CN109087989B - Preparation method of multifunctional thermoelectric thin film power generation and light intensity sensing device - Google Patents
Preparation method of multifunctional thermoelectric thin film power generation and light intensity sensing device Download PDFInfo
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Abstract
The invention discloses a preparation method of a multifunctional thermoelectric thin film power generation and light intensity sensing device, and belongs to the technical field of energy collection and sensing of miniature thin film functional devices. The method comprises the following steps: pretreating the substrate; depositing a patterned high-density N-type thermoelectric thin film on the pretreated substrate; annealing the N-type thermoelectric film; depositing a patterned high-density P-type thermoelectric thin film and an electrode thin film on the pretreated substrate, wherein the electrode thin film is formed by connecting thermocouples formed by the patterns of the P-type thermoelectric thin film and the N-type thermoelectric thin film in series; a heat absorbing film is pasted on the hot end of the thermocouple and then packaged to form a thermoelectric device; and assembling a thermoelectric device with the Fresnel lens, the heat dissipation structure and the shell to form the multifunctional thermoelectric film power generation and light intensity sensing device. The invention can realize power generation and light intensity sensing, and the thermoelectric thin film device prepared by the method has the characteristics of high output voltage, high responsivity and the like through a light intensity sensing test.
Description
Technical Field
The invention belongs to the technical field of energy collection and sensing of micro thin-film functional devices, and particularly relates to a preparation method of a multifunctional high-density thermoelectric thin-film power generation and light intensity sensing device with high output voltage, high responsivity, high sensitivity, high accuracy, high reliability and wide response range.
Background
The thermoelectric device is an all-solid-state device, does not contain any moving parts, thus reducing physical and electrical failures, and has high reliability without noise during long-term independent operation. Thermoelectric devices based on the seebeck effect have been applied in the fields of power generation, temperature measurement, infrared detection, and the like. However, with the development of low power consumption and wireless electronic devices and the continuous updating of components such as sensors and micro electro mechanical systems, a micro energy collection and sensing system is urgently needed. The output power of the thin film thermoelectric device can reach the level of micro watt or even milliwatt, and the power supply requirements of a plurality of systems can be met. And compared with a block thermoelectric device, the thin film device has the advantages of small volume, light weight, quick response, easy integration with other devices and the like.
The thin film sensor has high responsivity and fast response rate, and is widely applied to the fields of communication, military, fire alarm, aerospace and the like, but the development of the thin film sensor is restricted by low conversion efficiency and preparation complexity, so that more researches on materials, structural design of devices and system integration are required. In addition, in the solar thermoelectric device, a fixed heat flow is input into the device instead of a temperature difference, and the temperature distribution changes with factors such as the structure of the device and the environment where the device is located. In the Kraemer report (reference [ 1 ] Kraemer D, jee Q, Mcenaney K, et al. centralized solar thermal generators with a peak efficiency of 7.4% [ J ]. Nature Energy,2016,1.), a high performance solar block thermoelectric generator with light and heat aggregation is introduced. However, due to the difficulty of assembly, there have been few reports on the combination of the energy concentrating method and the thin film thermoelectric device. Thermal concentrator modules are typically attached to thermoelectric modules, and flexible thin film thermoelectric devices are difficult to fit due to limited contact area and poor mechanical properties. Although concentration of sunlight was attempted in the literature (ref [ 2 ] Mizoshiri M, Mikami M, Ozaki K, et al. thin-Film Thermoelectric Modules for Power Generation Using Focused Solar Light [ J ]. Journal of Electronic Materials,2012,41(6): 1713;) the amount of generated electricity of the fabricated thin Film Thermoelectric device was very low.
The basic physical principles of conventional photodetectors generally fall into two categories: photon effect and photothermal effect. The optical sensing device prepared according to the photon effect only has higher sensitivity in a partial wavelength range and always has noise; the photo-thermal effect based manufactured photo-sensing device has no selectivity to the light wavelength range in principle, but is widely used for detecting infrared rays and rarely used for detecting visible light due to high infrared ray absorption rate of materials.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a design and preparation method of a multifunctional high-density thermoelectric thin film power generation and light intensity sensing device with high output voltage, high responsiveness, high sensitivity, high accuracy, high reliability and wide response range.
The design and preparation method of the multifunctional high-density thermoelectric thin film power generation and light intensity sensing device specifically comprises the following implementation steps:
step one, preprocessing a substrate;
the pretreatment process is to clean the substrate through ultrasound and plasma to obtain the pretreated substrate so as to improve the adhesion and reliability of the substrate;
the substrate is made of glass, quartz, aluminum nitride, aluminum oxide, Polyimide (PI), polyethylene terephthalate or polydimethylsiloxane;
depositing an N-type thermoelectric thin film with a specified pattern on the pretreated substrate;
depositing and obtaining an N-type thermoelectric film with a specified pattern on a pretreated substrate by magnetron sputtering and photoetching-stripping micromachining processes, wherein the N-type thermoelectric film is N-type-Bi2Te3A base thermoelectric film of said N-Bi type2Te3The thickness of the base thermoelectric film is 1-20 μm;
step three, annealing the N-type thermoelectric film;
the annealing treatment specifically comprises the following steps: annealing the N-type thermoelectric film for 20-60 minutes at the temperature of 350-400 ℃ in a reducing atmosphere to obtain an annealed high-performance N-type thermoelectric film;
depositing a P-type thermoelectric thin film with a specified pattern on the pretreated substrate;
specifically, a P-type thermoelectric film with a specified pattern is obtained by deposition on a pretreated substrate through magnetron sputtering and photoetching-stripping micromachining processes, wherein the P-type thermoelectric film is P-Sb2Te3A base thermoelectric film of said P-type-Sb2Te3The thickness of the base thermoelectric film is 1-20 μm;
and the N-type thermoelectric arms in the N-type thermoelectric thin films and the P-type thermoelectric arms in the adjacent P-type thermoelectric thin films form a pair of thermocouples.
Depositing a copper/nickel electrode film on the pretreated substrate through magnetron sputtering and photoetching-stripping micromachining processes;
the copper/nickel electrode film deposition method specifically comprises the steps of preparing high-density and high-reliability electrode film patterns on a pretreated substrate through magnetron sputtering and photoetching-stripping micromachining processes, firstly preparing nickel layer patterns, sequentially connecting all thermoelectric arms, then preparing a copper layer on the nickel layer patterns, and forming the copper/nickel electrode film patterns by the nickel layer and the copper layer.
Pasting heat absorption films on the hot ends of all the thermocouples;
packaging the thermocouple, the copper/nickel electrode film and the heat absorption film by using a pouring sealant to form a thermoelectric device;
and step seven, assembling the thermoelectric device, the Fresnel lens, the heat dissipation structure and the shell to form the multifunctional high-density thermoelectric thin film power generation and light intensity sensing device.
The thermoelectric device is fixed on the upper surface of the heat dissipation structure and arranged below the Fresnel lens, so that light is focused into a focusing light spot with the size and the shape consistent with those of the heat absorption film after passing through the Fresnel lens.
The thermoelectric device is characterized in that a Fresnel lens is arranged above the shell to improve energy density through condensation, a focusing light spot of light passing through the Fresnel lens falls on a heat absorption film by adjusting the distance between the Fresnel lens and the heat absorption film on the thermoelectric device, a heat dissipation structure is arranged in the shell, and the thermoelectric device is fixed on the upper surface of the heat dissipation structure to realize establishment of large temperature difference of a cold end and a hot end of the thermoelectric thin film device. Under the action of illumination intensity, the temperature of the heat absorption film is increased, and the temperature of the hot end of the thermocouple is increased; according to the Seebeck effect principle, corresponding electromotive force can be generated between the hot end and the cold end to generate output voltage; meanwhile, the output voltage can be collected, the illumination intensity can be calculated according to the corresponding relation between the output voltage and the illumination intensity, and the function of converting the illumination intensity into the output voltage convenient to collect and measure is achieved.
The shape and the size of the focusing light spot are the same as those of the heat absorption film, and the shape and the size of the heat absorption film are the same as those of the hot end.
The invention has the advantages that:
1. the invention realizes the patterning processing of the high-density thermocouple and the electrode film in the miniaturized thermoelectric device by utilizing the photoetching-stripping micromachining process.
2. The invention is assisted by an annealing process, and realizes the improvement of the thermoelectric performance of the thermoelectric device material.
3. The thermoelectric device provided by the invention has the advantages that the temperature difference at two ends of the thermoelectric couple is improved, and the power generation efficiency and the output voltage of the thermoelectric device are greatly improved.
4. By carrying out light intensity sensing test on the thermoelectric device, the thermoelectric device has the characteristics of high output voltage, high responsivity, high sensitivity, high accuracy, high reliability and wide response range.
Drawings
FIG. 1 is a schematic structural view of a multifunctional high-density thermoelectric thin film and a light intensity sensor device according to the present invention;
FIG. 2 is a schematic diagram of a thermoelectric device according to the present invention;
FIG. 3 is a schematic diagram showing the positional relationship between a thermoelectric device and an electrode film according to the present invention;
FIG. 4 is a partial schematic view of a thermocouple in series with a copper/nickel electrode film in accordance with the present invention;
FIG. 5 is a schematic diagram of the voltage generated by a thermoelectric device of the present invention with/without illumination and the cold/hot side temperature as a function of time;
FIG. 6 is a graph showing the voltage generated by a thermoelectric device of the present invention as a function of time at different optical power densities;
FIG. 7 is a graph illustrating the relationship between the output voltage and different optical power densities of a thermoelectric device according to the present invention;
FIG. 8 is a diagram showing the variation of the output voltage with the optical power density generated by the thermoelectric device of the present invention under different illumination time.
In the figure:
1. a Fresnel lens; 2. A housing; 3. A thermoelectric device;
4. a heat dissipation structure; 5. A heat absorbing film; 6. A substrate;
7. a copper/nickel electrode film; 8. A P-type thermoelectric film; 9. An N-type thermoelectric film.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The invention provides a design and preparation method of a multifunctional high-density thermoelectric thin film power generation and light intensity sensing device, which realizes the mutual conversion of heat energy and electric energy by utilizing the carrier transport in a thermoelectric material solid, develops a compatible micromachining preparation method by designing a high-density thermoelectric thin film device, greatly improves the electric energy output, light intensity response and reliability of the device, thereby performing environmental heat energy collection power generation and active light intensity sensing, and realizing the dual functions of temperature difference power generation and signal sensing, wherein the prepared thermoelectric thin film power generation and light intensity sensing device has high output voltage, high responsivity, high sensitivity, high accuracy, high reliability and wide response range, and is prepared by the following specific steps:
step one, preprocessing a substrate;
the pretreatment process is to clean the substrate by ultrasound and plasma to obtain the pretreated substrate so as to improve the adhesion and reliability of the substrate. The surface of the pretreated substrate is smooth and flat, and the substrate is made of glass, quartz, aluminum nitride, aluminum oxide, Polyimide (PI), polyethylene terephthalate or polydimethylsiloxane; further preferably PI.
Depositing an N-type thermoelectric thin film with a specified pattern on the pretreated substrate;
the method comprises the steps of carrying out patterned high-density deposition on a pretreated substrate through magnetron sputtering and photoetching-stripping micromachining processes to obtain an N-type thermoelectric thin film with a specified pattern, wherein the N-type thermoelectric thin film is particularly preferably N-type-Bi2Te3A base thermoelectric film of said N-Bi type2Te3The thickness of the base thermoelectric thin film is 1 μm to 20 μm, and preferably 2 μm.
Step three, annealing the N-type thermoelectric film;
the annealing treatment specifically comprises the following steps: and annealing the N-type thermoelectric film for 20-60 minutes at the temperature of 350-400 ℃ in a reducing atmosphere to obtain the annealed high-performance N-type thermoelectric film, wherein the thermoelectric performance of the annealed N-type thermoelectric film is improved, and the reducing atmosphere is a mixed atmosphere of argon and hydrogen.
Depositing a P-type thermoelectric thin film with a specified pattern on the pretreated substrate;
the method comprises the steps of carrying out patterned high-density deposition on a pretreated substrate through magnetron sputtering and photoetching-stripping micromachining processes to obtain a P-type thermoelectric thin film with a specified pattern, wherein the P-type thermoelectric thin film is particularly preferably P-Sb2Te3A base thermoelectric film of said P-type-Sb2Te3The thickness of the base thermoelectric thin film is 1 μm to 20 μm, and preferably 2 μm.
And the N-type thermoelectric arms and the adjacent P-type thermoelectric arms in the N-type thermoelectric thin film form a pair of thermocouples.
Depositing an electrode film on the pretreated substrate through magnetron sputtering and photoetching-stripping micromachining processes; the deposited electrode film specifically comprises the following steps:
the preparation method comprises the steps of preparing high-density and high-reliability electrode film patterns on a pretreated substrate through magnetron sputtering and photoetching-stripping micromachining processes, firstly preparing nickel layer patterns, connecting thermoelectric arms in series, then preparing a copper layer on the nickel layer, forming a multilayer copper/nickel electrode film 7 by the nickel layer and the copper layer, enabling the nickel layer of the electrode film to be directly contacted with the thermoelectric arms of a thermocouple, reducing contact resistance and improving the binding force between the electrode film 7 patterns and the thermoelectric films.
The thickness of the copper/nickel electrode thin film 7 is larger than that of the P-type thermoelectric thin film, and is larger than that of the N-type thermoelectric thin film. Preferably, the thickness of the copper/nickel electrode thin film 7 is 3 μm, and the thickness of the P-type thermoelectric thin film and the thickness of the N-type thermoelectric thin film are both 2 μm.
As shown in fig. 2 and 3, the pattern of the P-type thermoelectric thin film 8 is a circular ring, the pattern of the N-type thermoelectric thin film 9 is also a circular ring, the thermoelectric arms of the P-type thermoelectric thin film 8 and the thermoelectric arms of the N-type thermoelectric thin film 9 are alternated at the circumferential position of the circular ring surface to form a circular ring-shaped thermocouple pattern, as shown in fig. 4, and all the thermoelectric arms are connected in series through the pattern of the copper/nickel electrode thin film 7.
And step six, pasting heat absorption films or heat absorption sheets on the hot ends of all the thermocouples, and packaging the thermocouples, the electrode thin film 7 and the heat absorption films 5 by using pouring sealant to form the thermoelectric device.
As shown in fig. 2, a heat absorbing film 5 is adhered to the hot end of the thermoelectric device 3, wherein the inner ring of the circular pattern is the hot end, the outer ring is the cold end, the heat absorbing film 5 is circular and is adhered to an electrode thin film 7 at the hot end, so as to convert the illumination intensity gathered on the heat absorbing film 5 into temperature.
The material of the pouring sealant can be Polydimethylsiloxane (PDMS), and Kenseer can be specifically adopted in the embodiment of the inventionTMAnd (5) pouring the sealant in the SE 901.
The heat absorption film 5 adopts a Bo-siphon thermal film of Bo of Sichuan Kangbo.
And step seven, assembling the thermoelectric device, the Fresnel lens, the heat dissipation structure and the shell to form the multifunctional high-density thermoelectric thin film power generation and light intensity sensing device.
As shown in fig. 1, a fresnel lens 1 is disposed above the housing 2, a heat dissipation structure 4 is disposed inside the housing 2, and the thermoelectric device 3 is located on an upper surface of the heat dissipation structure 4. By adjusting the distance between the Fresnel lens 1 and the heat absorption film 5 on the thermoelectric device 3, the focused light spot of the light passing through the Fresnel lens 1 falls on the heat absorption film 5.
The middle of the surface of the heat dissipation structure 4 is provided with a groove, the groove is designed according to the shape of the cold end, the groove is matched with the pattern of the thermoelectric device 3, when the thermoelectric device 3 is arranged on the heat dissipation structure 4, only the cold end of the thermocouple at the edge of the thermoelectric device 3 is contacted with the heat dissipation structure 4, and all the thermocouples and the hot ends of the thermocouples are positioned in the groove and are not contacted with the heat dissipation structure 4, so that the temperature difference between the cold end and the hot end is increased.
Further, the heat dissipation structure 4 is a copper block.
In the using process, the multifunctional thermoelectric thin film power generation and light intensity sensing device is exposed to the illumination condition, the focused light spot of light passing through the Fresnel lens 1 falls on the heat absorption film 5, the size and the shape of the focused light spot are the same as those of the heat absorption film 5, and the focused light spot is circular in the embodiment and is the same as that of the circular heat absorption film 5. Under the action of illumination intensity, the temperature of the heat absorption film 5 (hot end) is increased, and the temperature of the hot end of the thermocouple is increased; according to the Seebeck effect principle, corresponding electromotive force can be generated between the hot end and the cold end, so that output voltage is generated, and the power generation function is achieved; meanwhile, the output voltage can be collected, the illumination intensity can be calculated according to the corresponding relation between the output voltage and the illumination intensity, the light intensity sensing function is achieved, and the illumination intensity is converted into the output voltage convenient to collect and measure. As shown in fig. 3, the cold end is a pattern structure of the edge electrode thin film 7 of the thermoelectric device 3, and the illumination intensity and the highest stable temperature are in one-to-one correspondence.
The theoretical output voltage V of the multifunctional high-density thermoelectric film power generation and light intensity sensing deviceCThe following formula is satisfied:
VC＝n×(Sp-type-Sn-type)×ΔT
wherein n in the formula is the logarithm of the thermocouple, Sp-typeAnd Sn-typeThe Seebeck coefficients of the P-type thermoelectric film and the N-type thermoelectric film are respectively, and delta T is the temperature difference between the cold end and the hot end.It can be seen that the Seebel coefficient S of the P-type thermoelectric thin film and the N-type thermoelectric thin film is improved by increasing the logarithm of the thermocouple Np-typeAnd Sn-typeAnd increasing the temperature difference Δ T between the cold and hot sides can be used to increase the theoretical output voltage VC. By adopting the photoetching-stripping micromachining process, compared with the method of printing, masking and the like which are generally adopted at present, the density of the thermocouples is much higher, namely the number of patterns of the P-type thermoelectric thin film and the N-type thermoelectric thin film on the unit area of the preprocessed substrate is more.
In the invention, firstly, a micro thin film pattern is prepared by adopting the micro-processing technology of photoetching, the logarithm of the thermocouple is increased, and the high-density thermocouple is realized; secondly, the performance of the thermoelectric material is improved by an annealing method so as to improve the Seebeck coefficients of the P-type thermoelectric thin film and the N-type thermoelectric thin film; finally, the heat absorption film 5 is introduced to absorb the gathered light intensity, so that the heat absorption capacity of the hot end is greatly improved; and introducing a Fresnel lens as a light condensing part to condense the light. The copper block with the groove in the middle is introduced to serve as a heat dissipation structure of the thermoelectric device, only the cold end is cooled, the temperature of the cold end is reduced, and the temperature difference between the two ends of the thermocouple is improved.
In addition, the sensing performance of the optical sensing device is mainly determined by the thermal diffusion of the thermoelectric device, so that the thermoelectric performance in the sensing device can be regulated and controlled by selecting substrates with different materials and thicknesses, and the responsiveness of the device and the sensing performance of the response rate can be adjusted. The device is deposited on the substrate with different materials and thicknesses, so that the flexibility-hardness conversion of the thin film device is realized, and the performance of the sensor is regulated and controlled.
FIG. 5 is a schematic diagram showing the change of the voltage generated by the thermoelectric device of the present invention and the temperature of the cold/hot terminals with time in the presence/absence of illumination when light is applied (optical power density of 80 mV/cm)2) The voltage generated by the thermoelectric device increases rapidly and then rises gradually, and finally remains stable. The maximum stable output voltage is about 995 mV; when the light is removed, the voltage drops suddenly and then slowly approaches zero. The periodic variation with/without illumination also results in a periodic variation of the output voltage and after a few cycles no variationAny deterioration occurred; the cold/hot end temperature is also periodically varied over time.
As shown in fig. 6, which is a schematic diagram of the voltage variation with time generated by the thermoelectric device of the present invention under different optical power densities, when there is illumination, the voltage increases rapidly and then gradually rises to a stable value, and can be kept stable for 10 minutes; and the voltage increases with increasing optical power density.
It can be known from the combination of fig. 5 and fig. 6 that the optical sensor of the thin film thermoelectric device prepared by the present invention has high sensitivity, high accuracy, high reliability and periodicity.
FIG. 7 is a graph showing the relationship between the output voltage and different optical power densities of the thermoelectric device of the present invention, responsivity (R)S) Is a key parameter for evaluating the performance of the sensor and is composed of
Given by VOPIs the output voltage, G is the incident optical power,
is the active area. In the device structure of the present invention, the size of the heat absorption region is the same, so R can be set to be RS＝VOPthe/G is defined as the responsivity. As can be seen in fig. 7: the stable output voltage and the optical power density show a strong linear relation, and the responsivity of the linear relation is obtained through linear fitting and reaches 12.5Vcm2Ultrahigh value of/W. In particular, the stable output voltage was calculated to reach 1.25V under a standard sunlight condition, indicating a high responsivity in photodetection.
Fig. 8 is a schematic diagram showing the variation of the output voltage generated by the thermoelectric device of the present invention with the optical power density under different illumination times, and table 1 below is a table showing the results of linear fitting performed by fig. 7 and 8.
TABLE 1 table of results of linear fitting
As can be seen from table 1, the output voltage increases with increasing test time. However, at the beginning, the degree of fitting is not yet high enough (R)2< 0.99), the output voltage and time curves show a perfect linear fit (R) when the time is longer than 10s2> 0.999). Table 1 shows the optical power density at 20mW/cm2Calculated and measured values of the output voltage. The thermoelectric device has high output voltage (tens of millivolts) under relatively low light intensity, and the measurement error is about 5 percent (t is 10s), and the optical power density can be accurately measured when the measurement time exceeds 10 s.
In addition, in the test process, light is converted into heat through the heat absorption film, and then output voltage is generated through the Seebeck effect; the heat absorption film is not selective to the wavelength range of light, and thus has a wide response range compared to a conventional thermoelectric device based on the photoelectric effect.
The invention not only improves the power generation efficiency of the thermoelectric film power generation and the light intensity sensing device, but also creatively applies the thermoelectric effect to the light intensity detection field; by introducing the heat absorption film and the light condensation structure, the temperature difference between two ends of a thermocouple on the thermoelectric device is increased, the structure of the device is optimized, and the output voltage is greatly enhanced; tests prove that the thermoelectric conversion efficiency of the obtained thermoelectric thin film power generation and light intensity sensing device is greatly improved; the sensor has the characteristics of high output voltage, high responsivity, high sensitivity, high accuracy, high reliability and wide response range. The method has great application potential in the fields of micro-energy collection and sensing such as environmental monitoring.
From the above description of the invention, it is readily understood that numerous variations of the embodiments of the present invention are possible. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be readily understood by one skilled in the art are intended to be included within the scope of the following claims.
Claims (3)
1. A multifunctional thermoelectric thin film power generation and light intensity sensing device preparation method utilizes carrier transport in thermoelectric material solid to realize mutual conversion of heat energy and electric energy, and improves electric energy output, light intensity response and reliability of the thermoelectric device by designing a high-density thermoelectric device and adopting a photoetching-stripping micromachining process, thereby carrying out environmental heat energy collection power generation and active light intensity sensing and realizing dual functions of temperature difference power generation and signal sensing, and the preparation method specifically comprises the following steps:
step one, preprocessing a substrate;
depositing an N-type thermoelectric film with a specified pattern on the pretreated substrate through a photoetching-stripping micromachining process;
step three, annealing the N-type thermoelectric film;
depositing a P-type thermoelectric film with a specified pattern on the pretreated substrate through a photoetching-stripping micromachining process;
an N-type thermoelectric arm in the N-type thermoelectric film and a P-type thermoelectric arm in an adjacent P-type thermoelectric film form a thermocouple;
depositing a copper/nickel electrode film on the pretreated substrate through a photoetching-stripping micromachining process;
firstly, preparing a nickel layer pattern, connecting thermoelectric arms in a thermocouple in series, and then preparing a copper layer on the nickel layer pattern, wherein the nickel layer and the copper layer form a multi-layer copper/nickel electrode film pattern;
sixthly, pasting heat absorption films on the hot ends of all the thermocouples;
packaging the thermocouple, the electrode thin film and the heat absorption film by using a pouring sealant to form a thermoelectric device;
assembling the thermoelectric device, the Fresnel lens, the heat dissipation structure and the shell to form a multifunctional thermoelectric film power generation and light intensity sensing device;
a Fresnel lens is fixed above the shell, a focusing light spot of light passing through the Fresnel lens falls on a heat absorption film by adjusting the distance between the Fresnel lens and the heat absorption film on the thermoelectric device, a heat dissipation structure is arranged in the shell, and the thermoelectric device is fixed on the upper surface of the heat dissipation structure;
the middle of the surface of the heat dissipation structure is provided with a groove, the groove is matched with the pattern of the thermoelectric device, when the thermoelectric device is arranged on the heat dissipation structure, only the cold end of the edge of the thermoelectric device is contacted with the heat dissipation structure, and the hot end and the thermocouple part are not contacted with the heat dissipation structure;
the method is characterized in that:
in the step one, the pretreatment is to clean the substrate through ultrasound and plasma to obtain the pretreated substrate;
the substrate is made of glass, quartz, aluminum nitride, aluminum oxide, polyimide, polyethylene terephthalate or polydimethylsiloxane;
in the second step, the N-type thermoelectric film is N-Bi2Te3A base thermoelectric film of said N-Bi type2Te3The thickness of the base thermoelectric film is 1-20 μm;
in the third step, the annealing treatment is specifically to anneal the N-type thermoelectric film for 20-60 minutes at the temperature of 350-400 ℃ in a reducing atmosphere to obtain the annealed N-type thermoelectric film;
in the fourth step, the P-type thermoelectric film is P-Sb2Te3A base thermoelectric film of said P-type-Sb2Te3The thickness of the base thermoelectric film is 1-20 μm;
and fifthly, the thermoelectric arms of the P-type thermoelectric thin film and the thermoelectric arms of the N-type thermoelectric thin film are alternated at the circumferential position of the circular ring surface to form a circular ring-shaped thermocouple pattern, and all the thermoelectric arms are connected in series through the copper/nickel electrode thin film pattern.
2. The method for manufacturing a multifunctional thermoelectric thin film power generation and light intensity sensing device as claimed in claim 1, wherein in the fifth step, the thickness of the copper/nickel electrode thin film is greater than that of the P-type thermoelectric thin film, and is greater than that of the N-type thermoelectric thin film.
3. The method for preparing a multifunctional thermoelectric thin film power generation and light intensity sensing device as claimed in claim 1, wherein: and fifthly, the thickness of the copper/nickel electrode film prepared in the step five is 3 micrometers, and the thickness of the P-type thermoelectric film and the thickness of the N-type thermoelectric film are both 2 micrometers.
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| CN114122540B (en) * | 2021-11-15 | 2023-06-13 | 电子科技大学 | Temperature detector, preparation method thereof and lithium battery structure combination |
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