CN109112490A - Spliced target welding method - Google Patents
Spliced target welding method Download PDFInfo
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- CN109112490A CN109112490A CN201710486838.XA CN201710486838A CN109112490A CN 109112490 A CN109112490 A CN 109112490A CN 201710486838 A CN201710486838 A CN 201710486838A CN 109112490 A CN109112490 A CN 109112490A
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- Prior art keywords
- target
- heat
- spliced
- welding
- backboard
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
Abstract
A kind of spliced target welding method, comprising: backboard and at least two pieces of target seed blocks and multiple heat-resisting partitions are provided；Within the scope of the desired width in gap of the thickness of the heat-resisting partition between target seed block；The target seed block and heat-resisting partition are staggeredly placed, the side of target seed block is bonded the plate face of heat-resisting partition, forms spliced target；The spliced target and backboard are welded using welding procedure, to form back plate type spliced target；Remove heat-resisting partition.The gap width of the adjacent target seed block of the large-size target of acquisition is the thickness size of heat-resisting partition, as desired width size, and the gap size of adjacent target seed block can be effectively controlled by heat-resisting partition, easy to operate.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of spliced target welding methods.
Background technique
Sputter coating is belonged to physical gas-phase deposite method and prepares one of technique of film, in particular to banged using high energy particle
Target material surface is hit, so that target atom or molecule obtain enough energy evolutions, and substrate or workpiece surface are deposited on, thus shape
At film.
Since backboard has good electrical and thermal conductivity performance, and fixed supporting role can also be played, therefore, target is plating
It needs to weld together with backboard (oxygen-free copper or aluminium etc.) before film, in the welding process the general central position for requiring to be welded on backboard
It sets, is assembled to sputtering base after welding jointly.
It being limited by technical level, the size of target is typically small, but in sputter coating, it is often necessary to large-sized target
Material.A kind of method that the prior art makes inexpensive large-size target is after solder infiltrates backboard, by the target of muti-piece small size
Material seed block splices on the welding surface of backboard, after solder solidification, obtains the large-size target being welded on backboard.In splicing
In, between target seed block need to there are gaps, on the one hand avoid after the completion of welding, when being corrected adjustment to the backboard of deformation, target
Mutual extrusion between material seed block causes target seed block fragmentation；On the other hand, the thermal expansion for target seed block in coating process provides sky
Between.But stayed gap can not be excessive, if gap is excessive, the large-size target welded is high when carrying out sputter coating
Energy particle can pass through gap bombardment to the surface of backboard, cause plating fouling membrane；In addition, gap is excessive, it is easy air residual, has been made
At difficulty is vacuumized, the release of residual gas will affect the quality of plated film in coating process.Therefore it when spliced target seed block, takes an examination
Consider the size in the gap between target seed block.
According to existing spliced target welding method, the gap between target seed block relies primarily on itself warp of staff
It tests, is unfavorable for the large-size target for controlling, welding, the excessive or too small problem in gap between the target seed block being easy to appear,
After problem occurs, then need to weld large-size target, waste of manpower and material resources again.
Summary of the invention
Problems solved by the invention is existing spliced target welding method, it has not been convenient to control the seam between adjacent target seed block
Gap.
To solve the above problems, the present invention provides a kind of spliced target welding method, comprising: provide backboard and at least two pieces
Target seed block and multiple heat-resisting partitions；The desired width model in gap of the thickness of the heat-resisting partition between target seed block
In enclosing；The target seed block and heat-resisting partition are staggeredly placed, the side of target seed block is bonded the plate face of heat-resisting partition, is formed and is spelled
Connect formula target；The spliced target and backboard are welded using welding procedure, to form back plate type spliced target；Remove it is heat-resisting every
Plate.
Optionally, the welding procedure uses method for welding.
Optionally, the method for welding includes: the welding surface in the spliced target, and/or, on the welding surface of backboard
Solder is added, and the solder heat is extremely melted；The mobile spliced target is described spliced to the central location of backboard
The welding surface of the welding surface fitting backboard of target；Spliced target type and backboard are cooled down.
Optionally, after the welding surface of the welding surface fitting backboard of the spliced target, and before carrying out cooling, in institute
State uniform holding multiple pieces briquetting in the sputter face of spliced target.
Optionally, the spliced target welding method further include: heat-resistant piece is provided, after forming spliced target, and
Before welding the spliced target and backboard, the relative position of the target seed block and heat-resisting partition is consolidated using the heat-resistant piece
It is fixed.
Optionally, the heat-resistant piece is heat resistant adhesive tape or heat-resisting rope.
Optionally, after forming back plate type spliced target, the heat-resistant piece on back plate type spliced target is removed.
Optionally, the spliced target welding method further include: Thermal Protective film is provided, after forming spliced target,
And before welding the spliced target and backboard, the entire sputter face of spliced target is covered with the Thermal Protective film.
Optionally, the Thermal Protective film is heat resistant adhesive tape, perfluoroethylene-propylene film or polytetrafluoroethylene film.
Optionally, after forming back plate type spliced target, the Thermal Protective film on back plate type spliced target is removed.
Optionally, the lateral area of the heat-resisting partition between the target seed block is greater than or equal to the side of the target seed block
Product.
Optionally, the heat-resisting partition is polyfluortetraethylene plate or perfluoroethylene-propylene plate.
Optionally, the heat-resisting partition with a thickness of 0.2~0.5mm.
Optionally, the target seed block is silicon target, lead target, oxide ceramics target, silicide ceramics target, fluoride ceramics
Target.
Optionally, the heat-resisting partition with a thickness of 0.2~0.3mm.
Compared with prior art, technical solution of the present invention has the advantage that
The target seed block and heat-resisting partition are staggeredly placed, and the side of target seed block is bonded the plate face of heat-resisting partition, makes
A heat-resisting partition is all accompanied between the target seed block of the spliced target formed, the thickness of the heat-resisting partition is between target seed block
Gap desired width within the scope of, after the completion of welding, remove heat-resisting partition, the adjacent target seed of the large-size target of acquisition
The gap width of block is that the thickness size of heat-resisting partition can be controlled effectively that is, within the scope of desired width by heat-resisting partition
The gap of adjacent target seed block is made, it is easy to operate.
Further, the heat-resisting partition can be selected polyfluortetraethylene plate or perfluoroethylene-propylene plate, polyfluortetraethylene plate and
Perfluoroethylene-propylene plate high temperature resistant, property is stablized under high temperature, in addition, the friction system of perfluoroethylene-propylene plate and polyfluortetraethylene plate
Number is very small, facilitates removal.
Further, target seed block and heat-resisting partition can be pasted together with heat resistant adhesive tape, alternatively, being restricted with heat-resisting by target
Seed block and heat-resisting partition bundle, and the spliced target easy to remove prevents target to the central location of backboard
The case where seed block or heat-resisting partition are fallen or position is moved, in addition, the adjustment spliced target it is whole to central location also compared with
It for convenience, can be to avoid moving the troublesome operation that each target seed block or heat-resisting partition are adjusted.
Detailed description of the invention
Fig. 1 is the schematic diagram of existing spliced target welding method；
Fig. 2 is the flow chart of spliced target welding method disclosed by the embodiments of the present invention；
Fig. 3 is the side view of backboard disclosed by the embodiments of the present invention, target seed block, heat-resisting partition；
Fig. 4 is the side view of spliced target disclosed by the embodiments of the present invention；
Fig. 5 is the side view of back plate type target disclosed by the embodiments of the present invention；
Fig. 6 is a kind of schematic diagram of heat-resistant piece disclosed by the embodiments of the present invention；
Fig. 7 is the schematic diagram of another heat-resistant piece disclosed by the embodiments of the present invention；
Fig. 8 is the top view of the backboard of addition copper wire disclosed by the embodiments of the present invention；
Fig. 9 is the front view of the back plate type target disclosed by the embodiments of the present invention containing copper wire；
Figure 10 is the top view of briquetting disclosed by the embodiments of the present invention；
Figure 11 is the front view of briquetting disclosed by the embodiments of the present invention；
Figure 12 is the schematic diagram of Thermal Protective film disclosed by the embodiments of the present invention；
Figure 13 is the side view of large-size target disclosed by the embodiments of the present invention.
Specific embodiment
There is kind of a spliced target welding method at present, it is specific as shown in Figure 1, splicing muti-piece target seed block 120 in backboard 110
On.But the gap of adjacent target seed block 120 is not easily controlled.
Inventor is repeatedly practiced, and is found a kind of spliced target welding method, i.e., is put in the gap of adjacent target seed block
Heat-resisting partition is set, and is removed after the completion of welding, the gap of the target seed block of the large-size target of acquisition is in desired width model
In enclosing, make to solve the problems, such as that the gap of target seed block is difficult to control.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Fig. 2 is the flow chart of spliced target welding method disclosed by the embodiments of the present invention.As shown in Fig. 2, specific splicing
Target welding step are as follows:
It executes step S10: backboard and at least two pieces of target seed blocks and multiple heat-resisting partitions, the heat-resisting partition is provided
Gap of the thickness between target seed block desired width within the scope of；
Execute step S20: the target seed block and heat-resisting partition be staggeredly placed, the fitting of the side of target seed block it is heat-resisting every
The plate face of plate forms spliced target；
It executes step S30: welding the spliced target and backboard using welding procedure, to form back plate type splicing target
Material；
It executes step S40: removing heat-resisting partition.
Fig. 3~Figure 13 is the schematic diagram of spliced target welding method disclosed by the embodiments of the present invention.
As shown in figure 3, backboard 10 and at least two pieces of target seed blocks 20 and multiple heat-resisting partitions 30 are provided, it is described heat-resisting
Within the scope of the desired width in gap of the thickness a of partition between target seed block 20.
In the present embodiment, for target seed block 20 in bulk, opposite two bottom surface of target seed block 20 is respectively target as sputter
The shape of face 22 and target welding surface 21, the target as sputter face 22 and target welding surface 21 can for triangle, rectangle, sector,
Diamond shape or other polygons need the large-size target that can be spliced into the specific shape of design.One plate face of backboard 10 is back
Plate welding surface 11, target seed block 20 is subsequent need to be spliced on the backboard welding surface 11, therefore the area of backboard welding surface 11 needs
Greater than all target seed blocks 20 target welding surface 21 area and.The thickness a of heat-resisting partition 30 is between target seed block 20
Within the scope of the desired width in gap, desired width range refers to the gap width model between the target seed block of qualified large-size target
It encloses, is obtained by theoretical calculation or practical experience, under normal circumstances, the desired width range in the gap between target seed block 20 is 0.2
~0.5mm, the target seed block 20 are carbon target, silicon target, lead target, oxide ceramics target, silicide ceramics target, fluoride ceramic target
When, the desired width range in the gap between target seed block 20 is 0.2~0.3mm, therefore the thickness a of heat-resisting partition 30 is then selected in
In 0.2~0.3mm.The heat-resisting partition 30 is perfluoroethylene-propylene plate or perfluoroethylene-propylene, polytetrafluoroethylene (PTFE) and poly- perfluor
Second propylene belongs to heat-resisting material, retention properties can stablize in the hot environment of subsequent welding, and coefficient of friction is low,
Convenient for removal.In addition, for the benefit of the subsequent heat-resisting partition 30 of removal, the plate face area of the heat-resisting partition 30 are greater than or equal to target
The lateralarea of seed block 20.
Referring to Fig. 4, the target seed block 20 and heat-resisting partition 30 are staggeredly placed, the side fitting of target seed block 20 is heat-resisting
The plate face of partition 30 forms spliced target 100.
In the present embodiment, target seed block 20 first can be placed according to the shape of the large-size target of design, then at every two pieces
A heat-resisting partition 30 is placed between the side of target seed block 20, and the side of target seed block 20 is bonded to the plate of heat-resisting partition 30
Face obtains staggered target seed block 20 and heat-resisting partition 30.
Referring to Fig. 5, spliced target 100 and backboard 10 are welded using welding procedure, to form back plate type spliced target
200。
In the present embodiment, the welding method of spliced target 100 and backboard 10 includes soldering, hot isostatic pressing method and hot pressing
Method mostly uses method for welding at present, and spliced target 100 and backboard in the present invention are illustrated below with reference to three steps of soldering
10 form the process of back plate type spliced target 200.
The first step, the target welding surface 21 on spliced target 100, and/or, add on the backboard welding surface 11 of backboard 10
Add solder, and the solder heat is extremely melted.
For adding solder on the backboard welding surface 11 in backboard 10, first by 11 court of backboard welding surface of backboard 10
On, be placed in welding platform, solder added on backboard welding surface 11, then open welding platform heater, to solder plus
Heat still needs to keep heated at constant temperature for a period of time, the solder of fusing is made sufficiently to infiltrate the backboard welding surface 11 of backboard 10 to after melting.
Second step, the mobile spliced target 100 to the central location of backboard 10, on the spliced target 100
The backboard welding surface 11 of the fitting backboard 10 of target welding surface 21.
The target as sputter face 22 that usable vacuum chuck is sucked on spliced target 100 is moved, by spliced target
100 are moved to the central location of backboard 10.Spliced target is being formed referring to Fig. 6, Fig. 7 for spliced target 100 easy to remove
After material 100, and before welding the spliced target 100 and backboard 10, using heat-resistant piece by the target of the spliced target 100
The relative position of material seed block 20 and heat-resisting partition 30 is fixed.Heat-resistant piece is heat resistant adhesive tape 41 or heat-resisting rope 42, the heat-resistant piece are
When heat resistant adhesive tape 41, referring in particular to Fig. 6, the juncture area of target seed block 20 and heat-resisting partition 30 is pasted with heat resistant adhesive tape 41, most
The target seed block 20 of entire spliced target 100 and heat-resisting partition 30 are pasted together at last；The heat-resistant piece is heat-resisting rope 42
When, referring in particular to Fig. 7, entire spliced target 100 is bundled with heat-resisting rope 42, target seed block 20 and heat-resisting partition 30 are bundled in
Together.To avoid occurring target seed block 20 during movement spliced target 100 or heat-resisting partition 30 is fallen or position
The case where moving can keep away in addition, the adjustment spliced target 100 is whole also more convenient to the central location of backboard 10
Exempt to move the troublesome operation that each target seed block 20 or heat-resisting partition 30 are adjusted.The heat-resistant piece is in subsequent brazing process knot
Beam removes after forming back plate type spliced target 200.
For the quality for reinforcing soldering, reference Fig. 8, Fig. 9, after the brazing filler metal melts on backboard welding surface 11, and in mobile institute
Before stating spliced target 100 to the central location of backboard 10, more can be uniformly placed on the backboard welding surface 11 of backboard 10
The identical copper wire 50 of diameter, is then moved again on spliced target 100 to backboard 10.Copper wire 50 can target welding surface 21 with
Gap is caused between backboard welding surface 11, also, since the diameter of copper wire 50 is identical, gap size is consistent everywhere.One side
Face, the gap are provided the space retained for the solder of fusing, solder are avoided to be overflowed due to extruding；On the other hand, by institute
The in the same size of gap is stated, therefore the solder melted can uniformly be spread between target welding surface 21 and backboard welding surface 11
Exhibition.It is suitable that the diameter of copper wire 50 needs, and the diameter of the copper wire 50 is too small, and the solder content that copper wire 50 can retain is small, most of
Solder can still overflow；The diameter of copper wire 50 is excessive, and after moving on spliced target 100 to backboard 10, solder can not infiltrate target
Welding surface 21 influences the quality of soldering.In addition, the length of copper wire 50 cannot exceed the edge of spliced target 100, prevent from splashing
When penetrating plated film, high energy particle is struck to copper wire 50, influences the quality of plated film.
For the effect for improving soldering, 0, Figure 11 referring to Fig.1, in the spliced target 100 of movement to the central location of backboard 10
Afterwards, and before subsequent cooling down operation, muti-piece briquetting 60 is uniformly placed on the target as sputter face 22 of spliced target 100,
The pressure that briquetting 60 applies can make more fill between solder and target as sputter face 22 and between solder and backboard welding surface 11
The phase counterdiffusion divided, to obtain stronger soldering effect.The number and weight of the briquetting 60 need to be in view of described
The bearing capacity of target seed block 20 is the citing of silicon target seed block with the target seed block 20, and what target as sputter face 22 was born comes from
The pressure of briquetting 60 is 2500Pa~5000Pa, and pressure can not be excessive, avoids target seed block 20 broken；Pressure can not be too small, no
It is then very little to the effect of the phase counterdiffusion.
In addition, referring to Fig.1 2, the solder splashed in order to prevent scratches target as sputter face 22, is forming spliced target 100
Afterwards, and before welding the spliced target 100 and backboard 10, target as sputter face 22 can be covered with Thermal Protective film 70, to protect
Protect target as sputter face 22.Thermal Protective film 70 is heat resistant adhesive tape, perfluoroethylene-propylene film or polytetrafluoroethylene film, can use heat-resistant adhesive
With the target as sputter face 22 of entire spliced target 100 is pasted, alternatively, being attached with perfluoroethylene-propylene film or polytetrafluoroethylene film
The target as sputter face 22 of entire spliced target 100, after soldering is completed, forms back plate type spliced target 200, needing will be heat-resisting
Protecting film 70 removes.
Third step cools down spliced target 100 and backboard 10, forms back plate type spliced target 200.
Concrete operations are to close welding platform heater, it is naturally cold that air can be used to spliced target 100 and backboard 10
But or the cooling method of indirect type water, solidify the solder between spliced target 100 and the backboard welding surface 11 of backboard 10,
To weld together spliced target 100 with backboard 10, to form back plate type spliced target 200.To spliced target 100
And the cooling velocity of backboard 10 can not be too fast, the otherwise temperature distributing disproportionation of 10 each section of backboard, mutual difference is larger, causes to carry on the back
The deformation quantity of plate 10 is larger.
After forming back plate type spliced target 200, referring to Fig.1 3, remove heat-resisting partition 30.In the present embodiment, tweezers can be used
Heat-resisting partition 30 is clamped from the part exposed between target seed block 20, heat-resisting partition 30 is pressed from both sides from acquisition large-size target 300.
By the spliced target welding method, the gap of the adjacent target seed block 20 of the large-size target 300 of acquisition is all
It is easy to operate within the scope of desired width, it is easy to control.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (15)
1. a kind of spliced target welding method characterized by comprising
Backboard and at least two pieces of target seed blocks and multiple heat-resisting partitions are provided；
Within the scope of the desired width in gap of the thickness of the heat-resisting partition between target seed block；
The target seed block and heat-resisting partition are staggeredly placed, the side of target seed block is bonded the plate face of heat-resisting partition, is formed and is spelled
Connect formula target；
The spliced target and backboard are welded using welding procedure, to form back plate type spliced target；
Remove heat-resisting partition.
2. spliced target welding method as described in claim 1, which is characterized in that the welding procedure uses method for welding.
3. spliced target welding method as claimed in claim 2, which is characterized in that the method for welding includes:
In the welding surface of the spliced target, and/or, solder is added on the welding surface of backboard, and extremely by the solder heat
Fusing；
For the mobile spliced target to the central location of backboard, the welding surface of the spliced target is bonded the welding of backboard
Face；
Spliced target type and backboard are cooled down.
4. spliced target welding method as claimed in claim 3, which is characterized in that in the welding face paste of the spliced target
After the welding surface for closing backboard, and before carrying out cooling, the uniform holding multiple pieces briquetting in the sputter face of the spliced target.
5. spliced target welding method as described in claim 1, which is characterized in that further include: heat-resistant piece is provided, is spelled being formed
After connecing formula target, and before welding the spliced target and backboard, using the heat-resistant piece by the target seed block and heat-resisting
The relative position of partition is fixed.
6. spliced target welding method as claimed in claim 5, which is characterized in that the heat-resistant piece is heat resistant adhesive tape or heat-resisting
Rope.
7. spliced target welding method as claimed in claim 5, which is characterized in that after forming back plate type spliced target, go
Except the heat-resistant piece on back plate type spliced target.
8. spliced target welding method as described in claim 1, which is characterized in that further include: Thermal Protective film is provided, in shape
After spliced target, and before welding the spliced target and backboard, spliced target is covered with the Thermal Protective film
Entire sputter face.
9. spliced target welding method as claimed in claim 8, which is characterized in that the Thermal Protective film be heat resistant adhesive tape,
Perfluoroethylene-propylene film or polytetrafluoroethylene film.
10. spliced target welding method as claimed in claim 8, which is characterized in that after forming back plate type spliced target, go
Except the Thermal Protective film on back plate type spliced target.
11. spliced target welding method as described in claim 1, which is characterized in that between the target seed block it is heat-resisting every
The lateral area of plate is greater than or equal to the lateral area of the target seed block.
12. spliced target welding method as described in claim 1, which is characterized in that the heat-resisting partition is polytetrafluoroethylene (PTFE)
Plate or perfluoroethylene-propylene plate.
13. spliced target welding method as described in claim 1, which is characterized in that the heat-resisting partition with a thickness of 0.2~
0.5mm。
14. spliced target welding method as described in claim 1, which is characterized in that the target seed block be silicon target, lead target,
Oxide ceramics target, silicide ceramics target, fluoride ceramic target.
15. spliced target welding method as claimed in claim 13, which is characterized in that the heat-resisting partition with a thickness of 0.2
~0.3mm.
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|---|---|---|---|
| CN201710486838.XA CN109112490A (en) | 2017-06-23 | 2017-06-23 | Spliced target welding method |
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| CN114507847A (en) * | 2021-12-30 | 2022-05-17 | 北京航空航天大学宁波创新研究院 | Large-size spliced planar target binding method |
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| CN113042841A (en) * | 2021-03-19 | 2021-06-29 | 武汉江丰电子材料有限公司 | Welding method of strip-shaped titanium target assembly |
| CN114507847A (en) * | 2021-12-30 | 2022-05-17 | 北京航空航天大学宁波创新研究院 | Large-size spliced planar target binding method |
| CN114507847B (en) * | 2021-12-30 | 2023-04-14 | 北京航空航天大学宁波创新研究院 | Large-size spliced planar target binding method |
| CN115302066A (en) * | 2022-09-09 | 2022-11-08 | 宁波江丰电子材料股份有限公司 | Spliced tungsten-nickel alloy target material assembly and welding method thereof |
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