connector 10 of tunnelling gauge head 1, current limiting unit 14, tunnelling signal detection system 13, bias field system
System 12, measured piece 15 are sequentially connected in series by signal-transmitting cable 11, constitute transducing signal measure loop；Tunnelling gauge head 1 is assemblied in
On the gauge head attitude-adjusting system 3, the gauge head attitude-adjusting system 3 and 4 fixing assembling of Collsion proof safety protection mechanism,
Measurement driving mechanism 5 is mounted on Collsion proof safety protection mechanism 4 or measured piece 15.
The micrometering ball 6 is made of stainless steel or tungsten carbide material, and spherome surface is gold-plated or alloy platinum material film.
6 diameter of micrometering ball is within the scope of 1 μm~φ of φ 1mm.
The gauge head attitude-adjusting system 3 is two-dimension flexible hinge, two-dimensional gas floating bearing or air-floating ball bearing structure.
The shielding body 8 and the signal-transmitting cable 11 are more coaxial configurations.
One embodiment of the present of invention is provided below with reference to Fig. 1 and Fig. 3.Fig. 1 is of the invention based on three-dimensional quantum tunnelling
Non-contact sub-nanometer sensing device structure diagram.Driving mechanism 5 is measured in the present embodiment drives tunnelling gauge head 1.Measured piece
15 tested surface is aperture inner cylinder face.Micrometering ball 6 uses stainless steel ball, the film of surface gold-plating material in tunnelling gauge head 1.Screen
Covering 8 wall thickness of mechanism is 20 μm.Signal transmission mechanism 7 is electrically being connect by welding with micrometering ball 6.Shielding body 8 and signal
Coaxially assembly constitutes coaxial configuration to transmission mechanism 7, and the insulating element 18 that the two is made up of insulating materials insulate, each component
Between reliably insulation and positioning.Shielding body 8 is loaded in chucking mechanism 9, and chucking mechanism 9 is assemblied in gauge head pose adjustment machine
On structure 3, gauge head attitude-adjusting system 3 and Collsion proof safety protection mechanism 4 are assembled.Gauge head attitude-adjusting system 3 is two-dimension flexible hinge
Chain structure.Collsion proof safety protection mechanism 4 uses magnetic-type protection mechanism, is fixed in measurement driving mechanism 5.Measure driving mechanism
5 there is Subnano-class to be displaced resolving power.Bias field generating system 12 and tunnelling signal detection system 13 pass through communication cable 16
It is connected with instrument main control computer 17, and is controlled by 17 pairs of the two of instrument main control computer.
The relative position of tunnelling gauge head 1 and measured piece 15 is adjusted first, and control measurement driving mechanism 5 drives tunnelling gauge head 1
Make its micrometering ball 6 gradually close to the tested surface of measured piece 15, relative distance between the two is progressively smaller until into tunnelling work
Make in section, adjustment bias field generating system 12 makes the constant voltage load of its output setting in micrometering ball 6 and is tested at this time
Bias field is formed between part 15, by the adjustment and control to bias field, makes to occur between micrometering ball 6 and measured piece 15 three-dimensional
The gap information of quantum tunneling effect, micrometering ball 6 and measured piece 15 is converted into transducing signal.Tunnelling signal processing system is monitored simultaneously
System 2 handles the transducing signal by controlling tunnelling signal detection system 13, measured piece 15 and micrometering ball 6 can be obtained
Aiming gap.It normalizes tested spacing and normalizes a measured curve of tunnelling current relationship as shown in figure 3, can build accordingly
Vertical measurement model.
Fig. 2 is another embodiment of the invention, and measurement driving mechanism 5 drives measured piece 15.Measured piece 15 is fixed
In measurement driving mechanism 5, drive measured piece 15 close to the micrometering ball 6 of tunnelling gauge head 1 to complete to survey by measurement driving mechanism 5
Amount.Tunnelling gauge head 1 is connected and fixed with gauge head attitude-adjusting system 3 and Collsion proof safety protection mechanism 4, the mountable Z in coordinate machine
In order to measuring on shaft movement mechanism.
Claims (6)
1. a kind of non-contact sub-nanometer method for sensing based on three-dimensional quantum tunnelling, it is characterised in that: the method for sensing includes
Following steps:
1. the posture using gauge head attitude-adjusting system to tunnelling gauge head with respect to measured piece is adjusted, enters tunnelling gauge head and take aim at
Quasi- posture；Tunnelling gauge head or measured piece are driven with measurement driving mechanism again, relative distance therebetween enters tunnelling work
Behind section, measurement driving mechanism stops driving；
2. generate bias voltage load using bias field generating system forms bias field between micrometering ball and measured piece, you
Afterwards by the adjustment and control to bias field, make that three-dimensional quantum tunneling effect occurs between micrometering ball and measured piece, by micrometering
Aiming gap between ball and measured piece is converted into transducing signal；
3. above-mentioned 2. middle transducing signal is detected and is handled using tunnelling signal detection system, according to aiming gap and sensing
The model of corresponding relationship between signal extracts the aiming gap information between micrometering ball and measured piece with sub-nanometer resolving power, real
Existing three-dimensional, sub-nanometer resolving power sensing and measurement.
2. a kind of non-contact sub-nanometer sensing device based on three-dimensional quantum tunnelling, including tunnelling gauge head (1), tunnelling signal processing
System (2), gauge head attitude-adjusting system (3), Collsion proof safety protection mechanism (4), measurement driving mechanism (5), it is characterised in that: institute
Tunnelling gauge head (1) is stated by micrometering ball (6), signal transmission mechanism (7), shielding body (8), chucking mechanism (9), signal connector
(10), insulating element (18) and signal wire (19) are constituted, and the micrometering ball (6) is connected with the lower end of signal transmission mechanism (7),
The upper end of signal transmission mechanism (7) is connected by signal wire (19) with signal connector (10), the main body of signal transmission mechanism (7)
In shielding body (8), shielding body (8) is assemblied on chucking mechanism (9), and insulating element is equipped in shielding body (8)
(18), signal connector (10) connection signal transmission cable (11), shielding body (8), chucking mechanism (9) and signal connector
(10) shielded layer of shell and signal-transmitting cable (11) is seamlessly connected；The tunnelling signal processing system (2) is by biased electrical
Field generating system (12), tunnelling signal detection system (13), current limiting unit (14), communication cable (16) and instrument main control computer
(17) constitute, the bias field generating system (12) and tunnelling signal detection system (13) pass through communication cable (16) respectively with
Instrument main control computer (17) connection；Signal connector (10), the current limiting unit (14), tunnelling signal detection of tunnelling gauge head (1)
System (13), bias field generating system (12), measured piece (15) are sequentially connected in series by signal-transmitting cable (11), constitute sensing
Signal detection circuit；Tunnelling gauge head (1) is assemblied on the gauge head attitude-adjusting system (3), the gauge head attitude-adjusting system
(3) with Collsion proof safety protection mechanism (4) fixing assembling, driving mechanism (5) is measured and are mounted on Collsion proof safety protection mechanism (4)
Or on measured piece (15).
3. the non-contact sub-nanometer sensing device according to claim 2 based on three-dimensional quantum tunnelling, it is characterised in that: institute
It states micrometering ball (6) to be made of stainless steel or tungsten carbide material, spherome surface is gold-plated or alloy platinum material film.
4. the non-contact sub-nanometer sensing device according to claim 2 based on three-dimensional quantum tunnelling, it is characterised in that: institute
Micrometering ball (6) diameter is stated within the scope of 1 μm~φ of φ 1mm.
5. the non-contact sub-nanometer sensing device according to claim 2 based on three-dimensional quantum tunnelling, it is characterised in that: institute
Stating gauge head attitude-adjusting system (3) is two-dimension flexible hinge, two-dimensional gas floating bearing or air-floating ball bearing structure.
6. the non-contact sub-nanometer sensing device according to claim 2 based on three-dimensional quantum tunnelling, it is characterised in that: institute
Stating shielding body (8) and the signal-transmitting cable (11) is more coaxial configurations.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109773290A (en) * | 2019-02-21 | 2019-05-21 | 清华大学 | The insulating materials workpiece surface of microballoon electrical contact feedback is directed at system and method |
| CN114354382A (en) * | 2022-01-05 | 2022-04-15 | 哈尔滨工业大学 | Two-dimensional self-sealing irradiation relaxation full-automatic detection device and method |
| CN114688958A (en) * | 2020-12-28 | 2022-07-01 | 株式会社三丰 | Inductive position sensing arrangement for indicating the position of a measuring device probe |
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