CN109133935A - It is a kind of to prepare silicon carbide closed pore ceramics and preparation method thereof using industrial silicon substrate waste residue - Google Patents

It is a kind of to prepare silicon carbide closed pore ceramics and preparation method thereof using industrial silicon substrate waste residue Download PDF

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Publication number
CN109133935A
CN109133935A CN201811099175.7A CN201811099175A CN109133935A CN 109133935 A CN109133935 A CN 109133935A CN 201811099175 A CN201811099175 A CN 201811099175A CN 109133935 A CN109133935 A CN 109133935A
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silicon substrate
waste residue
silicon carbide
closed pore
substrate waste
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马北越
张亚然
高陟
苏畅
任鑫明
于敬雨
吴桦
于景坤
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Northeastern University China
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Northeastern University China
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Priority to CN201811099175.7A priority Critical patent/CN109133935A/en
Publication of CN109133935A publication Critical patent/CN109133935A/en
Priority to PCT/CN2019/080544 priority patent/WO2020057094A1/en
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Abstract

The industrial silicon substrate waste residue of a kind of utilization of the invention prepares silicon carbide closed pore ceramics and preparation method thereof, the component and quality proportioning that silicon carbide closed pore ceramics include are industrial silicon substrate waste residue: reducing agent: binder: sintering aid: pore creating material=100: (30~60): (3~5): (5~60): (5~60).Preparation step are as follows: (1) according to the ratio, industrial silicon substrate waste residue: reducing agent: binder: sintering aid: pore creating material=100: (30~60): (3~5) (5~60) (5~60), material is uniformly mixed, ball milling must mix material；(2) it is dry-pressing formed that material will be mixed, and dry；(3) material after drying is placed in high temperature furnace, sintering and held for some time under reducing atmosphere, it is made and prepares silicon carbide closed pore ceramics using industrial silicon substrate waste residue, its apparent porosity is 30~55%, closed porosity is 12~20%, room temperature compression strength is 106~140MPa, and thermal shock resistance is 103~111 times, and thermal conductivity is 0.40~0.69w/ (mK).

Description

It is a kind of to prepare silicon carbide closed pore ceramics and preparation method thereof using industrial silicon substrate waste residue
Technical field:
The invention belongs to industrial solid castoff resource utilization and porous ceramic film material preparation technical fields, and in particular to It is a kind of to prepare silicon carbide closed pore ceramics and preparation method thereof using industrial silicon substrate waste residue.
Background technique:
With the development that society is with rapid changepl. never-ending changes and improvements, the phenomenon that resource exhaustion, is generally existing in countries in the world, wherein industrial residue Because of its bulk deposition, serious environmental problem and economic problems are had resulted in.Therefore, rationally recycle industrial residue, change give up into Treasured is particularly important.
Closed pore ceramics because its with thermal conductivity and density the excellent characteristics such as low, impermeability, can be used as heat-barrier material application In the fields such as metallurgy, building, the energy.Therefore, high temperature resistant is prepared, closed pore ceramics of the safety without hidden danger are that the important of porous material is ground Study carefully one of direction.
SiC material has the performances such as intensity is high, density is low, specific gravity is small, thermal shock resistance and excellent in oxidation resistance, in high temperature work It is widely applied in industry.Therefore, silicon carbide closed pore ceramics are prepared by raw material of industrial silicon substrate waste residue, can have both prepared high temperature resistant peace Completely without the thermal insulation material of hidden danger, and recycling and reusing can be carried out to industrial residue.
Summary of the invention:
The purpose of the present invention is overcoming above-mentioned the shortcomings of the prior art, a kind of industrial silicon substrate waste residue preparation of utilization is provided Silicon carbide closed pore ceramics and preparation method thereof, the master operation of this method is as follows: firstly, industrial silicon substrate waste residue is located in advance Reason, removes certain impurity, secondly, mixing suitable reducing agent according to the component of silicon substrate waste residue；Then, with pretreated silicon Base waste residue is raw material, and binder and pore creating material is added, mixture is mixed；Finally, through dry-pressing formed, the high temperature under reducing condition It is sintered and silicon carbide closed pore ceramics is made.
To achieve the above object, the invention adopts the following technical scheme:
It is a kind of to prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, including component and quality proportioning are as follows: industrial silicon Base waste residue: reducing agent: binder: sintering aid: pore creating material=100: (30~60): (3~5): (5~60): (5~60).
The industrial silicon substrate waste residue is one of gangue, iron ore tailings, polycrystalline silicon cut waste or rice hull ash Or several, main component SiO2。
The reducing agent is one of carbon black, fat coal or active carbon or a variety of.
The reducing agent dosage should be higher than that silicon substrate solid waste SiO2, Si, metallic iron the impurity such as oxide with also The consumption of former agent reaction.
The binder is one of phenolic resin, waterglass, aluminium dihydrogen phosphate or polyvinyl alcohol or a variety of.
The sintering aid is one of potassium feldspar, albite or anorthite or a variety of.
The pore creating material is one of starch, graphite, ammonium hydrogen carbonate or ammonium chloride or a variety of.
The silicon carbide closed pore ceramics apparent porosity obtained is 30~55%, and closed porosity is 12~20%, often Warm compression strength is 106~140MPa, and thermal shock resistance is 103~111 times, and thermal conductivity is 0.40~0.69w/ (mK).
The thermal shock resistances of the silicon carbide closed pore ceramics is characterized with air-cooled cycle-index, concrete operations: After 1000 DEG C of high temperature stove heating 15min, air-cooled 10min is 1 time；Then it puts back to again empty after 1000 DEG C of heat preservation 15min in furnace Cold 10min, such circulate operation is until sample fragmentation.
It is a kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, comprising the following steps:
Step 1, raw material mixes:
According to the ratio, industrial silicon substrate waste residue: reducing agent: binder: sintering aid: pore creating material=100: (30~60): (3~ 5) (5~60) (5~60), material is uniformly mixed, and ball milling must mix material；
Step 2, dry-pressing formed:
It is dry-pressing formed that material will be mixed, and dry；
Step 3, high temperature sintering:
Material after drying is placed in high temperature furnace, sintering and held for some time under reducing atmosphere are made and utilize industry Silicon substrate waste residue prepares silicon carbide closed pore ceramics.
In the step 1, industrial silicon substrate waste residue is before mixing through high-temperature calcination and the processing that pulverizes and sieves, for removing work Impurity in industry silicon substrate waste residue mixes according to the ratio after silicon substrate clinker is made.
In the step 1, the calcination operation carries out in calcining furnace, and calcination temperature is 900 DEG C, and calcination time is 5h, the calcining furnace are in box resistance wire furnace, silicon carbide rod furnace, Si-Mo rod furnace and the tunnel oven used under unprotect atmosphere One kind.
In the step 1, the described treatment process that pulverizes and sieves are as follows: use jaw crusher pulverization process, powder warp After 200 meshes, silicon substrate clinker is made.
In the step 1, the silicon substrate clinker and reducing agent are before material mixing, by ball-milling treatment, silicon substrate The equipment that clinker and reducing agent ball milling use is planetary ball mill, with 200~600rmin-15~10h of revolving speed unidirectional operation.
In the step 1, the equipment that the mixed ball milling of all materials uses is planetary ball mill, with 300r min-1Revolving speed unidirectional operation 5h.
In the step 2, the briquetting pressure is 50~300MPa, and the dwell time is 3~5min.
In the step 2, the drying temperature of the drying process is 120 DEG C, drying time is 12~for 24 hours, it is dry Equipment is drying box or tunnel drying kiln.
In the step 3, the high temperature furnace is in the chamber type electric resistance furnace, tube type resistance furnace or tunnel oven of ventable atmosphere It is a kind of.
In the step 3, the sintering temperature is 1400~1600 DEG C, and the sintered heat insulating time is 2~10h.
In the step 3, the reducing atmosphere is to bury carbon or be passed through under CO atmosphere, in which: buries carbon condition are as follows: dry-pressing Molding material is placed in graphite crucible, and graphite crucible is placed in large scale corundum crucible, and abundance is put into corundum crucible Graphite powder, one block of corundum plate of corundum crucible upper end cover completely cut off contact of the graphite crucible with outside air；It is passed through CO condition are as follows: by High temperature furnace bottom or the side of kiln are passed through CO gas, and gas flow is 1~100L/min.
Beneficial effects of the present invention:
1. the industrial silicon substrate waste residue of a kind of utilization of the invention, which prepares silicon carbide closed pore ceramics and preparation method thereof, realizes work The high efficiente callback of industry silicon substrate waste residue recycles, and improves its utilization rate and added value, and greatly reduces its dirt generated to environment Dye has good environmental benefit.
2. the industrial silicon substrate waste residue of a kind of utilization of the invention prepares silicon carbide closed pore ceramics and preparation method thereof, prepare High-performance silicon carbide closed pore ceramics, heat insulation effect is good, and raw material sources are extensive, cheap, has certain economic benefit.
3. it is easy to operate that the industrial silicon substrate waste residue of a kind of utilization of the invention prepares silicon carbide closed pore ceramics and preparation method thereof It is easy, it is convenient for industrialized production.
Detailed description of the invention:
Fig. 1 is the process flow chart of the embodiment of the present invention 1~6；
Fig. 2 is the XRD diagram that silicon carbide closed pore ceramics are prepared using industrial silicon substrate waste residue prepared by the embodiment of the present invention 2.
Specific embodiment:
Below with reference to embodiment, the present invention is described in further detail.
In following example 1~6, the thermal shock resistance of silicon carbide closed pore ceramics obtained carrys out table with air-cooled cycle-index Sign, concrete operations are as follows: after 1000 DEG C of high temperature stove heating 15min, air-cooled 10min is 1 time；Then it is put back in furnace again in 1000 Air-cooled 10min after DEG C heat preservation 15min, such circulate operation is until sample fragmentation.
Embodiment 1
It is a kind of to prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, including component and quality proportioning are as follows: polysilicon Clinker: carbon black: phenolic resin: potassium feldspar: ammonium hydrogen carbonate=100: 30: 5: 5: 10.
A kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, process flow chart is as shown in Figure 1, press Following steps carry out:
Step 1: feedstock processing and weighing
(1) it by polycrystalline silicon cut waste in box resistance wire furnace, after calcining 5h at 900 DEG C, is crushed through jaw crusher, 200 mesh sievings processing, obtains the polysilicon clinker of removal polyethylene glycol and water；
(2) according to the ratio, by polysilicon clinker and carbon black through planetary ball mill, with 200~600rmin-1Revolving speed is unidirectional After running 5~10h progress ball milling, mixed with phenolic resin, potassium feldspar and ammonium hydrogen carbonate, and with 300rmin-1Rate ball milling 3h obtains mixing material；
Step 2: dry-pressing formed
Material will be mixed and be placed in dry-pressing formed in press machine, pressure maintaining 5min under 200MPa, be placed in drying box at 120 DEG C Heat preservation is for 24 hours.
Step 3: high temperature sintering
By material after drying in 1500 DEG C of chamber type electric resistance furnace, buries and be sufficiently sintered 2h under the conditions of carbon, it is cooling to high temperature furnace To room temperature, it is made and prepares silicon carbide closed pore ceramics using industrial silicon substrate waste residue.
Through detecting, the main object of gained silicon carbide closed pore ceramics is mutually 6H-SiC, apparent porosity 30%, closed porosity It is 12%, room temperature compression strength is 140MPa, and thermal shock resistance is 106 times, and thermal conductivity is 0.69w/ (mK).
Embodiment 2
It is a kind of to prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, including component and quality proportioning are as follows: polysilicon Clinker: active carbon: waterglass: potassium feldspar: ammonium chloride=100: 30: 5: 5: 20.
A kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, process flow chart is as shown in Figure 1, press Following steps carry out:
Step 1: feedstock processing and weighing
(1) it by polycrystalline silicon cut waste in box resistance wire furnace, after calcining 5h at 900 DEG C, is crushed through jaw crusher, 200 mesh sievings processing, obtains the polysilicon clinker of removal polyethylene glycol and water；
(2) according to the ratio, by polysilicon clinker and active carbon through planetary ball mill, with 200~600rmin-1Revolving speed list After carrying out ball milling to 5~10h of operation, mixed with waterglass, potassium feldspar and ammonium chloride, and with 300rmin-1Rate ball milling 3h obtains mixing material；
Step 2: dry-pressing formed
Material will be mixed and be placed in dry-pressing formed in press machine, pressure maintaining 5min under 200MPa, be placed in drying box at 120 DEG C Heat preservation is for 24 hours.
Step 3: high temperature sintering
By material after drying in 1500 DEG C of chamber type electric resistance furnace, buries and be sufficiently sintered 2h under the conditions of carbon, it is cooling to high temperature furnace It to room temperature, is made and prepares silicon carbide closed pore ceramics using industrial silicon substrate waste residue, XRD diagram is as shown in Figure 2.
Through detecting, the main object of gained silicon carbide closed pore ceramics is mutually 6H-SiC, apparent porosity 40%, closed porosity It is 14%, room temperature compression strength is 120MPa, and thermal shock resistance is 108 times, and thermal conductivity is 0.67w/ (mK).
Embodiment 3
It is a kind of to prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, including component and quality proportioning are as follows: rice hull ash Clinker: carbon black: phenolic resin: albite: starch=100: 60: 5: 5: 30.
A kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, process flow chart is as shown in Figure 1, press Following steps carry out:
Step 1: feedstock processing and weighing
(1) it by rice hull ash in box resistance wire furnace, after calcining 5h at 900 DEG C, is crushed through jaw crusher, 200 mesh mistakes Sieve processing, obtains the rice hull ash clinker of removal polyethylene glycol and water；
(2) according to the ratio, unidirectional with 200~600rmin-1 revolving speed by rice hull ash clinker and carbon black through planetary ball mill After running 5~10h progress ball milling, mixed with phenolic resin, albite and starch, and with 300rmin-1Rate ball milling 3h, Material must be mixed；
Step 2: dry-pressing formed
Material will be mixed and be placed in dry-pressing formed in press machine, pressure maintaining 5min under 200MPa, be placed in drying box at 120 DEG C Heat preservation is for 24 hours.
Step 3: high temperature sintering
By material after drying in 1600 DEG C of chamber type electric resistance furnace, buries and be sufficiently sintered 2h under the conditions of carbon, it is cooling to high temperature furnace To room temperature, it is made and prepares silicon carbide closed pore ceramics using industrial silicon substrate waste residue.
Through detecting, the main object of gained silicon carbide closed pore ceramics is mutually 6H-SiC, apparent porosity 46%, closed porosity It is 20%, room temperature compression strength is 106MPa, and thermal shock resistance is 111 times, and thermal conductivity is 0.46w/ (mK).
Embodiment 4
It is a kind of to prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, including component and quality proportioning are as follows: gangue Clinker: carbon black: aluminium dihydrogen phosphate: anorthite: graphite powder=100: 40: 5: 10: 30.
A kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, process flow chart is as shown in Figure 1, press Following steps carry out:
Step 1: feedstock processing and weighing
(1) it by gangue in box resistance wire furnace, after calcining 5h at 900 DEG C, is crushed through jaw crusher, 200 mesh mistakes Sieve processing, obtains the gangue clinker of removal polyethylene glycol and water；
(2) according to the ratio, by gangue clinker and carbon black through planetary ball mill, with 200~600rmin-1Revolving speed is unidirectional After running 5~10h progress ball milling, with aluminium dihydrogen phosphate: anorthite and graphite powder are mixed, and with 300rmin-1Rate ball milling 3h obtains mixing material；
Step 2: dry-pressing formed
Material will be mixed and be placed in dry-pressing formed in press machine, pressure maintaining 5min under 200MPa, be placed in drying box at 120 DEG C Heat preservation is for 24 hours.
Step 3: high temperature sintering
By material after drying in 1500 DEG C of chamber type electric resistance furnace, buries and be sufficiently sintered 2h under the conditions of carbon, it is cooling to high temperature furnace To room temperature, it is made and prepares silicon carbide closed pore ceramics using industrial silicon substrate waste residue.
Through detecting, the main object of gained silicon carbide closed pore ceramics is mutually 6H-SiC, apparent porosity 45%, closed porosity It is 18%, room temperature compression strength is 109MPa, and thermal shock resistance is 110 times, and thermal conductivity is 0.44w/ (mK).
Embodiment 5
A kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, process flow chart is as shown in Figure 1, press Following steps carry out:
It is a kind of to prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, including component and quality proportioning are as follows: gangue Clinker: carbon black: aluminium dihydrogen phosphate: potassium feldspar: graphite powder=100: 30: 3: 5: 60.
A kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, process flow chart is as shown in Figure 1, press Following steps carry out:
Step 1: feedstock processing and weighing
(1) it by gangue in box resistance wire furnace, after calcining 5h at 900 DEG C, is crushed through jaw crusher, 200 mesh mistakes Sieve processing, obtains the gangue clinker of removal polyethylene glycol and water；
(2) according to the ratio, by gangue clinker and carbon black through planetary ball mill, with 200~600rmin-1Revolving speed is unidirectional After running 5~10h progress ball milling, mixed with aluminium dihydrogen phosphate, potassium feldspar and graphite powder, and with 300rmin-1Rate ball milling 3h obtains mixing material；
Step 2: dry-pressing formed
Material will be mixed and be placed in dry-pressing formed in press machine, pressure maintaining 5min under 200MPa, be placed in drying box at 120 DEG C Heat preservation is for 24 hours.
Step 3: high temperature sintering
By material after drying in 1500 DEG C of chamber type electric resistance furnace, buries and be sufficiently sintered 2h under the conditions of carbon, it is cooling to high temperature furnace To room temperature, it is made and prepares silicon carbide closed pore ceramics using industrial silicon substrate waste residue.
Through detecting, the main object of gained silicon carbide closed pore ceramics is mutually 6H-SiC, apparent porosity 55%, closed porosity It is 10%, room temperature compression strength is 101MPa, and thermal shock resistance is 103 times, and thermal conductivity is 0.40w/ (mK).
Embodiment 6
A kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, process flow chart is as shown in Figure 1, press Following steps carry out:
It is a kind of to prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, including component and quality proportioning are as follows: rice hull ash Clinker: carbon black: phenolic resin: albite: starch=100: 60: 5: 60: 30.
A kind of to prepare silicon carbide closed pore ceramic preparation using industrial silicon substrate waste residue, process flow chart is as shown in Figure 1, press Following steps carry out:
Step 1: feedstock processing and weighing
(1) it by rice hull ash in box resistance wire furnace, after calcining 5h at 900 DEG C, is crushed through jaw crusher, 200 mesh mistakes Sieve processing, obtains the rice hull ash clinker of removal polyethylene glycol and water；
(2) according to the ratio, by rice hull ash clinker and carbon black through planetary ball mill, with 200~600rmin-1Revolving speed is unidirectional After running 5~10h progress ball milling, mixed with phenolic resin, albite and starch, and with 300rmin-1Rate ball milling 3h, Material must be mixed；
Step 2: dry-pressing formed
Material will be mixed and be placed in dry-pressing formed in press machine, pressure maintaining 5min under 200MPa, be placed in drying box at 120 DEG C Heat preservation is for 24 hours.
Step 3: high temperature sintering
By material after drying in 1600 DEG C of chamber type electric resistance furnace, buries and be sufficiently sintered 2h under the conditions of carbon, it is cooling to high temperature furnace To room temperature, it is made and prepares silicon carbide closed pore ceramics using industrial silicon substrate waste residue.
Through detecting, the main object of gained silicon carbide closed pore ceramics is mutually 6H-SiC, apparent porosity 40%, closed porosity It is 16%, room temperature compression strength is 119MPa, and thermal shock resistance is 109 times, and thermal conductivity is 0.58w/ (mK).

Claims (10)

1. a kind of prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, which is characterized in that including component and quality proportioning Are as follows: industrial silicon substrate waste residue: reducing agent: binder: sintering aid: pore creating material=100: (30~60): (3~5): (5~60): (5 ~60).
2. according to claim 1 prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, which is characterized in that described Industrial silicon substrate waste residue is one or more of gangue, iron ore tailings, polycrystalline silicon cut waste or rice hull ash；Described goes back Former agent is one of carbon black, fat coal or active carbon or a variety of；The binder is phenolic resin, waterglass, di(2-ethylhexyl)phosphate One of hydrogen aluminium or polyvinyl alcohol are a variety of；The sintering aid be one of potassium feldspar, albite or anorthite or It is a variety of；The pore creating material is one of starch, graphite, ammonium hydrogen carbonate or ammonium chloride or a variety of.
3. according to claim 1 prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, which is characterized in that described Silicon carbide closed pore ceramics apparent porosity be 30~55%, closed porosity be 12~20%, room temperature compression strength be 106~ 140MPa, thermal shock resistance are 103~111 times, and thermal conductivity is 0.40~0.69w/ (mK).
4. according to claim 3 prepare silicon carbide closed pore ceramics using industrial silicon substrate waste residue, which is characterized in that described The thermal shock resistance of silicon carbide closed pore ceramics is characterized with air-cooled cycle-index, concrete operations: is added in 1000 DEG C of high temperature furnaces After hot 15min, air-cooled 10min is 1 time；Then the air-cooled 10min after 1000 DEG C of heat preservation 15min is put back in furnace again, is so recycled Operation is until sample fragmentation.
5. a kind of preparation method for preparing silicon carbide closed pore ceramics using industrial silicon substrate waste residue described in claim 1, feature It is, comprising the following steps:
Step 1, raw material mixes:
According to the ratio, industrial silicon substrate waste residue: reducing agent: binder: sintering aid: pore creating material=100: (30~60): (3~5) (5 ~60) (5~60), material is uniformly mixed, and ball milling must mix material；
Step 2, dry-pressing formed:
It is dry-pressing formed that material will be mixed, and dry；
Step 3, high temperature sintering:
Material after drying is placed in high temperature furnace, sintering and held for some time under reducing atmosphere, is made and utilizes industrial silicon substrate Waste residue prepares silicon carbide closed pore ceramics.
6. the preparation method according to claim 5 for preparing silicon carbide closed pore ceramics using industrial silicon substrate waste residue, feature It is, in the step 1, industrial silicon substrate waste residue is before mixing through high-temperature calcination and the processing that pulverizes and sieves, for removing industry Impurity in silicon substrate waste residue mixes according to the ratio after silicon substrate clinker is made.
7. the preparation method according to claim 5 for preparing silicon carbide closed pore ceramics using industrial silicon substrate waste residue, feature It is, in the step 1, the calcination operation carries out in calcining furnace, and calcination temperature is 900 DEG C, calcination time 5h, The calcining furnace is in box resistance wire furnace, silicon carbide rod furnace, Si-Mo rod furnace and the tunnel oven used under unprotect atmosphere It is a kind of；The described treatment process that pulverizes and sieves are as follows: use jaw crusher pulverization process, silicon substrate is made after 200 meshes in powder Clinker.
8. the preparation method according to claim 5 for preparing silicon carbide closed pore ceramics using industrial silicon substrate waste residue, feature It is, in the step 1, the silicon substrate clinker and reducing agent are before material mixing, by ball-milling treatment, silicon substrate clinker The equipment used with reducing agent ball milling is planetary ball mill, with 200~600rmin-15~10h of revolving speed unidirectional operation；It is all The equipment that the mixed ball milling of material uses is planetary ball mill, with 300rmin-1Revolving speed unidirectional operation 5h.
9. the preparation method according to claim 5 for preparing silicon carbide closed pore ceramics using industrial silicon substrate waste residue, feature It is, in the step 2, briquetting pressure used is 50~300MPa, and the dwell time is 3~5min；The dry behaviour The drying temperature of work be 120 DEG C, drying time be 12~for 24 hours, drying equipment be drying box or tunnel drying kiln.
10. the preparation method according to claim 5 for preparing silicon carbide closed pore ceramics using industrial silicon substrate waste residue, feature It is, in the step 3, the sintering temperature is 1400~1600 DEG C, and the sintered heat insulating time is 2~10h；Described goes back Primordial Qi atmosphere is to bury carbon or be passed through under CO atmosphere, in which: buries carbon condition are as follows: dry-pressing formed material is placed in graphite crucible, graphite Crucible is placed in large scale corundum crucible, and sufficient graphite powder, one block of corundum of corundum crucible upper end cover are put into corundum crucible Plate completely cuts off contact of the graphite crucible with outside air；It is passed through CO condition are as follows: CO gas is passed through by the side at high temperature furnace bottom or kiln, Gas flow is 1~100L/min.
CN201811099175.7A 2018-09-20 2018-09-20 It is a kind of to prepare silicon carbide closed pore ceramics and preparation method thereof using industrial silicon substrate waste residue Pending CN109133935A (en)

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CN110526584A (en) * 2019-10-09 2019-12-03 中国科学院过程工程研究所 A kind of crystal silicon cutting waste material collaboration gangue prepares the method and purposes of porous micro crystal material
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CN114516751A (en) * 2022-02-28 2022-05-20 肇庆学院 Method for preparing reticular porous ceramic material by utilizing solid waste
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CN107892576A (en) * 2017-10-25 2018-04-10 深圳市商德先进陶瓷股份有限公司 Silicon carbide ceramics and preparation method thereof and fin and its application

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WO2020057094A1 (en) * 2018-09-20 2020-03-26 东北大学 Silicon carbide closed-cell ceramic prepared by using industrial silicon-based waste residue and preparation method therefor
CN109929560A (en) * 2019-04-26 2019-06-25 珠海三豫环保新材料科技有限公司 A method of magnetic bio-carrier is prepared using gangue
CN110526584A (en) * 2019-10-09 2019-12-03 中国科学院过程工程研究所 A kind of crystal silicon cutting waste material collaboration gangue prepares the method and purposes of porous micro crystal material
CN110526584B (en) * 2019-10-09 2020-11-10 中国科学院过程工程研究所 Method for preparing porous microcrystalline material by using crystalline silicon cutting waste and coal gangue and application
CN114516751A (en) * 2022-02-28 2022-05-20 肇庆学院 Method for preparing reticular porous ceramic material by utilizing solid waste
CN114516751B (en) * 2022-02-28 2022-12-09 肇庆学院 Method for preparing reticular porous ceramic material by utilizing solid waste
CN115974522A (en) * 2022-12-02 2023-04-18 武汉科技大学 Light-weight high-temperature infrared radiation element and preparation method thereof
CN115974522B (en) * 2022-12-02 2023-11-17 武汉科技大学 Light-weight high-temperature infrared radiation element and preparation method thereof

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