CN109136860A - 一种表面增强拉曼基底及其制备方法 - Google Patents
一种表面增强拉曼基底及其制备方法 Download PDFInfo
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- CN109136860A CN109136860A CN201811089356.1A CN201811089356A CN109136860A CN 109136860 A CN109136860 A CN 109136860A CN 201811089356 A CN201811089356 A CN 201811089356A CN 109136860 A CN109136860 A CN 109136860A
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- silver
- oxide
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- enhanced raman
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- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 103
- 229910052709 silver Inorganic materials 0.000 claims abstract description 102
- 239000004332 silver Substances 0.000 claims abstract description 102
- 239000002073 nanorod Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 239000002131 composite material Substances 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 230000035945 sensitivity Effects 0.000 claims abstract description 14
- 238000010276 construction Methods 0.000 claims abstract description 5
- 235000013339 cereals Nutrition 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 31
- 230000008021 deposition Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 12
- 230000003068 static effect Effects 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 239000010946 fine silver Substances 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 9
- 239000002086 nanomaterial Substances 0.000 claims description 5
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 230000002708 enhancing effect Effects 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 21
- 101000674278 Homo sapiens Serine-tRNA ligase, cytoplasmic Proteins 0.000 description 20
- 101000674040 Homo sapiens Serine-tRNA ligase, mitochondrial Proteins 0.000 description 20
- 102100040516 Serine-tRNA ligase, cytoplasmic Human genes 0.000 description 20
- 239000004411 aluminium Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 8
- 229960000907 methylthioninium chloride Drugs 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000000479 surface-enhanced Raman spectrum Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 206010020751 Hypersensitivity Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- UENWRTRMUIOCKN-UHFFFAOYSA-N benzyl thiol Chemical compound SCC1=CC=CC=C1 UENWRTRMUIOCKN-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Inorganic Chemistry (AREA)
- Toxicology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811089356.1A CN109136860B (zh) | 2018-09-18 | 2018-09-18 | 一种表面增强拉曼基底及其制备方法 |
Applications Claiming Priority (1)
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CN201811089356.1A CN109136860B (zh) | 2018-09-18 | 2018-09-18 | 一种表面增强拉曼基底及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN109136860A true CN109136860A (zh) | 2019-01-04 |
CN109136860B CN109136860B (zh) | 2020-07-31 |
Family
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Family Applications (1)
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CN201811089356.1A Active CN109136860B (zh) | 2018-09-18 | 2018-09-18 | 一种表面增强拉曼基底及其制备方法 |
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CN (1) | CN109136860B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110468376A (zh) * | 2019-08-27 | 2019-11-19 | 吉林大学 | 一种碳包覆的银纳米棒阵列及其制备方法和应用 |
CN111122546A (zh) * | 2020-01-02 | 2020-05-08 | 北京科技大学 | 一种缓蚀剂分子的定性、半定量检测方法 |
CN111398245A (zh) * | 2020-04-13 | 2020-07-10 | 清华大学 | 一种周期性排列的“扶手型”表面增强拉曼基片及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104789939A (zh) * | 2015-03-17 | 2015-07-22 | 清华大学 | 一种表面增强拉曼散射基底及其制备方法 |
CN105403551A (zh) * | 2015-10-30 | 2016-03-16 | 上海纳米技术及应用国家工程研究中心有限公司 | 一种具有拉曼增强性能薄膜的制备方法 |
US20160077010A1 (en) * | 2013-05-01 | 2016-03-17 | Indian Institute Of Technology Madras | Coated mesoflowers for molecular detection and smart barcode materials |
CN106018379A (zh) * | 2016-05-16 | 2016-10-12 | 华南师范大学 | 一种大面积表面增强拉曼散射基底及其制备方法 |
CN106353296A (zh) * | 2016-08-11 | 2017-01-25 | 华南师范大学 | 一种制备高均匀性表面增强拉曼活性基底的方法 |
CN107761053A (zh) * | 2017-10-26 | 2018-03-06 | 上海纳米技术及应用国家工程研究中心有限公司 | 大面积拉曼增强基底的制备方法及其产品和应用 |
-
2018
- 2018-09-18 CN CN201811089356.1A patent/CN109136860B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160077010A1 (en) * | 2013-05-01 | 2016-03-17 | Indian Institute Of Technology Madras | Coated mesoflowers for molecular detection and smart barcode materials |
CN104789939A (zh) * | 2015-03-17 | 2015-07-22 | 清华大学 | 一种表面增强拉曼散射基底及其制备方法 |
CN105403551A (zh) * | 2015-10-30 | 2016-03-16 | 上海纳米技术及应用国家工程研究中心有限公司 | 一种具有拉曼增强性能薄膜的制备方法 |
CN106018379A (zh) * | 2016-05-16 | 2016-10-12 | 华南师范大学 | 一种大面积表面增强拉曼散射基底及其制备方法 |
CN106353296A (zh) * | 2016-08-11 | 2017-01-25 | 华南师范大学 | 一种制备高均匀性表面增强拉曼活性基底的方法 |
CN107761053A (zh) * | 2017-10-26 | 2018-03-06 | 上海纳米技术及应用国家工程研究中心有限公司 | 大面积拉曼增强基底的制备方法及其产品和应用 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110468376A (zh) * | 2019-08-27 | 2019-11-19 | 吉林大学 | 一种碳包覆的银纳米棒阵列及其制备方法和应用 |
CN111122546A (zh) * | 2020-01-02 | 2020-05-08 | 北京科技大学 | 一种缓蚀剂分子的定性、半定量检测方法 |
CN111398245A (zh) * | 2020-04-13 | 2020-07-10 | 清华大学 | 一种周期性排列的“扶手型”表面增强拉曼基片及其制备方法 |
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CN109136860B (zh) | 2020-07-31 |
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Inventor after: Zhang Zhengjun Inventor after: Ma Lingwei Inventor before: Ma Lingwei Inventor before: Zhang Zhengjun |
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Effective date of registration: 20240115 Address after: No. 30 Shuangqing Road, Haidian District, Beijing 100084 Patentee after: TSINGHUA University Patentee after: University OF SCIENCE AND TECHNOLOGY BEIJING Address before: 100083 No. 30, Haidian District, Beijing, Xueyuan Road Patentee before: University OF SCIENCE AND TECHNOLOGY BEIJING |