CN109148575B - 一种含有混合漏电极的氮化镓hemt器件 - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
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- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 230000001052 transient effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Abstract
本发明公开了一种含有混合漏电极的氮化镓HEMT器件，属于半导体功率器件技术领域。本发明通过在原有漏极引入P型氮化镓，使该器件在正向导通或者开通瞬态过程中有空穴注入二维电子气及其周边区域，使得被深能级缺陷捕获的电子可以被快速中和，从而恢复器件二维电子气的导电特性，降低了器件的动态电阻，防止电流崩塌。
Description
技术领域
本发明涉及半导体技术领域，具体涉及一种含有混合漏电极的氮化镓HEMT器件。
背景技术
氮化镓在近十多年来得到了迅速发展，其更高的频率可以使得电路的转换效率更高、体积更小。但是由于电流崩塌(Current Collapse)和动态电阻等因素，氮化镓高电子迁移率晶体管（HEMT）的实际效率较理论仍有较大的差距。其主要原因是器件在高压状态下，在体内的深能级缺陷中捕获了电子，当器件正向导通时，这些被捕获的电子引入额外的散射并排斥二维电子气内的自由电子，使得器件动态电阻大大高于静态测量电阻。
发明内容
针对现有技术的缺陷，本发明提供一种含有混合电极的氮化镓HEMT器件。本发明通过在原有漏极引入P型氮化镓，使该器件在正向导通或者开通瞬态过程中有空穴注入二维电子气及其周边区域，使得被深能级缺陷捕获的电子可以被快速中和，从而恢复器件二维电子气的导电特性，降低了器件的动态电阻，防止电流崩塌。
本发明提供一种含有混合漏电极的氮化镓HEMT器件，包括：
衬底(001)，其正面和背面依次设有缓冲外延层(002)和背部电极(011)；
缓冲外延层(002)向上依次生长有第一外延层(003)和第二外延层(004)；
第一外延层(003)与第二外延层(004)由于压电效应形成二维电子气(005)；
第二外延层(004)的局部区域顶部设有栅极第三外延层(006)和漏极第三外延层(106)；
栅极第三外延层(006)顶部设有栅电极(009)；
漏极第三外延层(106)顶部设有漏电极(010)；
在栅电极(009)的另一侧，与漏电极(010)相对应的，设有源电极(008)；
源电极(008)通过源极欧姆金属(007)与其下方的二维电子气(005)形成等电位；
漏电极(010)通过漏极欧姆金属(107)与其下方的二维电子气(005)形成等电位。
其中，所述的衬底(001)材料为硅、碳化硅之中的一种。
其中，所述的缓冲外延层(002)材料为铝、氮、镓元素组成的介质材料。
其中，所述的第一外延层(003)材料为氮化镓。
其中，所述的第一外延层(003)具有1E10cm-3-1E18cm-3的N型掺杂，其掺杂方式可以是电离杂质、晶格缺陷之中的至少一种。
其中，所述的第二外延层(004)材料为铝镓氮，或记为AlxGa1-xN，其铝成分比例x为1%-50%之间。
可选地，所述的漏极第三外延层(106)为P型半导体，其材料为氮化镓、砷化镓、磷化铟、硅、锗、碳化硅之一。
可选地，所述的漏极第三外延层(106)为金属，其材料为Pt、Ni、Ti、Mo、TiN、W、TiW之中的至少一种。
其中，所述的漏极欧姆金属(107)和漏极第三外延层(106)同时与漏电极(010)连接。
可选地，所述的漏电极(010)下方设有多个漏极欧姆金属(107)区域和多个漏极第三外延层(106)区域。
进一步，所述的多个漏极欧姆金属(107)区域和多个漏极第三外延层(106)区域，其特征在于，所述的多个漏极欧姆金属(107)区域和多个漏极第三外延层(106)区域沿着与栅极第三外延层(006)边缘平行的方向混合排列。
可选地，所述的漏电极(010)下方设有单个漏极欧姆金属(107)区域和单个漏极第三外延层(106)区域。
进一步，所述的单个漏极欧姆金属(107)区域和单个漏极第三外延层(106)区域从距离栅极第三外延层(006)边缘由近到远依次排列，且其长度方向平行。
附图说明
图1-3 分别是实施例一的顶视图、AA’纵切面视图、BB’纵切面视图。该实施例中，多个漏极欧姆金属(107)区域和多个漏极第三外延层(106)区域沿着与栅极第三外延层(006)边缘平行的方向交替排列。
图4-5分别是实施例二的顶视图和CC’纵切面视图。该实施例中，单个漏极欧姆金属(107)区域和单个漏极第三外延层(106)区域从距离栅极第三外延层(006)边缘由近到远依次排列，且其长度方向平行。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合实施例并参考附图，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
本发明的一个实施例中，所述的衬底(001)材料为硅材料。
本发明的一个实施例中，所述的缓冲外延层(002)材料为多层AlN、AlGaN、GaN组合。
本发明的一个实施例中，所述的第一外延层(003)材料为氮化镓。
本发明的一个实施例中，所述的第一外延层(003)具有1E16cm-3的N型掺杂，其掺杂方式为晶格缺陷引入的非故意掺杂。
本发明的一个实施例中，所述的第二外延层(004)材料为Al0.27Ga0.73N。
本发明的一个实施例中，所述的栅极第三外延层(006)和漏极第三外延层(106)为氮化镓，其导电类型为P型。
本发明的一个实施例中，所述的漏极欧姆金属(107)和漏极第三外延层(106)同时与漏电极(010)连接。
本发明的一个实施例中，所述的漏电极(010)下方设有多个漏极欧姆金属(107)区域和多个漏极第三外延层(106)区域，并沿着与栅极第三外延层(006)边缘平行的方向交替排列。
Claims (7)
1.一种含有混合漏电极的氮化镓HEMT器件，包括：
衬底(001)，其正面和背面依次设有缓冲外延层(002)和背部电极(011)；
缓冲外延层(002)向上依次生长有第一外延层(003)和第二外延层(004)；
第一外延层(003)与第二外延层(004)的交界面上具有二维电子气(005)；
第二外延层(004)的局部区域顶部设有栅极第三外延层(006)和漏极第三外延层(106)；
栅极第三外延层(006)顶部设有栅电极(009)；
漏极第三外延层(106)顶部设有漏电极(010)；
在栅电极(009)的另一侧，与漏电极(010)相对应的，设有源电极(008)；
源电极(008)通过源极欧姆金属(007)与其下方的二维电子气(005)形成等电位；
漏电极(010)通过漏极欧姆金属(107)与其下方的二维电子气(005)形成等电位；
其特征在于，漏极欧姆金属(107)和漏极第三外延层(106)同时与漏电极(010)形成等电位；
所述的栅极第三外延层(006)，其导电类型为 P型；
所述的漏极第三外延层(106)为 P 型半导体，其材料为三五族化合物半导体、四族化合物半导体或四族单元素半导体之一。
2.根据权利要求 1 所述的一种含有混合漏电极的氮化镓HEMT器件，其特征在于，所述的衬底(001)材料为硅、碳化硅之中的一种；缓冲外延层(002)材料为铝、氮、镓元素组成的介质材料；第一外延层(003)材料为氮化镓。
3.根据权利要求 1所述的一种含有混合漏电极的氮化镓HEMT器件，其特征在于，所述的第二外延层(004)材料为铝镓氮，或记为 A1XGa1-XN，其铝成分比例x为1%-50%之间。
4.根据权利要求1所述的一种含有混合漏电极的氮化镓HEMT器件，其特征在于，所述的漏电极(010)下方设有多个漏极欧姆金属(107)区域和多个漏极第三外延层(106)区域。
5.根据权利要求 1所述的一种含有混合漏电极的氮化镓HEMT器件，其特征在于，所述的多个漏极欧姆金属(107)区域和多个漏极第三外延层(106)区域沿着与栅极第三外延层(006)边缘平行的方向混合排列。
6.根据权利要求 1所述的一种含有混合漏电极的氮化镓HEMT器件，其特征在于，所述的漏电极(010)下方设有单个漏极欧姆金属(107)区域和单个漏极第三外延层(106)区域。
7.根据权利要求6所述的一种含有混合漏电极的氮化镓HEMT器件，其特征在于，所述的单个漏极欧姆金属(107)区域和单个漏极第三外延层(106)区域从距离栅极第三外延层(006)边缘由近到远依次排列，且其长度方向平行。
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| WO2010151721A1 (en) * | 2009-06-25 | 2010-12-29 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Transistor with enhanced channel charge inducing material layer and threshold voltage control |
| CN104051523A (zh) * | 2014-07-04 | 2014-09-17 | 苏州能讯高能半导体有限公司 | 一种低欧姆接触电阻的半导体器件及其制作方法 |
| CN106653840A (zh) * | 2016-11-15 | 2017-05-10 | 苏州捷芯威半导体有限公司 | 一种半导体器件及其制造方法 |
| CN106449747A (zh) * | 2016-11-28 | 2017-02-22 | 电子科技大学 | 一种逆阻型氮化镓高电子迁移率晶体管 |
| CN107910364A (zh) * | 2017-11-14 | 2018-04-13 | 电子科技大学 | 一种逆阻型氮化镓器件 |
| CN208889667U (zh) * | 2018-10-22 | 2019-05-21 | 派恩杰半导体（杭州）有限公司 | 一种含有混合漏电极的氮化镓hemt器件 |
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