CN109056060A - The overflow isolating device of photovoltaic polysilicon ingot furnace - Google Patents
The overflow isolating device of photovoltaic polysilicon ingot furnace Download PDFInfo
- Publication number
- CN109056060A CN109056060A CN201811039639.5A CN201811039639A CN109056060A CN 109056060 A CN109056060 A CN 109056060A CN 201811039639 A CN201811039639 A CN 201811039639A CN 109056060 A CN109056060 A CN 109056060A
- Authority
- CN
- China
- Prior art keywords
- overflow
- barrel
- base frame
- outer barrel
- inner base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The present invention relates to a kind of overflow isolating devices of photovoltaic polysilicon ingot furnace, including polycrystalline silicon ingot or purifying furnace lower furnace body outer wall and polycrystalline silicon ingot or purifying furnace lower furnace body inner wall, the bottom of polycrystalline silicon ingot or purifying furnace lower furnace body is provided with the barrel-shaped seat of the installation of TC, the top of the barrel-shaped seat of the installation of TC is arranged in polycrystalline silicon ingot or purifying furnace lower furnace body, stainless steel cylindrical tube is socketed on the top of the barrel-shaped seat of the installation of TC, inverted umbrella overflow silk floss supporting frame is socketed on stainless steel cylindrical tube, the barrel-shaped seat of the installation of TC is made of outer barrel and inner base frame, the inner base frame is mounted in lower furnace body by outer barrel, the top of the inner base frame is connected in outer barrel by the first spring, first spring is flexibly connected with inner base frame, position-limit mechanism is additionally provided between the outer barrel and inner base frame.The design has the advantages that structure is simple, easily fabricated and practical and efficient.
Description
Technical field
The present invention relates to the overflowing protective structures in a kind of photovoltaic polysilicon ingot furnace, in particular to a kind of to work as liquid silicon material
The overflow isolating device that can be isolated by effective and safe after being overflowed in polycrystalline silicon ingot or purifying furnace in crucible, to prevent liquid-state silicon from contacting
Behind metal furnace wall, explosion accident occurs for ingot furnace.
Background technique
Currently, polycrystalline silicon ingot casting is produced using ceramic silica crucible, silicon material is first put into ceramic quartzy earthenware
In crucible, then ceramic silica crucible is put into polycrystalline silicon ingot or purifying furnace, melting silicon materials are made by heating.Knocking in carrying and charging
It touches, the inside of ceramic silica crucible can be made to generate hidden slight crack, these hidden slight cracks are not found usually.In polycrystalline silicon ingot casting mistake
Cheng Zhong, ceramic silica crucible have contained high-temperature liquid state silicon material, if the inside of silica crucible there are when hidden slight crack, the high temperature of fusing
Liquid silicon material will flow out ceramic silica crucible from hidden slight crack, can quickly since liquid silicon material has preferable mobility
Flow to ingot casting bottom of furnace body.Since ingot casting furnace body is double layer jacket structure, cooling water is connected in collet, and bottom of furnace body is deposited
In weld seam interface, after the high-temperature liquid state silicon material of overflow is contacted with the furnace wall of low temperature, bottom of furnace body weld seam joint broken will lead to, press from both sides
Cooling water in set will flow into ingot furnace body, and the cooling water of inflow makes furnace pressure wink by the silicon liquid instant vaporization of high temperature
Between huge increasing, cause ingot furnace to explode.Further, since a workshop is often equipped with tens ingot furnaces, when there is ingot furnace
When problem, in order to guarantee safety, all ingot furnaces of regulatory requirements have to enter into pole cold state, will cause great economic loss.
Summary of the invention
The present invention provides a kind of overflow isolating device of photovoltaic polysilicon ingot furnace, solve high in polycrystalline silicon ingot or purifying furnace
Safe and effective the technical issues of being isolated of warm overflow liquid silicon material and ingot furnace furnace bottom.
In order to solve the above technical problems, the present invention provides a kind of overflow isolating device of photovoltaic polysilicon ingot furnace,
Including polycrystalline silicon ingot or purifying furnace lower furnace body outer wall and polycrystalline silicon ingot or purifying furnace lower furnace body inner wall, in the bottom of polycrystalline silicon ingot or purifying furnace lower furnace body
It is provided with the barrel-shaped seat of the installation of TC, the top of the barrel-shaped seat of the installation of TC is arranged in polycrystalline silicon ingot or purifying furnace lower furnace body,
It is socketed with stainless steel cylindrical tube on the top of the barrel-shaped seat of the installation of TC, inverted umbrella is socketed on stainless steel cylindrical tube
Shape overflow silk floss supporting frame；The barrel-shaped seat of the installation of TC is made of outer barrel and inner base frame, and the inner base frame passes through
Outer barrel is mounted in lower furnace body, and the top of the inner base frame is connected in outer barrel by the first spring, first spring
It is flexibly connected with inner base frame, is additionally provided with position-limit mechanism between the outer barrel and inner base frame.
Further, the position-limit mechanism includes the groove being arranged on inner base frame outer wall, clamp, second spring and extruding end
Head offers guide groove on the side wall of the outer barrel, and the guide groove faces groove, and the clamp passes through second spring and connects
It connects in groove, the clamp protrudes into guide groove under the action of second spring, and the extrusion end stretches to guide groove simultaneously
It is in contact with clamp.
Further, it is provided with limit base on the outer wall of the outer barrel, is arranged on the outer wall for squeezing out end limited
Position end.
Further, it is provided with annular groove in the round umbrella body of the umbrella overflow silk floss supporting frame, in annular groove
In be plugged with first layer ring-type overflow cotton pad, first layer ring-type overflow cotton pad is paved in polycrystalline silicon ingot or purifying furnace lower furnace body inner wall
On medial surface, it is disposed with the second annular groove from bottom to top in the round umbrella body above first layer ring-type overflow cotton pad
With third annular groove, it is plugged with second layer ring-type overflow cotton pad in the second annular groove, is patched in third annular groove
There is third layer ring-type overflow cotton pad, is provided with the 4th on side in the circular parachute body of inverted umbrella overflow silk floss supporting frame
The cyclic annular overflow cotton pad of layer.
Further, adjustable plate is also connected in the outer barrel, the adjustable plate passes through the first spring and inner seat
Body is connected, and threaded hole is offered on the outer barrel, and adjusting bolt is connected in the threaded hole, and the adjusting bolt passes through spiral shell
Pit stretches in outer barrel, and adjusting bolt stretches to the intracorporal one end of outer cylinder and is flexibly connected with adjustable plate.
After adopting the above structure, the present invention is by passing through inverted umbrella overflow to polycrystalline silicon casting ingot process process analysis procedure analysis
Cotton supporting frame structure is staggeredly superimposed in furnace bottom and is laid with isolation spillwag chute bed course, realize the high-temperature liquid state silicon material of overflow with it is low
Temperature furnace wall it is completely isolated, ensure that the safety of polycrystalline silicon ingot casting production process.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is the enlarged drawing of A in Fig. 1.
Fig. 3 is the enlarged drawing of B in Fig. 1.
Specific embodiment
A kind of overflow isolating device of photovoltaic polysilicon ingot furnace shown in as shown in figures 1 and 3, including polycrystalline silicon ingot casting
Furnace lower furnace body outer wall 1 and polycrystalline silicon ingot or purifying furnace lower furnace body inner wall 2 are provided with thermocouple in the bottom of polycrystalline silicon ingot or purifying furnace lower furnace body
Barrel-shaped seat is installed, the top of the barrel-shaped seat of the installation of TC is arranged in polycrystalline silicon ingot or purifying furnace lower furnace body, in the installation of TC
The top of barrel-shaped seat is socketed with stainless steel cylindrical tube 4, and inverted umbrella overflow silk floss branch is socketed on stainless steel cylindrical tube
Support body 3, the barrel-shaped seat of the installation of TC are made of outer barrel 10 and inner base frame 9, and the inner base frame 9 passes through outer barrel
10 are mounted in lower furnace body, and the top of the inner base frame 9 is connected in outer barrel 10 by the first spring 13, first spring
13 are flexibly connected with inner base frame 9, are additionally provided with position-limit mechanism between the outer barrel 10 and inner base frame 9；The umbrella overflow is continuous
It is provided with annular groove in the round umbrella body of supporting frame 3, first layer ring-type overflow cotton pad 8 is plugged in annular groove, the
One layer of cyclic annular overflow cotton pad 8 is paved on the medial surface of polycrystalline silicon ingot or purifying furnace lower furnace body inner wall 2, in first layer ring-type overflow
It is disposed with the second annular groove and third annular groove from bottom to top in the round umbrella body of 8 top of cotton pad, in the second annulus
It is plugged with second layer ring-type overflow cotton pad 7 in shape slot, third layer ring-type overflow cotton pad 6 is plugged in third annular groove,
The 4th layer of cyclic annular overflow cotton pad 5 is provided in the circular parachute body of inverted umbrella overflow silk floss supporting frame 3 on side.
The present invention is by polycrystalline silicon casting ingot process process analysis procedure analysis, by inverted umbrella overflow cotton supporting frame structure,
Staggeredly be superimposed in furnace bottom and be laid with isolation spillwag chute bed course, realize the high-temperature liquid state silicon material of overflow and the furnace wall of low temperature it is complete every
From ensure that the safety of polycrystalline silicon ingot casting production process.
Position-limit mechanism as shown in Figure 3 includes the groove 14 being arranged on 9 outer wall of inner base frame, clamp 16, second spring 15
With squeeze out end 17, offer guide groove on the side wall of the outer barrel 10, the guide groove faces groove 14, the clamp
16 are connected in groove 14 by second spring 15, and the clamp 16 protrudes into guide groove under the action of second spring 15, institute
Extrusion end 17 is stated to stretch to guide groove and be in contact with clamp 16.
It is provided with limit base 19 on the outer wall of outer barrel 10 as shown in Figure 3, is arranged on the outer wall for squeezing out end 17
There is limit end 18.
Adjustable plate 12 is also connected in outer barrel 10 as shown in Figure 2, the adjustable plate 12 passes through the first spring 13
It is connected with inner base frame 9, threaded hole is offered on the outer barrel 10, is connected in the threaded hole and adjusts bolt 11, the tune
Section bolt 11 passes through threaded hole and stretches in outer barrel 10, adjusts bolt 11 and stretches to one end in outer barrel 10 and adjustable plate 12
It is flexibly connected.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all at this
Under the inventive concept of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/use indirectly
It is included in other related technical areas in scope of patent protection of the invention.
Claims (5)
1. a kind of overflow isolating device of photovoltaic polysilicon ingot furnace, including polycrystalline silicon ingot or purifying furnace lower furnace body outer wall and polysilicon casting
Ingot furnace lower furnace body inner wall is provided with the barrel-shaped seat of the installation of TC, the installation of TC bucket in the bottom of polycrystalline silicon ingot or purifying furnace lower furnace body
The top of shape seat is arranged in polycrystalline silicon ingot or purifying furnace lower furnace body, is socketed with stainless steel on the top of the barrel-shaped seat of the installation of TC
Cylindrical tube is socketed with inverted umbrella overflow silk floss supporting frame on stainless steel cylindrical tube, it is characterised in that:
The barrel-shaped seat of the installation of TC is made of outer barrel and inner base frame, and the inner base frame is mounted on lower furnace by outer barrel
In vivo, the top of the inner base frame is connected in outer barrel by the first spring, and first spring is flexibly connected with inner base frame,
Position-limit mechanism is additionally provided between the outer barrel and inner base frame.
2. overflow isolating device according to claim 1, it is characterised in that: the position-limit mechanism includes being arranged in inner base frame
Groove, clamp, second spring on outer wall and end is squeezed out, offers guide groove, the guiding on the side wall of the outer barrel
Slot faces groove, and the clamp is connected in groove by second spring, and the clamp protrudes under the action of second spring
In guide groove, the extrusion end stretches to guide groove and is in contact with clamp.
3. overflow isolating device according to claim 2, it is characterised in that: be provided with limit on the outer wall of the outer barrel
, limit end is provided on the outer wall for squeezing out end.
4. overflow isolating device according to claim 1, it is characterised in that: the circle of the umbrella overflow silk floss supporting frame
It is provided with annular groove in umbrella body, first layer ring-type overflow cotton pad, first layer ring-type overflow cotton pad are plugged in annular groove
It is to be paved on the medial surface of polycrystalline silicon ingot or purifying furnace lower furnace body inner wall, the round umbrella body above first layer ring-type overflow cotton pad
On be disposed with the second annular groove and third annular groove from bottom to top, be plugged with the second layer in the second annular groove
Cyclic annular overflow cotton pad is plugged with third layer ring-type overflow cotton pad in third annular groove, supports in inverted umbrella overflow silk floss
The 4th layer of cyclic annular overflow cotton pad is provided in the circular parachute body of frame body on side.
5. overflow isolating device according to claim 1, it is characterised in that: be also connected with adjusting in the outer barrel
Plate, the adjustable plate are connected with inner base frame by the first spring, threaded hole are offered on the outer barrel, is connected in the threaded hole
It is connected to adjusting bolt, the adjusting bolt passes through threaded hole and stretches in outer barrel, adjusts bolt and stretches to outer cylinder intracorporal one
End is flexibly connected with adjustable plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811039639.5A CN109056060A (en) | 2018-09-06 | 2018-09-06 | The overflow isolating device of photovoltaic polysilicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811039639.5A CN109056060A (en) | 2018-09-06 | 2018-09-06 | The overflow isolating device of photovoltaic polysilicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109056060A true CN109056060A (en) | 2018-12-21 |
Family
ID=64760624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811039639.5A Withdrawn CN109056060A (en) | 2018-09-06 | 2018-09-06 | The overflow isolating device of photovoltaic polysilicon ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109056060A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008133606A1 (en) * | 2007-04-27 | 2008-11-06 | Pillar Jsc | Apparatus for the production of silicon from melt with indication of melt spill and melt-spill alarm system |
| CN103866384A (en) * | 2014-03-23 | 2014-06-18 | 山西中电科新能源技术有限公司 | Polycrystalline silicon ingot furnace with overflow protection function |
| CN106012004A (en) * | 2016-06-20 | 2016-10-12 | 山西中电科新能源技术有限公司 | Overflowing isolation device for polysilicon ingot furnace |
| CN108092605A (en) * | 2017-12-31 | 2018-05-29 | 正信光电科技股份有限公司 | A kind of photovoltaic module fixture |
-
2018
- 2018-09-06 CN CN201811039639.5A patent/CN109056060A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008133606A1 (en) * | 2007-04-27 | 2008-11-06 | Pillar Jsc | Apparatus for the production of silicon from melt with indication of melt spill and melt-spill alarm system |
| CN103866384A (en) * | 2014-03-23 | 2014-06-18 | 山西中电科新能源技术有限公司 | Polycrystalline silicon ingot furnace with overflow protection function |
| CN106012004A (en) * | 2016-06-20 | 2016-10-12 | 山西中电科新能源技术有限公司 | Overflowing isolation device for polysilicon ingot furnace |
| CN108092605A (en) * | 2017-12-31 | 2018-05-29 | 正信光电科技股份有限公司 | A kind of photovoltaic module fixture |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106012004B (en) | A kind of overflow isolating device of polycrystalline silicon ingot or purifying furnace | |
| CN202717879U (en) | Novel polysilicon ingot casting furnace overflow protection device | |
| CN104550805A (en) | Device and method for preparing magnesium alloy ingot blank for deformation | |
| CN203159743U (en) | Improved overflow protection device for polycrystal ingot furnace | |
| CN204111919U (en) | A kind of polycrystalline ingot furnace | |
| CN109056060A (en) | The overflow isolating device of photovoltaic polysilicon ingot furnace | |
| CN205774925U (en) | A kind of overflow isolating device of polycrystalline silicon ingot or purifying furnace | |
| CN203668551U (en) | Novel polycrystalline silicon ingoting device | |
| CN106917138A (en) | For the polycrystalline cast ingot furnace body of oversize silicon ingot | |
| CN203683722U (en) | Polycrystalline ingot furnace with overflow protecting function | |
| CN206553654U (en) | The overflow safeguard structure of polycrystalline silicon ingot or purifying furnace after a kind of upgrading | |
| CN108686583A (en) | diamond press | |
| CN205874478U (en) | High heat conduction air brick | |
| CN207512306U (en) | A kind of feeding device for single crystal furnace for having movable protective sleeve | |
| CN109940056B (en) | High-efficient multi-functional self-heating equal channel extrusion device | |
| CN209835948U (en) | Electrode water jacket capable of being continuously jacked | |
| CN207016891U (en) | A kind of cooling device of polycrystalline ingot furnace for oversize silicon ingot | |
| CN208526556U (en) | Diamond press | |
| CN207386506U (en) | A kind of bismuth ingot automatic casting equipment | |
| CN203513827U (en) | Heat shield device for single silicon crystal growth | |
| CN212463529U (en) | Bottom thickening high temperature resistant protection tube structure | |
| CN203999910U (en) | Explosion-proof polycrystalline silicon ingot or purifying furnace | |
| CN205893365U (en) | A test device for skin river method magnesium production | |
| CN201132204Y (en) | Furnace body protecting equipment for polycrystalline silicon ingot furnace | |
| CN105400934A (en) | Vertical type hardening furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181221 |