JP6372227B2 - Channel device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a flow path device having a micro flow path on a substrate. In particular, the present invention relates to a flow channel device in which electrodes are arranged facing a flow channel.

  In recent years, micro-TAS (Micro Total Analysis System), Lab-on-a-chip, MEMS (Micro), which applied element formation technology (semiconductor process) to semiconductor substrates to form flow paths (paths through which liquids and gases flow) A flow channel device called Electro Mechanical System) has been studied and put into practical use. These flow path devices have a flow path having a width of the order of micrometers inside a substrate (chip) having a size of several centimeters square, and have a structure for joining or branching such flow paths. Have.

  For example, a microchannel device for performing a chemical reaction is also called a microreactor, and is a device that has advantages unique to microchannels, such as a high heating / cooling rate and a rapid reaction due to a short diffusion length of a substance. Expected to be used in various fields. For example, an application example to a pressure gauge and a differential pressure flow meter using an electrode arranged in the vicinity of a flow path and using a signal obtained by using the electrode has been reported (Patent Document 1).

JP 2010-2221073 A

  Since the flow channel device is configured to allow fluid such as liquid and gas to pass through the inside of a structure manufactured by applying a semiconductor process, if the fluid leaks from the flow channel, the reliability of the entire device may be impaired. There is.

  Accordingly, an object of the present invention is to provide a highly reliable flow path device by preventing fluid leakage from the flow path.

  A flow path device according to an embodiment of the present invention includes a first substrate, a second substrate facing the first substrate, a flow path formed between the first substrate and the second substrate, An electrode having a surface facing the flow path is provided inside the first substrate, and the surface of the electrode facing the flow path has a region exposed to the flow path, The periphery of the surface facing the flow path is covered with a covering portion made of a material different from that of the electrode.

  In the present specification, a portion covering the periphery of the surface facing the flow path (the boundary between the electrode and the first substrate that defines the surface facing the flow path) is referred to as a “covering portion”. The covering portion can be provided by using a part of the first substrate on which the electrodes are provided, or an insulating layer different from the first substrate can be provided. In any case, the covering portion is made of a material (for example, a semiconductor material or an insulating material) made of a substance different from the electrode.

A flow path device manufacturing method according to an embodiment of the present invention includes a first substrate, a second substrate facing the first substrate, and a flow formed between the first substrate and the second substrate. A flow path device comprising: a step of forming an electrode forming groove on the back surface of the first substrate;
Filling the electrode forming groove with a conductive material to form an electrode; etching the surface of the first substrate to expose a portion of the electrode facing the flow path; and And disposing the second substrate so as to face the surface of the first substrate.

  A flow path device manufacturing method according to an embodiment of the present invention includes a first substrate, a second substrate facing the first substrate, and a flow formed between the first substrate and the second substrate. And a step of forming an electrode forming groove on the surface of the first substrate and a step of filling the electrode forming groove with a conductive material to form an electrode. And a step of forming an insulating layer covering at least the periphery of the electrode on the surface of the first substrate, and a step of disposing the second substrate so as to face the surface of the first substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the leak of the fluid from a flow path can be prevented and a highly reliable flow path device can be implement | achieved.

It is a figure which shows the flow-path device which concerns on 1st Embodiment of this invention. It is a figure which shows the manufacturing process of the flow-path device which concerns on 1st Embodiment of this invention. It is a figure which shows the manufacturing process of the flow-path device which concerns on 1st Embodiment of this invention. It is a figure which shows the flow-path device which concerns on 2nd Embodiment of this invention. It is a figure which shows the manufacturing process of the flow-path device concerning 2nd Embodiment of this invention. It is a figure which shows the flow-path device which concerns on 3rd Embodiment of this invention. It is a figure which shows the manufacturing process of the flow-path device concerning 3rd Embodiment of this invention. It is sectional drawing of the flow-path device which concerns on 4th Embodiment of this invention. It is a figure which shows the flow-path device which concerns on 5th Embodiment of this invention. It is a figure which shows the semiconductor device which concerns on 6th Embodiment of this invention. It is a figure which shows the flow-path device concerning a reference example.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. The following embodiments are examples of the embodiments of the present invention, and the present invention is not limited to these embodiments.

  Note that in the drawings referred to in this embodiment, the same portion or a portion having a similar function is denoted by the same reference symbol or a similar reference symbol (a reference symbol simply including A, B, etc. after a number) and repeated. The description of may be omitted. In addition, the dimensional ratio in the drawing may be different from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

<Background to the Present Invention>
The present inventor arrived at the idea of using electroosmotic flow while developing the flow channel device, and studied the flow channel device having the structure shown in FIG.

  11A is a top view of the flow channel device 1 shown as a reference example, and FIG. 11B is a cross-sectional view of the flow channel device of FIG. 11A cut along A-A ′. FIG. 11C is an enlarged view of a portion surrounded by a dotted line C in FIG.

  In the flow path device 1 shown in FIGS. 11A and 11B, a flow path 3 is formed between the first substrate 2a and the second substrate 2b, and the flow path 3 has a predetermined interval. The electrode 4 is arranged. In addition, the flow path 3 is obtained when the flow path forming groove is formed in advance by etching a portion that becomes a flow path in the second substrate 2b, and the first substrate 2a and the second substrate 2b are arranged to face each other. In addition, the gap formed by the flow path forming groove is used.

  Further, the second substrate 2b is provided with a plurality of openings 5a to 5c inside the channel forming groove, and these function as sample inlets or sample outlets of the channel device. In the flow channel device 1, different samples (for example, sample solutions) are respectively introduced from the openings 5a and 5b, mixed using the flow channel 3, and taken out from the opening 5c.

  At this time, the solution introduced from the openings 5a and 5b flows through the flow path 3 using the electroosmotic flow formed using the electrode 4 and reaches the opening 5c. Electroosmosis is a phenomenon in which a liquid moves when a voltage is applied to a place where the liquid and the solid are in contact, and the flow of the liquid generated thereby is called an electroosmotic flow. In the flow channel device 1 shown in FIG. 11A, a voltage is applied to a portion where the flow channel and the solution are in contact with each other using a plurality of electrodes 4, and an electroosmotic flow generated thereby is used.

  In the flow path device 1 having such a structure, the present inventor considered the possibility that the sample solution leaks through a slight gap between the electrode 4 and the first substrate 2a. That is, as shown in FIG. 11C, there may be a gap 6 between the electrode 4 and the first substrate 2a when the electrode 4 is formed. However, it is considered that there is a possibility of leakage to the outside of the flow path 3 through the gap 6.

  In addition, as a method of arranging the electrode in the flow path, there are a method using the through electrode as described above and a method of drawing the wiring in the surface direction outside the flow path instead of the through electrode. In the latter case, wiring is passed through the joint surfaces of the upper and lower substrates that form the flow path, and an isolated electrode cannot be formed in the flow path. In other words, wiring always exists on the channel side wall and is affected by the wall. For example, the portion becomes thicker by the thickness of the wiring, and bonding may not be firmly performed, which may cause liquid leakage. Even if the bonding is successful, the upper and lower substrates are warped at that portion, and there is a risk that the image will be distorted when the flow path is observed with an optical microscope or the like. In addition, a problem that adversely affects the flow of the flow path occurs.

  This invention is made | formed in view of the said problem, prevents the leakage of the fluid from a flow path, and provides the flow path device shown below as a highly reliable flow path device.

(First embodiment)
<Structure of channel device>
FIG. 1A is a top view showing the flow channel device 11 according to the first embodiment of the present invention, and FIG. 1B shows the flow channel device 11 of FIG. It is sectional drawing cut | disconnected. 1C is an enlarged view of a portion surrounded by a dotted line C in FIG. 1B, and FIG. 1D is an enlarged view of a portion surrounded by a dotted line D in FIG. is there.

  In the flow path device 11 according to the present embodiment, a flow path 13 is provided between the first substrate 12a and the second substrate 12b facing the first substrate 12a, and the flow path device 11 has a flow path inside the first substrate 12a. The electrode 14 having a surface (a surface including a surface exposed to the flow path 13) facing 13 is arranged at a predetermined interval. Part of the surface of the electrode 14 that faces the flow path 13 is exposed to the flow path 13, and an electroosmotic flow is generated in the flow path 13 using these electrodes 14. . Note that the flow path device 11 may further include another substrate, or at least one of the first substrate 12a, the second substrate 12b, and the other substrate may be configured by a laminated body.

  As the first substrate 12a and the second substrate 12b, a semiconductor substrate made of a semiconductor material such as silicon, gallium nitride, or silicon carbide may be used, or a glass substrate (blue plate glass, low expansion glass, non-alkali glass, or the like). Or a resin substrate may be used. In the flow channel device 11 of the present embodiment, both the first substrate 12a and the second substrate 12b are glass substrates having a thickness in the range of 100 μm to 1 mm, for example.

  The flow path device 11 according to the present embodiment has a structure in which two different flow paths are joined together to mix different solutions in the flow path and finally generate a mixed solution. Therefore, the channel 13 is provided with two openings 15a and 15b (input port), and different solutions are input from both. And the mixed solution produced | generated in the flow path 13 is taken out from the opening part 15c (extraction port). The form of the flow path is not limited to that shown in the figure.

  Here, the major difference between the flow channel device 11 according to the present embodiment and the flow channel device 1 according to the reference example shown in FIG. 11 is that, as shown in FIG. Even if the gap 16 exists between the first substrate 12a and the first substrate 12a partially covers the boundary between the electrode 14 and the first substrate 12a, no solution leaks through the gap 16. Is a point.

  Specifically, in the cross-sectional view shown in FIG. 1C, the boundary between the electrode 14 and the first substrate 12a, that is, in the enlarged view shown in FIG. The boundary between the electrode 14 and the substrate 12a that defines the electrode surface is covered with a covering portion 17 that is formed of a part of the first substrate 12a (a portion made of the same material as the first substrate 12a). Yes. That is, as shown in the enlarged views of FIG. 1C and FIG. 1D, the electrode 14 is characterized in that the periphery of the surface facing the flow path 13 of the electrode 14 is covered with the covering portion 17. .

  As a result, the boundary between the electrode 14 and the first substrate 12a is covered with the covering portion 17 and does not come into contact with the fluid flowing through the flow path 13, so that the fluid flows through the gap 16 generated at the boundary. Problems such as leakage to the outside of the flow path 13 can be prevented.

<Manufacturing method of flow channel device>
Next, the manufacturing method of the flow path device 11 according to the present embodiment will be described with reference to FIGS.

  First, as the first substrate 12a, for example, a glass substrate having a thickness of 100 μm to 1 mm is prepared. As shown in FIG. 2A, laser processing, reactive ion etching (RIE) is performed on the back surface of the first substrate 12a. The electrode forming groove 21 (also referred to as a trench) is formed by a known method such as). Here, the back surface of the first substrate 12a refers to a surface opposite to the surface of the first substrate 12a, which will be described later, and does not form a flow path among two planes that are effectively used in the first substrate 12a. Refers to the side surface.

  The outer shape (edge shape) of the electrode forming groove portion 21 is arbitrary, and may be circular or polygonal, and the size may be appropriately selected within a range of, for example, 10 μm to 100 μm. Further, the depth of the electrode forming groove 21 depends on the thickness of the glass substrate used as the first substrate 12a, but may be appropriately selected within a range of 100 μm to 500 μm, for example.

  Next, as shown in FIG. 2B, the electrode forming groove portion 21 is filled with a conductive material such as a metal material such as copper or tungsten to form the electrode 14. A known method can be used for forming the electrode 14, but an electrolytic plating method using a seed layer, a method of sucking a molten conductive material using a pressure difference, or a conductive paste material is filled. A method or the like may be used. Further, after the electrode 14 is formed, CMP (Chemical Mechanical Polishing) may be performed on the exposed electrode surface.

  Next, as shown in FIG. 2C, a mask 22 is formed on the surface of the first substrate 12a. Here, the surface of the first substrate 12a refers to a surface that forms the flow path 13 out of two planes that are effectively used in the first substrate 12a (that is, a surface facing the second substrate 12b). Further, the mask 22 may be formed using a material that can ensure a selection ratio when the first substrate 12a is etched.

  The mask 22 is provided at a position where the above-described “coating portion 17” is formed later. Specifically, it is formed along the periphery of the surface facing the flow path 13 of the electrode 14 so as to cover the periphery (the boundary between the electrode 14 and the first substrate 12a) of the electrode 14 shown in FIG. Has been.

  Next, as shown in FIG. 3A, wet etching using a hydrofluoric acid solution is performed on the first substrate 12a made of glass. In this case, as the mask 22, for example, a chromium film mask resistant to hydrofluoric acid may be used. Here, since the etching proceeds isotropically by wet etching, the etching also proceeds below the mask 22.

  In the etching, a protective layer (not shown) resistant to hydrofluoric acid may be formed on the back surface of the first substrate 12a. The protective layer may be an insulating film or a conductive film. However, in consideration of removal later, it is necessary that the protective layer be made of a material that can ensure an etching selectivity with respect to at least the first substrate 12 a and the electrode 14.

  If the etching is continued as it is from the state of FIG. 3A, the mask 22 is lifted off as shown in FIG. 3B, and the covering portion 17 is applied to the portion where the mask 22 is disposed without requiring a mask removing step. The convex part functioning as is easily formed. In the subsequent etching, the entire surface of the first substrate 12a is etched at substantially the same speed, so that the convex portion formed here continues to remain as the covering portion 17 in the end.

  When the etching is further continued, as shown in FIG. 3C, a part of the electrode 14 is exposed, and finally a covering portion 17 is formed so as to cover the boundary between the electrode 14 and the first substrate 12a. The Thereby, the 1st board | substrate 12a of the flow-path device 11 which concerns on this embodiment shown in FIG. 1 is completed.

  Thereafter, a second substrate 12b having a channel forming groove portion finally formed in a portion to become the channel 13 and openings 15a to 15c formed inside thereof is prepared, and the first substrate 12a is prepared. When the second substrate 12b and the second substrate 12b are bonded to each other, the first substrate 12a of the flow channel device 11 according to the present embodiment shown in FIG. 1 is completed.

  At this time, the height of the flow path 13 (the distance between the first substrate 12a and the second substrate 12b constituting the flow path 13) is the depth of the flow path forming groove formed in the second substrate 12b. And can be set in the range of 10 to 100 μm depending on the application of the flow path 13.

  In the first embodiment, a glass substrate is used as the second substrate 12b in the same manner as the first substrate 12a, and an adhesive composed of a resin is used for bonding the first substrate 12a and the second substrate 12b. Used. In addition, it is possible to use a semiconductor substrate as one of the first substrate 12a and the second substrate 12b. In that case, the first substrate 12a and the second substrate 12b may be bonded together by a known anodic bonding.

(Second Embodiment)
<Structure of channel device>
A flow channel device 41 according to a second embodiment of the present invention will be described with reference to FIG. 4A is a top view showing the flow channel device 41 according to the present embodiment, and FIG. 4B is a cross-sectional view of the flow channel device 41 of FIG. 4A cut along AA ′. It is. 4C is an enlarged view of a portion surrounded by a dotted line C in FIG. 4B, and FIG. 4D is an enlarged view of a portion surrounded by a dotted line D in FIG. is there.

  The flow channel device 41 according to the present embodiment is different from the flow channel device 11 according to the first embodiment in a method of forming a covering portion that covers the boundary between the electrode 14 and the first substrate 12a. Other points are the same as those of the flow channel device 11 according to the first embodiment.

  Specifically, in the present embodiment, an opening 42 is provided on the surface of the first substrate 12a, and a part of the surface of the electrode 14 facing the flow path 13 is exposed through the opening 42. . At that time, as shown in FIG. 4D, the peripheral edge of the exposed surface of the electrode 14 (that is, the peripheral edge of the opening 42) is formed inside the peripheral edge of the surface of the electrode 14 that faces the flow path 13. As a result, the boundary between the electrode 14 and the first substrate 12a is covered with the covering portion 43 formed by a part of the first substrate 12a, and the fluid flows through the gap 16 generated at the boundary. It is possible to prevent problems such as leakage to the outside.

<Manufacturing method of flow channel device>
Next, a manufacturing method of the flow channel device 41 according to the present embodiment will be described with reference to FIG.

  First, the electrode 14 is formed inside the back surface side of the first substrate 12a to obtain the state of FIG. Since the steps up to here are the same as those described with reference to FIGS. 2A and 2B in the first embodiment, description thereof is omitted here.

  Next, as shown in FIG. 5B, an etching process is performed on the surface of the first substrate 12a. The etching process may be wet etching or dry etching. Moreover, you may grind mechanically using CMP etc. The purpose of this step is to leave the material constituting the first substrate 12a (glass in this embodiment) with a film thickness a above the electrode 14. The portion left with this film thickness a finally forms the covering portion 43 in the flow channel device 41 of the present embodiment.

  Here, the film thickness a remaining in the step shown in FIG. 5B may be determined according to the etching method and the etching accuracy when the opening 42 is formed later. For example, if isotropic etching is assumed, such as wet etching, it is calculated in advance so that the covering portion 43 is finally formed at a desired position in consideration of the etching progress in the lateral direction. It is necessary to keep. On the other hand, if anisotropic etching is assumed as in reactive ion etching, only the etching progress in the vertical direction needs to be considered.

  In the present embodiment, when the size of the electrode forming groove formed on the first substrate 12a (that is, the size of the surface facing the flow path 13 of the electrode 14) is set in the range of 10 μm to 100 μm, the film thickness a is It is preferable to be in the range of 1 μm ≦ a ≦ 45 μm. The reason why the lower limit is set to 1 μm is that in the etching process shown in FIG. 5B, the variation in etching performed on the surface of the first substrate 12a (about ± 1 μm) is taken into consideration. In addition, the upper limit is set to 45 μm, and when the size of the electrode forming groove is 100 μm, the etching progresses in the lateral direction so that the covering portion 43 can be reliably formed when wet etching is adopted. This is because (45 μm on each side) is taken into consideration.

  Next, as shown in FIG. 5C, a mask 45 having an opening 44 is formed. The mask 45 may be made of any material that can ensure an etching selectivity with respect to the first substrate 12a. In this embodiment, the mask 45 is formed by patterning a chromium film. At this time, the position of the opening 44 is the same as the position of the opening 42 described with reference to FIG. 4D, and is formed so as to be located inside the periphery of the surface of the electrode 14 facing the flow path 13. Is done. Further, the size of the opening 44 may be appropriately determined within a range of 1 μm to 10 μm, for example.

  Next, the first substrate 12 a is etched using the mask 45 to form the opening 42. In this embodiment, the etching process is performed by dry etching using reactive ion etching (RIE), but wet etching may be performed. As a result, the boundary between the electrode 14 and the first substrate 12a is covered with the covering portion 43 formed by a part of the first substrate 12a.

  When the first substrate 12a on which the electrode 14 is formed is completed in this manner, the flow path device 41 according to the present embodiment shown in FIG. 4 is completed by laminating with the second substrate 12b by the same method as the first embodiment. That's fine. Also in the flow path device 41 according to the second embodiment, the boundary between the electrode 14 and the first substrate 12a has a structure that is covered by the covering portion 43 configured by a part of the first substrate 12a, and is generated at the boundary. The problem that the fluid leaks to the outside of the flow path 13 through the gap 16 can be prevented.

(Third embodiment)
<Structure of channel device>
A flow channel device 61 according to a third embodiment of the present invention will be described with reference to FIG. FIG. 6A is a top view showing the flow channel device 61 according to this embodiment, and FIG. 6B is a cross-sectional view of the flow channel device 61 of FIG. 6A cut along AA ′. It is. 6C is an enlarged view of a portion surrounded by a dotted line C in FIG. 6B, and FIG. 6D is an enlarged view of a portion surrounded by a dotted line D in FIG. 6A. is there.

  The flow path device 61 according to the present embodiment is different from the flow path device 11 according to the first embodiment in a method of forming a covering portion that covers the boundary between the electrode 14 and the first substrate 12a. Other points are the same as those of the flow channel device 11 according to the first embodiment.

  Specifically, in this embodiment, an insulating layer 63 having an opening 62 is provided on the surface of the first substrate 12a, and the insulating layer 63 is used as a covering portion that covers the boundary between the electrode 14 and the first substrate 12a. It is structured to function.

  At this time, the insulating layer 63 may be made of a material different from that of the first substrate 12a, an insulating film such as silicon oxide or silicon nitride, or a resin film may be used. However, since it comes into contact with the flow path 13, it is desirable to use a material having low reactivity with the fluid flowing through the flow path 13.

  The opening 62 is a through hole provided in the insulating layer 63 to expose a part of the surface of the electrode 14 that faces the flow path 13, and as shown in FIG. 6D, the exposed surface of the electrode 14. The peripheral edge (that is, the peripheral edge of the opening 62) is formed inside the peripheral edge of the surface of the electrode 14 that faces the flow path 13. As a result, the boundary between the electrode 14 and the first substrate 12a is covered with the insulating layer 63 functioning as the covering portion 43, and fluid leaks to the outside of the flow path 13 through the gap 16 generated at the boundary. The problem can be prevented.

<Manufacturing method of flow channel device>
Next, a manufacturing method of the flow path device 61 according to the present embodiment will be described with reference to FIG.

  First, the electrode 14 is formed inside the first substrate 12a to obtain the state shown in FIG. The process of forming the electrode 14 inside the first substrate 12a is the same as the process described with reference to FIGS. 2A and 2B in the first embodiment, and the description thereof is omitted here. To do. However, the present embodiment is different in that an electrode forming groove is formed on the surface of the first substrate 12a.

  Next, as shown in FIG. 7B, an insulating layer 63 is formed on the surface of the first substrate 12a. The insulating layer 64 is an insulating film such as silicon oxide or silicon nitride or a resin film, and the film thickness a is preferably set as appropriate within a range of 1 μm ≦ a ≦ 45 μm. The numerical setting of the film thickness a is the same as in the second embodiment.

  Next, as shown in FIG. 7C, the insulating layer 63 is etched using a mask (not shown) (for example, a resist mask) to form an opening 62. Thus, the insulating layer 63 having the opening 62 is formed. Note that the position and size of the opening 62 and the method of forming the opening 62 are the same as the formation of the opening 42 described in the second embodiment, and thus description thereof is omitted here. Through the process of FIG. 7C, the boundary between the electrode 14 and the first substrate 12a is covered with an insulating layer 63 that functions as a covering portion.

  When the first substrate 12a on which the electrode 14 is formed is completed in this way, the second substrate 12b is bonded by the same method as in the first embodiment, and the flow channel device 61 according to the present embodiment shown in FIG. 6 is completed. That's fine. Also in the flow path device 61 according to the third embodiment, the boundary between the electrode 14 and the first substrate 12a is covered with an insulating layer 63 that functions as a covering portion, and the fluid flows through the gap 16 generated at the boundary. Can be prevented from leaking out of the flow path 13.

(Fourth embodiment)
A flow channel device 81 according to a fourth embodiment of the present invention will be described with reference to FIG. FIG. 8 is a cross-sectional view taken along the flow path 13 of the flow path device 81 according to the fourth embodiment.

  The basic structure of the flow channel device 81 according to this embodiment is the same as that of the flow channel device 41 according to the second embodiment, except that a flow channel expansion portion 82 is provided in a part of the flow channel 13. Different from the flow path device 41 according to the second embodiment. Other points are the same as those of the flow channel device 41 according to the second embodiment.

  In FIG. 8, the flow path expanding portion 82 is provided to reduce the resistance that the fluid flowing in the flow path 13 receives from the flow path 13 (resistance that is received from the wall surface of the flow path 13 like so-called pipe resistance). Specifically, an area where the thickness of the second substrate 12b is further reduced is formed inside the flow path forming groove that forms the flow path 13 in the second substrate 12b, and the height of the flow path 13 corresponding to the area is increased. The resistance is reduced by increasing the thickness.

  The channel expanding portion 82 can be formed by etching a part of the second substrate 12b. The etching may be laser processing, or may be wet etching or dry etching using a separate mask. However, in order to effectively reduce the resistance, it is desirable that the shape of the region where the thickness of the second substrate 12b is reduced has a smooth slope, and therefore, it is preferable to form by isotropic etching. When the flow path extension 82 is formed by using isotropic etching, the etching amount in the horizontal direction and the vertical direction is the same with respect to the surface of the substrate 12b, so that about half of the distance between the adjacent electrodes 14 is the flow path. This is the amount of etching in the vertical direction in the extended portion 82 (depth from the surface of the second substrate 12b). Therefore, typically, the etching process may be performed so that the height of the flow path in the flow path expanding portion 82 is two to three times the height of the flow path at the position of the electrode 14.

  As described above, the flow channel device 81 according to the present embodiment is provided with the flow channel expansion portion 82 in a part of the flow channel 13, and in addition to the effect produced by the flow channel device 41 according to the second embodiment, There is an effect that the resistance that the fluid flowing through the flow path 13 receives from the flow path 13 can be reduced.

(Fifth embodiment)
A flow channel device 91 according to a fifth embodiment of the present invention will be described with reference to FIG. FIG. 9A is a top view showing the flow path device 91 according to the present embodiment, and FIG. 9B is a cross-sectional view of the flow path device 91 of FIG. 9A cut along AA ′. It is. FIG. 9C is a cross-sectional view of the flow path device 91 of FIG. 9B cut along BB ′.

  The flow path device 91 according to the present embodiment is the second in that the height of the flow path is ensured by an insulating layer provided between the first substrate 92a and the second substrate 92b facing the first substrate 92a. Different from the flow channel device 41 according to the embodiment. Other points are the same as those of the flow channel device 41 according to the second embodiment.

  9A and 9B, a flow path 93 is formed between the first substrate 92a and the second substrate 92b, and an electrode 94 is provided in the flow path 93 with a certain interval. Is arranged. The boundary between the electrode 94 and the first substrate 92a is covered with a first insulating layer 95 that functions as a covering portion, and a phenomenon in which fluid flowing in the flow path 93 leaks through the boundary between the electrode 94 and the first substrate 92a. It has a structure to prevent.

  Further, in the flow channel device 91 of the present embodiment, the second insulating layer 96 is provided between the first substrate 92a and the second substrate 92b, and the first substrate 92a and the second substrate 92a are interposed via the second insulating layer 96. The substrate 92b is bonded. As a result, the height of the flow path 93 (the distance between the exposed surface of the electrode 94 to the flow path 93 and the second substrate 92b) is determined by the total film thickness of the first insulating layer 95 and the second insulating layer 96. It will be. The total film thickness of the first insulating layer 95 and the second insulating layer 96 may be set to be in the range of 10 to 100 μm, although it varies depending on the use of the flow channel device.

  When the structure of the flow channel device 91 of the present embodiment is adopted, it is only necessary to form openings 97a and 97b for the second substrate 92b. For example, as described in the first embodiment, the flow path is There is no need to bother forming the channel forming groove for forming. Further, in order to bond the first substrate 92a and the second substrate 92b through the second insulating layer 96, for example, if a resin is used as the second insulating layer 96, the substrates are bonded to each other without providing a separate adhesive. Is possible.

(Sixth embodiment)
In the present embodiment, an example in which the flow path device of the present invention is used as a cooling flow path for a semiconductor device is shown. Specifically, an example in which the basic structure of the flow path device 11 according to the first embodiment is applied to a semiconductor device will be described with reference to FIG.

  FIG. 10A is a top view of the semiconductor device 101 according to the present embodiment, and FIG. 10B is a cross-sectional view of the semiconductor device 101 shown in FIG. 10A cut along AA ′. FIG. 10C is a cross-sectional view of the semiconductor device 101 shown in FIG. 10A cut along BB ′.

  In the semiconductor device 101 according to the present embodiment, the entire flow path described for the flow path device 11 according to the first embodiment is used for the purpose of circulating cooling water, and is formed on the first substrate 102a or the second substrate 102b. The structure promotes heat dissipation of the semiconductor element.

  10A and 10B, the first substrate 102a is a glass substrate, and the second substrate 102b is a silicon substrate. In this embodiment, the 1st board | substrate 102a and the 2nd board | substrate 102b are adhere | attached by well-known anodic bonding. Further, a semiconductor integrated circuit (not shown) composed of semiconductor elements such as transistors is formed on the back surface (the surface on the side not facing the flow path 103) of the second substrate 102b by a known semiconductor process. .

  In this embodiment, the second substrate 102b is a silicon substrate and a semiconductor integrated circuit is formed on the back surface thereof. However, the first substrate 102a is a silicon substrate and the semiconductor integrated circuit is formed on the back surface. May be.

  In the first substrate 102a, electrodes 104 having a surface (a surface including a surface exposed to the flow channel 103) facing the flow channel 103 are arranged at a predetermined interval. Part of the surface of the electrode 104 that faces the flow path 103 is exposed to the flow path 103, and the electrode 104 is used to generate an electroosmotic flow in the flow path 103. . In the semiconductor device 101 according to the present embodiment, the second substrate 102b is previously formed so that the inlet 105 and the outlet 106 of the flow path 103 are formed when the first substrate 102a and the second substrate 102b are bonded together. Etching is applied to the surface.

  In the semiconductor device 101 according to the present embodiment, the electrode 104 is provided so as to penetrate the first substrate 102a. However, like the flow path device 61 according to the third embodiment, the electrode is formed on the first substrate 102a. A groove portion may be provided, and the electrode 104 may be formed therein as a buried electrode.

  The semiconductor device 101 according to the present embodiment adopting the above structure secures a flow path 103 for circulating cooling water in the vicinity of the semiconductor integrated circuit formed on the first substrate 102a or the second substrate 102b. Thus, a semiconductor device with high reliability and excellent heat dissipation characteristics can be realized.

  In the present embodiment, an example in which the basic structure of the flow path device 11 according to the first embodiment (a structure in which the boundary between the electrode and the first substrate is covered with a covering portion) is applied to the semiconductor device has been described. You may apply the basic structure of the flow-path device which concerns not only on embodiment but 2nd-5th embodiment.

11: channel device 12a: first substrate 12b: second substrate 13: channel 14: electrodes 15a to 15c: opening 16: gap 17: covering portion

Claims (12)

A flow path device comprising a first substrate, a second substrate facing the first substrate, and a flow path formed between the first substrate and the second substrate,
Inside the first substrate, an electrode having a surface facing the flow path is provided,
The surface of the electrode facing the flow path has a region exposed to the flow path,
A flow channel device, wherein a peripheral edge of a surface facing the flow channel is covered with a covering portion made of a substance different from the electrode.   The flow path device according to claim 1, wherein the covering portion is a part of the first substrate.   The flow channel device according to claim 1, wherein the covering portion is an insulating layer provided on a surface of the first substrate.   The flow channel device according to claim 1, wherein the electrode is provided so as to penetrate the first substrate. A plurality of the electrodes are provided,
The flow path device according to any one of claims 1 to 4, wherein an electric field can be formed between two adjacent electrodes among the plurality of electrodes provided.   The flow path forming groove is provided on the surface of the second substrate, and the flow path is formed by the flow path forming groove and the surface of the first substrate. 2. The flow channel device according to item 1.   The flow path is formed by the first substrate, the second substrate, and an insulating layer provided between the first substrate and the second substrate. The flow path device according to Item. A flow path device manufacturing method comprising: a first substrate; a second substrate facing the first substrate; and a flow path formed between the first substrate and the second substrate,
Forming an electrode forming groove on the back surface of the first substrate;
Filling the electrode forming groove with a conductive material to form an electrode;
Etching the surface of the first substrate to expose a portion of the electrode facing the flow path;
Disposing the second substrate to face the surface of the first substrate;
A method for manufacturing a flow channel device.   The step of exposing a part of the surface of the electrode facing the flow path includes a step of forming an opening hole reaching the electrode inside the periphery of the bottom surface of the electrode forming groove. The manufacturing method of the flow-path device described. A flow path device manufacturing method comprising: a first substrate; a second substrate facing the first substrate; and a flow path formed between the first substrate and the second substrate,
Forming an electrode forming groove on the surface of the first substrate;
Filling the electrode forming groove with a conductive material to form an electrode;
Forming an insulating layer covering at least the periphery of the electrode on the surface of the first substrate;
Disposing the second substrate to face the surface of the first substrate;
A method for manufacturing a flow channel device.   The manufacturing method of the flow-path device of any one of Claims 8-10 which further includes the process of forming the groove part for flow-path formation in the surface of the said 2nd board | substrate. The manufacturing method of the flow-path device of any one of Claims 8-10 which further includes the process of bonding the said 1st board | substrate and a said 2nd board | substrate through an insulating layer with a film thickness of 10-100 micrometers.

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