CN109119482A - A kind of field-effect tube and preparation method thereof - Google Patents
A kind of field-effect tube and preparation method thereof Download PDFInfo
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- CN109119482A CN109119482A CN201811071360.5A CN201811071360A CN109119482A CN 109119482 A CN109119482 A CN 109119482A CN 201811071360 A CN201811071360 A CN 201811071360A CN 109119482 A CN109119482 A CN 109119482A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention provides a kind of field-effect tube and preparation method thereof, comprising: in the first epitaxial layer of one conduction type of upper surface of substrate growth regulation of the first conduction type；Inverted T shaped first groove and second groove are formed in first epitaxial layer；The first injection region of the second conduction type connecting with the first groove bottom is formed in first epitaxial layer, and the second epitaxial layer of the second conduction type connecting with first injection region is formed in the first groove bottom, the third epitaxial layer of the second conduction type of the second epitaxial layer connection is formed in the first groove；The fourth epitaxial layer of the second conduction type is formed in the second groove bottom, forms the 5th epitaxial layer of the first conduction type in the second groove；Source electrode and gate structure are formed in first epitaxial layer upper surface；The drain electrode connecting with the substrate is formed, in the lower surface of the substrate so as to also reduce conducting resistance while promoting breakdown voltage.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of field-effect tube and preparation method thereof.
Background technique
Drain-source the two poles of the earth of field-effect tube (such as VDMOS) in the two sides of device, make electric current in device inside vertical current respectively
It is logical, current density is increased, rated current is improved, the conducting resistance of unit area is also smaller, is that a kind of purposes is very extensive
Power device.For power device, there are two particularly important parameters, and one is conducting resistance, the other is breakdown
Voltage wishes that conducting resistance is small as far as possible for application, and the higher the better for breakdown voltage.Power device is high electric in order to bear
Pressure is needed using very thick low-doped epitaxial layer.By increasing epitaxy layer thickness or reducing the doping concentration of epitaxial layer, Ke Yiti
High-breakdown-voltage, but do so while, improves conducting resistance, is unfavorable for reducing power loss when break-over of device.Thus
As it can be seen that be difficult to the two parameters while optimizing.
Summary of the invention
The present invention is based on the above problems, proposes a kind of field-effect tube and preparation method thereof, can puncture being promoted
Conducting resistance is also reduced while voltage.
In view of this, on the one hand the embodiment of the present invention proposes a kind of field-effect tube, which includes:
The substrate of first conduction type；
First epitaxial layer of the first conduction type, is grown on the upper surface of substrate；
The first groove of inverted T-shaped is formed in first epitaxial layer；
First injection region of the second conduction type is formed in first epitaxial layer and connects with the first groove bottom
It connects；Second epitaxial layer of the second conduction type is formed in the first groove bottom and connect with first injection region；Second
The third epitaxial layer of conduction type is formed in the first groove and connect with second epitaxial layer；
The second groove of drum is formed in first epitaxial layer；
The fourth epitaxial layer of second conduction type is formed in the of the second groove bottom and the first conduction type
Five epitaxial layers are formed in the second groove and connect with the fourth epitaxial layer upper surface；
Source electrode and gate structure, are formed in first epitaxial layer upper surface, the body area of the source electrode and gate structure with
The first groove partly overlaps connection, and the body area of the source electrode and gate structure be set to two first grooves it
Between, the gate structure of the source electrode and gate structure is connect with the second groove upper surface；
Drain electrode, is formed in the lower surface of the substrate and connect with the substrate.
Further, the doping concentration of first injection region is higher than the doping concentration of second epitaxial layer, and described the
The doping concentration of two epitaxial layers is higher than the doping concentration of the third epitaxial layer, and the doping concentration of the 5th epitaxial layer is higher than institute
State the doping concentration of the first epitaxial layer.
Further, third epitaxial layer upper surface and the first groove upper surface maintain an equal level, the 5th epitaxial layer
Upper surface and the second groove upper surface maintain an equal level, wherein side of the side of the third epitaxial layer without departing from the body area.
Further, the body area of the source electrode and gate structure respectively with second epitaxial layer and the third epitaxial layer
Connection.
Further, the quantity at least two of the first groove, two first grooves are relative to the source electrode
It is symmetrical arranged with the body area of gate structure, and the second groove is set to the side of two first grooves.
On the other hand the embodiment of the present invention provides a kind of production method of field-effect tube, this method comprises:
The substrate of first conduction type is provided；
First epitaxial layer of one conduction type of surface growth regulation over the substrate；
Inverted T shaped first groove is formed in first epitaxial layer；
The first injection of the second conduction type connecting with the first groove bottom is formed in first epitaxial layer
Area, and the second epitaxial layer of the second conduction type connecting with first injection region is formed in the first groove bottom,
The third epitaxial layer of the second conduction type of the second epitaxial layer connection is formed in the first groove；
The second groove of drum is formed in first epitaxial layer；
The second groove bottom formed the second conduction type fourth epitaxial layer, in the second groove formed with
5th epitaxial layer of the first conduction type of the fourth epitaxial layer upper surface connection；
Form source electrode and gate structure in first epitaxial layer upper surface, by the body area of the source electrode and gate structure with
The first groove partly overlaps connection, and the source electrode and gate structure are set between two first grooves, will
The gate structure of the source electrode and gate structure is connect with the second groove upper surface；
The drain electrode connecting with the substrate is formed in the lower surface of the substrate.
Further, the doping concentration of first injection region is higher than the doping concentration of second epitaxial layer, and described the
The doping concentration of two epitaxial layers is higher than the doping concentration of the third epitaxial layer, and the doping concentration of the 5th epitaxial layer is higher than institute
State the doping concentration of the first epitaxial layer.
Further, third epitaxial layer upper surface and the first groove upper surface are maintained an equal level, and by the described 5th
Epitaxial layer upper surface and the second groove upper surface maintain an equal level, wherein the side of the third epitaxial layer is without departing from the body area
Side.
Further, by the body area of the source electrode and gate structure respectively with second epitaxial layer and the third extension
Layer connection.
Further, the quantity at least two of the first groove, by two first grooves relative to the source
Pole and the body area of gate structure are symmetrical arranged, and the second groove is set to the side of two first grooves.
The technical solution of the embodiment of the present invention is by providing the substrate of the first conduction type；Surface is grown over the substrate
First epitaxial layer of the first conduction type；Inverted T shaped first groove is formed in first epitaxial layer；In first extension
The first injection region of the second conduction type connecting with the first groove bottom is formed in layer, and in the first groove bottom
The second epitaxial layer for forming the second conduction type connecting with first injection region is formed in described in the first groove
The third epitaxial layer of second conduction type of the second epitaxial layer connection；The second ditch of drum is formed in first epitaxial layer
Slot；The second groove bottom formed the second conduction type fourth epitaxial layer, in the second groove formed with it is described
5th epitaxial layer of the first conduction type of fourth epitaxial layer upper surface connection；Source electrode is formed in first epitaxial layer upper surface
And gate structure, the body area of the source electrode and gate structure is partly overlapped with the first groove and is connect, and by the source electrode
And gate structure is set between two first grooves, by the gate structure of the source electrode and gate structure and described second
The connection of groove upper surface；The drain electrode connecting with the substrate is formed in the lower surface of the substrate.The present invention can be hit in promotion
Conducting resistance is also reduced while wearing voltage.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below to needed in embodiment description
Attached drawing is briefly described, it should be apparent that, drawings in the following description are some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the flow diagram of the production method for the field-effect tube that one embodiment of the present of invention provides；
Fig. 2 is the structural schematic diagram for the field-effect tube that one embodiment of the present of invention provides；
Fig. 3 to Fig. 9 is the structural schematic diagram of the production method step for the field-effect tube that one embodiment of the present of invention provides；
In figure: 1, substrate；2, the first epitaxial layer；3, first groove；4, the first injection region；5, the second epitaxial layer；6, third
Epitaxial layer；7, second groove；8, fourth epitaxial layer；9, the 5th epitaxial layer；10, body area；11, grid；12, source electrode；13, it drains；
14, depletion region.
Specific embodiment
It below will the present invention will be described in more detail refering to attached drawing.In various figures, identical element uses similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to be not shown certain
Well known part.For brevity, the semiconductor structure obtained after several steps can be described in a width figure.
It should be appreciated that being known as being located at another floor, another area when by a floor, a region in the structure of outlines device
When domain " above " or " top ", can refer to above another layer, another region, or its with another layer, it is another
Also comprising other layers or region between a region.Also, if device overturn, this layer, a region will be located at it is another
Layer, another region " following " or " lower section ".
If will use that " A is directly on B herein to describe located immediately at another layer, another region above scenario
The expression method of face " or " A on B and therewith abut ".In this application, " A is in B " indicates that A is located in B, and
And A and B is abutted directly against, rather than A is located in the doped region formed in B.
In this application, term " semiconductor structure " refers to entire half formed in each step of manufacturing semiconductor devices
The general designation of conductor structure, including all layers formed or region.
Many specific details of the invention, such as structure, material, the size, processing side of device are described hereinafter
Method and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
A kind of field-effect tube provided in an embodiment of the present invention and preparation method thereof is carried out below in conjunction with Fig. 1 to Fig. 9 detailed
Explanation.
Referring next to attached drawing, a kind of production method of field-effect tube of the embodiment of the present invention is elaborated.
As depicted in figs. 1 and 2, the production method of the field-effect tube includes:
Step S01: the substrate 1 of the first conduction type is provided；The of 1 upper surface growth regulation of substrate, one conduction type
One epitaxial layer 2；
Step S02: inverted T shaped first groove 3 is formed in first epitaxial layer 2；
Step S03: the second conduction type connecting with 3 bottom of first groove is formed in first epitaxial layer 2
The first injection region 4, and the second conduction type connecting with first injection region 4 is formed in 3 bottom of first groove
Second epitaxial layer 5 is formed in outside the third for the second conduction type that second epitaxial layer 5 connects in the first groove 3
Prolong layer 6；
Step S04: the second groove 7 of drum is formed in first epitaxial layer 2；
Step S05: the fourth epitaxial layer 8 of the second conduction type is formed in 7 bottom of second groove, in second ditch
The 5th epitaxial layer 9 of the first conduction type connecting with 8 upper surface of fourth epitaxial layer is formed in slot 7；
Step S06: source electrode and gate structure are formed in 2 upper surface of the first epitaxial layer, by the source electrode and grid knot
The area Gou Ti 10 partly overlaps with the first groove 3 and connect, and the source electrode and gate structure are set to two described
Between one groove 3, the gate structure of the source electrode and gate structure is connect with 7 upper surface of second groove；In the lining
The lower surface at bottom 1 forms the drain electrode 13 connecting with the substrate 1.
The present invention improves on the basis of traditional field-effect tube proposes a kind of multilayered auxiliary structure high pressure field-effect
Pipe, mainly for the power device of N-type channel.The embodiment of the present invention by 10 bottom of body area increase T-type first groove 3 with
And first injection region 4, second epitaxial layer 5 and the third epitaxial layer 6 are formed in the first groove 3,
Do not increase by 2 thickness of the first epitaxial layer and increases the area of depletion region 14 in the case where changing 2 concentration of the first epitaxial layer, it will
The sectional view of depletion region 14 becomes the shape of approximate trapezoid from semicircular shape, to improve the breakdown voltage of device.This
Inventive embodiments also increase the second groove 7 of drum, the fourth epitaxial layer 8 in the second groove 7 in the area JFET
It ensure that depletion region 14 crosses in 7 bottom of second groove with the 5th epitaxial layer 9, increase the width of depletion region 14.
In addition, since the thickness of 14 depth of depletion region and first epitaxial layer 2 does not change, the embodiment of the present invention realizes
While improving the breakdown voltage of device the conducting resistance of device not will increase.
Specifically, first conduction type is one of p-type doping and n-type doping, and second conduction type is P
Type doping and the another kind in n-type doping.
Special to illustrate herein for convenience of description: first conduction type can be n-type doping, so that described second is conductive
Type is p-type doping；First conduction type can also adulterate for p-type, so that second conduction type is n-type doping.
In next embodiment, adulterated by p-type of first conduction type, second conduction type is that n-type doping is
Example is described, but is defined not to this.
Specifically, P type substrate and p-type extension belong to P-type semiconductor, and N-type substrate and N-type extension belong to N-type and partly lead
Body.The P-type semiconductor is the silicon wafer for adulterating triad, such as any group of boron element or phosphide element or aluminium element or three
It closes.The N-type semiconductor is any combination of the silicon wafer for adulterating pentad, such as P elements or arsenic element or both.
Attached drawing 3 is please referred to, step S01 is executed, specifically: the substrate 1 of the first conduction type is provided；On the substrate 1
First epitaxial layer 2 of one conduction type of surface growth regulation.In some embodiments of the invention, the substrate 1 is, for example, monocrystalline
Silicon substrate 1, and doping concentration is, for example, 1e15atoms/cm3.Wherein, it is grown in 1 upper surface of substrate of the first conduction type
The mode of first epitaxial layer 2 of the first conduction type is not limited to a kind of fixed mode, can use in 1 upper surface of substrate
It is epitaxially-formed, can also be formed outside described first by ion implanting and/or the method for diffusion in 1 upper surface of substrate
Prolong layer 2.First epitaxial layer 2 covers the upper surface of the substrate 1, and is equipped with certain thickness.It is possible to further
The 1 upper surface use of substrate is epitaxially-formed, and can also pass through ion implanting and/or diffusion P elements or arsenic element or two
The method of any combination of person forms first epitaxial layer 2 in 1 upper surface of substrate.Specifically, the extension or diffusion
Method include depositing operation.In some embodiments of the invention, depositing operation can be used in the 1 upper surface shape of substrate
At first epitaxial layer 2, for example, depositing operation can be selected from electron beam evaporation, chemical vapor deposition, atomic layer deposition,
One of sputtering.Preferably, the first epitaxial layer 2, chemical vapor deposition are formed using chemical vapor deposition on the substrate 1
Including process for vapor phase epitaxy.In production, chemical vapor deposition uses process for vapor phase epitaxy mostly, in 1 upper surface of substrate
The first epitaxial layer 2 is formed using process for vapor phase epitaxy, process for vapor phase epitaxy can be improved the perfection of silicon materials, improve device
Integrated level reaches raising minority carrier life time, reduces the leakage current of storage element.Due to autodoping effect, in epitaxial process,
Dopant from the substrate 1 can enter in the first epitaxial layer 2, to change the electric conductivity of epitaxial semiconductor layer.It needs
Illustrate, the thickness of first epitaxial layer 2 is, for example, 3~10 microns.The intrinsic doping concentration of first epitaxial layer 2
Range is, for example, 1e11~1e14atoms/cm.First epitaxial layer 2 and the substrate 1 are for adjusting the field-effect tube
Breakdown reverse voltage, be not involved in form PN junction.Preferably, by adjusting from the mixing to first epitaxial layer 2 of substrate 1
Miscellaneous concentration can control the breakdown voltage of the field-effect tube protection chip, such as in 2-48V or bigger range.
Attached drawing 4 is please referred to, step S02 is executed, specifically: inverted T shaped first groove is formed in first epitaxial layer 2
3.Firstly, then using photoetching will by preparing in the upper surface of first epitaxial layer 2 and covering one layer of photoresist layer
Photoresist layer forms mask.The mask includes the opening of whole upper surfaces of the exposure first groove 3.In the exposure mask
Opening passes through the first part in dry etching formation first groove 3.At this point, the section of the first part of the first groove 3
Pattern is rectangular or rectangular shape or rectangle or approximate rectangular shape, then proceed to continue in the exposure mask to inject solution into
Row wet etching, so that forming section shape is inverted T shaped or approximate inverted T shaped first groove 3, it is narrow in the first groove 3
Lower width.Finally, again by dissolving or being ashed removal photoresist layer in a solvent after forming the first groove 3, from
And ultimately form the first groove 3.It is formed by first groove 3 in this step, is used in the next steps for being convenient for
Filler is filled.
It please refers to attached drawing 5 and attached drawing 6, executes step S03, specifically: it is formed in first epitaxial layer 2 and described the
First injection region 4 of the second conduction type of one groove, 3 bottom connection, and formed and described the in 3 bottom of first groove
Second epitaxial layer 5 of the second conduction type of one injection region 4 connection, is formed in second extension in the first groove 3
The third epitaxial layer 6 of second conduction type of 5 connection of layer.In some embodiments of the invention, in first epitaxial layer 2
The method for forming first injection region 4 can be injection and/or spread boron element or phosphide element or aluminium element or times of three
Meaning combination, forms the uncertainty of shape due to injecting, the sectional view of first injection region 4 is semicircle or approximate
It is semicircle.It should be noted that the upper surface of first injection region 4 is connect with the bottom surface of the first groove 3, so that
First injection region 4 is connect with the first groove 3.Secondly as the first groove 3 is up-narrow and down-wide, therefore described
The bottom width of one groove 3 is greater than the top width of the first groove 3, and second epitaxial layer 5 of the second conduction type can
It, can be with without being limited thereto, using being epitaxially-formed, can also be formed by the method for filling in the first groove 3.
In the first groove 3, second can be formed by extension or the method for filling in the upper surface of second epitaxial layer 5 and led
The method of the third epitaxial layer 6 of electric type, formation can be with without being limited thereto, and those skilled in the art can select according to the actual situation
Specific method is selected, for example, it is also possible to first to pass through extension in the first groove 3 or filling second epitaxial layer 5
Method fills the full first groove 3, then passes through ion implanting and/or diffusion boron element or indium member in the first groove 3
The method of any combination of element or aluminium element or three forms the third epitaxial layer 6.In some embodiments of the invention, institute
State the bottom that the second epitaxial layer 5 is located at the first groove 3, the upper surface of the third epitaxial layer 6 and second epitaxial layer 5
Connection.Since first injection region 4 is connect with the bottom of the first groove 3, first injection region 4 and described the
The upper surface of two epitaxial layers 5 connects.In embodiment below, with the third epitaxial layer 6 in the second groove 7 shape
At being described for the structure that sectional view is inverted T shaped shape, but it is not limited to this.
Attached drawing 7 is please referred to, step S04 is executed, specifically: the second groove of drum is formed in first epitaxial layer 2
7.Firstly, then using photoetching will by preparing in the upper surface of first epitaxial layer 2 and covering one layer of photoresist layer
Photoresist layer forms mask.The mask includes the opening of whole upper surfaces of the exposure second groove 7.In the exposure mask
Opening is by being respectively formed the first sub-trenches and the second sub-trenches (not shown) in dry etching, first sub-trenches and described
Second sub-trenches are coaxial, and the width of first sub-trenches is greater than the width of second sub-trenches, second sub-trenches
It is greater than depth of first sub-trenches in first epitaxial layer 2 in the depth in first epitaxial layer 2.At this point, institute
It states the section pattern that the first sub-trenches and second sub-trenches are collectively formed to be positive T-type or approximate positive T-type, then proceed at this
Continue the bottom progress wet etching for injecting solution to second sub-trenches in exposure mask, after forming the second groove 7
Again by dissolving in a solvent or being ashed removal photoresist layer, so that ultimately forming whole section shape is drum or close
Like the second groove 7 of drum, at this point, the width among the wide i.e. described second groove 7 in the narrow centre in 7 both ends of the second groove is small
Width in 7 top and bottom of second groove.It is formed by second groove 7 in this step.In some realities of the invention
It applies in example, depth of the second groove 7 in first epitaxial layer 2 is greater than the depth of the first groove 3, but not only limits
In this, depth of the second groove 7 in first epitaxial layer 2 can also be equal or approximately equal to the first groove 3
Depth, but depth of the second groove 7 in first epitaxial layer 2 cannot be less than the first groove 3 depth, have
Area conducive to the depletion region 14 of formation is bigger.In addition, such as figure groove is formed by this step, for convenient for subsequent
It is filled in step using filler.
It should be noted that the embodiment of the present invention is described so that the shape of the second groove 7 is drum as an example, but not
Be limited to this, meet 7 bottom of second groove width be greater than 7 middle part of the second groove width condition groove
Using as the second groove 7 in the embodiment of the present invention, those skilled in the art can select different second according to the actual situation
The shape of groove 7, for example, the shape of the second groove 7 can also be inverted T shaped.
Attached drawing 8 is please referred to, step S05 is executed, specifically: the second conduction type is formed in 7 bottom of second groove
Fourth epitaxial layer 8 forms the first conduction type connecting with 8 upper surface of fourth epitaxial layer in the second groove 7
5th epitaxial layer 9.In some embodiments of the invention, since 7 both ends of second groove are narrow intermediate wide, the second conduction type
The fourth epitaxial layer 8 can be epitaxially-formed in the 7 bottom use of second groove, the method for filling can also be passed through
It is formed, it can be with without being limited thereto.In the second groove 7, formed and the fourth epitaxial layer 8 in the second groove 7
5th epitaxial layer 9 of the first conduction type of upper surface connection, the 5th epitaxial layer 9 fill up the second groove 7,
In, since the forming method of the 5th epitaxial layer 9 is identical as the forming method of the fourth epitaxial layer 8, details are not described herein.
In other embodiments of the invention, the forming method of the fourth epitaxial layer 8 and five epitaxial layer can be with are as follows: in institute
It states in second groove 7 and the fourth epitaxial layer 8 is formed by the method for extension or filling, and lead in the fourth epitaxial layer 8
The method of any combination crossed ion implanting and/or spread P elements or arsenic element or both shape in the fourth epitaxial layer 8
At the 5th epitaxial layer 9, the upper surface of the 5th epitaxial layer 9 and the upper surface of the second groove 7 maintain an equal level, and ultimately form
The fourth epitaxial layer 8 be formed in the bottom of the second groove 7, and the upper surface of the fourth epitaxial layer 8 and described the
The lower surface of five epitaxial layers 9 connects.It should be noted that the width of the fourth epitaxial layer 8 is greater than and the fourth epitaxial layer 8
The width of 5th epitaxial layer 9 of contact, and the fourth epitaxial layer 8 and the 5th epitaxial layer 9 are used to form PN junction, to increase
Add the area of depletion region 14.
Further, the doping concentration of first injection region 4 is higher than the doping concentration of second epitaxial layer 5, described
The doping concentration of second epitaxial layer 5 is higher than the doping concentration of the third epitaxial layer 6, the doping concentration of the 5th epitaxial layer 9
Higher than the doping concentration of first epitaxial layer 2.In some embodiments of the invention, mixing due to first injection region 4
Miscellaneous concentration is higher than the doping concentration of second epitaxial layer 5, and the doping concentration of second epitaxial layer 5 is higher than the third extension
The doping concentration of layer 6, doping concentration is successively decreased from bottom to top in the first groove 3 and first epitaxial layer 2, so as to
In the case where guaranteeing breakdown voltage, so that the conducting resistance of the field-effect tube is minimum.Additionally, it is preferred that, outside the described 4th
The doping concentration for prolonging layer 8 is substantially equal to the doping concentration of second epitaxial layer 5, and the doping concentration of the 5th epitaxial layer 9
Higher than the doping concentration of first epitaxial layer 2, the depletion region of drum deep trench that the second groove 7 is formed or so ensure that
14 depth enough and even width.
Attached drawing 9 is please referred to, step S06 is executed, specifically: forming source electrode and grid in 2 upper surface of the first epitaxial layer
The body area 10 of the source electrode and gate structure is partly overlapped with the first groove 3 and is connect by structure, and by the source electrode and grid
Pole structure setting is between two first grooves 3, by the gate structure of the source electrode and gate structure and second ditch
The connection of 7 upper surface of slot；The drain electrode 13 connecting with the substrate 1 is formed in the lower surface of the substrate 1.In some realities of the invention
It applies in example, the field-effect tube is VDMOS (i.e. vertical double diffused metal-oxide semiconductor field effect pipe).
In some embodiments of the invention, first medium layer, i.e. grid oxygen are formed in 2 upper surface of the first epitaxial layer
Layer, and the polysilicon layer of the first medium layer connection, the first medium are formed in the upper surface of the first medium layer
Layer and the polysilicon layer form the grid 11 of the field-effect tube.It is formed described in covering in 2 upper surface of the first epitaxial layer
The second dielectric layer of grid 11, and source electrode 12 is formed in the second dielectric layer upper surface, the source electrode 12 also extends through described the
Second medium floor is simultaneously connect with source region and body area 10, and the drain electrode connecting with the substrate 1 is finally formed in the lower surface of the substrate 1
13, to form 13 structures of the source configuration of the field-effect tube, gate structure and drain electrode.
Specifically, the polysilicon layer is formed by intrinsic polysilicon doping phosphonium ion or boron ion, this field skill
Art personnel can be different according to the structure choice of device doped polycrystalline silicon-type, the polysilicon in the polysilicon layer can be
P-type polysilicon is also possible to N-type polycrystalline silicon.During forming doped polysilicon layer, the neutrality in doped polysilicon layer is former
For preventing Doped ions from agglomerating, Doped ions are used to have suction-operated to silicon atom.Specifically, the extension, diffusion
And/or the method for injection includes depositing operation.In some embodiments of the invention, depositing operation can be steams selected from electron beam
One of hair, chemical vapor deposition, atomic layer deposition, sputtering.Preferably, (referred to as using low-pressure chemical vapor deposition
LPCVD, i.e. Low Pressure Chemical Vapor Deposition) form the polysilicon layer, formation it is described more
The purity is high of crystal silicon layer, uniformity are good.
Specifically, the first medium layer is the insulation gate oxide in the field-effect tube, the insulation gate oxide
Constitute the dielectric of the field-effect tube.The first medium layer and the material of the second dielectric layer are silica or nitridation
Silicon or silicon oxynitride specifically can form the first medium by using sputtering or thermal oxidation method or chemical vapor deposition process
Layer and the second dielectric layer.Preferably, the first medium layer and the second dielectric layer are the silica that thermal oxide is formed
Layer, in subsequent doping step, the silicon oxide layer is as protective layer, and by the interlayer insulating film as resulting devices.
In addition, the first medium layer and the second dielectric layer are equipped with certain thickness, so that the first medium layer and described the
Second medium layer plays the role of that electric current and insulation is isolated.More specifically, the second dielectric layer is for being isolated the field-effect tube
With subsequent conductive layer.
Specifically, by annealing process, can be formed in the upper surface of the second dielectric layer has certain thickness the
One metal layer, and the first metal layer covers the second dielectric layer.The first metal layer includes covering described second to be situated between
The first part of matter layer upper surface extends to the second part of the source region and the body area 10 through the second dielectric layer.
The first metal layer forms the source electrode 12 of the field-effect tube, is formed and is covered under the substrate 1 in the lower surface of the substrate 1
The second metal layer on surface, the second metal layer are the drain electrode 13 of the field-effect tube.In some embodiments of the invention,
The first metal layer is used to connect the source electrode 12 of the field-effect tube and grid 11 to come, so that metal lead wire will when encapsulation
The source electrode 12 and the grid 11 are drawn.In some embodiments of the invention, the first metal layer and second gold medal
Belonging to could be covered with passivation layer above layer, the passivation layer is used to protect the first metal layer and the second metal layer,
So that protecting the entire field-effect tube.
In some embodiments of the invention, the body area 10 of the field-effect tube and the source electrode and gate structure part weight
Folded, in the cross-sectional view of the structure of general field-effect tube, the 10 sectional view shape of body area of the field-effect tube is semicircle, described
Overlapping connection be specially the area Zhong Ti of the embodiment of the present invention 10 by first groove 3 second epitaxial layer 5 and the third outside
Prolong the covering of 6 part of layer, and the body area 10 is connect with second epitaxial layer 5 and the third epitaxial layer 6, so that institute
It states the second epitaxial layer 5 and the third epitaxial layer 6 is contacted with the body area 10.It should be noted that due to the body area 10
Sectional view shape is semicircle, and therefore, the area that the third epitaxial layer 6 is covered by the body area 10 is most, thus exposing
From the point of view of the section area of pictural surface in the body area 10, the area of second epitaxial layer 5 is greater than the area of the third epitaxial layer 6.
In addition, since the body area 10 and source region form a symmetrical structure, it is corresponding, for area 10 individual for one,
In order to reach as far as possible increase depletion region 14 area, need two first grooves 3 to be located at the two sides in the body area 10,
To increase the contact area with the body area 10 as far as possible, therefore, it is necessary to by the body area of the source electrode and gate structure
10 are set between two first grooves 3, it should be appreciated that at this point, being described the with the immediate epitaxial layer in the body area 10
Three epitaxial layers 6, followed by described second epitaxial layer 5, it should be noted that first injection region 4 does not connect with the body area 10
Touching.More specifically, the 5th epitaxial layer 9 is connect with the grid 11, what it is due to field-effect tube formation is N-channel, because
This, the 6th epitaxial layer of the first conduction type preferably reduces the conducting resistance of the field-effect tube.More optimizedly, described
The PN junction that the fourth epitaxial layer 8 and the 5th epitaxial layer 9 in two grooves 7 are formed, can increase the area of depletion region 14,
To increase the breakdown voltage of the field-effect tube.
Further, 6 upper surface of third epitaxial layer and 3 upper surface of first groove are maintained an equal level, and by described
Five epitaxial layers, 9 upper surface and 7 upper surface of second groove maintain an equal level, wherein the side of the third epitaxial layer 6 is without departing from described
The side in body area 10.In some embodiments of the invention, 6 upper surface of third epitaxial layer and table in the first groove 3
Face maintains an equal level, and the side of the third epitaxial layer 6 avoids the resistance for influencing the N-channel formed without departing from the side in the body area 10
Increase, to avoid increasing conducting resistance.5th epitaxial layer, 9 upper surface and 7 upper surface of second groove maintain an equal level, thus
The resistance for the N-channel to be formed can be made to reduce, so as to reduce conducting resistance.
Further, by the body area 10 of the source electrode and gate structure respectively with second epitaxial layer 5 and the third
Epitaxial layer 6 connects.In some embodiments of the invention, second epitaxial layer 5 and the third epitaxial layer 6 and the body area
10 connections, to connect with source electrode 12 with current potential, avoid second epitaxial layer 5 and the third epitaxial layer 6 from being not connected to electricity
Position, causes floating, in addition, the resistivity ratio of epitaxial layer is larger, may reduce potential difference, reduces depletion layer area, and described the
Two epitaxial layers 5 and the third epitaxial layer 6 are directly connected to the body area 10, so that potential difference becomes larger as far as possible.
Further, the quantity at least two of the first groove 3, by two first grooves 3 relative to described
The body area 10 of source electrode and gate structure is symmetrical arranged, and the second groove 7 is set to the one of two first grooves 3
Side.In some embodiments of the invention, the quantity at least two of the first groove 3, so that two described first
The structure that groove 3 and an individual area 10 are formed may be constructed the minimum primitive unit cell of the field-effect tube.In embodiments of the present invention
The field-effect tube in primitive unit cell be in a symmetrical structure and the symmetrical structure tool there are four 3 He of first groove
Two individual areas 10, two first grooves 3 are symmetrical arranged relative to the body area 10.In addition, in other realities of the invention
It applies in example, includes a second groove 7, the second groove 7 in the field-effect tube in embodiments of the present invention
In the field-effect tube middle part and two individual areas 10 be symmetrical arranged relative to the second groove 7, form the consumption of larger area
Area 14 to the greatest extent.
The embodiment of the present invention forms the symmetrically arranged first groove by 10 bottom of body area in the field-effect tube
3, and second epitaxial layer 5 and the third epitaxial layer 6 and in first epitaxial layer 2 are formed in the first groove 3
The PN junction formed between first injection region 4 of middle formation, can increase by 14 width of depletion region of the field-effect tube, and described first
Groove 3 and the second groove 7 have certain depth in first epitaxial layer 2, so that the depletion region of the field-effect tube
14 depth reduce, and the area of entire depletion region 14 is increased in general.At this time due to the depletion region of the field-effect tube
14 depth reduces, and thereby reduces the thickness of required epitaxial layer, reduces conducting resistance.It should be noted that drum
The second groove 7 is connect with the grid 11 of the field-effect tube, and the second groove 7 is formed in the field-effect tube
The area JFET is formed with the fourth epitaxial layer 8 and the 5th epitaxial layer 9 in the second groove 7, further increases and exhaust
14 width of area guarantees the breakdown characteristics of 14 domain crossover position of depletion region.
As shown in Fig. 2, the embodiment of the present invention provides a kind of field-effect tube, shown field-effect tube includes:
The substrate 1 of first conduction type；
First epitaxial layer 2 of the first conduction type is grown on 1 upper surface of substrate；
The first groove 3 of inverted T-shaped is formed in first epitaxial layer 2；
First injection region 4 of the second conduction type, be formed in first epitaxial layer 2 and with 3 bottom of first groove
Portion's connection；Second epitaxial layer 5 of the second conduction type is formed in 3 bottom of first groove and connects with first injection region 4
It connects；The third epitaxial layer 6 of second conduction type is formed in the first groove 3 and connect with second epitaxial layer 5；
The second groove 7 of drum is formed in first epitaxial layer 2；
The fourth epitaxial layer 8 of second conduction type is formed in 7 bottom of second groove and the first conduction type
5th epitaxial layer 9 is formed in the second groove 7 and connect with 8 upper surface of fourth epitaxial layer；
Source electrode and gate structure are formed in 2 upper surface of the first epitaxial layer, the body area 10 of the source electrode and gate structure
It partly overlaps and connect with the first groove 3, and the body area 10 of the source electrode and gate structure is set to two first ditches
Between slot 3, the gate structure of the source electrode and gate structure is connect with 7 upper surface of second groove；
Drain electrode 13, is formed in the lower surface of the substrate 1 and connect with the substrate 1.
Specifically, first conduction type is one of p-type doping and n-type doping, and second conduction type is P
Type doping and the another kind in n-type doping.
Special to illustrate herein for convenience of description: first conduction type can be n-type doping, so that described second is conductive
Type is p-type doping；First conduction type can also adulterate for p-type, so that second conduction type is n-type doping.
In next embodiment, adulterated by p-type of first conduction type, second conduction type is that n-type doping is
Example is described, but is defined not to this.
Specifically, P type substrate and p-type extension belong to P-type semiconductor, and N-type substrate and N-type extension belong to N-type and partly lead
Body.The P-type semiconductor is the silicon wafer for adulterating triad, such as any group of boron element or phosphide element or aluminium element or three
It closes.The N-type semiconductor is any combination of the silicon wafer for adulterating pentad, such as P elements or arsenic element or both.
In some embodiments of the invention, as shown in Fig. 2, the field-effect tube includes the substrate 1 of the first conduction type
With the first epitaxial layer 2 of the first conduction type, first epitaxial layer 2 is grown on 1 upper surface of substrate.Specifically, described
Substrate 1 is the carrier in integrated circuit, and the substrate 1 plays the role of support, and the substrate 1 also assists in the integrated circuit
Work.The substrate 1 can be silicon substrate, or Sapphire Substrate can also be silicon Chu substrate, it is preferred that the lining
Bottom 1 is silicon substrate, this is because silicon substrate material has the characteristics that low cost, large scale, conductive, avoids edge effect,
Yield can be increased substantially.Preferably, first epitaxial layer 2 and the substrate 1 are all that silicon materials are made, so that the lining
Bottom 1 and first epitaxial layer 2 have the silicon face of same crystal structure, to keep the control to dopant type and concentration.
Further, the doping concentration of the substrate 1 is higher than the doping concentration of first epitaxial layer 2.Of the invention
In some embodiments, during growing the first epitaxial layer 2 on the substrate 1, since first epitaxial layer 2 is in institute
It states and is formed on the basis of substrate 1, therefore the doping concentration of the substrate 1 is higher than the doping concentration of first epitaxial layer 2.At this time
The resistivity of first epitaxial layer 2 is higher than the resistivity of the substrate 1, so as to adjust the whole device of the field-effect tube
Part resistivity obtains more Surge handling capabilities.
In some embodiments of the invention, as shown in Fig. 2, the maximum width of the first groove 3 is greater than described second
The depth of the maximum width of groove 7, the second groove 7 is greater than or equal to or is substantially equal to the depth of the first groove 3, protects
The area for having demonstrate,proved the depletion region 14 that the field-effect tube is formed in the case where not increasing the thickness of first epitaxial layer 2 to the greatest extent may be used
It can increase.
In conclusion the field-effect tube overall structure is symmetrical and is the first primitive unit cell.
It should be noted that since the field-effect tube overall structure is symmetrical and is the first primitive unit cell, but first primitive unit cell
It is not the smallest primitive cell structure in the field-effect tube, in minimum primitive unit cell, the body area 10, the second groove 7 and institute
The quantity for stating fourth epitaxial layer 8 and the 5th epitaxial layer 9 in second groove 7 only has one, the source region, the first groove 3
And the quantity of second epitaxial layer 5, the third epitaxial layer 6 in the first groove 3 is two and is symmetrical junction
Structure.For convenience of description, the embodiment of the present invention specifically describes the structure of the field-effect tube, but not by taking first primitive unit cell as an example
Be only limitted to this, those skilled in the art can the primitive unit cell of the field-effect tube determines according to actual conditions specific structure.
The technical solution of the embodiment of the present invention is had been described in detail above with reference to the accompanying drawings, the embodiment of the present invention is in traditional field-effect
It is improved on the basis of pipe and proposes a kind of multilayered auxiliary structure high pressure field-effect tube, by the body area of the field-effect tube
10 two sides of the bottom increase outside second epitaxial layer 5 and the third in the first groove 3 and the first groove 3
Prolong layer 6, and it will consumption in the case where changing 2 concentration of the first epitaxial layer the case where not increasing by 2 thickness of the first epitaxial layer
The area in area 14 increases to the greatest extent, at this point, the 14 sectional view shape of depletion region of the field-effect tube becomes approximate trapezoid from semicircle, from
And to improve device electric breakdown strength.It should be understood that the first groove 3 contacted with 10 bottom of body area of the field-effect tube
Second epitaxial layer 5 and the third epitaxial layer 6 and first epitaxial layer unlike the concentration of interior formation being stacked
First injection region 4 in 2.The first groove 3 and the second groove 7 at this time reduces the depth of depletion region 14 simultaneously
And 14 width of depletion region is increased, as a complete unit, the improved field-effect tube still increases 14 area of depletion region.It is described
The area JFET of field-effect tube increases the second groove 7 of drum, 7 upper surface of second groove and the field-effect tube
Grid 11 contacts, and the 5th epitaxial layer 9 is filled in the second groove 7, and 7 bottom of the second groove is formed
Fourth epitaxial layer 8 is stated, ensure that the depletion region 14 of the field-effect tube at the bottom of the first groove 3 and the second groove 7
Portion crosses, and further increases 14 width of depletion region, additionally it is possible to guarantee 14 domain of depletion region that the first groove 3 is formed and
The breakdown characteristics for the 14 domain crossover position of depletion region that the second groove 7 is formed.Dashed region as shown in Figure 2 is the field
The depletion region 14 of effect pipe.In addition, since 14 depth of depletion region of the field-effect tube and the thickness of first epitaxial layer 2 do not have
There is change, the conducting resistance of the field-effect tube entirety not will increase.New structure in the embodiment of the present invention both increases device
The breakdown voltage of part, while reducing the conducting resistance of device.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (10)
1. a kind of field-effect tube characterized by comprising
The substrate of first conduction type；
First epitaxial layer of the first conduction type, is grown on the upper surface of substrate；
The first groove of inverted T-shaped is formed in first epitaxial layer；
First injection region of the second conduction type is formed in first epitaxial layer and connect with the first groove bottom；
Second epitaxial layer of the second conduction type is formed in the first groove bottom and connect with first injection region；Second leads
The third epitaxial layer of electric type is formed in the first groove and connect with second epitaxial layer；
The second groove of drum is formed in first epitaxial layer；
The fourth epitaxial layer of second conduction type is formed in outside the 5th of the second groove bottom and the first conduction type
Prolong layer, be formed in the second groove and connect with the fourth epitaxial layer upper surface；
Source electrode and gate structure, are formed in first epitaxial layer upper surface, the body area of the source electrode and gate structure with it is described
First groove partly overlaps connection, and the body area of the source electrode and gate structure is set between two first grooves, institute
The gate structure for stating source electrode and gate structure is connect with the second groove upper surface；
Drain electrode, is formed in the lower surface of the substrate and connect with the substrate.
2. field-effect tube according to claim 1, which is characterized in that the doping concentration of first injection region is higher than described
The doping concentration of second epitaxial layer, the doping concentration of second epitaxial layer are higher than the doping concentration of the third epitaxial layer, institute
The doping concentration for stating the 5th epitaxial layer is higher than the doping concentration of first epitaxial layer.
3. field-effect tube according to claim 1, which is characterized in that third epitaxial layer upper surface and first ditch
Slot upper surface maintains an equal level, and the 5th epitaxial layer upper surface and the second groove upper surface maintain an equal level, wherein the third epitaxial layer
Side without departing from the body area side.
4. field-effect tube according to claim 3, which is characterized in that the body area of the source electrode and gate structure respectively with institute
The second epitaxial layer is stated to connect with the third epitaxial layer.
5. field-effect tube according to claim 1, which is characterized in that the quantity at least two of the first groove, two
A first groove is symmetrical arranged relative to the body area of the source electrode and gate structure, and the second groove is set to two
The side of the first groove.
6. a kind of production method of field-effect tube comprising:
The substrate of first conduction type is provided；
First epitaxial layer of one conduction type of surface growth regulation over the substrate；
Inverted T shaped first groove is formed in first epitaxial layer；
The first injection region of the second conduction type connecting with the first groove bottom is formed in first epitaxial layer, and
The second epitaxial layer of the second conduction type connecting with first injection region is formed in the first groove bottom, described the
The third epitaxial layer of the second conduction type of the second epitaxial layer connection is formed in one groove；
The second groove of drum is formed in first epitaxial layer；
The second groove bottom formed the second conduction type fourth epitaxial layer, in the second groove formed with it is described
5th epitaxial layer of the first conduction type of fourth epitaxial layer upper surface connection；
Form source electrode and gate structure in first epitaxial layer upper surface, by the body area of the source electrode and gate structure with it is described
First groove partly overlaps connection, and the source electrode and gate structure are set between two first grooves, will be described
The gate structure of source electrode and gate structure is connect with the second groove upper surface；
The drain electrode connecting with the substrate is formed in the lower surface of the substrate.
7. a kind of production method of field-effect tube according to claim 6, which is characterized in that mix first injection region
Miscellaneous concentration is higher than the doping concentration of second epitaxial layer, and the doping concentration of second epitaxial layer is higher than the third epitaxial layer
Doping concentration, the doping concentration of the 5th epitaxial layer is higher than the doping concentration of first epitaxial layer.
8. a kind of production method of field-effect tube according to claim 6, which is characterized in that will be on the third epitaxial layer
Surface and the first groove upper surface maintain an equal level, and the 5th epitaxial layer upper surface is held with the second groove upper surface
It is flat, wherein side of the side of the third epitaxial layer without departing from the body area.
9. a kind of production method of field-effect tube according to claim 8, which is characterized in that by the source electrode and grid knot
The area Gou Ti is connect with second epitaxial layer and the third epitaxial layer respectively.
10. a kind of production method of field-effect tube according to claim 6, which is characterized in that the number of the first groove
Amount at least two, the body area by two first grooves relative to the source electrode and gate structure is symmetrical arranged, and by institute
State the side that second groove is set to two first grooves.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4743952A (en) * | 1983-04-04 | 1988-05-10 | General Electric Company | Insulated-gate semiconductor device with low on-resistance |
| JPH03133180A (en) * | 1989-10-19 | 1991-06-06 | Matsushita Electron Corp | Semiconductor device |
| EP0600229A1 (en) * | 1992-10-30 | 1994-06-08 | Nippondenso Co., Ltd. | Power semiconductor device with protective means |
| CN101211983A (en) * | 2006-12-27 | 2008-07-02 | 东部高科股份有限公司 | Semiconductor device and method for fabricating the same |
| JP2013140935A (en) * | 2012-01-05 | 2013-07-18 | Vanguard Internatl Semiconductor Corp | Semiconductor device and method of manufacturing the same |
-
2018
- 2018-09-14 CN CN201811071360.5A patent/CN109119482A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4743952A (en) * | 1983-04-04 | 1988-05-10 | General Electric Company | Insulated-gate semiconductor device with low on-resistance |
| JPH03133180A (en) * | 1989-10-19 | 1991-06-06 | Matsushita Electron Corp | Semiconductor device |
| EP0600229A1 (en) * | 1992-10-30 | 1994-06-08 | Nippondenso Co., Ltd. | Power semiconductor device with protective means |
| CN101211983A (en) * | 2006-12-27 | 2008-07-02 | 东部高科股份有限公司 | Semiconductor device and method for fabricating the same |
| JP2013140935A (en) * | 2012-01-05 | 2013-07-18 | Vanguard Internatl Semiconductor Corp | Semiconductor device and method of manufacturing the same |
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Application publication date: 20190101 |