CN102565460A - Continuous direct-writing nano particle solution scanning probe and manufacturing method thereof - Google Patents
Continuous direct-writing nano particle solution scanning probe and manufacturing method thereof Download PDFInfo
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- CN102565460A CN102565460A CN2010105919334A CN201010591933A CN102565460A CN 102565460 A CN102565460 A CN 102565460A CN 2010105919334 A CN2010105919334 A CN 2010105919334A CN 201010591933 A CN201010591933 A CN 201010591933A CN 102565460 A CN102565460 A CN 102565460A
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Abstract
The invention provides a continuous direct-writing nano particle solution scanning probe which comprises a silicon substrate and a ring-shaped housing, wherein the silicon substrate is provided with a probe point and a cantilever beam; the part of the ring-shaped housing, which is positioned between the periphery of the probe point and the the probe point, is provided with a ring-shaped point micro-channel, so that a volcanic vent structure is formed by the ring-shaped housing and the probe point; the top end of the probe point extends out of the ring-shaped housing; the end of the cantilever beam, which is far away from the probe point, is provided with a solution storage tank; both ends of a conveying micro-channel positioned in the cantilever beam are respectively communicated with the point micro-channel and the solution storage tank; and the top end of the probe point has diameter of 18 to 22nm. According to the invention, not only does the continuous direct-writing nano particle solution scanning probe have writing resolution of an AFM (Atomic Force Microscope) probe, but also the transmission of molecular solution can be implemented and the technical bottleneck of SPL (Sound Pressure Level) can be solved. Moreover, the invention also aims to provide a manufacturing method of the scanning probe.
Description
Technical field
The invention belongs to micro-nano scientific domain, relevant with the scan-probe and the manufacturing approach thereof of continuous direct write nano particle solution especially.
Background technology
Scan-probe etching process technology (SPL) is to utilize scanning probe microscopy to carry out nanometer etching processing and a kind of technology of developing into.This technology is " arm " of microscope as the location, with being installed in scan-probe on the microscope as " pen ", getting the molecule with chemical affinity and in substrate, " writes " formation stabilized nano structure through dipping in.This technology has high resolving power, accurate positioning, directly advantage such as writes, and in the nanoscale research in fields such as physics, chemistry, biology, has obtained using widely.Wherein, the design and fabrication technology of scan-probe (pen) is the key of SPL.
Initial SPL techniques make use atomic force microscope (AFM) probe (Chad Mirkin, 2000), because AFM probe tip diameter can reach 10 nanometers, so the minimum feature of etching can reach about 10 nanometers.The advantage of SPL technology is that resolution is high, but bottleneck is need constantly dip in to get to write molecular solution, and is can't the etching area very big or than complicated graphs.2008, people such as Andre Meister invented a kind of scan-probe (US Patent 20080302960A1) of built-in microchannel, beat micro-hole at the scanning probe tip place, and are communicated to the hopper on the chip by built-in microchannel.Through the molecular solution in the hopper is transported to the needle point mouth continually, realize directly writing continuously, solved and need constantly dip in the problem of writing liquid of getting.But should technology also there be fatal defective: changed the transporting mechanism of molecular solution fully, can't reach the required resolution of SPL, also just lost the meaning of nanometer etching.The SPL technology be gas-liquid through forming nanometer thickness between afm tip and the substrate to the interface, utilize molecular motion from the principle of concentration height to the migration of concentration lower, make molecular migration on the needle point to substrate, form the molecule self assembly.And after the punching, molecular solution directly contacts substrate, forms big drop, and resolution reduces greatly.
Summary of the invention
The objective of the invention is to realize the transmission of molecular solution again, can solve the scan-probe of the continuous direct write nano particle solution of SPL technical bottleneck for a kind of resolution of writing that had both had the AFM probe is provided.Another object of the present invention is for the manufacturing approach of this scan-probe is provided.
The objective of the invention is to realize like this:
The scan-probe of the continuous direct write nano particle solution of the present invention; Include the silicon base of probe tip and semi-girder; Thereby between probe tip periphery and probe tip, have annular needle point microchannel and probe tip to form the annular outer cover of crater formula structure, stretch out outside the annular outer cover on the probe tip top, on the end of semi-girder away from probe tip hopper is arranged; The two ends that are positioned at the conveying microchannel of semi-girder are communicated with annular needle point microchannel, hopper respectively; The probe tip top end diameter is 16～22nm, and the probe tip top end diameter is 16～22nm rice, has guaranteed the resolution of nanometer etching; Hopper makes molecular solution be transported to the probe tip crater through capillary force, realizes the continuous supply of molecular solution.
Annular outer cover 0.8～1.2mm is stretched out on above-mentioned probe tip top, annular outer cover wall thickness 480～520nm, and gap, annular needle point microchannel is 480～520nm, carrying the diameter of microchannel is 0.8～1.2mm.
Above-mentioned probe tip top end diameter is 20nm and stretches out annular outer cover 1 μ m, annular outer cover wall thickness 500nm, and gap, annular needle point microchannel is 500nm, carrying the diameter of microchannel is 1mm.
Above-mentioned hopper is shaped as trapezoidal.
The inventive method comprises the steps:
1) on silicon base, utilize KOH solution to etch the scanning probe tip prototype, reoxidize needle point, the etching oxidation layer makes the needle point sharpening, makes the needle point diameter reach 16-22nm;
2) on silicon base, deposit respectively successively:
(1) 0.25-0.30mm silicon nitride film, and opening of etching is in order to making it be communicated with back side hopper;
(2) 0.4-0.5mm silicon dioxide sacrificial layer;
(3) 0.25-0.5mm silicon nitride films;
3) etch microchannel openings in the scan-probe left part, utilize CF then
4Solution etching oxidation sacrificial silicon layer forms the microchannel;
4) silicon nitride film of deposition one deck 0.25～0.35 μ m at the microchannel openings two ends seals microchannel openings;
5) the unnecessary silicon nitride film in etched micro access portal place in KOH solution, utilizes the anisotropic etching technology to go out hopper at the silicon base back-etching.
During work, molecular solution promptly stops at the annular outer cover edge near can being transported to needle point through annular needle point microchannel between probe tip and annular outer cover from hopper on the silicon base through capillary force, has guaranteed that like this solution can not flow directly on the silicon base.Molecule is to move to silicon base through migration from probe tip, forms the self assembly layer, has guaranteed the resolution of etching like this.Adopt a plurality of probes of the present invention just can form nanometer etching scan-probe array chip.
Nanometer etching scan-probe of the present invention has the following advantages.
(1) through the built-in microchannel of semi-girder crater formula needle point and silicon base hopper are communicated with, have realized continuous supply solution, on silicon base, directly write continuously;
(2) write the resolution height, its nanometer line thickness of writing is about 30nm;
(3) but adopt a plurality of scan-probe shape scan-probe array chips of the present invention; Scanning is visited the row chip and can be transported to simultaneously on each probe writing solution; Realized directly writing continuously on a large scale, can be used for the manufacturing of extensive nanometer etching, nano-device.
Description of drawings:
Fig. 1 is a scan-probe structural representation of the present invention.
Fig. 2 is a scan-probe process chart of the present invention.
Embodiment:
Referring to Fig. 1; The scan-probe of the continuous direct write nano particle solution of the present invention; Include the silicon base 3 of probe tip 1 and semi-girder 2, thus the probe tip periphery be fixed on the silicon base and and probe tip between have annular needle point microchannel 4 and probe tip to form the annular outer cover 5 of crater formula structure.Stretch out outside the annular outer cover on the probe tip top.On the end of semi-girder away from probe tip trapezoidal hopper 6 is arranged.The two ends that are positioned at the conveying microchannel 7 of semi-girder are communicated with annular needle point microchannel, hopper respectively.
The probe tip top end diameter is 20nm and stretches out annular outer cover 1mm.Annular outer cover wall thickness 500nm.Gap, annular needle point microchannel is 500nm.Carrying the diameter of microchannel is 1mm.
Each machined parameters of scan-probe can be referring to table 1.
Fig. 2 is a scan-probe process chart of the present invention.Referring to Fig. 2, this method of the present invention comprises the steps:
1) on silicon base 3, utilize KOH solution to etch scanning probe tip 1 prototype, reoxidize needle point, the etching oxidation layer makes the needle point sharpening, makes the needle point diameter reach 20nm;
2) on silicon base, deposit respectively successively:
(1) 0.25-0.30mm silicon nitride film 8, and opening of etching 9 is in order to making it be communicated with back side hopper;
(2) 0.4-0.5mm silicon dioxide sacrificial layer 10;
(3) 0.25-0.3mm silicon nitride films 11;
3) etch microchannel openings 4-1 in needle point prototype left part, utilize CF then
4Solution etching oxidation sacrificial silicon layer forms microchannel 4;
4) silicon nitride film 4-2,4-3 of deposition one deck 0.25～0.30 μ m at the microchannel openings two ends seals microchannel openings;
5) the unnecessary silicon nitride film in etched micro access portal place in KOH solution, utilizes the anisotropic etching technology to go out trapezoidal hopper 6 at the silicon base back-etching.
Table 1: scan-probe machined parameters
| The needle point height | 7—8μm |
| The semi-girder material | Si 3N 4（LPCVD） |
| Semi-girder length | 500 μm， |
| The semi-girder width | 22? μm |
| Semi-girder rigidity (theoretical value) | 0.05—0.5 N/m |
| Chip size (removing semi-girder) | 2158 μm × 3282? μm |
| The hopper size | 1240? μm × 1354? μm |
| The cross section, microchannel | (0.3—1)? μm × (5—7) μm |
| The chip body material | Silicon (100), thick 350 μ m, conductance 50 Ω cm P types |
The present invention can be used for the manufacturing of large scale integrated circuit manufacturing, nano-electromechanical system and the nano-sensor of the following live width of 30 nanometers, the manufacturing of nano biological chip.
The foregoing description is that foregoing of the present invention is further described, but should this scope that is interpreted as the above-mentioned theme of the present invention only not limited to the foregoing description.All technology that realizes based on foregoing all belong to scope of the present invention.
Claims (5)
1. the continuous scan-probe of direct write nano particle solution; Include the silicon base of probe tip and semi-girder; Thereby between probe tip periphery and probe tip, there are annular needle point microchannel and probe tip to form the annular outer cover of crater formula structure; Stretch out outside the annular outer cover on the probe tip top; On the end of semi-girder away from probe tip hopper is arranged, the two ends that are positioned at the conveying microchannel of semi-girder are communicated with annular needle point microchannel, hopper respectively, and the probe tip top end diameter is 16～22nm.
2. the scan-probe of continuous direct write nano particle solution as claimed in claim 1; It is characterized in that the probe tip top stretches out annular outer cover 0.8～1.2 μ m; Annular outer cover wall thickness 480～520nm; Gap, annular needle point microchannel is 480～520nm, and carrying the diameter of microchannel is 0.8～1.2mm.
3. the scan-probe of continuous direct write nano particle solution as claimed in claim 2; It is characterized in that the probe tip top end diameter is 20nm and stretches out annular outer cover 1 μ m; Annular outer cover wall thickness 500nm, gap, annular needle point microchannel is 500nm, carrying the diameter of microchannel is 1mm.
4. like the scan-probe of the described continuous direct write nano particle solution of one of claim 1～3, it is trapezoidal to it is characterized in that hopper is shaped as.
5. the manufacturing approach of the scan-probe of the described continuous direct write nano particle solution of claim 1 is characterized in that this method comprises the steps:
1) on silicon base, utilize KOH solution to etch the scanning probe tip prototype, reoxidize needle point, the etching oxidation layer makes the needle point sharpening, makes the needle point diameter reach 16-22nm;
2) on silicon base, deposit respectively successively:
(1) 0.25-0.30mm silicon nitride film, and opening of etching makes it be communicated with back side hopper;
(2) 0.4-0.5mm silicon dioxide sacrificial layer;
(3) 0.25-0.5mm silicon nitride films;
3) etch microchannel openings in the scan-probe left part, utilize CF then
4Solution etching oxidation sacrificial silicon layer forms the microchannel;
4) silicon nitride film of deposition one deck 0.25～0.35 μ m at the microchannel openings two ends seals microchannel openings;
5) the unnecessary silicon nitride film in etched micro access portal place in KOH solution, utilizes the anisotropic etching technology to go out hopper at the silicon base back-etching.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106701829A (en) * | 2017-02-20 | 2017-05-24 | 电子科技大学 | Method for penetrating nano-probe into cell nucleus |
| CN107879309A (en) * | 2017-11-13 | 2018-04-06 | 上海交通大学 | The hollow cantilever probe delivered and extracted for micro/nano-scale material |
| CN109081302A (en) * | 2018-07-13 | 2018-12-25 | 歌尔股份有限公司 | A kind of microchannel processing method, microchannel |
| CN109879238A (en) * | 2019-01-15 | 2019-06-14 | 江苏大学 | Micro-cantilever device, processing method and a kind of detection method of embedded channel-type |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040004182A1 (en) * | 2000-06-09 | 2004-01-08 | Christine Kranz | Sample for simultaneously conducting electro-chemical and topographic near-field microscopy |
| CN1730378A (en) * | 2005-08-04 | 2006-02-08 | 上海交通大学 | Integration manufacturing method of cantilever beam type dot needle-point based on silicon oxide film |
| CN1843896A (en) * | 2006-04-21 | 2006-10-11 | 清华大学 | Pinpoint direct writing method based on gas transporting fluid material and device thereof |
| US20080302960A1 (en) * | 2007-05-11 | 2008-12-11 | Andre Meister | Probe arrangement |
| JP2009058534A (en) * | 1999-12-20 | 2009-03-19 | Seiko Instruments Inc | Near-field optical probe and method of manufacturing the same, and near-field optical device using the near-field optical probe |
-
2010
- 2010-12-17 CN CN 201010591933 patent/CN102565460B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009058534A (en) * | 1999-12-20 | 2009-03-19 | Seiko Instruments Inc | Near-field optical probe and method of manufacturing the same, and near-field optical device using the near-field optical probe |
| US20040004182A1 (en) * | 2000-06-09 | 2004-01-08 | Christine Kranz | Sample for simultaneously conducting electro-chemical and topographic near-field microscopy |
| CN1730378A (en) * | 2005-08-04 | 2006-02-08 | 上海交通大学 | Integration manufacturing method of cantilever beam type dot needle-point based on silicon oxide film |
| CN1843896A (en) * | 2006-04-21 | 2006-10-11 | 清华大学 | Pinpoint direct writing method based on gas transporting fluid material and device thereof |
| US20080302960A1 (en) * | 2007-05-11 | 2008-12-11 | Andre Meister | Probe arrangement |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106701829A (en) * | 2017-02-20 | 2017-05-24 | 电子科技大学 | Method for penetrating nano-probe into cell nucleus |
| CN106701829B (en) * | 2017-02-20 | 2020-05-12 | 电子科技大学 | Method for penetrating into cell nucleus by using nanoprobe |
| CN107879309A (en) * | 2017-11-13 | 2018-04-06 | 上海交通大学 | The hollow cantilever probe delivered and extracted for micro/nano-scale material |
| CN107879309B (en) * | 2017-11-13 | 2020-05-05 | 上海交通大学 | Hollow cantilever probe for delivering and extracting micro-nano scale substances |
| CN109081302A (en) * | 2018-07-13 | 2018-12-25 | 歌尔股份有限公司 | A kind of microchannel processing method, microchannel |
| CN109879238A (en) * | 2019-01-15 | 2019-06-14 | 江苏大学 | Micro-cantilever device, processing method and a kind of detection method of embedded channel-type |
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| CN102565460B (en) | 2013-07-17 |
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