CN109148341A - A kind of CMP wafer cleaning equipment - Google Patents
A kind of CMP wafer cleaning equipment Download PDFInfo
- Publication number
- CN109148341A CN109148341A CN201811200500.4A CN201811200500A CN109148341A CN 109148341 A CN109148341 A CN 109148341A CN 201811200500 A CN201811200500 A CN 201811200500A CN 109148341 A CN109148341 A CN 109148341A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning
- unit
- cmp
- cleaning equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 101
- 238000001035 drying Methods 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims abstract description 19
- 238000005201 scrubbing Methods 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 140
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000007306 turnover Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 8
- 230000009466 transformation Effects 0.000 abstract description 4
- 238000012545 processing Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000007521 mechanical polishing technique Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of CMP wafer cleaning equipments, including cleaning input unit, megasonic cleaning unit, the first brush scrubbing unit, the second brush scrubbing unit, the drying unit being arranged successively, transmission manipulator and turning manipulator are located at the top of cleaning equipment, transmission manipulator includes horizontal movement axis, vertical movement axis and wafer grabbing device, wafer can be transmitted between the units, the wafer in the grabbing device is grabbed and overturn by turning manipulator.It in addition to this, further include buffer cell, the buffer cell is located at the front of cleaning input unit, can interim storing wafer.Further include wafer polishing channel, be located between cleaning input unit and megasonic cleaning unit, the wafer before facilitating CMP step passes through cleaning equipment when entering polishing area.The present invention has introduced buffer cell, when CMP wafer cleaning equipment breaks down, can realize secure storage for polished wafer, can also effectively solve the problems, such as the secure storage of the wafer between Program transformation.
Description
Technical field
The invention belongs to wafer grinding or polishing process technology field, it is related to being applied to the wafer cleaning field after CMP
A kind of CMP wafer cleaning equipment.
Background technique
With the rapid development of semiconductor industry, integrated circuit feature size constantly tends to miniaturize, and semiconductor wafer is not
Disconnectedly develop towards small size, high circuit closeness, quick, low power consumption direction, integrated circuit has entered ULSI submicron order
Technological phase.Along with being gradually increased for silicon wafer diameter, line width gradually reduces in element, and number of metal increases, because
The high planarization of this semiconductor film film surface has important influence to the high-performance, low cost, high finished product rate of device, this causes
It will be increasingly stringent to the flatness requirement of silicon wafer surface.
Currently, as unique planarization techniques chemical Mechanical Polishing Technique that can obtain leveling effect, CMP
(Chemical Mechanical Planarization, chemical-mechanical planarization) has developed into collection online measuring, online end
The technologies such as point detection, cleaning are integrated circuits to miniaturization, multiple stratification, slimming, flat in the chemical Mechanical Polishing Technique of one
The product of smoothization technological development.Simultaneously it is also wafer from 200mm to 300mm or even larger diameter transition, improves productivity, reduces
Technology necessary to manufacturing cost, substrate global planarizartion.After wafer carries out CMP processing, it can be remained in crystal column surface
The removal object and polishing fluid of processing, in order to remove the pollutant of crystal column surface in time, the CMP tool cleaning equipment that needs to arrange in pairs or groups makes
With.
Currently, the cleaning equipment of mainstream is configured with wafer vertical mode and wafer horizontal mode, the cleaning of every kind of equipment
Unit configuration is not again identical.The cleaning unit of vertical mode can save the device space, and megasonic cleaning is consistent with the technique of scrub
Property it is more preferable, but due to being affected by gravity during drying, drying effect is not so good as horizontal mode, and the cleaning unit of horizontal mode
It is unfavorable for pollutant again and removes crystal column surface in time.Therefore it needs to be comprehensively considered according to the characteristic of cleaning unit and drying unit
The modes of emplacement of wafer, and it is also contemplated that how the conversion of wafer modes of emplacement implements.In addition, CMP wafer cleaning is set
It is standby that how the wafer for having completed to polish program ensures secure storage Yi Dan break down when, will not crystal column surface cleannes
Be affected is also that a needs consider the problems of and solve.
Summary of the invention
Present invention aims at the different allocation plans for being directed to various cleaning units, provide corresponding transmission mode, and right
During existing wafer cleaning when CMP wafer cleaning equipment breaks down, how the wafer for having completed polishing ensures
The problem of secure storage, proposes a solution, and the secure storage that can effectively solve the wafer between Program transformation is asked
Topic.
For this purpose, technical solution proposed by the present invention is a kind of CMP wafer cleaning equipment, including the cleaning being arranged successively
Input unit, megasonic cleaning unit, the first brush scrubbing unit, the second brush scrubbing unit, drying unit, transmission manipulator and turning mechanical
Hand is located at the top of cleaning equipment, and transmission manipulator includes horizontal movement axis, vertical movement axis and wafer grabbing device, can will be brilliant
Circle transmits between the units, and the wafer in the grabbing device is grabbed and overturn by turning manipulator.In addition to this, it also wraps
Buffer cell is included, the buffer cell is located at the front of cleaning input unit, can interim storing wafer.
Above equipment further includes wafer polishing channel, is located between cleaning input unit and megasonic cleaning unit, convenient
Wafer before CMP step passes through cleaning equipment when entering polishing area.
Wafer bracket in wafer polishing channel and cleaning input unit can be removed concurrently or separately, facilitated and filled
Carry wafer operation.
Water injector is set in buffer cell, prevents wafer not cleaned and dries.
Preferably, can temporarily store 2-10 wafer in buffer cell.
Preferably, vertically, wafer is in level side to wafer during drying during cleaning and scrub
To.
When the technique vertically dried requires to can satisfy processing request, wafer is in during cleaning, scrub, drying
Vertical direction.
The transformation of wafer from horizontal to vertical is overturn by transmission manipulator, can also pass through independent turning mechanical
Hand is realized.
Transmission manipulator successively includes wafer grabbing device one and crystalline substance on cleaning input unit to the direction of drying unit
Circle grabbing device two.
Under conditions of cleaning capacity allows, the wafer grabbing device one (603) close to drying cell side can carry crystalline substance
Circle turn over function, to save a turning manipulator.
Compared with prior art, the present invention has following advantageous effects:
1, the buffer cell that the present invention introduces can allow entire cleaning equipment fault-tolerant ability stronger, during wafer cleaning,
When CMP wafer cleaning equipment breaks down, the wafer for having completed polishing can realize secure storage, can also have
Effect solves the problems, such as the secure storage of the wafer between Program transformation.
2, the present invention is more effectively to utilize the space of equipment, and CMP wafer cleaning equipment can also be logical including wafer polishing
Road is located between cleaning input unit and megasonic cleaning unit, and the wafer before facilitating CMP step passes through clear when entering polishing area
Wash equipment.
3, according to the difference that wafer cleaning technique requires, each cleaning unit can also will be got rid of with all vertical modes
Dry unit becomes horizontal mode.
4, transmission manipulator is improved by using the design being integrated in two sets of grabbing devices on a set of horizontal movement axis
Efficiency of transmission avoids the horizontal shaft design of the more sets hidden danger that may be present mutually collided.
Detailed description of the invention
Fig. 1 is the structure chart of wafer cleaning equipment of the present invention;
Fig. 2 is the three-dimensional effect diagram of wafer cleaning equipment;
Fig. 3 is the three-dimensional effect diagram of one embodiment;
Fig. 4 is the three-dimensional effect diagram of second embodiment;
Fig. 5 is the three-dimensional effect diagram of third embodiment.
Specific embodiment
The invention will now be described in further detail with reference to the accompanying drawings.
It as illustrated in fig. 1 and 2, include buffer cell 8 provided by the present invention for the wafer cleaning equipment cleaned after CMP, clear
Wash input unit 1, wafer polishing channel 10, megasonic cleaning unit 2, brush scrubbing unit 3, brush scrubbing unit 4, drying unit 5, conveyer
Tool hand 6 and turning manipulator 7.
Buffer cell 8, cleaning input unit 1, wafer polishing channel 10, megasonic cleaning list in CMP wafer cleaning equipment
Member 2, brush scrubbing unit 3, brush scrubbing unit 4 and drying unit 5 are successively arranged in a row.In the top of cleaning unit, one group of conveyer is set
Tool hand 6.The transmission manipulator 6 includes horizontal movement axis 601, vertical movement axis 602, wafer grabbing device 1 and wafer
Grabbing device 2 604.
Cleaning unit is easily propagated through when entering polishing area for convenience of the wafer before CMP, is provided in cleaning unit
Wafer polishing channel 10.Wafer after polishing needs to be cleaned immediately, and wafer 9 to be cleaned is put first to cleaning input unit
1, to prevent desiccation during waiting of wafer 9, cleaning design in input unit 9 has water injector.
After next cleaning unit megasonic cleaning unit 2 completes processing, the wafer grabbing device two of transmission manipulator 6
604 wafer 9 in the vertical movement crawl cleaning input unit 1 of axis 602, wafer grabbing device 1 and wafer grabbing device
2 604 are transferred to above megasonic cleaning unit 2 along horizontal movement axis 601, and wafer grabbing device 1 is along vertical movement axis 602
The wafer 9 in megasonic cleaning unit 2 is grabbed, wafer grabbing device 2 604 is clear along vertical movement placement 9 to million sound of wafer of axis 602
It washes in unit 2.
After next cleaning unit brush scrubbing unit 3 completes processing, wafer grabbing device 1 and wafer grabbing device two
604 are transferred to above brush scrubbing unit 3 along horizontal movement axis 601, and wafer grabbing device 2 604 is along the vertical movement crawl brush of axis 602
The wafer 9 in unit 3 is washed, wafer grabbing device 1 places wafer 9 into brush scrubbing unit 3 along vertical movement axis 602.
After next cleaning unit brush scrubbing unit 4 completes processing, wafer grabbing device 1 and wafer grabbing device two
604 are transferred to above brush scrubbing unit 4 along horizontal movement axis 601, and wafer grabbing device 1 is along the vertical movement crawl brush of axis 602
The wafer 9 in unit 4 is washed, wafer grabbing device 2 604 places wafer 9 into brush scrubbing unit 4 along vertical movement axis 602.
After next cleaning unit drying unit 5 completes processing, turning manipulator 7 is by the wafer 9 in grabbing device 603
It grabs and overturns in placement drying unit 5.Wafer 9 completes entire cleaning process, wafer 9 after completion of processing in drying unit 5
It is taken away by other equipment manipulator.So circulation carries out the surface cleaning of wafer 9.
When some or the multiple units in cleaning unit break down, the wafer 9 cleaned in input unit 1 will be by grabbing
Device 604 is taken to put into buffer cell 8.According to the capacity of polissoir, buffer cell can be designed to that 2 to 10 platelets can be accommodated
The position of circle 9.
In addition, the generally also integrated CMP planarization equipment of CMP wafer cleaning equipment of the invention and front equipment end unit module
(EFEM).The manipulator for being responsible for transmission wafer is provided between the CMP wafer cleaning equipment and CMP planarization equipment.
Wafer in CMP planarization equipment after processing is completed, by robotic transfer into cleaning input unit 1 of the invention,
In the presence of transmission manipulator 6 and turning manipulator 7, wafer 9 is successively by megasonic cleaning unit 2, brush scrubbing unit 3, scrub
Unit 4 and drying unit 5, complete entire cleaning process, and the manipulator in EFEM finally takes wafer 9 away in drying unit 5.
The integrated CMP planarization equipment can polish 2 or more wafers in varying numbers simultaneously, of the invention in order to prevent
After CMP wafer cleaning equipment breaks down, wafer after polishing can not secure storage, in CMP wafer cleaning equipment of the invention
Middle design has buffer cell 8.It is different according to the work capacity of integrated CMP planarization equipment, it can be interim in the buffer cell 8
2 are stored to 10 wafers, design has water injector in buffer cell 8, prevents wafer not cleaned and dries.
As embodiment, as shown in figure 3, cleaning input unit 1 and wafer polishing channel 10 can be designed to move
Mode.When having wafer to need to clean in CMP planarization equipment, the wafer bracket 11 cleaned in input unit 1 removes groove body, into
Luggage carries wafer operation, after wafer bracket 11 loads wafer, returns in cleaning input unit 1.Likewise, polished
Wafer is put in the wafer bracket 12 into wafer polishing channel 10 from EFEM unit, and wafer bracket 12 can remove respective distance,
The manipulator of CMP planarization equipment is facilitated to take wafer away.The movement of cleaning wafer bracket 11 and channel wafer bracket 12 either
Simultaneously, it can also be designed to mobile in a manner of mutually indepedent.Such design can shorten manipulator in CMP planarization equipment
Stroke reduces the occupied area of equipment.
As second embodiment, as shown in figure 4, wafer grabbing device 1 can be designed to band wafer turn over function
Mode.A turning manipulator can be saved in this way, but transmission time has increase.Under conditions of cleaning capacity allows
This example can be used.
Crystalline substance is avoided in this way as shown in figure 5, all cleaning units are designed to vertical mode as third embodiment
Circle 9 is overturn when entering and drying unit 5.Wafer transfer unit mechanical structure is simple, and efficiency of transmission is high.When what is vertically dried
When technique requires to can satisfy processing request, this embodiment can be used.
The description of the above specific embodiment is not intended to limit the invention, all within the spirits and principles of the present invention institute
Any modification, equivalent substitution, improvement and etc. of work, should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of CMP wafer cleaning equipment, including cleaning input unit (1), the megasonic cleaning unit (2), first being arranged successively
Brush scrubbing unit (3), the second brush scrubbing unit (4), drying unit (5), transmission manipulator (6) and turning manipulator (7) are located at cleaning
The top of equipment, transmission manipulator (6) includes horizontal movement axis (601), move vertically axis (602) and wafer grabbing device, can
Wafer is transmitted between the units, the wafer in the wafer grabbing device is grabbed and is overturn by turning manipulator (7),
It is characterized in that, further includes buffer cell (8), the buffer cell (8) is located at the front of cleaning input unit (1), can be interim
Storing wafer.
2. CMP wafer cleaning equipment according to claim 1, it is characterised in that including wafer polishing channel (10), be located at
Between the cleaning input unit (1) and the megasonic cleaning unit (2), to facilitate wafer to be chemically-mechanicapolish polished to enter throwing
Cleaning equipment is passed through when light region.
3. CMP wafer cleaning equipment according to claim 2, it is characterised in that wafer polishing channel (10) and cleaning input
Wafer bracket in unit (1) can be removed concurrently or separately, conveniently be loaded wafer operation.
4. CMP wafer cleaning equipment according to claim 1, it is characterised in that the setting water spray dress in buffer cell (8)
It sets, prevents wafer not cleaned and dry.
5. CMP wafer cleaning equipment according to claim 1, it is characterised in that can temporarily be deposited in buffer cell (8)
Put several wafers.
6. CMP wafer cleaning equipment according to claim 1, it is characterised in that wafer, which is in, during cleaning and scrub hangs down
Histogram is to wafer is horizontally oriented during drying.
7. CMP wafer cleaning equipment according to claim 1, it is characterised in that wafer is equal during cleaning, scrub, drying
Vertically.
8. CMP wafer cleaning equipment according to claim 1, it is characterised in that wafer is between horizontal and vertical state
Conversion is realized by transmission manipulator or independent turning manipulator.
9. CMP wafer cleaning equipment according to claim 1, it is characterised in that the transmission manipulator includes wafer crawl
Device one (603) and wafer grabbing device two (604).
10. CMP wafer cleaning equipment according to claim 9, it is characterised in that close to the wafer crawl of drying cell side
Device one (603) carries wafer turn over function, to save turning manipulator.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811200500.4A CN109148341A (en) | 2018-10-16 | 2018-10-16 | A kind of CMP wafer cleaning equipment |
TW107141165A TWI695422B (en) | 2018-10-16 | 2018-11-20 | CMP wafer cleaning equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811200500.4A CN109148341A (en) | 2018-10-16 | 2018-10-16 | A kind of CMP wafer cleaning equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109148341A true CN109148341A (en) | 2019-01-04 |
Family
ID=64811922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811200500.4A Withdrawn CN109148341A (en) | 2018-10-16 | 2018-10-16 | A kind of CMP wafer cleaning equipment |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN109148341A (en) |
TW (1) | TWI695422B (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109755106A (en) * | 2019-01-11 | 2019-05-14 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | A kind of method for cleaning wafer |
CN110026886A (en) * | 2019-01-23 | 2019-07-19 | 杭州众硅电子科技有限公司 | Polishing wafer exchange system and method |
CN110335845A (en) * | 2019-06-24 | 2019-10-15 | 深圳市华星光电半导体显示技术有限公司 | A kind of transfer method of MicroLED chip |
CN110364474A (en) * | 2019-06-28 | 2019-10-22 | 上海提牛机电设备有限公司 | A kind of ceramic disk cleaning manipulator mechanism and cleaning system |
CN112635374A (en) * | 2020-12-09 | 2021-04-09 | 若名芯半导体科技(苏州)有限公司 | Carrying method for cleaning wafer after CMP |
CN112701038A (en) * | 2020-12-23 | 2021-04-23 | 华虹半导体(无锡)有限公司 | CMP machine table linkage method and system |
CN113394147A (en) * | 2021-06-15 | 2021-09-14 | 深圳市创一智能装备有限公司 | Support plate conveying device |
CN113394148A (en) * | 2021-06-15 | 2021-09-14 | 深圳市创一智能装备有限公司 | Solar cell's distributing device |
WO2021189802A1 (en) * | 2020-03-23 | 2021-09-30 | 杭州众硅电子科技有限公司 | Wafer cleaning and drying device |
CN114220748A (en) * | 2022-02-23 | 2022-03-22 | 杭州众硅电子科技有限公司 | Dynamic detection device and chemical mechanical planarization equipment |
WO2024002312A1 (en) * | 2022-06-30 | 2024-01-04 | 杭州众硅电子科技有限公司 | Chemical mechanical planarization apparatus and wafer transfer method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112614802B (en) * | 2021-03-08 | 2021-07-06 | 杭州众硅电子科技有限公司 | Manipulator and method for transporting wafer by CMP (chemical mechanical polishing) cleaning unit |
CN115995405A (en) * | 2021-10-19 | 2023-04-21 | 杭州众硅电子科技有限公司 | Polycrystalline wafer brushing device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10183374B2 (en) * | 2014-08-26 | 2019-01-22 | Ebara Corporation | Buffing apparatus, and substrate processing apparatus |
WO2018043440A1 (en) * | 2016-08-31 | 2018-03-08 | 富士フイルム株式会社 | Processing liquid, substrate cleaning method, and method for producing semiconductor devices |
-
2018
- 2018-10-16 CN CN201811200500.4A patent/CN109148341A/en not_active Withdrawn
- 2018-11-20 TW TW107141165A patent/TWI695422B/en active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109755106A (en) * | 2019-01-11 | 2019-05-14 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | A kind of method for cleaning wafer |
CN110026886A (en) * | 2019-01-23 | 2019-07-19 | 杭州众硅电子科技有限公司 | Polishing wafer exchange system and method |
CN110335845B (en) * | 2019-06-24 | 2021-10-01 | 深圳市华星光电半导体显示技术有限公司 | Transfer method of MicroLED chip |
CN110335845A (en) * | 2019-06-24 | 2019-10-15 | 深圳市华星光电半导体显示技术有限公司 | A kind of transfer method of MicroLED chip |
CN110364474A (en) * | 2019-06-28 | 2019-10-22 | 上海提牛机电设备有限公司 | A kind of ceramic disk cleaning manipulator mechanism and cleaning system |
WO2021189802A1 (en) * | 2020-03-23 | 2021-09-30 | 杭州众硅电子科技有限公司 | Wafer cleaning and drying device |
CN112635374A (en) * | 2020-12-09 | 2021-04-09 | 若名芯半导体科技(苏州)有限公司 | Carrying method for cleaning wafer after CMP |
CN112701038A (en) * | 2020-12-23 | 2021-04-23 | 华虹半导体(无锡)有限公司 | CMP machine table linkage method and system |
CN113394147A (en) * | 2021-06-15 | 2021-09-14 | 深圳市创一智能装备有限公司 | Support plate conveying device |
CN113394148A (en) * | 2021-06-15 | 2021-09-14 | 深圳市创一智能装备有限公司 | Solar cell's distributing device |
CN113394148B (en) * | 2021-06-15 | 2022-09-20 | 深圳市创一智能装备有限公司 | Solar cell's distributing device |
CN114220748A (en) * | 2022-02-23 | 2022-03-22 | 杭州众硅电子科技有限公司 | Dynamic detection device and chemical mechanical planarization equipment |
WO2024002312A1 (en) * | 2022-06-30 | 2024-01-04 | 杭州众硅电子科技有限公司 | Chemical mechanical planarization apparatus and wafer transfer method |
Also Published As
Publication number | Publication date |
---|---|
TW202017019A (en) | 2020-05-01 |
TWI695422B (en) | 2020-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109148341A (en) | A kind of CMP wafer cleaning equipment | |
CN208938938U (en) | A kind of CMP wafer cleaning equipment | |
TWI806931B (en) | chemical mechanical grinding equipment | |
KR100366743B1 (en) | Method of Treatment After Polishing the Wafer and the Polishing Apparatus for Using thereto | |
US6413145B1 (en) | System for polishing and cleaning substrates | |
US6443808B2 (en) | Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device | |
US10192757B2 (en) | Substrate cleaning apparatus and substrate cleaning method | |
US11908720B2 (en) | CMP wafer cleaning equipment, wafer transfer robot and wafer flipping method | |
KR102573572B1 (en) | Wafer cleaning apparatus | |
KR102211040B1 (en) | Substrate cleaning device, substrate cleaning apparatus, cleaned substrate manufacturing method and substrate processing apparatus | |
KR101585144B1 (en) | Plating method plating apparatus and program for controlling plating apparatus | |
US11694889B2 (en) | Chemical mechanical polishing cleaning system with temperature control for defect reduction | |
TWI768827B (en) | chemical mechanical planarization equipment | |
US20160104629A1 (en) | Apparatus and a method for treating a substrate | |
CN102441843A (en) | Internal cleaning structure for CMP (Chemical Mechanical Polishing) machine station and method thereof | |
TW202310972A (en) | Wafer polishing system | |
TWI754017B (en) | Self-cleaning device, substrate processing apparatus and self-cleaning method for cleaning tool | |
WO2004070778A2 (en) | Apparatus and method for polishing semiconductor wafers using one or more pivotable load-and-unload cups | |
KR20110064608A (en) | Wafer cleaning apparatus with spin scrubber and cleaning method thereof | |
KR101610003B1 (en) | Chamber structure of substrate cleaning apparatus | |
JP6456133B2 (en) | Substrate processing equipment | |
KR102134434B1 (en) | Cleaning unit and substrate treating apparatus | |
US20190088509A1 (en) | Break-in apparatus, break-in system and storage media | |
KR101489230B1 (en) | Chamber structure of substrate cleaning apparatus | |
KR102483002B1 (en) | Substrate procesing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WW01 | Invention patent application withdrawn after publication | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190104 |