CN109112496A - The method of oxide layer on magnetron sputtering apparatus and removal substrate - Google Patents
The method of oxide layer on magnetron sputtering apparatus and removal substrate Download PDFInfo
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- CN109112496A CN109112496A CN201811120608.2A CN201811120608A CN109112496A CN 109112496 A CN109112496 A CN 109112496A CN 201811120608 A CN201811120608 A CN 201811120608A CN 109112496 A CN109112496 A CN 109112496A
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- substrate
- magnetic field
- magnetron sputtering
- sputtering apparatus
- vacuum cavity
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
It includes: vacuum cavity that the present invention, which provides a kind of magnetron sputtering apparatus,；Substrate supporting member, to bearing substrate, the surface of substrate has oxide layer；Magnetic control component has the first magnetic field units and lifting unit, and by lifting unit drive, the region of counterpart substrate is mobile in vacuum cavity；Gas lines are supplied in gas to vacuum cavity；Additional power source is coupled to magnetic control component, for applying voltage to the first magnetic field units；Apply the additional power source in the first magnetic field units, so that gas is formed oxide layer described in plasma bombardment, so that the oxide layer be smashed.And the present invention also provides a kind of methods for removing oxide layer on substrate by magnetron sputtering apparatus, to remove the oxide layer on substrate before carrying out thin film deposition processes.
Description
Technical field
The present invention relates to oxide layers on technical field of liquid crystal display more particularly to a kind of magnetron sputtering apparatus and removal substrate
Method improve the quality and efficiency of display device for effectively eliminating the oxide layer of substrate surface.
Background technique
In many technical fields, on substrate formed with high uniformity layer (that is, on immense surface have
Even thickness) it is important subject under discussion.For example, in the mistake of manufacture thin film transistor (TFT) (Thin film transistor, TFT)
Cheng Zhong, needs to form display metal wire or semiconductor is connected with each other with conducted signal.The control line that TFT needs is by multilayer gold
Belong to film and semiconductor line is constituted, and is and non-disposable achievable.Most metallic film is completed in vacuum chamber with sputtering method,
When proceeding to next procedure, the substrate surface being exposed to the atmosphere oxidation film easy to form.Oxidation film is equivalent to one layer of insulation
Layer will influence whether the conduction of signal with the place of other connections in this way, influence the efficiency of display device.
In the prior art for oxidation film treating method just substrate enter vacuum chamber carry out deposition film before, elder generation exist
The oxide layer for being formed in substrate surface is etched away under atmospheric environment with low concentration acid solution.However, even if by shape under atmospheric environment
After being etched away at the oxide layer in substrate surface, enters the haulage time of vacuum chamber in transmission substrate, be exposed to atmosphere
Substrate surface still will form oxide layer.
Therefore, it is necessary to a kind of sputtering equipment is provided, the effective oxide layer for thoroughly eliminating substrate surface, thus completing
Film deposition can be carried out directly in the vacuum chamber of sputtering equipment after oxide layer processing.
Summary of the invention
The present invention provides a kind of magnetron sputtering apparatus and the method by oxide layer on magnetron sputtering apparatus removal substrate,
The oxide layer that signal transduction can be will affect in the formation of atmospheric environment lower substrate surface in the prior art with effective solution, leads to face
The technical issues of efficiency and quality of plate are deteriorated.
In order to solve the above technical problem, the present invention provides magnetron sputtering apparatus include: vacuum cavity, including a roof
An and bottom；Substrate supporting member is set to the bottom of the vacuum cavity, to bearing substrate, wherein the substrate
Surface has oxide layer；Magnetic control component, has the first magnetic field units and lifting unit, and first magnetic field units are movably set
It is placed in the roof of the vacuum cavity, and drives and correspond in the vacuum cavity area of the substrate by the lifting unit
Domain is mobile；Gas lines, to supply in gas to the vacuum cavity；Additional power source, the additional power source are coupled to
The magnetic control component, for applying voltage to first magnetic field units；Wherein apply the additional power source in first magnetic
Field unit, makes the gas form oxide layer described in plasma bombardment, so that the oxide layer be smashed.
According to an embodiment described herein, the gas is argon gas.
According to an embodiment described herein, the magnetron sputtering apparatus further includes target room, including arranges along first direction
The target of column, the target room is set between the roof and bottom of the vacuum cavity, and is connected to the vacuum cavity, and
The substrate supporting member is oppositely arranged with the target.
According to an embodiment described herein, first magnetic field units with the first direction mutually perpendicular 1
Two directions are arranged.
According to an embodiment described herein, the substrate supporting member includes a plummer, and the plummer is to hold
The substrate is carried, makes the substrate to be arranged perpendicular to the first direction.
According to an embodiment described herein, the substrate supporting member includes a lifting top rod, and the lifting top rod is used
To accept the substrate transmitted by an outside mechanical arm, and the substrate is placed on the plummer.
According to an embodiment described herein, the magnetic control component further includes a sealing mechanism, and the sealing mechanism includes:
One seal chamber, first magnetic field units are set in the seal chamber；
One sealing cover, for keeping first magnetic field units and the sealing mechanism exhausted when the sealing cover is closed
Edge.
According to an embodiment described herein, the magnetron sputtering apparatus further includes one second magnetic field units, along described
One direction is arranged with the target, carries out a thin film deposition processes to form a magnetic field.
In order to solve the above-mentioned technical problem, the present invention is separately provided is aoxidized on substrate by being removed with above-mentioned magnetron sputtering apparatus
The method of layer, comprising: the substrate is placed on a plummer of a substrate supporting member of the magnetron sputtering apparatus, is made
The plummer is located at a processing position, and the target arranged along a first direction is fixed on the magnetron sputtering apparatus
It is in be oppositely arranged in one vacuum cavity and with the plummer；Gas is passed through into the vacuum cavity using a gas lines
Body；It drives a magnetic control component of the magnetron sputtering apparatus to move towards the plummer, while driving an additional power source to institute
It states magnetic control component and applies voltage；And the plasmasphere that the gas is constituted is formed on the surface of the substrate, make described etc.
Gas ions bombard the oxide layer.
According to an embodiment described herein, the gas is argon gas.
According to an embodiment described herein, the processing position of the plummer is in one relative to the first direction
Second direction, the first direction and the second direction are orthogonal.
According to an embodiment described herein, the magnetic control component is set to a roof of the vacuum cavity.
According to an embodiment described herein, the magnetic control component has one first magnetic field units and a lifting unit, institute
State the roof that the first magnetic field units are movably arranged at the vacuum cavity, and by the lifting unit drive and described true
The region that the substrate is corresponded in cavity body is mobile.
According to an embodiment described herein, the substrate supporting member is set to a bottom of the vacuum cavity, institute
Magnetic control component is stated generally to be set in parallel with the substrate supporting member.
According to an embodiment described herein, the substrate supporting member includes a plummer, and the plummer is to hold
The substrate is carried, makes the substrate to be arranged perpendicular to the first direction.
According to an embodiment described herein, the magnetic control component includes a sealing mechanism, and the sealing mechanism includes one
Seal chamber, first magnetic field units are set in the seal chamber, and the sealing mechanism includes that can open and close
One sealing cover, for keeping first magnetic field units and the sealing mechanism to insulate when the sealing cover is closed.
According to an embodiment described herein, the magnetron sputtering apparatus further includes one second magnetic field units, along described
One direction is arranged with the target, carries out a thin film deposition processes to form a magnetic field.
According to an embodiment described herein, after the step of making oxide layer described in the plasma bombardment, by institute
It states plummer and is moved to the deposition position progress thin film deposition processes towards the target.
Magnetron sputtering apparatus provided by the invention and the method that oxide layer on substrate is removed by magnetron sputtering apparatus,
Before the vacuum chamber of magnetron sputtering carries out film deposition, the gas that is used when using thin film deposition processes (such as inert gas, example
Such as argon gas) it the oxide layer to be formed is contacted with oxygen to the metal on atmospheric environment lower substrate pre-processes.The place
Reason is exactly to form a plasmasphere using gas described in gas in the substrate surface, is banged using the plasmasphere physics
Oxide layer is hit, oxide layer is smashed.Carry out subsequent thin film deposition processes again later, it so can be with the effective solution prior art
In formed in atmospheric environment lower substrate surface and will affect the oxide layer of signal transduction, the skill for causing the efficiency of panel and quality to be deteriorated
Art problem.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the schematic diagram of magnetron sputtering apparatus of the invention；
Fig. 2-Fig. 3 is the process schematic representation that magnetron sputtering apparatus of the present invention removes oxide layer on substrate；And
Fig. 4 is the flow diagram that the present invention removes the method for oxide layer on substrate by magnetron sputtering apparatus.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The realization process of the detailed embodiment of the present invention with reference to the accompanying drawing.
In general, film deposition described herein means with sputter material the processing procedure for coating substrate.Here, term " coating "
It is synonymous with term " deposition " to use.Refer to the solid body including source material, the source material in this used term " target "
Material on substrate for forming multiple layer metal and semiconductor line layer by sputtering source material.
As shown in Figure 1 to Figure 3, the signal of oxide layer on substrate is removed for magnetron sputtering apparatus of the invention and using it
Figure.Magnetron sputtering apparatus 1 of the invention includes vacuum cavity 10, substrate supporting member 20, magnetic control component 30, gas lines
40 and power supply 50.Vacuum cavity 10 includes a roof 101 and a bottom 102.Substrate supporting member 20 is set to vacuum cavity
10 bottom 102, to bearing substrate 200.The surface of substrate 200 has oxide layer 210.Magnetic control component 30 has the first magnetic field
Unit 31 and lifting unit 32.First magnetic field units 31 are movably arranged at the roof 101 of vacuum cavity 10, and single by lifting
The region that member 32 drives and corresponds to the substrate 200 in the vacuum cavity 10 is mobile.Gas lines 40 are to supply
In gas to vacuum cavity 10.Power supply 50 is coupled to magnetic control component 30, for applying voltage to the first magnetic field units 31.Work as application
For voltage when the first magnetic field units 31, the gas that gas lines 40 are supplied will form plasma to bombard oxide layer 210,
To which oxide layer 210 be smashed.
Used gas can be inert gas, and argon gas, Krypton, xenon, radon gas can be selected in the inert gas.For just
In explanation, the present embodiment using argon gas as explanation, but not limited to this.
In the present embodiment, the vacuum cavity 10 is a rectangular cavities.The vacuum cavity 10 is internally provided with target room
110.Target 111 arranged in the first direction is arranged in target room 110, and the target room 110 is set to the vacuum cavity 10
It between roof 101 and bottom 102, and is connected to the vacuum cavity 10, and the substrate supporting member 20 and the target 111
It is oppositely arranged.In more detail, the target 111 is with a vertical direction (first direction) setting, first magnetic field units 31
To be arranged with the mutually perpendicular horizontal direction (second direction) of the first direction, as shown in Figure 1.
In addition, the target is opposite with the upper surface of substrate supporting member 20 being located in vacuum cavity 10.The substrate
Support member 20 includes a plummer 201 and a rotary shaft 202, and the plummer 201 makes institute to carry the substrate 200
Substrate 200 is stated to be arranged perpendicular to the first direction.That is, the substrate 200 and first magnetic field units 31 are
It is disposed in parallel relation to one another.
In addition, the substrate supporting member 20 further includes a lifting top rod 203, the lifting top rod 203 to accept by
The substrate 200 of one outside mechanical arm 500 transmission, and the substrate 200 is placed on the plummer 201.
As shown in Figure 1, the magnetic control component 30 further includes a sealing mechanism 33, the sealing mechanism 33 includes a seal chamber
331 and a sealing cover 332.First magnetic field units 31 are set in the seal chamber 331.Sealing cover 332 is used in institute
It states and first magnetic field units 31 is kept to insulate when sealing cover 332 is closed with the sealing mechanism 33.
The process flow chart for please referring to Fig. 2-Fig. 3 utilizes film before the vacuum chamber of magnetron sputtering carries out film deposition
The gas (such as inert gas, such as argon gas) used when depositing operation connects the metal on atmospheric environment lower substrate with oxygen
The oxide layer that touching is formed is pre-processed.In short, the processing is exactly to utilize gas described in gas in the substrate surface
Body is formed a plasma and is smashed oxide layer using the plasma bombardment oxide layer.Carry out subsequent film again later
Depositing operation.Therefore, the magnetic control component 30 directly can use the gas (such as argon gas) and handle oxide layer.
More specifically operation is as described below.Substrate 200 is placed on lifting top rod 203 by the external mechanical arm 500,
Substrate 200 with lifting top rod 203 mobile decline and be placed on the plummer 201.At this point, the substrate 200 because
To be exposed under normal atmospheric environment, surface will form oxide layer 210, and oxide layer 210 is equivalent to a layer insulating.It connects down
Come, the gas lines 40 are passed through the gas (such as argon gas), and the lifting unit 32 drives the magnetic control component 30
Along the first direction (vertical direction) towards the movement of the region of the substrate 200, and stop surely in a predetermined position, at this time institute
It states power supply 50 and applies voltage to first magnetic field units 31, it is noted that first magnetic field units 31 are applied voltages
In the case where can just generate magnetism, additional voltage can make first magnetic field units 31 form negative potential.And add outer
In the case where voltage, the sealing cover 332 is closed, and first magnetic field units 31 is kept to insulate with the sealing mechanism 33, this
Outside, the exterior insulation of the sealing cover 332 and the sealing mechanism 33, forms 0 current potential.So formed with the first magnetic field units 31
Voltage difference forms electric field.
Next, forming plasma to bang on 200 surface of substrate after applying voltage to the first magnetic field units 31
The oxide layer on 200 surface of substrate is hit, as shown in Fig. 2, making to aoxidize damage layer.
Then the first magnetic field units 31 move back to just along the first direction (vertical direction) far from the substrate 200
Beginning position.Wherein, the magnetron sputtering apparatus 1 further includes one second magnetic field units 112, is set in the target room 110,
And be arranged along the first direction and the target 111, to form a magnetic field.The rotary shaft 202 drives described hold
Microscope carrier 201 makes the substrate 200 move to the position of the first direction (vertical direction), i.e. institute with the plummer 201
State rotary shaft 202 makes the substrate 200 by the position perpendicular to the first direction (vertical direction) to rotate the substrate 200
It sets and is moved to the position for being parallel to the first direction with towards the target 111, thus after starting to removing oxide layer 210 is removed
Substrate 200 carries out a thin film deposition processes, as shown in Figure 3.The thin film deposition processes are existing thin film deposition processes, not in this
It repeats again.It so just completes and completes oxide layer processing and thin film deposition processes in a vacuum cavity.
It please refers to Fig. 4 and cooperates shown in Fig. 1-3, wherein Fig. 4 is that the present invention passes through oxygen on magnetron sputtering apparatus removal substrate
Change the flow diagram of the method for layer.
The present invention separately provides the method by removing oxide layer on substrate with above-mentioned magnetron sputtering apparatus, comprising: step
S01: the substrate is placed on a plummer of a substrate supporting member of the magnetron sputtering apparatus, makes the plummer
Position is handled positioned at one, and the target arranged along a first direction is fixed on to a vacuum cavity of the magnetron sputtering apparatus
It is interior and with the plummer in being oppositely arranged.Step S02: gas is passed through into the vacuum cavity using a gas lines
Body.Step S03: driving a magnetic control component of the magnetron sputtering apparatus to move towards the plummer, while driving one is additional
Power supply applies voltage to the magnetic control component；And step S04: the surface of the substrate formed what the gas was constituted etc. from
Daughter layer makes oxide layer described in the plasma bombardment.
In one embodiment, in step S01, the processing position of the plummer 201 is that substrate 200 is placed on and holds
The position of oxide layer 210 thereon to be processed such as on microscope carrier 200.The processing position of the plummer 201 is relative to described
First direction is in a second direction, and the first direction and the second direction are orthogonal.That is, the plummer
201 when handling position, and the substrate 200 and first magnetic field units 31 are disposed in parallel relation to one another.
The magnetic control component 30 is set to a roof 101 of the vacuum cavity 10.The magnetic control component 30 has one the
One magnetic field units 31 and a lifting unit 32, first magnetic field units 31 are movably arranged at the top of the vacuum cavity 10
Wall 101, and it is mobile by the region that the lifting unit 32 drives and corresponds to the substrate 200 in the vacuum cavity 10.
Substrate 200 with lifting top rod 203 mobile decline and be placed on the plummer 201.Next, in step
In rapid S02, the gas lines 40 are passed through the gas (such as argon gas).Later, in step S03, the lifting is single
Member 32 drives the magnetic control component 30 mobile towards the region of the substrate 200 along the first direction (vertical direction), and
Stop surely in a predetermined position, the additional power source 50 applies voltage to first magnetic field units 31 at this time.
In step S04, after applying voltage to the first magnetic field units 31, plasma is formed on 200 surface of substrate
To bombard the oxide layer on 200 surface of substrate, make to aoxidize damage layer.
Then the first magnetic field units 31 move back to just along the first direction (vertical direction) far from the substrate 200
Beginning position.Wherein, the magnetron sputtering apparatus 1 further includes the second magnetic field units 112, is set in the target room 110, and edge
The first direction is arranged with the target 111, to form magnetic field.The rotary shaft 202 drives the plummer 201
The substrate 200 is set to move to the position of the first direction (vertical direction), i.e., the described rotary shaft with the plummer 201
202 make the substrate 200 by being moved to perpendicular to the position of the first direction (vertical direction) to rotate the substrate 200
The position of the first direction is parallel to towards the target 111, to start to removing the substrate 200 after removing oxide layer 210
Carry out a thin film deposition processes.It so just completes and completes oxide layer processing and thin film deposition processes in a vacuum cavity.
Magnetron sputtering apparatus provided by the invention and the method that oxide layer on substrate is removed by magnetron sputtering apparatus,
Before the vacuum chamber of magnetron sputtering carries out film deposition, the gas that is used when using thin film deposition processes (such as inert gas, example
Such as argon gas) it the oxide layer to be formed is contacted with oxygen to the metal on atmospheric environment lower substrate pre-processes.The place
Reason is exactly to form a plasmasphere using gas described in gas in the substrate surface, is banged using the plasmasphere physics
Oxide layer is hit, oxide layer is smashed.Carry out subsequent thin film deposition processes again later, it so can be with the effective solution prior art
In formed in atmospheric environment lower substrate surface and will affect the oxide layer of signal transduction, the skill for causing the efficiency of panel and quality to be deteriorated
Art problem.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (10)
1. a kind of magnetron sputtering apparatus characterized by comprising
Vacuum cavity, including a roof and a bottom；
Substrate supporting member is set to the bottom of the vacuum cavity, to bearing substrate, wherein the surface of the substrate has
Oxide layer；
Magnetic control component, has the first magnetic field units and lifting unit, and first magnetic field units are movably arranged at described true
The roof of cavity body, and the region for being driven by the lifting unit and corresponding to the substrate in the vacuum cavity is mobile；
Gas lines, to supply in gas to the vacuum cavity；
Additional power source, the additional power source are coupled to the magnetic control component, for applying voltage to first magnetic field units；
Wherein apply the additional power source in first magnetic field units, the gas is made to form oxidation described in plasma bombardment
Layer, so that the oxide layer be smashed.
2. magnetron sputtering apparatus according to claim 1, which is characterized in that the magnetron sputtering apparatus further includes target
Room, including target arranged in the first direction, the target room are set between the roof and bottom of the vacuum cavity, and with
Vacuum cavity connection, and the substrate supporting member is oppositely arranged with the target, and first magnetic field units with
It is arranged with the mutually perpendicular second direction of the first direction.
3. magnetron sputtering apparatus according to claim 2, which is characterized in that the substrate supporting member includes a carrying
Platform, the plummer make the substrate to be arranged perpendicular to the first direction, and the substrate to carry the substrate
Support member include a lifting top rod, the lifting top rod to accept by an outside mechanical arm transmit the substrate, and
The substrate is placed on the plummer.
4. magnetron sputtering apparatus according to claim 1, which is characterized in that the magnetic control component further includes a sealer
Structure, the sealing mechanism include:
One seal chamber, first magnetic field units are set in the seal chamber；
One sealing cover, for keeping first magnetic field units and the sealing mechanism to insulate when the sealing cover is closed.
5. magnetron sputtering apparatus according to claim 2, which is characterized in that the magnetron sputtering apparatus further includes one second
Magnetic field units are arranged along the first direction and the target, carry out a thin film deposition processes to form a magnetic field.
6. a kind of method for removing oxide layer on substrate by magnetron sputtering apparatus, which is characterized in that the described method includes:
The substrate is placed on a plummer of a substrate supporting member of the magnetron sputtering apparatus, makes the plummer
Position is handled positioned at one, and the target arranged along a first direction is fixed on to a vacuum cavity of the magnetron sputtering apparatus
It is interior and with the plummer in being oppositely arranged；
Gas is passed through into the vacuum cavity using a gas lines；
It drives a magnetic control component of the magnetron sputtering apparatus to move towards the plummer, while driving an additional power source to institute
It states magnetic control component and applies voltage；And
The plasmasphere that the gas is constituted is formed on the surface of the substrate, makes oxidation described in the plasma bombardment
Layer.
7. according to the method described in claim 6, it is characterized in that, the processing position of the plummer is relative to described
One direction is in a second direction, and the first direction and the second direction are orthogonal, and the substrate supporting member packet
A plummer is included, the plummer makes the substrate to carry the substrate to be arranged perpendicular to the first direction.
8. according to the method described in claim 6, it is characterized in that, the magnetic control component is set to a top of the vacuum cavity
Wall, the magnetic control component have one first magnetic field units and a lifting unit, and first magnetic field units are movably arranged at
The roof of the vacuum cavity, and by the lifting unit drive and correspond in the vacuum cavity region of the substrate
It is mobile.
9. according to the method described in claim 6, it is characterized in that, the magnetic control component includes a sealing mechanism, the sealing
Mechanism includes a seal chamber, and first magnetic field units are set in the seal chamber, and the sealing mechanism includes that can open
The sealing cover for opening and closing, for keeping first magnetic field units and the sealing mechanism exhausted when the sealing cover is closed
Edge.
10. according to the method described in claim 6, it is characterized in that, the magnetron sputtering apparatus further includes one second magnetic field list
Member is arranged along the first direction and the target, carries out a thin film deposition processes to form a magnetic field.
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| CN201811120608.2A CN109112496B (en) | 2018-09-26 | 2018-09-26 | Magnetron sputtering equipment and method for removing oxide layer on substrate |
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| CN201811120608.2A CN109112496B (en) | 2018-09-26 | 2018-09-26 | Magnetron sputtering equipment and method for removing oxide layer on substrate |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102027564A (en) * | 2008-04-28 | 2011-04-20 | 塞梅孔公司 | Device and method for pretreating and coating bodies |
| CN202688424U (en) * | 2012-07-09 | 2013-01-23 | 北京奥依特科技有限责任公司 | Magnetically-controlled co-sputtering coating machine |
| CN103805994A (en) * | 2012-11-08 | 2014-05-21 | 无锡新三洲特钢有限公司 | Method for improving binding force of plating by adopting magnetron sputtering |
| US20150315697A1 (en) * | 2004-02-22 | 2015-11-05 | Zond, Llc | Apparatus and method for sputtering hard coatings |
| CN107614748A (en) * | 2015-05-22 | 2018-01-19 | 株式会社爱发科 | Magnetic control sputtering device |
| CN108165946A (en) * | 2018-02-02 | 2018-06-15 | 深圳华远微电科技有限公司 | A kind of Ion Cleaning magnetic control sputtering system |
-
2018
- 2018-09-26 CN CN201811120608.2A patent/CN109112496B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150315697A1 (en) * | 2004-02-22 | 2015-11-05 | Zond, Llc | Apparatus and method for sputtering hard coatings |
| CN102027564A (en) * | 2008-04-28 | 2011-04-20 | 塞梅孔公司 | Device and method for pretreating and coating bodies |
| CN202688424U (en) * | 2012-07-09 | 2013-01-23 | 北京奥依特科技有限责任公司 | Magnetically-controlled co-sputtering coating machine |
| CN103805994A (en) * | 2012-11-08 | 2014-05-21 | 无锡新三洲特钢有限公司 | Method for improving binding force of plating by adopting magnetron sputtering |
| CN107614748A (en) * | 2015-05-22 | 2018-01-19 | 株式会社爱发科 | Magnetic control sputtering device |
| CN108165946A (en) * | 2018-02-02 | 2018-06-15 | 深圳华远微电科技有限公司 | A kind of Ion Cleaning magnetic control sputtering system |
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| CN109112496B (en) | 2020-11-24 |
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