CN103232038A - Preparation method of nano silicon carbide - Google Patents
Preparation method of nano silicon carbide Download PDFInfo
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- CN103232038A CN103232038A CN2013101545701A CN201310154570A CN103232038A CN 103232038 A CN103232038 A CN 103232038A CN 2013101545701 A CN2013101545701 A CN 2013101545701A CN 201310154570 A CN201310154570 A CN 201310154570A CN 103232038 A CN103232038 A CN 103232038A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 238000005245 sintering Methods 0.000 claims abstract description 16
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 13
- 239000010439 graphite Substances 0.000 claims abstract description 13
- 238000005406 washing Methods 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 3
- 238000005868 electrolysis reaction Methods 0.000 claims description 20
- 239000003513 alkali Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 238000000748 compression moulding Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 150000003841 chloride salts Chemical class 0.000 claims description 8
- 239000006229 carbon black Substances 0.000 claims description 7
- 230000004927 fusion Effects 0.000 claims description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 5
- 239000008187 granular material Substances 0.000 claims description 5
- 239000003610 charcoal Substances 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 17
- 239000003792 electrolyte Substances 0.000 abstract description 8
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000002156 mixing Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005551 mechanical alloying Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006477 desulfuration reaction Methods 0.000 description 1
- 230000023556 desulfurization Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000006317 isomerization reaction Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000011160 polymer matrix composite Substances 0.000 description 1
- 229920013657 polymer matrix composite Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a preparation method of nano silicon carbide, and belongs to the technical field of nano materials. The preparation method comprises the following steps of: uniformly mixing nano silicon dioxide and a carbon material, tableting a mixture and sintering the mixture as a cathode; using graphite as an anode; placing the cathode and the anode in a molten chloride molten-salt electrolyte; at 500-1000 DEG C, applying a voltage between the cathode and the anode to electrolyze, and sequentially alkali-washing, rinsing and drying a product prepared from the cathode, so as to obtain nano SiC which is high in purity finally. The process has the characteristics of being short in process, low in energy consumption, environmentally-friendly and the like.
Description
Technical field
The present invention relates to a kind of preparation method of nanometer carborundum, especially relate to the electrochemical method of a kind of melting salt, belong to technical field of nano material.
Background technology
SiC is one of of paramount importance compound in the carbide.Silicon carbide is because stable chemical performance, thermal conductivity height, characteristics such as thermal expansivity is little, wear resisting property is good in industrial circles such as metallurgy, machinery, building materials acquisition application widely, also enjoy favor in new and high technology industries such as electronics, aerospace.
The SiC nano material has high energy gap, high critical heat conductance, little specific inductivity, characteristics such as the saturated mobility of higher electronics and good mechanical property become and make high-frequency high-power, less energy-consumption, the electronics of high temperature resistant device and the ideal material of opto-electronic device.
Micron order SiC whisker has been applied to strengthening ceramic base, metal matrix and polymer matrix composite, these matrix materials all show the favorable mechanical performance, and the SiC monodimension nanometer material will make its performance be further enhanced as the wild phase of matrix material.
Nano SiC has advantages such as good thermal conductivity, chemical stability, heat-shock resistance, and can under severe condition such as high temperature, severe corrosive, use, make it become the ideal material of support of the catalyst in the chemical reaction, and be successfully applied in some important chemical reactions, as: the isomerization of the purification of low-temp desulfurization, catalyzed oxidation, vehicle exhaust, methane couple, straight-chain paraffin etc.In addition, high-purity, highly active superfine powder also is the important prerequisite that makes fine and close SiC material.
Industrial employing carbothermic method prepares silicon carbide, and this method production cost is low and the composite powder scale of construction is big, and raw material is cheap and easy to get.But technological process is complicated, and product granularity is thick (more than the μ m), and purity generally is lower than 98%.And the preparation method of nanometer silicon carbide comprises carbothermic method, self propagating high temperature synthesis method, mechanical alloying method, sol-gel method, vapour deposition process etc.Carbothermic method prepares SiC and occupies an leading position in output and scale, the self propagating high temperature synthesis method still need the problem that solves be how can strict control combustion processes to obtain high performance SiC, the mechanical alloying rule is brought metallic impurity easily into and the tendency of reuniting is taken place.Characteristics such as sol-gel preparation technology has with low cost, and technology is simple, but water makes silicon carbide reunion degree height in alkaline environment.Vapour deposition process has advantages such as processing ease, process be controlled, but shortcoming is requirement material purity height, and Heating temperature is low, and product granularity is big, easily reunite, and productive rate is not high yet.
Summary of the invention
For overcoming the deficiencies in the prior art, the present invention proposes a kind of preparation method of nanometer silicon carbide, with the mixture of nano silicon and carbon as negative electrode, anode is set, be placed in the ionogen of molten chloride composition, apply certain voltage and carry out electrolysis between negative electrode and anode, product finally obtains nano SiC through after the alkali cleaning.This technology has characteristics such as flow process is short, energy consumption is low, and is environmentally friendly.
Technical scheme of the present invention is: with nano silicon and carbonaceous material with the mixed of mol ratio 1: 1～2 evenly, behind compression moulding and the sintering as negative electrode, be anode with graphite, negative electrode and anode are put into the electrolysis of fused chloride salt matter that temperature is 500～1000 ℃ of fusions, between negative electrode and anode, apply voltage and carry out electrolysis, the product that negative electrode is prepared passes through alkali cleaning, washing and drying successively then, finally obtains highly purified nano SiC.
Described nano silicon purity is greater than 99%.
Described carbonaceous material is the arbitrary proportion mixture of one or more compositions in graphite, charcoal or the carbon black, and its fixed carbon content is more than the 95wt%, below the particle diameter micron order.
The used pressure of described compression moulding negative electrode is 5MPa～30MPa, and sintering temperature is 500 ℃～1200 ℃.
The electrolysis of fused chloride salt matter of described fusion is CaCl
2, the mixture formed of one or more arbitrary proportions among NaCl or the KCl.
The CaO that needs to add 0～20mol% in the electrolysis of fused chloride salt matter of described fusion.
The voltage that applies between described negative electrode and the anode is higher than 2.5V, is lower than the decomposition voltage of electrolysis of fused chloride salt matter, and electrolysis time is 3～6 hours.
The product alkali cleaning of described negative electrode preparation is that employing concentration is NaOH or the KOH solution of 0.1mol/L～2mol/L, and the alkali cleaning temperature is 25 ℃～50 ℃.
The highly purified nano SiC of described final preparation is that nano particle or the diameter of particle diameter 25～100nm is micron-sized silicon carbide nanometer line less than 100nm, length; When the granularity of used carbonaceous material was nano level or submicron order, finally preparing highly purified nano SiC was that diameter is micron-sized silicon carbide nanometer line less than 100nm, length; When used carbonaceous material was micron order, the granularity that finally prepares the nano SiC of high purity (purity is more than 95wt%) was the nano silicon carbide granulate of 25nm～100nm.
The advantage of preparation method of nanometer carborundum of the present invention and positively effect:
(1) the present invention is raw material with the mixture of nano silicon and carbon, just can prepare nano SiC through fused salt electrolysis, and this technical process is short, simple to operate;
(2) moiety and according to actual needs of the present invention by regulating molten salt electrolyte, reaction can be carried out in 500 ~ 1000 ℃ of scopes, compares traditional preparation process nano SiC technology and has the low advantage of service temperature, has reduced production and cost of processing effectively;
(3) fused salt electrolysis of the present invention prepares the method for nano SiC, if with inert material as anode (for example materials such as oxide ceramics, sintering metal, copper base alloy, nickel-base alloy), then can reach no CO
2Discharging is produced, and is environmentally friendly.
Description of drawings
Fig. 1 is process flow sheet of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
Embodiment one: it is as follows that present embodiment prepares method of nanometer carborundum: be that (carbonaceous material is carbon black for 99% nano silicon and the carbonaceous material of 50nm with purity, its fixed carbon content is more than the 98wt%) with 1: 2 mixed of mol ratio evenly, (pressure is 5MPa as negative electrode behind compression moulding and the sintering, sintering temperature is 1200 ℃), be anode with graphite, negative electrode and anode are put into the CaCl that temperature is 850 ℃ of fusions
2In the ionogen, between negative electrode and anode, apply voltage 2.8V electrolysis 3 hours, the product that negative electrode is prepared passes through alkali cleaning successively (alkali cleaning is that to adopt concentration be the NaOH solution of 0.1mol/L then, temperature is 25 ℃), washing and dry, finally obtain the nano SiC that purity is 96wt%, nano SiC is that diameter is about 50nm, grows about 5 microns silicon carbide nanometer line.
Embodiment two: as shown in Figure 1, it is as follows that present embodiment prepares method of nanometer carborundum: (carbonaceous material is the arbitrary proportion mixture of graphite or carbon black greater than 99% nano silicon and the carbonaceous material of 5 μ m with purity, its fixed carbon content is more than the 98wt%) with 1: 1 mixed of mol ratio evenly, (pressure is 30MPa as negative electrode behind compression moulding and the sintering, sintering temperature is 1000 ℃), be anode with graphite, negative electrode and anode are put into CaCl
2-NaCl(mol ratio is 1: 1) in the fused salt, temperature is 600 ℃, between negative electrode and anode, apply voltage 2.8V and carried out electrolysis 4 hours, the product that negative electrode is prepared passes through alkali cleaning successively (alkali cleaning is that to adopt concentration be the KOH solution of 0.5mol/L then, temperature is 50 ℃), washing and dry, finally obtaining purity is the nano silicon carbide granulate that 96wt%, particle diameter are about 25nm.
Embodiment three: it is as follows that present embodiment prepares method of nanometer carborundum: (carbonaceous material is arbitrary proportion mixture in charcoal or the carbon black greater than 99% nano silicon and the carbonaceous material of 2 μ m with purity, its fixed carbon content is 95wt%) with 1: 2 mixed of mol ratio evenly, (pressure is 15MPa as negative electrode behind compression moulding and the sintering, sintering temperature is 800 ℃), be anode with graphite, with negative electrode and positive C aCl
2-NaCl-KCl(mol ratio 2: 1: 1) in the fused salt mixt ionogen, temperature is 850 ℃, between negative electrode and anode, apply voltage 3.1V and carried out electrolysis 6 hours, the product that negative electrode is prepared passes through alkali cleaning successively (alkali cleaning is that to adopt alkali metal concn be the KOH solution of 0.1mol/L then, the temperature of KOH solution is 30 ℃), washing and dry, finally obtaining purity is that 97wt%, particle diameter are about the 80nm nano SiC granule.
Embodiment four: it is as follows that present embodiment prepares method of nanometer carborundum: (carbonaceous material is arbitrary proportion mixture in graphite or the carbon black greater than 95% nano silicon and the carbonaceous material of 5 μ m with purity, its fixed carbon content is 98wt%) mix with 1: 1.5 example of mol ratio, (pressure is 15MPa as negative electrode behind compression moulding and the sintering, sintering temperature is 800 ℃), be anode with graphite, it is 1000 ℃ of melt metal compound molten salt electrolytes that negative electrode and anode are put into temperature: KCl(melt metal compound molten salt electrolyte adds the CaO of metallic compound molten salt electrolyte 10mol%), between negative electrode and anode, apply voltage 2.5V and carried out electrolysis 6 hours, the product that negative electrode is prepared passes through alkali cleaning successively (alkali cleaning is that to adopt alkali metal concn be the KOH solution of 10mol/L then, the temperature of KOH solution is 30 ℃), washing and dry, finally obtaining purity is 97wt%, particle diameter is about the 100nm nano SiC granule.
Embodiment five: it is as follows that present embodiment prepares method of nanometer carborundum: (carbonaceous material is arbitrary proportion mixture in graphite or the carbon black greater than 95% nano silicon and the carbonaceous material of 3 μ m with purity, its fixed carbon content is 98wt%) with mol ratio mix at 1: 1.5, (pressure is 15MPa as negative electrode behind compression moulding and the sintering, sintering temperature is 500 ℃), be anode with graphite, it is 500 ℃ of melt metal compound molten salt electrolyte: CaCl that negative electrode and anode are put into temperature
2In (CaO that adds metallic compound molten salt electrolyte 20mol% in the melt metal compound molten salt electrolyte), between negative electrode and anode, apply voltage 2.5V and carried out electrolysis 6 hours, the product that negative electrode is prepared passes through alkali cleaning successively (alkali cleaning is that to adopt alkali metal concn be the KOH solution of 2mol/L then, the temperature of KOH solution is 50 ℃), washing and dry, finally obtaining purity is the sodium rice SiC particle that 95.2wt%, particle diameter are about 100nm.
Below by reference to the accompanying drawings the specific embodiment of the present invention has been done detailed description, but the present invention is not limited to above-mentioned embodiment, in the ken that those of ordinary skills possess, can also under the prerequisite that does not break away from aim of the present invention, make various variations.
Claims (8)
1. the preparation method of a nanometer silicon carbide, it is as follows to it is characterized in that concrete steps comprise: with nano silicon and carbonaceous material with the mixed of mol ratio 1: 1～2 evenly, behind compression moulding and the sintering as negative electrode, be anode with graphite, negative electrode and anode are put into the electrolysis of fused chloride salt matter that temperature is 500～1000 ℃ of fusions, between negative electrode and anode, apply voltage and carry out electrolysis, the product that negative electrode is prepared passes through alkali cleaning, washing and drying successively then, finally obtains highly purified nanometer silicon carbide.
2. the preparation method of nanometer silicon carbide according to claim 1, it is characterized in that: described carbonaceous material is the arbitrary proportion mixture of one or more compositions in graphite, charcoal or the carbon black, more than its fixed carbon content 95wt%, below the particle diameter micron order.
3. the preparation method of nanometer silicon carbide according to claim 1, it is characterized in that: the used pressure of described compression moulding negative electrode is 5MPa～30MPa, sintering temperature is 500 ℃～1200 ℃.
4. the preparation method of nanometer silicon carbide according to claim 1, it is characterized in that: the electrolysis of fused chloride salt matter of described fusion is CaCl
2, the mixture formed of one or more arbitrary proportions among NaCl or the KCl.
5. according to the preparation method of claim 1 or 4 described nanometer silicon carbides, it is characterized in that: the CaO that needs to add 0～20mol% in the electrolysis of fused chloride salt matter of described fusion.
6. the preparation method of nanometer silicon carbide according to claim 1, it is characterized in that: the voltage that applies between described negative electrode and the anode is higher than 2.5V, is lower than the decomposition voltage of electrolysis of fused chloride salt matter, and electrolysis time is 3～6 hours.
7. the preparation method of nanometer silicon carbide according to claim 1 is characterized in that: the product alkali cleaning of described negative electrode preparation is that to adopt concentration be NaOH or the KOH solution of 0.1mol/L～2mol/L, and the alkali cleaning temperature is 25 ℃～50 ℃.
8. the preparation method of nanometer silicon carbide according to claim 1, it is characterized in that: the highly purified nano SiC of described final preparation is that nano particle or the diameter of particle diameter 25～100nm is micron-sized silicon carbide nanometer line less than 100nm, length; When the granularity of used carbonaceous material was nano level or submicron order, finally preparing highly purified nano SiC was that diameter is micron-sized silicon carbide nanometer line less than 100nm, length; When used carbonaceous material was micron order, the granularity that finally prepares highly purified nano SiC was the nano silicon carbide granulate of 25nm～100nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104401996A (en) * | 2014-11-03 | 2015-03-11 | 山东金蒙新材料股份有限公司 | New nano silicon carbide material and preparation method and application thereof |
| CN106816598A (en) * | 2015-11-30 | 2017-06-09 | 北京有色金属研究总院 | A kind of Si/SiC composites for lithium ion battery, its preparation method and the negative pole and battery that are prepared by the material |
| CN108640117A (en) * | 2018-05-10 | 2018-10-12 | 南昌航空大学 | One kind synthesizing two dimension SiC ultrathin nanometer structures and preparation method thereof by template molten-salt growth method of graphene |
| CN111591995A (en) * | 2020-06-22 | 2020-08-28 | 黑龙江冠瓷科技有限公司 | Preparation method of nano silicon carbide particles based on NaF shape regulator |
| CN113991099A (en) * | 2021-10-27 | 2022-01-28 | 昆明理工大学 | Method for preparing nano silicon-based negative electrode material from silicon cutting waste |
| CN114956087A (en) * | 2022-04-20 | 2022-08-30 | 长沙宁曦新材料有限公司 | Method for preparing nano silicon carbide by alkaline solution etching |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104401996A (en) * | 2014-11-03 | 2015-03-11 | 山东金蒙新材料股份有限公司 | New nano silicon carbide material and preparation method and application thereof |
| CN106816598A (en) * | 2015-11-30 | 2017-06-09 | 北京有色金属研究总院 | A kind of Si/SiC composites for lithium ion battery, its preparation method and the negative pole and battery that are prepared by the material |
| CN106816598B (en) * | 2015-11-30 | 2020-04-14 | 北京有色金属研究总院 | Si/SiC composite material for lithium ion battery, preparation method thereof, and cathode and battery prepared from material |
| CN108640117A (en) * | 2018-05-10 | 2018-10-12 | 南昌航空大学 | One kind synthesizing two dimension SiC ultrathin nanometer structures and preparation method thereof by template molten-salt growth method of graphene |
| CN108640117B (en) * | 2018-05-10 | 2022-03-25 | 南昌航空大学 | Two-dimensional SiC ultrathin nanostructure synthesized by molten salt method with graphene as template and preparation method thereof |
| CN111591995A (en) * | 2020-06-22 | 2020-08-28 | 黑龙江冠瓷科技有限公司 | Preparation method of nano silicon carbide particles based on NaF shape regulator |
| CN111591995B (en) * | 2020-06-22 | 2021-08-13 | 黑龙江冠瓷科技有限公司 | Preparation method of nano silicon carbide particles based on NaF shape regulator |
| CN113991099A (en) * | 2021-10-27 | 2022-01-28 | 昆明理工大学 | Method for preparing nano silicon-based negative electrode material from silicon cutting waste |
| CN114956087A (en) * | 2022-04-20 | 2022-08-30 | 长沙宁曦新材料有限公司 | Method for preparing nano silicon carbide by alkaline solution etching |
| CN114956087B (en) * | 2022-04-20 | 2024-01-16 | 长沙宁曦新材料有限公司 | Method for preparing nano silicon carbide by etching alkali solution |
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Application publication date: 20130807 |