CN109056063A - The preparation method of polycrystalline silicon used for solar battery piece - Google Patents
The preparation method of polycrystalline silicon used for solar battery piece Download PDFInfo
- Publication number
- CN109056063A CN109056063A CN201810991756.5A CN201810991756A CN109056063A CN 109056063 A CN109056063 A CN 109056063A CN 201810991756 A CN201810991756 A CN 201810991756A CN 109056063 A CN109056063 A CN 109056063A
- Authority
- CN
- China
- Prior art keywords
- electromagnetic confinement
- smelting device
- silicon ingot
- smelting
- polycrystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/08—Production of homogeneous polycrystalline material with defined structure from liquids by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of preparation methods of polycrystalline silicon used for solar battery piece.The preparation method passes through metallurgy method melting silicon alloy melt first during carrying out polycrystal silicon ingot preparation and purification, and grows silicon from silicon alloy melt by cooling, completes the first time purification of polycrystal silicon ingot；Symmetrical even number electromagnetic confinement smelting device is set around the polycrystal silicon ingot lifted out, during polysilicon solidification, impurity in polysilicon will be segregated, impurity is discharged in not solidified melt by the part of solidification, realize the purification of solidification material, because being provided with multiple electromagnetic confinement smelting devices, each electromagnetic confinement smelting device can generate corresponding zone refining molten bath, zone refining molten bath respectively purifies polycrystal silicon ingot, thus, further improve the purity of the polycrystal silicon ingot of preparation, so that the purity of the polysilicon chip of preparation is higher, and then improve the photoelectric conversion efficiency of solar battery.
Description
Technical field
The present invention relates to solar energy battery adopted silicon chip preparation method technical field, more particularly to one kind are used for solar batteries more
The preparation method of crystal silicon chip.
Background technique
Solar energy has many advantages, such as cleanliness without any pollution as renewable energy, inexhaustible, is to solve to work as
The ideal chose of preceding energy crisis.Silica-based solar mainly converts light energy into solar energy using photovoltaic effect, due to silicon
It is the most abundant element of content in the earth's crust, therefore silica-based solar is the following most economical and most promising energy.Metallurgy method mentions
Pure silicon polycrystal has the characteristics of at low cost, simple process, pollution is few, small investment relative to improved Siemens, is current optimal
Polysilicon purification method.Metallurgy method is mainly the method purified metals using the effect of segregation of impurity element, theoretically smelting
The limit purity of golden method purifying polycrystalline silicon is 7N, and the major impurity of purification is the elements such as metallic element, boron and phosphorus, and alloy orientation is solidifying
Gu method of purification is one kind of metallurgy method, alloy system common so far has: aluminium-silicon, silicon-iron, copper-silicon, silicon-tin etc..But
Be in the prior art metallurgy method purifying polycrystalline silicon the shortcomings that be: purity is lower, in turn results in the purity of the polysilicon chip of preparation
It is lower, affect the photoelectric conversion efficiency of the solar battery of production.
Summary of the invention
The technical problem to be solved by the present invention is to how provide a kind of polycrystalline used for solar batteries that can be improved preparation
The preparation method of the purity of silicon wafer.
In order to solve the above technical problems, the technical solution used in the present invention is: a kind of polycrystalline silicon used for solar battery piece
Preparation method, it is characterised in that include the following steps:
By polycrystal silicon ingot preparation and purifying plant preparation and purifying polycrystalline silicon ingot, the polycrystal silicon ingot is taken out and is passed by first
It send device to send polycrystal silicon ingot cutter device to be handled；
Polycrystal silicon ingot cutter device cuts the polycrystal silicon ingot, is cut into thickness and meets the polysilicon chip needed, then
The polysilicon chip is sent to silicon wafer cutting means by second conveyer to handle；
Silicon wafer cutting means carry out the polysilicon chip to cut processing, make the shape meet demand of the polysilicon chip after cutting,
Then the polysilicon chip after cutting is sent to polysilicon fluff making device by third transmission device and carries out making herbs into wool processing, made described
The surface of polysilicon chip forms flannelette；
It is obtained after carrying out cleaning and drying and processing respectively using cleaning equipment and drying equipment to the polysilicon chip after formation flannelette
To polycrystalline silicon used for solar battery piece.
A further technical solution lies in pass through polycrystal silicon ingot preparation and purifying plant preparation and the side of purifying polycrystalline silicon ingot
Method is as follows:
Silico-aluminum, silicon copper or Antaciron are prepared, and the silico-aluminum, silicon copper or Antaciron are placed in
In the crucible of furnace body, the crucible is located in crucible supporting, and the bottom of crucible supporting is provided with crucible pole, under the crucible pole
End is located at outside furnace body, drives the crucible rotation by the crucible pole rotation drive device controlled outside the furnace body；Crucible supporting
Outside having heaters is set, then by heater, heating melting silicon alloy is carried out to the silicon alloy in crucible, until fusing
Uniformly；
Seed rod is provided at the top of the furnace body, one end of the seed rod is located in furnace body, and it is intracorporal that seed rod is located at furnace
One end is provided with seed crystal, and the other end of seed rod is located at outside furnace body, and seed rod lifting is provided on the seed rod outside furnace body
And rotation drive device, the melt of seed crystal to the crucible is fallen using seed rod lifting and rotation drive device driving seed rod
It is interior, the power of heater is reduced, until silicon is grown from silicon alloy melt, polycrystal silicon ingot is formed, then lifts seed rod；
Even number electromagnetic confinement smelting device is provided with above the crucible, the electromagnetic confinement smelting device is molten for generating region
Molten bath is refined, carries out electromagnetic confinement, the electromagnetism while carrying out fusing heating to polycrystal silicon ingot by zone refining molten bath
Constraint smelting device is arranged from top to bottom, and the adjacent smelting device or so is arranged in a staggered manner, a upper electromagnetic confinement melting
The height of device is higher than the height of the electromagnetic confinement smelting device of adjacent downside, and respectively electromagnetic confinement smelting device a, electromagnetic confinement are molten
Refine device b, electromagnetic confinement smelting device c, electromagnetic confinement smelting device d, and so on to the last upside even number electromagnetic confinement
Smelting device, the seed rod are located in the lateral direction between electromagnetic confinement smelting device；When the shoulder of the polycrystal silicon ingot of lifting is super
When crossing the top of electromagnetic confinement smelting device b, while starting electromagnetic confinement smelting device a and electromagnetic confinement smelting device b, in polycrystal silicon ingot
During lifting, electromagnetic confinement smelting device a and electromagnetic confinement melting are controlled by the position sensor of electromagnetic confinement smelting device
Device b is at a distance from polycrystal silicon ingot；The depth of zone refining molten bath a produced by electromagnetic confinement smelting device a is controlled by caliper detector a
Degree；The depth of zone refining molten bath b produced by electromagnetic confinement smelting device b is controlled by caliper detector b；
As the progress that polycrystal silicon ingot lifts is opened simultaneously when the shoulder of polycrystal silicon ingot is more than the top of electromagnetic confinement smelting device d
Dynamic electromagnetic confinement smelting device d and electromagnetic confinement smelting device c, it is molten by corresponding electromagnetic confinement during polycrystal silicon ingot lifting
The position sensor of device is refined to control electromagnetic confinement smelting device d and electromagnetic confinement smelting device c at a distance from polycrystal silicon ingot；Pass through thickness
Spend the depth of zone refining molten bath d produced by detector d control electromagnetic confinement smelting device d；Electromagnetism is controlled by caliper detector b
Constrain the depth of zone refining molten bath c produced by smelting device c；
And so on, with the progress that polycrystal silicon ingot lifts, when the shoulder of polycrystal silicon ingot is more than the electromagnetic confinement melting of top side
When the top of device, while starting two electromagnetic confinement smelting devices of top side, during polycrystal silicon ingot lifting, by corresponding
The position sensor of electromagnetic confinement smelting device controls two electromagnetic confinement smelting devices of top side at a distance from polycrystal silicon ingot；And
Two electromagnetic confinements by two electromagnetic confinement smelting devices corresponding caliper detector control top side with top side are molten
Refine zone refining pool depth caused by device；
With the progress of lifting, the zone refining molten bath that electromagnetic confinement smelting device from bottom to top generates is successively to lifting
Polycrystal silicon ingot out carries out zone-refine；
Finally after lifting, the polycrystal silicon ingot tail portion for not completing multiple zone-refine is cut away, is melted down, and it is remaining most upper
The polycrystal silicon ingot of the electromagnetic confinement smelting device above section of side is the polycrystal silicon ingot after purification.
A further technical solution lies in: there are four the electromagnetic confinement smelting device settings, is from top to bottom electromagnetic confinement
Smelting device a, electromagnetic confinement smelting device b, electromagnetic confinement smelting device c and electromagnetic confinement smelting device d, wherein the electromagnetic confinement melting
Device a and electromagnetic confinement smelting device c is located at left side, and electromagnetic confinement smelting device b and electromagnetic confinement smelting device d are located at right side, and electromagnetism is about
Beam smelting device a, electromagnetic confinement smelting device b, electromagnetic confinement smelting device c and electromagnetic confinement smelting device d, for area on polycrystal silicon ingot
Melt in the melting molten bath of domain generates symmetrical electromagnetic confinement power, keeps polycrystal silicon ingot stress balance, and can move up and down and
Side-to-side movement.
A further technical solution lies in: a position sensing is provided on the downside of each electromagnetic confinement smelting device
Device, the position sensor are used to incude the diameter of the polycrystal silicon ingot, the position of electromagnetic confinement device are adjusted according to diameter change
It sets.
A further technical solution lies in: the electromagnetic confinement smelting device includes zone refining coil, coil insulating supporting
And electromagnetic confinement smelting device moving lever, the zone refining coil are supported by the coil insulating supporting and are carried out absolutely
Edge isolation, the moving lever is horizontally disposed, and one end of the moving lever is located in the furnace body, the other end of the moving lever
Outside the furnace body, one end positioned at the intracorporal moving lever of the furnace is fixedly connected with the coil insulating supporting.
A further technical solution lies in: the coil insulating supporting is generally provided with up and down direction on its side wall
The tubular structure of the opening of extension, the central angle of the cross section of the insulating supportingGreater than 180 ° and less than 225 °.
The beneficial effects of adopting the technical scheme are that the preparation method carry out polycrystal silicon ingot preparation and
Pass through metallurgy method melting silicon alloy melt when purification first, and grow silicon from silicon alloy melt by cooling, completes polycrystalline
The first time of silicon ingot purifies；Symmetrical even number electromagnetic confinement smelting device is set around the polycrystal silicon ingot lifted out, by described
The zone refining molten bath that electromagnetic confinement smelting device generates carries out fusing heating to polycrystal silicon ingot, melts in zone refining molten bath more
Crystal silicon solidifies after leaving zone refining molten bath with the lifting of polycrystal silicon ingot, during polysilicon solidification, in polysilicon
Impurity will be segregated, and impurity is discharged in not solidified melt by the part of solidification, the purification of solidification material be realized, because setting
Multiple electromagnetic confinement smelting devices are equipped with, each electromagnetic confinement smelting device can generate corresponding zone refining molten bath, zone refining
Molten bath respectively purifies polycrystal silicon ingot, thus, the purity of the polycrystal silicon ingot of preparation is further improved, so that system
The purity of standby polysilicon chip is higher, and then improves the photoelectric conversion efficiency of solar battery.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the functional block diagram of system described in the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of polycrystal silicon ingot preparation and purifying plant in system described in the embodiment of the present invention；
Fig. 3 is zone refining coil and coil insulating supporting in the preparation of polycrystal silicon ingot described in the embodiment of the present invention and purifying plant
Partial structural schematic diagram；
Wherein: 1: seed rod；2: seed crystal；3: polycrystal silicon ingot；4: zone refining molten bath d；5: zone refining molten bath c；6: region is molten
Refine molten bath b；7: zone refining molten bath a；8: electromagnetic confinement smelting device d；8-1: zone refining coil；8-2: electromagnetic confinement smelting device
Moving lever；8-3: position sensor；9: caliper detector d；10: electromagnetic confinement smelting device c；11: caliper detector c；12: electromagnetism
Constraint smelting device b:13: caliper detector b；14: electromagnetic confinement smelting device a；15: caliper detector a；16: heater；17: earthenware
Crucible support；18: crucible；19: silicon alloy melt；20: crucible pole；21: furnace body；22: polycrystal silicon ingot preparation and purifying plant；23:
Silicon ingot cutter device；24: silicon wafer cutting means；25: polysilicon fluff making device；26: second conveyer；27: the second transmission dresses
It sets；28: third transmission device；29: cleaning equipment；30: drying equipment；31: the four transmission devices；32: the five transmission devices.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
As shown in Figure 1, the embodiment of the invention discloses a kind of preparation system of polycrystalline silicon used for solar battery piece, including it is more
Crystal silicon ingot preparation and purifying plant 22, silicon ingot cutter device 23, silicon wafer cutting means 24, polysilicon fluff making device 25, cleaning set
Standby 29 and drying equipment 30.The polycrystal silicon ingot prepares and purifying plant 22 is used to prepare and purifying solar energy battery polycrystalline
Silicon ingot, is provided with second conveyer 26 between the purifying plant and the cutter device, the second conveyer 26 is used
It is transferred to the cutter device in the polycrystal silicon ingot for preparing the purifying plant, the cutter device is used for the polysilicon
Ingot is cut, and the satisfactory polysilicon chip of thickness is prepared；It is provided between the cutter device and the cutting means
Second conveyer 27, the second conveyer 27 are used to for the polysilicon chip after cutter device cutting being sent to described
Silicon wafer cutting means are cut, and the cutting means process the shape of needs for carrying out cutting processing to the silicon wafer；
Third transmission device 28 is provided between the cutting means and the polysilicon fluff making device, the third transmission device 28 is used
Polysilicon chip after cutting the cutting means is sent to the polysilicon fluff making device, and the polysilicon fluff making device is used
In carrying out polycrystalline making herbs into wool processing using hydrofluoric acid and nitric acid to the polysilicon chip after cutting, form the surface of the polysilicon chip
Flannelette；The cleaning equipment 29 removes the impurity on polysilicon chip surface for starting the cleaning processing to the polysilicon chip after making herbs into wool
And acid solution；The drying equipment 30 removes its surface residual for starting the cleaning processing to the polysilicon chip after cleaning
Water.
It should be noted that silicon ingot cutter device 23, silicon wafer cutting means 24, polysilicon fluff making device in the system
25, cleaning equipment 29, drying equipment 30 and second conveyer to the 5th transmission device are device in the prior art, tool
This will not be repeated here for body structure.
Further, described as shown in Fig. 2, the multilevel region purifying solar energy level polysilicon device includes furnace body 21
The bottom of furnace body 21 is provided with crucible pole 20, and one end of the crucible pole 20 is located at the outside of the furnace body 21, the crucible pole
20 other end is located in the furnace body 21, and crucible supporting 17 is fixed on one end that the crucible pole 20 is located in furnace body 21；
Crucible 18 is located in the crucible supporting 17, and the periphery of the crucible supporting 17 is arranged having heaters 16, the crucible 18 it is upper
Side is provided with even number electromagnetic confinement smelting device, and the electromagnetic confinement smelting device is used for generating region melting molten bath, passes through region
Melting molten bath carries out electromagnetic confinement while carrying out fusing heating to polycrystal silicon ingot；The electromagnetic confinement smelting device is set from top to bottom
Set, and the adjacent smelting device or so is arranged in a staggered manner, the height of a upper electromagnetic confinement smelting device be higher than it is adjacent under
The height of the electromagnetic confinement smelting device of side, melting molten bath caused by electromagnetic confinement device is with the lifting campaign of polycrystal silicon ingot to more
Crystal silicon ingot is purified, and the top of the furnace body 21 is provided with seed rod 1, and the upper end of the seed rod 1 is located at the furnace body 21
The lower end in outside, the seed rod 1 is located in the furnace body 21, is fixed on one end of the seed rod in the furnace body 21
Seed crystal 2, and the seed rod 1 is located at 21 lateral ends of furnace body in the lateral direction between electromagnetic confinement smelting device
Seed rod lifting and rotating device are provided on seed rod 1, for driving the 1 oscilaltion campaign of seed rod；Positioned at described
One end of the crucible pole 20 outside furnace body 21 is provided with crucible pole rotation drive device, for by driving the crucible pole 20
Rotation drives the crucible rotation.
Electromagnetic confinement smelting device can be set to 4,6,8 or 10 etc..When the electromagnetic confinement smelting device
It is from top to bottom electromagnetic confinement smelting device a, electromagnetic confinement smelting device b, electromagnetic confinement smelting device c and electromagnetism when being set as four
Constrain smelting device d.Wherein the electromagnetic confinement smelting device a and electromagnetic confinement smelting device c is located at left side, electromagnetic confinement smelting device b
It is located at right side, electromagnetic confinement smelting device a, electromagnetic confinement smelting device b, electromagnetic confinement smelting device c and electricity with electromagnetic confinement smelting device d
Magnetic confinement smelting device d is kept more for generating symmetrical electromagnetic confinement power to the melt on polycrystal silicon ingot in zone refining molten bath
Crystal silicon ingot stress balance, and can move up and down and side-to-side movement.And electromagnetic confinement smelting device a, electromagnetic confinement smelting device b, electricity
Magnetic confinement smelting device c, electromagnetic confinement smelting device d not only zone melting polycrystal silicon ingot 3, at the same it is molten to zone refining molten bath a, region
It refines the interior polysilicon melted of molten bath b, zone refining molten bath c, zone refining molten bath d and generates restraining force, the polycrystalline after preventing fusing
Silicon melt flows back into crucible 18.
Further, as shown in Fig. 2, being provided with a position sensor 8- on the downside of each electromagnetic confinement smelting device
3, the position sensor 8-3 are used to incude the diameter of the polycrystal silicon ingot 3, and electromagnetic confinement device is adjusted according to diameter change
Position.
Further, as shown in Fig. 2, the position opposite with each electromagnetic confinement smelting device is provided with a thickness spy
Survey device, the thickness transducer is used to control the size in the zone refining molten bath that the electromagnetic confinement smelting device is formed, from it is lower to
Upper is respectively caliper detector a corresponding with electromagnetic confinement smelting device a, thickness corresponding with electromagnetic confinement smelting device b spy
Device b, caliper detector c corresponding with electromagnetic confinement smelting device c and thickness corresponding with electromagnetic confinement smelting device d is surveyed to visit
Survey device d.
Further, as shown in Figures 2 and 3, the electromagnetic confinement smelting device includes zone refining coil 8-1, coil insulation
8-4 and electromagnetic confinement smelting device moving lever 8-2, the zone refining coil 8-1 is supported to pass through the coil insulating supporting 8-4
It being supported and is dielectrically separated from, the moving lever is horizontally disposed, and one end of the moving lever is located in the furnace body 21,
The other end of the moving lever is located at outside the furnace body 21, one end of the moving lever in the furnace body 21 and the line
Circle insulating supporting 8-4 is fixedly connected.It may be implemented the support to the coil by the coil insulating supporting 8-4, and can be with
Prevent the electric discharge between coil.As shown in figure 3, the coil insulating supporting 8-4's is generally provided on its side wall up and down
The tubular structure for the opening that direction extends, the central angle of the cross section of the insulating supportingIt, can greater than 180 ° and less than 225 °
It prevents the area in the zone refining molten bath excessive, polycrystal silicon ingot is caused to be broken.
The embodiment of the invention also discloses a kind of preparation methods used for solar batteries to crystal silicon chip, include the following steps:
By polycrystal silicon ingot preparation and the preparation of purifying plant 22 and purifying polycrystalline silicon ingot, the polycrystal silicon ingot is taken out and passes through first
Transmission device 26 sends polycrystal silicon ingot cutter device 23 to and is handled；
Polycrystal silicon ingot cutter device 23 cuts the polycrystal silicon ingot, is cut into thickness and meets the polysilicon chip needed, so
The polysilicon chip is sent to silicon wafer cutting means 24 by second conveyer 27 afterwards to handle；
Silicon wafer cutting means 24 carry out the polysilicon chip to cut processing, and the shape of the polysilicon chip after cutting is made to meet need
It asks, then the polysilicon chip after cutting is sent to polysilicon fluff making device 26 by third transmission device 28 and carried out at making herbs into wool
Reason makes the surface of the polysilicon chip form flannelette；
The 4th transmission device 31 is passed through by the polysilicon chip after making herbs into wool using cleaning equipment 29(to the polysilicon chip after formation flannelette
Be transmitted to cleaning equipment 29) and drying equipment 30(the polysilicon chip after cleaning is transmitted to by baking by the 5th transmission device 32
Dry equipment 30) it carries out cleaning respectively and obtains polycrystalline silicon used for solar battery piece after drying and processing.
Further, described that the method for simultaneously purifying polycrystalline silicon ingot is prepared such as by polycrystal silicon ingot preparation and purifying plant 22
Under:
Silico-aluminum, silicon copper or Antaciron are prepared, and the silico-aluminum, silicon copper or Antaciron are placed in
In the crucible 18 of furnace body, the crucible 18 is located in crucible supporting 17, and the bottom of crucible supporting 17 is provided with crucible pole 20, described
The lower end of crucible pole 20 is located at outside furnace body 21, drives the earthenware by the crucible pole rotation drive device controlled outside the furnace body 21
Crucible 18 rotates；Having heaters 16 is arranged in the outside of crucible supporting 17, then by heater 16, to the silicon alloy in crucible 18 into
Row heating melting silicon alloy, until fusing is uniform；
The top of the furnace body 21 is provided with seed rod 1, and one end of the seed rod 1 is located in furnace body, and seed rod 1 is located at furnace body
Interior one end is provided with seed crystal 1, and the other end of seed rod 1 is located at outside furnace body 21, is provided on the seed rod 1 outside furnace body 21
Seed rod lifting and rotation drive device fall seed crystal 2 to institute using seed rod lifting and rotation drive device driving seed rod 1
In the melt for stating crucible 18, the power of heater 16 is reduced, until silicon is grown from silicon alloy melt 19, forms polycrystal silicon ingot 3,
Then seed rod 1 is lifted；
The top of the crucible 18 is provided with even number electromagnetic confinement smelting device, and the electromagnetic confinement smelting device is used for generating region
Melting molten bath carries out electromagnetic confinement, the electricity while carrying out fusing heating to polycrystal silicon ingot by zone refining molten bath
Magnetic confinement smelting device is arranged from top to bottom, and the adjacent smelting device or so is arranged in a staggered manner, and a upper electromagnetic confinement is molten
The height of refining device is higher than the height of the electromagnetic confinement smelting device of adjacent downside, respectively electromagnetic confinement smelting device a, electromagnetic confinement
Smelting device b, electromagnetic confinement smelting device c, electromagnetic confinement smelting device d, and so on to the last upside even number electromagnetism about
Beam smelting device, the seed rod are located in the lateral direction between electromagnetic confinement smelting device；When the shoulder of the polycrystal silicon ingot 3 of lifting
When top more than electromagnetic confinement smelting device b, while starting electromagnetic confinement smelting device a and electromagnetic confinement smelting device b, in polysilicon
During ingot 3 lifts, electromagnetic confinement smelting device a and electromagnetism are controlled by the position sensor 8-3 of electromagnetic confinement smelting device about
Beam smelting device b is at a distance from polycrystal silicon ingot 3；It is molten that zone refining produced by electromagnetic confinement smelting device a is controlled by caliper detector a
The depth of pond a；The depth of zone refining molten bath b produced by electromagnetic confinement smelting device b is controlled by caliper detector b；
With the progress that polycrystal silicon ingot 3 lifts, when the shoulder of polycrystal silicon ingot 3 is more than the top of electromagnetic confinement smelting device d, simultaneously
Start electromagnetic confinement smelting device d and electromagnetic confinement smelting device c, during polycrystal silicon ingot lifting, passes through corresponding electromagnetic confinement
The position sensor 8-3 of smelting device controls electromagnetic confinement smelting device d and electromagnetic confinement smelting device c at a distance from polycrystal silicon ingot 3；
Zone refining molten bath d depth produced by electromagnetic confinement smelting device d is controlled by caliper detector d；It is controlled by caliper detector b
Zone refining molten bath c depth produced by electromagnetic confinement smelting device c；
And so on, with the progress that polycrystal silicon ingot 3 lifts, when the electromagnetic confinement that the shoulder of polycrystal silicon ingot 3 is more than top side is molten
When refining the top of device, while starting two electromagnetic confinement smelting devices of top side, during polycrystal silicon ingot 3 lifts, passes through phase
The position sensor 8-3 for the electromagnetic confinement smelting device answered control top side two electromagnetic confinement smelting devices and polycrystal silicon ingot 3
Distance；And pass through two electricity of two electromagnetic confinement smelting devices corresponding caliper detector control top side with top side
Zone refining molten bath caused by magnetic confinement smelting device；
With the progress of lifting, the zone refining molten bath that electromagnetic confinement smelting device from bottom to top generates is successively to lifting
Polycrystal silicon ingot 3 out carries out zone-refine；
Finally after lifting, 3 tail portion of polycrystal silicon ingot for not completing multiple zone-refine is cut away, is melted down, and it is remaining most
The polycrystal silicon ingot 3 of the electromagnetic confinement smelting device above section of upside is the polycrystal silicon ingot 3 after purification.
The preparation system and the preparation of the polycrystal silicon ingot of preparation method and purifying plant pass through the conjunction of metallurgy method melting silicon first
Golden melt, and silicon is grown from silicon alloy melt by cooling, complete the first time purification of polycrystal silicon ingot；It is more what is lifted out
Symmetrical even number electromagnetic confinement smelting device is set around crystal silicon ingot, and the zone refining generated by the electromagnetic confinement smelting device is molten
Pond carries out fusing heating to polycrystal silicon ingot, and the polysilicon melted in zone refining molten bath is as region is left in the lifting of polycrystal silicon ingot
Melting solidifies behind molten bath, and during polysilicon solidification, the impurity in polysilicon will be segregated, and the part of solidification is by impurity
It is discharged in not solidified melt, the purification of solidification material is realized, because being provided with multiple electromagnetic confinement smelting devices, each electromagnetism
Constraint smelting device can all generate corresponding zone refining molten bath, and zone refining molten bath respectively purifies polycrystal silicon ingot, thus,
The purity of the polycrystal silicon ingot of preparation is further improved, so that the purity of the polysilicon chip of preparation is higher, and then is improved
The photoelectric conversion efficiency of solar battery.
Claims (6)
1. a kind of preparation method of polycrystalline silicon used for solar battery piece, it is characterised in that include the following steps:
By polycrystal silicon ingot preparation and purifying plant (22) preparation and purifying polycrystalline silicon ingot, the polycrystal silicon ingot is taken out by the
One transmission device (26) sends polycrystal silicon ingot cutter device (23) to and is handled；
Polycrystal silicon ingot cutter device (23) cuts the polycrystal silicon ingot, is cut into thickness and meets the polysilicon chip needed,
Then the polysilicon chip is sent to silicon wafer cutting means (24) by second conveyer (27) to handle；
Silicon wafer cutting means (24) carry out the polysilicon chip to cut processing, and the shape of the polysilicon chip after cutting is made to meet need
It asks, then sends the polysilicon chip after cutting to polysilicon fluff making device (26) by third transmission device (28) and carry out making herbs into wool
Processing makes the surface of the polysilicon chip form flannelette；
Polysilicon chip after formation flannelette is cleaned and dried respectively using cleaning equipment (29) and drying equipment (30)
Polycrystalline silicon used for solar battery piece is obtained after processing.
2. the preparation method of polycrystalline silicon used for solar battery piece as described in claim 1, which is characterized in that pass through polycrystal silicon ingot
The method of preparation and purifying plant (22) preparation and purifying polycrystalline silicon ingot is as follows:
Silico-aluminum, silicon copper or Antaciron are prepared, and the silico-aluminum, silicon copper or Antaciron are placed in
In the crucible (18) of furnace body, the crucible (18) is located in crucible supporting (17), and the bottom of crucible supporting (17) is provided with crucible
The lower end of bar (20), the crucible pole (20) is located at furnace body (21) outside, is rotated by controlling the crucible pole of the furnace body (21) outside
Driving device drives crucible (18) rotation；Having heaters (16) are arranged in the outside of crucible supporting (17), then pass through heating
Device (16) carries out heating melting silicon alloy to the silicon alloy in crucible (18), until fusing is uniform；
It is provided with seed rod (1) at the top of the furnace body (21), one end of the seed rod (1) is located in furnace body, seed rod (1)
It is provided with seed crystal (1) positioned at the intracorporal one end of furnace, the other end of seed rod (1) is located at furnace body (21) outside, is located at furnace body (21) outside
Seed rod (1) on be provided with seed rod lifting and rotation drive device, utilize seed rod lifting and rotation drive device driving
Seed rod (1) is fallen in the melt of seed crystal (2) to the crucible (18), and the power of heater (16) is reduced, until silicon is closed from silicon
It grows, is formed polycrystal silicon ingot (3) in golden melt (19), then lift seed rod (1)；
Even number electromagnetic confinement smelting device is provided with above the crucible (18), the electromagnetic confinement smelting device is for generating area
Domain melting molten bath carries out electromagnetic confinement while carrying out fusing heating to polycrystal silicon ingot by zone refining molten bath, described
Electromagnetic confinement smelting device is arranged from top to bottom, and the adjacent smelting device or so is arranged in a staggered manner, a upper electromagnetic confinement
The height of smelting device be higher than adjacent downside electromagnetic confinement smelting device height, respectively electromagnetic confinement smelting device a(14), electricity
Magnetic confinement smelting device b(12), electromagnetic confinement smelting device c(10), electromagnetic confinement smelting device d(8), and so on to the last upside
Even number electromagnetic confinement smelting device, the seed rod is located in the lateral direction between electromagnetic confinement smelting device；Work as lifting
The shoulder of polycrystal silicon ingot (3) be more than electromagnetic confinement smelting device b(12) top when, while starting electromagnetic confinement smelting device a
(14) and electromagnetic confinement smelting device b(12), during polycrystal silicon ingot (3) lift, visited by the position of electromagnetic confinement smelting device
Device (8-3) is surveyed to control electromagnetic confinement smelting device a(14) and electromagnetic confinement smelting device b(12) at a distance from polycrystal silicon ingot (3)；It is logical
Cross caliper detector a(15) control electromagnetic confinement smelting device a(14) produced by zone refining molten bath a(7) depth；Pass through thickness
Detector b(12) control electromagnetic confinement smelting device b(13) produced by zone refining molten bath b(6) depth；
With polycrystal silicon ingot (3) lift progress, when the shoulder of polycrystal silicon ingot (3) is more than electromagnetic confinement smelting device d(8) top
When, while starting electromagnetic confinement smelting device d(8) and electromagnetic confinement smelting device c(10), during polycrystal silicon ingot (3) lift, lead to
The position sensor (8-3) of corresponding electromagnetic confinement smelting device is crossed to control electromagnetic confinement smelting device d(8) and electromagnetic confinement melting
Device c(10) at a distance from polycrystal silicon ingot (3)；Pass through caliper detector d(9) control electromagnetic confinement smelting device d(8) produced by region
Melting molten bath d(4) depth；Pass through caliper detector b(11) and control electromagnetic confinement smelting device c(10) produced by zone refining it is molten
Pond c(5) depth；
And so on, with polycrystal silicon ingot (3) lift progress, when polycrystal silicon ingot (3) shoulder be more than top side electromagnetism about
When the top of beam smelting device, while starting two electromagnetic confinement smelting devices of top side, during polycrystal silicon ingot (3) lift,
Two electromagnetic confinement smelting devices of top side and more are controlled by the position sensor (8-3) of corresponding electromagnetic confinement smelting device
The distance of crystal silicon ingot (3)；And it is controlled by the corresponding caliper detector of two electromagnetic confinement smelting devices with top side most upper
Zone refining pool depth caused by two electromagnetic confinement smelting devices of side；
With the progress of lifting, the zone refining molten bath that electromagnetic confinement smelting device from bottom to top generates is successively to lifting
Polycrystal silicon ingot (3) out carries out zone-refine；
Finally after lifting, polycrystal silicon ingot (3) tail portion for not completing multiple zone-refine is cut away, is melted down, and it is remaining
The polycrystal silicon ingot (3) of the electromagnetic confinement smelting device above section of top side is the polycrystal silicon ingot (3) after purification.
3. the preparation method of polycrystalline silicon used for solar battery piece as claimed in claim 2, it is characterised in that: the electromagnetic confinement
There are four smelting device settings, is from top to bottom electromagnetic confinement smelting device a(14), electromagnetic confinement smelting device b(12), electromagnetic confinement melts
Refine device c(10) and electromagnetic confinement smelting device d(8), wherein the electromagnetic confinement smelting device a(14) and electromagnetic confinement smelting device c
(10) it is located at left side, electromagnetic confinement smelting device b(12) and electromagnetic confinement smelting device d(8) it is located at right side, electromagnetic confinement smelting device a
(14), electromagnetic confinement smelting device b(12), electromagnetic confinement smelting device c(10) and electromagnetic confinement smelting device d(10), for polycrystalline
Melt on silicon ingot (3) in zone refining molten bath generates symmetrical electromagnetic confinement power, keeps polycrystal silicon ingot (3) stress balance, and
It can move up and down and side-to-side movement.
4. the preparation method of polycrystalline silicon used for solar battery piece as claimed in claim 2, it is characterised in that: each electromagnetism
A position sensor (8-3) is provided on the downside of constraint smelting device, the position sensor (8-3) is for incuding the polycrystalline
The diameter of silicon ingot (3), the position of electromagnetic confinement device is adjusted according to diameter change.
5. the preparation method of polycrystalline silicon used for solar battery piece as claimed in claim 2, it is characterised in that: the electromagnetic confinement
Smelting device includes zone refining coil (8-1), coil insulating supporting (8-4) and electromagnetic confinement smelting device moving lever (8-2), institute
It states zone refining coil (8-1) to be supported and be dielectrically separated from by the coil insulating supporting (8-3), the moving lever
It is horizontally disposed, and one end of the moving lever is located in the furnace body (21), the other end of the moving lever is located at the furnace body
(21) outside, the one end for being located at the moving lever in the furnace body (21) is fixedly connected with the coil insulating supporting (8-4).
6. the preparation method of polycrystalline silicon used for solar battery piece as claimed in claim 5, it is characterised in that: the coil insulation
The tubular structure of the opening that up and down direction extension is generally provided on its side wall of support (8-4), the insulating supporting
The central angle of cross sectionGreater than 180 ° and less than 225 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810991756.5A CN109056063A (en) | 2018-08-29 | 2018-08-29 | The preparation method of polycrystalline silicon used for solar battery piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810991756.5A CN109056063A (en) | 2018-08-29 | 2018-08-29 | The preparation method of polycrystalline silicon used for solar battery piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109056063A true CN109056063A (en) | 2018-12-21 |
Family
ID=64757575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810991756.5A Withdrawn CN109056063A (en) | 2018-08-29 | 2018-08-29 | The preparation method of polycrystalline silicon used for solar battery piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109056063A (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10287488A (en) * | 1997-04-07 | 1998-10-27 | Sumitomo Sitix Corp | Pulling up of single crystal |
| CN1267751A (en) * | 2000-03-30 | 2000-09-27 | 天津市半导体材料厂 | Vertical pulling and zone melting process of producing monocrystalline silicon |
| US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
| CN101194051A (en) * | 2005-06-10 | 2008-06-04 | 埃尔凯姆太阳能公司 | Method and apparatus for refining a molten material |
| CN101240444A (en) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | Method and device for manufacturing silica semiconductor wafer |
| CN102275929A (en) * | 2010-06-10 | 2011-12-14 | 上海华巨硅材料有限公司 | Method for improving purity of metallurgical silicon and apparatus for realizing method |
| CN102351184A (en) * | 2011-07-18 | 2012-02-15 | 矽明科技股份有限公司 | Method for recovering silicon carbide, high-purity silicon and dispersion liquid from silicon material linear cutting waste mortar |
| CN102947025A (en) * | 2010-04-13 | 2013-02-27 | 施米德硅晶片科技有限责任公司 | Production of monocrystalline semiconductor materials |
| CN106400122A (en) * | 2016-10-28 | 2017-02-15 | 杭州太能硅业有限公司 | Texturing pretreatment method and texturing method of diamond wire cut polycrystalline silicon sheet |
| CN107159896A (en) * | 2017-04-17 | 2017-09-15 | 上海交通大学 | The method for preparing single crystal blade based on the double induced orientation recrystallizations in extra-fine nickel powder region |
| CN107287435A (en) * | 2017-05-31 | 2017-10-24 | 清华大学 | Using the method for smelting in suspension purifying substances |
| CN107488873A (en) * | 2017-09-19 | 2017-12-19 | 晶科能源有限公司 | A kind of method of silicon ingot casting |
| CN108301043A (en) * | 2018-04-03 | 2018-07-20 | 湖州五石科技有限公司 | A kind of preparation method of polysilicon chip |
-
2018
- 2018-08-29 CN CN201810991756.5A patent/CN109056063A/en not_active Withdrawn
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10287488A (en) * | 1997-04-07 | 1998-10-27 | Sumitomo Sitix Corp | Pulling up of single crystal |
| CN1267751A (en) * | 2000-03-30 | 2000-09-27 | 天津市半导体材料厂 | Vertical pulling and zone melting process of producing monocrystalline silicon |
| US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
| CN101194051A (en) * | 2005-06-10 | 2008-06-04 | 埃尔凯姆太阳能公司 | Method and apparatus for refining a molten material |
| CN101240444A (en) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | Method and device for manufacturing silica semiconductor wafer |
| CN102947025A (en) * | 2010-04-13 | 2013-02-27 | 施米德硅晶片科技有限责任公司 | Production of monocrystalline semiconductor materials |
| CN102275929A (en) * | 2010-06-10 | 2011-12-14 | 上海华巨硅材料有限公司 | Method for improving purity of metallurgical silicon and apparatus for realizing method |
| CN102351184A (en) * | 2011-07-18 | 2012-02-15 | 矽明科技股份有限公司 | Method for recovering silicon carbide, high-purity silicon and dispersion liquid from silicon material linear cutting waste mortar |
| CN106400122A (en) * | 2016-10-28 | 2017-02-15 | 杭州太能硅业有限公司 | Texturing pretreatment method and texturing method of diamond wire cut polycrystalline silicon sheet |
| CN107159896A (en) * | 2017-04-17 | 2017-09-15 | 上海交通大学 | The method for preparing single crystal blade based on the double induced orientation recrystallizations in extra-fine nickel powder region |
| CN107287435A (en) * | 2017-05-31 | 2017-10-24 | 清华大学 | Using the method for smelting in suspension purifying substances |
| CN107488873A (en) * | 2017-09-19 | 2017-12-19 | 晶科能源有限公司 | A kind of method of silicon ingot casting |
| CN108301043A (en) * | 2018-04-03 | 2018-07-20 | 湖州五石科技有限公司 | A kind of preparation method of polysilicon chip |
Non-Patent Citations (2)
| Title |
|---|
| N.L.帕尔 著，朱华昌等译: "《区域提纯及有关技术》", 31 July 1963 * |
| 徐瑞: "《合金定向凝固》", 28 February 2009 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101864594A (en) | Ingot casting method for quasi-monocrystalline silicon | |
| TWI379020B (en) | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystaline cast silicon bodies for photovoltaics | |
| CN108546987B (en) | The method of purifying solar energy level polysilicon | |
| ES2432573T3 (en) | Purification procedure of metallurgical silicon by directed solidification | |
| TW201012978A (en) | Apparatus and method of use for a casting system with independent melting and solidification | |
| US20080178793A1 (en) | Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock | |
| CN108842179A (en) | A method of setting 3 twin boundary of Σ prepares twin crystal to polycrystalline silicon ingot casting | |
| CN102296354A (en) | Ingot casting method for silicon material | |
| CN103572363B (en) | Apparatus and method for producing ingot | |
| CN109097827A (en) | A kind of twin crystal is to polycrystalline silicon ingot casting and preparation method thereof | |
| CN109574016A (en) | The directional solidification purifying plant and method of purification of metalluragical silicon | |
| TW201033412A (en) | Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt | |
| CN101798705A (en) | Method and device for continuous crystal-pulling purification of polysilicon from low-temperature melt | |
| CN104372407B (en) | A kind of crystalline silicon directional solidification growth equipment and method | |
| CN102191542A (en) | Equipment and method for preparing high-purity directionally crystallized polysilicon | |
| CN109911902B (en) | Silicon purification device and method | |
| CN106087041B (en) | A kind of method that ingot casting removes polycrystalline silicon impurities in the process | |
| CN109056063A (en) | The preparation method of polycrystalline silicon used for solar battery piece | |
| CN201495107U (en) | Polycrystal furnace with high-quality purification polysilicon | |
| CN109112622A (en) | The preparation system of polycrystalline silicon used for solar battery piece | |
| CN102732943A (en) | Method for producing monocrystalline silicon cast ingot | |
| CN108588830B (en) | The device of purifying solar energy level polysilicon | |
| CN102877125A (en) | Polycrystal ingot furnace and method for growing mono-like silicon ingot by using the polycrystal ingot furnace | |
| CN108823638A (en) | The preparation method of large scale silicon ingot used for solar batteries | |
| CN106119952A (en) | A kind of single crystal growing furnace secondary charging method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181221 |