CN109117301A - A kind of method that subregion is arranged using error correction code check configurable functionality for random memory - Google Patents

A kind of method that subregion is arranged using error correction code check configurable functionality for random memory Download PDF

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Publication number
CN109117301A
CN109117301A CN201810806774.1A CN201810806774A CN109117301A CN 109117301 A CN109117301 A CN 109117301A CN 201810806774 A CN201810806774 A CN 201810806774A CN 109117301 A CN109117301 A CN 109117301A
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CN
China
Prior art keywords
memory
memory storage
unit
subregion
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810806774.1A
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Chinese (zh)
Inventor
陈育鸣
李庭育
洪振洲
魏智汎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Hua Cun Electronic Technology Co Ltd
Original Assignee
Jiangsu Hua Cun Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Hua Cun Electronic Technology Co Ltd filed Critical Jiangsu Hua Cun Electronic Technology Co Ltd
Priority to CN201810806774.1A priority Critical patent/CN109117301A/en
Priority to PCT/CN2018/105893 priority patent/WO2020015134A1/en
Publication of CN109117301A publication Critical patent/CN109117301A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management

Abstract

The invention discloses a kind of random memories to use the method for error correction code check configurable functionality setting subregion, including main control chip, memory storage control module and Memory control physical layer are equipped in main control chip, writing unit and reading unit are equipped in memory storage control module, writing unit and reading unit are separately connected Memory control physical layer, Memory control physical layer connects multiple memory storage elements, the present invention uses a kind of zone configuration scheme, allow each subregion that can distinguish enable or using different check mode or data and check bit ratio, when allowing a small amount of random data and a large amount of blocky data to be written with respective subregion is read, all using individual different settings and process, reach whole best efficiency and space utilization rate.

Description

A kind of method that subregion is arranged using error correction code check configurable functionality for random memory
Technical field
The present invention relates to memory techniques field, specially a kind of random memory is arranged using error correction code check configurable functionality The method of subregion.
Background technique
Memory is one of the ost important components in computer, it is the bridge linked up with CPU.All programs in computer Operation all carry out in memory, therefore influence of the performance of memory to computer is very big.Memory is also referred to as memory Reservoir, effect is for temporarily storing the operational data in CPU, and the data exchanged with external memories such as hard disks.Only Want computer in operation, CPU will be transferred to the data for needing operation in memory and carry out operation, and CPU is again after the completion of operation Result is sent out, the operation of memory also determines the stable operation of computer.Memory is by memory chip, circuit board, gold The part such as finger composition.
Existing memory control system does verification data protection to random memory, this verification protected mode is not configured subregion and sets It sets, for a small amount of random data and a large amount of blocky data, or the user data of different attribute, all using same protection Configuration, this limitation cause between a small amount of random data and a large amount of blocky data, or between the user data of different attribute, The optimization of most effective transmission and minimum check bit use space can not be reached simultaneously.
Summary of the invention
The purpose of the present invention is to provide a kind of random memories to use the side of error correction code check configurable functionality setting subregion Method, to solve the problems mentioned in the above background technology.
To achieve the above object, the invention provides the following technical scheme: a kind of random memory can be matched using error correction code check The method for setting function setting subregion, including main control chip, the main control chip is interior to be equipped with memory storage control module and memory control Physical layer processed, the memory storage control module is interior to be equipped with writing unit and reading unit, said write unit and reading unit It is separately connected Memory control physical layer, the Memory control physical layer connects multiple memory storage elements;Multiple memory storage groups Part includes the first memory storage elements, the second memory storage elements, third memory storage elements, N memory storage elements, and N is Integer greater than 3.
It preferably, further include that check bit generates unit and verification inspection unit, the check bit generates unit and verification inspection Verification certificate member is arranged in memory storage control module, and the check bit generates unit and connects writing unit;The verification checks Unit connects reading unit.
Preferably, a kind of random memory includes following step using the method for error correction code check configurable functionality setting subregion It is rapid:
A, different configurations are done to heterogeneity user's data first, is generated using different enable settings or operation process different Verification check bit,;
B, check bit and data are deposited into random external memory headroom simultaneously in a manner of additional or be configured to another block;
C, when reading, user data and check bit data are read simultaneously, verifies operation in carrying out user data in correction verification module.
Compared with prior art, it the beneficial effects of the present invention are: the present invention uses a kind of zone configuration scheme, allows each Subregion can distinguish enable or using different check mode or data and check bit ratio, allow a small amount of random data and big gauge block When the write-in of shape data is with respective subregion is read, all using individual different settings and process, reach whole best effective It can be with space utilization rate.
Detailed description of the invention
Fig. 1 is the random memory control unit schematic diagram inside a master control of the invention;
Fig. 2 is the random memory control unit inside master control of the present invention, configures additional check bit storage and is illustrated with memory subassembly Figure;
Fig. 3 is that the present invention does not configure additional check bit storage memory subassembly schematic diagram;
Fig. 4 is to do subregion for different attribute user data in random memory control unit of the present invention schematic diagram is arranged;
Fig. 5 is to do subregion for different attribute user data in random memory control unit of the present invention another schematic diagram is arranged.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
Please refer to Fig. 1-5, the present invention provides a kind of technical solution: a kind of random memory can configure function using error correction code check The method of subregion, including main control chip 1 can be set, are equipped with memory storage control module 2 and Memory control in the main control chip 1 Physical layer 3, the memory storage control module 2 is interior to be equipped with writing unit 4 and reading unit 5, and said write unit 4 and reading are single Member 5 is separately connected Memory control physical layer 3, and the Memory control physical layer 3 connects multiple memory storage elements;Multiple interior storages Depositing component includes the first memory storage elements 6, the second memory storage elements 7, third memory storage elements 8, N memory storage group Part, N are the integer greater than 3;It further include that check bit generates unit 9 and verification inspection unit 10, the check bit generates 9 He of unit Verification inspection unit 10 is arranged in memory storage control module 2, and the check bit generates unit 9 and connects writing unit 4;Institute It states verification inspection unit 10 and connects reading unit 5.
In the present invention, a kind of method that subregion is arranged using error correction code check configurable functionality for random memory, including it is following Step:
A, different configurations are done to heterogeneity user's data first, is generated using different enable settings or operation process different Verification check bit,;
B, check bit and data are deposited into random external memory headroom simultaneously in a manner of additional or be configured to another block;
C, when reading, user data and check bit data are read simultaneously, verifies operation in carrying out user data in correction verification module.
In conclusion the present invention uses a kind of zone configuration scheme, allow each subregion that can distinguish enable or using different Verification mode or data and check bit ratio allow a small amount of random data and a large amount of blocky data to be written and read respective subregion When, all using individual different settings and process, reach whole best efficiency and space utilization rate.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding And modification, the scope of the present invention is defined by the appended.

Claims (3)

1. a kind of random memory uses the method for error correction code check configurable functionality setting subregion, including main control chip 1, feature It is: is equipped with memory storage control module (2) and Memory control physical layer (3), the memory storage in the main control chip (1) Writing unit (4) and reading unit (5) are equipped in control module (2), said write unit (4) and reading unit (5) connect respectively It connects Memory control physical layer (3), the Memory control physical layer (3) connects multiple memory storage elements;Multiple memory storage groups Part includes the first memory storage elements (6), the second memory storage elements (7), third memory storage elements (8), N memory storage Component, N are the integer greater than 3.
2. the method that subregion is arranged using error correction code check configurable functionality for a kind of random memory according to claim 1, Generate unit (9) and verification inspection unit (10) it is characterized by also including check bit, check bit generation unit (9) and Verification inspection unit (10) is arranged in memory storage control module (2), and it is single that the check bit generates unit (9) connection write-in First (4);The verification inspection unit (10) connects reading unit (5).
3. the method that subregion is arranged using error correction code check configurable functionality for a kind of random memory according to claim 1, It is characterized by comprising following steps:
A, different configurations are done to heterogeneity user's data first, is generated using different enable settings or operation process different Verification check bit,;
B, check bit and data are deposited into random external memory headroom simultaneously in a manner of additional or be configured to another block;
C, when reading, user data and check bit data are read simultaneously, verifies operation in carrying out user data in correction verification module.
CN201810806774.1A 2018-07-20 2018-07-20 A kind of method that subregion is arranged using error correction code check configurable functionality for random memory Pending CN109117301A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201810806774.1A CN109117301A (en) 2018-07-20 2018-07-20 A kind of method that subregion is arranged using error correction code check configurable functionality for random memory
PCT/CN2018/105893 WO2020015134A1 (en) 2018-07-20 2018-09-15 Method enabling ram to configure partition by using configurable function for error-correction code verification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810806774.1A CN109117301A (en) 2018-07-20 2018-07-20 A kind of method that subregion is arranged using error correction code check configurable functionality for random memory

Publications (1)

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CN109117301A true CN109117301A (en) 2019-01-01

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WO (1) WO2020015134A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1952869A (en) * 2005-10-21 2007-04-25 国际商业机器公司 Apparatus, system, and method for writing data to protected partitions of storage media
CN101552032A (en) * 2008-12-12 2009-10-07 深圳市晶凯电子技术有限公司 Method and device for constructing a high-speed solid state memory disc by using higher-capacity DRAM to join in flash memory medium management
CN103744744A (en) * 2014-02-08 2014-04-23 威盛电子股份有限公司 Data storage device and data checking method of volatile storage
CN105843700A (en) * 2016-03-25 2016-08-10 中国科学院微电子研究所 Controller
CN106847343A (en) * 2016-12-08 2017-06-13 上海精密计量测试研究所 The method of testing of the mram memory based on ATE
CN107894898A (en) * 2017-11-28 2018-04-10 中科亿海微电子科技(苏州)有限公司 Refresh device, implementation method and the fpga chip with error correction on SRAM type FPGA pieces

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1952869A (en) * 2005-10-21 2007-04-25 国际商业机器公司 Apparatus, system, and method for writing data to protected partitions of storage media
CN101552032A (en) * 2008-12-12 2009-10-07 深圳市晶凯电子技术有限公司 Method and device for constructing a high-speed solid state memory disc by using higher-capacity DRAM to join in flash memory medium management
CN103744744A (en) * 2014-02-08 2014-04-23 威盛电子股份有限公司 Data storage device and data checking method of volatile storage
CN105843700A (en) * 2016-03-25 2016-08-10 中国科学院微电子研究所 Controller
CN106847343A (en) * 2016-12-08 2017-06-13 上海精密计量测试研究所 The method of testing of the mram memory based on ATE
CN107894898A (en) * 2017-11-28 2018-04-10 中科亿海微电子科技(苏州)有限公司 Refresh device, implementation method and the fpga chip with error correction on SRAM type FPGA pieces

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