CN109159311B - High-performance diamond wire - Google Patents
High-performance diamond wire Download PDFInfo
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- CN109159311B CN109159311B CN201811136372.1A CN201811136372A CN109159311B CN 109159311 B CN109159311 B CN 109159311B CN 201811136372 A CN201811136372 A CN 201811136372A CN 109159311 B CN109159311 B CN 109159311B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
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Abstract
The invention discloses a high-performance diamond wire which comprises a core layer and a resin layer coated on the surface of the core layer, wherein the core layer is a stainless steel fiber cluster and is formed by winding at least 3 stainless steel fibers. The preparation method comprises the steps of surface vinylbenzoic acid modification of the nano-diamond, surface vinylsiloxane modification of the nano-boron fiber, introduction of charged groups, preparation of resin mixed liquid, preparation of the diamond wire and the like. The high-performance diamond wire disclosed by the invention is simple and easy to prepare, has low requirements on equipment, and has higher cutting efficiency and strength than the diamond wire disclosed in the prior art, and the silicon wafer obtained by cutting has better quality and lower cutting cost, and the resin surface has stronger adhesive force with a steel wire.
Description
The invention relates to a divisional application of a Chinese patent 'a high-performance diamond wire and a preparation method thereof', wherein the application date is 9 and 11 days in 2017, and the application number is 201710813174.3.
Technical Field
The invention belongs to the technical field of diamond wire cutting, and particularly relates to a high-performance diamond wire.
Background
With the development of economic society, the solar photovoltaic industry has gradually become one of new leading industries due to its green environmental protection. The silicon wafer is one of common elements, is produced by cutting a silicon ingot or a silicon rod, and the cutting modes of the silicon wafer are the most common free abrasive and fixed abrasive, so that the free abrasive has serious environmental pollution, low production efficiency and thick damaged layer of the silicon wafer; the fixed abrasive has the advantages of simple process, short manufacturing period, low cost, good flexibility, good processing surface quality and the like, and is widely applied to silicon wafer cutting required by photovoltaic and IT industries.
Resin type diamond wire is a typical representative of fixed abrasives, which is a diamond abrasive fixed on a wire using resin as a binder. The resin diamond wire has the advantages of simple manufacturing process, low production cost, high production efficiency, good surface quality of silicon wafers and the like, and is gradually the main mode of cutting and processing the crystal silicon wafers. However, the resin bonding agent used for the resin diamond wire has low surface bonding force of the steel wire, so that the resin layer and the diamond abrasive particles fall off integrally, the steel wire is exposed finally, the wire breakage is generated, the wire mesh needs to be replaced at the moment, the silicon ingot finished product is poor, the use cost is increased, and the cutting efficiency is greatly reduced.
Chinese invention patent CN 103753720 a discloses a method for manufacturing resin diamond wire by using non-plated diamond, comprising the following steps: firstly, carrying out surface modification treatment on diamond micro powder; then preparing a resin and emery blending material; uniformly coating the resin and carborundum blended material on a core wire; and carrying out primary curing and secondary curing to obtain the finished product of the resin diamond wire. The resin diamond wire prepared by the method has the advantages of small average wire diameter, high cutting quality, high efficiency and small notch loss; however, the present invention cannot solve the problem of low adhesion between the resin binder and the surface of the steel wire, and the resin layer and the diamond abrasive grains are liable to fall off.
Chinese patent application publication CN102658606A discloses a method for manufacturing a resin diamond wire, which uses diamond dust after metal coating. However, the diamond abrasive using the metal coating has disadvantages in that: the metal coating process of the diamond abrasive is complex, the cost is high, the health of operators is harmed, the environmental pollution is serious, and the long-term development is not facilitated.
Therefore, there is a need for an efficient method for manufacturing high performance diamond wires.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a high-performance diamond wire and a preparation method thereof, the preparation method is simple and easy to implement, the requirement on equipment is not high, the diamond wire produced by the preparation method has higher cutting efficiency and strength than the diamond wire disclosed in the prior art, the quality of a silicon wafer obtained by cutting is better, the cutting cost is lower, and the adhesive force between the surface of resin and a steel wire is stronger.
In order to achieve the purpose, the invention adopts the technical scheme that the preparation method of the high-performance diamond wire comprises the following steps:
1) surface modification of the nano-diamond: uniformly mixing the nano-diamond and the nano-chromium powder, suspending the mixture in dichloromethane, adding vinyl benzoic acid into the mixture, stirring the mixture at room temperature for 6 to 8 hours, and then removing the solvent by rotation for later use;
2) modifying the surface of the nano boron fiber: suspending the nano boron fiber in dichloromethane, adding vinyl siloxane into the dichloromethane, stirring the mixture at room temperature for 6 to 8 hours, and then rotating the mixture to remove the solvent for later use;
3) introduction of a charged group: dissolving vinylbenzyl chloride in dichloromethane, adding triethylamine, stirring at room temperature for 6-8 hours, and then removing the solvent by rotation for later use;
4) preparing a resin mixed solution: mixing the product of the step 1), the product of the step 2) and the product of the step 3), adding the mixture into an organic solvent, adding unsaturated resin, an initiator and vinyl ferrocene into the organic solvent, and stirring the mixture into uniform paste;
5) preparation of diamond wire: coating the resin mixed solution prepared in the step 4) on the stainless steel fiber cluster subjected to plasma treatment, and then curing to obtain a diamond wire;
further, the mass ratio of the nano-diamond, the nano-chromium powder, the dichloromethane and the vinyl benzoic acid in the step 1) is as follows: 5:2 (15-20) 1;
further, the mass ratio of the nano boron fiber, the dichloromethane and the vinyl siloxane in the step 2) is as follows: 3, (9-15) 2;
further, the mass ratio of the vinylbenzyl chloride, the dichloromethane and the triethylamine in the step 3) is as follows: 2, (6-10) 3;
further, the mass ratio of the product of the step 1) in the step 4), the product of the step 2), the product of the step 3), the organic solvent, the unsaturated resin, the initiator and the vinyl ferrocene is as follows: (25-45), (3-5), (50-100), (10-25), (3-5) and (3-5);
the organic solvent is one or more selected from tetrahydrofuran, ethanol, isopropanol, N-dimethylformamide, dimethyl sulfoxide and N-methylpyrrolidone;
the unsaturated resin is selected from one or more of phenolic resin, epoxy resin and unsaturated polyester resin;
the initiator is selected from one or more of azobisisobutyronitrile and azobisisoheptonitrile;
the power of the plasma treatment is 5-15 KW;
the curing temperature in the step 5) is 100-250 ℃, and the curing time is 10-15 hours;
the stainless steel fiber cluster is formed by winding at least 3 stainless steel fibers;
the high-performance diamond wire is prepared by the preparation method of the high-performance diamond wire.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: compared with the diamond wire in the prior art, the strength of the diamond wire is greatly improved, and the bonding force between the resin layer and the core layer is large; the high-performance stainless steel fiber is adopted as a core layer material, so that the diameter can be thinned, the high yield and the high material utilization rate can be realized in the process of cutting the silicon wafer, and the diamond wire has excellent performance; the surface of the stainless steel is treated by the plasma, which is beneficial to the bonding of the resin and the core layer; the surface of the nano diamond is modified with metal chromium, so that the nano diamond is beneficial to dispersing nano materials on one hand and enhancing the bonding force between the resin layer and the core layer on the other hand; charged groups are added into the resin, so that the bonding of the resin and the core layer is facilitated; the nano boron fiber is added, and the diamond wire can be endowed with higher strength due to the excellent characteristics of larger surface area and the like of the nano material; each nano material is linked with the main chain of the resin molecule through a chemical bond, and the exudation of small molecules can be effectively avoided.
Detailed Description
In order to make the technical solutions of the present invention better understood and make the above features, objects, and advantages of the present invention more comprehensible, the present invention is further described with reference to the following examples. The examples are intended to illustrate the invention only and are not intended to limit the scope of the invention.
Example 1
A preparation method of a high-performance diamond wire comprises the following steps:
1) surface modification of the nano-diamond: uniformly mixing 500g of nano diamond and 200g of nano chromium powder, suspending the mixture in 1500g of dichloromethane, adding 100g of vinyl benzoic acid into the mixture, stirring the mixture at room temperature for 6 hours, and then removing the solvent by rotation for later use;
2) modifying the surface of the nano boron fiber: suspending 300g of nano boron fiber in 900g of dichloromethane, adding 200g of vinyl siloxane, stirring at room temperature for 6 hours, and then removing the solvent by rotation for later use;
3) introduction of a charged group: dissolving 200g of vinylbenzyl chloride in 600g of dichloromethane, adding 300g of triethylamine, stirring at room temperature for 6 hours, and then removing the solvent by rotation for later use;
4) preparing a resin mixed solution: mixing 25 parts of the product obtained in the step 1), 3 parts of the product obtained in the step 2) and 4 parts of the product obtained in the step 3), adding the mixture into 50 parts of tetrahydrofuran, adding 20 parts of phenolic resin, 3 parts of azodiisobutyronitrile and 4 parts of vinyl ferrocene into the mixture, and stirring the mixture into uniform paste;
5) preparation of diamond wire: coating the resin mixed solution prepared in the step 4) on the stainless steel fiber cluster subjected to plasma treatment, and then curing to obtain a diamond wire; the power of the plasma treatment is 5 KW; the curing temperature is 100 ℃, and the curing time is 10 hours; the stainless steel fiber cluster is formed by winding 3 stainless steel fibers.
The high-performance diamond wire is prepared by the preparation method of the high-performance diamond wire.
Example 2
A preparation method of a high-performance diamond wire comprises the following steps:
1) surface modification of the nano-diamond: uniformly mixing 500g of nano diamond and 200g of nano chromium powder, suspending the mixture in 1700g of dichloromethane, adding 100g of vinyl benzoic acid into the mixture, stirring the mixture at room temperature for 7 hours, and then removing the solvent by rotation for later use;
2) modifying the surface of the nano boron fiber: suspending 300g of nano boron fiber in 1000g of dichloromethane, adding 200g of vinyl siloxane, stirring at room temperature for 7 hours, and then removing the solvent by rotation for later use;
3) introduction of a charged group: dissolving 200g of vinylbenzyl chloride in 800g of dichloromethane, adding 300g of triethylamine, stirring at room temperature for 7 hours, and then removing the solvent by rotation for later use;
4) preparing a resin mixed solution: mixing 30 parts of the product obtained in the step 1), 4 parts of the product obtained in the step 2) and 5 parts of the product obtained in the step 3), adding the mixture into 60 parts of N, N-dimethylformamide, adding 25 parts of epoxy resin, 4 parts of azobisisoheptonitrile and 5 parts of vinyl ferrocene, and stirring the mixture into uniform paste;
5) preparation of diamond wire: coating the resin mixed solution prepared in the step 4) on the stainless steel fiber cluster subjected to plasma treatment, and then curing to obtain a diamond wire; the power of the plasma treatment is 10 KW; the curing temperature is 150 ℃, and the curing time is 12 hours; the stainless steel fiber cluster is formed by winding 5 stainless steel fibers.
The high-performance diamond wire is prepared by the preparation method of the high-performance diamond wire.
Example 3
A preparation method of a high-performance diamond wire comprises the following steps:
1) surface modification of the nano-diamond: uniformly mixing 500g of nano diamond and 200g of nano chromium powder, suspending the mixture in 1800g of dichloromethane, adding 100g of vinyl benzoic acid into the mixture, stirring the mixture at room temperature for 7.5 hours, and then removing the solvent by rotation for later use;
2) modifying the surface of the nano boron fiber: suspending 300g of nano boron fiber in 1200g of dichloromethane, adding 200g of vinyl siloxane, stirring at room temperature for 6.5 hours, and then removing the solvent by rotation for later use;
3) introduction of a charged group: dissolving 200g of vinylbenzyl chloride in 850g of dichloromethane, adding 300g of triethylamine, stirring at room temperature for 7 hours, and then removing the solvent by rotation for later use;
4) preparing a resin mixed solution: mixing 40 parts of the product obtained in the step 1), 5 parts of the product obtained in the step 2) and 5 parts of the product obtained in the step 3), adding the mixture into 80 parts of dimethyl sulfoxide, adding 24 parts of unsaturated polyester resin, 4 parts of azodiisobutyronitrile and 5 parts of vinyl ferrocene into the mixture, and stirring the mixture into uniform paste;
5) preparation of diamond wire: coating the resin mixed solution prepared in the step 4) on the stainless steel fiber cluster subjected to plasma treatment, and then curing to obtain a diamond wire; the power of the plasma treatment is 12 KW; the curing temperature is 220 ℃, and the curing time is 13 hours; the stainless steel fiber cluster is formed by winding 5 stainless steel fibers.
The high-performance diamond wire is prepared by the preparation method of the high-performance diamond wire.
Example 4
A preparation method of a high-performance diamond wire comprises the following steps:
1) surface modification of the nano-diamond: uniformly mixing 500g of nano diamond and 200g of nano chromium powder, suspending the mixture in 2000g of dichloromethane, adding 100g of vinyl benzoic acid into the mixture, stirring the mixture at room temperature for 8 hours, and then removing the solvent by rotation for later use;
2) modifying the surface of the nano boron fiber: suspending 300g of nano boron fiber in 1500g of dichloromethane, adding 200g of vinyl siloxane, stirring at room temperature for 8 hours, and then removing the solvent by rotation for later use;
3) introduction of a charged group: dissolving 200g of vinylbenzyl chloride in 1000g of dichloromethane, adding 300g of triethylamine, stirring at room temperature for 8 hours, and then removing the solvent by rotation for later use;
4) preparing a resin mixed solution: mixing 45 parts of the product obtained in the step 1), 5 parts of the product obtained in the step 2) and 5 parts of the product obtained in the step 3), adding the mixture into 100 parts of N-methylpyrrolidone, adding 25 parts of phenolic resin, 5 parts of azobisisoheptonitrile and 5 parts of vinyl ferrocene, and stirring the mixture into uniform paste;
5) preparation of diamond wire: coating the resin mixed solution prepared in the step 4) on the stainless steel fiber cluster subjected to plasma treatment, and then curing to obtain a diamond wire; the power of the plasma treatment is 15 KW; the curing temperature is 250 ℃, and the curing time is 15 hours; the stainless steel fiber cluster is formed by winding 3 stainless steel fibers.
The high-performance diamond wire is prepared by the preparation method of the high-performance diamond wire.
Product performance testing of the above examples:
(1) the tensile strength is tested, the test method refers to GBT8358-2006, and the test result is shown in Table 1;
(2) hardness is tested according to the test method GB/T4340.1-1999, and the test results are shown in Table 1;
(3) the cutting performance test is that a silicon rod with the specification of 8-inch single crystal is cut by a diamond wire on a PV600 silicon wafer multi-wire cutting machine, the theoretical number of the silicon wafers is calculated in a mode of (length of the silicon rod/distance of the silicon rod) × 1000, the actual number of the silicon wafers is data obtained by experimental slicing, the wafer yield is actual data/theoretical data, the yield is qualified number/actual wafer yield in actual wafer yield, and the material utilization rate is wafer thickness/groove distance; the test results are shown in Table 1.
Table 1 results of testing the properties of the metal wires prepared in each set of examples
As can be seen from the table above, the steel wire for multi-wire cutting disclosed by the invention has better hardness and tensile strength, and when a silicon wafer is cut, the material utilization rate is higher, and the wafer yield and the finished product rate are also higher.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; as will be readily apparent to those skilled in the art from the disclosure herein, the present invention may be practiced without these specific details; however, those skilled in the art should appreciate that they can readily use the disclosed conception and specific embodiments as a basis for designing or modifying other structures for carrying out the same purposes of the present invention; meanwhile, any changes, modifications, and evolutions of the equivalent changes of the above embodiments according to the actual techniques of the present invention are still within the protection scope of the technical solution of the present invention.
Claims (6)
1. The high-performance diamond wire is characterized by comprising a core layer and a resin layer coated on the surface of the core layer, wherein the core layer is a stainless steel fiber cluster and is formed by winding at least 3 stainless steel fibers; the resin layer is a cured resin mixed solution and is obtained by linking reaction of each nano material and a resin molecule main chain through a chemical bond;
the nano materials of the resin mixed solution comprise nano diamond with surface modified metal chromium, nano boron fiber with surface modified vinyl siloxane, and vinyl benzyl chloride with charged groups, and the nano materials are mixed and added into an organic solvent, then unsaturated resin, an initiator and vinyl ferrocene are added into the organic solvent, and the mixture is stirred into uniform paste to obtain the resin mixed solution.
2. The high-performance diamond wire according to claim 1, wherein the nano-diamond with the surface modified with the metal chromium is prepared by uniformly mixing the nano-diamond and nano-chromium powder, suspending the mixture in dichloromethane, adding vinyl benzoic acid into the mixture, stirring the mixture at room temperature for 6 to 8 hours, and then removing the solvent by rotation.
3. The high performance diamond wire according to claim 1, wherein said nano boron fiber with vinyl siloxane surface modification is prepared by suspending nano boron fiber in dichloromethane, adding vinyl siloxane into the nano boron fiber, stirring for 6-8 hours at room temperature, and removing solvent by rotation.
4. The high-performance diamond wire according to claim 1, wherein the vinylbenzyl chloride added with the charged group is prepared by dissolving vinylbenzyl chloride in dichloromethane, adding triethylamine, stirring at room temperature for 6-8 hours, and removing the solvent by rotation.
5. The high-performance diamond wire according to claim 1, wherein the organic solvent is one or more selected from tetrahydrofuran, ethanol, isopropanol, N-dimethylformamide, dimethyl sulfoxide and N-methylpyrrolidone.
6. The high-performance diamond wire according to claim 1, wherein the unsaturated resin is one or more selected from phenolic resin, epoxy resin and unsaturated polyester resin; the initiator is selected from one or more of azobisisobutyronitrile and azobisisoheptonitrile.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811136372.1A CN109159311B (en) | 2017-09-11 | 2017-09-11 | High-performance diamond wire |
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|---|---|---|---|
| CN201811136372.1A CN109159311B (en) | 2017-09-11 | 2017-09-11 | High-performance diamond wire |
| CN201710813174.3A CN107443602B (en) | 2017-09-11 | 2017-09-11 | A kind of high-performance diamond line and preparation method thereof |
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| CN201710813174.3A Division CN107443602B (en) | 2017-09-11 | 2017-09-11 | A kind of high-performance diamond line and preparation method thereof |
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| CN109159311A CN109159311A (en) | 2019-01-08 |
| CN109159311B true CN109159311B (en) | 2020-08-18 |
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| CN113787639A (en) * | 2021-07-28 | 2021-12-14 | 泗县绿昂新材料科技有限公司 | High-performance diamond wire and preparation method thereof |
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|---|---|
| CN107443602B (en) | 2019-04-19 |
| CN109159311A (en) | 2019-01-08 |
| CN107443602A (en) | 2017-12-08 |
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