CN109087870A - Silicon chip cleaning device and its cleaning method - Google Patents
Silicon chip cleaning device and its cleaning method Download PDFInfo
- Publication number
- CN109087870A CN109087870A CN201810768670.6A CN201810768670A CN109087870A CN 109087870 A CN109087870 A CN 109087870A CN 201810768670 A CN201810768670 A CN 201810768670A CN 109087870 A CN109087870 A CN 109087870A
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- cleaning
- silicon chip
- silicon wafer
- silicon
- back side
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of silicon chip cleaning devices, comprising: gas generation mechanism, protection mechanism, cleaning chamber, fixed mechanism and cleaning solution fill mechanism；Front side of silicon wafer passes downwardly through fixed mechanism and is fixed in cleaning chamber; gas generation mechanism connects protection mechanism; protection mechanism is located at below fixed mechanism; protection mechanism can be moved up and down in cleaning chamber close to or far from silicon wafer; gas generation mechanism conveys protective gas to front side of silicon wafer by protection mechanism, and cleaning solution filling apparatus is arranged above silicon wafer；Pressure initiation caused by the cleaning solution of pressure caused by gas generation mechanism conveying protective gas and silicon chip back side balances in cleaning chamber, and cleaning solution exists only in silicon chip back side and silicon chip side or cleaning solution exists only in silicon chip back side.The present invention has also just opened a kind of silicon wafer cleaning method.The present invention is able to achieve selective cleaning (silicon chip back side and/or silicon chip side) by adjusting the flow of protective gas, can improve Wafer Cleaning efficiency.
Description
Technical field
The present invention relates to semiconductor field, the silicon chip cleaning device used when more particularly to a kind of silicon wafer chemical cleaning.
The invention further relates to the silicon wafer cleaning methods used when a kind of silicon wafer chemical cleaning.
Background technique
Silicon wafer must be cleaned strictly in semiconductor devices production.Micropollution also results in component failure.The purpose of cleaning
It is to remove surface contamination impurity, including organic matter and inorganic matter.These impurity some have with state of atom or ionic condition
In the form of a film or particle form is present in silicon chip surface.It will lead to various defects.Remove pollution method have physical cleaning and
Two kinds of chemical cleaning.
With the development of large scale integrated circuit, the continuous improvement of integrated level, the continuous reduction of line width, to the quality of silicon wafer
It is required that it is also higher and higher, it is especially more and more tighter to silicon polished surface quality requirements.This is primarily due to polished silicon wafer surface
Particle and metal impurities stain and can seriously affect the quality and yield rate of device, 64,000,000 DRAM for being 0.35 μm for line width
Device, the critical particle size for influencing circuit is 0.06 μm, the metallic contaminants from surface of polished silicon wafer stain should all less than 5 ×
1016at/cm2, granule number of the polished silicon wafer surface greater than 0.2 μm should be less than 20/piece.In current integrated circuit production, by
In silicon polished surface contamination problem, still there is 50% or more material to be lost.
In silicon transistor and integrated circuit production, almost every procedure has the problem of Wafer Cleaning, Wafer Cleaning
Quality has serious influence to device performance, deals with improperly, and whole silicon wafers may be made to scrap, and can not be produced into semiconductor devices,
Or the device performance manufactured is inferior, stability and reliability are very poor.Wafer Cleaning method from silicon wafer either for processing
People, or for be engaged in semiconductor devices production people for suffer from important meaning
The impurity being adsorbed on silicon chip surface can be divided into three kinds of molecule-type, ionic and atom type situations.Wherein molecule-type
Adsorption capacity between impurity and silicon chip surface is weaker, removes this kind of foreign particle and is easier.Their more category grease type impurity, tool
There is hydrophobic feature, there is masking action for removing ionic and atomic impurity.
Therefore when carrying out chemical cleaning to silicon wafer, they should be removed first clean.Ionic and atom type absorption
Impurity belong to chemisorption impurity, adsorption capacity is all relatively strong.Under normal circumstances, the amount of atom type adsorbing contaminant is smaller, because
This first disposes ionic adsorbing contaminant in chemical cleaning, then removes the type impurity ion and atomic impurity of remaining again.
Silicon wafer finally rushes to high purity deionized water Xian is clean, then heats drying or the silicon wafer of clean surface just can be obtained in drying.
As the requirement to surface cleanness improves, it is clear that cleaning process also gradually by traditional slot type cleaning is changed into monolithic
It washes.Compared with the cleaning of traditional slot type, advantage is that technique cleanliness is higher for monolithic cleaning.Disadvantage is that output is few, particularly with
For the back side of silicon wafer and crystal edge, the cleaning of the back side and crystal edge is all in individual board operation, which can be simultaneously
The back side and crystal edge (wafer side wall) to silicon wafer are cleaned, to effectively improve output.
Summary of the invention
The technical problem to be solved in the present invention is to provide can be (brilliant to silicon chip back side and/or side wall when a kind of silicon wafer chemical cleaning
Side) silicon chip cleaning device that is cleaned.
It is clear the present invention also provides when a kind of silicon wafer chemical cleaning silicon wafer can be carried out to silicon chip back side and/or side wall (crystal edge)
Washing method.
Silicon chip cleaning device provided by the invention includes: gas generation mechanism, protection mechanism, cleaning chamber, fixed mechanism
Mechanism is filled with cleaning solution；
Front side of silicon wafer passes downwardly through fixed mechanism and is fixed in cleaning chamber, and gas generation mechanism connects protection mechanism, protects
Shield mechanism is located at below fixed mechanism, and protection mechanism can be moved up and down in cleaning chamber close to or far from silicon wafer, and gas generates
Mechanism conveys protective gas to front side of silicon wafer by protection mechanism, and cleaning solution filling apparatus is arranged above silicon wafer；
The cleaning solution of pressure caused by gas generation mechanism conveying protective gas and silicon chip back side is produced in cleaning chamber
Raw pressure initiation balance, cleaning solution exists only in silicon chip back side and silicon chip side or cleaning solution exists only in silicon chip back side.
It is further improved the silicon chip cleaning device, protection mechanism is with stomata cover sheet.
It is further improved the silicon chip cleaning device, stomata is evenly distributed on cover sheet.
It is further improved the silicon chip cleaning device, stomata forms multiple concentric stomata rings on cover sheet.
It is further improved the silicon chip cleaning device, fixed mechanism is at least three pin, and silicon wafer is fixed by pin.
It is further improved the silicon chip cleaning device, protective gas is N2。
It is further improved protective gas N2Flow is 80ml/min~120ml/min.
The present invention provides a kind of silicon wafer cleaning method, comprising the following steps:
1) front side of silicon wafer is downwardly fixed in a cleaning chamber；
2) to the protective gas of front side of silicon wafer conveying predetermined amount of flow；
3) cleaning solution is filled in silicon chip back side；
4) when cleaning solution reaches desire cleaning parts, holding shield gas flow rate makes pressure and silicon wafer caused by protective gas
The balance of pressure initiation caused by the cleaning solution at the back side；
5) implement silicon chip back side and silicon chip side cleaning or Wafer Cleaning.
It is further improved the silicon wafer cleaning method, protective gas is N2。
It is further improved the silicon wafer cleaning method, protective gas N2Flow is 80ml/min~120ml/min.
Logical pass downwardly through front side of silicon wafer of the present invention is fixed in cleaning chamber, gas generation mechanism by protection mechanism to
Front side of silicon wafer conveys protective gas, and cleaning solution filling apparatus is arranged above silicon wafer.Silicon wafer and protection structure, protective gas and clear
Washing lotion forms opposite closed structure each other in cleaning chamber.Gas generation mechanism conveys protective gas institute in cleaning chamber
The balance of pressure initiation caused by the pressure of generation and the cleaning solution of silicon chip back side.It is adjustable by the flow of regulating gas
The position of cleaning solution.If desired the cleaning silicon chip back side and side, gas flow are assumed to be first flow, are made clearly by pressure balance
Washing lotion exists only in silicon chip back side and silicon chip side, realizes the cleaning to the silicon chip cleaning liquid back side and side.If only needing to clean
Silicon chip back side then increases shield gas flow rate with respect to protective gas first flow, is lifted cleaning solution by gas pressure, there is only
In silicon chip back side (the gap protected gas i.e. between silicon chip side and cleaning chamber surrounds).The present invention is by adjusting protection gas
The flow of body is able to achieve selective cleaning (silicon chip back side and/or silicon chip side), can improve Wafer Cleaning efficiency.
Detailed description of the invention
Present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:
Fig. 1 is overall structure of the present invention.
Fig. 2 is protection mechanism schematic structural diagram of the first embodiment of the present invention.
Fig. 3 is silicon wafer cleaning method first embodiment flow diagram of the present invention.
Description of symbols
Gas generation mechanism 1
Protection mechanism 2
Cleaning chamber 3
Fixed mechanism 4
Cleaning solution 5
Stomata 6
Specific embodiment
As shown in Figure 1, the present invention provides silicon chip cleaning device first embodiment, comprising: gas generation mechanism 1, protection machine
Structure 2, cleaning chamber 3, fixed mechanism 4 and cleaning solution fill mechanism (not shown)；
Silicon wafer (not shown) faces down to be fixed in cleaning chamber 3 by fixed mechanism 4, gas generation mechanism 1
Protection mechanism 2 is connected, protection mechanism 2 is located at 4 lower section of fixed mechanism, and protection mechanism 2 can move up and down close in cleaning chamber 3
Or far from silicon wafer, gas generation mechanism 1 conveys protective gas to front side of silicon wafer by protection mechanism 2, and cleaning solution filling apparatus is set
It sets above silicon wafer；
Gas generation mechanism 1 conveys the cleaning solution institute of pressure and silicon chip back side caused by protective gas in cleaning chamber 3
The pressure initiation of generation balances, and cleaning solution exists only in silicon chip back side and silicon chip side or cleaning solution exists only in silicon chip back side.
The present invention provides silicon chip cleaning device second embodiment, comprising: gas generation mechanism 1, protection mechanism 2, cleaning chamber
Body 3, fixed mechanism 4 and cleaning solution fill mechanism；
Front side of silicon wafer passes downwardly through fixed mechanism 4 and is fixed in cleaning chamber 3, and gas generation mechanism 1 connects protection mechanism
2, protection mechanism 2 is located at 4 lower section of fixed mechanism, and protection mechanism 2 can be moved up and down in cleaning chamber 3 close to or far from silicon wafer,
Gas generation mechanism 1 conveys protective gas to front side of silicon wafer by protection mechanism 2, and cleaning solution filling apparatus is arranged on silicon wafer
Side；
Gas generation mechanism 1 conveys the cleaning solution institute of pressure and silicon chip back side caused by protective gas in cleaning chamber 3
The pressure initiation of generation balances, and cleaning solution exists only in silicon chip back side and silicon chip side or cleaning solution exists only in silicon chip back side.
Wherein, protection mechanism 2 is with 6 cover sheet of stomata, and stomata 6 is evenly distributed on cover sheet.For example, being formed
Stomata array.
The present invention provides silicon chip cleaning device 3rd embodiment, comprising: gas generation mechanism 1, protection mechanism 2, cleaning chamber
Body 3, fixed mechanism 4 and cleaning solution fill mechanism；
Front side of silicon wafer passes downwardly through fixed mechanism 4 and is fixed in cleaning chamber 3, and gas generation mechanism 1 connects protection mechanism
2, protection mechanism 2 is located at 4 lower section of fixed mechanism, and protection mechanism 2 can be moved up and down in cleaning chamber 3 close to or far from silicon wafer,
Gas generation mechanism 1 conveys protective gas to front side of silicon wafer by protection mechanism 2, and cleaning solution filling apparatus is arranged on silicon wafer
Side；
Gas generation mechanism 1 conveys the cleaning solution institute of pressure and silicon chip back side caused by protective gas in cleaning chamber 3
The pressure initiation of generation balances, and cleaning solution exists only in silicon chip back side and silicon chip side or cleaning solution exists only in silicon chip back side.
Wherein, protection mechanism 2 is with 6 cover sheet of stomata, and stomata 6 is evenly distributed on cover sheet.The present embodiment
In, 49 stomatas 6 are provided on cover sheet, stomata 6 centered on a stomata, forms 3 concentric gas on cover sheet
Orifice ring.The quantity of stomata 6 can confirm according to the actual situation, meet stomata minimal physical rule (between stomata it is permitted most
Small distance) under the premise of, 6 quantity of stomata is more, and cleaning device is better to the protecting effect of front side of silicon wafer.
Fixed mechanism is at least three pin, and silicon wafer is fixed by pin.Fixed mechanism can also be commonly used by other realizes silicon
Piece is fixed, such as clip.
In the present embodiment, protective gas is N2, protective gas N2Flow is 80ml/min~120ml/min.Correspondingly, gas
Body flow should be adjusted according to the volume of cleaning solution, form cleaning solution and protective gas and balance, avoid wash liquid stream to silicon
Piece front.
As shown in figure 3, the present invention provides silicon wafer cleaning method first embodiment, comprising the following steps:
1) front side of silicon wafer is downwardly fixed in a cleaning chamber；
2) to the protective gas N of front side of silicon wafer conveying predetermined amount of flow2；
3) cleaning solution is filled in silicon chip back side；
4) reach the back side of silicon wafer and the side of silicon wafer when cleaning solution, keep protective gas N2Flow produces protective gas
The balance of pressure initiation caused by the cleaning solution of raw pressure and silicon chip back side；
5) so that cleaning solution is existed only in the back side of silicon wafer and the side of silicon wafer, implement silicon chip back side and silicon chip side cleaning.
The present invention provides silicon wafer cleaning method second embodiment, comprising the following steps:
1) front side of silicon wafer is downwardly fixed in a cleaning chamber；
2) to the protective gas N of front side of silicon wafer conveying predetermined amount of flow2；
3) cleaning solution is filled in silicon chip back side；
4) when cleaning solution reaches the back side of silicon wafer but does not flow to the side of silicon wafer, protective gas N is kept2Flow is
80ml/min~120ml/min makes pressure initiation caused by the cleaning solution of pressure and silicon chip back side caused by protective gas
Balance；
5) so that cleaning solution is existed only in the side with silicon wafer, implement silicon chip side cleaning.
When the present invention is implemented, if desired the cleaning silicon chip back side and side, gas flow are assumed to be first flow for example
80ml/min makes cleaning solution exist only in silicon chip back side and silicon chip side, realizes to the silicon chip cleaning liquid back side by pressure balance
With the cleaning of side.
If only needing the cleaning silicon chip back side, opposite protective gas first flow 80ml/min increases shield gas flow rate,
Such as flow increases to 120ml/min, makes pressure caused by the cleaning solution of pressure and silicon chip back side caused by protective gas
The position that power forms balance increases, and cleaning solution exists only in silicon chip back side (the gap quilt i.e. between silicon chip side and cleaning chamber
Protective gas surrounds).
Above by specific embodiment and embodiment, invention is explained in detail, but these are not composition pair
Limitation of the invention.Without departing from the principles of the present invention, those skilled in the art can also make many deformations and change
Into these also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of silicon chip cleaning device characterized by comprising gas generation mechanism, protection mechanism, cleaning chamber, fixed machine
Structure and cleaning solution fill mechanism；
Front side of silicon wafer passes downwardly through fixed mechanism and is fixed in cleaning chamber, and gas generation mechanism connects protection mechanism, protects machine
Structure is located at below fixed mechanism, and protection mechanism can be moved up and down in cleaning chamber close to or far from silicon wafer, gas generation mechanism
Protective gas is conveyed to front side of silicon wafer by protection mechanism, cleaning solution filling apparatus is arranged above silicon wafer；
In cleaning chamber caused by the cleaning solution of pressure caused by gas generation mechanism conveying protective gas and silicon chip back side
Pressure initiation balance, cleaning solution exists only in silicon chip back side and silicon chip side or cleaning solution exists only in silicon chip back side.
2. silicon chip cleaning device as described in claim 1, it is characterised in that: protection mechanism is with stomata cover sheet.
3. silicon chip cleaning device as claimed in claim 2, it is characterised in that: stomata is evenly distributed on cover sheet.
4. silicon chip cleaning device as claimed in claim 2, it is characterised in that: stomata forms multiple concentric gas on cover sheet
Orifice ring.
5. silicon chip cleaning device as described in claim 1, it is characterised in that: fixed mechanism is at least three pin, and silicon wafer passes through pin
It is fixed.
6. silicon chip cleaning device as described in claim 1, it is characterised in that: protective gas is N2.
7. silicon chip cleaning device as claimed in claim 6, it is characterised in that: protective gas N2 flow is 80ml/min~120ml/
min。
8. a kind of silicon wafer cleaning method, which comprises the following steps:
1) front side of silicon wafer is downwardly fixed in a cleaning chamber；
2) to the protective gas of front side of silicon wafer conveying predetermined amount of flow；
3) cleaning solution is filled in silicon chip back side；
4) when cleaning solution reaches desire cleaning parts, holding shield gas flow rate makes pressure and silicon chip back side caused by protective gas
Cleaning solution caused by pressure initiation balance；
5) implement silicon chip back side and silicon chip side cleaning or Wafer Cleaning.
9. silicon wafer cleaning method as claimed in claim 7, it is characterised in that: protective gas is N2.
10. silicon wafer cleaning method as claimed in claim 9, it is characterised in that: protective gas N2 flow be 80ml/min~
120ml/min。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810768670.6A CN109087870A (en) | 2018-07-13 | 2018-07-13 | Silicon chip cleaning device and its cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810768670.6A CN109087870A (en) | 2018-07-13 | 2018-07-13 | Silicon chip cleaning device and its cleaning method |
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| Publication Number | Publication Date |
|---|---|
| CN109087870A true CN109087870A (en) | 2018-12-25 |
Family
ID=64837784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810768670.6A Pending CN109087870A (en) | 2018-07-13 | 2018-07-13 | Silicon chip cleaning device and its cleaning method |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232206A (en) * | 1996-02-22 | 1997-09-05 | Hitachi Ltd | Coating apparatus |
| CN101015049A (en) * | 2004-09-16 | 2007-08-08 | S.E.S.株式会社 | Substrate treatment apparatus |
| CN104867849A (en) * | 2015-05-28 | 2015-08-26 | 北京七星华创电子股份有限公司 | Wafer back surface pollution prevention device |
-
2018
- 2018-07-13 CN CN201810768670.6A patent/CN109087870A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232206A (en) * | 1996-02-22 | 1997-09-05 | Hitachi Ltd | Coating apparatus |
| CN101015049A (en) * | 2004-09-16 | 2007-08-08 | S.E.S.株式会社 | Substrate treatment apparatus |
| CN104867849A (en) * | 2015-05-28 | 2015-08-26 | 北京七星华创电子股份有限公司 | Wafer back surface pollution prevention device |
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Application publication date: 20181225 |