CN109062511B - Data reading method and related device - Google Patents
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- CN109062511B CN109062511B CN201810836125.6A CN201810836125A CN109062511B CN 109062511 B CN109062511 B CN 109062511B CN 201810836125 A CN201810836125 A CN 201810836125A CN 109062511 B CN109062511 B CN 109062511B
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- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
- G06F3/0613—Improving I/O performance in relation to throughput
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
Abstract
The embodiment of the invention discloses a data reading method, which comprises the following steps: when the data reading fails, the main control chip acquires a data re-reading instruction through the management module; the main control chip determines a first reference voltage value from a preset rereading sequence according to the data rereading instruction, wherein the preset rereading sequence is stored in a rear-end module of the main control chip; and the main control chip reads target data from the flash memory chip according to the first reference voltage value. The embodiment of the invention also discloses a data reading device. The embodiment of the invention provides a method for reducing the bandwidth occupied by data communication between the management module and the back-end module and improving the data reading efficiency of a user under the condition that data needs to be re-read.
Description
Technical Field
The present invention relates to the field of data reading technologies, and in particular, to a data reading method and a related apparatus.
Background
In human life, with the development and wide application of technologies such as internet, cloud computing, internet of things, big data and the like, mass data generated at all times need to be processed and stored, so that higher requirements are put forward on the performance of a storage system. Solid State Drives (SSD) are widely used because of their high read/write speed and low power consumption. The SSD comprises a front end (front end), a main control chip and a flash memory chip, wherein the type of the flash memory chip is a NAND flash memory (nand flash memory), the front end is used for data communication with a host, the main control chip is used for managing the inside of the SSD, the main control chip comprises a rear end module and a management module, the rear end module is used for indicating reading, writing, erasing and other operations of the flash memory chip, the management module is used for managing the flash memory chip, and the flash memory chip is used for storing data.
Unlike conventional hard disks, the use of SSDs is life-intensive, with increasing erasure numbers, reaching a certain number of erasures, with increasing read errors. In the conventional Read-Retry technology, when a Read error occurs, the management module sends a reference voltage value to the back-end module, and the back-end module reads data on the flash memory chip according to the reference voltage value.
When the back-end module needs to acquire the reference voltage value for many times, the data communication of the reference voltage value between the management module and the back-end module occupies a large amount of bandwidth, and the reading efficiency of a user on data is reduced.
Disclosure of Invention
The embodiment of the invention provides a data reading method and a related device, which can reduce the bandwidth occupied by data communication between a management module and a rear-end module and improve the data reading efficiency of a user under the condition that data needs to be re-read.
In view of the above, a first aspect of the present invention provides a method for reading data, including:
when the data reading fails, the main control chip acquires a data re-reading instruction through the management module;
the main control chip determines a first reference voltage value from a preset rereading sequence according to the data rereading instruction, wherein the preset rereading sequence is stored in a rear-end module of the main control chip;
and the main control chip reads target data from the flash memory chip according to the first reference voltage value.
With reference to the first aspect of the embodiment of the present invention, in a first possible implementation manner of the first aspect, the reading, by the main control chip, the target data from the flash memory chip according to the first reference voltage value includes:
the main control chip sends the first reference voltage value to the flash memory chip;
the flash memory chip generates a first reference voltage according to the first reference voltage value;
and the flash memory chip reads the target data according to the first reference voltage.
With reference to the first possible implementation manner of the first aspect of the embodiment of the present invention, in a second possible implementation manner of the first aspect, after the reading, by the flash memory chip, the target data according to the first reference voltage, the method further includes:
if the flash memory chip successfully reads the target data according to the first reference voltage;
the flash memory chip sends a reading success instruction to the main control chip, wherein the reading success instruction carries the target data;
if the flash memory chip fails to read the target data according to the first reference voltage;
and the flash memory chip sends a reading failure instruction to the main control chip.
With reference to the second possible implementation manner of the first aspect of the embodiment of the present invention, in a third possible implementation manner of the first aspect of the embodiment of the present invention, after the sending, by the flash memory chip, the read failure instruction to the main control chip, the method further includes:
the main control chip acquires the reading failure instruction through the management module and generates the data re-reading instruction according to the reading failure instruction;
the main control chip determines a second reference voltage value from a preset rereading sequence according to the data rereading instruction, wherein the preset rereading sequence further comprises a plurality of reference voltage values;
and the main control chip reads the target data from the flash memory chip according to the second reference voltage value.
With reference to any one implementation manner of the first aspect to the third possible implementation manner of the first aspect of the embodiment of the present invention, in a fourth possible implementation manner of the first aspect of the embodiment of the present invention, before the main control chip obtains the data rereading instruction through the management module, the method further includes:
and the main control chip sends a read request to the back-end module through the management module, wherein the read request is used for indicating the back-end module to read the target data in the flash memory chip.
A second aspect of the present invention provides a data reading apparatus comprising:
the acquisition module is used for acquiring a data re-reading instruction through the management module when data reading fails;
the determining module is used for determining a first reference voltage value from a preset rereading sequence according to the data rereading instruction acquired by the acquiring module, wherein the preset rereading sequence is stored in the rear-end module of the main control chip;
and the reading module is used for reading data from the flash memory chip according to the first reference voltage value determined by the determining module.
In combination with the second aspect of the embodiments of the present invention, in a first possible embodiment of the second aspect, there is provided a data reading apparatus, including:
the sending module is specifically used for sending the first reference voltage value to the flash memory chip according to the main control chip;
a generating module, specifically configured to generate a first reference voltage according to the first reference voltage value;
and the reading module is specifically used for reading the target data according to the first reference voltage.
In combination with the first possible embodiment of the second aspect of the embodiments of the present invention, in a second possible embodiment of the second aspect, there is provided a data reading apparatus, including:
the sending module is further configured to send a reading success instruction to the main control chip after the flash memory chip successfully reads the target data according to the first reference voltage, where the reading success instruction carries the target data;
and the sending module is further used for sending a reading failure instruction to the main control chip after the flash memory chip fails to read the target data according to the first reference voltage.
In combination with the second possible embodiment of the second aspect of the embodiments of the present invention, in a third possible embodiment of the second aspect, there is provided a data reading apparatus, including:
the acquisition module is further used for acquiring the reading failure instruction through the management module and generating the data re-reading instruction according to the reading failure instruction;
the determining module is further configured to determine a second reference voltage value from a preset rereading sequence according to the data rereading instruction, wherein the preset rereading sequence further includes a plurality of reference voltage values;
and the reading module is also used for reading the target data from the flash memory chip according to the second reference voltage value.
With reference to any one implementation manner of the second aspect to the third possible implementation manner of the second aspect of the embodiment of the present invention, the data reading apparatus in the fourth possible implementation manner of the second aspect of the embodiment of the present invention includes:
and the sending module is further configured to send a read request to the back-end module, where the read request is used to instruct the back-end module to read the target data in the flash memory chip.
According to the technical scheme, the embodiment of the invention has the following advantages:
in the embodiment of the invention, a data reading method is provided, when data reading fails, a main control chip obtains a data re-reading instruction through a management module; the main control chip determines a first reference voltage value from a preset rereading sequence according to a data rereading instruction, wherein the preset rereading sequence is stored in a rear-end module of the main control chip; and the main control chip reads the target data from the flash memory chip according to the first reference voltage value. Through the mode, when the situation that the reference voltage value needs to be acquired for multiple times appears in the rear-end module, the rear-end module can acquire the reference voltage value stored in the rear-end module, data communication occupying a large amount of bandwidth between the rear-end module and the management module is avoided, and the data reading efficiency of a user is improved.
Drawings
FIG. 1 is a schematic diagram of an SSD for a data reading method according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of data reading in the application scenario of the present invention;
FIG. 3 is a diagram of an embodiment of a method for reading data according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an embodiment of a data reading apparatus according to the present invention;
fig. 5 is a schematic diagram of another embodiment of a data reading apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that the embodiments described herein may be practiced otherwise than as specifically illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The embodiment of the invention provides a data reading method and a related device, which can reduce the bandwidth occupied by data communication between a management module and a rear-end module and improve the data reading efficiency of a user under the condition that data needs to be re-read.
It should be understood that the present invention is mainly applied to data reading of a Solid State Drive (SSD), wherein a Flash memory type of the SSD is a Nand Flash, for convenience of understanding, please refer to fig. 1, fig. 1 is a schematic diagram of the SSD of the data reading method in the embodiment of the present invention, the embodiment of the present invention is the data reading method applied to the SSD, and the following description is provided with reference to fig. 1.
As shown in fig. 1, the SSD may be divided into two parts, namely a main control chip and a flash memory chip, where the main control chip is configured to run an operation instruction including firmware of the SSD, the main control chip includes a back-end module and a management module, the back-end module is responsible for instructing operations such as reading, writing, and erasing of the flash memory chip, the management module is responsible for managing the flash memory chip, and the flash memory chip is responsible for storing data. The flash memory chip is used for storing target data, wherein the flash memory chip is a Nand-type flash memory, and the Nand-type flash memory can be further divided into single-level cells (SLC), multi-level cells (MLC), and triple-level cells (TLC) according to a difference in density of electronic units, where the type of the Nand-type flash memory is not limited, and the SSD generally includes an array of 8, 16, or 32 Nand-type flash memory chips.
The memory basic unit of the Nand type flash memory chip is a floating gate transistor and consists of an upper control layer, a middle floating gate layer, a polysilicon oxide layer, a tunnel oxide layer and a lower substrate (substrate). When the control voltage is very high, quantum tunneling effect can be generated, electrons start from the substrate, penetrate through the tunnel oxide layer and enter the floating gate to be stored, and then writing operation and charging are completed. Conversely, when a strong negative voltage is applied to the control layer, electrons are quantum tunneled from the floating gate back to the substrate, an operation called erase. When no voltage is applied to the control layer, an electric field, called an intrinsic field, is still generated in the oxide layer, which is generated by electrons in the floating gate. Under the action of the electric field, electrons will slowly leak from the floating gate, and as the number of times of erasing period (Program/erase cycle, P/E cycle) increases, a voltage higher than a threshold voltage is required for correct programming (Program), and meanwhile, the voltage precision during programming becomes worse, and since the threshold voltage has shifted, data can be read by using a normal reading voltage, and errors can occur.
Therefore, an error correction method for data reading using a reference voltage has appeared: Read-Retry. When the target data Read by the flash memory chip is still failed after being processed by Error Correction Code (ECC), the flash memory chip sends a Read failure instruction to the main control chip, the main control chip executes Read-Retry operation after receiving the Read failure instruction, the main control chip sends a preset reference voltage value to the flash memory chip, the flash memory chip generates a corresponding reference voltage according to the received reference voltage value and uses the reference voltage to Read the target data, when the reading fails, the main control chip sends another preset reference voltage value to the flash memory chip, the flash memory chip generates a corresponding reference voltage according to the received reference voltage value and uses the reference voltage to Read the target data, and the reading failure is judged if the reading is still unsuccessful when the reference voltage value is used.
For ease of understanding, the present invention will be described with reference to fig. 1 and fig. 2, please refer to fig. 2, and fig. 2 is a schematic flow chart of data reading in an application scenario of the present invention, and as shown in the figure, specifically:
after the solid state disk receives a data reading instruction sent by a system, a management module on a main control chip generates a reading request according to the data reading instruction and sends the reading request to a back-end module, the reading request sent this time is a normal reading request (normal read), the main control chip reads target data in a flash memory chip through the back-end module, when the flash memory chip is read in failure after being processed by ECC, the main control chip obtains the data re-reading instruction through the management module, and determines a first reference voltage value from a preset re-reading sequence according to the data re-reading instruction, wherein the preset re-reading sequence is stored in the back-end module of the main control chip; and the main control chip reads the target data from the flash memory chip according to the first reference voltage value. When the reading is still failed after the ECC processing, the main control chip obtains a data re-reading instruction through the management module, determines a second reference voltage value from a preset re-reading sequence according to the data re-reading instruction, and reads the target data from the flash memory chip according to the second reference voltage value. And analogizing, until the Nth reading fails, wherein N is an integer larger than 2, the specific numerical value of N depends on a preset rereading sequence stored in a rear-end module of the main control chip, the preset rereading sequence is made by a manufacturer for producing Nand flash memory chips, the preset rereading sequence is a table with N numbers, generally 8, 10 or 12 numbers, and a reading failure instruction is output. And when the reading is successful after the ECC processing, outputting a reading success instruction and outputting the read target data.
Referring to fig. 3, a schematic diagram of an embodiment of a data reading method according to the present invention includes:
101. the main control chip acquires a data re-reading instruction through the management module;
in this embodiment, when the flash memory chip fails to Read data, the flash memory chip sends a Read failure instruction to a back-end module running in the SSD main control chip, the back-end module in the main control chip forwards the instruction to a management module in the main control chip, the management module generates a data reread instruction according to the instruction, and the data reread instruction is used to instruct the SSD to perform Read-Retry operation.
102. The main control chip determines a first reference voltage value from a preset rereading sequence according to a data rereading instruction;
in this embodiment, the main control chip determines a first reference voltage value from a preset rereading sequence according to a data rereading instruction generated by the management module, the preset rereading sequence is stored in the back-end module, a plurality of reference voltage values also exist in the preset rereading sequence, and the format of the reference voltage values is hexadecimal data.
103. And the main control chip reads the target data from the flash memory chip according to the first reference voltage value.
In this embodiment, the back-end module in the main control chip reads the target data from the flash memory chip according to the determined first reference voltage value.
The embodiment of the invention provides a data reading method, which comprises the steps that firstly, a main control chip obtains a data re-reading instruction through a management module, then, the main control chip determines a first reference voltage value from a preset re-reading sequence according to the data re-reading instruction, and finally, the main control chip reads target data from a flash memory chip according to the first reference voltage value. By the mode, when the rear-end module needs to acquire the reference voltage value, the rear-end module can acquire the reference voltage value stored in the rear-end module, data communication occupying a large amount of bandwidth between the rear-end module and the management module is avoided, and the reading efficiency of a user on data is improved.
Optionally, on the basis of the embodiment corresponding to fig. 3, in an embodiment of the second data reading method provided in the embodiment of the present invention, the reading, by the main control chip, the target data from the flash memory chip according to the first reference voltage value includes:
the main control chip sends the first reference voltage value to the flash memory chip;
the flash memory chip generates a first reference voltage according to the first reference voltage value;
the flash memory chip reads the target data according to the first reference voltage.
In this embodiment, a back-end module in a main control chip on the SSD sends the first reference voltage value to the flash memory chip, the flash memory chip generates a first reference voltage usable by the flash memory chip according to the received first reference voltage value, and the flash memory chip reads the target data according to the first reference voltage.
In the embodiment of the invention, after the back-end module in the main control chip determines the first reference voltage value from the locally stored preset rereading sequence, the first reference voltage value is sent to the flash memory chip, the flash memory chip generates the first reference voltage which can be used for reading data according to the received first reference voltage value, and reads the target data according to the generated first reference voltage. So as to facilitate the expansion of the subsequent steps and improve the feasibility of the scheme.
Optionally, on the basis of the embodiment corresponding to fig. 3, in a third embodiment of the method for reading data according to the embodiment of the present invention, after the flash chip reads the target data according to the first reference voltage, the method further includes:
if the flash memory chip successfully reads the target data according to the first reference voltage;
the flash memory chip sends a reading success instruction to the main control chip, and the reading success instruction carries target data;
if the flash memory chip fails to read the target data according to the first reference voltage;
and the flash memory chip sends a reading failure instruction to the main control chip.
In the embodiment, when the flash memory chip successfully reads the target according to the first reference voltage, the flash memory chip sends a reading success command to the main control chip, and the reading success command carries target data; when the flash memory chip reads the target data according to the first reference voltage and still fails through ECC processing, the flash memory chip sends a reading failure instruction to the main control chip so as to instruct the main control chip to execute Read-Retry operation.
In the embodiment of the invention, the execution method of the flash memory chip is provided after the flash memory chip reads the target data by using the first reference voltage, when reading fails, the flash memory chip avoids ending reading after reading fails once by using the reference voltage through the reading failure instruction sent to the main control chip, and the reading success rate is improved.
Optionally, on the basis of the embodiment corresponding to fig. 2, in a fourth embodiment of the method for reading data according to the embodiment of the present invention, after the flash memory chip sends the read failure instruction to the main control chip, the method further includes:
the main control chip acquires a reading failure instruction through the management module and generates a data rereading instruction according to the reading failure instruction;
the main control chip determines a second reference voltage value from a preset rereading sequence according to the data rereading instruction, wherein the preset rereading sequence also comprises a plurality of reference voltage values;
and the main control chip reads the target data from the flash memory chip according to the second reference voltage value.
In this embodiment, the main control chip obtains the read failure instruction through the management module, and generates the data re-reading instruction according to the read failure instruction, and the main control chip determines a second reference voltage value from the preset re-reading sequence according to the data re-reading instruction, where the preset re-reading sequence further includes a plurality of reference voltage values, and the main control chip reads the target data from the flash memory chip according to the second reference voltage value.
The embodiment of the invention provides the steps executed by the main control chip end after the reading using the first reference voltage fails, thereby improving the feasibility of the scheme.
Optionally, on the basis of any one of the first to fourth embodiments corresponding to fig. 2, in a fifth optional embodiment of the method for reading data according to the embodiment of the present invention, before the main control chip obtains the data rereading instruction through the management module, the method further includes:
the main control chip sends a read request to the back-end module through the management module, and the read request is used for indicating the back-end module to read the target data in the flash memory chip.
In this embodiment, the main control chip receives a data reading request sent by an external system through the management module, and the main control chip sends the reading request to the back-end module through the management module, where the reading request is used to instruct the back-end module to read target data in the flash memory.
In the embodiment of the invention, the source of the data reading request and the processing mode of the reading request in the main control chip are provided, and the feasibility of the scheme is improved.
Referring to fig. 4, fig. 4 is a schematic view of an embodiment of a data reading apparatus according to the present invention, and in a first embodiment of the data reading apparatus 20 according to the present invention, the data reading apparatus 20 includes:
an obtaining module 201, configured to obtain a data re-reading instruction through a management module when data reading fails;
a determining module 202, configured to determine a first reference voltage value from a preset rereading sequence according to the data rereading instruction acquired by the acquiring module, where the preset rereading sequence is stored in a back-end module of the main control chip;
and a reading module 203 for reading data from the flash memory chip according to the first reference voltage value determined by the determining module.
In this embodiment, the obtaining module 201 is configured to obtain a data re-reading instruction through the management module when data reading fails; a determining module 202, configured to determine a first reference voltage value from a preset rereading sequence according to the data rereading instruction acquired by the acquiring module, where the preset rereading sequence is stored in a back-end module of the main control chip; and a reading module 203 for reading data from the flash memory chip according to the first reference voltage value determined by the determining module.
The embodiment of the invention provides a data reading device, which comprises a main control chip, a data re-reading instruction, a first reference voltage value and a second reference voltage value, wherein the main control chip obtains the data re-reading instruction through a management module, then the main control chip determines the first reference voltage value from a preset re-reading sequence according to the data re-reading instruction, and finally the main control chip reads target data from a flash memory chip according to the first reference voltage value. By the mode, when the rear-end module needs to acquire the reference voltage value, the rear-end module can acquire the reference voltage value stored in the rear-end module, data communication occupying a large amount of bandwidth between the rear-end module and the management module is avoided, and the reading efficiency of a user on data is improved.
Optionally, on the basis of the embodiment corresponding to fig. 4, please refer to fig. 5, in a second embodiment of the data reading apparatus 20 provided in the embodiment of the present invention, the data reading apparatus 20 further includes a sending module 204 and a generating module 205;
the sending module 204 is specifically configured to send the first reference voltage value to the flash memory chip according to the main control chip;
a generating module 205, specifically configured to generate a first reference voltage according to the first reference voltage value;
the reading module 203 is specifically configured to read the target data according to the first reference voltage.
In the embodiment of the invention, after the back-end module in the main control chip determines the first reference voltage value from the locally stored preset rereading sequence, the first reference voltage value is sent to the flash memory chip, the flash memory chip generates the first reference voltage which can be used for reading data according to the received first reference voltage value, and reads the target data according to the generated first reference voltage. So as to facilitate the expansion of the subsequent steps and improve the feasibility of the scheme.
Alternatively, on the basis of the embodiment corresponding to fig. 5, in a third embodiment of the data reading apparatus 20 provided by the embodiment of the present invention,
the sending module 204 is further configured to send a successful reading instruction to the main control chip after the flash memory chip successfully reads the target data according to the first reference voltage, where the successful reading instruction carries the target data;
the sending module 204 is further configured to send a read failure instruction to the main control chip after the flash memory chip fails to read the target data according to the first reference voltage.
In the embodiment of the invention, the execution method of the flash memory chip is provided after the flash memory chip reads the target data by using the first reference voltage, when reading fails, the flash memory chip avoids ending reading after reading fails once by using the reference voltage through the reading failure instruction sent to the main control chip, and the reading success rate is improved.
Alternatively, on the basis of the third embodiment of the data reading device 20 provided by the above-mentioned embodiment of the present invention, in the fourth embodiment of the data reading device 20 provided by the embodiment of the present invention,
the obtaining module 201 is further configured to obtain a reading failure instruction through the management module, and generate a data rereading instruction according to the reading failure instruction;
the determining module 202 is further configured to determine a second reference voltage value from a preset rereading sequence according to the data rereading instruction, where the preset rereading sequence further includes a plurality of reference voltage values;
the reading module 203 is further configured to read target data from the flash memory chip according to the second reference voltage value.
The embodiment of the invention provides the steps executed by the main control chip end after the reading using the first reference voltage fails, thereby improving the feasibility of the scheme.
Alternatively, on the basis of any one of the first to fourth embodiments of the data reading device 20 corresponding to fig. 4 to 5, in a fifth embodiment of the data reading device 20 provided by the embodiment of the present invention,
the sending module 204 is further configured to send a read request to the back-end module, where the read request is used to instruct the back-end module to read the target data in the flash memory chip.
In the embodiment of the invention, the source of the data reading request and the processing mode of the reading request in the main control chip are provided, and the feasibility of the scheme is improved.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the embodiments provided in the present invention, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, a division of a unit is merely a logical division, and an actual implementation may have another division, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a read-only memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (8)
1. A method of data reading, comprising:
when the data reading fails, the main control chip acquires a data re-reading instruction through the management module;
the main control chip determines a first reference voltage value from a preset rereading sequence according to the data rereading instruction, wherein the preset rereading sequence is stored in a rear-end module of the main control chip;
the main control chip reads target data from the flash memory chip according to the first reference voltage value;
the main control chip reads the target data from the flash memory chip according to the first reference voltage value, and the method comprises the following steps
The main control chip sends the first reference voltage value to the flash memory chip;
the flash memory chip generates a first reference voltage according to the first reference voltage value;
and the flash memory chip reads the target data according to the first reference voltage.
2. The method of claim 1, wherein after the flash memory chip reads the target data according to the first reference voltage, the method further comprises:
if the flash memory chip successfully reads the target data according to the first reference voltage;
the flash memory chip sends a reading success instruction to the main control chip, wherein the reading success instruction carries the target data;
if the flash memory chip fails to read the target data according to the first reference voltage;
and the flash memory chip sends a reading failure instruction to the main control chip.
3. The method of claim 2, wherein after the flash memory chip sends the read failure instruction to the master chip, the method further comprises:
the main control chip acquires the reading failure instruction through the management module and generates the data re-reading instruction according to the reading failure instruction;
the main control chip determines a second reference voltage value from a preset rereading sequence according to the data rereading instruction, wherein the preset rereading sequence further comprises a plurality of reference voltage values;
and the main control chip reads the target data from the flash memory chip according to the second reference voltage value.
4. The method according to any one of claims 1 to 3, wherein before the main control chip obtains the data re-reading instruction through the management module, the method further comprises:
and the main control chip sends a read request to the back-end module through the management module, wherein the read request is used for indicating the back-end module to read the target data in the flash memory chip.
5. A data reading apparatus, comprising:
the acquisition module is used for acquiring a data re-reading instruction through the management module when data reading fails;
the determining module is used for determining a first reference voltage value from a preset rereading sequence according to the data rereading instruction acquired by the acquiring module, wherein the preset rereading sequence is stored in a rear-end module of the main control chip;
the reading module is used for reading target data from the flash memory chip according to the first reference voltage value determined by the determining module;
the sending module is specifically used for sending the first reference voltage value to the flash memory chip according to the main control chip;
a generating module, specifically configured to generate a first reference voltage according to the first reference voltage value;
and the reading module is specifically used for reading the target data according to the first reference voltage.
6. The data reading apparatus according to claim 5,
the sending module is further configured to send a reading success instruction to the main control chip after the flash memory chip successfully reads the target data according to the first reference voltage, where the reading success instruction carries the target data;
and the sending module is further used for sending a reading failure instruction to the main control chip after the flash memory chip fails to read the target data according to the first reference voltage.
7. The data reading apparatus according to claim 6,
the acquisition module is further used for acquiring the reading failure instruction through the management module and generating the data re-reading instruction according to the reading failure instruction;
the determining module is further configured to determine a second reference voltage value from a preset rereading sequence according to the data rereading instruction, wherein the preset rereading sequence further includes a plurality of reference voltage values;
and the reading module is also used for reading the target data from the flash memory chip according to the second reference voltage value.
8. Data reading apparatus according to any one of claims 5 to 7,
and the sending module is further configured to send a read request to the back-end module, where the read request is used to instruct the back-end module to read the target data in the flash memory chip.
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