CN112510142B - Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof - Google Patents
Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof Download PDFInfo
- Publication number
- CN112510142B CN112510142B CN202110158417.0A CN202110158417A CN112510142B CN 112510142 B CN112510142 B CN 112510142B CN 202110158417 A CN202110158417 A CN 202110158417A CN 112510142 B CN112510142 B CN 112510142B
- Authority
- CN
- China
- Prior art keywords
- layer
- thin film
- boron
- alkene
- photothermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a photothermal-electric conversion thin film device and a preparation method thereof, and relates to the field of a boron-alkene-based photothermal-electric conversion thin film device and a preparation method thereof2Te3Or Sb2Te3(ii) a The thermoelectric generation layer forms a temperature gradient in the thickness direction to generate a potential difference. The boron alkene is taken as a plasmon material for intrinsic broadband absorption, the two-dimensional structure of the boron alkene is easy to assemble and process, and the boron alkene is an ideal photo-thermal conversion material. The problems of high processing difficulty and high cost of the wide-spectrum photo-thermal conversion device are solved.
Description
Technical Field
The invention designs a photothermal-electric conversion thin film device and a preparation method thereof, in particular to a boron-alkene-based photothermal-electric conversion thin film device and a preparation method thereof.
Background
A photothermal detector is a detector based on two fundamental energy conversion processes of photothermal conversion and thermoelectric conversion. When light is irradiated on one end of the thermoelectric material, light energy is first converted into heat energy through photo-thermal conversion, thereby establishing a temperature difference (Δ T) across the thermoelectric material. Driven by the temperature difference, the carriers can diffuse to the cold end (i.e. the Seebeck effect in thermoelectric conversion), and an electric potential difference is established between the two ends of the material. The photothermal detector has the advantages of self power supply, no refrigeration, wide response wavelength range and the like, and has important application prospect in military and civil fields such as optical detection, infrared thermal imaging, temperature monitoring and the like. The responsivity of the photo-thermal detector is proportional to the Seebeck coefficient (S) of the material and the Δ T across the material. In the photothermographic detector that has been commercialized at present, p-type and n-type thermoelectric films constitute a thermoelectric pair, and a plurality of thermoelectric units constitute a thermoelectric stack around an absorption layer. The absorption layer absorbs light and generates heat, and a temperature difference is generated on two sides of the thermopile, so that voltage response is generated.
The multilayer composite material formed by the material with high photothermal conversion capability and the traditional thermoelectric material realizes high-efficiency photothermal conversion, and is one of the main targets of the current research on high-performance photothermal devices. In recent years, photothermal conversion thin films based on metamaterials, which are artificial structural materials composed of sub-wavelength unit arrays and have excellent electromagnetic properties, have been widely researched and developed in many fields. The metamaterial wave-absorbing material can be generally divided into a narrow-band light-absorbing material and a wide-band light-absorbing material. The narrow-band metamaterial mainly depends on a resonance structure interacted with light with a specific frequency, and the broadband metamaterial depends on a structure with the electromagnetic response independent of the frequency, so that the light absorption characteristic of a wide band is realized.
At present, a wide-spectrum photothermal conversion device is mainly of a metal micro-nano structure, and the inherent defect of narrow-band absorption of the wide-spectrum photothermal conversion device is overcome through the optical coupling effect between plasmon micro-nano structures. However, the complex metal nanostructure has great processing difficulty and high cost, so that the practical application thereof is greatly limited. Compared with the traditional metal material, the two-dimensional material surface plasmon represented by graphene and black phosphorus has excellent performances of high optical field compression, easy tuning and the like, but the resonance frequency of the two-dimensional material surface plasmon is low due to limited carrier concentration, and the two-dimensional material surface plasmon can only occur in the middle infrared to terahertz wave bands. In recent years, a new two-dimensional material, borolene, has received much attention from researchers. Boron is a neighboring element of carbon and has chemical similarity with carbon, but the special electronic structure (valence electron number is 3, and valence electron layer cannot be filled in bonding time) enables boron to have shorter covalent bond radius and rich valence state, and diversified structure and unique property. Bulk boron is non-metallic, but theory predicts that boronenes are metallic, with the arrangement of vacancies in their triangular lattice leading to anisotropic and diverse electronic properties. More importantly, theoretical calculation results show that the boron alkene has higher intrinsic carrier concentration and plasmon resonance frequency than the graphene, and can excite surface plasmons in a visible near-infrared band. The boron alkene is taken as a plasmon material for intrinsic broadband absorption, the two-dimensional structure of the boron alkene is easy to assemble and process, and the boron alkene is an ideal photo-thermal conversion material.
Disclosure of Invention
The invention provides a boron alkene-based photo-thermal-electric conversion thin-film device and a preparation method thereof, and solves the problems of high processing difficulty and high cost of a wide-spectrum photo-thermal conversion device.
The invention adopts the following technical scheme that the photothermal-electric conversion thin film device based on the boron alkene and the preparation method thereof comprise the following steps:
the thermoelectric generation layer, be located the light absorption layer of thermoelectric generation layer one side, and be located the heat dissipation layer of thermoelectric generation layer opposite side, the light absorption layer comprises boron alkene film, and the thermoelectric generation layer is Bi2Te3Or Sb2Te3(ii) a The thermoelectric generation layer forms a temperature gradient in the thickness direction, and generates a potential difference by a thermoelectric effect.
Further, the light absorbing layer and the thermoelectric generation layer have a heat conductive layer therebetween.
Further, the heat conductive layer is a thin film material of gold, silver, copper, silicon, boron nitride, graphite, Polyimide (PI), or polyethylene terephthalate (PET).
Further, the heat dissipation layer is a thin film structure with heat dissipation channels or a heat dissipation coating with enhanced heat dissipation function, and is made of a material such as copper, graphene or boron nitride.
Further, the light absorbing layer has periodic nanostructures increasing surface area and light absorption rate, the periodic nanostructures being wave-shaped, square-shaped, or triangular-shaped.
A method for preparing a boron alkene-based photo-thermal-electric conversion thin-film device,
step 1) selecting the area of 0.25cm2To 25cm2Bi of 1 to 200 μm thickness2Te3Or Sb2Te3The thin film material is used as a thermoelectric generation layer. Gold, silver, copper, silicon or boron nitride, graphene, Polyimide (PI), polyethylene terephthalate (PET) is evaporated on the surface of one side to form a heat conductive layer having a thickness of 50nm to 10 μm. The other side of the thermoelectric generation layer is compounded with the heat dissipation layer;
step 2) proportioning a boron alkene nano material dispersion liquid with the concentration of 0.1mg/mL to 10.0mg/mL, and then uniformly coating the boron alkene nano material dispersion liquid on the surface of the film with the heat conduction layer;
and 3) writing the periodic nanostructure of the boron-containing alkene film by femtosecond laser etching or ultraviolet exposure to form a light absorption layer.
Compared with the prior art, the photothermal-electric conversion thin film device based on the boron alkene and the preparation method thereof have the beneficial effects that:
(1) the processing is simple, and the two-dimensional structure is easy to assemble.
(2) Can realize the manufacture of ultrathin photothermal-electric conversion thin-film devices of micron or even submicron level.
Drawings
FIG. 1 is a schematic diagram of a square wave-shaped structure of a boron-ene based photothermal-electric conversion thin film device of the present invention;
FIG. 2 is a high resolution transmission electron microscope image of a borolene material in a square waveform structure of a borolene-based photothermal-electrical conversion thin film device of the present invention;
FIG. 3 is a transmission electron microscopy energy spectrum of a borolene material with a square waveform structure of a borolene-based photothermal-electrical conversion thin-film device according to the present invention;
FIG. 4 is a schematic diagram of a full-solar spectrum test of a borolene based photothermal-to-electrical conversion thin film device of the present invention;
FIG. 5 is a graph showing the test of the photothermal conversion performance of the boron-ene based photothermal-electric conversion thin film device of the present invention in a square waveform configuration;
FIG. 6 is a schematic illustration of the waved structure of a borolene based photothermal-to-electrical conversion thin film device of the present invention;
FIG. 7 is a high resolution transmission electron microscope image of the waved structure of a boron-ene based photothermal-electric conversion thin film device of the present invention;
FIG. 8 is a diagram showing a test of photothermal conversion performance of a waved structure of a boron-ene-based photothermal-electric conversion thin film device according to the present invention;
FIG. 9 is a schematic representation of a delta-waveform structure for a boron-ene based photothermal-to-electrical conversion thin film device of the present invention;
FIG. 10 is a high resolution transmission electron microscope image of a triangular waveform configuration of a boracene-based photothermal-to-electrical conversion thin film device of the present invention;
FIG. 11 is a diagram illustrating the photo-thermal conversion performance of a triangular waveform structure of a boron-ene-based photo-thermal-electric conversion thin-film device according to the present invention;
wherein: 1: light absorbing layer, 2: thermoelectric generation layer, 3: heat dissipation layer, 4: a thermally conductive layer.
Detailed Description
The following detailed description of the specific implementation steps is provided in conjunction with the accompanying drawings:
example one
As shown in fig. 1, the present invention is an embodiment of a boron-alkene-based photothermal-to-electrical conversion thin film device and a method for manufacturing the same, and the device is manufactured by the following method:
step 1) selecting the area of 0.25cm2Bi of 1 μm thickness2Te3The material was used as a thermoelectric generation layer (purchased from Sigma-Aldrich, cat # and Specification: 733482-5G). And gold is evaporated on the surface of one side to form a heat conduction layer, and the thickness of the heat conduction layer is 50 nm. The other side of the thermoelectric generation layer is bonded with a heat dissipation layer by adopting heat-conducting silica gel, and the heat dissipation layer is made of 50 mu m copper;
step 2) proportioning a boron alkene nano material dispersion liquid with the concentration of 0.1mg/mL, and then uniformly coating the boron alkene nano material dispersion liquid on the surface of the film with the heat conduction layer; as shown in fig. 2, the transmission electron microscopy image shows an ultrathin nanosheet structure and clear lattice fringes, reflecting the good crystalline properties of the borolene nanomaterial. As shown in FIG. 3, it can be seen that the boron element is uniformly distributed throughout the entire flake, and the shell layer is observed to be composed of C and O elements. The presence of small amounts of C and O may be due to surface contamination by exposure to air and carbon films;
and 3) writing the periodic nanostructure of the boron-containing alkene film by femtosecond laser etching or ultraviolet exposure to form a light absorption layer.
As shown in fig. 1, the resulting photothermal-to-electrical conversion thin film device includes: the temperature difference power generation layer, the light absorption layer positioned on one side of the temperature difference power generation layer and the heat dissipation layer positioned on the other side of the temperature difference power generation layer are arranged, and the light absorption layer is formed by a boron-olefin film with a periodic nano structure and is in a square waveform, so that the surface area and the light absorption rate are increased; the thermoelectric generation layer forms a temperature gradient in the thickness direction to generate a potential difference.
The thermally conductive layer in some embodiments may also be coated with silver, copper, silicon, or a thin film material of boron nitride, graphite, Polyimide (PI), or polyethylene terephthalate (PET), with the same or similar effect.
The conversion performance test of the photothermal-electric conversion thin film device was performed according to the test method shown in fig. 4. The photothermal conversion capability of the device is monitored by using an infrared thermometer (professional 890, de Testo corporation), under the infrared illumination condition with the wavelength of 980 nm, when the illumination power reaches 100 mW, the temperature of the device can reach 165 ℃ (as shown in FIG. 5), and the current value which can be output by the device at this time is 0.12 mA.
Example two
As shown in fig. 6, the present invention is an embodiment of a boron alkene-based photothermal-electric conversion thin film device and a method for manufacturing the same, and the device is manufactured by the following method:
step 1) selecting a 25cm area2Sb having a thickness of 15 μm2Te3The thin film material was used as a thermoelectric layer (purchased from Sigma-Aldrich, cat # and Specification: 733490-1G). Silver is evaporated on the surface of one side to form a heat conducting layer, the thickness of which is 10 μm. The other side of the thermoelectric generation layer is bonded with a heat dissipation layer by adopting heat-conducting silica gel, and the heat dissipation layer is graphene with the thickness of 1 mu m;
step 2) proportioning a boron alkene nano material dispersion liquid with the concentration of 1.0mg/mL, and then uniformly coating the boron alkene nano material dispersion liquid on the surface of the film with the heat conduction layer; as shown in fig. 7, it can be seen that boron alkene nanoplatelets form a small amount of aggregates, but still have good crystalline properties;
and 3) writing the periodic nano array structure of the boron-alkene film by femtosecond laser etching or ultraviolet exposure to form a light absorption layer.
As shown in fig. 6, the resulting photothermal-to-electrical conversion thin film device includes: the solar cell comprises a temperature difference power generation layer, a light absorption layer and a heat dissipation layer, wherein the light absorption layer is positioned on one side of the temperature difference power generation layer, the heat dissipation layer is positioned on the other side of the temperature difference power generation layer, and the light absorption layer is formed by a boron-olefin film with a periodic nano structure, is wavy and increases the surface area and the light absorption rate; the thermoelectric generation layer forms a temperature gradient in the thickness direction to generate a potential difference.
The conversion performance test of the photothermal-electric conversion thin film device was performed according to the test method shown in fig. 4. The photothermal conversion capability of the device is monitored by using an infrared thermometer (professional 890, de tegos), under the infrared illumination condition with the wavelength of 980 nm, when the illumination power reaches 100 mW, the temperature of the device can reach 161 ℃ (as shown in FIG. 8), and the current value which can be output by the device at this time is 0.11 mA.
EXAMPLE III
As shown in fig. 9, the present invention is an embodiment of a boron alkene-based photothermal-electric conversion thin film device and a method for manufacturing the same, and the device is manufactured by the following method:
step 1) selecting a 25cm area2Sb of 200 μm thickness2Te3The thin film material was used as a thermoelectric layer (purchased from Sigma-Aldrich, cat # and Specification: 733490-1G). One side of the thermoelectric generation layer is bonded with a heat dissipation layer by adopting heat-conducting silica gel, and the heat dissipation layer is 16 mu m of boron nitride;
step 2), proportioning a boron-alkene nano material dispersion liquid with the concentration of 10.0mg/mL, and then uniformly coating the boron-alkene nano material dispersion liquid on the other side of the thermoelectric generation layer; as shown in fig. 10, it can be seen that the lateral size distribution of the dispersed boron-containing alkene nanomaterial sheet is uniform, approximately between 8 and 30 nm;
and 3) writing the periodic nano array structure of the boron-alkene film by femtosecond laser etching or ultraviolet exposure to form a light absorption layer.
As shown in fig. 9, the resulting photothermal-to-electrical conversion thin film device includes: the solar cell comprises a temperature difference power generation layer, a light absorption layer and a heat dissipation layer, wherein the light absorption layer is positioned on one side of the temperature difference power generation layer, the heat dissipation layer is positioned on the other side of the temperature difference power generation layer, and the light absorption layer is formed by a boron-olefin film with a periodic nano structure and is in a triangular waveform, so that the surface area and the light absorption rate are increased; the thermoelectric generation layer forms a temperature gradient in the thickness direction to generate a potential difference.
The conversion performance test of the photothermal-electric conversion thin film device was performed according to the test method shown in fig. 4. The photothermal conversion capability of the device is monitored by using an infrared thermometer (professional 890, de tegos), under the infrared illumination condition with the wavelength of 980 nm, when the illumination power reaches 100 mW, the temperature of the device can reach 150 ℃ (as shown in FIG. 11), and the current value which can be output by the device at this time is 0.08 mA.
Claims (5)
1. A borolene-based photothermal-to-electrical conversion thin film device, comprising:
the solar cell comprises a thermoelectric generation layer, a light absorption layer and a heat dissipation layer, wherein the light absorption layer is positioned on one side of the thermoelectric generation layer, the heat dissipation layer is positioned on the other side of the thermoelectric generation layer, the light absorption layer is composed of a boron-alkene film, the light absorption layer is provided with a periodic nano structure for increasing the surface area and the light absorption rate, and the periodic nano structure is in a wave shape, a square wave shape or a triangular wave shape; the thermoelectric generation layer is Bi2Te3Or Sb2Te3(ii) a The thermoelectric generation layer forms a temperature gradient in the thickness direction, and generates a potential difference through a thermoelectric effect.
2. The photothermal-to-electric conversion thin film device according to claim 1, wherein a heat conductive layer is provided between the light absorbing layer and the thermoelectric generation layer.
3. The photothermal electric conversion thin film device according to claim 2, wherein the heat conductive layer is a thin film material of gold, silver, copper, silicon, boron nitride, graphene, Polyimide (PI), or polyethylene terephthalate (PET).
4. The photothermal-to-electrical conversion thin film device according to claim 1, wherein the heat dissipation layer is a thin film structure having heat dissipation channels or a heat dissipation coating having a function of enhancing heat dissipation.
5. A preparation method of a boron alkene-based photo-thermal-electric conversion thin film device is characterized in that,
step 1) selecting the area of 0.25cm2To 25cm2Bi of 1 to 200 μm thickness2Te3Or Sb2Te3The thin film material is used as a thermoelectric generation layer; evaporating gold, silver, copper, silicon or coating boron nitride, graphene, Polyimide (PI), polyethylene terephthalate (PET) on the surface of one side to form a heat conducting layer, wherein the thickness of the heat conducting layer is 50nm to 10 microns; the other side of the thermoelectric generation layer is compounded with the heat dissipation layer;
step 2) proportioning a boron alkene nano material dispersion liquid with the concentration of 0.1mg/mL to 10.0mg/mL, and then uniformly coating the boron alkene nano material dispersion liquid on the surface of the film with the heat conduction layer;
and 3) writing the periodic nanostructure of the boron-containing alkene film by femtosecond laser etching or ultraviolet exposure to form a light absorption layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110158417.0A CN112510142B (en) | 2021-02-05 | 2021-02-05 | Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110158417.0A CN112510142B (en) | 2021-02-05 | 2021-02-05 | Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112510142A CN112510142A (en) | 2021-03-16 |
| CN112510142B true CN112510142B (en) | 2021-05-04 |
Family
ID=74952659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110158417.0A Active CN112510142B (en) | 2021-02-05 | 2021-02-05 | Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112510142B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115340103B (en) * | 2022-09-01 | 2023-08-22 | 安徽大学 | Flexible electrode with micro-nano topological structure derived from borane-bismuth alkene, preparation method and application thereof |
| CN117156940B (en) * | 2023-10-30 | 2024-01-09 | 北京中育神州数据科技有限公司 | Method for optimizing thermoelectric performance by utilizing heterogeneous thermoelectric material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107917754A (en) * | 2016-10-09 | 2018-04-17 | 深圳市彩煌实业发展有限公司 | Thermoelectric (al) type laser power probe and preparation method thereof |
| CN108599622A (en) * | 2018-05-09 | 2018-09-28 | 中国矿业大学 | A kind of temperature difference electricity generation device of efficient absorption solar energy |
| CN109087989A (en) * | 2018-07-24 | 2018-12-25 | 北京航空航天大学 | A kind of preparation method of Multifunction thermoelectric film power generation and light intensity sensor part |
-
2021
- 2021-02-05 CN CN202110158417.0A patent/CN112510142B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107917754A (en) * | 2016-10-09 | 2018-04-17 | 深圳市彩煌实业发展有限公司 | Thermoelectric (al) type laser power probe and preparation method thereof |
| CN108599622A (en) * | 2018-05-09 | 2018-09-28 | 中国矿业大学 | A kind of temperature difference electricity generation device of efficient absorption solar energy |
| CN109087989A (en) * | 2018-07-24 | 2018-12-25 | 北京航空航天大学 | A kind of preparation method of Multifunction thermoelectric film power generation and light intensity sensor part |
Non-Patent Citations (1)
| Title |
|---|
| Two-Dimensional Borophene: Properties, Fabrication, and Promising Applications;Zhongjian Xie et al;《Research》;20200615;正文第2-6页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112510142A (en) | 2021-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Transforming heat transfer with thermal metamaterials and devices | |
| He et al. | A flexible photo-thermoelectric nanogenerator based on MoS2/PU photothermal layer for infrared light harvesting | |
| Xia et al. | Thermoelectric generator using space cold source | |
| CN112510142B (en) | Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof | |
| Liu et al. | Multiband and broadband absorption enhancement of monolayer graphene at optical frequencies from multiple magnetic dipole resonances in metamaterials | |
| Sun et al. | Flexible mid-infrared radiation modulator with multilayer graphene thin film by ionic liquid gating | |
| CN101313404B (en) | Apparatus and methods for solar energy conversion using nanoscale cometal structures | |
| US9263660B2 (en) | Generator | |
| Wang et al. | Anisotropic optical properties of silicon nanowire arrays based on the effective medium approximation | |
| Feng et al. | Quasi-industrially produced large-area microscale graphene flakes assembled film with extremely high thermoelectric power factor | |
| US20130081693A1 (en) | Surface plasmon energy conversion device | |
| Singh et al. | Photothermal and Joule-heating-induced negative-photoconductivity-based ultraresponsive and near-zero-biased copper selenide photodetectors | |
| Cao et al. | Thermoelectric effect across the metal− insulator domain walls in VO2 microbeams | |
| Wang et al. | Two-dimensional materials applied for room-temperature thermoelectric photodetectors | |
| Ren et al. | Terahertz dynamics of quantum-confined electrons in carbon nanomaterials | |
| Xia et al. | A solar thermoelectric conversion material based on Bi2Te3 and carbon nanotube composites | |
| Jiang et al. | Theoretical study of multilayer ring metamaterial emitter for a low bandgap TPV cell | |
| Picardi et al. | Dynamic modulation of thermal emission—a tutorial | |
| Gu et al. | Large-area, flexible, and dual-source co-evaporated Cs3Cu2I5 nanolayer to construct ultra-broadband photothermoelectric detector from visible to terahertz | |
| Zhang et al. | Coupling enhancement of photo-thermoelectric conversion in a lateral ZnO nanowire array | |
| Yang et al. | Broad tunable nanoantenna based on graphene log-periodic toothed structure | |
| Liu et al. | High-performance ultrabroadband photodetector based on photothermoelectric effect | |
| Xia et al. | Excitation of surface plasmons in graphene-coated nanowire arrays | |
| TWI473309B (en) | Thermoelectric power generation apparatus | |
| Akram et al. | Ultra-low thermal conductivity and thermoelectric properties of polymer-mixed Bi 2 Te 3 nanofibers by electrospinning |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221128 Address after: Floor 19, Building C, Optoelectronic Science Park, No. 6, Yuhe North Road, Yanchuang Park, Jiangbei New District, Nanjing, Jiangsu 211899 Patentee after: Nanjing Kenai Laser Technology Co.,Ltd. Address before: 210058 no.5-934, Longtan logistics base, No.1 Shugang Road, Longtan street, Qixia District, Nanjing City, Jiangsu Province Patentee before: Nanjing zhuoyongchuang Photoelectric Technology Co.,Ltd. |