CN109065684A - A kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure - Google Patents
A kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims abstract description 97
- 239000000463 material Substances 0.000 claims abstract description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 168
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 18
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 16
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000012792 core layer Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000026267 regulation of growth Effects 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
The present invention relates to group iii nitride semiconductor field of photoelectric material, propose a kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure, including bottom barrier layer, push up barrier layer, positioned at bottom barrier layer and the intermediate barrier layer pushing up multiple InGaN quantum well layers between barrier layer and being arranged between each InGaN quantum well layer, it is characterized in that, it further include that close to the InGaN quantum well layer and the first strain reducing layer thereunder is set, and close to the InGaN quantum well layer and the second strain reducing layer for being disposed there above, first strain reducing layer and the second strain reducing layer are the InGaN layer that In component is lower than 10%, the intermediate barrier layer includes strain compensation layer, the strain compensation layer is that lattice constant is less than the bottom barrier layer and pushes up the barrier layer of barrier layer.The present invention is provides a kind of novel active area structure to promote GaN base blue green light LED and efficiency of laser.
Description
Technical field
The present invention relates to group iii nitride semiconductor field of photoelectric material, in particular to a kind of to contain strain modulated structure
InGaN/GaN multi-quantum pit structure.
Background technique
The invention of Quantum Well is the important breakthrough in semiconductor material development history with milestone significance.Quantum Well concept
It proposes to start from the silent double heterojunction proposed of Alfero husbands in 1963 and Crow, then, 1970, using this double-heterostructure,
The semiconductor laser that First room temperature continuously emits comes out.The concept for the superlattices that the same year, Jiang Qi and Zhu Zhaoxiang are proposed, they
If imagined with two kinds of good materials of Lattice Matching alternately growth periodicity structure, the thickness of every layer material 100nm with
Under, then electronics will generate oscillation along the movement of the direction of growth, can be used for manufacturing microwave device.1972, Charles H.
Henry is when studying the light limiting structure of double heterojunction, it is appreciated that double heterojunction is also carrier limiting structure simultaneously, by reason
It is found by calculating, when the active layer thickness of double-heterostructure is reduced to 100nm or less, quantum limitation effect can be generated.1973
Year, W. Wiegmann has prepared quantum well structure using molecular beam epitaxy technique for the first time.1975, AT&T Labs's preparation
First quantum-well laser is gone out.Later, quantum well structure obtains in the opto-electronic devices such as semiconductor laser, LED, detector
It obtained and was widely applied.
The most typical application of quantum well structure is exactly the active area as semiconductor laser and LED.Wherein InGaN/GaN
Newcomer of the multiple quantum wells as Quantum Well family, obtains immense success in GaN base blue green light LED and laser, is generation
Boundary's illumination and display market bring revolutionary variation.But InGaN/GaN Quantum Well itself works as hair there is also intrinsic limitation
When optical wavelength is mobile to long wave length direction, with the raising of In component, the lattice mismatch between InGaN well layer and GaN barrier layer is fast
Speed increases, and compressive strain improves rapidly in InGaN well layer, leads to the appearance strong polarity effect in well layer, and generate a large amount of mismatch bits
It is wrong.Strong polarity effect tilts Quantum Well energy band, and electronics is spatially separating with hole wave functions, leads to radiation recombination efficiency substantially
Degree reduces, and a large amount of misfit dislocations mean a large amount of non-radiative recombination center.Strong polarity effect and high dislocation density are greatly
The raising of InGaN/GaN multiple quantum wells internal quantum efficiency is limited, the promotion of GaN base LED and laser performance is also limited.
It is communicated up in addition, the stress in quantum well layer can penetrate GaN barrier layer, causes the internal stress in InGaN well layer successively to increase, lead
Polarity effect and dislocation density is caused to further increase.As can be seen that the problem of InGaN/GaN multiple quantum wells with strain
It is related, problem above is solved, key, which is that, is modulated the strain in InGaN/GaN multiple quantum wells.
Summary of the invention
The shortcomings that present invention is for strong polarity effect in InGaN/GaN multiple quantum wells and high defect concentration, it is to be solved
Technical problem are as follows: a kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure is provided, to promote GaN base blue green light
LED and efficiency of laser provide a kind of novel active area structure.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows: a kind of to contain strain modulated structure
InGaN/GaN multi-quantum pit structure, including bottom barrier layer, top barrier layer, multiple InGaN quantum between bottom barrier layer and top barrier layer
Well layer and the intermediate barrier layer being arranged between each InGaN quantum well layer further include close to the InGaN quantum well layer and being arranged
The first strain reducing layer thereunder, and close to the InGaN quantum well layer and be disposed there above second strain subtract
Few layer, first strain reducing layer and the second strain reducing layer are the InGaN layer that In component is lower than 10%, the intermediate barrier layer
Including strain compensation layer, the strain compensation layer is that lattice constant is less than the bottom barrier layer and pushes up the barrier layer of barrier layer.
The intermediate barrier layer further includes close to barrier layer on the strain compensation layer and the GaN that is located above and below it
With barrier layer under GaN.
The material of strain compensation layer is any one in tri- kinds of materials of AlN, AlGaN and AlGaInN, or any several
Combination.
The top barrier layer and bottom barrier layer are GaN barrier layer.
The strain compensation layer that the top barrier layer and bottom barrier layer include GaN barrier layer and be arranged among GaN barrier layer.
The emission wavelength of the InGaN/GaN multi-quantum pit structure containing strain modulated structure is blue green light to green-yellow light
Any wavelength in wavelength band.
Compared with the prior art, the invention has the following beneficial effects:
(1) internal strain for reducing InGaN Quantum Well weakens piezoelectric polarization effect: the first strain reducing layer and the second strain
Reducing layer is the InGaN layer that In component is lower than 10%, and lattice constant is between InGaN quantum well layer and GaN barrier layer, energy
Enough lattice mismatches effectively between buffering InGaN well layer and GaN barrier layer, to reduce the internal strain of InGaN quantum well layer.With
The reduction of internal strain, by strain caused by piezoelectric polarization effect also weaken therewith；
(2) misfit dislocation density that trap builds interface is reduced: since the first strain reducing layer and the second strain reducing layer buffer
Lattice mismatch between well layer and barrier layer, therefore the misfit dislocation density that trap builds interface is significantly reduced；
(3) eliminate the stress accumulation in InGaN/GaN multi-quantum pit structure: strain compensating structure is among barrier layer, due to
Strain compensation layer lattice constant is less than GaN barrier layer, is in tensile strain state, the strain that can be effectively isolated between each layer Quantum Well
Coupling, prevents stress to be communicated up, eliminates the stress accumulation of multi-quantum pit structure.
Detailed description of the invention
Fig. 1 is the InGaN/GaN multi-quantum pit structure schematic diagram containing strain modulated structure that the embodiment of the present invention proposes；
Fig. 2 is the InGaN/GaN multi-quantum pit structure schematic diagram containing strain modulated structure that another embodiment of the present invention proposes；
Fig. 3 InGaN/GaN multi-quantum pit structure proposed by the present invention containing strain modulated structure is applied outside green (light) laser
Schematic diagram when prolonging in structure；
Fig. 4 is that the InGaN/GaN multi-quantum pit structure proposed by the present invention containing strain modulated structure is applied in GaN base green light
Schematic diagram when in LED epitaxial structure.
Specific embodiment
It in order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below will be in the embodiment of the present invention
Technical solution be clearly and completely described, it is clear that described embodiment is a part of the embodiments of the present invention, without
It is whole embodiments；Based on the embodiments of the present invention, those of ordinary skill in the art are not before making creative work
Every other embodiment obtained is put, shall fall within the protection scope of the present invention.
The present invention aiming at the problem that strong polarity effect, high defect concentration and stress accumulation in InGaN/GaN multiple quantum wells,
Strain modulated structure (including strain reduces structure and strain compensating structure) is introduced in InGaN/GaN multiple quantum wells, is provided
A kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure, to promote GaN base blue green light LED and efficiency of laser
Provide a kind of novel active area structure.
As shown in Figure 1, the InGaN/GaN multi-quantum pit structure containing strain modulated structure proposed for the embodiment of the present invention
Schematic diagram, as shown in Figure 1, the InGaN/GaN multiple quantum wells is a kind of polycyclic structure, n indicates the period of Quantum Well in figure
Number, each period from bottom to top includes the first strain reducing layer, InGaN Quantum Well and the second strain reducing layer, each periodicity
Intermediate barrier layer is provided between structure, the bottom and top of whole cycle are respectively arranged with bottom barrier layer and top barrier layer；That is,
The InGaN/GaN multiple quantum wells includes bottom barrier layer, top barrier layer, multiple InGaN Quantum Well between bottom barrier layer and top barrier layer
Layer and the intermediate barrier layer being arranged between each InGaN quantum well layer further include close to the InGaN quantum well layer and being arranged
First strain reducing layer below, and close to the InGaN quantum well layer and the second strain reducing layer for being disposed there above.
Wherein, in the present embodiment, first strain reducing layer and the second strain reducing layer are In component lower than 10%
InGaN layer, the intermediate barrier layer include strain compensation layer, and the strain compensation layer is that lattice constant is less than the bottom barrier layer and top
The barrier layer of barrier layer, specifically, the material of strain compensation layer can be any one in tri- kinds of materials of AlN, AlGaN and AlGaInN
Kind, or any several combination.
Specifically, the top barrier layer and bottom barrier layer are GaN barrier layer.
In the present embodiment, the first strain reducing layer and the second strain reducing layer be In component the InGaN for being lower than 10%
Layer, lattice constant between InGaN quantum well layer and GaN barrier layer, can effectively buffer InGaN well layer and GaN barrier layer it
Between lattice mismatch, to reduce the internal strain of InGaN quantum well layer.With the reduction of internal strain, the pressure caused by straining
Electric polarization effect also weakens therewith；Since the first strain reducing layer and the second strain reducing layer have buffered between well layer and barrier layer
Lattice mismatch, therefore the misfit dislocation density that trap builds interface is significantly reduced；In addition, also eliminating InGaN/GaN multiple quantum wells
Stress accumulation in structure: strain compensating structure is among barrier layer, since strain compensation layer lattice constant is less than GaN barrier layer,
In tensile strain state, the Strain-coupled that can be effectively isolated between each layer Quantum Well prevents stress to be communicated up, and eliminates volume
The stress accumulation of sub- well structure.
As shown in Fig. 2, the InGaN/GaN multiple quantum wells containing strain modulated structure proposed for another embodiment of the present invention
Structural schematic diagram, the structure of the present embodiment and the difference of previous embodiment be, the centre being arranged between each periodic structure
The structure of barrier layer is different, and in the present embodiment, intermediate barrier layer further includes close to the strain compensation layer and dividing in addition to strain compensation layer
Barrier layer barrier layer and GaN under is not positioned above on the GaN with lower section.
Wherein, in the present embodiment, first strain reducing layer and the second strain reducing layer are In component lower than 10%
InGaN layer, specifically, the material of strain compensation layer can be any one in tri- kinds of materials of AlN, AlGaN and AlGaInN,
Or any several combination in these three materials.
Specifically, the top barrier layer and bottom barrier layer are GaN barrier layer.In addition, in the present embodiment, the top barrier layer and bottom barrier layer
Structure can also as intermediate barrier layer, i.e., its may include strain compensation layer and close to the strain compensation layer and respectively position
Side and barrier layer under barrier layer on the GaN of lower section and GaN thereon.
In addition, the InGaN/GaN multi-quantum pit structure containing strain modulated structure that the embodiment of the present invention proposes, shines
Wavelength is any wavelength in blue green light to green-yellow light wavelength band, can specifically be realized by In component in change Quantum Well
The movement of wavelength.
InGaN/GaN multi-quantum pit structure provided by the present invention can be used as blue and green light and yellowish green light laser
Active area, wavelength movement can be realized by changing the In component of well layer.Illustrate this hair by taking green (light) laser as an example below
Multi-quantum pit structure provided by bright is used as the specific embodiment of semiconductor laser active area.The green (light) laser extension
Structure is as shown in figure 3, from bottom to top include: wave under n-GaN substrate, n-GaN buffer layer, n-AlGaN lower limit layer, n-InGaN
Conducting shell, mqw active layer, p-AlGaN electronic barrier layer, the upper ducting layer of p-InGaN, p-AlGaN containing strain modulated structure
Upper limiting layer, p-GaN contact layer.Specific preparation flow is as follows:
(1) GaN substrate is put into MOCVD reaction chamber, is passed through hydrogen as carrier gas, increases temperature to 1130oC to substrate surface
Oxide layer and impurity carry out HIGH TEMPERATURE PURGE；
(2) temperature is reduced to 1070oC, is passed through ammonia, nitridation 3 minutes is carried out to substrate surface；
(3) it is passed through trimethyl gallium (TMGa) and Si doped source, grows n-GaN buffer layer, cuts off TMGa and Si doped source after the completion
Supply；
(4) temperature is increased to 1100oC, is passed through TMGa, trimethyl aluminium (TMAl) and Si doped source, is grown and limit under n-AlGaN
Layer；
(5) it is cooled to 860oC, while switching to hydrogen nitrogen mixed gas atmosphere, after temperature is stablized, is passed through TMGa, trimethyl indium
(TMIn) and Si doped source, growth n-InGaN lower waveguide layer cut off the supply of TMIn and Si doped source after the completion；
(6) at same temperature, nitrogen atmosphere is switched to, the source TEGa is passed through, first time GaN barrier layer is grown, cuts off TEGa after the completion
Source supply；
(7) it reduces temperature and is passed through TMIn and TEGa, one strain reducing layer of growth regulation after temperature is stablized to 720oC；
(8) equally at a temperature of, improve TMIn flow, grow InGaN quantum well layer；
(9) equally at 720 oC, TMIn flow is reduced, grows the second strain reducing layer of InGaN, TMIn is cut off after the completion and supplies
It answers；
(10) equally at 720oC, GaN low temperature cap rock, when to avoid heating up in next step, InGaN quantum well layer and strain are grown
It reduces layer component and uncontrollable variation occurs, cut off TEGa supply after the completion；
(11) it is warming up to 860oC, after temperature is stablized, the source TEGa is passed through, grows GaN barrier layer；
(12) equally at 860 oC, it is passed through TMAl and the source TEGa, grows AlGaN strain compensation layer, cuts off the source TMAl after the completion
Supply；
(13) equally at 860 oC, GaN barrier layer is grown, forms GaN/ strain compensation layer/GaN sandwich structure barrier layer, it is complete
It is supplied at the rear source cutting TEGa；
(14) step (7) ~ (13) n times are repeated, n period Quantum well active district is formed；
(15) temperature is increased to 910oC, while carrier gas is switched to hydrogen by nitrogen, after temperature is stablized, is passed through TMAl, TMGa
And Mg doped source, p-AlGaN electronic barrier layer is grown, cuts off the supply of TMAl, TMGa and Mg doped source after the completion；
(16) temperature is reduced to 860oC, is switched to hydrogen nitrogen mixed gas atmosphere, after temperature is stablized, is passed through TMGa, TMIn and Mg doping
Source grows ducting layer on p-InGaN, cuts off the supply of TMGa, TMIn and Mg doped source after the completion；
(17) temperature is increased to 910 oC, while switching to hydrogen atmosphere, after temperature is stablized, is passed through TMGa, TMAl and Mg doping
Source grows p-AlGaN upper limiting layer, cuts off the supply of the source TMAl after the completion；
(18) at the same temperature, p-GaN contact layer is grown, improves doping concentration by increasing the flow of Mg doped source,
Cutting TMGa and Mg doped source are supplied after the completion；
(19) it reduces temperature and cuts off ammonia supply to 750oC, while carrier gas is switched into nitrogen by hydrogen, anneal 15 minutes, with
Activate the Mg foreign atom in p-GaN.
(20) it is cooled to room temperature, completes growth.
In addition, multi-quantum pit structure provided by the present invention is also used as the active area of GaN base LED, below with GaN base
Embodiments thereof are illustrated for green light LED.The GaN base green light LED epitaxial structure is as shown in Fig. 4, from bottom to top includes
Sapphire Substrate, GaN low temperature forming core layer, u-GaN, n-GaN, strain reducing layer 3, the Quantum Well containing strain modulated structure are active
Area, p-AlGaN electronic barrier layer, p-GaN, specific preparation flow are as follows:
(1) Sapphire Substrate is put into MOCVD reaction chamber, is passed through hydrogen as carrier gas, increases temperature to 1125 oC to substrate table
The oxide layer and impurity in face carry out HIGH TEMPERATURE PURGE；
(2) temperature is reduced to 530 oC, is passed through ammonia, nitridation 5 minutes is carried out to substrate surface；
(3) it is passed through trimethyl gallium (TMGa), grows the GaN low temperature forming core layer of 25nm, cuts off TMGa supply after the completion；
(4) temperature is increased to 1075 oC, high annealing is carried out to GaN low temperature forming core layer, to form size and be evenly distributed
GaN forming core island；
(5) 1040 oC are cooled to, after temperature is stablized, TMGa is passed through, starts the u-GaN three dimensional growth stage, until GaN merges
Form film；
(6) it increases temperature and grows the u-GaN of 2 μ m-thicks to 1070 oC into the u-GaN two-dimensional growth stage；
(7) temperature is increased to 1080oC, is passed through the n-GaN that Si doped source (silane or disilane) grows 1 μ m-thick, is stopped after the completion
Si doped source and TMGa supply；
(8) it is cooled to 860oC, while carrier gas is switched into nitrogen by hydrogen, is passed through triethyl-gallium (TEGa) and trimethyl indium
(TMIn) growth strain reduces layer 3, cuts off the supply of TMIn after the completion；
(9) at the same growth temperature, first layer GaN barrier layer is grown, thickness 35nm cuts off TEGa supply after the completion；
(10) it is cooled to 710oC, after temperature is stablized, is passed through TMIn and TEGa, one strain reducing layer of growth regulation；
(11) equally at 710 oC, TMIn flow is improved, grows InGaN quantum well layer；
(12) equally at 710 oC, TMIn flow is reduced, grows the second strain reducing layer of InGaN, TMIn is cut off after the completion and supplies
It answers；
(13) equally at 710oC, GaN low temperature cap rock, when to avoid heating up in next step, InGaN quantum well layer and strain are grown
It reduces layer component and uncontrollable variation occurs, cut off TEGa supply after the completion；
(14) it is warming up to 860oC, after temperature is stablized, the source TEGa is passed through, grows GaN barrier layer；
(15) equally at 860 oC, it is passed through trimethyl aluminium (TMAl) and the source TEGa, grows AlGaN strain compensation layer, after the completion
Cut off the supply of the source TMAl；
(16) equally at 860 oC, GaN barrier layer is grown, forms GaN/ strain compensation layer/GaN sandwich structure barrier layer, it is complete
It is supplied at the rear source cutting TEGa；
(17) step (10) ~ (16) n times are repeated, n period Quantum well active district is formed；
(18) temperature is increased to 940oC, while carrier gas is switched to hydrogen by nitrogen, after temperature is stablized, is passed through TMAl, TMGa
And Mg doped source, p-AlGaN electronic barrier layer is grown, cuts off TMAl supply after the completion；
(19) at the same temperature, p-GaN contact layer is grown, improves doping concentration by increasing the flow of Mg doped source,
Cutting TMGa and Mg doped source are supplied after the completion；
(20) it reduces temperature and cuts off ammonia supply to 750oC, while carrier gas is switched into nitrogen by hydrogen, anneal 15 minutes, with
Activate the Mg foreign atom in p-GaN.
(21) it is cooled to room temperature, completes growth.
The present invention aiming at the problem that strong polarity effect, high defect concentration and stress accumulation in InGaN/GaN multiple quantum wells,
Strain modulated structure (including strain reduces structure and strain compensating structure) is introduced in InGaN/GaN multiple quantum wells, is provided
A kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure, to promote GaN base blue green light LED and efficiency of laser
Provide a kind of novel active area structure.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (6)
1. it is a kind of containing strain modulated structure InGaN/GaN multi-quantum pit structure, including bottom barrier layer, top barrier layer, be located at bottom build
Layer and the intermediate barrier layer pushing up multiple InGaN quantum well layers between barrier layer and being arranged between each InGaN quantum well layer, it is special
Sign is, further includes that close to the InGaN quantum well layer and the first strain reducing layer thereunder is arranged, and close to described
InGaN quantum well layer and the second strain reducing layer being disposed there above, first strain reducing layer and the second strain are reduced
Layer is the InGaN layer that In component is lower than 10%, and the intermediate barrier layer includes strain compensation layer, and the strain compensation layer is that lattice is normal
Number is less than the bottom barrier layer and pushes up the barrier layer of barrier layer.
2. a kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure according to claim 1, feature exist
In, the intermediate barrier layer further include close to barrier layer and GaN on the strain compensation layer and the GaN that is located above and below it
Lower barrier layer.
3. a kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure according to claim 1, feature exist
In the material of strain compensation layer is any one in tri- kinds of materials of AlN, AlGaN and AlGaInN, or any several group
It closes.
4. a kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure according to claim 1, feature exist
In the top barrier layer and bottom barrier layer are GaN barrier layer.
5. a kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure according to claim 1, feature exist
In the strain compensation layer that the top barrier layer and bottom barrier layer include GaN barrier layer and be arranged among GaN barrier layer.
6. a kind of InGaN/GaN multi-quantum pit structure containing strain modulated structure according to claim 1, feature exist
In the emission wavelength of the InGaN/GaN multi-quantum pit structure containing strain modulated structure is blue green light to yellowish green optical band
Any wavelength in range.
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