TWI473309B - Thermoelectric power generation apparatus - Google Patents

Thermoelectric power generation apparatus Download PDF

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TWI473309B
TWI473309B TW98106494A TW98106494A TWI473309B TW I473309 B TWI473309 B TW I473309B TW 98106494 A TW98106494 A TW 98106494A TW 98106494 A TW98106494 A TW 98106494A TW I473309 B TWI473309 B TW I473309B
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thermoelectric
carbon nanotube
heat
generation device
conversion device
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TW98106494A
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TW201032365A (en
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Peng Liu
Wen-Mei Zhao
Li Qian
Liang Liu
Pi-Jin Chen
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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Description

熱電發電裝置 Thermoelectric generator

本發明涉及一種熱電發電裝置。 The present invention relates to a thermoelectric generation device.

能源問題係當代人類社會發展面臨之重大問題,於如何更有效地獲得能源方面人們發展了很多種方法。各種工業餘熱及太陽能都具有投資小或者無需投資之特點,因此具有一定之經濟效益和利用價值,然此類能源用其他能量轉換方式無法加以有效利用,用熱電轉換裝置製成熱電發電裝置係利用此類能源之較好方式。 The energy issue is a major problem facing the development of contemporary human society. There are many ways in which people can obtain energy more efficiently. Various industrial waste heat and solar energy have the characteristics of small investment or no investment, so they have certain economic benefits and utilization value. However, such energy can not be effectively utilized by other energy conversion methods, and thermoelectric power generation devices are utilized by thermoelectric conversion devices. A better way of doing this kind of energy.

對於熱電轉換裝置,其能量轉換效率之理論分析式為Emax=[(T1-T2)/T1]*[(1+ZT')1/2-1]/[(1+ZT')1/2+T2/T1],T1係高溫端溫度,T2係低溫端溫度,Z係跟材料有關之因數,T'=(T1+T2)/2,可見對於熱電轉換系統,其熱量轉換效率除與材料本身之性能有關外,還決定於高溫端和低溫端之溫差,溫差越大,其熱電轉換效率可提高之空間就越大,故提高熱電轉換器件高溫端之溫度成為應用中之一重要問題。於太陽能利用方面,要求能夠儘量多吸收太陽之輻射,於減少傳導和對流散射之同時,要儘量減少輻射散熱。 For the thermoelectric conversion device, the theoretical analysis formula of the energy conversion efficiency is E max =[(T 1 -T 2 )/T 1 ]*[(1+ZT') 1/2 -1]/[(1+ZT' 1/2 + T 2 /T 1 ], T 1 is the high temperature end temperature, T 2 is the low temperature end temperature, Z is the material related factor, T'=(T 1 +T 2 )/2, visible for the thermoelectric In addition to the performance of the material itself, the conversion efficiency of the conversion system is determined by the temperature difference between the high temperature end and the low temperature end. The larger the temperature difference is, the larger the space for the thermoelectric conversion efficiency can be increased, so the high temperature end of the thermoelectric conversion device is improved. The temperature becomes an important issue in the application. In terms of solar energy utilization, it is required to absorb the radiation of the sun as much as possible, and to reduce the radiation and heat dissipation while reducing the conduction and convection scattering.

目前主要應用於收集太陽能之裝置為集熱器,其分為太陽能管式集熱器和太陽能板式集熱器兩種。先前技術中太陽能管式集熱器(請參見“真空管太陽能家用熱水器及其東西向和南北向放置之 比較”,太陽能學報,吳家慶等,vol9,p396-405(1988))採用一真空吸熱管作為吸熱體,接收到太陽能後,利用冷水比熱水比重大之原理,而產生冷水下流、熱水上升現象,進而使該真空吸熱管內之液體達到自然對流迴圈加熱,具有良好之保溫性。然而,當太陽光照射到該真空吸熱管時,會因該真空吸熱管之圓管曲線,而將光能反射到其他地方,造成有效集熱面積變小、導熱效率不佳,從而當將該管式集熱器用於熱電發電裝置時,會進一步影響該熱電發電裝置之熱電轉換效率。 At present, the device mainly used for collecting solar energy is a heat collector, which is divided into a solar tube type collector and a solar panel type collector. Prior art solar tube collectors (see "vacuum tube solar home water heaters and their east-west and north-south placement Comparison", Journal of Solar Energy, Wu Jiaqing, etc., vol9, p396-405 (1988)) uses a vacuum heat absorbing tube as the heat absorbing body. After receiving the solar energy, the cold water flow and the hot water are generated by using the principle that the cold water is more important than the hot water. The rising phenomenon, in turn, the liquid in the vacuum heat absorbing tube reaches the natural convection loop heating, and has good heat preservation property. However, when the sunlight is irradiated to the vacuum heat absorbing tube, the circular tube curve of the vacuum heat absorbing tube is caused by Reflecting light energy to other places results in a small effective heat collecting area and poor heat conduction efficiency, so that when the tubular collector is used in a thermoelectric power generating device, the thermoelectric conversion efficiency of the thermoelectric power generating device is further affected.

太陽能板式集熱器之出現克服了該熱電發電裝置中出現之問題。請參閱圖1,2006年12月13日公告之第2847686號大陸專利也提供一種熱電發電裝置200,其包括一熱電轉換裝置210,一設置於熱電轉換裝置210兩端之受熱面220和冷卻面222,一設置於受熱面220表面之一層鎳鉻層224,該鎳鉻層224用於吸收熱量,一玻璃板226,該玻璃板226與受熱面220構成一真空封閉腔228,一設置於冷卻面222之冷卻水通道230。然而,由於鎳鉻層224對太陽能之吸收效率較低,因此採用鎳鉻層224作為吸熱材料之熱電發電裝置200之熱電轉換效率有待提高。 The advent of solar panel collectors overcomes the problems that arise in such thermoelectric generators. Referring to FIG. 1, the continental patent No. 2847686, issued on Dec. 13, 2006, also provides a thermoelectric generation device 200 including a thermoelectric conversion device 210, a heating surface 220 and a cooling surface disposed at both ends of the thermoelectric conversion device 210. 222, a layer of nickel-chromium layer 224 disposed on the surface of the heating surface 220, the nickel-chromium layer 224 is used to absorb heat, a glass plate 226, the glass plate 226 and the heating surface 220 constitute a vacuum closed cavity 228, a cooling device Cooling water channel 230 of face 222. However, since the nickel chrome layer 224 has a low absorption efficiency for solar energy, the thermoelectric conversion efficiency of the thermoelectric generation device 200 using the nickel chrome layer 224 as the heat absorbing material needs to be improved.

有鑒於此,提供一種具有較高熱電轉換效率之熱電發電裝置實為必要。 In view of the above, it is necessary to provide a thermoelectric generation device having high thermoelectric conversion efficiency.

一種熱電發電裝置,其包括:一集熱器,該集熱器包括至少一吸熱結構;一熱電轉換裝置,該熱電轉換裝置與該集熱器的吸熱結構相對設置,該集熱器的吸熱結構用於吸收熱量並將所吸收的熱量傳遞給該熱電轉換裝置,其中,所述吸熱結構包括至少一奈米 碳管結構。 A thermoelectric power generation device comprising: a heat collector comprising at least one heat absorbing structure; a thermoelectric conversion device, the thermoelectric conversion device being disposed opposite to the heat absorbing structure of the heat collector, and the heat absorbing structure of the heat collector For absorbing heat and transferring the absorbed heat to the thermoelectric conversion device, wherein the heat absorbing structure comprises at least one nanometer Carbon tube structure.

一種熱電發電裝置,其包括,一集熱器,該集熱器包括一空腔及至少一吸熱結構,所述吸熱結構設置於所述空腔的內部;一熱電轉換裝置,該熱電轉換裝置設置於所述空腔的內部,並且該熱電轉換裝置與該集熱器的吸熱結構相對設置,該集熱器的吸熱結構用於吸收熱量並將所吸收的熱量傳遞給該熱電轉換裝置,其中,所述吸熱結構包括至少一奈米碳管結構。 A thermoelectric power generation device comprising: a heat collector comprising a cavity and at least one heat absorbing structure, wherein the heat absorbing structure is disposed inside the cavity; a thermoelectric conversion device, wherein the thermoelectric conversion device is disposed at An interior of the cavity, and the thermoelectric conversion device is disposed opposite to the heat absorbing structure of the heat collector, wherein the heat absorbing structure of the heat collector is configured to absorb heat and transfer the absorbed heat to the thermoelectric conversion device, wherein The endothermic structure includes at least one carbon nanotube structure.

一種熱電發電裝置,其包括,一集熱器,該集熱器包括一空腔及至少一吸熱結構,所述吸熱結構設置於所述空腔的內部;一熱電轉換裝置,該熱電轉換裝置設置於所述集熱器的空腔外,並且該熱電轉換裝置與該集熱器的吸熱結構熱耦合,該集熱器的吸熱結構用於吸收熱量並將所吸收的熱量傳遞給該熱電轉換裝置,其中,所述的吸熱結構包括至少一奈米碳管結構。 A thermoelectric power generation device comprising: a heat collector comprising a cavity and at least one heat absorbing structure, wherein the heat absorbing structure is disposed inside the cavity; a thermoelectric conversion device, wherein the thermoelectric conversion device is disposed at Outside the cavity of the heat collector, and the thermoelectric conversion device is thermally coupled to the heat absorbing structure of the heat collector, the heat absorbing structure of the heat collector is configured to absorb heat and transfer the absorbed heat to the thermoelectric conversion device. Wherein, the heat absorbing structure comprises at least one carbon nanotube structure.

一種熱電發電裝置,其包括,一集熱器,該集熱器包括一吸熱結構;一熱電轉換裝置,該熱電轉換裝置熱耦合於集熱器的吸熱結構,該集熱器的吸熱結構用於吸收熱量並將所吸收的熱量傳遞給該熱電轉換裝置,其中,所述吸熱結構包括一奈米碳管膜狀結構,該奈米碳管膜狀結構包括多個奈米碳管。 A thermoelectric power generation device comprising: a heat collector, the heat collector comprising a heat absorbing structure; a thermoelectric conversion device thermally coupled to the heat absorbing structure of the heat collector, the heat absorbing structure of the heat collector being used for The heat is absorbed and the absorbed heat is transferred to the thermoelectric conversion device, wherein the heat absorbing structure comprises a carbon nanotube film structure comprising a plurality of carbon nanotubes.

相較於先前技術,該熱電發電裝置採用奈米碳管結構作吸熱結構,利用奈米碳管結構良好之吸熱特性,可顯著提高集熱器之能量吸收效率,從而使得該熱電發電裝置之熱電轉換效率較高。 Compared with the prior art, the thermoelectric power generation device adopts a carbon nanotube structure as an endothermic structure, and the heat absorption characteristic of the carbon nanotube structure can significantly improve the energy absorption efficiency of the heat collector, thereby making the thermoelectricity of the thermoelectric generation device. The conversion efficiency is high.

200、300、400、500、600‧‧‧熱電發電裝置 200, 300, 400, 500, 600‧‧‧ thermoelectric power generation units

210、330、430、530、630‧‧‧熱電轉換裝置 210, 330, 430, 530, 630 ‧ ‧ thermoelectric conversion device

220‧‧‧受熱面 220‧‧‧ Heating surface

222‧‧‧冷卻面 222‧‧‧Slow surface

224‧‧‧鎳鉻層 224‧‧‧ Nickel chrome layer

226‧‧‧玻璃板 226‧‧‧ glass plate

228‧‧‧真空封閉腔 228‧‧‧Vacuum closed cavity

230‧‧‧冷卻水通道 230‧‧‧Cooling water channel

310、410、510、610‧‧‧上基板 310, 410, 510, 610‧‧‧ upper substrate

312、412、512、612‧‧‧下基板 312, 412, 512, 612‧‧‧ lower substrate

314、414、514、614‧‧‧吸熱結構 314, 414, 514, 614‧‧ ‧ heat absorption structure

316、416、516、616‧‧‧邊框支架 316, 416, 516, 616‧‧‧ frame bracket

318、418、518、618‧‧‧空腔 318, 418, 518, 618‧‧‧ cavity

320、420、520、620‧‧‧集熱器 320, 420, 520, 620‧ ‧ collectors

322、422、522、622‧‧‧第一選擇性透過層 322, 422, 522, 622‧‧‧ first selective transmission layer

324、424、524、624‧‧‧第二選擇性透過層 324, 424, 524, 624‧‧‧ second selective transmission layer

326、426‧‧‧承載體 326, 426‧‧‧ carrier

332、432、532、632‧‧‧第一電極 332, 432, 532, 632‧‧‧ first electrode

334、434、534、634‧‧‧第二電極 334, 434, 534, 634 ‧ ‧ second electrode

336、436、536、636‧‧‧P型熱電結構 336, 436, 536, 636‧‧‧P type thermoelectric structure

338、438、538、638‧‧‧N型熱電結構 338, 438, 538, 638‧‧‧N type thermoelectric structures

340、440、540、640‧‧‧致冷裝置 340, 440, 540, 640‧‧‧ refrigeration equipment

550、650‧‧‧支撐元件 550, 650‧‧‧ support components

圖1係先前技術提供之一種熱電發電裝置剖視圖。 1 is a cross-sectional view of a thermoelectric generation device provided by the prior art.

圖2係本發明第一實施例之熱電發電裝置剖視圖。 Figure 2 is a cross-sectional view showing a thermoelectric generation device according to a first embodiment of the present invention.

圖3係本發明第一實施例之熱電發電裝置之吸熱結構中奈米碳管絮化膜之掃描電鏡照片。 Fig. 3 is a scanning electron micrograph of a carbon nanotube flocculation film in the heat absorbing structure of the thermoelectric generation device according to the first embodiment of the present invention.

圖4係本發明第一實施例之熱電發電裝置之吸熱結構中奈米碳管碾壓膜之掃描電鏡照片。 Fig. 4 is a scanning electron micrograph of a carbon nanotube rolled film in the heat absorbing structure of the thermoelectric generation device according to the first embodiment of the present invention.

圖5係本發明第一實施例之熱電發電裝置之吸熱結構中奈米碳管拉膜之掃描電鏡照片。 Fig. 5 is a scanning electron micrograph of a carbon nanotube film in a heat absorbing structure of a thermoelectric generation device according to a first embodiment of the present invention.

圖6係圖5中之奈米碳管拉膜中奈米碳管片斷之結構示意圖。 Fig. 6 is a schematic view showing the structure of a carbon nanotube segment in the carbon nanotube film of Fig. 5.

圖7係本發明第二實施例之熱電發電裝置剖視圖。 Figure 7 is a cross-sectional view showing a thermoelectric generation device according to a second embodiment of the present invention.

圖8係本發明第三實施例之熱電發電裝置剖視圖。 Figure 8 is a cross-sectional view showing a thermoelectric generation device according to a third embodiment of the present invention.

圖9係本發明第四實施例之熱電發電裝置剖視圖。 Figure 9 is a cross-sectional view showing a thermoelectric generation device according to a fourth embodiment of the present invention.

以下將結合附圖及具體實施例詳細說明本發明提供之熱電發電裝置。 Hereinafter, the thermoelectric generation device provided by the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.

請參閱圖2,本發明第一實施例提供一種熱電發電裝置300,該熱電發電裝置300包括:一集熱器320、一熱電轉換裝置330及一致冷裝置340。該集熱器320可用於收集熱量,並將所收集之熱量傳遞給熱電轉換裝置330,該致冷裝置340與熱電轉換裝置330相對設置。 Referring to FIG. 2, a first embodiment of the present invention provides a thermoelectric generation device 300. The thermoelectric generation device 300 includes a heat collector 320, a thermoelectric conversion device 330, and a uniform cooling device 340. The collector 320 can be used to collect heat and transfer the collected heat to the thermoelectric conversion device 330, which is disposed opposite the thermoelectric conversion device 330.

該集熱器320包括一上基板310、一下基板312、一邊框支架316、一吸熱結構314、一第一選擇性透過層322、一第二選擇性透過層324、一承載體326及一支撐物(圖未示)。該上基板310和下基 板312相對設置,該邊框支架316設置於該上基板310和下基板312之間,該上基板310、下基板312及邊框支架316共同構成一空腔318,該吸熱結構314設置於空腔318內部,該承載體326用於承載該吸熱結構314並與該吸熱結構314接觸設置,該第一選擇性透過層322設置於上基板310位於空腔318內之表面,該第二選擇性透過層324設置於下基板312位於空腔318內之表面,該支撐物設置於空腔318內部並設置於下基板312與上基板310之間。 The heat collector 320 includes an upper substrate 310, a lower substrate 312, a frame support 316, a heat absorbing structure 314, a first selective transmission layer 322, a second selective transmission layer 324, a carrier 326, and a support. (not shown). The upper substrate 310 and the lower base The 312 is disposed between the upper substrate 310 and the lower substrate 312. The upper substrate 310, the lower substrate 312 and the frame support 316 together form a cavity 318. The heat absorbing structure 314 is disposed inside the cavity 318. The carrier 326 is configured to carry the heat absorbing structure 314 and is disposed in contact with the heat absorbing structure 314. The first selective transmission layer 322 is disposed on a surface of the upper substrate 310 located in the cavity 318. The second selective transmission layer 324 is disposed. The lower substrate 312 is disposed on a surface of the cavity 318. The support is disposed inside the cavity 318 and disposed between the lower substrate 312 and the upper substrate 310.

該上基板310為一透光基板,該上基板310採用透光材料製成,如玻璃、塑膠、石英、透明陶瓷、樹脂等。該上基板310之厚度為100微米~5毫米,優選為3毫米。該上基板310之形狀不限,可係三角形、六邊形、四邊形等,本實施例中該上基板310之形狀為長方形之玻璃板。 The upper substrate 310 is a light transmissive substrate, and the upper substrate 310 is made of a light transmissive material such as glass, plastic, quartz, transparent ceramic, resin, or the like. The upper substrate 310 has a thickness of from 100 micrometers to 5 millimeters, preferably 3 millimeters. The shape of the upper substrate 310 is not limited, and may be a triangle, a hexagon, a quadrangle, or the like. In the embodiment, the upper substrate 310 has a rectangular glass plate.

該下基板312可採用玻璃或導熱性較好之金屬材料製成,該金屬材料可選自鋅、鋁或不銹鋼等。該下基板312之厚度為100微米~5毫米,優選為3毫米。該下基板312之形狀不限,可係三角形、六邊形、四邊形等,本實施例中該下基板312之形狀為長方形之玻璃板。 The lower substrate 312 may be made of glass or a metal material having better thermal conductivity, and the metal material may be selected from zinc, aluminum or stainless steel. The lower substrate 312 has a thickness of from 100 micrometers to 5 millimeters, preferably 3 millimeters. The shape of the lower substrate 312 is not limited, and may be a triangle, a hexagon, a quadrangle, or the like. In the embodiment, the shape of the lower substrate 312 is a rectangular glass plate.

該邊框支架316可採用硬性材料製成,如玻璃、陶瓷等。該邊框支架316之高度為100微米~500微米,優選為150微米~250微米。 The bezel bracket 316 can be made of a hard material such as glass, ceramic, or the like. The height of the frame holder 316 is from 100 micrometers to 500 micrometers, preferably from 150 micrometers to 250 micrometers.

該空腔318內可為真空絕熱環境、也可填充有導熱效果較差之氣體或填充有能夠透光且保溫之材料,該導熱效果較差之氣體包括氮氣等,該透光且保溫之材料可為透明之泡沫型保溫材料,如耐熱塑膠等。該空腔318優選為真空絕熱環境,以抑制空氣之自然對流,從而減少該集熱器320中對流換熱之損失,起到保溫作用 ,從而大大提高該集熱器320之吸熱效率。 The cavity 318 can be a vacuum insulation environment, or can be filled with a gas with poor heat conduction effect or filled with a material capable of transmitting light and heat preservation. The gas with poor heat conduction effect includes nitrogen gas, etc., and the light transmissive and heat insulating material can be Transparent foam insulation materials, such as heat-resistant plastics. The cavity 318 is preferably a vacuum insulation environment to suppress natural convection of the air, thereby reducing the loss of convective heat transfer in the collector 320 and providing insulation. Therefore, the heat absorption efficiency of the heat collector 320 is greatly improved.

該吸熱結構314包括至少一由純奈米碳管組成之奈米碳管結構或由其他基體與奈米碳管組成之奈米碳管複合結構。該基體材料為無機材料、金屬材料或有機聚合物,優選為導熱性好之材料,如氧化鋁、銀、銅或鎳等。該吸熱結構314對太陽光之吸收率隨吸熱結構314厚度之增加而增加,因為,該吸熱結構314之厚度越厚,其單位時間內吸收之熱量越多,即該吸熱結構314之厚度越厚,對於太陽光之吸收效率越高。本實施例中,該吸熱結構314之厚度大於3微米。 The endothermic structure 314 includes at least one carbon nanotube structure composed of pure carbon nanotubes or a carbon nanotube composite structure composed of other substrates and carbon nanotubes. The base material is an inorganic material, a metal material or an organic polymer, and is preferably a material having good thermal conductivity such as alumina, silver, copper or nickel. The absorption rate of the heat absorbing structure 314 increases with the increase of the thickness of the heat absorbing structure 314. The thicker the heat absorbing structure 314, the more heat is absorbed per unit time, that is, the thicker the heat absorbing structure 314 is. The higher the absorption efficiency for sunlight. In this embodiment, the thickness of the heat absorbing structure 314 is greater than 3 microns.

該奈米碳管包括單壁奈米碳管、雙壁奈米碳管或多壁奈米碳管中之一種或者多種。該單壁奈米碳管之直徑為0.5奈米~50奈米。該雙壁奈米碳管之直徑為1.0奈米~50奈米。該多壁奈米碳管之直徑為1.5奈米~50奈米。 The carbon nanotubes include one or more of a single-walled carbon nanotube, a double-walled carbon nanotube, or a multi-walled carbon nanotube. The single-walled carbon nanotube has a diameter of 0.5 nm to 50 nm. The double-walled carbon nanotube has a diameter of 1.0 nm to 50 nm. The multi-walled carbon nanotube has a diameter of 1.5 nm to 50 nm.

該奈米碳管結構包括至少一奈米碳管膜、至少一奈米碳管線狀結構、奈米碳管膜和奈米碳管線狀結構之組合或至少一奈米碳管陣列。該奈米碳管膜中之奈米碳管可以有序排列或無序排列,無序指奈米碳管之排列方向不固定,即沿各方向排列之奈米碳管之數量基本相等,有序指至少多數奈米碳管之排列方向具有一定規律,如基本沿一個固定方向擇優取向或基本沿幾個固定方向擇優取向。該無序排列之奈米碳管可以通過凡德瓦爾力相互纏繞、相互吸引且平行於奈米碳管結構之表面。該有序排列之奈米碳管可以沿一個方向或複數方向擇優取向排列。當奈米碳管結構僅包括一個奈米碳管線狀結構時,該奈米碳管線狀結構可以多次折疊或纏繞而成一層狀奈米碳管結構。當奈米碳管結構包括複數奈米碳管 線狀結構時,複數奈米碳管線狀結構可相互平行設置,交叉設置或編織設置。當奈米碳管結構同時包括奈米碳管膜和奈米碳管線狀結構時,該奈米碳管線狀結構設置於奈米碳管膜之至少一表面。 The carbon nanotube structure comprises at least one carbon nanotube film, at least one nano carbon line structure, a combination of a carbon nanotube film and a nano carbon line structure, or at least one carbon nanotube array. The carbon nanotubes in the carbon nanotube film may be arranged in an orderly or disorderly manner, and the disorderly means that the arrangement direction of the carbon nanotubes is not fixed, that is, the number of carbon nanotubes arranged in all directions is substantially equal, The order means that at least most of the carbon nanotubes have a certain order of arrangement, such as a preferred orientation along a fixed direction or a preferred orientation along several fixed directions. The disordered arrangement of carbon nanotubes can be intertwined by Van der Waals forces, attracting each other and parallel to the surface of the carbon nanotube structure. The ordered carbon nanotubes can be arranged in a preferred orientation in one direction or in a plurality of directions. When the carbon nanotube structure includes only one nanocarbon line-like structure, the nanocarbon line-like structure can be folded or wound a plurality of times to form a layered carbon nanotube structure. When the carbon nanotube structure includes a plurality of carbon nanotubes In the case of a linear structure, the plurality of nanocarbon line-like structures may be arranged in parallel with each other, arranged in a cross or woven. When the carbon nanotube structure includes both a carbon nanotube film and a nanocarbon line-like structure, the nanocarbon line-like structure is disposed on at least one surface of the carbon nanotube film.

該奈米碳管膜包括奈米碳管絮化膜、奈米碳管碾壓膜、奈米碳管拉膜。 The carbon nanotube film comprises a carbon nanotube film, a carbon nanotube film, and a carbon nanotube film.

請參見圖3,該奈米碳管絮化膜為各向同性,其包括複數無序排列且均勻分佈之奈米碳管。奈米碳管長度較長,並通過凡德瓦爾力相互吸引、相互纏繞。因此,奈米碳管絮化膜具有很好之柔韌性,可彎曲折疊成任意形狀而不破裂,且具有較好之自支撐性能,可無需基底支撐而自支撐存於。該奈米碳管絮化膜中奈米碳管之長度大於10微米。該奈米碳管絮化膜之厚度為0.5奈米-1毫米。該奈米碳管絮化膜為將一奈米碳管原料經絮化處理得到。該奈米碳管絮化膜及其製備方法請參見本申請人於2008年11月16日公開之第200844041號台灣專利申請(申請人:鴻富錦精密工業(深圳)有限公司)。為節省篇幅,僅引用於此,但上述申請所有技術揭露也應視為本發明申請技術揭露的一部分。 Referring to FIG. 3, the carbon nanotube flocculation membrane is isotropic, and includes a plurality of randomly arranged and uniformly distributed carbon nanotubes. The carbon nanotubes are long in length and are attracted to each other by the van der Waals force. Therefore, the carbon nanotube flocculation film has good flexibility, can be bent and folded into any shape without cracking, and has better self-supporting property, and can be self-supported without the support of the substrate. The length of the carbon nanotubes in the carbon nanotube flocculation membrane is greater than 10 microns. The carbon nanotube film has a thickness of 0.5 nm to 1 mm. The carbon nanotube flocculation membrane is obtained by subjecting a carbon nanotube raw material to flocculation treatment. For the carbon nanotube flocculation membrane and the preparation method thereof, refer to Taiwan Patent Application No. 200844041 (Applicant: Hongfujin Precision Industry (Shenzhen) Co., Ltd.) disclosed by the applicant on November 16, 2008. In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.

該奈米碳管碾壓膜為採用一壓頭或壓板沿同一方向或不同方向碾壓一奈米碳管陣列得到。該奈米碳管碾壓膜包括均勻分佈之奈米碳管,奈米碳管各向同性、沿同一方向或不同方向擇優取向排列。該奈米碳管碾壓膜中之奈米碳管與形成奈米碳管陣列之基體之表面成一夾角α,其中,α大於等於0度且小於等於15度(0≦α≦15°)。依據碾壓之方式不同,該奈米碳管碾壓膜中之奈米碳管具有不同之排列形式。具體地,奈米碳管可各向同性排列,當沿 不同方向碾壓時,奈米碳管沿不同方向擇優取向排列,請參見圖4,奈米碳管於奈米碳管碾壓膜中可沿一固定方向擇優取向排列,也可沿不同方向擇優取向排列。該奈米碳管碾壓膜中之奈米碳管部分交疊。該奈米碳管碾壓膜中奈米碳管之間通過凡德瓦爾力相互吸引,緊密結合,使得該奈米碳管碾壓膜具有很好之柔韌性,可彎曲折疊成任意形狀而不破裂。且由於奈米碳管碾壓膜中之奈米碳管之間通過凡德瓦爾力相互吸引,緊密結合,使奈米碳管碾壓膜為一自支撐之結構,可無需基底支撐而自支撐存於。該奈米碳管碾壓膜之厚度為0.5奈米-1毫米。該奈米碳管碾壓膜及其製備方法請參見本申請人於2009年1月1日公開之第200900348號台灣專利申請(申請人:鴻富錦精密工業(深圳)有限公司)。為節省篇幅,僅引用於此,但上述申請所有技術揭露也應視為本發明申請技術揭露的一部分。 The carbon nanotube rolled film is obtained by rolling an array of carbon nanotubes in the same direction or in different directions by using a pressing head or a pressing plate. The carbon nanotube rolled film comprises uniformly distributed carbon nanotubes, and the carbon nanotubes are isotropic, arranged in the same direction or in different directions. The carbon nanotubes in the carbon nanotube rolled film form an angle α with the surface of the substrate forming the carbon nanotube array, wherein α is greater than or equal to 0 degrees and less than or equal to 15 degrees (0 ≦ α ≦ 15°). The carbon nanotubes in the carbon nanotube rolled film have different arrangements depending on the manner of rolling. Specifically, the carbon nanotubes can be isotropically arranged along the edge When rolling in different directions, the carbon nanotubes are arranged in different directions. Please refer to Figure 4. The carbon nanotubes can be arranged in a fixed orientation along the carbon nanotube film, or they can be selected in different directions. Orientation. The carbon nanotubes in the carbon nanotube rolled film partially overlap. The carbon nanotubes in the carbon nanotube film are attracted to each other by van der Waals force, and the carbon nanotubes have good flexibility and can be bent and folded into any shape without being tightly combined. rupture. And because the carbon nanotubes in the carbon nanotube film are attracted to each other through the van der Waals force, the carbon nanotube film is a self-supporting structure, which can be self-supporting without the substrate support. Saved. The carbon nanotube rolled film has a thickness of 0.5 nm to 1 mm. For the carbon nanotube rolled film and the preparation method thereof, refer to Taiwan Patent Application No. 200900348 (Applicant: Hongfujin Precision Industry (Shenzhen) Co., Ltd.) disclosed by the applicant on January 1, 2009. In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.

請參見圖5,該奈米碳管拉膜為從一超順排奈米碳管陣列中拉取獲得,該奈米碳管拉膜包括複數首尾相連且沿拉伸方向擇優取向排列之奈米碳管。該奈米碳管均勻分佈,且平行於奈米碳管膜表面。該奈米碳管膜中之奈米碳管之間通過凡德瓦爾力連接。一方面,首尾相連之奈米碳管之間通過凡德瓦爾力連接,另一方面,平行之奈米碳管之間部分亦通過凡德瓦爾力結合。請參閱圖6,該奈米碳管拉膜進一步包括複數首尾相連之奈米碳管片段362,每個奈米碳管片段362由複數相互平行之奈米碳管364構成,奈米碳管片段362兩端通過凡德瓦爾力相互連接。該奈米碳管片段362具有任意之長度、厚度、均勻性及形狀。該奈米碳管拉膜之厚度為0.5奈米-100微米。該奈米碳管拉膜結構及其製備方法請參見本申請人於2008年8月16日公開之第200833862號台灣公開專利申 請(申請人:鴻富錦精密工業(深圳)有限公司)。為節省篇幅,僅引用於此,但上述申請所有技術揭露也應視為本發明申請技術揭露的一部分。 Referring to FIG. 5, the carbon nanotube film is obtained by pulling from a super-sequential carbon nanotube array, and the carbon nanotube film comprises a plurality of nanometers connected end to end and arranged in a preferred orientation in the stretching direction. Carbon tube. The carbon nanotubes are evenly distributed and parallel to the surface of the carbon nanotube film. The carbon nanotubes in the carbon nanotube membrane are connected by van der Waals force. On the one hand, the end-to-end carbon nanotubes are connected by van der Waals force, and on the other hand, the parallel carbon nanotubes are also joined by van der Waals force. Referring to FIG. 6, the carbon nanotube film further comprises a plurality of end-to-end carbon nanotube segments 362, each of the carbon nanotube segments 362 being composed of a plurality of mutually parallel carbon nanotubes 364, and a carbon nanotube segment. Both ends of the 362 are connected to each other by Van der Valli. The carbon nanotube segments 362 have any length, thickness, uniformity, and shape. The carbon nanotube film has a thickness of 0.5 nm to 100 μm. For the structure of the carbon nanotube film and the preparation method thereof, please refer to the Taiwan Patent Application No. 200833862 disclosed by the applicant on August 16, 2008. Please (Applicant: Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd.). In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.

可以理解,該奈米碳管結構可進一步包括至少兩個層疊設置之奈米碳管膜。由於奈米碳管結構中之奈米碳管膜可層疊設置,故,上述奈米碳管結構之厚度不限,可根據實際需要製成具有任意厚度之奈米碳管結構。當奈米碳管結構包括複數層疊設置之奈米碳管拉膜時,相鄰之奈米碳管拉膜中之奈米碳管之排列方向形成一夾角β,0°≦β≦90°。 It will be appreciated that the carbon nanotube structure may further comprise at least two laminated carbon nanotube membranes. Since the carbon nanotube film in the carbon nanotube structure can be stacked, the thickness of the above-mentioned carbon nanotube structure is not limited, and a carbon nanotube structure having an arbitrary thickness can be formed according to actual needs. When the carbon nanotube structure comprises a plurality of stacked carbon nanotube film, the arrangement direction of the carbon nanotubes in the adjacent carbon nanotube film forms an angle β, 0° ≦ β ≦ 90°.

該奈米碳管線狀結構包括至少一非扭轉之奈米碳管線、至少一扭轉之奈米碳管線或其組合。該奈米碳管線狀結構包括多根非扭轉之奈米碳管線或扭轉之奈米碳管線時,該非扭轉之奈米碳管線或扭轉之奈米碳管線可相互平行呈一束狀結構,或相互扭轉呈一絞線結構。 The nanocarbon line-like structure includes at least one non-twisted nanocarbon line, at least one twisted nanocarbon line, or a combination thereof. When the nanocarbon line-like structure comprises a plurality of non-twisted nano carbon pipelines or twisted nanocarbon pipelines, the non-twisted nano carbon pipeline or the twisted nanocarbon pipeline may be parallel to each other in a bundle structure, or They are twisted to each other in a twisted line structure.

非扭轉之奈米碳管線為將奈米碳管拉膜通過有機溶劑處理得到。具體地,將有機溶劑浸潤該奈米碳管拉膜之整個表面,於揮發性有機溶劑揮發時產生之表面張力之作用下,奈米碳管拉膜中之相互平行之複數奈米碳管通過凡德瓦爾力緊密結合,從而使奈米碳管拉膜收縮為一非扭轉之奈米碳管線。該有機溶劑為揮發性有機溶劑,如乙醇、甲醇、丙酮、二氯乙烷或氯仿,本實施例中採用乙醇。通過有機溶劑處理之非扭轉奈米碳管線與未經有機溶劑處理之奈米碳管膜相比,比表面積減小,黏性降低。 The non-twisted nano carbon line is obtained by treating the carbon nanotube film with an organic solvent. Specifically, the organic solvent is used to impregnate the entire surface of the carbon nanotube film, and the parallel carbon nanotubes in the carbon nanotube film are passed through the surface tension generated by the volatilization of the volatile organic solvent. The van der Waals force is tightly combined to shrink the nanocarbon tube film into a non-twisted nano carbon line. The organic solvent is a volatile organic solvent such as ethanol, methanol, acetone, dichloroethane or chloroform, and ethanol is used in this embodiment. The non-twisted nanocarbon line treated by the organic solvent has a smaller specific surface area and a lower viscosity than the carbon nanotube film which is not treated with the organic solvent.

該扭轉之奈米碳管線為採用一機械力將該奈米碳管拉膜兩端沿相反方向扭轉獲得。進一步地,可採用一揮發性有機溶劑處理該扭 轉之奈米碳管線。於揮發性有機溶劑揮發時產生之表面張力之作用下,處理後之扭轉之奈米碳管線中相鄰之奈米碳管通過凡德瓦爾力緊密結合,使扭轉之奈米碳管線之比表面積減小,密度及強度增大。 The twisted nanocarbon pipeline is obtained by twisting both ends of the carbon nanotube film in the opposite direction by a mechanical force. Further, the volatile organic solvent can be used to treat the twist Transfer to the nano carbon line. Under the action of the surface tension generated by the volatilization of the volatile organic solvent, the adjacent carbon nanotubes in the twisted nanocarbon pipeline after treatment are tightly bonded by van der Waals force, so that the specific surface area of the twisted nanocarbon pipeline Decrease, increase in density and strength.

該奈米碳管線狀結構及其製備方法請參見本申請人於2008年11月21日公告之第I303239號台灣公告專利(申請人:鴻富錦精密工業(深圳)有限公司),及於2007年7月1日公開之第200724486號台灣公開專利申請(申請人:鴻富錦精密工業(深圳)有限公司)。為節省篇幅,僅引用於此,但上述申請所有技術揭露也應視為本發明申請技術揭露的一部分。 For the nano carbon line structure and its preparation method, please refer to the Taiwan Announcement Patent No. I303239 (Applicant: Hongfujin Precision Industry (Shenzhen) Co., Ltd.) announced by the applicant on November 21, 2008, and in 2007. Taiwan Patent Application No. 200724486, published on July 1, 2010 (Applicant: Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd.). In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.

該奈米碳管陣列為通過化學氣相沈積法或其他方法直接生長獲得。該奈米碳管陣列包括複數彼此基本平行之奈米碳管。 The carbon nanotube array is obtained by direct growth by chemical vapor deposition or other methods. The carbon nanotube array includes a plurality of carbon nanotubes that are substantially parallel to each other.

該奈米碳管複合結構中,該奈米碳管於奈米碳管複合結構中之含量為80%以上。其中,由上述奈米碳管結構和其他有機聚合物基體組成之奈米碳管複合結構之製備方法為:將上述奈米碳管結構浸入一摻雜有固化劑等添加物之有機聚合物溶液中,並將該有機聚合物溶液進行固化處理。由上述奈米碳管結構和其他無機材料或金屬材料基體組成之奈米碳管複合結構之製備方法為:將上述奈米碳管結構浸入一含有金屬粉或無機粉體之有機溶劑中,之後揮發該有機溶劑。另,該奈米碳管複合結構之製備方法還可為:首先,將複數奈米碳管混入一定之溶劑(如1,2-二氯乙烷)中超聲分散處理或採取其他方式使奈米碳管分散均勻;然後,再將其與一定之有機載體混合(如松油醇與纖維素之混合物)並固化,從而制得奈米碳管複合結構。 In the carbon nanotube composite structure, the content of the carbon nanotube in the carbon nanotube composite structure is 80% or more. Wherein, the carbon nanotube composite structure composed of the above carbon nanotube structure and other organic polymer matrix is prepared by immersing the above carbon nanotube structure in an organic polymer solution doped with an additive such as a curing agent; And curing the organic polymer solution. The carbon nanotube composite structure composed of the above carbon nanotube structure and other inorganic material or metal material matrix is prepared by immersing the above carbon nanotube structure in an organic solvent containing metal powder or inorganic powder, and then The organic solvent is volatilized. In addition, the preparation method of the carbon nanotube composite structure may also be: first, mixing a plurality of carbon nanotubes into a certain solvent (such as 1,2-dichloroethane) for ultrasonic dispersion treatment or adopting other methods to make the nanometer. The carbon tube is uniformly dispersed; then, it is mixed with a certain organic carrier (for example, a mixture of terpineol and cellulose) and solidified to obtain a carbon nanotube composite structure.

本實施例中,該吸熱結構314包括一奈米碳管結構,該奈米碳管結構包括層疊設置之多層奈米碳管拉膜,該吸熱結構314之吸熱效率隨厚度之增加而增加。當吸熱結構314之厚度為10微米時,該吸熱結構314之吸熱效率可達到96%。 In this embodiment, the heat absorbing structure 314 includes a carbon nanotube structure including a plurality of stacked carbon nanotube films stacked in a stack, and the heat absorbing efficiency of the heat absorbing structure 314 increases as the thickness increases. When the thickness of the heat absorbing structure 314 is 10 micrometers, the endothermic structure 314 can have an endothermic efficiency of 96%.

由於本實施例中,該奈米碳管拉膜係從超順排奈米碳管陣列拉取得到,其長度和寬度可較準確地控制。且該奈米碳管拉膜具有韌性,可彎折成任意形狀,方便製成各種形狀之集熱器,適於各種應用。 In this embodiment, the carbon nanotube film is obtained from the ultra-shoring carbon nanotube array, and its length and width can be controlled more accurately. The carbon nanotube film has toughness and can be bent into any shape to facilitate the production of collectors of various shapes, and is suitable for various applications.

另,奈米碳管對電磁波之吸收接近絕對黑體,對各種波長之光具有均一之吸收特性,故奈米碳管對於太陽光有較好之吸收特性,照射到奈米碳管膜上之93%~98%之太陽光都可被奈米碳管膜所吸收。 In addition, the absorption of electromagnetic waves by the carbon nanotubes is close to the absolute black body, and has uniform absorption characteristics for light of various wavelengths. Therefore, the carbon nanotubes have good absorption characteristics for sunlight, and are irradiated onto the carbon nanotube film. %~98% of the sunlight is absorbed by the carbon nanotube film.

該第一選擇性透過層322和第二選擇性透過層324為一紅外選擇性透過層。該第一選擇性透過層322和第二選擇性透過層324對於紫外光、可見光和近紅外線之透過率較高,且可反射遠紅外線。當吸熱結構314吸收太陽光之後,會繼續向外輻射遠紅外線,所輻射之遠紅外線可通過第一選擇性透過層322和第二選擇性透過層324反射,反射之遠紅外線可再次被吸熱結構314吸收,從而可減少該集熱器320對太陽能能量之輻射損失,增大該集熱器320對太陽能之能量轉化效率。該第一選擇性透過層322和第二選擇性透過層324之厚度為10奈米~1微米。 The first selectively permeable layer 322 and the second selectively permeable layer 324 are an infrared selective transmission layer. The first selective transmission layer 322 and the second selective transmission layer 324 have high transmittance for ultraviolet light, visible light, and near infrared light, and can reflect far infrared rays. When the heat absorbing structure 314 absorbs sunlight, it will continue to radiate far infrared rays outward, and the far infrared rays radiated may be reflected by the first selective transmission layer 322 and the second selective transmission layer 324, and the far infrared rays reflected may be again absorbed by the heat absorption structure. 314 absorbs, thereby reducing the radiation loss of the solar energy of the collector 320, and increasing the energy conversion efficiency of the collector 320 to solar energy. The first selective transmission layer 322 and the second selective transmission layer 324 have a thickness of 10 nm to 1 μm.

該第一選擇性透過層322和第二選擇性透過層324可為氧化銦錫薄膜、氧化鋅鋁膜、多層光學膜、奈米碳管結構或奈米碳管複合結構。該奈米碳管結構或奈米碳管複合結構中之奈米碳管有序排列 或無序排列。本實施例中該第一選擇性透過層322和第二選擇性透過層324之材料為氧化銦錫薄膜。 The first selective transmission layer 322 and the second selective transmission layer 324 may be an indium tin oxide film, a zinc oxide aluminum film, a multilayer optical film, a carbon nanotube structure or a carbon nanotube composite structure. Ordered arrangement of carbon nanotubes in the carbon nanotube structure or the carbon nanotube composite structure Or disorderly. The material of the first selective transmission layer 322 and the second selective transmission layer 324 in this embodiment is an indium tin oxide film.

該承載體326設置於吸熱結構314和熱電轉換裝置330之間,該承載體326與吸熱結構314接觸設置,且該承載體326用於承載該吸熱結構314。該承載體326之材料為具有較高導熱係數之材料,如玻璃、銅或鋁等。 The carrier 326 is disposed between the heat absorbing structure 314 and the thermoelectric conversion device 330. The carrier 326 is disposed in contact with the heat absorbing structure 314, and the carrier 326 is configured to carry the heat absorbing structure 314. The material of the carrier 326 is a material having a high thermal conductivity such as glass, copper or aluminum.

該支撐物之高度等於該邊框支架316之高度。該支撐物係由吸熱性較弱之材料製成,如玻璃或陶瓷,其形狀不限,可為玻璃珠或者玻璃柱等。當上下基板面積較大時,該複數支撐物可使上下基板間隔設置,以抵抗來自大氣之壓力。 The height of the support is equal to the height of the bezel bracket 316. The support is made of a material having a weak heat absorption, such as glass or ceramic, and its shape is not limited, and may be a glass bead or a glass column or the like. When the upper and lower substrates are large in area, the plurality of supports can be spaced apart from each other to resist pressure from the atmosphere.

該熱電轉換裝置330設置於集熱器320之空腔318內,並設置於該第二選擇性透過層324和承載體326之間,用於支撐該承載體326和吸熱結構314。該熱電轉換裝置330包括:複數第一電極332,複數第二電極334,複數P型熱電結構336及複數N型熱電結構338。該複數P型熱電結構336和複數N型熱電結構338交替間隔排列並通過複數第一電極332和複數第二電極334交替串聯。具體為當該熱電轉換裝置330工作時,電流交替通過P型熱電結構336和N型熱電結構338。該第一電極332與上述集熱器320之吸熱結構314相對且通過承載體326間隔設置,該第二電極334與上述集熱器320之第二選擇性透過層324接觸設置。 The thermoelectric conversion device 330 is disposed in the cavity 318 of the collector 320 and disposed between the second selective transmission layer 324 and the carrier 326 for supporting the carrier 326 and the heat absorption structure 314. The thermoelectric conversion device 330 includes a plurality of first electrodes 332, a plurality of second electrodes 334, a plurality of P-type thermoelectric structures 336, and a plurality of N-type thermoelectric structures 338. The plurality of P-type thermoelectric structures 336 and the plurality of N-type thermoelectric structures 338 are alternately arranged and alternately connected in series by the plurality of first electrodes 332 and the plurality of second electrodes 334. Specifically, when the thermoelectric conversion device 330 operates, current alternates through the P-type thermoelectric structure 336 and the N-type thermoelectric structure 338. The first electrode 332 is opposite to the heat absorbing structure 314 of the heat collector 320 and is spaced apart by the carrier 326. The second electrode 334 is disposed in contact with the second selective transmission layer 324 of the collector 320.

該致冷裝置340設置於上述集熱器320之下基板312位於空腔318外之表面,該致冷裝置340可進一步降低上述熱電轉換裝置330之低溫端之溫度,使高溫端和低溫端之溫差增大,從而進一步提高熱電發電裝置300之熱電轉換效率。該致冷裝置340之冷卻方式可為 水冷、風冷或散熱片自然冷卻等。本實施例為一水冷裝置。 The cooling device 340 is disposed on the surface of the substrate 312 outside the cavity 318 under the collector 320, and the cooling device 340 can further reduce the temperature of the low temperature end of the thermoelectric conversion device 330, so that the high temperature end and the low temperature end The temperature difference is increased to further increase the thermoelectric conversion efficiency of the thermoelectric generation device 300. The cooling device 340 can be cooled by Water cooling, air cooling or natural cooling of the heat sink. This embodiment is a water cooling device.

本實施例提供之熱電發電裝置300,由於吸熱結構314為奈米碳管結構,其於可見波段之吸收率可達到98%以上,另,由於該熱電發電裝置300之吸熱結構314及熱電轉換裝置330均設置於一真空腔318中,減少了氣體分子之運動傳熱和傳導散熱,從而升高了熱電轉換裝置330之高溫端溫度,經測量可達到100℃左右,從而使得熱能向電能之轉換效率Φmax提高。 In the thermoelectric power generation device 300 provided in this embodiment, since the heat absorption structure 314 is a carbon nanotube structure, the absorption rate in the visible band can reach 98% or more, and the heat absorption structure 314 and the thermoelectric conversion device of the thermoelectric generation device 300 330 is disposed in a vacuum chamber 318, which reduces the movement heat transfer and conduction heat dissipation of the gas molecules, thereby increasing the temperature of the high temperature end of the thermoelectric conversion device 330, and measuring up to about 100 ° C, thereby converting the thermal energy to the electric energy. The efficiency Φmax is increased.

本實施例之熱電發電裝置300可僅包括集熱器320及熱電轉換裝置330,且該集熱器320可僅包括該吸熱結構314,將該吸熱結構314直接設置於該熱電轉換裝置330之第一電極332便可實現本發明之目的。 The thermoelectric power generation device 300 of the present embodiment may include only the heat collector 320 and the thermoelectric conversion device 330, and the heat collector 320 may include only the heat absorption structure 314, and the heat absorption structure 314 may be directly disposed on the thermoelectric conversion device 330. An electrode 332 can achieve the object of the present invention.

請參閱圖7,本發明第二實施例提供一種熱電發電裝置400,該熱電發電裝置400包括一集熱器420、一熱電轉換裝置430及一致冷裝置440。該集熱器320可用於收集太陽能,並將所收集之太陽能傳遞給熱電轉換裝置330,該致冷裝置340與熱電轉換裝置330相對設置。 Referring to FIG. 7 , a second embodiment of the present invention provides a thermoelectric generation device 400 . The thermoelectric generation device 400 includes a heat collector 420 , a thermoelectric conversion device 430 , and a uniform cooling device 440 . The collector 320 can be used to collect solar energy and transfer the collected solar energy to the thermoelectric conversion device 330, which is disposed opposite the thermoelectric conversion device 330.

該集熱器420包括一上基板410、一下基板412、一邊框支架416、複數吸熱結構414、一第一選擇性透過層422、一第二選擇性透過層424及一承載體426。該上基板410和該下基板412相對設置。該邊框支架416設置於該上基板410和下基板412之間。該上基板410、下基板412及邊框支架416共同構成一空腔418。該吸熱結構414設置於空腔418內部。該承載體426用於承載該吸熱結構414並與該吸熱結構414接觸設置。該第一選擇性透過層422設置於上基板410位於空腔418內之表面,該第二選擇性透過層424設置於下基 板412位於空腔418內之表面。 The heat collector 420 includes an upper substrate 410, a lower substrate 412, a frame support 416, a plurality of heat absorption structures 414, a first selective transmission layer 422, a second selective transmission layer 424, and a carrier 426. The upper substrate 410 and the lower substrate 412 are disposed opposite to each other. The bezel bracket 416 is disposed between the upper substrate 410 and the lower substrate 412. The upper substrate 410, the lower substrate 412 and the frame holder 416 together form a cavity 418. The heat absorbing structure 414 is disposed inside the cavity 418. The carrier 426 is configured to carry the heat absorbing structure 414 and is disposed in contact with the heat absorbing structure 414. The first selective transmission layer 422 is disposed on the surface of the upper substrate 410 in the cavity 418, and the second selective transmission layer 424 is disposed on the lower base. Plate 412 is located on the surface within cavity 418.

該熱電轉換裝置430設置於集熱器420之空腔418內,並設置於該第二選擇性透過層424和承載體426之間,用於支撐該承載體426和吸熱結構414。該熱電轉換裝置430包括至少一個第一電極432、至少一個第二電極434、P型熱電結構436及N型熱電結構438,該第一電極432與吸熱結構414相對且通過該承載體426間隔設置,該第二電極434與集熱器420之第二選擇性透過層424接觸設置,該P型熱電結構436和N型熱電結構438交替間隔排列並通過第一電極432和第二電極434交替串聯。 The thermoelectric conversion device 430 is disposed in the cavity 418 of the collector 420 and disposed between the second selective transmission layer 424 and the carrier 426 for supporting the carrier 426 and the heat absorption structure 414. The thermoelectric conversion device 430 includes at least one first electrode 432, at least one second electrode 434, a P-type thermoelectric structure 436, and an N-type thermoelectric structure 438. The first electrode 432 is opposite to and through the carrier 426. The second electrode 434 is disposed in contact with the second selective transmission layer 424 of the collector 420. The P-type thermoelectric structure 436 and the N-type thermoelectric structure 438 are alternately arranged and alternately connected in series through the first electrode 432 and the second electrode 434. .

本實施例提供之熱電發電裝置400與上述第一實施例提供之熱電發電裝置300之區別在於,本實施之熱電發電裝置400包括複數個分離的吸熱結構414,其中每個吸熱結構414對應設置於熱電轉換裝置430之一個第一電極432之表面。 The thermoelectric power generation device 400 provided in this embodiment is different from the thermoelectric power generation device 300 provided in the first embodiment in that the thermoelectric generation device 400 of the present embodiment includes a plurality of separate heat absorption structures 414, wherein each heat absorption structure 414 is correspondingly disposed on The surface of a first electrode 432 of the thermoelectric conversion device 430.

請參閱圖8,本發明第三實施例提供一種熱電發電裝置500,該熱電發電裝置500包括一集熱器520、一熱電轉換裝置530、一支撐元件550及一致冷裝置540。該集熱器520與該熱電轉換裝置530相對設置,該集熱器520可用於收集太陽能並將所收集之太陽能傳遞給熱電轉換裝置530。該支撐元件550設置於該熱電轉換裝置530與該致冷裝置540之間,並用於支撐該熱電轉換裝置530。該致冷裝置540設置於該支撐元件550遠離熱電轉換裝置530之表面。 Referring to FIG. 8 , a third embodiment of the present invention provides a thermoelectric generation device 500 . The thermoelectric generation device 500 includes a heat collector 520 , a thermoelectric conversion device 530 , a supporting component 550 , and a uniform cooling device 540 . The collector 520 is disposed opposite the thermoelectric conversion device 530, and the collector 520 can be used to collect solar energy and transfer the collected solar energy to the thermoelectric conversion device 530. The support member 550 is disposed between the thermoelectric conversion device 530 and the refrigeration device 540 and is used to support the thermoelectric conversion device 530. The cooling device 540 is disposed on a surface of the support member 550 away from the thermoelectric conversion device 530.

該集熱器520包括一上基板510、一下基板512、一邊框支架516一吸熱結構514、一第一選擇性透過層522及一第二選擇性透過層524。該上基板510和該下基板512相對設置。該邊框支架516設置 於該上基板510和下基板512之間。該上基板510、下基板512及邊框支架516共同構成一空腔518。該吸熱結構514設置於空腔518內且與第二選擇性透過層524接觸設置。該第一選擇性透過層522設置於上基板510位於空腔518內之表面,該第二選擇性透過層524設置於下基板512與該吸熱結構514之間。 The heat collector 520 includes an upper substrate 510, a lower substrate 512, a frame support 516, a heat absorption structure 514, a first selective transmission layer 522, and a second selective transmission layer 524. The upper substrate 510 and the lower substrate 512 are opposite to each other. The frame bracket 516 is set Between the upper substrate 510 and the lower substrate 512. The upper substrate 510, the lower substrate 512 and the frame holder 516 together form a cavity 518. The heat absorbing structure 514 is disposed in the cavity 518 and disposed in contact with the second selective transmission layer 524. The first selective transmission layer 522 is disposed on a surface of the upper substrate 510 located in the cavity 518 , and the second selective transmission layer 524 is disposed between the lower substrate 512 and the heat absorption structure 514 .

該熱電轉換裝置530設置於下基板512位於空腔518外之表面,該熱電轉換裝置530包括:至少一個第一電極532,該第一電極532與集熱器520之下基板512位於空腔518外之表面接觸;至少一個第二電極534,該第二電極534與第一電極532相對設置;P型熱電結構536及N型熱電結構538,該P型熱電結構536和N型熱電結構538交替間隔排列並通過第一電極532和第二電極534交替串聯。 The thermoelectric conversion device 530 is disposed on a surface of the lower substrate 512 outside the cavity 518. The thermoelectric conversion device 530 includes: at least one first electrode 532, and the first electrode 532 and the lower substrate 512 of the collector 520 are located in the cavity 518. The outer surface contact; the at least one second electrode 534, the second electrode 534 is disposed opposite to the first electrode 532; the P-type thermoelectric structure 536 and the N-type thermoelectric structure 538, the P-type thermoelectric structure 536 and the N-type thermoelectric structure 538 alternate They are arranged at intervals and alternately connected in series by the first electrode 532 and the second electrode 534.

該支撐元件550用於支撐熱電轉換裝置530,且可進一步固定該熱電轉換裝置530之P型熱電結構536及N型熱電結構538,其材料為玻璃、陶瓷或導熱性較好之材料,如銅或鋁等。 The support member 550 is configured to support the thermoelectric conversion device 530, and further fix the P-type thermoelectric structure 536 and the N-type thermoelectric structure 538 of the thermoelectric conversion device 530, and the material thereof is glass, ceramic or a material having good thermal conductivity, such as copper. Or aluminum, etc.

該致冷裝置540可進一步降低上述熱電轉換裝置530之低溫端之溫度,使高溫端和低溫端之溫差增大,從而進一步提高熱電發電裝置500之熱電轉換效率。該致冷裝置540之冷卻方式可為水冷、風冷或散熱片自然冷卻等。本實施例中,該致冷裝置540為水冷裝置。另,該致冷裝置540可直接代替支撐元件542,直接設置於上述熱電轉換裝置530之第二電極534。 The refrigeration device 540 can further reduce the temperature of the low temperature end of the thermoelectric conversion device 530 to increase the temperature difference between the high temperature end and the low temperature end, thereby further improving the thermoelectric conversion efficiency of the thermoelectric generation device 500. The cooling device 540 can be cooled by water cooling, air cooling, or natural cooling of the heat sink. In this embodiment, the refrigeration device 540 is a water cooling device. In addition, the refrigeration device 540 can be directly disposed on the second electrode 534 of the thermoelectric conversion device 530 instead of the support member 542.

本實施例與第一實施例基本相同,其區別在於,本實施例之熱電轉換裝置530設置於該集熱器520之外部,該吸熱結構514直接與該第二選擇性透過層524接觸設置。 The present embodiment is substantially the same as the first embodiment, except that the thermoelectric conversion device 530 of the present embodiment is disposed outside the heat collector 520, and the heat absorption structure 514 is directly disposed in contact with the second selective transmission layer 524.

請參閱圖9,本發明第四實施例提供一種熱電發電裝置600,該熱電發電裝置600包括一集熱器620、一熱電轉換裝置630、一支撐元件650及一致冷裝置640。該集熱器620與該熱電轉換裝置630相對設置。該集熱器620與該熱電轉換裝置630相對設置。該集熱器620可用於收集太陽能,並將所收集之太陽能傳遞給熱電轉換裝置630。該支撐元件650設置於該熱電轉換裝置630與該致冷裝置640之間,並用於支撐該熱電轉換裝置630。該致冷裝置640設置於該支撐元件650。 Referring to FIG. 9 , a fourth embodiment of the present invention provides a thermoelectric generation device 600 . The thermoelectric generation device 600 includes a heat collector 620 , a thermoelectric conversion device 630 , a supporting component 650 , and a uniform cooling device 640 . The heat collector 620 is disposed opposite to the thermoelectric conversion device 630. The heat collector 620 is disposed opposite to the thermoelectric conversion device 630. The collector 620 can be used to collect solar energy and transfer the collected solar energy to the thermoelectric conversion device 630. The support member 650 is disposed between the thermoelectric conversion device 630 and the refrigeration device 640 and is used to support the thermoelectric conversion device 630. The refrigeration device 640 is disposed on the support member 650.

該集熱器620包括一上基板610、一下基板612、一邊框支架616、複數吸熱結構614、一第一選擇性透過層622和一第二選擇性透過層624。該上基板610和該下基板612相對設置,該邊框支架616設置於該上基板610和下基板612之間,該上基板610、下基板612及邊框支架616共同構成一空腔618,該吸熱結構614設置於該空腔618內並與該第二選擇性透過層624接觸設置,該第一選擇性透過層622設置於上基板610位於空腔618內之表面,該第二選擇性透過層624設置於下基板612與吸熱結構614之間。 The heat collector 620 includes an upper substrate 610, a lower substrate 612, a frame support 616, a plurality of heat absorption structures 614, a first selective transmission layer 622, and a second selective transmission layer 624. The upper substrate 610 and the lower substrate 612 are disposed opposite to each other. The frame support 616 is disposed between the upper substrate 610 and the lower substrate 612. The upper substrate 610, the lower substrate 612 and the frame support 616 together form a cavity 618. The heat absorption structure 614 is disposed in the cavity 618 and is disposed in contact with the second selective transmission layer 624. The first selective transmission layer 622 is disposed on a surface of the upper substrate 610 located in the cavity 618, and the second selective transmission layer 624 It is disposed between the lower substrate 612 and the heat absorbing structure 614.

該熱電轉換裝置630設置於下基板612位於空腔618外之表面。該熱電轉換裝置630包括:至少一個第一電極632,該第一電極632與集熱器620之下基板612之外表面接觸;至少一個第二電極634,該第二電極634與第一電極632相對設置;P型熱電結構636及N型熱電結構638,該P型熱電結構636和N型熱電結構638交替間隔排列並通過第一電極632和第二電極634交替串聯。 The thermoelectric conversion device 630 is disposed on a surface of the lower substrate 612 outside the cavity 618. The thermoelectric conversion device 630 includes: at least one first electrode 632 that is in contact with an outer surface of the substrate 612 under the collector 620; at least one second electrode 634, the second electrode 634 and the first electrode 632 The P-type thermoelectric structure 636 and the N-type thermoelectric structure 638 are alternately arranged and alternately connected in series through the first electrode 632 and the second electrode 634.

本實施例與上述第三實施例之熱電發電裝置500之區別在於,本實施例之熱電發電裝置500包括複數吸熱結構614,該複數吸熱結 構614於一個平面內間隔設置,並且每個吸熱結構614正對熱電轉換裝置630之一個第一電極632設置。這種設置方式既可保證每個第一電極均與吸熱結構保持良好之熱接觸,又可節省奈米碳管之消耗,節約成本。 The difference between this embodiment and the thermoelectric generation device 500 of the third embodiment described above is that the thermoelectric generation device 500 of the present embodiment includes a plurality of heat absorption structures 614, and the plurality of heat absorption nodes The structures 614 are spaced apart in one plane, and each heat absorbing structure 614 is disposed adjacent to a first electrode 632 of the thermoelectric conversion device 630. This arrangement ensures that each of the first electrodes maintains good thermal contact with the heat absorbing structure, and also saves the consumption of the carbon nanotubes and saves costs.

該熱電發電裝置採用奈米碳管結構作吸熱結構,利用奈米碳管結構良好之吸熱特性,可提高集熱器之能量吸收效率,從而進一步提高了熱電轉換裝置高溫端之溫度,使得該熱電發電裝置之熱電轉換效率較高。 The thermoelectric power generation device adopts a carbon nanotube structure as an endothermic structure, and the heat absorption characteristic of the carbon nanotube structure can improve the energy absorption efficiency of the heat collector, thereby further increasing the temperature of the high temperature end of the thermoelectric conversion device, so that the thermoelectricity The thermoelectric conversion efficiency of the power generation device is high.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

300‧‧‧熱電發電裝置 300‧‧‧Thermal power generation unit

310‧‧‧上基板 310‧‧‧Upper substrate

312‧‧‧下基板 312‧‧‧lower substrate

314‧‧‧吸熱結構 314‧‧‧heat absorbing structure

316‧‧‧邊框支架 316‧‧‧Border bracket

318‧‧‧空腔 318‧‧‧ cavity

320‧‧‧集熱器 320‧‧‧ Collector

322‧‧‧第一選擇性透過層 322‧‧‧First selective transmission layer

324‧‧‧第二選擇性透過層 324‧‧‧Second selective transmission layer

326‧‧‧承載體 326‧‧‧Carrier

330‧‧‧熱電轉換裝置 330‧‧‧Thermal conversion device

332‧‧‧第一電極 332‧‧‧First electrode

334‧‧‧第二電極 334‧‧‧second electrode

336‧‧‧P型熱電結構 336‧‧‧P type thermoelectric structure

338‧‧‧N型熱電結構 338‧‧‧N type thermoelectric structure

340‧‧‧致冷裝置 340‧‧‧ Refrigeration device

Claims (22)

一種熱電發電裝置,其包括:一集熱器,所述集熱器包括至少一吸熱結構;一熱電轉換裝置,所述熱電轉換裝置與該集熱器之吸熱結構相對設置;其改良在於,所述吸熱結構包括至少一奈米碳管結構,該奈米碳管結構為一光熱轉換器件,用於將太陽光轉化為熱能,並將轉化的熱能傳遞給該熱電轉換裝置。 A thermoelectric power generation device comprising: a heat collector, the heat collector comprising at least one heat absorbing structure; a thermoelectric conversion device, the thermoelectric conversion device being disposed opposite to the heat absorbing structure of the heat collector; The heat absorbing structure comprises at least one carbon nanotube structure, which is a photothermal conversion device for converting sunlight into heat energy and transferring the converted heat energy to the thermoelectric conversion device. 如請求項1所述熱電發電裝置,其中,該奈米碳管結構為至少一奈米碳管陣列、一奈米碳管膜、一奈米碳管線狀結構或一奈米碳管膜和奈米碳管線狀結構之組合。 The thermoelectric power generation device according to claim 1, wherein the carbon nanotube structure is at least one carbon nanotube array, one carbon nanotube membrane, one nano carbon pipeline structure or one carbon nanotube membrane and nai A combination of rice carbon pipeline structures. 如請求項2所述熱電發電裝置,其中,該奈米碳管膜包括複數奈米碳管,該複數奈米碳管首尾相連且沿一個方向或複數方向擇優取向排列。 The thermoelectric power generation device according to claim 2, wherein the carbon nanotube film comprises a plurality of carbon nanotubes, and the plurality of carbon nanotubes are connected end to end and arranged in a preferred orientation in one direction or in a plurality of directions. 如請求項2所述熱電發電裝置,其中,該奈米碳管膜包括複數奈米碳管,該複數奈米碳管通過凡德瓦爾力相互纏繞,或通過凡德瓦爾力相互吸引且平行於奈米碳管結構之表面。 The thermoelectric power generation device according to claim 2, wherein the carbon nanotube film comprises a plurality of carbon nanotubes intertwined by van der Waals force, or mutually attracted by van der Waals force and parallel to The surface of the carbon nanotube structure. 如請求項2所述熱電發電裝置,其中,該奈米碳管結構為一個奈米碳管線狀結構,該奈米碳管線狀結構折疊或纏繞成層狀結構。 The thermoelectric power generation device according to claim 2, wherein the carbon nanotube structure is a nanocarbon line-like structure, and the nanocarbon line-like structure is folded or wound into a layered structure. 如請求項2所述熱電發電裝置,其中,該奈米碳管結構為複數奈米碳管線狀結構,該複數奈米碳管線狀結構相互平行設置、交叉設置或編織成網狀結構。 The thermoelectric power generation device according to claim 2, wherein the carbon nanotube structure is a plurality of carbon-carbon line-like structures, and the plurality of carbon-carbon line-like structures are disposed in parallel with each other, cross-arranged or woven into a network structure. 如請求項1所述熱電發電裝置,其中,該吸熱結構進一步包括一基體,該奈米碳管結構均勻分佈於該基體中。 The thermoelectric power generation device according to claim 1, wherein the heat absorbing structure further comprises a substrate in which the carbon nanotube structure is uniformly distributed. 一種熱電發電裝置,其包括, 一集熱器,所述集熱器包括一空腔及至少一吸熱結構,該吸熱結構設置於該空腔之內部;一熱電轉換裝置,所述熱電轉換裝置設置於該空腔之內部,並且該熱電轉換裝置與該集熱器之吸熱結構相對設置;其改良在於,所述吸熱結構包括至少一奈米碳管結構,該奈米碳管結構為一光熱轉換器件,用於將太陽光轉化為熱能,並將轉化的熱能傳遞給該熱電轉換裝置。 A thermoelectric generation device, comprising a heat collector comprising a cavity and at least one heat absorbing structure, the heat absorbing structure being disposed inside the cavity; a thermoelectric conversion device, the thermoelectric conversion device being disposed inside the cavity, and the heat collector The thermoelectric conversion device is disposed opposite to the heat absorbing structure of the heat collector; and the improvement is that the heat absorbing structure comprises at least one carbon nanotube structure, wherein the carbon nanotube structure is a photothermal conversion device for converting sunlight into Thermal energy and transfer of the converted thermal energy to the thermoelectric conversion device. 如請求項8所述熱電發電裝置,其中,所述熱電轉換裝置包括複數第一電極,複數第二電極,複數P型熱電結構,及複數N型熱電結構,該複數P型熱電結構和複數N型熱電結構交替間隔排列並通過第一電極和第二電極交替串聯,該吸熱結構與該熱電轉換裝置之第一電極相對設置。 The thermoelectric power generation device according to claim 8, wherein the thermoelectric conversion device includes a plurality of first electrodes, a plurality of second electrodes, a plurality of P-type thermoelectric structures, and a plurality of N-type thermoelectric structures, the plurality of P-type thermoelectric structures and a plurality of N The thermoelectric structures are alternately arranged and alternately connected in series by the first electrode and the second electrode, and the heat absorbing structure is disposed opposite to the first electrode of the thermoelectric conversion device. 如請求項9所述熱電發電裝置,其中,所述集熱器包括複數個分離的吸熱結構,且每個吸熱結構分別與熱電轉換裝置之一個第一電極相對且與之熱耦合。 The thermoelectric power generation device according to claim 9, wherein the heat collector comprises a plurality of separate heat absorbing structures, and each of the heat absorbing structures is opposite to and thermally coupled to a first electrode of the thermoelectric conversion device. 如請求項9所述熱電發電裝置,其中,該熱電發電裝置進一步包括一承載體,該承載體設置於所述吸熱結構與所述第一電極之間,並與該吸熱結構與第一電極熱耦合。 The thermoelectric power generation device of claim 9, wherein the thermoelectric generation device further comprises a carrier disposed between the heat absorbing structure and the first electrode, and thermally coupled to the heat absorbing structure and the first electrode coupling. 如請求項9所述熱電發電裝置,其中,該熱電發電裝置進一步包括一致冷裝置,該致冷裝置設置於該集熱器位於空腔外之表面,且與該熱電轉換裝置之第二電極相對設置。 The thermoelectric power generation device of claim 9, wherein the thermoelectric generation device further comprises a coherent cooling device disposed on a surface of the collector outside the cavity and opposite to the second electrode of the thermoelectric conversion device Settings. 如請求項8所述熱電發電裝置,其中,該熱電發電裝置進一步包括一光選擇性透過層,該光選擇性透過層設置於集熱器位於空腔內之表面,並與該吸熱結構相對且間隔設置,用於阻擋吸熱結構向空腔外輻射遠紅外線。 The thermoelectric power generation device of claim 8, wherein the thermoelectric generation device further comprises a light selective transmission layer disposed on a surface of the heat collector located in the cavity and opposite to the heat absorption structure The spacing is arranged to block the heat absorbing structure from radiating far infrared rays outside the cavity. 一種熱電發電裝置,其包括, 一集熱器,該集熱器包括一空腔及至少一吸熱結構,所述吸熱結構設置於所述空腔的內部;一熱電轉換裝置,該熱電轉換裝置設置於所述集熱器的空腔外,並且該熱電轉換裝置與該集熱器的吸熱結構熱耦合;其改良在於,所述吸熱結構包括至少一奈米碳管結構,該奈米碳管結構為一光熱轉換器件,用於將太陽光轉化為熱能,並將轉化的熱能傳遞給該熱電轉換裝置。 A thermoelectric generation device, comprising a heat collector comprising a cavity and at least one heat absorbing structure, the heat absorbing structure being disposed inside the cavity; a thermoelectric conversion device disposed in the cavity of the heat collector And the thermoelectric conversion device is thermally coupled to the heat absorbing structure of the heat collector; the improvement is that the heat absorbing structure comprises at least one carbon nanotube structure, and the carbon nanotube structure is a photothermal conversion device for The sunlight is converted into heat and the converted heat is transferred to the thermoelectric conversion device. 一種熱電發電裝置,其包括:一集熱器,該集熱器包括一吸熱結構;一熱電轉換裝置,該熱電轉換裝置熱耦合於所述集熱器的吸熱結構;其改良在於,所述吸熱結構包括一奈米碳管膜狀結構,該奈米碳管膜狀結構包括多個奈米碳管,該奈米碳管結構為一光熱轉換器件,用於將太陽光轉化為熱能,並將轉化的熱能傳遞給該熱電轉換裝置。 A thermoelectric power generation device comprising: a heat collector comprising a heat absorbing structure; a thermoelectric conversion device thermally coupled to the heat absorbing structure of the heat collector; and the improvement is that the heat absorption The structure comprises a carbon nanotube film structure comprising a plurality of carbon nanotubes, wherein the carbon nanotube structure is a photothermal conversion device for converting sunlight into heat energy, and The converted thermal energy is transferred to the thermoelectric conversion device. 如請求項15所述的熱電發電裝置,其中,所述多個奈米碳管沿一個方向擇優取向排列且平行於奈米碳管膜狀結構的表面。 The thermoelectric generation device according to claim 15, wherein the plurality of carbon nanotubes are arranged in a preferred orientation in one direction and are parallel to a surface of the carbon nanotube film-like structure. 如請求項15所述的熱電發電裝置,其中,所述多個奈米碳管沿一個方向擇優取向排列且垂直於奈米碳管膜狀結構的表面。 The thermoelectric generation device according to claim 15, wherein the plurality of carbon nanotubes are arranged in a preferred orientation in one direction and perpendicular to a surface of the carbon nanotube film-like structure. 如請求項15所述的熱電發電裝置,其中,所述多個奈米碳管通過范德華力相互吸引形成多個奈米碳管線,該奈米碳管線相互平行設置、交叉設置或編織成網狀結構。 The thermoelectric generation device according to claim 15, wherein the plurality of carbon nanotubes are mutually attracted by van der Waals force to form a plurality of nanocarbon pipelines which are arranged in parallel, crosswise or woven into a mesh shape. structure. 如請求項15所述的熱電發電裝置,其中,所述奈米碳管膜狀結構進一步包括一基體,所述奈米碳管均勻分佈於該基體中。 The thermoelectric generation device according to claim 15, wherein the carbon nanotube film structure further comprises a matrix in which the carbon nanotubes are uniformly distributed. 如請求項15所述的熱電發電裝置,其中,所述多個奈米碳管排列方向不固定,且沿各方向排列的奈米碳管的數量基本相等。 The thermoelectric generation device according to claim 15, wherein the plurality of carbon nanotubes are arranged in an unfixed direction, and the number of the carbon nanotubes arranged in each direction is substantially equal. 如請求項20所述的熱電發電裝置,其中,所述多個奈米碳管通過范德華 力相互纏繞、相互吸引且大致平行於該奈米碳管膜狀結構的表面。 The thermoelectric generation device of claim 20, wherein the plurality of carbon nanotubes pass through Van der Waals The forces are intertwined, mutually attracted, and substantially parallel to the surface of the carbon nanotube film structure. 如請求項15所述的熱電發電裝置,其中,所述奈米碳管膜狀結構為各向同性。 The thermoelectric generation device according to claim 15, wherein the carbon nanotube film structure is isotropic.
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