CN109148247A - Ion implantation device and method - Google Patents
Ion implantation device and method Download PDFInfo
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- CN109148247A CN109148247A CN201710712878.1A CN201710712878A CN109148247A CN 109148247 A CN109148247 A CN 109148247A CN 201710712878 A CN201710712878 A CN 201710712878A CN 109148247 A CN109148247 A CN 109148247A
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- ion
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- doped source
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 87
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 87
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 81
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 53
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims abstract description 51
- 238000001514 detection method Methods 0.000 claims abstract description 38
- 238000012360 testing method Methods 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims description 60
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 53
- -1 IHC ion Chemical class 0.000 claims description 26
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 238000002347 injection Methods 0.000 claims description 25
- 239000007924 injection Substances 0.000 claims description 25
- 239000011261 inert gas Substances 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 10
- 229910015844 BCl3 Inorganic materials 0.000 claims description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005070 sampling Methods 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 22
- 229910052698 phosphorus Inorganic materials 0.000 description 22
- 239000011574 phosphorus Substances 0.000 description 22
- 150000002431 hydrogen Chemical class 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 229910015900 BF3 Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical group Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
Abstract
The invention discloses a kind of ion implantation device and methods, the ion implantation device includes ion source, impurity gas feeding mechanism, the hydrogen feeding mechanism being connected with the vacuum chamber, and deflecting element, for isolating doped source ion beam current and hydrogen ion line from least partly line；Doped source ion beam current detection device in doped source ion beam current transmission path and/or the H rays flow detection device on hydrogen ion beam transfer path, the doped source ion beam current detection device is used to detect the electric current of doped source ion beam current, which is used to detect the electric current of hydrogen ion line.By deflection, the supply of gaseous state doped source and/or hydrogen to learn the ratio of hydrogen and doping source element in line, and can be adjusted by testing result, thus to obtain ideal beam parameters by sampling section or total beam.
Description
Technical field
The present invention relates to a kind of ion implantation device and methods, more particularly to a kind of ion implantation device that line is stable
And method.
Background technique
At present in the ion implantation apparatus of mainstream, need to generally use phosphorus when n-type doping as dopant material.In order to generate
Phosphonium ion line, the most commonly used is ionization phosphine (PH3) to draw phosphonium ion line.However, needing to increase after having ionized phosphine
Quality sorting device is added to separate phosphonium ion and hydrogen ion, and quality sorting device undoubtedly will increase the complexity of equipment, increase
The cost of equipment.Moreover, for larger-size line (such as line of 300mm high), the entrance of quality sorting device and go out
Mouth has to be larger than 300mm, and biggish quality sorting device can generate biggish electromagnetic radiation, thus also need to increase screening arrangement
Guarantee the safety of the producer.And if quality sorting device is not added, phosphorus and hydrogen are injected into substrate, and the beam drawn
The ratio of phosphorus and hydrogen is difficult to be controlled in stream, and the electric current detected is the summation of the amount of phosphorus and hydrogen, is so injected into
Phosphorus in substrate may and not up to required dosage, the inaccuracy control of implantation dosage may generate shadow to the performance of device
It rings.
Summary of the invention
The technical problem to be solved by the present invention is to be made in the prior art using gaseous states doped sources such as phosphine, borines to overcome
Gaseous state doped source and the ratio of hydrogen are difficult to the defect for detecting and controlling in line when for gas to be ionized, and it is steady to provide a kind of line
Fixed ion implantation device and method.
The present invention is to solve above-mentioned technical problem by following technical proposals:
A kind of ion implantation device comprising ion source, the ion source include a vacuum chamber and extraction electrode, spy
Point is that the ion source further includes having:
One impurity gas feeding mechanism, for accommodating gaseous state doped source and gaseous state doped source being transmitted in the vacuum chamber
To generate doping source plasma in the vacuum chamber；
One hydrogen feeding mechanism, it is true at this into the hydrogen in the vacuum chamber for hydrogen to be transmitted in the vacuum chamber
Hydrogen plasma is generated in cavity；
The first flowmeter being connected between the impurity gas feeding mechanism and the vacuum chamber is transferred to this for controlling
The flow of gaseous state doped source in vacuum chamber, the second flowmeter being connected between the hydrogen feeding mechanism and the vacuum chamber are used
In the flow for the hydrogen that control is transferred in the vacuum chamber；
The extraction electrode is for educt beaming flow to be from the vacuum chamber to complete the ion implanting to substrate, wherein in the line
Including doped source ion beam current and hydrogen ion line,
The ion implantation device further include: the deflecting element positioned at the extraction electrode downstream is used for from least partly line
The middle difference according to quality isolates doped source ion beam current and hydrogen ion line；
Doped source ion beam current detection device in doped source ion beam current transmission path and/or it is located at H rays
The H rays flow detection device in transmission path is flowed, the doped source ion beam current detection device is for detecting doped source ion beam
The electric current and/or current density of stream, electric current and/or electric current of the H rays flow detection device for detecting hydrogen ion line are close
Degree.
When using phosphine or hydroboron as gaseous state doped source, other than doped chemical (boron and phosphorus), can also
There is hydrionic generation.In the case where not using quality sorting device, the present invention is total to detect by deflection at least partly line
Line in doped chemical and hydrogen ratio, to guarantee that the doped chemical that is injected into substrate is satisfactory (if do not had
There is this detection, the doped chemical being actually implanted into substrate is usually undesirable, in shortage or excessive).In addition,
The present invention improves the stability of line by being suitably introduced into additional hydrogen, since depositing for hydrogen can generate hydrogen in the vacuum chamber
Plasma, so that the interior temperature distribution of vacuum chamber is uniform, the plasma of generation is more stable.
Preferably, which is used for according to the testing result of hydrogen ion line and the detection of doped source ion beam current
As a result the flow of gaseous state doped source is controlled, and/or, which is used for testing result and doping according to hydrogen ion line
The flow of the testing result control hydrogen of source ion line.
The present invention can not interrupt injection in the case where sampling section line, to detect the ratio of hydrogen and doped source in line
Example, to adjust the amount of gaseous state doped source or hydrogen, to reach ideal injection effect.Alternatively, before injection, sampling whole
Body line, also according to testing result to determine whether needing to adjust the amount of doped source.
Preferably, which further includes a whole beam detection device, for detecting the whole electricity of the line
Stream and/or overall current density.In order to which parameters, the ion implantation apparatus such as the form, the electric current (density) that obtain line may be provided with
For detecting the beam detection device of whole line, such as movable line scanning detection apparatus or fixed faraday
Cup.The parameter (such as electric current) of total beam can be obtained by beam detection device, in this case, it is only necessary to measure hydrogen from
The parameter of beamlet stream or the parameter of doped source ion beam current, it will be able to adjust gaseous state doped source and hydrogen according to testing result
Gas, to obtain ideal line.
Preferably, which is also used to detect the variable quantity of the electric current of doped source ion beam current
And/or the variable quantity of current density, the H rays flow detection device are also used to detect the variable quantity of the electric current of hydrogen ion line
And/or the variable quantity of current density.
Preferably, ion implantation device further include: a controller and a comparator,
The controller is for calculating a ratio and by the ratio respectively compared with first threshold and second threshold, if the ratio
Greater than first threshold, then the comparator is enabled to judge to detect whether number reaches frequency threshold value, if so, sounding an alarm；If it is not,
Enabling the first flowmeter reduces the gaseous state doped source being passed through by first flow threshold value, and/or, enabling the second flowmeter makes to lead to
The hydrogen flowing quantity entered increases second flow threshold value；
If the ratio is less than second threshold, which is used to enable the comparator to judge to detect whether number reaches
Frequency threshold value, if so, sounding an alarm；Increase the gaseous state doped source being passed through by third flow threshold if it is not, enabling the first flowmeter
Value, and/or, enabling the second flowmeter makes the hydrogen flowing quantity being passed through reduce the 4th flow threshold；
If the ratio completes the ion implanting to substrate between second threshold and first threshold, using the line,
Wherein the ratio is the electric current of doped source ion beam current detected and the ratio between the electric current of hydrogen ion line, or is mixed
The ratio between current density and the current density of hydrogen ion line of miscellaneous source ion line, first threshold are greater than second threshold.
Preferably, which preferentially enables the flow that the first flowmeter adjusts the gaseous state doped source.
Preferably, which is hydrogen generator or hydrogen cylinder.
Preferably, which further includes an inert gas feeding mechanism, is used for inert gas delivery to the vacuum chamber
In, which is used to generate inert gas plasma in the vacuum chamber so that the temperature of the vacuum chamber maintains 100
℃-500℃。
Preferably, which is RF ion source or IHC (cathodes heated indirectly by an el) ion source.
Preferably, when which is RF ion source, which is also used to the testing result according to hydrogen ion line
The power of RF power supply is adjusted with the testing result of doped source ion beam current to adjust the degree of ionization of gaseous state doped source；The ion source
When for IHC ion source, which is also used to the detection of testing result and doped source ion beam current according to hydrogen ion line
As a result arc (electric arc) voltage is adjusted to adjust the degree of ionization of gaseous state doped source.
Preferably, which further includes a whole beam detection device, for detecting the whole electricity of the line
Stream and/or overall current density.
Preferably, which is the 0.01-0.5 of the line.(assuming that the electric current of total beam is 10mA, hydrogen line
It is exactly 0.1mA-5mA)
Preferably, which is used to make the uniformity of temperature profile of the inner wall of the vacuum chamber.
Preferably, the flow for being passed through hydrogen is 0.1-50sccm (standard milliliters per minute).
Preferably, which is phosphine or hydroboron, BF3、BCl3,
When wherein, using phosphine, which includes PH2+Line, PH2 +Line and phosphonium ion line.
Preferably, the ion implantation apparatus do not use quality analysis apparatus filtered out from the line of substrate to be implanted hydrogen from
Beamlet stream.
The present invention also provides a kind of ion injection methods, comprising the following steps:
Step S1: gaseous state doped source is passed through in vacuum chamber to generate doping source plasma in the vacuum chamber,
It is characterized in that before executing step S1 or while executing step S1 or performing and also wrapping after step S1
It includes:
Step St: hydrogen is passed through in vacuum chamber to generate hydrogen plasma in the vacuum chamber,
After step S1 and step St further include:
Step S2: the educt beaming flow from the vacuum chamber wherein includes doped source ion beam current and H rays in the line
Stream；
Step S3: according to the different deflection at least partly lines of quality to isolate doped source ion beam current and H rays
Stream detects the electric current of doped source ion beam current and/or the electric current and/or current density of current density and/or hydrogen ion line；
Step S4: the flow of gaseous state doped source and/or the flow of hydrogen are controlled according to testing result, and after use adjustment
Line complete to the ion implanting of substrate.
Preferably, step S4 the following steps are included:
Step S41: a ratio is calculated and by the ratio respectively compared with first threshold and second threshold, if the ratio is greater than
First threshold then enters step S42；If the ratio is less than second threshold, S44 is entered step；If the ratio is between the second threshold
Value first threshold between, then enter step S46, wherein the ratio be doped source ion beam current detected electric current and hydrogen from
The ratio between the current density and the current density of hydrogen ion line of the ratio between electric current of beamlet stream or doped source ion beam current, first
Threshold value is greater than second threshold；
Step S42: judge to detect whether number reaches frequency threshold value, if so, sounding an alarm；If it is not, entering step S43；
Step S43: reducing the gaseous state doped source being passed through by first flow threshold value, and/or, increase the hydrogen flowing quantity being passed through
Second flow threshold value, then return step S3；
Step S44: judge to detect whether number reaches frequency threshold value, if so, sounding an alarm；If it is not, entering step S45；
Step S45: increasing the gaseous state doped source being passed through by third flow threshold, and/or, reduce the hydrogen flowing quantity being passed through
4th flow threshold, then return step S3；
Step S46: the ion implanting to substrate is completed using the line, then return step S3.
Preferably, the flow of the gaseous state doped source is preferentially adjusted in step S43 and step S45.
Preferably, step S3 includes:
Step S31: deflection at least partly line detects doped source to isolate doped source ion beam current and hydrogen ion line
The electric current of ion beam current and/or the electric current of hydrogen ion line；
Step S32: judge the variable quantity of the electric current of doped source ion beam current whether reach the first change threshold and/or hydrogen from
Whether the variable quantity of the electric current of beamlet stream reaches the second change threshold, if so, entering step S41；If it is not, entering step S46.
Preferably, before step S1 the following steps are included:
Step Sp: inert gas is passed through in vacuum chamber and inert element plasma is formed in the vacuum chamber, should
Inert gas is used to generate inert gas plasma in the vacuum chamber so that the temperature of the vacuum chamber maintains 100 DEG C -500
℃。
Preferably, the 0.01-0.5 that the hydrogen ion line in line is the line is controlled in step S4.
Preferably, the flow for being passed through hydrogen is 0.1-50sccm, and/or,
The gaseous state doped source is phosphine or hydroboron, BF3、BCl3,
When wherein, using phosphine, which includes PH2+Line, PH2 +Line and phosphonium ion line.
It preferably, does not include that halved tie stream carries out quality analysis to filter out from the line of substrate to be implanted before ion implanting
The step of hydrogen ion line.
Preferably, the power in step S4 also according to the RF power supply of testing result adjustment RF ion source is to adjust gaseous state doping
The degree of ionization in source adjusts the arc voltage of IHC ion source to adjust the degree of ionization of gaseous state doped source.
Preferably, in step S3 further include: detect the overall current and/or overall current density of the line.
On the basis of common knowledge of the art, above-mentioned each optimum condition, can any combination to get each preferable reality of the present invention
Example.
The reagents and materials used in the present invention are commercially available.
The positive effect of the present invention is that:
It 1, can be by sampling section or total beam, to learn hydrogen in line and mix by deflection in the present invention
The ratio of miscellaneous source element, and the supply of gaseous state doped source and/or hydrogen is adjusted by testing result, more to be managed
The beam parameters thought.
2, it introduces after hydrogen, the plasma in vacuum chamber is more stable, and the line thus drawn also can be more uniform.
And by experiment, hydrogen is injected while injecting doped chemical, also has optimization function to the passivation effect of substrate, for solar energy
For the production of battery, transfer efficiency can improve 0.1-0.2%.
3, it is discovered by experiment that the Temperature Distribution for introducing vacuum chamber after hydrogen is more uniform, the deposition of vacuum cavity wall
Doped source significantly reduce, inner wall more cleans.
4, the ion implantation device be do not include mass analyzing magmet that usual ion implantation device has, thus equipment
Cheap, system simplifies, it is most important that without considering interference of the high-intensity magnetic field to neighbouring equipment.And by being known to experiment
Make no mass analyzing magmet, battery sheet resistance will not be influenced by introducing hydrogen, not had an impact to the electrical property of injection substrate.
5, the line of different quality has different deflection radius, can separate the different line of quality whereby, from
And each line separated is detected, to obtain the ratio of each difference line in total beam.For being adopted in the present invention
It the case where with phosphine or hydroboron, not only can be with separation of phosphorus hydrogen or boron hydrogen line, additionally it is possible to separation of phosphorus line or boron line
In Cluster Beam (such as 2 phosphonium ions Cluster Beam or 4 phosphonium ions Cluster Beam, this is because ionization phosphine
Energy it is lower caused by), thus the present invention be capable of detecting when that Cluster Beam accounts for the ratio of whole line, thus for difference
Injection occasion (High dose implantation perhaps low dosage injection or the injection of low energy) adjust the ionization energy of gaseous state doped source
Amount (the power perhaps arc voltage for adjusting RF power supply) so that ionize out more or less cluster ions as needed.
Detailed description of the invention
Fig. 1 is the connection signal of the vacuum chamber of the embodiment of the present invention 1, impurity gas feeding mechanism and hydrogen feeding mechanism
Figure.
Fig. 2 is the deflecting element of the embodiment of the present invention 1 and the schematic diagram of beam detection device.
Fig. 3 is the top view of Fig. 2.
Fig. 4 is the main view of Fig. 2.
Fig. 5 is the right view of Fig. 2.
Fig. 6 is the schematic diagram after phosphonium ion line and hydrogen ion line are separated.
Fig. 7 is the flow chart of ion injection method described in the embodiment of the present invention 4.
Specific embodiment
The present invention is further illustrated below by the mode of embodiment, but does not therefore limit the present invention to the reality
It applies among a range.In the following examples, the experimental methods for specific conditions are not specified, according to conventional methods and conditions, or according to quotient
The selection of product specification.
Embodiment 1
With reference to Fig. 1-Fig. 6, ion implantation device described in the present embodiment comprising ion source, the ion source include one true
Cavity 1 and extraction electrode, the ion source further include having:
One impurity gas feeding mechanism 2, for accommodating gaseous state doped source and gaseous state doped source being transmitted to the vacuum chamber 1
In in the vacuum chamber 1 generate doping source plasma；
One hydrogen feeding mechanism 3, for hydrogen to be transmitted in the vacuum chamber 1, into the hydrogen in the vacuum chamber 1 at this
Hydrogen plasma is generated in vacuum chamber 1；
The first flowmeter 41 being connected between the impurity gas feeding mechanism 2 and the vacuum chamber 1 is transmitted for controlling
The flow of gaseous state doped source into the vacuum chamber, the second flow being connected between the hydrogen feeding mechanism 3 and the vacuum chamber 1
Meter 42, for controlling the flow for the hydrogen being transferred in the vacuum chamber 1；
The extraction electrode is for educt beaming flow to be from the vacuum chamber to complete the ion implanting to substrate, wherein in the line
Including doped source ion beam current and hydrogen ion line,
The ion implantation device further include: the deflecting element 5 positioned at the extraction electrode downstream, for dividing from the line of part
Separate out doped source ion beam current and hydrogen ion line；
Doped source ion beam current detection device 61 in doped source ion beam current transmission path and it is located at H rays
Flow transmission path on H rays flow detection device 62, the doped source ion beam current detection device 61 for detect doped source from
The electric current of beamlet stream, the H rays flow detection device 62 are used to detect the electric current of hydrogen ion line.In the present embodiment, it uses
Phosphine mainly includes phosphorus line and hydrogen line in the line, passes through (a pair of opposed horse of deflecting element 5 as gaseous state doped source
Horsehoe magnet) effect, phosphorus line 71 and hydrogen line 72 are separated from whole line, with reference to Fig. 2-Fig. 6, the line direction of motion
Vertical with magnetic direction, the deflection direction of line is then vertical with the direction of motion and magnetic direction, and phosphorus line 71 is than heavier deflection
Angle is smaller, and it is bigger that hydrogen line 72 compares light deflection angle.By the detection to phosphorus line and hydrogen line, entirety could be aware that
The ratio of phosphorus and hydrogen in line controls first flowmeter 41 and second flowmeter 42 thus according to testing result to adjust phosphine
With the amount of hydrogen so that the ratio of phosphorus and hydrogen meets injection demand in whole line.If testing result is shown in line
The ratio of hydrogen line is more than setting value, then being reduced by the flow of hydrogen, while increasing the flow of phosphine.
The deflecting element 5 and beam detection device 61,62 and substrate to be implanted are in different regions, only serve inspection
The effect for surveying line, does not influence the injection of hybrid ionic line on substrate.
After used a period of time, discovery vacuum cavity wall is cleaner, rare solid deposits, base on extraction electrode
This falls without fixed residue.
Embodiment 2
The basic principle of embodiment 2 is same as Example 1, the difference is that: the ion source further includes an inert gas
Feeding mechanism, for, into the vacuum chamber, the inert gas to be for generating indifferent gas in the vacuum chamber by inert gas delivery
Bulk plasmon is so that the temperature of the vacuum chamber maintains 400 DEG C.Argon gas is used in the present embodiment.Remaining does not refer to place reference
Embodiment 1.
Embodiment 3
The basic principle of embodiment 3 is same as Example 1, the difference is that: the ion implantation device further includes one whole
Body beam detection device, for detecting the overall current of the line, the method for covering entire beam width using one in the present embodiment
The glass of beam detection device as a whole is drawn, and is fixed at the most downstream in beam transfer path, is not had when in injection station
When having substrate, which can receive whole lines, when inject has substrate to be processed in station, Faraday cup not work
Make.In this embodiment, the electric current of hydrogen ion line is detected only with H rays flow detection device.Pass through Faraday cup pair
The detection of whole line and the testing result of hydrogen ion line still could be aware that phosphorus line and hydrogen line in whole line
Respectively shared ratio, and the supply of phosphine and hydrogen is adjusted according to testing result.
Remaining does not refer to place referring to embodiment 1.
Embodiment 4
The basic principle of embodiment 4 is same as Example 1, the difference is that:
Ion implantation device further include: a controller and a comparator,
The controller is for calculating a ratio and by the ratio respectively compared with first threshold and second threshold, if the ratio
Greater than first threshold, then the comparator is enabled to judge to detect whether number reaches frequency threshold value, if so, sounding an alarm；If it is not,
Enabling the first flowmeter reduces the phosphine being passed through by first flow threshold value, and enables the hydrogen that the second flowmeter makes to be passed through
Flow increases second flow threshold value；
If the ratio is less than second threshold, which is used to enable the comparator to judge to detect whether number reaches
Frequency threshold value, if so, sounding an alarm；Increase the phosphine being passed through by third flow threshold if it is not, enabling the first flowmeter；
If the ratio completes the ion implanting to substrate between second threshold and first threshold, using the line,
Wherein the ratio is the electric current of phosphonium ion line detected and the ratio between the electric current of hydrogen ion line, and first threshold is big
In second threshold.
Ion injection method described in the present embodiment the following steps are included:
Step 101, phosphine and hydrogen are passed through into vacuum chamber.
Step 102, plasma is generated in the vacuum chamber, including phosphorus plasma and hydrogen plasma, by drawing
Electrode educt beaming flow out includes phosphonium ion line and hydrogen ion line in the line.
Step 103, deflector line is with separation of phosphorus line and hydrogen line.
Step 104, the electric current of phosphonium ion line and the electric current of hydrogen ion line are detected.
Step 105, phosphorus hydrogen ratio is calculated, which is the ratio between phosphonium ion line and the electric current of hydrogen ion line.
Step 106, by the ratio compared with first threshold and second threshold, if the ratio is greater than first threshold, into step
Rapid 107；If the ratio is less than second threshold, 109 are entered step；If falling between, 111 are entered step.
Step 107, judge to detect whether number reaches frequency threshold value, if so, entering step 113；If it is not, entering step
108。
Step 108, it adjusts first flowmeter and reduces the supply of phosphine, while adjusting the confession that second flowmeter increases hydrogen
Ying Liang, and 112 are entered step, waiting detects next time.
Step 109, judge to detect whether number reaches frequency threshold value, if so, entering step 113；If it is not, entering step
110。
Step 110, it adjusts first flowmeter and increases the supply of phosphine, and enter step 112, waiting detects next time.
Step 111, it completes to enter step 112 later to the ion implanting of substrate using current line.
Step 113, indicate that the ratio of phosphorus hydrogen after repeated detection is adjusted can not still fall into first threshold and second threshold
Between section, it is understood that there may be hardware problem, warning note manual intervention.
Remaining does not refer to place referring to embodiment 1.
Embodiment 5
The basic principle and embodiment 4 of embodiment 5 are consistent, the difference is that:
After having detected phosphonium ion line and hydrogen ion line, first judge the electric current of phosphonium ion line variable quantity whether
Whether the variable quantity for reaching the electric current of the first change threshold and hydrogen ion line reaches the second change threshold, if so, entering back into step
Rapid 105, ion implanting is otherwise carried out using current line.That is, if the curent change of detection is little, not to current ginseng
Number is adjusted, and only when variation reaches a certain level, just compares and has judged whether the line of variation also is compliant with injection and wants
It asks.
Remaining does not refer to place referring to embodiment 4.
Embodiment 6
RF ion source is used in embodiment 6, when using phosphine, according to the difference of degree of ionization, the doped source ion beam current
In will include the different PH of ratio2+Line, PH2+Line and phosphonium ion line include the ion of a phosphorus in phosphonium ion line again
The ion formed with cluster, for example, 4 phosphorus cluster or 2 phosphorus cluster.In some injection occasions, it would be desirable to have certain
The cluster ions of ratio exist, and the quality of the quality of these cluster ions and single phosphonium ion is different, can be with by deflection
Cluster Beam is separated from phosphonium ion line, it is possible thereby to the RF power supply of RF ion source is adjusted by testing result
Power complies with the demand of injection condition to adjust the amount of cluster ions to adjust the degree of ionization phosphine with this.
Embodiment 7
The basic principle of embodiment 7 is consistent with embodiment 6, the difference is that: using IHC ion source, according to inspection
Result is surveyed to adjust arc voltage to adjust the degree of ionization of phosphine, to adjust ratio of the cluster ions in entire line.
The present invention is separated the different line of quality by deflection from whole mixing line, it is possible thereby to detect
Doped source ion beam current accounts for the ratio of whole line out, consequently facilitating amendment in real time, so that whole line meets injection condition
Demand.In addition, being suitably passed through some hydrogen using the gaseous states doped source such as phosphine, boron fluoride, not influencing not only to infuse
Enter the electrical property of substrate, additionally it is possible to the plasma preferably in maintenance vacuum chamber, while there are also certain cleanings to vacuum chamber
Effect.
Although specific embodiments of the present invention have been described above, it will be appreciated by those of skill in the art that these
It is merely illustrative of, protection scope of the present invention is defined by the appended claims.Those skilled in the art is not carrying on the back
Under the premise of from the principle and substance of the present invention, many changes and modifications may be made, but these are changed
Protection scope of the present invention is each fallen with modification.
Claims (18)
1. a kind of ion implantation device comprising ion source, the ion source include a vacuum chamber and extraction electrode, feature
It is, which further includes having:
One impurity gas feeding mechanism, for accommodate gaseous state doped source and by gaseous state doped source be transmitted in the vacuum chamber with
Doping source plasma is generated in the vacuum chamber；
One hydrogen feeding mechanism, for hydrogen to be transmitted in the vacuum chamber, into the hydrogen in the vacuum chamber in the vacuum chamber
Middle generation hydrogen plasma；
The first flowmeter being connected between the impurity gas feeding mechanism and the vacuum chamber is transferred to the vacuum for controlling
The flow of gaseous state doped source in chamber, the second flowmeter being connected between the hydrogen feeding mechanism and the vacuum chamber, for controlling
Make the flow for the hydrogen being transferred in the vacuum chamber；
The extraction electrode is used for the educt beaming flow from the vacuum chamber
Doped source ion beam current and hydrogen ion line,
The ion implantation device further include: the deflecting element positioned at the extraction electrode downstream, for dividing from least partly line
Separate out doped source ion beam current and hydrogen ion line；
It doped source ion beam current detection device in doped source ion beam current transmission path and/or is spread positioned at H rays
H rays flow detection device on defeated path, the doped source ion beam current detection device is for detecting doped source ion beam current
Electric current and/or current density, the H rays flow detection device are used to detect the electric current and/or current density of hydrogen ion line.
2. ion implantation device as described in claim 1, which is characterized in that the first flowmeter is used for according to hydrogen ion line
Testing result and doped source ion beam current testing result control gaseous state doped source flow, and/or, the second flowmeter use
In the flow for controlling hydrogen according to the testing result of hydrogen ion line and the testing result of doped source ion beam current.
3. ion implantation device as described in claim 1, which is characterized in that the doped source ion beam current detection device is also used to
The variable quantity of the electric current of doped source ion beam current and/or the variable quantity of current density are detected, the H rays flow detection device is also
For detecting the variable quantity of the electric current of hydrogen ion line and/or the variable quantity of current density.
4. ion implantation device as described in claim 1, which is characterized in that ion implantation device further include: a controller and
One comparator,
The controller is for calculating a ratio and by the ratio respectively compared with first threshold and second threshold, if the ratio is greater than
First threshold then enables the comparator to judge to detect whether number reaches frequency threshold value, if so, sounding an alarm；If it is not, enabling
The first flowmeter reduces the gaseous state doped source being passed through by first flow threshold value, and/or, enable what the second flowmeter made to be passed through
Hydrogen flowing quantity increases second flow threshold value；
If the ratio is less than second threshold, which is used to enable the comparator to judge to detect whether number reaches number
Threshold value, if so, sounding an alarm；Increase the gaseous state doped source being passed through by third flow threshold if it is not, enabling the first flowmeter,
And/or enabling the second flowmeter makes the hydrogen flowing quantity being passed through reduce the 4th flow threshold；
If the ratio completes the ion implanting to substrate between second threshold and first threshold, using the line,
Wherein the ratio is the ratio between the electric current of doped source ion beam current detected and the electric current of hydrogen ion line or doped source
The ratio between current density and the current density of hydrogen ion line of ion beam current, first threshold are greater than second threshold,
Preferably, which preferentially enables the flow that the first flowmeter adjusts the gaseous state doped source.
5. ion implantation device as described in claim 1, which is characterized in that the comparator is also used to judge doped source ion beam
Whether the variable quantity whether variable quantity of the electric current of stream reaches the electric current of the first change threshold and/or hydrogen ion line reaches second
Change threshold, if so, enabling the controller calculates the ratio；If it is not, then completing the ion implanting to substrate using the line.
6. the ion implantation device as described in any one of claim 1-5, which is characterized in that the hydrogen feeding mechanism is hydrogen
Gas generator or hydrogen cylinder；And/or
The ion source further includes an inert gas feeding mechanism, is used for by inert gas delivery into the vacuum chamber, the indifferent gas
Body is used to generate inert gas plasma in the vacuum chamber so that the temperature of the vacuum chamber maintains 100 DEG C -500 DEG C.
7. the ion implantation device as described in any one of claim 1-5, which is characterized in that the hydrogen ion line is the beam
The 0.01-0.5 of stream.
8. the ion implantation device as described in any one of claim 1-5, which is characterized in that the hydrogen plasma is for making
The uniformity of temperature profile of the inner wall of the vacuum chamber,
And/or the ion source is RF ion source or IHC ion source, it is preferable that when the ion source is RF ion source, the RF ion
Source be also used to according to the power of the testing result of hydrogen ion line and the testing result of doped source ion beam current adjustment RF power supply with
Adjust the degree of ionization of gaseous state doped source；When the ion source is IHC ion source, which is also used to according to H rays
The testing result of stream and the testing result of doped source ion beam current adjustment arc voltage to adjust the degree of ionization of gaseous state doped source,
And/or the ion implantation device further includes a whole beam detection device, for detect the line overall current and/
Or overall current density.
9. the ion implantation device as described in any one of claim 1-5, which is characterized in that the flow for being passed through hydrogen is
0.1-50sccm, and/or, which is phosphine or hydroboron, BF3、BCl3,
When wherein, using phosphine, which includes PH2+Line, PH2 +Line and phosphonium ion line.
10. the ion implantation device as described in any one of claim 1-5, which is characterized in that the ion implantation apparatus is not
Hydrogen ion line is filtered out from the line of substrate to be implanted using quality analysis apparatus.
11. a kind of ion injection method, comprising the following steps:
Step S1: gaseous state doped source is passed through in vacuum chamber to generate doping source plasma in the vacuum chamber,
It is characterized in that, before executing step S1 or while executing step S1 or after performing step S1 further include:
Step St: hydrogen is passed through in vacuum chamber to generate hydrogen plasma in the vacuum chamber,
After step S1 and step St further include:
Step S2: the educt beaming flow from the vacuum chamber wherein includes doped source ion beam current and hydrogen ion line in the line；
Step S3: deflection at least partly line is to isolate doped source ion beam current and hydrogen ion line, detection doping source ion
The electric current and/or current density of line and/or the electric current and/or current density of hydrogen ion line；
Step S4: the flow of gaseous state doped source and/or the flow of hydrogen are controlled according to testing result, and uses beam adjusted
Stream completes the ion implanting to substrate.
12. ion injection method as claimed in claim 11, which is characterized in that step S4 the following steps are included:
Step S41: calculating a ratio and by the ratio respectively compared with first threshold and second threshold, if the ratio is greater than first
Threshold value then enters step S42；If the ratio is less than second threshold, S44 is entered step；If the ratio between second threshold and
Between first threshold, then S46 is entered step, wherein the ratio is the electric current and H rays of doped source ion beam current detected
The ratio between the current density and the current density of hydrogen ion line of the ratio between electric current of stream or doped source ion beam current, first threshold
Greater than second threshold；
Step S42: judge to detect whether number reaches frequency threshold value, if so, sounding an alarm；If it is not, entering step S43；
Step S43: reducing the gaseous state doped source being passed through by first flow threshold value, and/or, so that the hydrogen flowing quantity being passed through is increased by second
Flow threshold, then return step S3；
Step S44: judge to detect whether number reaches frequency threshold value, if so, sounding an alarm；If it is not, entering step S45；
Step S45: increasing the gaseous state doped source being passed through by third flow threshold, and/or, so that the hydrogen flowing quantity being passed through is reduced the 4th
Flow threshold, then return step S3；
Step S46: completing the ion implanting to substrate using the line, then return step S3,
Preferably, the flow of the gaseous state doped source is preferentially adjusted in step S43 and step S45.
13. ion injection method as claimed in claim 12, which is characterized in that step S3 includes:
Step S31: deflection at least partly line is to isolate doped source ion beam current and hydrogen ion line, detection doping source ion
The electric current of line and/or the electric current of hydrogen ion line；
Step S32: judge whether the variable quantity of the electric current of doped source ion beam current reaches the first change threshold and/or H rays
Whether the variable quantity of the electric current of stream reaches the second change threshold, if so, entering step S41；If it is not, entering step S46.
14. the ion injection method as described in any one of claim 11-13, which is characterized in that include before step S1
Following steps:
Step Sp: inert gas is passed through in vacuum chamber and inert element plasma, the inertia are formed in the vacuum chamber
Gas is used to generate inert gas plasma in the vacuum chamber so that the temperature of the vacuum chamber maintains 100 DEG C -500 DEG C.
15. the ion injection method as described in any one of claim 11-13, which is characterized in that control beam in step S4
The hydrogen ion line is the 0.01-0.5 of the line in stream.
16. the ion injection method as described in any one of claim 11-13, which is characterized in that be passed through the flow of hydrogen
For 0.1-50sccm, and/or,
The gaseous state doped source is phosphine or hydroboron, BF3、BCl3,
When wherein, using phosphine, which includes PH2+Line, PH2 +Line and phosphonium ion line.
17. the ion injection method as described in any one of claim 11-13, which is characterized in that do not wrapped before ion implanting
It includes halved tie stream and carries out the step of quality analysis from the line of substrate to be implanted to filter out hydrogen ion line.
18. the ion injection method as described in any one of claim 11-13, which is characterized in that in step S4 also according to
The power of the RF power supply of testing result adjustment RF ion source is to adjust the degree of ionization of gaseous state doped source or adjust IHC ion source
Arc voltage to adjust the degree of ionization of gaseous state doped source,
And/or in step S3 further include: detect the overall current and/or overall current density of the line.
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| CN201721039656.XU Active CN207269015U (en) | 2017-06-16 | 2017-08-18 | Ion implantation device |
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| CN111725091A (en) * | 2019-03-22 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Method and device for optimizing process flow, storage medium and semiconductor processing equipment |
| CN114038948A (en) * | 2021-05-11 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Red light epitaxial layer, etching repair method thereof, LED chip and electronic equipment |
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| CN109148246B (en) * | 2017-06-16 | 2024-02-02 | 上海凯世通半导体股份有限公司 | Ion implantation apparatus and method |
| CN115602513B (en) * | 2021-09-15 | 2023-08-29 | 和舰芯片制造(苏州)股份有限公司 | Method and system for monitoring effective gas utilization rate of ion implanter |
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| CN109148247B (en) | 2024-01-16 |
| CN207269015U (en) | 2018-04-24 |
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