CN109133159B - Indium-doped Zn2SnO4Method for preparing nano-wire - Google Patents
Indium-doped Zn2SnO4Method for preparing nano-wire Download PDFInfo
- Publication number
- CN109133159B CN109133159B CN201811008587.5A CN201811008587A CN109133159B CN 109133159 B CN109133159 B CN 109133159B CN 201811008587 A CN201811008587 A CN 201811008587A CN 109133159 B CN109133159 B CN 109133159B
- Authority
- CN
- China
- Prior art keywords
- indium
- solution
- nanowire
- doped
- sno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0021—Matrix based on noble metals, Cu or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
Abstract
The invention relates to the field of nano material preparation, and aims to provide indium-doped Zn2SnO4A method for preparing nanowires. The method comprises the following steps: adding organic zinc salt into an ammonium oxalate aqueous solution, and then adding indium salt; stirring under the condition of water bath to form a uniform solution; transferring the mixture into a reaction kettle for constant-temperature hydrothermal reaction, and naturally cooling the mixture to room temperature; adding tin salt, and adjusting the pH value with ammonia water; placing the reaction kettle in a water bath, stirring and reacting to obtain a solution, centrifuging, and cleaning with hypochlorous acid; drying the solid product to obtain the Zn doped with indium2SnO4A nanowire. In the invention, the doping of the indium element can improve the crystal structure of zinc stannate, improve the conductivity and improve the bonding property of the zinc stannate and the metallic silver, thereby improving the electrical and mechanical properties of the silver-based conductive alloy material. The indium-doped nanowire prepared by a one-step hydrothermal method has the characteristics of high purity, uniform size and good dispersibility. The process is simple, and the reaction conditions are easy to control; low cost and suitability for large-scale industrial production.
Description
Technical Field
The invention belongs to the field of nano material preparation, and particularly relates to indium-doped Zn applied to the field of silver-based conductive alloy materials2SnO4A method for preparing nanowires.
Background
In the silver-based conductive alloy material, the advantages and disadvantages of the enhanced phase structure and the performance directly influence the mechanical and electrical properties of the silver-based conductive alloy. Silver-based conductive alloys need to possess good electrical conductivity, thermal conductivity, processability, and erosion and fusion welding resistance. The inorganic metal oxide is used as the reinforcing phase of the silver-based conductive alloy material, so that the hardness, the fusion welding resistance and the arc erosion resistance of the material can be obviously improved, and the electric conduction and heat conduction performance of the silver matrix can be reduced. For example, the currently commonly used reinforcing phase contains cadmium oxide, tin oxide and other oxides, the cadmium oxide has excellent comprehensive mechanical and electrical properties after reinforcing the silver-based conductive alloy, but the cadmium is toxic and is forbidden to be used for 15 years by the European Union; the tin oxide reinforced silver-based conductive alloy has excellent mechanical properties, but has the problems of large contact resistance, high temperature rise and the like in the service process, so that the electric service life is short, the processability is poor, the manufacturing cost is high, and the application of the silver-based conductive alloy is greatly limited. Therefore, it is necessary to select a reinforcing phase material with excellent electrical and thermal conductivity to reinforce the silver-based conductive alloy, and further improve the performance of the silver-based conductive alloy by regulating and controlling the microstructure of the material.
Zinc stannate (Zn)2SnO4) The wide-band-gap n-type semiconductor material has a crystal structure matched with metallic silver, and is applied to various fields of lithium battery cathode materials, photocatalysis, gas sensitive materials, flame retardants and the like. Compared with binary oxide, zinc stannate has higher stability and electron mobility. In addition, the zinc stannate has high melting point and hardness, the material system is environment-friendly and nontoxic, the cost is low, and the silver-based conductive alloy material has a good application prospect in the field of silver-based conductive alloy materials. Meanwhile, from the perspective of microstructure and performance, compared with the existing zinc stannate powder particles, the zinc stannate nanowires can better improve the interface bonding strength of the silver-based conductive alloy, improve the fracture toughness and the elongation percentage after fracture of the material, and improve the mechanical property and the electrical property of the silver-based conductive alloy. However, the common zinc stannate nanowires can not meet the application performance requirements of the conductive alloy in terms of electrical properties and surface characteristics.
Disclosure of Invention
In order to overcome the technical defects of the prior reinforcing phase field of silver-based conductive alloy, the invention provides indium-doped Zn2SnO4A method for preparing nanowires. The method has simple preparation process, easily controlled reaction conditions, and can stably synthesize the indium-doped Zn with excellent dispersibility2SnO4The nano-wire has excellent mechanical and electrical properties, and can be applied to the fields of conductive alloy reinforcement, composite material performance improvement and the like.
In order to solve the technical problem, the solution of the invention is as follows:
providing an indium-doped Zn2SnO4A method of preparing nanowires comprising the steps of:
(1) adding 0.1mol of organic zinc salt into 50mL of ammonium oxalate aqueous solution, and then adding indium salt; stirring for 25min under the condition of water bath at the temperature of 40-60 ℃ to form uniform solution A; wherein the mass percentage concentration of the ammonium oxalate aqueous solution is 5-10 wt%, and the mol percentage of the indium salt and the organic zinc salt is 10-15 mol%;
(2) transferring the solution A into a reaction kettle, and placing the reaction kettle in an electric oven with the constant temperature of 150 ℃; carrying out hydrothermal reaction for 36h, and naturally cooling to room temperature to obtain a solution B;
(3) adding 0.05mol of tin salt into the solution B, and adjusting the pH value to 8-9 by ammonia water; placing the reaction kettle in a water bath at 95 ℃, and stirring for reaction for 2-4 hours to obtain a solution C;
(4) taking out the solution C, centrifuging, and cleaning with hypochlorous acid; drying the solid product in a 70 ℃ oven to obtain the Zn doped with indium2SnO4A nanowire.
In the present invention, the organic zinc salt is dimethyl zinc or diethyl zinc.
In the present invention, the indium salt is indium nitrate or indium chloride.
In the present invention, the tin source is tin chloride or sodium stannate.
In the present invention, the finally obtained indium-doped Zn2SnO4The length-diameter ratio of the nanowire is 50-100: 1, the diameter of the nanowire is 20-50 nm, and the indium content of the nanowire is 5-10 wt%.
Compared with the prior art, the invention has the beneficial effects that:
1. the doping of the indium element can improve the crystal structure of zinc stannate, improve the conductivity and improve the bonding property of the zinc stannate and the metal silver, thereby improving the electrical and mechanical properties of the silver-based conductive alloy material.
2. The indium-doped nanowire prepared by the one-step hydrothermal method has the characteristics of high purity, uniform size and good dispersibility.
3. The method has simple process and easily controlled reaction conditions; low cost and suitability for large-scale industrial production.
4. The powder obtained by the invention has good bonding performance with metallic silver, and can keep lower resistivity while improving the mechanical property of the silver.
The silver-based conductive alloy prepared by using the zinc stannate powder as the reinforcing phase has the resistivity of more than 2.40 mu omega cm. Under the same preparation conditions, when the indium-doped zinc stannate nanowire is used as a reinforcing phase, the resistivity of the conductive alloy is reduced to be less than 2.18 mu omega cm, and the tensile strength is improved from about 230MPa reinforced by zinc stannate powder to more than 280MPa reinforced by the indium-doped zinc stannate nanowire.
Detailed Description
Example 1
(1) 0.1mol of dimethyl zinc is added into 50mL of 5 wt% ammonium oxalate aqueous solution, indium nitrate is added into the dimethyl zinc solution according to the proportion of 10 mol% of the dimethyl zinc, and the mixture is heated and stirred at 40 ℃ for 25min to form uniform solution A.
(2) Then, the solution A is transferred into a high-pressure reaction kettle with the internal volume of 100mL, the reaction kettle is placed in an electric oven with the temperature of 150 ℃ for hydrothermal reaction for 36 hours, and then the solution B is naturally cooled to the room temperature to obtain the solution B.
(3) And adding 0.05mol of tin chloride into the solution B, adding ammonia water to adjust the pH value to 8, and stirring and reacting in a water bath at 95 ℃ for 2 hours to obtain a solution C.
(4) Taking out the obtained solution C, centrifuging, cleaning with hypochlorous acid, and oven drying at 70 deg.C to obtain indium-doped Zn2SnO4A nanowire.
The length-diameter ratio of the nanowire is 70:1, the diameter of the nanowire is 20nm, the indium content is 5 wt%, and the impurity content is lower than 0.05 wt%. When the mass ratio of the zinc stannate nanowire to the silver powder is 12: 88 the resistivity of the silver-based conductive alloy is 2.16 mu omega cm and the tensile strength is 290 MPa.
Example 2
(1) 0.1mol of diethyl zinc was added to 50mL of a 10wt% aqueous solution of ammonium oxalate, and indium nitrate was added to the diethyl zinc solution in an amount of 15mol% of diethyl zinc, and the mixture was heated and stirred at 60 ℃ for 25min to form a uniform solution A.
(2) Then, the solution A is transferred into a high-pressure reaction kettle with the internal volume of 100mL, the reaction kettle is placed in an electric oven with the temperature of 150 ℃ for hydrothermal reaction for 36 hours, and then the solution B is naturally cooled to the room temperature to obtain the solution B.
(3) And adding 0.05mol of tin chloride into the solution B, adding ammonia water to adjust the pH value to 9, and stirring and reacting for 4 hours in a water bath at the temperature of 95 ℃ to obtain a solution C.
(4) Taking out the obtained solution C, centrifuging, cleaning with hypochlorous acid, and oven drying at 70 deg.C to obtain indium-doped Zn2SnO4A nanowire.
The length-diameter ratio of the nanowire is 50:1, the diameter of the nanowire is 50nm, the indium content is 10wt%, and the impurity content is lower than 0.04 wt%. When the mass ratio of the zinc stannate nanowire to the silver powder is 12: 88 the resistivity of the silver-based conductive alloy is 2.08 mu omega cm, and the tensile strength is 285 MPa.
Example 3
(1) 0.1mol of dimethyl zinc is added into 50mL of 10wt% ammonium oxalate aqueous solution, indium chloride is added into the dimethyl zinc solution according to the proportion of 12 mol% of the dimethyl zinc, and the mixture is heated and stirred at 50 ℃ for 25min to form uniform solution A.
(2) Then, the solution A is transferred into a high-pressure reaction kettle with the internal volume of 100mL, the reaction kettle is placed in an electric oven with the temperature of 150 ℃ for hydrothermal reaction for 36 hours, and then the solution B is naturally cooled to the room temperature to obtain the solution B.
(3) And adding 0.05mol of sodium stannate into the solution B, adding ammonia water to adjust the pH value to 9, and stirring and reacting in a water bath at 95 ℃ for 3 hours to obtain a solution C.
(4) Taking out the obtained solution C, centrifuging, cleaning with hypochlorous acid, and oven drying at 70 deg.C to obtain indium-doped Zn2SnO4A nanowire.
The length-diameter ratio of the nanowire is 100:1, the diameter of the nanowire is 30nm, the indium content is 6 wt%, and the impurity content is lower than 0.05 wt%. When the mass ratio of the zinc stannate nanowire to the silver powder is 12: 88 silver-based conductive alloy, the resistivity is 2.15 mu omega cm, and the tensile strength is 303 MPa.
Example 4
(1) 0.1mol of diethyl zinc was added to 50mL of a 5 wt% aqueous solution of ammonium oxalate, and indium nitrate was added to the diethyl zinc solution in an amount of 10 mol% of diethyl zinc, followed by heating and stirring at 60 ℃ for 25min to form a uniform solution A.
(2) Then, the solution A is transferred into a high-pressure reaction kettle with the internal volume of 100mL, the reaction kettle is placed in an electric oven with the temperature of 150 ℃ for hydrothermal reaction for 36 hours, and then the solution B is naturally cooled to the room temperature to obtain the solution B.
(3) And adding 0.05mol of tin chloride into the solution B, adding ammonia water to adjust the pH value to 8.5, and stirring and reacting in a water bath at 95 ℃ for 3 hours to obtain a solution C.
(4) Taking out the obtained solution C, centrifuging, cleaning with hypochlorous acid, and oven drying at 70 deg.C to obtain indium-doped Zn2SnO4A nanowire.
The length-diameter ratio of the nanowire is 80:1, the diameter of the nanowire is 20nm, the indium content is 5 wt%, and the impurity content is lower than 0.03 wt%. When the mass ratio of the zinc stannate nanowire to the silver powder is 12: 88 the resistivity of the silver-based conductive alloy is 2.14 mu omega cm and the tensile strength is 296 MPa.
Example 5
(1) Adding 0.1mol of dimethyl zinc into 50mL of 7 wt% ammonium oxalate aqueous solution, adding indium chloride into the organic zinc salt solution according to the proportion of 15mol% of dimethyl zinc, and heating and stirring at 40 ℃ for 25min to form a uniform solution A.
(2) Then, the solution A is transferred into a high-pressure reaction kettle with the internal volume of 100mL, the reaction kettle is placed in an electric oven with the temperature of 150 ℃ for hydrothermal reaction for 36 hours, and then the solution B is naturally cooled to the room temperature to obtain the solution B.
(3) And adding 0.05mol of sodium stannate into the solution B, adding ammonia water to adjust the pH value to 8, and stirring and reacting for 4 hours in a water bath at 95 ℃ to obtain a solution C.
(4) Taking out the obtained solution C, centrifuging, cleaning with hypochlorous acid, and oven drying at 70 deg.C to obtain indium-doped Zn2SnO4A nanowire.
The length-diameter ratio of the nanowire is 100:1, the diameter of the nanowire is 40nm, the indium content is 8 wt%, and the impurity content is lower than 0.04 wt%. When the mass ratio of the zinc stannate nanowire to the silver powder is 12: 88 the resistivity of the silver-based conductive alloy is 2.11 mu omega cm and the tensile strength is 320 MPa.
Claims (2)
1. Indium-doped Zn2SnO4The preparation method of the nanowire is characterized by comprising the following steps of:
(1) adding 0.1mol of dimethyl zinc or diethyl zinc into 50mL of ammonium oxalate aqueous solution, and then adding indium nitrate or indium chloride; stirring for 25min under the condition of water bath at the temperature of 40-60 ℃ to form uniform solution A; wherein the mass percentage concentration of the ammonium oxalate aqueous solution is 5-10 wt%, and the mol percentage of the indium salt and the organic zinc salt is 10-15 mol%;
(2) transferring the solution A into a reaction kettle, and placing the reaction kettle in an electric oven with the constant temperature of 150 ℃; carrying out hydrothermal reaction for 36h, and naturally cooling to room temperature to obtain a solution B;
(3) adding 0.05mol of stannic chloride or sodium stannate into the solution B, and adjusting the pH value to 8-9 by ammonia water; placing the reaction kettle in a water bath at 95 ℃, and stirring for reaction for 2-4 hours to obtain a solution C;
(4) taking out the solution C, centrifuging, and cleaning with hypochlorous acid; drying the solid product in a 70 ℃ oven to obtain the Zn doped with indium2SnO4A nanowire.
2. Method according to claim 1, characterized in that the finally obtained indium doped Zn2SnO4The length-diameter ratio of the nanowire is 50-100: 1, the diameter of the nanowire is 20-50 nm, and the indium content of the nanowire is 5-10 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811008587.5A CN109133159B (en) | 2018-08-29 | 2018-08-29 | Indium-doped Zn2SnO4Method for preparing nano-wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811008587.5A CN109133159B (en) | 2018-08-29 | 2018-08-29 | Indium-doped Zn2SnO4Method for preparing nano-wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109133159A CN109133159A (en) | 2019-01-04 |
| CN109133159B true CN109133159B (en) | 2020-06-26 |
Family
ID=64825795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811008587.5A Active CN109133159B (en) | 2018-08-29 | 2018-08-29 | Indium-doped Zn2SnO4Method for preparing nano-wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109133159B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111939937B (en) * | 2020-08-26 | 2022-12-27 | 杭州电子科技大学 | Zinc stannate/indium sulfide barbed nanoflower piezoelectric/photocatalyst and preparation method thereof |
| CN114229888A (en) * | 2021-12-31 | 2022-03-25 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of double-layer zinc stannate nanosheet negative electrode material, product and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1884090A (en) * | 2006-05-23 | 2006-12-27 | 南开大学 | ZnIn2S4 nano materials and their synthesis method and application |
| KR20090051827A (en) * | 2007-11-20 | 2009-05-25 | 고려대학교 산학협력단 | Method for manufacturing nanowire transistor |
| CN102637530A (en) * | 2012-01-11 | 2012-08-15 | 南京大学昆山创新研究院 | Method for preparing nano-structured Zn2SnO4 on stainless steel wires |
| CN105565372A (en) * | 2016-03-10 | 2016-05-11 | 天津师范大学 | Preparation method and application of graded zinc stannate sub/micro-sphere material |
| CN106430292A (en) * | 2016-09-21 | 2017-02-22 | 浙江大学 | ZnO@SnO2 dendritic heterostructure nano material and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101920730B1 (en) * | 2011-08-08 | 2018-11-22 | 삼성전자주식회사 | ZnSnO3/ZnO nanowire having core-shell structure, method of forming ZnSnO3/ZnO nanowire and nano generator including ZnSnO3/ZnO nanowire, and method of forming ZnSnO3 nanowire and nano generator including ZnSnO3 nanowire |
| KR102380157B1 (en) * | 2015-03-04 | 2022-03-29 | 삼성디스플레이 주식회사 | Touch panel and display device including the same |
-
2018
- 2018-08-29 CN CN201811008587.5A patent/CN109133159B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1884090A (en) * | 2006-05-23 | 2006-12-27 | 南开大学 | ZnIn2S4 nano materials and their synthesis method and application |
| KR20090051827A (en) * | 2007-11-20 | 2009-05-25 | 고려대학교 산학협력단 | Method for manufacturing nanowire transistor |
| CN102637530A (en) * | 2012-01-11 | 2012-08-15 | 南京大学昆山创新研究院 | Method for preparing nano-structured Zn2SnO4 on stainless steel wires |
| CN105565372A (en) * | 2016-03-10 | 2016-05-11 | 天津师范大学 | Preparation method and application of graded zinc stannate sub/micro-sphere material |
| CN106430292A (en) * | 2016-09-21 | 2017-02-22 | 浙江大学 | ZnO@SnO2 dendritic heterostructure nano material and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| A novel self-catalytic route to zinc stannate nanowires and;Ming Lei等;《Journal of Alloys and Compounds》;20151022;第657卷;394-399 * |
| 秧苗状Zn2SnO4 纳米线的制备及光致发光性能研究;刘中奎;《光散射学报》;20110930;第23卷(第3期);234-237 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109133159A (en) | 2019-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109133159B (en) | Indium-doped Zn2SnO4Method for preparing nano-wire | |
| CN109136667B (en) | Aluminum alloy for hydrogen production and preparation method thereof | |
| CN101246759B (en) | Nano homogeneous phase composite metal oxide conductive powder for transparent conducting material and its preparation method | |
| CN108580917B (en) | Method for preparing tungsten dispersion strengthening copper superfine powder by low-temperature combustion synthesis | |
| CN110216282A (en) | The preparation method of acid bronze alloy contact | |
| CN110227826A (en) | A method of preparing high-purity nm molybdenum powder | |
| CN100417738C (en) | High temperature resistant, anti electric arc corrosion composite rare earth molybdenum alloy and its preparation method | |
| CN108376588B (en) | Preparation method of silver nanowire and nickel oxide composite transparent conductive film | |
| CN103232038A (en) | Preparation method of nano silicon carbide | |
| CN105642884B (en) | A kind of preparation method of the Bi Te base thermoelectricity materials with core shell structure | |
| CN101851007B (en) | Tungsten-molybdenum-based superfine composite oxide solid solution and preparation method thereof | |
| CN108543945A (en) | A kind of external oxidation preparation method of aluminum oxide dispersion copper alloy powder | |
| CN105177348A (en) | High-strength titanium carbide copper-based composite material and preparation method thereof | |
| CN102864325A (en) | Multielement rare earth silver electric contact as well as preparation method and application thereof | |
| CN108439469B (en) | Preparation and application method of silver molybdate nano powder with nearly spherical structure | |
| CN106834792A (en) | Add high intensity, dispersion-strengthened Cu of high conductivity of Rare Earth Lanthanum and preparation method thereof | |
| CN102324284A (en) | A kind of method of manufactured copper alloy cable | |
| CN108408763B (en) | preparation and application method of niobium and indium co-doped nano tin oxide powder | |
| CN101967660B (en) | Method for preparing Nb3Al superconducting material by using electrical co-deoxidization method | |
| CN115710653A (en) | Preparation method of silver metal oxide electrical contact material | |
| CN1202080C (en) | Preparation method of tellurium diethyl dithiocarbamate | |
| CN111554514A (en) | Flexible heterogeneous nanosheet pseudocapacitance positive electrode material and preparation method thereof | |
| Tu et al. | Fundamental Understanding on Selenium Electrochemistry: From Electrolytic Cell to Advanced Energy Storage | |
| CN114369101B (en) | Preparation method of chalcogen organic semiconductor | |
| CN109628794A (en) | A kind of low temperature synthesis Mg3-xZnxSb2The method of (0≤x≤0.3) material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |