CN109119870A - The super diffraction focusing image-forming system in integrated THz wave far field - Google Patents
The super diffraction focusing image-forming system in integrated THz wave far field Download PDFInfo
- Publication number
- CN109119870A CN109119870A CN201811024086.6A CN201811024086A CN109119870A CN 109119870 A CN109119870 A CN 109119870A CN 201811024086 A CN201811024086 A CN 201811024086A CN 109119870 A CN109119870 A CN 109119870A
- Authority
- CN
- China
- Prior art keywords
- thz wave
- focus device
- control circuit
- driving circuit
- far field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses the super diffraction focusing image-forming systems in integrated THz wave far field, are related to THz wave technical field of imaging, solve existing THz wave imaging technique, although realizing super-resolution focus, are all based near field optic principle；Existing imaging technique has that focal length is minimum, can not dynamically focus, narrower width, diffraction efficiency are lower, its key points of the technical solution are that: including Terahertz wave source, optical pumping, THz wave focus device and main control circuit；The Terahertz wave source is for emitting THz wave；The optical pumping is for irradiating the THz wave focus device after generating lasting visible light；The THz wave focus device for changing the THz wave transmissivity；The main control circuit has the effect of increasing focal length, super resolution rate, dynamic focusing, broadening broadband, improves diffraction efficiency for being biased to the THz wave focus device.
Description
Technical field
The present invention relates to THz wave technical field of imaging, more specifically, it relates to integrated THz wave far field
Super diffraction focusing image-forming system.
Background technique
THz wave refers to that frequency is the electromagnetic wave of 0.1~10THz, which includes spectral information abundant, such as albumen
Macromolecular rotation/oscillation spectrum, solid material lattice vibration power spectrum including matter etc..Compared with microwave and light wave, THz wave
, the characteristics such as penetration power strong, highly-safe, spectral information abundant low with energy, in non-destructive testing, safety check, medical imaging and logical
The fields such as letter are with important application prospects.
The development and application of THz imaging technology propose higher demand to focal beam spot, imaging resolution.In recent years
Come, has been achieved with some progress in the Terahertz super-resolution imaging of near field optic, focusing in the world.Such as 2003, U.S.'s human relations this
Strangle the terahertz imaging resolution ratio@2THz that the Institute of Technology obtains 150nm using scanning near-field optical microtechnic.2016,
Northeastern Japan university devises a kind of super lens being made of multiple slits and bar array, and it is 20 μ that emulation, which obtains focusing spot,
m.2016, the state university of Oregon, America devised a kind of hyperbola Meta Materials based on two-dimensional sub-wavelength silicon column array structure
Focus lamp obtains the focal spot of super diffraction at 2.5 λ of focal length.
Existing THz wave imaging technique is all based near field optic principle although realizing super-resolution focus；It deposits
Focal length it is minimum, can not dynamically focus, narrower width, lower diffraction efficiency the problems such as.
Summary of the invention
The object of the present invention is to provide the super diffraction focusing image-forming systems in integrated THz wave far field, have and increase coke
Away from, super resolution rate, dynamic focusing, broadening broadband, raising diffraction efficiency effect.
Above-mentioned technical purpose of the invention has the technical scheme that integrated THz wave far field
Super diffraction focusing image-forming system, including Terahertz wave source, optical pumping, THz wave focus device and main control circuit；
The Terahertz wave source is for emitting THz wave；
The optical pumping is for irradiating the THz wave focus device after generating lasting visible light；
The THz wave focus device for changing the THz wave transmissivity, to realize that the THz wave is remote
Field diffraction focuses；
The main control circuit is for being biased the THz wave focus device, to realize that the THz wave is poly-
Burnt device dynamic focusing.
By using above-mentioned technical proposal, using optical pumping, so that THz wave focus device generates photo-generated carrier；Benefit
It is super convenient for increasing focusing focal length, broadening broadband and raising THz wave that THz wave focuses with THz wave focus device
Diffraction resolution；Using main control circuit, convenient for carrying out dynamic focusing to THz wave focus device.
The present invention is further arranged to: the THz wave focus device includes silicon layer and multiple abuts with silicon surface
Graphene layer；Shape, multiple graphene layers are arranged concentrically the graphene layer in a ring, and spacing is equal between adjoining graphite alkene layer；
The insulating layer abutted with silicon layer is equipped between the adjacent graphene layer；The surface of insulating layer is covered with conductive layer, conductive
Layer two sides are contradicted with adjoining graphite alkene layer respectively.
By using above-mentioned technical proposal, using the graphene layer of multiple ring-shaped, on the graphene layer of different radii
Apply different biass, so that THz wave focus device exit facet forms the Transmission field point with sub-wavelength spatial resolution
Cloth breaches THz wave diffraction limit convenient for obtaining hyperoscillating focal spot in far field, reaches the imaging of far field high-resolution optics.
The present invention is further arranged to: the main control circuit includes active driving circuit, column data driving circuit, line number
According to driving circuit and sequential control circuit；The sequential control circuit and column data driving circuit and row data drive circuit connect
It connects；The active driving circuit is connect with column data driving circuit and row data drive circuit；
The column data driving circuit includes column shift register, the first latch group, the second latch group sum number type matrix
Quasi- converter group；
The row data drive circuit includes row shift register, level shifter group and buffering driver group；
The active driving circuit includes NMOS switch pipe and storage capacitance.
By using above-mentioned technical proposal, line scan signals Row controls the unlatching or cut-off of NMOS switch pipe；When row is swept
Retouch signal Row be high level when, NMOS switch pipe open, column data signal Column by NMOS switch pipe be transferred to storage electricity
Rong Zhong；When line scan signals Row is low level, NMOS switch pipe cut-off, storage capacitance keeps voltage；Convenient for active matrix driving
The case where circuit constantly refreshes, and reduces NMOS switch tube leakage current occurs.
The present invention is further arranged to: the active matrix driving array size of the active driving circuit is 16 × 16 arrays.
By using above-mentioned technical proposal, convenient for enhancing the flexibility for carrying out dynamic focusing to THz wave focus device.
The present invention is further arranged to: the range that the main control circuit is biased is 0-5V.
By using above-mentioned technical proposal, so as to the super-resolution focus imaging operation side of different wave length and different focal length
Just.
In conclusion the invention has the following advantages: using optical pumping, so that THz wave focus device generates light
Raw carrier；Using THz wave focus device, convenient for increasing focusing focal length, broadening broadband and the raising that THz wave focuses
THz wave subwavelength resolution；Using main control circuit, convenient for carrying out dynamic focusing to THz wave focus device；Convenient for
Far field obtains hyperoscillating focal spot, breaches THz wave diffraction limit, reaches the imaging of far field high-resolution optics；Convenient for active drive
The case where dynamic circuit constantly refreshes, and reduces NMOS switch tube leakage current occurs.
Detailed description of the invention
Fig. 1 is the architecture diagram in the embodiment of the present invention；
Fig. 2 is the overall structure diagram of THz wave focus device in the embodiment of the present invention；
Fig. 3 is the partial schematic diagram after THz wave focus device is splitted in the embodiment of the present invention；
Fig. 4 is the schematic diagram of main control circuit in the embodiment of the present invention；
Fig. 5 is the circuit diagram of active driving circuit in the embodiment of the present invention.
In figure: 1, optical pumping；2, THz wave focus device；21, silicon layer；22, graphene layer；23, conductive layer；24, absolutely
Edge layer；3, main control circuit；4, Terahertz wave source；5, column data driving circuit；51, column shift register；52, the first latch
Group；53, the second latch group；54, digital analog converter group；6, row data drive circuit；61, row shift register；62, electric
Translational shifting device group；63, buffering driver group；7, sequential control circuit；8, active driving circuit；81, NMOS switch pipe；82, it deposits
Storage is held.
Specific embodiment
Below in conjunction with attached drawing 1-5, invention is further described in detail.
Embodiment: the super diffraction focusing image-forming system in integrated THz wave far field, as shown in Figure 1, including THz wave
Source 4, optical pumping 1, THz wave focus device 2 and main control circuit 3.Terahertz wave source 4 is for emitting THz wave.Optical pumping
1 for irradiating THz wave focus device 2 after generating lasting visible light.THz wave focus device 2 is for changing THz wave
Transmissivity, with realize THz wave far field construction focus.Main control circuit 3 is for applying partially THz wave focus device 2
Pressure, to realize that THz wave focus device 2 is dynamically focused.Using optical pumping 1, so that THz wave focus device 2 generates photoproduction
Carrier；Using THz wave focus device 2, convenient for increasing focusing focal length, broadening broadband and the raising that THz wave focuses
THz wave subwavelength resolution；Using main control circuit 3, convenient for carrying out dynamic focusing to THz wave focus device 2.
As shown in Figure 2 and Figure 3, THz wave focus device 2 includes silicon layer 21 and multiple stones abutted with 21 surface of silicon layer
Black alkene layer 22.Shape, multiple graphene layers 22 are arranged concentrically graphene layer 22 in a ring, spacing phase between adjoining graphite alkene layer 22
Deng.The insulating layer 24 abutted with silicon layer 21 is equipped between adjoining graphite alkene layer 22.24 surface of insulating layer is covered with conductive layer 23,
23 two sides of conductive layer are contradicted with adjoining graphite alkene layer 22 respectively.Using the graphene layer 22 of multiple ring-shaped, in different radii
Apply different biass on graphene layer 22, so that 2 exit facet of THz wave focus device, which is formed, has sub-wavelength spatial resolution
Transmission field distribution, convenient for far field obtain hyperoscillating focal spot, breach THz wave diffraction limit, reach far field high-resolution
Optical imagery.
As shown in figs. 4 and 5, main control circuit 3 includes active driving circuit 8, column data driving circuit 5, the drive of row data
Dynamic circuit 6 and sequential control circuit 7.Sequential control circuit 7 is connect with column data driving circuit 5 and row data drive circuit 6.Have
Source driving circuit 8 is connect with column data driving circuit 5 and row data drive circuit 6.
As shown in figure 4, column data driving circuit 5 includes the column shift register 51 connecting with sequential control circuit 7, the
One latch group 52, the second latch group 53 and digital analog converter group 54, column shift register 51 and the first latch group
52 connections, the first latch group 52 are connect with the second latch group 53, the second latch group 53 and digital analog converter group 54
Connection, sequential control circuit 7 are used for nematic shift register 51, the first latch group 52,53 sum number type matrix of the second latch group
Quasi- converter group 54 issues control signal.
As shown in figure 4, row data drive circuit 6 includes row shift register 61, level shifter group 62 and buffered-display driver
Device group 63, sequential control circuit 7 are connect with row shift register 61, and row shift register 61 is connect with level shifter group 62,
Level shifter group 62 is connect with buffering driver group 63.
As shown in figs. 4 and 5, active driving circuit 8 includes NMOS switch pipe 81 and storage capacitance 82.THz wave focuses
Graphene layer 22 in device 2 is grounded, and silicon layer 21 is connect with the output end of storage capacitance 82.Line scan signals Row controls NMOS
The unlatching or cut-off of switching tube 81.When line scan signals Row is high level, NMOS switch pipe 81 is opened, column data signal
Column is transferred in storage capacitance 82 by NMOS switch pipe 81.When line scan signals Row is low level, NMOS switch pipe
81 cut-offs, storage capacitance 82 keep voltage.Convenient for constantly refreshing to active driving circuit 8,81 leakage current of NMOS switch pipe is reduced
The case where occur.
As shown in figure 4, the active matrix driving array size of active driving circuit 8 uses 16 × 16 arrays in the present embodiment.Just
The flexibility of dynamic focusing is carried out to THz wave focus device 2 in enhancing.
As shown in figure 4, the range that main control circuit 3 is biased is 0-5V.So that different wave length and different focal length
Super-resolution focus imaging operation it is convenient.
Working principle: utilizing optical pumping 1, so that THz wave focus device 2 generates photo-generated carrier；Utilize THz wave
Focus device 2 is differentiated convenient for increasing focusing focal length, broadening broadband and the super diffraction of raising THz wave that THz wave focuses
Rate；Using main control circuit 3, convenient for carrying out dynamic focusing to THz wave focus device 2.
This specific embodiment is only explanation of the invention, is not limitation of the present invention, those skilled in the art
Member can according to need the modification that not creative contribution is made to the present embodiment after reading this specification, but as long as at this
All by the protection of Patent Law in the scope of the claims of invention.
Claims (5)
1. the super diffraction focusing image-forming system in integrated THz wave far field, it is characterized in that: including Terahertz wave source (4), optical pumping
Pu (1), THz wave focus device (2) and main control circuit (3)；
The Terahertz wave source (4) is for emitting THz wave；
The optical pumping (1) is for irradiating the THz wave focus device (2) after generating lasting visible light；
The THz wave focus device (2) for changing the THz wave transmissivity, to realize that the THz wave is remote
Field diffraction focuses；
The main control circuit (3) is for being biased the THz wave focus device (2), to realize the THz wave
Focus device (2) dynamic is focused.
2. the super diffraction focusing image-forming system in integrated THz wave far field according to claim 1, it is characterized in that: described
THz wave focus device (2) includes silicon layer (21) and multiple graphene layers (22) abutted with silicon layer (21) surface；The stone
Shape, multiple graphene layers (22) are arranged concentrically black alkene layer (22) in a ring, and spacing is equal between adjoining graphite alkene layer (22)；It is adjacent
The insulating layer (24) abutted with silicon layer (21) is equipped between the graphene layer (22)；Insulating layer (24) surface is covered with
Conductive layer (23), conductive layer (23) two sides are contradicted with adjoining graphite alkene layer (22) respectively.
3. the super diffraction focusing image-forming system in integrated THz wave far field according to claim 1, it is characterized in that: described
Main control circuit (3) includes active driving circuit (8), column data driving circuit (5), row data drive circuit (6) and timing control
Circuit (7) processed；The sequential control circuit (7) connect with column data driving circuit (5) and row data drive circuit (6)；It is described
Active driving circuit (8) is connect with column data driving circuit (5) and row data drive circuit (6)；
The column data driving circuit (5) includes column shift register (51), the first latch group (52), the second latch group
(53) and digital analog converter group (54)；
The row data drive circuit (6) includes row shift register (61), level shifter group (62) and buffering driver group
(63)；
The active driving circuit (8) includes NMOS switch pipe (81) and storage capacitance (82).
4. the super diffraction focusing image-forming system in integrated THz wave far field according to claim 3, it is characterized in that: described active
The active matrix driving array size of driving circuit (8) is 16 × 16 arrays.
5. the super diffraction focusing image-forming system in integrated THz wave far field according to claim 1, it is characterized in that: described
The range that main control circuit (3) is biased is 0-5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811024086.6A CN109119870B (en) | 2018-09-04 | 2018-09-04 | Integrated terahertz wave far field super-diffraction focusing imaging system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811024086.6A CN109119870B (en) | 2018-09-04 | 2018-09-04 | Integrated terahertz wave far field super-diffraction focusing imaging system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109119870A true CN109119870A (en) | 2019-01-01 |
| CN109119870B CN109119870B (en) | 2020-11-24 |
Family
ID=64861886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811024086.6A Active CN109119870B (en) | 2018-09-04 | 2018-09-04 | Integrated terahertz wave far field super-diffraction focusing imaging system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109119870B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112557762A (en) * | 2019-09-25 | 2021-03-26 | 天津大学 | High-precision terahertz near field imaging array unit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103499392A (en) * | 2013-09-26 | 2014-01-08 | 中国工程物理研究院流体物理研究所 | TeraHertz-wave far-field detection super-diffraction resolution imaging instrument |
| US8716685B1 (en) * | 2012-12-27 | 2014-05-06 | The Aerospace Corporation | Systems and methods for use in generating pulsed terahertz radiation |
| CN105449494A (en) * | 2015-12-17 | 2016-03-30 | 天津大学 | Internal modulation terahertz source based on waveguide structure and internal modulation method thereof |
| CN106526723A (en) * | 2016-12-21 | 2017-03-22 | 中国工程物理研究院激光聚变研究中心 | Super diffraction limit terahertz focusing device |
| CN106950621A (en) * | 2017-04-26 | 2017-07-14 | 北京大学 | A kind of broadband low loss Terahertz far field super lenses and its imaging method |
| US20180203212A1 (en) * | 2017-01-19 | 2018-07-19 | Archit Lens Technology Inc. | Terahertz-gigahertz fisheye lens system |
-
2018
- 2018-09-04 CN CN201811024086.6A patent/CN109119870B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8716685B1 (en) * | 2012-12-27 | 2014-05-06 | The Aerospace Corporation | Systems and methods for use in generating pulsed terahertz radiation |
| CN103499392A (en) * | 2013-09-26 | 2014-01-08 | 中国工程物理研究院流体物理研究所 | TeraHertz-wave far-field detection super-diffraction resolution imaging instrument |
| CN105449494A (en) * | 2015-12-17 | 2016-03-30 | 天津大学 | Internal modulation terahertz source based on waveguide structure and internal modulation method thereof |
| CN106526723A (en) * | 2016-12-21 | 2017-03-22 | 中国工程物理研究院激光聚变研究中心 | Super diffraction limit terahertz focusing device |
| US20180203212A1 (en) * | 2017-01-19 | 2018-07-19 | Archit Lens Technology Inc. | Terahertz-gigahertz fisheye lens system |
| CN106950621A (en) * | 2017-04-26 | 2017-07-14 | 北京大学 | A kind of broadband low loss Terahertz far field super lenses and its imaging method |
Non-Patent Citations (1)
| Title |
|---|
| JIU-SHENG LI: "Tunable focus graphene-based terahertz lens", 《OPTICS COMMUNICATIONS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112557762A (en) * | 2019-09-25 | 2021-03-26 | 天津大学 | High-precision terahertz near field imaging array unit |
| CN112557762B (en) * | 2019-09-25 | 2022-09-02 | 天津大学 | High-precision terahertz near field imaging array unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109119870B (en) | 2020-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10084239B2 (en) | RF diffractive element with dynamically writable sub-wavelength pattern spatial definition | |
| CN103487421B (en) | Time gate wide field stimulated radiation super-resolution microscopic method and device | |
| US20180041743A1 (en) | Magneto photonic encoder | |
| EP2541299B1 (en) | Microscope device, optical pickup device, and light irradiation device | |
| Zhu et al. | Experimental demonstration of basic functionalities for 0.1-THz orbital angular momentum (OAM) communications | |
| Guan et al. | Demonstration of a free-space optical communication system using a solar-pumped laser as signal transmitter | |
| CN110164480B (en) | Graphene-based dynamically tunable optical holographic structure | |
| JP2013545124A (en) | High filling ratio electron beam steering | |
| CN109119870A (en) | The super diffraction focusing image-forming system in integrated THz wave far field | |
| Akın et al. | High-efficiency low-crosstalk dielectric metasurfaces of mid-wave infrared focal plane arrays | |
| CN113690624B (en) | Vortex optical spatial modulator based on geometric phase super-surface | |
| Clevenson et al. | Incoherent light imaging using an optical phased array | |
| Zeng et al. | Review and prospect of single-shot ultrafast optical imaging by active detection | |
| Wang et al. | High linearly polarized light emission from InGaN light-emitting diode with multilayer dielectric/metal wire-grid structure | |
| JP4332425B2 (en) | Active optical system for phase shifting a desired portion of an incident optical wavefront | |
| CN109031685A (en) | A kind of super diffraction focus device of restructural THz wave based on regulating and controlling voltage | |
| CN112731783B (en) | High-flux single-pixel holographic imaging method and system | |
| CN104330929A (en) | Light control chip based on electric control liquid crystal dual-mode micro lens | |
| Li et al. | Active metasurfaces based on phase transition material vanadium dioxide | |
| CN106204486A (en) | A kind of micro-cell imaging device and method of near-infrared fluorescent based on Hadamard transform | |
| US4999502A (en) | Device for generating an infrared image | |
| Yang et al. | A design method of optical phased array with insufficient phase tuning range | |
| Xu et al. | A scanning-free wide-field single-fiber endoscopic image retrieval method based on optical transmission matrix | |
| US7102809B2 (en) | Acoustic-optic devices utilizing tellurium crystals | |
| CN109889707B (en) | Paper sheet imaging system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |