CN109081302A - A kind of microchannel processing method, microchannel - Google Patents
A kind of microchannel processing method, microchannel Download PDFInfo
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- CN109081302A CN109081302A CN201810771392.XA CN201810771392A CN109081302A CN 109081302 A CN109081302 A CN 109081302A CN 201810771392 A CN201810771392 A CN 201810771392A CN 109081302 A CN109081302 A CN 109081302A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00119—Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of microchannel processing method and microchannels, and micro- channel, the two sides of micro- channel Through-substrate are formed on the substrate；The closure of openings of micro- channel is lived in the upper end of the deposited sacrificial layer in micro- channel, the sacrificial layer, and the inside of sacrificial layer forms gap；Coating is deposited on substrate, and the coating is covered on the top of substrate and micro- channel, sacrificial layer；Sacrifice layer corrosion is fallen by gap.The processing method of microchannel of the present invention, coating can be made to be combined together well with the position on substrate in addition to micro- channel, the leakage problem that traditional bonding tape comes, and the tradition fitting micro- channel obstructing problem of bring are avoided, ensure that the miniaturization of micro- channel.
Description
Technical field
The present invention relates to manufacture fields, more particularly, to a kind of processing method of microchannel, and pass through the above method
Microchannel obtained.
Background technique
Microchannel exactly forms one or more fine channel as its name suggests, inside it for liquid or gas
Circulation, the size of microchannel is usually in the micron-scale in nano-scale range.It can control the stream of liquid or gas by microchannel
Enter or flow out, can be applied to the delicate fields such as medical injection, spray head, environmental Kuznets Curves.
The mode of traditional machining or laser processing has been far from satisfying the production of microchannel；And have micro-
Channel is not linear type, and with curved radian, difficulty of processing is big.Existing micro-machined method is usually the shape in substrate
At microchannel, a cover board is set in substrate by way of being bonded or pasting later.The microchannel that this mode is formed, lid
Between plate and substrate or it is cooperation imprecision, will cause the knot that gas or liquid are leaked to cover board and substrate from microchannel
In conjunction face；It is when fitting, glue can be flowed into microchannel, cause the problem of blocking.
In view of above-mentioned various reasons, existing micro-machined mode seriously constrains the miniaturization of microchannel.
Summary of the invention
It is an object of the present invention to provide a kind of new solutions of microchannel processing method.
According to the first aspect of the invention, a kind of microchannel processing method is provided, comprising the following steps:
Step S10: micro- channel, the two sides of micro- channel Through-substrate are formed on the substrate；
Step S20: the closure of openings of micro- channel is lived in the upper end of the deposited sacrificial layer in micro- channel, the sacrificial layer, sacrificial
The inside of domestic animal layer forms gap；
Step S30: depositing coating on substrate, the coating be covered on substrate and micro- channel, sacrificial layer it is upper
Side；
Step S40: sacrifice layer corrosion is fallen by gap.
Optionally, the substrate is silicon substrate.
Optionally, in step slo, the substrate forms micro- channel by photoetching or etching.
Optionally, in step S20, deposited sacrificial layer on a surface of the substrate；In the position of micro- channel, the sacrifice
The closure of openings of micro- channel is lived in the upper end of layer, and forms gap in the inside of sacrificial layer；Later by corresponding position on substrate
Sacrificial layer is got rid of.
Optionally, in micro- channel sacrificial layer upper surface be lower than micro- channel upper surface；The cap layer deposition
Into the micro- channel in part.
Optionally, in micro- channel sacrificial layer upper surface be higher than micro- channel upper surface, or with micro- channel
Upper surface flushes.
Optionally, the sacrificial layer uses silica.
Optionally, the coating uses polysilicon.
Optionally, in step S40, using wet process or gas etch, through gap by the sacrificial layer below coating
Removal.
According to another aspect of the present invention, it additionally provides a kind of using microchannel made from above-mentioned processing method.
The processing method of microchannel of the present invention can be such that coating ties well with the position on substrate in addition to micro- channel
It is combined, avoids the leakage problem that traditional bonding tape comes, and the tradition fitting micro- channel obstructing problem of bring, ensure that
The miniaturization of micro- channel.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become apparent.
Detailed description of the invention
It is combined in the description and the attached drawing for constituting part of specification shows the embodiment of the present invention, and even
With its explanation together principle for explaining the present invention.
Fig. 1 is the process flow chart of microchannel processing method of the present invention.
Fig. 2 to Fig. 6 is the process of the processing microchannel of one of embodiment according to the present invention.
Fig. 7 is the top view (Top View Plot) of microchannel of the present invention.
Specific embodiment
Carry out the various exemplary embodiments of detailed description of the present invention now with reference to attached drawing.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The range of invention.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the present invention
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, then in subsequent attached drawing does not need that it is further discussed.
The embodiment of the present invention and example described with reference to the accompanying drawings.
Fig. 1 shows the flow chart of an illustrative examples of microchannel processing method according to the present invention.
As shown in Figure 1, micro- channel, the two sides of micro- channel Through-substrate are formed on the substrate in step S10.
Substrate of the invention can use monocrystalline silicon, SiC or other substrates well-known to those skilled in the art.It can lead to
It crosses semiconductor technology and forms micro- channel, such as photoetching well-known to those skilled in the art, etching technique on the surface of substrate.
The size of micro- channel can be in micron order to nano-scale range, this is for micro fabrication can be easily
It realizes.Micro- channel can be linear type, be also possible to fold-line-shaped, curved shape or other shapes, and both ends are penetrated through to substrate
Two sides so that the both ends of micro- channel are exposed.Such as the two sides that perforation is opposite to substrate, it is also possible to other arbitrary two sides.
Herein it should be noted that " penetrating through to the two sides of substrate " herein is also including the side of the same side wall of Through-substrate
Case.
In step S20, the deposited sacrificial layer in micro- channel, the upper end of the sacrificial layer is by the closure of openings of micro- channel
Firmly, and in the inside of sacrificial layer gap is formed；
Sacrificial layer can use silica material well-known to those skilled in the art.Sacrificial layer is deposited into micro- channel
In, and live sacrificial layer by the closure of openings of micro- channel.Since the size of micro- channel is smaller, sacrificial layer has little time entire micro- ditch
Road fills up, and will close the open end of micro- channel, so that gap can be formed in sacrificial layer.The gap is along micro- channel
It moves towards to extend, and the two sides of Through-substrate.
Furthermore it is also possible to guarantee the formation in gap by the depth for controlling micro- channel.Such as selection larger depth is micro-
Channel, during formation, its closure of openings will be lived sacrificial layer by having little time to fill up micro- channel, thus in sacrificial layer
Form gap.
In one example, the deposited sacrificial layer on the surface of entire substrate, in the position of micro- channel, the sacrificial layer
The closure of openings of micro- channel is lived in upper end, and forms gap in the inside of sacrificial layer.It is subsequent to pass through photoetching or this field
Other way known to technical staff gets rid of the sacrificial layer of corresponding position on substrate, only retains the sacrifice of micro- channel location
Layer.
In step s 30, coating is deposited on substrate, and the coating is covered on substrate and micro- channel, sacrificial layer
Top.
Coating use polysilicon or material well-known to those skilled in the art, by by cap layer deposition in substrate
On, which is combined together well with substrate, and micro- channel, sacrificial layer are covered.
In step s 40, sacrifice layer corrosion is fallen by gap.
Micro- channel and the sacrificial layer in micro- channel are coated cap rock and are surrounded, therefore gap that can be exposed by side wall
Sacrifice layer corrosion in micro- channel is fallen, so that micro- channel is exposed.
Such as can use wet process or gas etch, the sacrificial layer below coating is removed through gap.
The processing method of the micro- channel of the present invention, can be such that coating ties well with the position on substrate in addition to micro- channel
It is combined, avoids the leakage problem that traditional bonding tape comes, and the tradition fitting micro- channel obstructing problem of bring, ensure that
The miniaturization of micro- channel.
According to one embodiment of present invention, in step S20, the upper surface of sacrificial layer is higher than micro- ditch in micro- channel
The upper surface in road.At this point, the coating being deposited on substrate 1 will form a convex structure in the position of micro- channel.When
After subsequent sacrificial layer is etched, the groove that coating bottom end is formed can participate in surrounding micro- channel jointly.
According to one embodiment of present invention, in step S20, the upper surface of sacrificial layer and micro- channel in micro- channel
Upper surface flush, at this point, the coating being deposited on substrate 1 is flat all over.After subsequent sacrificial layer is etched, cover
The smooth bottom end of cap rock covers micro- channel.
According to one embodiment of present invention, in step S20, the upper surface of sacrificial layer is lower than micro- ditch in micro- channel
The upper surface in road.This part of covering layer for allowing for when depositing coating, positioned at micro- channel location can extend to Wei Gou
In road, recessed structure is formed.After subsequent sacrificial layer is etched, part of covering layer can occupy the volume of micro- channel, thus
It can reduce the volume of micro- channel, it is smaller so as to do micro- channel.
One specific example of microchannel processing method according to the present invention is described referring to Fig. 2 to Fig. 6.
As shown in Fig. 2, forming micro- channel 2 on 1 surface of substrate of such as wafer.In semiconducter process, such as
Micro- channel pattern and deep etching can be formed in lining by light shield well-known to those skilled in the art and the technology of etching
The surface at bottom 1.
Depending on the quantity and shape of micro- channel 2 are as needed, Fig. 2 shows the embodiments of three micro- channels 2.This three micro-
The two sides of the equal Through-substrate 1 of channel 2.
With reference to Fig. 3, the deposited sacrificial layer 3 on the surface of substrate 1.In the position of micro- channel 2, the upper end of sacrificial layer 3 will be micro-
The closure of openings of channel 2 is lived, and forms gap 4 in the inside of sacrificial layer 3.
The material of sacrificial layer 3 can select silica, can pass through deposition or side well-known to those skilled in the art
Surface deposited sacrificial layer of the formula in substrate 1.It can make sacrificial layer by controlling the depth of micro- channel 2 and the thickness of sacrificial layer 3
3 live the closure of openings of micro- channel 2, form closed section 5.Gap 4 is formd in the inside of sacrificial layer 3, the gap 4 is along micro- ditch
Road 2 moves towards to extend, and exposes from the corresponding two sides of substrate 1.
Herein, it should be noted that the upper surface of sacrificial layer 3 can be flushed with the upper surface of micro- channel 2 in micro- channel 2,
The upper surface of micro- channel 2 can also be higher or lower than, no longer illustrated herein.
With reference to Fig. 3, by photoetching or other way well-known to those skilled in the art by corresponding position on substrate 1
Sacrificial layer 3 is got rid of, and the sacrificial layer 3 of micro- 2 position of channel is only retained.After the sacrificial layer 3 of 1 corresponding position of substrate is etched away, make
The surface exposure for obtaining 1 corresponding position of substrate comes out, convenient for the combination of subsequent coating.
With reference to Fig. 4, coating 6 is deposited on the surface of substrate 1, which can select polysilicon or art technology
Other materials known to personnel.Coating 6 is deposited on the sacrificial layer 3 of 2 position of surface and micro- channel of substrate 1, thus
So that coating 6 is combined together with substrate 1, and micro- channel 2 and the sacrificial layer 3 in micro- channel 2 are covered.
With reference to Fig. 5, the sacrificial layer 3 in micro- channel 2 is removed by gap 4, so that micro- channel 2 be emptied.The two of gap 4
End is exposed to be allowed to using wet process or gas etch outside, removes the sacrificial layer of 6 lower section of coating through gap,
To obtain micro- channel of the invention, with reference to Fig. 6.
The microchannel that processing method obtains according to the present invention, is tightly combined between substrate and coating, is not in leakage
Or the problem of blocking micro- channel, it ensure that the miniaturization of micro- channel.
The invention also includes a kind of devices.The device includes at least one above-mentioned microchannel.For example, the device can be
Syringe or spray head etc..Fig. 7 shows the top view (Top View Plot) of microchannel of the present invention.With reference to Fig. 7, micro- channel 2
Ontology extends in substrate 1 according to set shape, and two ends 20,21 of micro- channel 2 are exposed from substrate 1.Although
Through some specific embodiments of the invention are described in detail by example, but those skilled in the art should manage
Solution, example above is merely to be illustrated, the range being not intended to be limiting of the invention.Those skilled in the art should manage
Solution, can without departing from the scope and spirit of the present invention modify to above embodiments.The scope of the present invention is by institute
Attached claim limits.
Claims (10)
1. a kind of microchannel processing method, which comprises the following steps:
Step S10: micro- channel, the two sides of micro- channel Through-substrate are formed on the substrate；
Step S20: the closure of openings of micro- channel is lived in the upper end of the deposited sacrificial layer in micro- channel, the sacrificial layer, sacrificial layer
Inside formed gap；
Step S30: depositing coating on substrate, and the coating is covered on the top of substrate and micro- channel, sacrificial layer；
Step S40: sacrifice layer corrosion is fallen by gap.
2. microchannel processing method according to claim 1, which is characterized in that the substrate is silicon substrate.
3. microchannel processing method according to claim 1, which is characterized in that in step slo, the substrate passes through light
It carves or etching forms micro- channel.
4. microchannel processing method according to claim 1, which is characterized in that in step S20, on a surface of the substrate
Deposited sacrificial layer；In the position of micro- channel, the closure of openings of micro- channel is lived in the upper end of the sacrificial layer, and in sacrificial layer
Portion forms gap；The sacrificial layer of corresponding position on substrate is got rid of later.
5. microchannel processing method according to claim 1 or 4, which is characterized in that sacrificial layer is upper in micro- channel
End face is lower than the upper surface of micro- channel；The cap layer deposition is into the micro- channel in part.
6. microchannel processing method according to claim 1 or 4, which is characterized in that sacrificial layer is upper in micro- channel
End face is higher than the upper surface of micro- channel, or flushes with the upper surface of micro- channel.
7. microchannel processing method according to claim 1, which is characterized in that the sacrificial layer uses silica.
8. microchannel processing method according to claim 1, which is characterized in that the coating uses polysilicon.
9. microchannel processing method according to claim 1, which is characterized in that in step S40, utilize wet process or gas
Etching removes the sacrificial layer below coating through gap.
10. a kind of use microchannel made from processing method according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810771392.XA CN109081302B (en) | 2018-07-13 | 2018-07-13 | Microchannel processing method and microchannel |
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|---|---|---|---|
| CN201810771392.XA CN109081302B (en) | 2018-07-13 | 2018-07-13 | Microchannel processing method and microchannel |
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| CN109081302A true CN109081302A (en) | 2018-12-25 |
| CN109081302B CN109081302B (en) | 2020-10-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023109614A1 (en) * | 2021-12-15 | 2023-06-22 | 无锡华润上华科技有限公司 | Mems structure and manufacturing method therefor |
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| CN109081302B (en) | 2020-10-16 |
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