CN109119362A - A kind of heating device and heating means for high temperature tension - Google Patents
A kind of heating device and heating means for high temperature tension Download PDFInfo
- Publication number
- CN109119362A CN109119362A CN201810809595.3A CN201810809595A CN109119362A CN 109119362 A CN109119362 A CN 109119362A CN 201810809595 A CN201810809595 A CN 201810809595A CN 109119362 A CN109119362 A CN 109119362A
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- Prior art keywords
- heating
- high temperature
- pedestal
- temperature tension
- heating unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of heating devices for high temperature tension, comprising: pedestal is formed with heating cavities, and the side of heating cavities has window；At least two wafer-supporting platforms are divided on the pedestal periphery above heating cavities, for silicon wafer to be carried and fixed from edge；Upper heating unit and lower heating unit, for heating respectively from the front and back of silicon wafer to silicon wafer, lower heating unit is set in heating cavities.The present invention is using point brace type wafer-supporting platform structural bearing and fixed silicon wafer, and by the way of two-sided while heating, solves warpage issues of the conductor substrate in high temperature tension technique, improve the uniformity of high temperature tension technique, apparatus structure is simple, and cost is relatively low.The invention also discloses a kind of heating means for high temperature tension.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology fields, infuse more particularly, to one kind for High temperature ion
The heating device and heating means entered.
Background technique
With the continuous development of semiconductor technology node, after entering 16 nm technology generations, start using a kind of novel
Ion implantation technique, i.e. high temperature tension.The appearance of high temperature tension is primarily to solve semiconductor processing dimensions
After miniature, the problem of end-of-range defects (EOR) tolerance introduced for ion implanting is lower, certain technology is needed
Means are come these defects of preventing.High temperature tension board can be such that semiconductor substrate is heated to before semiconductor substrate injection
150~400 DEG C, the self annealing effect of semiconductor substrate inside itself, can effectively inhibit semiconductor when cooperating ion implanting
Substrate is decrystallized in specific injection, eliminates end-of-range defects.
Currently, there are mainly two types of different heating methods for high temperature tension equipment.One of high temperature tension is set
Standby is please a kind of existing structural schematic diagram of high temperature tension equipment with specific reference to Fig. 1, Fig. 1.Shown in fig. 1 is using heat
The structure of the ion implantation device of radiant heating form.The high temperature tension equipment includes process cavity 1 and preheater 2.Its
In, preheater 2 is for before ion implantation, heating semiconductor substrate 4.Preheating platform is provided in preheater 2
5, be located at preheating platform 5 above be equipped with several resistance wires 6, for preheating platform 5 on semiconductor substrate 4 in a manner of heat radiation
It is heated.After heating in preheater 2, the wafer-supporting platform that the semiconductor substrate 4 after heating is transferred in process cavity 1
On 3, ion implantation technology is carried out.
The heating method of another high temperature tension equipment is then by heat transfer heat form.This ion implanting is set
It is standby to be not provided with preheater, but semiconductor substrate is carried out on the wafer-supporting platform with high temperature being directly equipped in the process chamber
Heating.
However, above-mentioned existing two kinds of ion implanting heating methods, heating method are all limited to thermal diffusion and surface temperature
Degree can be such that heating is unevenly distributed, cause semiconductor substrate warpage.Such case can theoretically make partly leading for end-of-range defects
Control is uneven in body substrate.
Therefore, it is necessary to be improved to existing equipment heating method, to improve semiconductor substrate in high temperature tension
Warpage issues in technique improve the uniformity of high temperature tension technique.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, provide a kind of for high temperature tension
Heating device and heating means.
To achieve the above object, technical scheme is as follows:
The present invention provides a kind of heating devices for high temperature tension, comprising:
Pedestal, is formed with heating cavities, and the side of the heating cavities has window；
At least two wafer-supporting platforms are divided on the pedestal periphery above heating cavities, for carrying from edge and admittedly
Determine silicon wafer；
Upper heating unit and lower heating unit, for being heated respectively from the front and back of silicon wafer to silicon wafer；Wherein,
The lower heating unit is set in heating cavities.
Further, the pedestal is fork-shaped pedestal, there are at least two symmetrically arranged pieces that hold to pitch, the wafer-supporting platform
Set on holding on piece fork, the space surrounded between piece fork of holding forms the heating cavities that side has window.
Further, the wafer-supporting platform is equipped with buckle, is used for from side clamping silicon wafer.
Further, the buckle is the siliceous buckle of point contact type.
Further, the upper heating unit and lower heating unit are respectively one group of infrared quartz halogen lamp.
Further, it corresponds between infrared quartz halogen lamp described in two groups and uniformly arranges up and down.
Further, the pedestal is equipped with vertical duction mechanism and/or hygrosensor.
The present invention also provides a kind of heating means for high temperature tension, using it is any it is above-mentioned for high temperature from
The heating device of son injection, comprising the following steps:
Pedestal is horizontally arranged；
Chip transmission is placed on the wafer-supporting platform of pedestal and is fixed；
Upright position needed for pedestal is rotated to injection technology；
Heating unit and lower heating unit in unlatching simultaneously heat silicon wafer from the front and back of silicon wafer；
Start high temperature tension technique；
Upper heating unit and lower heating unit are closed after injection；
Pedestal is reverted to horizontal positioned.
Further, when being heated to silicon wafer, after temperature needed for making silicon temperature be raised to injection technology, just start high
Warm ion implantation technology.
Further, injection finishes, and after delay waits, just closes upper heating unit and lower heating unit.
It can be seen from the above technical proposal that the present invention is by using brace type wafer-supporting platform structural bearing and fixed silicon
Piece, and heating unit is installed by the front and back in silicon wafer respectively, by the way of two-sided while heating, this heating side
Temperature needed for formula can make silicon temperature moment be raised to injection technology, saves heating time；Meanwhile this heating method is also
Silicon chip surface temperature can be made uniform, Stress Control is good, avoids due to the even caused silicon warp problem of uneven heating.This
Invention solves warpage issues of the conductor substrate in high temperature tension technique, improves the uniform of high temperature tension technique
Property, and apparatus structure is simple, and cost is relatively low.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of existing high temperature tension equipment.
Fig. 2 is a kind of schematic diagram of heating device for high temperature tension of a preferred embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
It should be noted that in following specific embodiments, when describing embodiments of the invention in detail, in order to clear
Ground indicates structure of the invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should be avoided in this, as limitation of the invention to understand.
In specific embodiment of the invention below, referring to Fig. 2, Fig. 2 is one kind of a preferred embodiment of the present invention
Schematic diagram of heating device for high temperature tension.As shown in Fig. 2, of the invention a kind of for high temperature tension
Heating device, comprising: pedestal 21, the wafer-supporting platform 22 and upper heating unit 24 and lower heating unit 26 being mounted on pedestal 21
Several major parts.
Please refer to Fig. 2.Pedestal 21 can be processed into circular profile.It is empty that space inside pedestal 21 forms a heating
Chamber 27；The side of heating cavities 27 has open window, and the heat that can be used for inside and outside cavity 27 exchanges and convenient for observation.
As an optional embodiment, pedestal 21 can be a kind of fork-shaped pedestal 21；Fork-shaped pedestal 21 has at least two
Piece fork 28 is held, two are held piece and pitch the setting of 28 Symmetrical verticals.Two hold piece fork 28 between do not block, two such hold piece fork 28 it
Between the space that is surrounded, be formed the heating cavities 27 that side has window.
The top of pedestal 21 is equipped at least two wafer-supporting platforms 22；Two 22 levels of wafer-supporting platform are divided into 27 top of heating cavities
21 periphery of pedestal on, the upper surface of wafer-supporting platform 22 is as loading end, for carrying from edge and fixed silicon wafer 25.Example
Such as, a wafer-supporting platform 22 can be correspondingly arranged on the top that one is held piece fork 28.
As an optional specific embodiment, 23 can be buckled by the way that one is arranged on the loading end of wafer-supporting platform 22, with
Just from the side clamping silicon wafer 25 of 25 edge of silicon wafer, so that silicon wafer 25 is fixed on wafer-supporting platform 22.
The loading end of wafer-supporting platform 22 can be polygon, such as square；The side length of square for example can in 8~12mm, with
Just local support is formed to silicon wafer 25, is conducive to the thermally equivalent of silicon wafer 25.
Buckle 23 may be provided at the outer ledge position of 22 loading end of wafer-supporting platform；Also, single-point can be used in each buckle 23
Clamp form, that is, buckling 23 can be used the buckle structure of point contact type, so that while effective clamping silicon wafer 25, maximization subtracts
Contact surface area between small buckle 23 and 25 edge of silicon wafer, uniformity when enhancing silicon wafer 25 is heated.
The siliceous buckle 23 made by the high-purity silicon materials identical or close with 25 material of silicon wafer also can be used in buckle 23, with
Further eliminate possible inhomogeneities when silicon wafer 25 is heated.
Please refer to Fig. 2.The top of pedestal 21 is arranged in upper heating unit 24.Lower heating unit 26 is set to inside pedestal 21,
It is fixedly mounted in the heating cavities 27 of pedestal 21；Also, lower heating unit 26 is located at the lower section of 22 loading end of wafer-supporting platform, with
Silicon wafer 25 can be heated from the front and back of the silicon wafer 25 of clamping on 22 loading end of wafer-supporting platform respectively.
As an optional embodiment, (IR) one group infrared can be respectively adopted in upper heating unit 24 and lower heating unit 26
Quartz halogen lamp 24 and 26.Between two groups of infrared quartz halogen lamp 24 and 26 up and down correspond, and silicon wafer 25 front and
It uniformly arranges at the back side.
500nm~700nm can be used in the wavelength of infrared (IR) quartz halogen lamp.
As an optional embodiment, can be also equipped on pedestal 21 vertical duction mechanism (figure omits), for pedestal 21
Carry out the rotation control in vertical direction.For example, can be in the direction X-Y of vertical plane, by vertical duction mechanism to pedestal 21
(vertical) carries out rotation adjusting from 0 ° (level) to 90 °.
Upper heating unit 24 should form relatively fixed setting with pedestal 21, to form synchronization when pedestal 21 rotates.
In addition, hygrosensor (figure omits) can be also equipped on pedestal 21, for detecting the temperature of silicon wafer 25, accurately to control
Make the heating to silicon wafer 25.
Below by specific embodiment and attached drawing, to a kind of heating means for high temperature tension of the invention into
Row is described in detail.
Please refer to Fig. 2.A kind of heating means for high temperature tension of the invention, above-mentioned one kind can be used to be used for
The heating device of high temperature tension.Heating means for high temperature tension of the invention, it may include following steps:
Step S01: firstly, pedestal 21 is horizontally arranged (0 °), it is first before so that pedestal 21 is in high temperature tension technique
Beginning state, to receive the silicon wafer to be processed 25 of input.
Step S02: then, using manipulator, needing the silicon wafer for carrying out injection technology 25 to be transferred into process cavity, and
It is placed on the wafer-supporting platform 22 of pedestal 21；Meanwhile silicon wafer 25 is blocked using buckle 23 and is fixed, prevent silicon wafer 25 from falling.
Step S03: then, using vertical duction mechanism, rotating to upright position (90 °) for pedestal 21, i.e. injection work
Process station needed for skill.
Step S04: at this point, infrared (IR) quartz halogen lamp 24 and 26 of upper heating unit and lower heating unit is opened, from
The front and back of silicon wafer 25 simultaneously heats silicon wafer 25.
The infrared light that wavelength is 500nm~700nm can be used to be heated.
Meanwhile it being detected using temperature of the hygrosensor to silicon wafer 25, and 25 temperature of silicon wafer is made to be raised to injection work
After temperature needed for skill, just start high temperature tension technique.
Step S05: keeping infrared (IR) quartz halogen lamp 24 and 26 to open, and starts simultaneously at and executes high temperature tension work
Skill.
Step S06: after injection, after delay waits, such as after waiting until that injection technology terminates 1~3 second, just in closing
Infrared (IR) quartz halogen lamp 24 and 26 of heating unit and lower heating unit.
Step S07: and then it is secondary using vertical duction mechanism, pedestal 21 is rotated to horizontal positioned and buckle 23 is loose
It opens, facilitates the outflow of silicon wafer 25.
Step S08: finally, silicon wafer 25 is spread out of using manipulator again, so that pedestal 21 is again at original state and await orders.
In conclusion the present invention is by using brace type wafer-supporting platform structural bearing and fixes silicon wafer, and by silicon wafer
Front and back heating unit is installed respectively, using it is two-sided and meanwhile heat by the way of, this heating method can make silicon wafer temperature
Spend moment be raised to injection technology needed for temperature, save heating time；Meanwhile this heating method can also make silicon chip surface
Temperature is uniform, and Stress Control is good, avoids due to the even caused silicon warp problem of uneven heating.The present invention solves conductor
Warpage issues of the substrate in high temperature tension technique improve the uniformity of high temperature tension technique, and device knot
Structure is simple, and cost is relatively low.
Above-described to be merely a preferred embodiment of the present invention, the patent that the embodiment is not intended to limit the invention is protected
Range is protected, therefore all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of heating device for high temperature tension characterized by comprising
Pedestal, is formed with heating cavities, and the side of the heating cavities has window；
At least two wafer-supporting platforms are divided on the pedestal periphery above heating cavities, for silicon to be carried and fixed from edge
Piece；
Upper heating unit and lower heating unit, for being heated respectively from the front and back of silicon wafer to silicon wafer；Wherein, described
Lower heating unit is set in heating cavities.
2. the heating device according to claim 1 for high temperature tension, which is characterized in that the pedestal is fork-shaped
There are pedestal at least two symmetrically arranged pieces that hold to pitch, and the wafer-supporting platform, which is set to, to be held on piece fork, and described hold surrounds between piece fork
Space formed side have window heating cavities.
3. the heating device according to claim 1 for high temperature tension, which is characterized in that set on the wafer-supporting platform
There is buckle, is used for from side clamping silicon wafer.
4. the heating device according to claim 3 for high temperature tension, which is characterized in that the buckle connects for point
The siliceous buckle of touch.
5. the heating device according to claim 1 for high temperature tension, which is characterized in that the upper heating unit
It is respectively one group of infrared quartz halogen lamp with lower heating unit.
6. the heating device according to claim 5 for high temperature tension, which is characterized in that infrared stone described in two groups
It corresponds between English halogen lamp and uniformly arranges up and down.
7. the heating device according to claim 1 for high temperature tension, which is characterized in that the pedestal, which is equipped with, to hang down
Straight steering mechanism and/or hygrosensor.
8. a kind of heating means for high temperature tension are infused using as claimed in claim 1 to 7 described for High temperature ion
The heating device entered, which comprises the following steps:
Pedestal is horizontally arranged；
Chip transmission is placed on the wafer-supporting platform of pedestal and is fixed；
Upright position needed for pedestal is rotated to injection technology；
Heating unit and lower heating unit in unlatching simultaneously heat silicon wafer from the front and back of silicon wafer；
Start high temperature tension technique；
Upper heating unit and lower heating unit are closed after injection；
Pedestal is reverted to horizontal positioned.
9. the heating means according to claim 8 for high temperature tension, which is characterized in that heated to silicon wafer
When, after temperature needed for making silicon temperature be raised to injection technology, just start high temperature tension technique.
10. the heating means according to claim 8 for high temperature tension, which is characterized in that injection finishes, through prolonging
When wait after, just close and go up heating unit and lower heating unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810809595.3A CN109119362A (en) | 2018-07-23 | 2018-07-23 | A kind of heating device and heating means for high temperature tension |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810809595.3A CN109119362A (en) | 2018-07-23 | 2018-07-23 | A kind of heating device and heating means for high temperature tension |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109119362A true CN109119362A (en) | 2019-01-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810809595.3A Withdrawn CN109119362A (en) | 2018-07-23 | 2018-07-23 | A kind of heating device and heating means for high temperature tension |
Country Status (1)
| Country | Link |
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| CN (1) | CN109119362A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0414817A (en) * | 1990-05-09 | 1992-01-20 | Kawasaki Steel Corp | Ion implantation apparatus |
| US6013566A (en) * | 1996-10-29 | 2000-01-11 | Micron Technology Inc. | Method of forming a doped region in a semiconductor substrate |
| KR20020086345A (en) * | 2002-09-11 | 2002-11-18 | 이흥탁 | Grasp apparatus of a semiconductor wafer |
| WO2005124840A1 (en) * | 2004-06-17 | 2005-12-29 | Tokyo Electron Limited | Heat treatment device |
| CN105428400A (en) * | 2014-09-12 | 2016-03-23 | 株式会社思可林集团 | Semiconductor Manufacturing Method And Semiconductor Manufacturing Apparatus |
| CN105556655A (en) * | 2013-09-26 | 2016-05-04 | 应用材料公司 | Carbon fiber ring susceptor |
| CN106847738A (en) * | 2017-01-19 | 2017-06-13 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer clamping device |
-
2018
- 2018-07-23 CN CN201810809595.3A patent/CN109119362A/en not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0414817A (en) * | 1990-05-09 | 1992-01-20 | Kawasaki Steel Corp | Ion implantation apparatus |
| US6013566A (en) * | 1996-10-29 | 2000-01-11 | Micron Technology Inc. | Method of forming a doped region in a semiconductor substrate |
| KR20020086345A (en) * | 2002-09-11 | 2002-11-18 | 이흥탁 | Grasp apparatus of a semiconductor wafer |
| WO2005124840A1 (en) * | 2004-06-17 | 2005-12-29 | Tokyo Electron Limited | Heat treatment device |
| CN105556655A (en) * | 2013-09-26 | 2016-05-04 | 应用材料公司 | Carbon fiber ring susceptor |
| CN105428400A (en) * | 2014-09-12 | 2016-03-23 | 株式会社思可林集团 | Semiconductor Manufacturing Method And Semiconductor Manufacturing Apparatus |
| CN106847738A (en) * | 2017-01-19 | 2017-06-13 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer clamping device |
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Application publication date: 20190101 |