CN109166963B - 二维多铁半导体材料及其制备方法 - Google Patents
二维多铁半导体材料及其制备方法 Download PDFInfo
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- CN109166963B CN109166963B CN201811019235.XA CN201811019235A CN109166963B CN 109166963 B CN109166963 B CN 109166963B CN 201811019235 A CN201811019235 A CN 201811019235A CN 109166963 B CN109166963 B CN 109166963B
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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- H10N50/00—Galvanomagnetic devices
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Abstract
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M<sub>2x</sub>In<sub>2(1-x)</sub>Se<sub>3</sub> | 铁电性 | 铁磁性 | |
实施例1 | M=Fe;x=0.1 | 有 | 有 |
实施例2 | M=Fe;x=0.01 | 有 | 有 |
实施例3 | M=Fe;x=0.5 | 有 | 有 |
实施例4 | M=Co;x=0.1 | 有 | 有 |
对比例1 | x=0 | 有 | 无 |
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CN110257916A (zh) * | 2019-06-14 | 2019-09-20 | 中国科学院半导体研究所 | 二维磁性半导体材料MnIn2Se4的制备方法及在光探测器和场效应晶体管的应用 |
CN111455456A (zh) * | 2020-03-31 | 2020-07-28 | 河南师范大学 | 一种大尺寸二维三硒化二铟晶体的制备方法及其应用 |
CN112309440B (zh) * | 2020-10-21 | 2022-04-26 | 西北工业大学 | 基于铂-二维硒化铟-少层石墨肖特基二极管的光存储器件及存储方法 |
CN115959634A (zh) * | 2022-12-02 | 2023-04-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | 碳包覆NiSe2复合纳米材料及其制备方法与应用 |
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Denomination of invention: Two dimensional multiferrous semiconductor materials and their preparation methods Effective date of registration: 20221030 Granted publication date: 20200421 Pledgee: Hangzhou High-tech Financing Guarantee Co.,Ltd. Pledgor: Zhejiang Xinke Semiconductor Co.,Ltd. Registration number: Y2022330002838 |
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