CN109142206B

CN109142206B - Silicon chip corrosion device

Info

Publication number: CN109142206B
Application number: CN201811167918.XA
Authority: CN
Inventors: 庄须叶
Original assignee: North Electronic Research Institute Anhui Co., Ltd.
Current assignee: Anhui North Microelectronics Research Institute Group Co ltd
Priority date: 2018-10-08
Filing date: 2018-10-08
Publication date: 2021-02-19
Anticipated expiration: 2038-10-08
Also published as: CN109142206A

Abstract

The invention provides a silicon wafer corrosion device, which is characterized in that: it includes water bath (1), be equipped with a pair of wallboard (5) in water bath (1), the cross-over connection has corrosion tank (2) between a pair of wallboard (5), be equipped with etchant (3) in corrosion tank (2), set up silicon chip and corrode frame (4), silicon chip corrodes frame including hypoplastron (4 a) that immerses etchant (3) and strides upper plate (4 b) of establishing in corrosion tank (2) top, be equipped with a set of pull rod (4 c) between last, hypoplastron, be equipped with a set of silicon chip supporting seat (4 d) on hypoplastron (4 a), the equipartition has a set of elevating gear (4 e) on upper plate (4 b). The invention has simple structure and convenient use, and can ensure that the silicon wafer is always kept in a horizontal state in the corrosive liquid.

Description

Silicon chip corrosion device

The technical field is as follows:

the invention relates to the field of chip production, in particular to a silicon wafer etching device.

Background art:

when silicon isotropic etching is carried out, the roundness of a hemispherical cavity on a silicon wafer is greatly influenced by the placing position of the silicon wafer, and the roundness uniformity of the hemispherical cavity on the silicon wafer is poor due to unbalanced convection of corrosive liquid and the quality of the hemispherical cavity is influenced by the obliquely placed silicon wafer, so that the whole silicon wafer is adversely influenced. Although some etching devices with adjustable levelness exist in the prior art, most etching devices are large in size and high in manufacturing cost, and are not suitable for levelness adjustment in silicon isotropic etching.

The invention content is as follows:

the invention provides a silicon wafer etching device for overcoming the defects in the prior art.

The invention provides the following technical scheme:

a silicon wafer etching device is characterized in that: it includes the water bath, is equipped with a pair of wallboard in the water bath, and the cross-over connection has the etch pit between a pair of wallboard, is equipped with the etchant solution in the etch pit, sets up silicon chip and corrodes the frame, and the silicon chip corrodes the frame including the hypoplastron that immerses the etchant solution and strides the upper plate of establishing in the etch pit top, is equipped with a set of pull rod on the lower plate, and the upper end and the upper plate of pull rod are connected, is equipped with a set of silicon chip supporting seat on the lower plate, and the equipartition has a set of elevating gear on the upper plate.

On the basis of the technical scheme, the following further technical scheme can be provided:

a group of pins are uniformly distributed on the lower plate outside the silicon wafer supporting seat, and a stop strip is further arranged on one pin.

And the wall of the water bath tank below the wall plate is provided with an overflow hole.

The wall between the corrosion tank and the bottom of the water bath tank is provided with a clapboard, and the clapboard is provided with a group of through holes.

The outer side of the water bath box is also provided with an outer box with a large volume, the lower part of the box wall of the outer box is provided with a water outlet, and the water inlet end of the water inlet pipe extends out of the outer box and then is communicated with a water source.

A group of notches are arranged on the upper plate.

The lifting device is a screw rod or a screw.

The invention has the advantages that:

the invention has simple structure and convenient use, and can ensure that the silicon wafer is always kept in a horizontal state in the corrosive liquid.

Description of the drawings:

FIG. 1 is a schematic view of the overall structure of the present invention;

FIG. 2 is a schematic diagram of the structure of the silicon wafer etching rack of FIG. 1.

The specific implementation mode is as follows:

as shown in fig. 1 and 2, the silicon wafer etching device comprises a water bath tank 1, wherein wall plates 5 are respectively arranged on the upper parts of the tank walls on the two sides of the water bath tank 1, the wall plates 5 are horizontally distributed and are mutually symmetrical, a certain distance is arranged between the two wall plates 5, and the two ends of each wall plate 5 extend out of the tank wall of the water bath tank 1.

The corrosion tank 2 is arranged, a flange 2a which is in lap joint with the wall plate 5 is arranged at the opening part at the upper end of the corrosion tank 2, the tank body of the corrosion tank 2 is positioned in the water bath tank 1 below the wall plate 5, and corrosive liquid 3 is filled in the tank body.

The wall of the water bath tank 1 below the wall plate 5 is provided with an overflow hole 1 a. The height of the overflow holes 1a is higher than the liquid level of the corrosive liquid 3. A partition board 1b which is horizontally distributed is arranged on the box wall between the corrosion tank 2 and the bottom of the water bath box 1, and a group of through holes 1c are arranged on the partition board 1 b. A water inlet pipe 7 is communicated with one side of the box wall below the orifice plate 1 b. The cooling water flowing into the water bath box from the water inlet pipe passes through the shunting of the through holes on the partition plate, and the tank body can be uniformly cooled outside the tank body of the corrosion tank by being uniformly wrapped.

The outer side of the water bath tank 1 is also provided with an outer tank 6 with a large volume, the lower part of the tank wall of the outer tank 6 is provided with a water outlet 6a, and the water inlet end of the water inlet pipe 7 extends out of the tank wall of the outer tank 6 and then is communicated with a water source. The outer box 6 and the box bottom of the water bath box 1 are of an integrated structure.

Set up a silicon chip and corrode frame 4, silicon chip corrode frame 4 include the upper plate 4b of a rectangle, wear to be equipped with elevating gear respectively on the four corners of upper plate 4b, elevating gear can be lead screw 4e or the screw that the upper end has the handle, what adopt in this application is lead screw 4e that the upper end has the handle. The lower end of the screw 4e is in contact with the upper surface of the wall plate 5 so that the upper plate 4b can straddle over the upper end of the etching bath 2. The posture of the upper plate can be adjusted by rotating the upper handle of the screw rod. The upper plate 4a between two adjacent screw rods 4e is also provided with a semicircular notch 4f, the notch is convenient for a worker to grasp the upper plate, and meanwhile, the worker can observe the condition in the lower corrosion groove 2 through the notch.

A circular lower plate 4a is arranged below the upper plate 4b, and a circular hole 4j is coaxially distributed on the lower plate 4 a. The lower plate is enabled to invade corrosive liquid through the round hole, so that the corrosion is more stable. A group of silicon wafer supporting seats 4d are uniformly distributed on the lower plate 4a outside the round hole 4j, a group of pins 4g are uniformly distributed on the lower plate 4a outside the silicon wafer supporting seats 4d, and the height of each pin 4g is larger than that of each silicon wafer supporting seat 4 d. So as to limit the silicon wafer placed on the silicon wafer supporting seat in the horizontal direction. One pin 4g is also provided with a strip-shaped blocking strip 4h, the horizontal height of the blocking strip 4h is greater than that of the silicon wafer supporting seat 4d, and the blocking strip 4h extends to the circle center of the lower plate 4 a. The silicon wafer placed on the silicon wafer supporting seat is longitudinally limited through the stop strip 4 h. A group of longitudinally distributed pull rods 4c are uniformly distributed on the lower plate 4a outside the pin 4g, and the upper ends of the pull rods 4c are connected with the lower surface of the upper plate 4 b.

The using method comprises the following steps:

firstly, a test piece is placed on a silicon wafer supporting seat of a silicon wafer corrosion frame, then a level meter is placed on the test piece, then a lower plate of the silicon wafer corrosion frame is placed in a corrosion groove, then the condition of the level meter is observed, and a regulating screw rod enables the level meter to display that the test piece is in a horizontal state.

Then remove the corrosion tank with the hypoplastron of silicon chip corrosion frame, take off test piece and spirit level, then place the silicon chip on the silicon chip supporting seat of silicon chip corrosion frame, put the hypoplastron of silicon chip corrosion frame into the corrosion tank again, pour into the corrosive liquid in the corrosion tank again for the silicon chip is in soaking the corrosive liquid completely, so that the corrosive liquid corrodes the operation to the silicon chip, and the inlet tube can carry out lasting cooling to the corrosion tank with cooling water 8 injection water bath case when corroding going on.

Claims

1. A silicon wafer etching device is characterized in that: the silicon wafer etching device comprises a water bath box (1), wherein a pair of wall plates (5) are arranged in the water bath box (1), an etching groove (2) is bridged between the wall plates (5), etching liquid (3) is arranged in the etching groove (2), a silicon wafer etching frame (4) is arranged, the silicon wafer etching frame comprises a lower plate (4 a) immersed in the etching liquid (3) and an upper plate (4 b) bridged above the etching groove (2), a group of pull rods (4 c) are arranged on the lower plate (4 a), the upper ends of the pull rods (4 c) are connected with the upper plate (4 b), a group of silicon wafer supporting seats (4 d) are arranged on the lower plate (4 a), a group of pins (4 g) are uniformly distributed on the lower plate (4 a) at the outer side of the silicon wafer supporting seats (4 d), the height of each pin (4 g) is larger than that of each silicon wafer supporting seat (4 d), so that the silicon wafers placed on the silicon wafer supporting, a blocking strip (4 h) is further arranged on one pin (4 g), the horizontal height of the blocking strip (4 h) is greater than the height of the silicon wafer supporting seat (4 d), the blocking strip (4 h) extends to the circle center of the lower plate (4 a), and the silicon wafer placed on the silicon wafer supporting seat is longitudinally limited through the blocking strip (4 h);

an overflow hole (1 a) is arranged on the wall of the water bath tank (1) below the wall plate (5);

a group of lifting devices are uniformly distributed on the upper plate (4 b), a partition plate (1 b) is arranged on the box wall between the corrosion tank (2) and the bottom of the water bath box (1), a group of through holes (1 c) are formed in the partition plate (1 b), and a water inlet pipe (7) is communicated with one side of the box wall below the partition plate (1 b); the outer side of the water bath box (1) is also provided with an outer box (6) with a large volume, the lower part of the box wall of the outer box (6) is provided with a water outlet (6 a), and the water inlet end of the water inlet pipe (7) extends out of the outer box (6) and then is communicated with a water source.

2. The silicon wafer etching apparatus according to claim 1, wherein: the upper plate (4 b) is provided with a group of gaps (4 f).

3. The silicon wafer etching apparatus according to claim 1, wherein: the lifting device is a screw rod (4 e) or a screw.