CN109056038A - Electroplanting device and its electro-plating method - Google Patents
Electroplanting device and its electro-plating method Download PDFInfo
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- CN109056038A CN109056038A CN201811178509.XA CN201811178509A CN109056038A CN 109056038 A CN109056038 A CN 109056038A CN 201811178509 A CN201811178509 A CN 201811178509A CN 109056038 A CN109056038 A CN 109056038A
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- 238000009713 electroplating Methods 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims description 76
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- -1 hydrogen ions Chemical class 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 125000002091 cationic group Chemical group 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 64
- 239000002184 metal Substances 0.000 abstract description 64
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 description 32
- 230000008021 deposition Effects 0.000 description 31
- 229910021645 metal ion Inorganic materials 0.000 description 15
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 150000001768 cations Chemical class 0.000 description 7
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 6
- 229910001431 copper ion Inorganic materials 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000367 silver sulfate Inorganic materials 0.000 description 1
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A kind of electroplanting device and its electro-plating method of wafer, the electroplanting device includes: electroplating container, and the electroplating container is for accommodating electroplate liquid；Wafer susceptor, the wafer susceptor are set in the electroplating container, and the wafer susceptor immerses the electroplate liquid for fixing wafer, the surface of fixed wafer；Anode electrode, the anode electrode are located at the electroplating container and immerse in the electroplate liquid；Dispatch from foreign news agency source component, the dispatch from foreign news agency source component is located at outside the electroplating container, and the first pole of the dispatch from foreign news agency source component is electrically connected with the anode electrode, and the second pole of the dispatch from foreign news agency source component is electrically connected with the wafer susceptor.The electroplating quality of metal layer can be improved in the present invention program, and then improves the quality of semiconductor devices.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an electroplating device and an electroplating method thereof.
Background
In a semiconductor manufacturing process, a metal line in a metal layer (also called a metal film) is formed by electrically connecting to a wafer through a conductive wire and depositing metal into a trench patterned on the wafer by using an electroplating process, such as forming a copper metal line (also called a copper metal wire) or a silver metal line (also called a silver metal wire).
An existing plating apparatus may include a plating vessel for containing a plating solution, a wafer susceptor to which a negative electrode of an external power supply is connected and on which a wafer is placed, and an anode electrode connected to a positive electrode of the external power supply. Specifically, an external power source is used to apply a voltage to the anode electrode, and the anode electrode undergoes an oxidation reaction to form metal ions (such as copper ions, silver ions, and the like), which are reduced to metal atoms on the surface of the wafer and deposited to form a metal layer.
As the size of semiconductor devices is getting smaller, holes are easily formed in the process of forming a metal film by electroplating, and particularly, when a metal film is formed under the topography of a via hole or a trench, holes are more easily formed at the bottom of the via hole or the trench.
Disclosure of Invention
The invention aims to provide an electroplating device and an electroplating method thereof, which can improve the electroplating quality of a metal layer and further improve the quality of a semiconductor device.
In order to solve the above technical problem, an embodiment of the present invention provides an electroplating apparatus, including: a plating container for containing a plating liquid; the wafer base is arranged in the electroplating container and used for fixing a wafer, and the surface of the fixed wafer is immersed in the electroplating solution; an anode electrode positioned in the plating vessel and immersed in the plating solution; the outer power assembly is positioned outside the electroplating container, a first pole of the outer power assembly is electrically connected with the anode electrode, and a second pole of the outer power assembly is electrically connected with the wafer base; wherein the external power supply assembly provides a pulsed current alternating positive and negative between the first and second poles, and wherein a greater amount of charge flows to the wafer than from the wafer during electroplating, wherein positive refers to a direction from the anode electrode through the plating solution to the wafer.
Optionally, during the electroplating period, the duration of the positive pulse current is equal to the duration of the negative pulse current, and the positive pulse current is greater than the negative pulse current; or, during the electroplating period, the positive pulse current duration is greater than the negative pulse current duration, and the positive pulse current intensity is equal to the negative pulse current intensity.
Optionally, the external power supply assembly includes: the anode of the first external power supply is electrically connected with the anode electrode, and the cathode of the first external power supply is electrically connected with the wafer base; the anode of the second external power supply is electrically connected with the wafer pedestal, and the cathode of the second external power supply is electrically connected with the anode electrode; and the processor is coupled with the first external power supply and the second external power supply and controls the first external power supply and the second external power supply to supply power in turn according to the positive pulse current duration and the negative pulse current duration.
Optionally, the external power supply assembly is a pulse power supply.
Optionally, the material of the anode electrode includes copper, and the plating solution includes hydrogen ions.
Optionally, the wafer base is disposed on a first side of the electroplating container; the anode electrode is positioned on the second side of the electroplating container; wherein the first side and the second side are oppositely disposed.
Optionally, the electroplating apparatus further includes: a cationic membrane located between the wafer pedestal and the anode electrode.
In order to solve the above technical problem, an embodiment of the present invention provides an electroplating method of the electroplating apparatus, including: arranging a wafer on the wafer base; providing pulse current with positive and negative alternating directions by adopting the external power supply assembly, providing current flowing from the anode electrode to the wafer base in positive pulse time, and providing current flowing from the wafer base to the anode electrode in negative pulse time; the positive pulse current intensity is larger than the negative pulse current intensity, and/or the positive pulse current duration is larger than the negative pulse current duration.
Optionally, during electroplating, the external power supply assembly is controlled such that the intensity of the pulse current gradually increases.
Optionally, during the electroplating, the external power supply assembly is controlled so that the duration of the forward pulse current is gradually increased.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in an embodiment of the present invention, there is provided an electroplating apparatus including: a plating container for containing a plating liquid; the wafer base is arranged in the electroplating container and used for fixing a wafer, and the surface of the fixed wafer is immersed in the electroplating solution; an anode electrode positioned in the plating vessel and immersed in the plating solution; the outer power assembly is positioned outside the electroplating container, a first pole of the outer power assembly is electrically connected with the anode electrode, and a second pole of the outer power assembly is electrically connected with the wafer base; wherein the external power supply assembly provides a pulsed current alternating positive and negative between the first and second poles, and wherein a greater amount of charge flows to the wafer than from the wafer during electroplating, wherein positive refers to a direction from the anode electrode through the plating solution to the wafer. By adopting the scheme, the pulse current with positive and negative alternating directions is provided between the first pole and the second pole through the arrangement of the external power supply assembly, in addition, the charge quantity flowing to the wafer is larger than the charge quantity flowing out of the wafer in the electroplating period, the process of alternating electroplating deposition and electrolytic corrosion can be formed, under the action of the negative pulse current, the metal layer deposited on the surface of the wafer is subjected to oxidation reaction to form metal ions (such as copper ions, silver ions and the like), so that the electrolytic corrosion on the surface of the metal layer is generated, the metal on the surface of the formed hole is corroded to generate an opening, the sealing is avoided when the metal layer is not filled, the electroplating quality of the metal layer is improved, and the quality of a semiconductor device is further improved.
Drawings
FIG. 1 is a schematic structural view of an electroplating apparatus according to the prior art;
FIG. 2 is a schematic structural view of an electroplating apparatus according to an embodiment of the present invention;
FIG. 3 is a graph illustrating a pulse current versus time according to an embodiment of the present invention;
FIG. 4 is a flow chart of an electroplating method of an electroplating apparatus according to an embodiment of the present invention.
Detailed Description
In the prior art, holes are easily formed in the process of forming a metal film by electroplating, and particularly, when the metal film is formed under the appearance of a through hole or a groove, the holes are more easily formed at the bottom of the through hole or the groove.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an electroplating apparatus in the prior art.
The electroplating apparatus may include an electroplating vessel 100, a wafer pedestal 102, an anode electrode 104, and an external power supply assembly 106.
The plating vessel 100 may be used to contain a plating solution.
Specifically, the plating solution may be selected according to the kind of the metal to be plated, for example, when the metal to be plated is copper, the plating solution may include a copper sulfate solution; when the metal to be electroplated is silver, the electroplating solution may comprise a silver sulfate solution.
The wafer pedestal 102 may be disposed on a first side of the plating container 100, and the wafer pedestal 102 is used for fixing a surface of a wafer 108 facing the inside of the plating container 100.
The anode electrode 104 may be located on a second side of the plating vessel 100, the first side and the second side being oppositely disposed.
Specifically, the anode electrode 104 may be selected according to the kind of the metal to be plated, for example, when the metal to be plated is copper, the anode electrode 104 may be a copper electrode; when the metal to be plated is silver, the anode electrode 104 may be a silver electrode.
In an implementation, when a voltage is applied to the anode electrode 104 by the external power assembly 106, the anode electrode 104 undergoes an oxidation reaction to form metal ions (e.g., copper ions, silver ions, etc.), which are reduced to metal atoms and deposited to form a metal layer on the surface of the wafer 108 on the wafer pedestal 102.
The outer power component 106 may be located outside the plating container 100, and the anode of the outer power component 106 is electrically connected to the anode electrode 104, and the cathode of the outer power component 106 is electrically connected to the wafer pedestal 102.
The inventor of the present invention has found, through research, that in the prior art, the metal ions are continuously reduced to metal atoms on the surface of the wafer and deposited to form a metal layer, which is prone to generate holes or air gaps, and particularly when the wafer has features such as through holes or trenches, the metal layer is more prone to be sealed in advance during metal deposition, so that the through holes or trenches cannot be filled with sufficient metal material to form holes, thereby affecting the quality of the semiconductor device.
In an embodiment of the present invention, there is provided an electroplating apparatus including: a plating container for containing a plating liquid; the wafer base is arranged in the electroplating container and used for fixing a wafer, and the surface of the fixed wafer is immersed in the electroplating solution; an anode electrode positioned in the plating vessel and immersed in the plating solution; the outer power assembly is positioned outside the electroplating container, a first pole of the outer power assembly is electrically connected with the anode electrode, and a second pole of the outer power assembly is electrically connected with the wafer base; wherein the external power supply assembly provides a pulsed current alternating positive and negative between the first and second poles, and wherein a greater amount of charge flows to the wafer than from the wafer during electroplating, wherein positive refers to a direction from the anode electrode through the plating solution to the wafer. By adopting the scheme, the pulse current with positive and negative alternating directions is provided between the first pole and the second pole through the arrangement of the external power supply assembly, in addition, the charge quantity flowing to the wafer is larger than the charge quantity flowing out of the wafer in the electroplating period, the process of alternating electroplating deposition and electrolytic corrosion can be formed, under the action of the negative pulse current, the metal layer deposited on the surface of the wafer is subjected to oxidation reaction to form metal ions (such as copper ions, silver ions and the like), so that the electrolytic corrosion on the surface of the metal layer is generated, the metal on the surface of the formed hole is corroded to generate an opening, the sealing is avoided when the metal layer is not filled, the electroplating quality of the metal layer is improved, and the quality of a semiconductor device is further improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 2, fig. 2 is a schematic structural diagram of an electroplating apparatus according to an embodiment of the present invention.
The electroplating apparatus may include an electroplating vessel 200, a wafer pedestal 202, an anode electrode 204, and an external power supply assembly 206.
The plating vessel 200 may be used to contain a plating solution.
The wafer pedestal 202 may be disposed within the plating vessel 200, the wafer pedestal 202 being configured to hold a wafer 208, a surface of the held wafer 208 being immersed in the plating solution.
Further, the wafer pedestal 202 may be disposed on a first side of the plating container 200, and the wafer pedestal 202 may be configured to hold a surface of the wafer 208 facing the inside of the plating container 200, such that the surface of the held wafer 208 is immersed in the plating solution.
In one embodiment, the wafer pedestal 202 may be an electrostatic chuck to which the wafer 208 is secured by electrostatic attraction. Further, the movement of the wafer 208 may also be controlled using a motor or a robotic arm connected to an electrostatic chuck.
It should be noted that the wafer pedestal 202 is movably disposed in the electroplating container 200, and may be moved out of the electroplating container 200 by a motor or a robot arm, for example, in a non-operating state, so as to suck or drop the wafer 208.
The anode electrode 204 may be positioned within the plating vessel 200 and immersed in the plating solution.
Further, the material of the anode electrode 204 includes copper. Specifically, the anode electrode 204 may be selected according to the kind of the metal to be plated, for example, when the metal to be plated is copper, the anode electrode 204 may be a copper electrode; when the metal to be plated is silver, the anode electrode 204 may be a silver electrode; when the metal to be plated is aluminum, the anode electrode 204 may be an aluminum electrode.
Further, the plating solution may contain corresponding metal ions, for example, when the anode electrode 204 is a copper electrode, the plating solution contains copper ions, when the anode electrode 204 is a silver electrode, the plating solution contains silver ions, and when the anode electrode 204 is an aluminum electrode, the plating solution contains aluminum ions.
Further, the plating solution may contain hydrogen ions, such as sulfuric acid (H)2SO4) And/or hydrochloric acid (HCl). In specific implementation, the corrosivity of hydrogen ions to metal can be utilized, and when the embodiment of the invention adopts a negative pulse current mode to corrode a metal layer, an auxiliary effect is provided, so that corrosion is realized more quickly, and the condition that a through hole or a groove is sealed in advance is avoided.
It should be noted that, in the prior art, the electroplating solution may further include an accelerator and a suppressor for preventing the through hole or the trench from being sealed in advance during the electroplating process, but the accelerator and the suppressor correspond to impurities, which causes the impurity content in the metal film to increase, and reduces the purity of the formed metal layer. In the embodiment of the invention, the pulse plating mode is adopted, so that the through hole or the groove can be prevented from being sealed in advance in the plating process, the adding amount of additives such as an accelerator, an inhibitor and the like can be reduced, the side effect of the additives can be reduced, and the purity of the plated metal can be improved.
It should be noted that, in the embodiment of the present invention, the metal layer is corroded by negative pulse current, so that compared with the direct current copper plating technology in the prior art, the use of accelerators and inhibitors can be reduced, thereby reducing the production cost.
Further, the anode electrode 204 may be located on a second side of the plating container 200, the first side and the second side being disposed opposite to each other.
In one non-limiting example, the first side can be located at the top of the plating vessel 200 and the second side can be located at the bottom of the plating vessel 200.
In one implementation, the external power component 206 is located outside the plating container 200, and a first pole of the external power component 206 is electrically connected to the anode electrode 204 and a second pole of the external power component 206 is electrically connected to the wafer pedestal 200.
Wherein the external power supply assembly 206 provides a pulsed current alternating between positive and negative polarity, and wherein the amount of charge flowing to the wafer 208 during plating is greater than the amount of charge flowing from the wafer 208, wherein positive refers to the direction from the anode electrode 204 through the plating solution to the wafer 208.
In one embodiment of the present invention, the external power module 206 may include a first external power source 203, a second external power source 205, and a processor 207.
Wherein the anode of the first external power source 203 can be electrically connected to the anode electrode 204, and the cathode of the first external power source 203 can be electrically connected to the wafer pedestal 200;
the anode of the second external power source 205 may be electrically connected to the wafer pedestal 200, and the cathode of the second external power source 205 may be electrically connected to the anode electrode 204;
the processor may be coupled to the first external power source 203 and the second external power source 205, and control the first external power source 203 and the second external power source 205 to alternately supply power according to a positive pulse current duration and a negative pulse current duration.
In another embodiment of the present invention, the external power component 206 may be a pulse power source, and the external power component alternately supplies power according to a positive pulse current duration and a negative pulse current duration.
In the embodiment of the present invention, the external power source assembly 206 is configured to provide a pulse current with alternating positive and negative directions between the first pole and the second pole, and during the electroplating, the amount of charge flowing to the wafer 208 is greater than the amount of charge flowing out from the wafer 208, so that an alternating process of electroplating deposition and electrolytic corrosion can be formed, and under the action of the negative pulse current, the metal layer deposited on the surface of the wafer 208 undergoes an oxidation reaction to form metal ions (such as copper ions, silver ions, etc.), thereby causing electrolytic corrosion on the surface of the metal layer, facilitating the metal on the surface of the formed hole to be corroded to generate an opening, preventing the opening from being sealed when the hole is not filled, and improving the electroplating quality of the metal layer.
Further, the metal plating apparatus for the wafer may further include a cation membrane 209, and the cation membrane 209 may be located between the wafer pedestal 202 and the anode electrode 204.
In an implementation, the cation membrane 209 functions to block non-cations between the wafer 208 and the cation membrane 209, and prevent the non-cations from moving to one end of the anode electrode 204 and even attaching to the anode electrode 204 to affect the oxidation reaction of the metal ions. The non-cation may be, for example, an additive ion that makes the metal ions more uniform to form a film.
Further, during electroplating, the amount of charge flowing to the wafer 208 is greater than the amount of charge flowing from the wafer 208 by controlling the duration of the positive and negative pulse currents and controlling the magnitude of the positive and negative pulse currents.
Referring to fig. 3, fig. 3 is a diagram illustrating a pulse current-time relationship curve according to an embodiment of the present invention.
As shown in fig. 3, the pulse current is alternately positive and negative, and the charge amount of the positive current is larger than that of the negative current.
Wherein, the positive direction refers to a direction from the anode electrode to the wafer through the plating solution, and thus the positive current refers to a current flowing from the anode electrode to the wafer through the plating solution, and the negative current refers to a current flowing from the wafer.
In a specific implementation manner of the embodiment of the present invention, during the electroplating period, the duration of the positive pulse current and the duration of the negative pulse current may be equal, and the positive pulse current is stronger than the negative pulse current.
In the pulse curve shown in fig. 3, the positive pulse current intensity a2 is greater than the negative pulse current intensity a1 in the plating phase a, the positive pulse current intensity B2 is greater than the negative pulse current intensity B1 in the plating phase B, and the positive pulse current intensity C2 is greater than the negative pulse current intensity C1 in the plating phase C.
Specifically, the positive pulse current is helpful for enabling the anode electrode to generate oxidation reaction to form metal ions, and the metal ions can be reduced to metal atoms on the surface of the wafer and deposited to form a metal layer, so that electroplating deposition on the surface of the metal layer is realized; the negative pulse current is helpful for enabling the metal layer deposited on the surface of the wafer to generate oxidation reaction to form metal ions, thereby realizing electrolytic corrosion on the surface of the metal layer.
In the embodiment of the invention, by setting that the duration of the positive pulse current is equal to the duration of the negative pulse current and the positive pulse current is greater than the negative pulse current during the electroplating period, the electroplating deposition speed of the surface of the metal layer can be greater than the electrolytic corrosion speed, so that the metal layer can be formed more quickly.
In another specific implementation manner of the embodiment of the present invention, during the electroplating period, the duration of the positive pulse current may be greater than the duration of the negative pulse current, and the intensity of the positive pulse current is equal to the intensity of the negative pulse current.
As shown in fig. 3, the pulse curve may be set in the electroplating stage a, where the positive pulse current duration is longer than the negative pulse current duration, may be set in the electroplating stage B, where the positive pulse current duration is longer than the negative pulse current duration, and may be set in the electroplating stage C, where the positive pulse current duration is longer than the negative pulse current duration.
Specifically, the positive pulse current is helpful for enabling the anode electrode to generate oxidation reaction to form metal ions, and the metal ions can be reduced to metal atoms on the surface of the wafer and deposited to form a metal layer, so that electroplating deposition on the surface of the metal layer is realized; the negative pulse current is helpful for enabling the metal layer deposited on the surface of the wafer to generate oxidation reaction to form metal ions, thereby realizing electrolytic corrosion on the surface of the metal layer.
In the embodiment of the invention, by setting that the duration of the positive pulse current is longer than that of the negative pulse current and the intensity of the positive pulse current is equal to that of the negative pulse current in the electroplating period, the duration of electroplating deposition on the surface of the metal layer can be longer than that of electrolytic corrosion, so that the metal layer can be formed more quickly.
It is understood that, in order to realize that the amount of charge flowing to the wafer is larger than the amount of charge flowing out of the wafer, as shown in fig. 3, the pulse current strength in the positive direction is larger than that in the negative direction, and the pulse current duration in the positive direction is longer than that in the negative direction.
Further, during the plating, the intensity of the pulse current may be set to gradually increase.
Specifically, the intensity of the pulse current may be set to increase linearly, and the intensity of the pulse current may also be set to increase stepwise.
As a non-limiting example, the electroplating process may be divided into three stages, and when the electroplating deposition is performed on the surface of the wafer in stage a, the intensity of the pulse current may be set to be small, so that the electroplating deposition speed is slow, and a good deposition effect is formed in the through holes on the surface of the wafer; when the electroplating deposition is carried out on the surface of the wafer in the stage B, the speed of the electroplating deposition is moderate, so that a better deposition effect is formed in the groove on the surface of the wafer; when the electroplating deposition is carried out on the surface of the wafer in the stage C, the electroplating deposition speed is higher, so that the deposition is formed on the plane area of the surface of the wafer faster.
It should be noted that, because there is a wafer surface without through holes or trenches, the three stages may only have one to two stages, and a new electroplating stage may be added due to the addition of other features, without affecting the specific implementation of the present invention.
In the embodiment of the invention, when the wafer surface has various appearances, such as through holes, grooves and plane appearances, the intensity of the pulse current can be gradually increased, the appearance with smaller cross section area is electroplated and deposited at a slower deposition speed, and then the appearance with larger cross section area is electroplated and deposited at a faster deposition speed, so that the balance between the deposition effect and the deposition efficiency is better realized.
Further, during the plating, the external power supply assembly may be controlled such that the duration of the forward pulse current is gradually increased.
Specifically, the duration ratio of the positive pulse current can be used to indicate the proportion of the duration of the positive pulse current to the pulse period, and it is understood that the longer the duration of the positive pulse current is, the shorter the duration of the negative pulse current is in a fixed pulse period.
Specifically, the time length ratio of the pulse current in the forward direction may be set to increase linearly, and the time length ratio of the pulse current in the forward direction may also be set to increase step by step.
As a non-limiting example, the electroplating process may be divided into three stages, and when the electroplating deposition is performed on the surface of the wafer in stage a, the duty ratio of the duration of the forward pulse current may be set to be smaller, so that the electroplating deposition speed is slower, and a better deposition effect is formed in the through hole on the surface of the wafer; when the electroplating deposition is carried out on the surface of the wafer in the stage B, the duty ratio of the duration of the forward pulse current is moderate, so that a better deposition effect is formed in the groove on the surface of the wafer; when the electroplating deposition is carried out on the surface of the wafer in the stage C, the duration of the forward pulse current is larger, so that the deposition is formed on the plane area of the surface of the wafer faster.
It should be noted that, because there is a wafer surface without through holes or trenches, the three stages may only have one to two stages, and a new electroplating stage may be added due to the addition of other features, without affecting the specific implementation of the present invention.
In the embodiment of the invention, when the wafer surface has various appearances, such as through holes, grooves and plane appearances, the balance between the deposition effect and the deposition efficiency can be better realized by setting the time ratio of the forward pulse current to be gradually increased, firstly adopting the shorter time ratio of the forward pulse current to carry out electroplating deposition on the appearance with the smaller cross section area, and then adopting the longer time ratio of the forward pulse current to carry out electroplating deposition on the appearance with the larger cross section area.
Referring to fig. 4, in an embodiment of the present invention, there is also provided a plating method of the plating apparatus shown in fig. 2. The plating method may include steps S41 to S42:
step S41: arranging a wafer on the wafer base;
step S42: and adopting the external power supply assembly to provide pulse current with positive and negative alternating directions, providing current flowing from the anode electrode to the wafer base in positive pulse time, and providing current flowing from the wafer base to the anode electrode in negative pulse time.
The positive pulse current intensity is larger than the negative pulse current intensity, and/or the positive pulse current duration is larger than the negative pulse current duration.
Further, during the plating, the external power supply assembly is controlled so that the intensity of the pulse current is gradually increased.
Further, during the plating, the external power supply assembly is controlled so that the duration of the forward pulse current is gradually increased.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An electroplating apparatus, comprising:
a plating container for containing a plating liquid;
the wafer base is arranged in the electroplating container and used for fixing a wafer, and the surface of the fixed wafer is immersed in the electroplating solution;
an anode electrode positioned in the plating vessel and immersed in the plating solution;
the outer power assembly is positioned outside the electroplating container, a first pole of the outer power assembly is electrically connected with the anode electrode, and a second pole of the outer power assembly is electrically connected with the wafer base;
wherein the external power supply assembly provides a pulsed current alternating positive and negative between the first and second poles, and wherein a greater amount of charge flows to the wafer than from the wafer during electroplating, wherein positive refers to a direction from the anode electrode through the plating solution to the wafer.
2. The plating apparatus as recited in claim 1, wherein during said plating, a duration of the pulse current in a positive direction and a duration of the pulse current in a negative direction are equal and a magnitude of the pulse current in the positive direction is larger than a magnitude of the pulse current in the negative direction;
or,
and during the electroplating period, the positive pulse current duration is greater than the negative pulse current duration, and the positive pulse current intensity is equal to the negative pulse current intensity.
3. The plating apparatus as recited in claim 1, wherein the external power supply assembly comprises:
the anode of the first external power supply is electrically connected with the anode electrode, and the cathode of the first external power supply is electrically connected with the wafer base;
the anode of the second external power supply is electrically connected with the wafer pedestal, and the cathode of the second external power supply is electrically connected with the anode electrode;
and the processor is coupled with the first external power supply and the second external power supply and controls the first external power supply and the second external power supply to supply power in turn according to the positive pulse current duration and the negative pulse current duration.
4. The electroplating apparatus of claim 1, wherein the external power supply assembly is a pulsed power supply.
5. The plating apparatus as recited in claim 1,
the material of the anode electrode comprises copper, and the electroplating solution comprises hydrogen ions.
6. The plating apparatus as recited in claim 1,
the wafer base is arranged on the first side of the electroplating container;
the anode electrode is positioned on the second side of the electroplating container;
wherein the first side and the second side are oppositely disposed.
7. The plating apparatus as recited in claim 1, further comprising:
a cationic membrane located between the wafer pedestal and the anode electrode.
8. An electroplating method of an electroplating apparatus according to any one of claims 1 to 7, comprising:
arranging a wafer on the wafer base;
providing pulse current with positive and negative alternating directions by adopting the external power supply assembly, providing current flowing from the anode electrode to the wafer base in positive pulse time, and providing current flowing from the wafer base to the anode electrode in negative pulse time;
the positive pulse current intensity is larger than the negative pulse current intensity, and/or the positive pulse current duration is larger than the negative pulse current duration.
9. The plating method according to claim 8,
controlling the external power supply assembly so that the intensity of the pulse current is gradually increased during the electroplating.
10. The plating method according to claim 8,
during the electroplating, the external power supply assembly is controlled so that the time length of the forward pulse current is gradually increased.
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| CN201811178509.XA CN109056038A (en) | 2018-10-10 | 2018-10-10 | Electroplanting device and its electro-plating method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112853441A (en) * | 2021-01-08 | 2021-05-28 | 上海戴丰科技有限公司 | Wafer horizontal electroplating device and cathode electroplating solution jet flow method |
| CN114262918A (en) * | 2021-12-02 | 2022-04-01 | 中国电子科技集团公司第十八研究所 | Equipotential device for wafer electroplating, wafer electroplating device and electroplating method |
| WO2023236818A1 (en) * | 2022-06-10 | 2023-12-14 | 佛山市顺德区美的电子科技有限公司 | Electrolysis generation apparatus and control method therefor, and electrical device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1078000A (en) * | 1992-04-21 | 1993-11-03 | 铁道部科学研究院铁道继续教育中心 | The metallic surface periodic reverse pulse electrochemical cleans |
| CN1822322A (en) * | 2004-11-02 | 2006-08-23 | 夏普株式会社 | Micro-hole plating and gold bump fabrication method, semiconductor device and semiconductor device fabrication method |
| CN101711095A (en) * | 2009-04-16 | 2010-05-19 | 深圳市精诚达电路有限公司 | Copper-plating hole-filling process of HDI flexible printed circuit |
| CN103484908A (en) * | 2013-09-29 | 2014-01-01 | 华进半导体封装先导技术研发中心有限公司 | Electrochemical copper deposition method of TSV |
| CN103603018A (en) * | 2013-10-23 | 2014-02-26 | 复旦大学 | Pulse electroplating method and application thereof |
| CN104603334A (en) * | 2012-04-25 | 2015-05-06 | 埃托特克德国有限公司 | Method and apparatus for electrolytically depositing deposition metal on workpiece |
| CN106065488A (en) * | 2016-05-19 | 2016-11-02 | 西安交通大学 | A kind of method utilizing positive negative pulse stuffing anodizing to prepare anode aluminium foil |
| CN106917123A (en) * | 2017-03-31 | 2017-07-04 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer electroplating device and electroplating method |
-
2018
- 2018-10-10 CN CN201811178509.XA patent/CN109056038A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1078000A (en) * | 1992-04-21 | 1993-11-03 | 铁道部科学研究院铁道继续教育中心 | The metallic surface periodic reverse pulse electrochemical cleans |
| CN1822322A (en) * | 2004-11-02 | 2006-08-23 | 夏普株式会社 | Micro-hole plating and gold bump fabrication method, semiconductor device and semiconductor device fabrication method |
| CN101711095A (en) * | 2009-04-16 | 2010-05-19 | 深圳市精诚达电路有限公司 | Copper-plating hole-filling process of HDI flexible printed circuit |
| CN104603334A (en) * | 2012-04-25 | 2015-05-06 | 埃托特克德国有限公司 | Method and apparatus for electrolytically depositing deposition metal on workpiece |
| CN103484908A (en) * | 2013-09-29 | 2014-01-01 | 华进半导体封装先导技术研发中心有限公司 | Electrochemical copper deposition method of TSV |
| CN103603018A (en) * | 2013-10-23 | 2014-02-26 | 复旦大学 | Pulse electroplating method and application thereof |
| CN106065488A (en) * | 2016-05-19 | 2016-11-02 | 西安交通大学 | A kind of method utilizing positive negative pulse stuffing anodizing to prepare anode aluminium foil |
| CN106917123A (en) * | 2017-03-31 | 2017-07-04 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer electroplating device and electroplating method |
Non-Patent Citations (1)
| Title |
|---|
| 格迪斯: "《MEMS材料与工艺手册》", 31 March 2014, 南京：东南大学出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112853441A (en) * | 2021-01-08 | 2021-05-28 | 上海戴丰科技有限公司 | Wafer horizontal electroplating device and cathode electroplating solution jet flow method |
| CN112853441B (en) * | 2021-01-08 | 2022-04-08 | 上海戴丰科技有限公司 | Wafer horizontal electroplating device and cathode electroplating solution jet flow method |
| CN114262918A (en) * | 2021-12-02 | 2022-04-01 | 中国电子科技集团公司第十八研究所 | Equipotential device for wafer electroplating, wafer electroplating device and electroplating method |
| WO2023236818A1 (en) * | 2022-06-10 | 2023-12-14 | 佛山市顺德区美的电子科技有限公司 | Electrolysis generation apparatus and control method therefor, and electrical device |
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