CN109087841A - Reaction chamber and semiconductor processing equipment - Google Patents
Reaction chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN109087841A CN109087841A CN201710447343.6A CN201710447343A CN109087841A CN 109087841 A CN109087841 A CN 109087841A CN 201710447343 A CN201710447343 A CN 201710447343A CN 109087841 A CN109087841 A CN 109087841A
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- sub
- baffle
- reaction chamber
- cavity
- ring body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of reaction chamber and semiconductor processing equipment, it includes cavity, it is provided with the pedestal for carrying workpiece to be machined in this cavity, and is provided with process sleeve above pedestal, plasma diffuses to workpiece to be machined surface by process sleeve.Also, process sleeve includes multiple sub- baffles, and multiple sub- baffles successively arrange and form ring body, and the upper end of every sub- baffle is rotatably connect with cavity；By changing tilt angle of each sub- baffle relative to vertical direction, to adjust the lower ending opening size of ring body.Process efficiency not only can be improved in reaction chamber provided by the invention, reduces equipment cost, but also can be improved the flexibility of process results optimization.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular, to a kind of reaction chamber and semiconductor processing equipment.
Background technique
In recent years, the continuous expanded application and TSV with micro electro mechanical device system in consumer electronics field
Bright prospects of (Throughout Silicon Vias) the via etch technology in the following encapsulation field, dry plasma depth
Silicon etching process is increasingly becoming one of prevailing technology in micro electro mechanical processing field and TSV technology, has and generates high energy plasma
The plasma source of body, and chip is bombarded under the guidance of lower bias system, to be generated in wafer surface a series of
Physics and chemical action.
Fig. 1 is the cross-sectional view of existing reaction chamber, referring to Fig. 1, the reaction chamber 100 includes cavity, in the cavity
It is inside provided with pedestal 104, is used for bearing wafer 103.Also, roof opening is provided on the roof of the cavity 101, on the top
Plasma source is provided with above wall opening, which includes medium cylinder 105 and be looped around around the medium cylinder 105
Radio-frequency coil 106, by loading radio-frequency power to the radio-frequency coil 106, the process gas come in exciting media cylinder 105 formed
Plasma.Open Side Down diffuses into cavity 1 by above-mentioned roof for plasma, and reaches the surface of chip 103.In order to
Process gas and plasma are constrained, the top of chip 103 is limited in, is additionally provided with process sleeve in cavity 1
102, as shown in Fig. 2, the process sleeve 102 is in circular cone ring body, and lower ending opening is less than upper end opening, is played with plasma
The effect of convergence.
But the size of above-mentioned process sleeve be it is fixed, this makes the chip for different-diameter, needs to design difference
The process sleeve of size causes equipment cost higher, and in the chip of same reaction chamber processing different-diameter, it is also necessary to
Replacement procedure sleeve influences process efficiency so that the size of the process sleeve and the diameter of chip match.In addition, in technique
In debugging process, the fixed process sleeve of size does not have technique adjustment ability.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of reaction chamber and half are proposed
Process efficiency not only can be improved in conductor process equipment, reduces equipment cost, but also can be improved process results optimization
Flexibility.
A kind of reaction chamber, including cavity are provided to achieve the purpose of the present invention, is provided with is used in the cavity
The pedestal of workpiece to be machined is carried, and is provided with process sleeve above the pedestal, plasma passes through the process sleeve
Cylinder diffuses to the workpiece to be machined surface, and the process sleeve includes multiple sub- baffles, and multiple sub- baffles are successively arranged shape
It is rotatably connect at the upper end of ring body, and each sub- baffle with the cavity；
By changing tilt angle of each sub- baffle relative to vertical direction, opened to adjust the lower end of the ring body
Mouth size.
Preferably, multiple sub- baffles are divided into the first sub- baffle group and the second sub- baffle group, the sub- baffle number of the two
It is identical；
Sub- baffle in the first sub- baffle group is with the sub- baffle in the described second sub- baffle group along the week of the ring body
The side of any one sub- baffle to alternate setting, and in the first sub- baffle group and second son adjacent thereto
The lateral section of sub- baffle in baffle group is overlapped or is mutually butted.
Preferably, the ring body is circular cone ring body, and the lower ending opening of the ring body is less than the upper end opening of the ring body.
Preferably, the process sleeve further includes fixed ring, and the fixed ring is fixedly connected with the roof of the cavity, and
And in the fixed ring, and circumferentially distributed there are multiple rotary shafts, circumference of each rotary shaft along the fixed ring along its
Tangent line setting, and can rotate, each rotary shaft is fixedly connected with the upper end of each sub- baffle correspondingly.
Preferably, it is additionally provided with adjustment part in the cavity, through-hole, each son are provided on the adjustment part
Baffle is located in the through-hole, and is in contact under the effect of gravity with the inward flange of the through-hole；
It is each to change to drive all sub- baffles to rotate synchronously by rising or falling the adjustment part
Tilt angle of the sub- baffle relative to vertical direction.
Preferably, the reaction chamber further includes elevating mechanism, and the elevating mechanism is for driving the adjustment part to rise
Or decline.
Preferably, the elevating mechanism includes drive shaft, lifting driving source and fixed bracket, wherein
The lifting driving source is fixed on above the roof of the cavity by the fixed bracket；
The upper end of the drive shaft is connect with the lifting driving source, and the lower end of the drive shaft runs through described straight down
The roof of cavity extends in the cavity, and is fixedly connected with the adjustment part.
Preferably, the lifting driving source includes lifting cylinder or lifting motor.
Preferably, the elevating mechanism further includes bellows, and the bellows-sheathed is located at the outside of the drive shaft, to
Seal the gap between the drive shaft and the roof of the cavity.
Preferably, roof opening, the upper end opening of the ring body and the roof are provided on the roof of the cavity
It is open corresponding, and the top of roof opening is provided with plasma source, the plasma source is described for generating
Plasma.
Preferably, the plasma source includes medium cylinder and the radio-frequency coil that is looped around around the medium cylinder, is passed through
Radio-frequency power is loaded to the radio-frequency coil, to excite the process gas in the medium cylinder to form the plasma.
As another technical solution, the present invention also provides a kind of semiconductor processing equipment, including it is provided by the invention on
State reaction chamber.
The invention has the following advantages:
Reaction chamber provided by the invention, technique casing include multiple sub- baffles, and multiple sub- baffles successively arrange to be formed
Ring body, and the upper end of every sub- baffle is rotatably connect with cavity, and by changing each sub- baffle relative to vertical side
To tilt angle may be implemented to match with the workpiece to be machined of different-diameter to adjust the lower ending opening size of ring body, and
Process sleeve is no longer needed replacing, so as to improve process efficiency, and single technique casing can adapt to multiple diameter
Workpiece to be machined, so as to reduce equipment cost.In addition, it is opposite to change each sub- baffle by during process debugging
It can control the expansion of plasma and process gas in the tilt angle of vertical direction to adjust the lower ending opening size of ring body
Path is dissipated, so as to so that process sleeve has technique adjustment ability, and then improves the flexibility of optimization process results.
Semiconductor processing equipment provided by the invention not only may be used by using above-mentioned reaction chamber provided by the invention
To improve process efficiency, equipment cost is reduced, but also can be improved the flexibility of process results optimization.
Detailed description of the invention
Fig. 1 is the cross-sectional view of existing reaction chamber；
Fig. 2 is the structure chart of existing process sleeve；
Fig. 3 is the cross-sectional view of reaction chamber provided in an embodiment of the present invention；
Fig. 4 is the inside structure figure of process sleeve used in the embodiment of the present invention；
Fig. 5 is the side view of process sleeve used in the embodiment of the present invention；
Fig. 6 is the enlarged drawing of a-quadrant in Fig. 3.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The reaction chamber and semiconductor processing equipment of offer are described in detail.
Also referring to Fig. 3 and Fig. 4, reaction chamber 200 provided in this embodiment includes cavity 201 and plasma source,
Wherein, the pedestal 203 for carrying workpiece to be machined 204 is provided in cavity 201, and on the roof of the cavity 201 202
Be provided with roof opening, and the roof opening top be provided with plasma source, the plasma source for generate etc. from
Daughter, Open Side Down diffuses into cavity 201 by roof for plasma.Specifically, plasma source includes medium cylinder 207
And the radio-frequency coil 206 being looped around around the medium cylinder 207 is situated between by loading radio-frequency power to the radio-frequency coil 206 to excite
Process gas in matter cylinder 207 forms plasma.It can be loaded by adaptation to the radio-frequency coil 206 by radio-frequency power supply
Radio-frequency power.The radio-frequency coil 206 can be column solid bolt coil.Preferably, it is also surround around radio-frequency coil 206
It is provided with cooling support component 208, for cooling down to radio-frequency coil 206 and medium cylinder 207.
Moreover, being provided with the pedestal 203 for carrying workpiece to be machined 204 in the cavity 201, and in the pedestal 203
Top be provided with process sleeve 205, above-mentioned plasma diffuses to the table of workpiece to be machined 204 by the process sleeve 205
Face.Process sleeve 205 can play the role of convergence with plasma.In the present embodiment, process sleeve 205 includes multiple sons
Baffle, multiple sub- baffles, which are successively arranged, forms ring body.The ring body is circular cone ring body, and the lower ending opening of ring body is less than the upper of ring body
End opening plays the role of convergence with plasma.
Preferably, as shown in figure 4, multiple sub- baffles are divided into the first sub- baffle group and the second sub- baffle group, the son gear of the two
Plate quantity is identical, is three, and the sub- baffle 215 in the sub- baffle 214 and the second sub- baffle group in the first sub- baffle group
The side of any one sub- baffle 214 along the alternate setting of the circumferential direction of ring body, and in the first sub- baffle group and adjacent thereto
The lateral section of sub- baffle 215 in second sub- baffle group is overlapped, so that the ring body formed by multiple sub- baffles is in its circumferential direction
It is that continuously, so as to avoid plasma from letting out between two adjacent sub- baffles, and then can guarantee to converge
The effect of plasma.Certainly, the side of any one sub- baffle 214 in the first sub- baffle group and the second son adjacent thereto
The side of sub- baffle 215 in baffle group can also be mutually butted, this equally can be to avoid plasma leakage.
Also, the upper end of every sub- baffle is rotatably connect with cavity 201.Specifically, in the present embodiment, process sleeve
Cylinder 205 further includes fixed ring 212, which is fixedly connected with the roof 202 of cavity 201, also, in fixed ring 212
On, and along its it is circumferentially distributed have multiple rotary shafts 216, each rotary shaft 216 is arranged along the tangent to periphery of fixed ring 212, and energy
Enough rotations, each rotary shaft 216 are fixedly connected with the upper end of each sub- baffle correspondingly, to realize every sub- baffle
Upper end is rotatably connect with cavity 201.By the way that each rotary shaft 216 is arranged along the tangent to periphery of fixed ring 212, Ke Yibao
Each sub- baffle is demonstrate,proved in any one identical tilt angle, is capable of forming ring body.
It, can be by changing inclination of each sub- baffle relative to vertical direction by making the upper end rotation of every sub- baffle
Angle, to adjust the lower ending opening size of above-mentioned ring body, to no longer need replacing process sleeve 205, it will be able to straight with difference
The workpiece to be machined 204 of diameter matches, and then process efficiency can be improved.And single process sleeve 205 can adapt to it is a variety of
The workpiece to be machined 204 of diameter, so as to reduce equipment cost.In addition, changing each height by during process debugging
Tilt angle of the baffle relative to vertical direction can control plasma and technique to adjust the lower ending opening size of ring body
The diffusion path of gas so as to so that process sleeve has technique adjustment ability, and then improves the spirit of optimization process results
Activity.
As in Figure 3-5, it is additionally provided with adjustment part 213 in cavity 201, is provided with through-hole on the adjustment part 213, respectively
A sub- baffle is located in the through-hole, and is in contact under the effect of gravity with the inward flange of through-hole, so as to adjust 213 energy of part
It is enough that each sub- baffle is limited to a certain tilt angle.Also, it is all to drive by rising or falling adjustment part 213
Sub- baffle rotates synchronously, thus it is possible to vary tilt angle of each sub- baffle relative to vertical direction.As shown in figure 3, working as adjustment part
213 when dropping to position C from position B, and each sub- baffle turns at dotted line position towards outside under the effect of gravity, respectively
A baffle reduces relative to the tilt angle of vertical direction, so that the diameter of the lower ending opening of ring body increases.It follows that passing through
Decline adjustment part 213, the diameter of the lower ending opening of ring body can be increased；Conversely, can be subtracted by keeping adjustment part 213 above-mentioned
The diameter of the lower ending opening of small ring body.
In the present embodiment, reaction chamber further includes elevating mechanism, and the elevating mechanism is for driving above-mentioned adjustment part 213
It rises or declines, to realize the automatic control moved to adjustment part 213.Specifically, as shown in fig. 6, in the present embodiment, going up and down
Mechanism includes drive shaft 211, lifting driving source 209 and fixed bracket 210, wherein lifting driving source 209 passes through fixed bracket
210 are fixed on 202 top of roof of cavity 201.The lifting driving source 209 can be include lifting cylinder or lifting motor etc.
Deng.The upper end of drive shaft 211 connect with the lifting driving source 209, the lower end of drive shaft 211 through cavities 201 straight down
Roof 202 extends in cavity 201, and is fixedly connected with adjustment part 213.
In the present embodiment, adjustment part 213 includes horizontal extension, which extends horizontally to drive shaft 211
Lower section, also, the lower end of drive shaft 211 is provided with stud 218, which runs through horizontal extension straight down, and
It is matched by nut 219 with stud 218, be fixedly connected with horizontal extension with drive shaft 211.Certainly, in practical application
In, adjustment part 213 can also be fixedly connected with drive shaft 211 using any other mode.
Preferably, in order to guarantee that the inside of cavity 201 is in vacuum state, elevating mechanism further includes bellows 217, the wave
Line pipe 217 is set in the outside of drive shaft 211, to seal the gap between drive shaft 211 and the roof 202 of cavity 201.
As another technical solution, the embodiment of the present invention also provides a kind of semiconductor processing equipment comprising the present invention
The above-mentioned reaction chamber that embodiment provides.
Semiconductor processing equipment provided in an embodiment of the present invention, by using embodiment above-mentioned reaction provided by the invention
Process efficiency not only can be improved in chamber, reduces equipment cost, but also can be improved the flexibility of process results optimization.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (12)
1. a kind of reaction chamber, including cavity are provided with the pedestal for carrying workpiece to be machined in the cavity, and in institute
It states and is provided with process sleeve above pedestal, plasma diffuses to the workpiece to be machined surface by the process sleeve,
It is characterized in that, the process sleeve includes multiple sub- baffles, and multiple sub- baffles successively arrange and form ring body, and each institute
The upper end for stating sub- baffle is rotatably connect with the cavity；
It is big come the lower ending opening that adjusts the ring body by changing the tilt angle of each sub- baffle relative to vertical direction
It is small.
2. reaction chamber according to claim 1, which is characterized in that multiple sub- baffles be divided into the first sub- baffle group and
The sub- baffle number of second sub- baffle group, the two is identical；
Sub- baffle in the first sub- baffle group is with the sub- baffle in the described second sub- baffle group along the circumferential phase of the ring body
Between be arranged, and the side of any one sub- baffle in the first sub- baffle group and the described second sub- baffle adjacent thereto
The lateral section of sub- baffle in group is overlapped or is mutually butted.
3. reaction chamber according to claim 1, which is characterized in that the ring body is circular cone ring body, and the ring body
Lower ending opening is less than the upper end opening of the ring body.
4. reaction chamber according to claim 1, which is characterized in that the process sleeve further includes fixed ring, described solid
Determine ring to be fixedly connected with the roof of the cavity, also, in the fixed ring, and along its it is circumferentially distributed have multiple rotary shafts,
Each rotary shaft is arranged along the tangent to periphery of the fixed ring, and can rotate, and each rotary shaft is correspondingly
It is fixedly connected with the upper end of each sub- baffle.
5. reaction chamber according to any one of claims 1-4, which is characterized in that be additionally provided with tune in the cavity
One integral piece is provided with through-hole on the adjustment part, and each sub- baffle is located in the through-hole, and in the effect of self gravity
It is lower to be in contact with the inward flange of the through-hole；
It is each described to change to drive all sub- baffles to rotate synchronously by rising or falling the adjustment part
Tilt angle of the sub- baffle relative to vertical direction.
6. reaction chamber according to claim 5, which is characterized in that the reaction chamber further includes elevating mechanism, described
Elevating mechanism is for driving the adjustment part to rise or fall.
7. reaction chamber according to claim 6, which is characterized in that the elevating mechanism includes drive shaft, lifting driving
Source and fixed bracket, wherein
The lifting driving source is fixed on above the roof of the cavity by the fixed bracket；
The upper end of the drive shaft is connect with the lifting driving source, and the cavity is run through in the lower end of the drive shaft straight down
Roof, extend in the cavity, and be fixedly connected with the adjustment part.
8. reaction chamber according to claim 7, which is characterized in that the lifting driving source includes lifting cylinder or lifting
Motor.
9. reaction chamber according to claim 7, which is characterized in that the elevating mechanism further includes bellows, the wave
Line pipe sleeve is located at the outside of the drive shaft, to seal the gap between the drive shaft and the roof of the cavity.
10. reaction chamber according to any one of claims 1-4, which is characterized in that set on the roof of the cavity
It is equipped with roof opening, the upper end opening of the ring body is corresponding with roof opening, and sets in the top of roof opening
It is equipped with plasma source, the plasma source is for generating the plasma.
11. reaction chamber according to claim 10, which is characterized in that the plasma source includes medium cylinder and surround
Radio-frequency coil around the medium cylinder, by loading radio-frequency power to the radio-frequency coil, to excite in the medium cylinder
Process gas form the plasma.
12. a kind of semiconductor processing equipment, which is characterized in that including reaction chamber described in claim 1-11 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710447343.6A CN109087841B (en) | 2017-06-14 | 2017-06-14 | Reaction chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710447343.6A CN109087841B (en) | 2017-06-14 | 2017-06-14 | Reaction chamber and semiconductor processing equipment |
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| Publication Number | Publication Date |
|---|---|
| CN109087841A true CN109087841A (en) | 2018-12-25 |
| CN109087841B CN109087841B (en) | 2020-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710447343.6A Active CN109087841B (en) | 2017-06-14 | 2017-06-14 | Reaction chamber and semiconductor processing equipment |
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| Country | Link |
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| CN (1) | CN109087841B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110223903A (en) * | 2019-04-22 | 2019-09-10 | 江苏鲁汶仪器有限公司 | A kind of symmetrically ion source baffle of arrangement and synchronous on-off |
| CN111081521A (en) * | 2019-11-27 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Medium cartridge |
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| CN110223903A (en) * | 2019-04-22 | 2019-09-10 | 江苏鲁汶仪器有限公司 | A kind of symmetrically ion source baffle of arrangement and synchronous on-off |
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| CN109087841B (en) | 2020-02-11 |
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